CN104299999B - A kind of gallium nitride radical heterojunction field effect transistor with composite gate dielectric layer - Google Patents
A kind of gallium nitride radical heterojunction field effect transistor with composite gate dielectric layer Download PDFInfo
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- CN104299999B CN104299999B CN201410534795.4A CN201410534795A CN104299999B CN 104299999 B CN104299999 B CN 104299999B CN 201410534795 A CN201410534795 A CN 201410534795A CN 104299999 B CN104299999 B CN 104299999B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 61
- 239000002131 composite material Substances 0.000 title claims abstract description 44
- 230000005669 field effect Effects 0.000 title claims abstract description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 43
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000004767 nitrides Chemical class 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 20
- 230000000694 effects Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- -1 aluminum gallium nitrides Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a kind of gallium nitride radical heterojunction field effect transistor with composite gate dielectric layer, mainly there is substrate successively from bottom to up, nitride buffer layer, gallium nitride channel layer, aluminum gallium nitride barrier layer and composite gate dielectric layer, the source electrode with it into Ohmic contact is formed on barrier layer, drain electrode and the grid into MIS structure, composite gate dielectric layer is made up of the gate dielectric layer of height differing dielectric constant, thus peak electric field is formed at the gate dielectric layer interface of channel layer, the peak value of electron drift velocity at peak electric field be present, make electronics in the overall drift velocity increase of raceway groove, low-k gate dielectric layer reduces gate capacitance simultaneously, lift the frequency characteristic of device.
Description
Technical field
The present invention relates to field of semiconductor devices, and in particular to a kind of gallium nitride radical heterojunction with composite gate dielectric layer
Field-effect transistor.
Background technology
Gallium nitride (GaN) radical heterojunction field effect transistor has that energy gap is big, critical breakdown electric field is high, electronics saturation
The excellent specific properties such as speed height, good heat conductivity, radioresistance and good chemical stability, while gallium nitride (GaN) material can be with
The two-dimensional electron gas hetero-junctions raceway groove with high concentration and high mobility is formed with materials such as aluminum gallium nitrides (A1GaN), therefore especially
It is one of most potential transistor of applied power electronics suitable for high pressure, high-power and high temperature application.
Fig. 1 is traditional GaN MIS-HFET structural representations based on prior art, is mainly included：Substrate 101, gallium nitride
(GaN) cushion 102, gallium nitride (GaN) channel layer 103, aluminum gallium nitride (A1GaN) barrier layer 104 and gate dielectric layer 105, aluminium
Source electrode 106 and drain electrode 107 are provided with gallium nitrogen (A1GaN) barrier layer 104, grid 108 is provided with gate dielectric layer 105, wherein
Source electrode 105 and drain electrode 106 form Ohmic contact, grid 108 and the shape of gate dielectric layer 105 with aluminum gallium nitride (AlGaN) barrier layer 104
Into MIS structure.
In microwave applications field, for traditional GaN MIS-HFET of prior art, in order to obtain larger direct current mutual conductance,
High-dielectric-coefficient grid medium often is selected, and high-dielectric-coefficient grid medium can introduce big gate capacitance Cg, on the contrary to the electricity of device
Flow enhancement cut-off frequency makes fTInto negative effect.In order to improve current gain cutoff frequencies fT, the most frequently used method is to shorten device
Grid length.It is higher to technological requirement to shorten grid length, meanwhile, the shortening grown with grid will produce serious short-channel effect, lead
Cause subthreshold current increase, the output current of device unsaturated, maximum direct current mutual conductance decline, threshold voltage shift and frequency grid length
Phenomena such as product declines [" Short-Channel Effect Limitations on High-Frequency Operation
Of AlGaN/GaN HEMTs for T-Gate Devices ", IEEE Trans.Electron Devices, vol.54,
No.10, pp.2589-2597, Oct.2007.], adverse effect is caused to the electric property of device on the contrary.
The content of the invention
The technical problems to be solved by the invention be to provide it is a kind of improve device frequency characteristic there is gate stack
The gallium nitride radical heterojunction field effect pipe of layer.
The present invention adopts the following technical scheme that：A kind of gallium nitride radical heterojunction field effect crystal with composite gate dielectric layer
Pipe, its structure as shown in Fig. 2 mainly there is substrate 101 successively from the bottom to top, gallium nitride (GaN) cushion 102, gallium nitride (GaN)
Channel layer 103 and aluminum gallium nitride (A1GaN) barrier layer 104, are respectively equipped with the both ends of the upper surface of aluminum gallium nitride barrier layer 104
Source electrode 106, drain electrode 107, the source electrode 106 and drain 107 with the aluminum gallium nitride barrier layer 104 into Ohmic contact, its feature
It is, composite gate dielectric layer is additionally provided between the source electrode 106 and drain electrode 107 and in the upper surface of aluminum gallium nitride barrier layer 104,
The grid 108 with the composite gate dielectric layer into MIS structure is formed in the composite gate dielectric layer upper surface, the composite grid is situated between
Matter layer is formed by the different high-dielectric-coefficient grid medium layer 201 of dielectric constant with the lateral connection of low-k gate dielectric layer 202,
The dielectric constant of the material therefor of high-dielectric-coefficient grid medium layer 201 is more than used in the low-k gate dielectric layer 202
The dielectric constant of material, the high-dielectric-coefficient grid medium layer 201 abut with the source electrode 106, the medium with low dielectric constant
Layer 202 and the adjoining of drain electrode 107.
The upper surface of described high-dielectric-coefficient grid medium layer 201 and low-k gate dielectric layer 202 with the grid
The lower surface of pole 108 directly contacts.
Further, described dielectric layer of high dielectric constant 201 can be with institute with the interface of low dielectric coefficient medium layer 202
The plane of symmetry for stating grid 108 overlaps.
Described high-dielectric-coefficient grid medium layer 201 is by SiO2、Si3N4、Al2O3、HfO2And TiO2Selected in the material of composition
A kind of material selected is made.
Described low-k gate dielectric layer 202 is by SiO2、Si3N4、Al2O3、HfO2And TiO2Selected in the material of composition
A kind of material selected is made.
Described high-dielectric-coefficient grid medium layer 201 equal with the thickness of low-k gate dielectric layer 202 is Td, and
Meet 1nm≤Td＜ 0.5um.
The beneficial effects of the invention are as follows：
The present invention composite grid that growth is laterally made up of two layers of dielectric of differing dielectric constant in GaN HEMT is situated between
Matter layer so that grid lower channel produces peak electric field at different gate dielectric layer interfaces, electron drift velocity at peak electric field be present
Peak value, make electronics in the overall drift velocity increase of raceway groove, while low-k gate dielectric layer reduces gate capacitance, makes device
The frequency characteristic lifting of part；And peak electric field caused by different gate dielectric layer interfaces reduces the peak electric field at grid leakage edge,
The influence that grid leakage edge electric field gathers caused thermoelectronic effect, current collapse effect can be reduced.The present invention realizes technique letter
It is single, according to the frequency characteristic that device using needs, can be lifted in the case where not sacrificing the reliability situation of device.
Brief description of the drawings
Fig. 1 is the structural representation of conventional GaN MIS-HFET in prior art.
Fig. 2 is the GaN MIS-HFET structural representations provided by the invention with composite gate dielectric layer.
Fig. 3 is the GaN MIS-HFET provided in an embodiment of the present invention with composite gate dielectric layer and conventional GaN MIS-
HFET square transverse electric field distribution contrasts under the gate.
Fig. 4 is the GaN MIS-HFET provided in an embodiment of the present invention with composite gate dielectric layer and conventional GaN MIS-
HFET square electron drift velocity contrasts under the gate.
Fig. 5 is the GaN MIS-HFET provided in an embodiment of the present invention with composite gate dielectric layer and conventional GaN MIS-
HFET transfer characteristic and mutual conductance-voltage characteristic contrast.
Fig. 6 is the GaN MIS-HFET provided in an embodiment of the present invention with composite gate dielectric layer and conventional GaN MIS-
HFET capacitance-voltage characteristics contrast.
Fig. 7 is the GaN MIS-HFET provided in an embodiment of the present invention with composite gate dielectric layer and conventional GaN MIS-
HFET frequency characteristic contrast.
Parts title corresponding to mark is in figure：
101- substrates, 102- gallium nitride (GaN) cushion, 103- gallium nitride (GaN) channel layer, 104- aluminum gallium nitrides
(A1GaN) barrier layer, 105- gate dielectric layers, 106- source electrodes, 107 drain electrodes, 108- grids, 201- dielectric layer of high dielectric constant,
202- low dielectric coefficient medium layers.
Embodiment
The present invention is described in further detail with reference to embodiment.
Embodiment
It is easiest to illustrate that the intention of present invention lifting frequency characteristic and the example of advantage are tied shown in Fig. 2 provided by the invention
The GaN MIS-HFET and conventional structure GaN MIS-HFET (Fig. 1) with composite gate dielectric layer of structure performance comparison；It is above-mentioned
The structural parameters of the instantiation of two devices are provided by table 1.
The microwave device simulation architecture parameter of table 1
Based on GaN HEMT-structures as shown in Figure 3 provided by the invention, the GaN HEMT's of the present embodiment offer is main
Processing step it is as follows：First, on the substrate 101 with MOCVD successively growing gallium nitride cushion 102, gallium nitride channel layer
103rd, aluminum gallium nitride (A1GaN) barrier layer 104, then dielectric layer of high dielectric constant 201 and low Jie are grown with growth selection technology respectively
Constant dielectric layer 202 forms composite gate dielectric layer；Finally, the source electrode 106 with it into Ohmic contact is formed on barrier layer 104
With drain electrode 107, the grid 108 with it into MIS structure is formed in composite gate dielectric layer upper surface.
The dielectric layer of high dielectric constant 201 and low dielectric coefficient medium layer 202 are respectively by by Al2O3And SiO2It is made.
Further, the dielectric constant of the insulating materials of low constant dielectric layer (202) is less than dielectric layer of high dielectric constant
(201) dielectric constant of insulating materials.
Described distance of dielectric layer of high dielectric constant (201) the right-hand member edge away from gate source edge is Lhighk, satisfaction 0≤
Lhighk＜ LG, wherein LGGrown for grid, i.e. the intersection of dielectric layer of high dielectric constant (201) and low dielectric coefficient medium layer (202)
The region immediately below grid.
Described composite gate dielectric layer thickness is Td, meet 1nm≤Td＜ 100nm.
Due to the difference of insulating materials dielectric constant in composite gate dielectric layer, grid lower channel is produced at different gate dielectric layer interfaces
Raw peak electric field, the peak value of electron drift velocity at peak electric field be present, electronics is increased in the overall drift velocity of raceway groove,
Low-k gate dielectric layer reduces gate capacitance simultaneously, lifts the frequency characteristic of device.And different gate dielectric layer interface productions
Raw peak electric field reduces the peak electric field at grid leakage edge, can reduce thermoelectron effect caused by grid leakage edge electric field gathers
Answer, the influence of current collapse effect.
Fig. 3 is the GaN MIS-HFET provided by the invention with composite gate dielectric layer and conventional GaN MIS-HFET in grid
Below pole transverse electric field distribution contrast, it is seen that due to high advanced low-k materials in composite gate dielectric layer dielectric constant not
Together, the GaN MIS-HFET channel laterallies electric fields of composite gate dielectric layer provided by the invention produce volume at high low-k interface
Outer peak electric field, while reduce the peak electric field at script grid leakage edge, grid leakage edge electric field is gathered caused heat
Electronic effect, current collapse effect reduce, and are favorably improved the reliability of device.Fig. 4 has composite grid to be provided by the invention
Square electron drift velocity contrasts under the gate by the GaN MIS-HFET of dielectric layer and conventional GaN MIS-HFET, in Fig. 3 volume
Occur the peak value of electron drift velocity at external electric field peak value, improve electronics square average drift velocity under the gate.
Fig. 5 is turning for the GaN MIS-HFET provided by the invention with composite gate dielectric layer and conventional GaN MIS-HFET
Move characteristic and mutual conductance-voltage characteristic contrast, conventional GaN MIS-HFET maximum direct current mutual conductance gm_maxIt is compound for 231mS/mm
The g of gate dielectric layerm_maxFor 239mS/mm, due to mutual conductance gmIt is directly proportional to the electric capacity of unit area, composite gate dielectric layer in list
In the case that position area capacitance reduces, omited on the contrary because Fig. 3 and Fig. 4 effect makes the mutual conductance of composite gate dielectric layer not decline
There is rising.
Fig. 6 is the GaN MIS-HFET provided by the invention with composite gate dielectric layer and conventional GaN MIS-HFET electricity
Appearance-voltage characteristic contrast, the gate capacitance of conventional structure is 588fF/mm, has the GaN MIS-HFET of composite gate dielectric layer grid
Electric capacity is 533fF/mm, have dropped 9.4%.Fig. 7 be the GaN MIS-HFET provided by the invention with composite gate dielectric layer with
Conventional GaN MIS-HFET frequency characteristic contrast, due to current gain cutoff frequencies fTCan be by fT=gm/(2π·Cg) table
Show, due to the decline of gate capacitance, the GaN MIS-HFET of composite gate dielectric layer fT67.5GHz compared to conventional structure is brought up to
78GHz, improve 17%.
Claims (6)
1. a kind of gallium nitride radical heterojunction field effect transistor with composite gate dielectric layer, its structure are main successively from the bottom to top
There are substrate (101), nitride buffer layer (102), gallium nitride channel layer (103) and aluminum gallium nitride barrier layer (104), in the aluminium
The both ends of gallium nitrogen barrier layer (104) upper surface are respectively equipped with source electrode (106), drain electrode (107), the source electrode (106) and drain electrode
(107) with the aluminum gallium nitride barrier layer (104) into Ohmic contact, it is characterised in that in the source electrode (106) and drain electrode
(107) composite gate dielectric layer is additionally provided between and in aluminum gallium nitride barrier layer (104) upper surface, on the composite gate dielectric layer
Surface forms the grid (108) into MIS structure with the composite gate dielectric layer, and the composite gate dielectric layer is different by dielectric constant
High-dielectric-coefficient grid medium layer (201) and low-k gate dielectric layer (202) lateral connection form, the high-k
The dielectric constant of gate dielectric layer (201) material therefor is more than the dielectric of low-k gate dielectric layer (202) material therefor
Constant, the opposite side of the high-dielectric-coefficient grid medium layer (201) is adjacent with the source electrode (106), and the low-k is situated between
The opposite side of matter layer (202) and the drain electrode (107) are adjacent.
2. the gallium nitride radical heterojunction field effect transistor according to claim 1 with composite gate dielectric layer, its feature
Be, the upper surface of described high-dielectric-coefficient grid medium layer (201) and low-k gate dielectric layer (202) with the grid
The lower surface of pole (108) directly contacts.
3. the gallium nitride radical heterojunction field effect transistor according to claim 2 with composite gate dielectric layer, its feature
It is, interface and the grid of the described dielectric layer of high dielectric constant (201) with low dielectric coefficient medium layer (202)
(108) the plane of symmetry overlaps.
4. the gallium nitride radical heterojunction field effect transistor according to claim 1 with composite gate dielectric layer, its feature
It is, described high-dielectric-coefficient grid medium layer (201) is by SiO2、Si3N4、Al2O3、HfO2And TiO2Selected in the material of composition
A kind of material be made.
5. the gallium nitride radical heterojunction field effect transistor according to claim 1 with composite gate dielectric layer, its feature
It is, described low-k gate dielectric layer (202) is by SiO2、Si3N4、Al2O3、HfO2And TiO2Selected in the material of composition
A kind of material be made.
6. the gallium nitride radical heterojunction field effect transistor according to claim 1 with composite gate dielectric layer, its feature
It is, it is T that described high-dielectric-coefficient grid medium layer (201) is equal with the thickness of low-k gate dielectric layer (202)d,
And meet 1nm≤Td0.5 μm of ＜.
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| US10096702B2 (en) | 2016-06-01 | 2018-10-09 | Efficient Power Conversion Corporation | Multi-step surface passivation structures and methods for fabricating same |
| CN105957894A (en) * | 2016-06-22 | 2016-09-21 | 电子科技大学 | DMOS with composite dielectric layer structure |
| CN106298939A (en) * | 2016-08-22 | 2017-01-04 | 电子科技大学 | A kind of accumulation type DMOS with complex media Rotating fields |
| CN107004129B (en) * | 2017-02-20 | 2020-08-28 | 深圳市飞仙智能科技有限公司 | Capacitive fingerprint sensor, fingerprint sensing device and identification control method thereof |
| US11121245B2 (en) | 2019-02-22 | 2021-09-14 | Efficient Power Conversion Corporation | Field plate structures with patterned surface passivation layers and methods for manufacturing thereof |
| CN111668127B (en) * | 2019-03-07 | 2023-04-25 | 西安电子科技大学 | Hot electron effect test structure based on HEMT device and characterization method thereof |
| CN111863960A (en) * | 2020-07-24 | 2020-10-30 | 北京大学东莞光电研究院 | high-K material-based prototype gate AlGaN/GaN high-electron-mobility transistor and manufacturing method thereof |
| CN112736141A (en) * | 2020-12-17 | 2021-04-30 | 西安国微半导体有限公司 | Nano-sheet transistor with heterogeneous gate dielectric and preparation method |
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| CN101897029A (en) * | 2007-12-10 | 2010-11-24 | 特兰斯夫公司 | Insulated gate E-mode transistors |
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| Title |
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| 《Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors》;Chengxin WANG et al;《Japanese Journal of Applied Physics》;20041126;第44卷(第4B期);第2735-2738页 * |
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