CN108231655A - The method of Electrostatic Absorption substrate - Google Patents
The method of Electrostatic Absorption substrate Download PDFInfo
- Publication number
- CN108231655A CN108231655A CN201810029257.8A CN201810029257A CN108231655A CN 108231655 A CN108231655 A CN 108231655A CN 201810029257 A CN201810029257 A CN 201810029257A CN 108231655 A CN108231655 A CN 108231655A
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- China
- Prior art keywords
- substrate
- layer
- electrostatic absorption
- electrostatic
- film layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Abstract
The present invention provides a kind of method of Electrostatic Absorption substrate, by forming a film layer doped with conducting particles in backside of substrate；And, using electrostatic chuck from backside of substrate absorbable substrate, since electrostatic chuck has larger electrostatic adsorption force to the film layer doped with conducting particles, so as to make electrostatic chuck that there is better adsorption effect for substrate, and then the situation for substrate being caused to come off from electrostatic chuck due to electrostatic chuck is poor to substrate Electrostatic Absorption effect is avoided, avoid unnecessary production loss.
Description
Technical field
The present invention relates to semiconductor preparation field more particularly to a kind of methods of Electrostatic Absorption substrate.
Background technology
In semiconductor fabrication, various boards are usually required through electrostatic chuck come absorbable substrate.Specifically, it is quiet
There are multiple positive and negative electrodes pair, by the way that each electrode is connected high-voltage DC power supply so that electrostatic chuck and substrate in electric sucker
Polarization charge is generated on the face of contact, polarization charge forms electric field on electrostatic chuck surface so that the substrate being in contact with it
Also polarization charge is generated on the back side accordingly, while corresponding free charge is also assembled by electric field action to the back side, in different in nature electricity
Under the action of the electrostatic attraction that lotus generates, substrate is made firmly to be absorbed and fixed on electrostatic chuck.
However, in the fields such as such as radio frequency, the substrate for selecting resistivity higher, such as resistivity is needed to be more than or equal to
The substrate of 750 ohmcms, in this case, since the resistivity of substrate is high, the free charge concentration in corresponding substrate
It is then relatively low, and then in semiconductor fabrication, electrostatic chuck is smaller to the electrostatic attraction in the substrate, is not enough to adsorb
The fixed substrate, and then may result in substrate and fall, cause unnecessary production loss.
Invention content
In order to solve the problems, such as that above-mentioned electrostatic chuck is ineffective to substrate Electrostatic Absorption, the present invention provides a kind of electrostatic
The method of absorbable substrate.
A kind of method of Electrostatic Absorption substrate, including：
There is provided a substrate, the substrate has a front and one and the opposite back side in the front, in the back of the body of the substrate
A film layer doped with conducting particles is formed on face；And
The substrate is adsorbed from the back side of the substrate using an electrostatic chuck, wherein, have in the electrostatic chuck
Charge simultaneously attracts conducting particles in the film layer, with the fixed substrate of absorption.
Optionally, the resistivity of the substrate is more than or equal to 750 Ω cm.
Optionally, the resistivity of the film layer is less than or equal to 20 Ω cm.
Optionally, the film layer is polysilicon layer.
Optionally, the forming method of the film layer includes：
It is respectively formed the film material plies doped with conducting particles on the front and back in the substrate；
The film material plies of the removal on the front of the substrate, and retain on the back side of the substrate
The film material plies, to form the film layer.
Optionally, it is further included before the film material plies are formed：An etching stopping is formed on the front of the substrate
Layer；And after the film material plies on the front removed positioned at the substrate, remove the etching stop layer.
Optionally, the etching stop layer includes one kind or two in silicon dioxide layer, silicon nitride layer and silicon oxynitride layer
Kind and above lamination.
Optionally, a masking layer is also formed in the film layer of the backside of substrate, described in the masking layer covering
Film layer.
Optionally, the masking layer includes silicon oxide layer.
Optionally, the thickness of the film layer is between 300 angstroms~2000 angstroms.
Optionally, the forming method of the film layer includes chemical vapor deposition.
Optionally, the substrate is silicon base.
The method of a kind of Electrostatic Absorption substrate provided by the invention, by being formed in the backside of substrate doped with conductive particle
The film layer of son, since electrostatic chuck has the film layer doped with conducting particles larger electrostatic adsorption force, and then improve
Adsorption effect of the electrostatic chuck to the substrate avoids and the situation that substrate comes off is easy to cause due to adsorption capacity deficiency, into
And avoid unnecessary production loss.
Description of the drawings
Fig. 1 is the flow diagram of the method for Electrostatic Absorption substrate in one embodiment of the invention；
Fig. 2 is the flow signal of the forming method of film layer described in the method for Electrostatic Absorption substrate in one embodiment of the invention
Figure；
Fig. 3~Fig. 7 is that the structure of the preparation process of film layer in the method for Electrostatic Absorption substrate in one embodiment of the invention is shown
It is intended to；
Fig. 8 is the operation principle signal for the electrostatic chuck that the method for Electrostatic Absorption substrate in one embodiment of the invention uses
Figure.
Specific embodiment
A kind of method of Electrostatic Absorption substrate proposed by the present invention is made below in conjunction with the drawings and specific embodiments further
It is described in detail.According to following explanation, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simple
The form of change and using non-accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 is the flow diagram of the method for Electrostatic Absorption substrate in one embodiment of the invention；Fig. 3~Fig. 7 is the present invention
In one embodiment in the method for Electrostatic Absorption substrate the preparation process of film layer structure diagram, below with reference to Fig. 1 and Fig. 3~figure
A kind of specific implementation step of the method for Electrostatic Absorption substrate is provided shown in 7, in the present embodiment, including：
First, with reference to shown in figure 1 and Fig. 7, step S1 is performed, a substrate 100 is provided, the substrate 100 has a front
With one and the opposite back side in the front, a film layer 302 doped with conducting particles is formed on the back side of the substrate；
Due to being formed with the film layer 302 doped with conducting particles on the back side of the substrate 100, utilizing electrostatic
Sucker is from during absorbable substrate 100, being greatly improved absorption dynamics of the electrostatic chuck to substrate 100 on the back side of the substrate 100.
Especially, it when the resistivity of the substrate 100 is larger, more cries and is conducive to improve the adsorption effect to substrate, substrate is avoided to exist
The problem of being fallen in adsorption process.For example, the resistivity of the substrate 100 is, for example, to be more than or equal to 750 Ω cm.
In the art of semiconductor manufacturing, for generally use silicon chip as substrate, common silicon chip resistivity is usually 8~12 Europe
Nurse centimetre, it is seen then that the resistivity of the silicon chip used in the present embodiment is much larger than in common silicon chip namely the present embodiment
The free charge concentration that the silicon chip of use has is relatively low accordingly, thus when directly adsorbing silicon chip using electrostatic chuck, usually
The problem of electrostatic adsorption force that can occur between electrostatic chuck and silicon chip is insufficient, and then easily initiator bottom comes off.
As a preferred scheme, the resistivity of the film layer 302 doped with conducting particles is, for example, to be less than or equal to
20Ω·cm.In the present embodiment, the material of the film layer 302 can be DOPOS doped polycrystalline silicon and the thickness packet of the film layer 302
It includes but is not limited to 300 angstroms~2000 angstroms.
Fig. 2 is the flow signal of the forming method of film layer described in the method for Electrostatic Absorption substrate in one embodiment of the invention
Figure；Fig. 3~Fig. 7 is the structure diagram of the preparation process of film layer in the method for Electrostatic Absorption substrate in one embodiment of the invention.
Below in conjunction with attached drawing 2~7, the forming method of the film layer in the present embodiment is explained：
First, execution step S101, it is shown referring to figs. 2 and 3, form an etch-protecting layer in 100 front of substrate
200。
As a preferred option, the etching stop layer 200 includes but not limited to silicon dioxide layer, silicon nitride layer and nitrogen oxygen
One or both of SiClx layer and above lamination.In the present embodiment, the etching stop layer 200 is silicon dioxide layer,
Forming method is, for example, chemical vapor deposition.The etching stop layer 200 can be used for protecting the front of substrate 100, example
Such as, in subsequent technique, need removal that can pass through the etching stop layer when being formed in the material layer on 100 front of substrate
200 avoid the front of substrate by etching injury etc..
Then, step S102 is performed, with reference to shown in figure 2 and Fig. 4, is mixed in the formation on the front and back of the substrate 100
The miscellaneous film material plies for having conducting particles.It is described doped with the film material plies doped with conducting particles in the present embodiment
For example, doped polysilicon layer 301/302.
Since the concentration of the conducting particles in doped polysilicon layer 302 is more than the concentration of the conducting particles in substrate 100,
That is, the resistivity of doped polysilicon layer 302 is much smaller than substrate 100, therefore adsorbed using electrostatic chuck from the back side of the substrate
During substrate 100, the doped polysilicon layer 302 is capable of providing more free charges, and then passes through the DOPOS doped polycrystalline silicon
302 so that the electrostatic adsorption force bigger between the electrostatic chuck and substrate 100, Electrostatic Absorption effect are more firm and notable.
Specifically, the forming method of the doped polysilicon layer 301/302 includes but not limited to chemical vapor deposition, such as
The doped polysilicon layer 301 and 302 is formed using the method for low-pressure chemical vapor deposition (LPCVD), as a preferred option,
The thickness of the doped polysilicon layer 301/302 is 300 angstroms~2000 angstroms.And in the doped polysilicon layer 301/302
Conducting particles for example can be by injecting, spreading or formed the methods of addition impurity gas in deposition, and in this not go into detail.
Then, execution step S103, it is shown referring to figs. 2 and 5, shape is distinguished on the doped polysilicon layer 301/302
Into a masking layer 401/402.
By forming a masking layer 402 on the surface of the DOPOS doped polycrystalline silicon 302, so as in the masking layer 402
Masking under, conducting particles in DOPOS doped polycrystalline silicon 302 is avoided to be overflowed from the surface of the doped polysilicon layer 302.As can
The scheme of choosing, the masking layer 401/402 are, for example, silicon oxide layer.
Then, step S104 is performed, shown referring to figs. 2 and 6, what removal was located on 100 front of substrate described mixes
Miscellaneous polysilicon layer 301 and the masking layer 401.
Specifically, such as plasma etching may be used in the doped polysilicon layer 301 and the masking layer 401
Method removes, and etching stopping is in etching stop layer 200, so as to effectively prevent carving the damage to 100 surface of substrate.
Then, execution step S105, it is shown with reference to figs. 2 and 7, remove the etch-stop on the high-resistive basement front
Only layer.Wherein, the method that the etching stop layer 200 can also use such as plasma etching removes.It is located at by removal
Etching stop layer 200, doped polysilicon layer 301 and masking layer 401 in substrate front surface, to expose the substrate 100 just
Face impacts to avoid to the implementation of subsequent technique.Due to remaining the doped polysilicon layer at 100 back side of high-resistive basement
302 and masking layer 402, therefore the Electrostatic Absorption effect at the back side can be increased.
Also, with continued reference to shown in Fig. 1, step S2 is performed, institute is adsorbed from the back side of the substrate using an electrostatic chuck
State substrate, wherein, have charge in the electrostatic chuck and attract conducting particles in the film layer, with absorption it is fixed described in
Substrate.
In order to become apparent from, more intuitively illustrate the principle of Electrostatic Absorption in the present invention, below to the work of electrostatic chuck original
Reason is briefly described, and Fig. 8 is that the work for the electrostatic chuck that the method for Electrostatic Absorption substrate in one embodiment of the invention uses is former
Manage schematic diagram.
Refering to what is shown in Fig. 8, the electrostatic chuck is made of dielectric substance, wherein with electrode to 1 and 2, if dielectric
During for insulator ideally, then when electrode is to powering on, 1 and 2 are influenced by electrode in dielectric substance, by
In no free charge, therefore only has polarization charge in dielectric surface, and then the absorption between substrate is only the work of Coulomb force
With.But under actual conditions, dielectric layer and substrate surface are not ideal plane, and the charged particle that can move freely is (freely
Charge) fast transferring can be on the surface of dielectric layer and substrate the defects of with forming electric field in cavity, can further increase
The polarization charge and free charge of dielectric layer and substrate surface, referred to as resulting electrostatic adsorption force, Johnsen-
Rahbek power, abbreviation J-R power.
Typically, J-R power is significantly larger than Coulomb force, is the major part of the electrostatic adsorption force of electrostatic chuck, and when electricity
The resistivity of dielectric layer and substrate is bigger, and the charged particle (free charge) that can move freely is then smaller, and the effect of J-R power is then got over
It is weak, and then the adsorption effect of electrostatic chuck is caused to be deteriorated.Therefore for the larger situation of substrate resistance rate, the present invention provides one kind
The method of Electrostatic Absorption substrate is to improve the Electrostatic Absorption effect of electrostatic chuck.
In the present embodiment, since the backside of substrate is formed with doped polysilicon layer 302 and masking layer 402, work as electrostatic
When sucker adsorbs the substrate 100 from 100 back side of substrate, provided in doped polysilicon layer and masking layer compared with substrate
100 more free charges, and then so that in the electrostatic adsorption force of electrostatic chuck, the effect of J-R power is more notable, so as to increase
Strong Electrostatic Absorption effect of the electrostatic chuck for the substrate, effectively prevents the situation that substrate comes off from electrostatic chuck.
In conclusion in the method for Electrostatic Absorption substrate provided by the invention, by forming one in the backside of substrate
Doped with the film layer of conducting particles；And the substrate is adsorbed from the backside of substrate using electrostatic chuck, it is quiet so as to increase
Electric sucker for the substrate Electrostatic Absorption effect, and then avoid because electrostatic chuck to substrate Electrostatic Absorption effect difference due to lead
The situation that the substrate is caused to come off from electrostatic chuck avoids unnecessary production loss.
Obviously, those skilled in the art can carry out invention spirit of the various modification and variations without departing from the present invention
And range.If in this way, these modification and variations of the present invention belong to the claims in the present invention and its equivalent technologies range it
Interior, then the present invention is also intended to including these changes and changing.
Claims (12)
- A kind of 1. method of Electrostatic Absorption substrate, which is characterized in that including：There is provided a substrate, the substrate has a front and one and the opposite back side in the front, on the back side of the substrate It is formed with a film layer doped with conducting particles；AndThe substrate is adsorbed from the back side of the substrate using an electrostatic chuck, wherein, there is charge in the electrostatic chuck And attract conducting particles in the film layer, with the fixed substrate of absorption.
- 2. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the resistivity of the substrate is more than Equal to 750 Ω cm.
- 3. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the resistivity of the film layer is less than Equal to 20 Ω cm.
- 4. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the film layer is polysilicon layer.
- 5. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the forming method packet of the film layer It includes：It is respectively formed the film material plies doped with conducting particles on the front and back in the substrate；The film material plies of the removal on the front of the substrate, and retain described on the back side of the substrate Film material plies, to form the film layer.
- 6. according to the method for the Electrostatic Absorption substrate described in claim 5, which is characterized in that forming the film material plies It further includes before：An etching stop layer is formed on the front of the substrate；And on front of the removal positioned at the substrate The film material plies after, remove the etching stop layer.
- 7. according to the method for the Electrostatic Absorption substrate described in claim 6, which is characterized in that the etching stop layer includes two One or both of silicon oxide layer, silicon nitride layer and silicon oxynitride layer and above lamination.
- 8. the method for Electrostatic Absorption substrate according to claim 1, which is characterized in that in the film of the backside of substrate A masking layer is also formed on layer, the masking layer covers the film layer.
- 9. the method for Electrostatic Absorption substrate according to claim 8, which is characterized in that the masking layer includes silica Layer.
- 10. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the thickness of the film layer between Between 300 angstroms~2000 angstroms.
- 11. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the forming method of the film layer Including chemical vapor deposition.
- 12. according to the method for the Electrostatic Absorption substrate described in claim 1, which is characterized in that the substrate is silicon base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029257.8A CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029257.8A CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
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| Publication Number | Publication Date |
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| CN108231655A true CN108231655A (en) | 2018-06-29 |
| CN108231655B CN108231655B (en) | 2020-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810029257.8A Active CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420493A (en) * | 2020-11-26 | 2021-02-26 | 华虹半导体(无锡)有限公司 | Method for improving adsorption state of wafer on electrostatic chuck |
| CN115041329A (en) * | 2022-07-11 | 2022-09-13 | 王理航 | Spraying device for preparing metal ceramic solar heat absorbing film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790889A (en) * | 2004-11-30 | 2006-06-21 | 三洋电机株式会社 | Processing method of adsorbate and electrostatic sucking method |
| CN103681782A (en) * | 2012-09-04 | 2014-03-26 | 台湾积体电路制造股份有限公司 | Method for extreme ultraviolet electrostatic chuck with reduced clamping effect |
-
2018
- 2018-01-12 CN CN201810029257.8A patent/CN108231655B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790889A (en) * | 2004-11-30 | 2006-06-21 | 三洋电机株式会社 | Processing method of adsorbate and electrostatic sucking method |
| CN103681782A (en) * | 2012-09-04 | 2014-03-26 | 台湾积体电路制造股份有限公司 | Method for extreme ultraviolet electrostatic chuck with reduced clamping effect |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420493A (en) * | 2020-11-26 | 2021-02-26 | 华虹半导体(无锡)有限公司 | Method for improving adsorption state of wafer on electrostatic chuck |
| CN115041329A (en) * | 2022-07-11 | 2022-09-13 | 王理航 | Spraying device for preparing metal ceramic solar heat absorbing film |
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| Publication number | Publication date |
|---|---|
| CN108231655B (en) | 2020-06-16 |
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