CN108231655B - Method for electrostatically attracting a substrate - Google Patents
Method for electrostatically attracting a substrate Download PDFInfo
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- CN108231655B CN108231655B CN201810029257.8A CN201810029257A CN108231655B CN 108231655 B CN108231655 B CN 108231655B CN 201810029257 A CN201810029257 A CN 201810029257A CN 108231655 B CN108231655 B CN 108231655B
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- substrate
- layer
- electrostatic chuck
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- film layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a method for electrostatically adsorbing a substrate, which comprises the steps of forming a film layer doped with conductive particles on the back surface of the substrate; and the electrostatic chuck is utilized to adsorb the substrate from the back of the substrate, and the electrostatic chuck has larger electrostatic adsorption force on the film layer doped with the conductive particles, so that the electrostatic chuck has better adsorption effect on the substrate, thereby avoiding the condition that the substrate falls off from the electrostatic chuck due to poor electrostatic adsorption effect of the electrostatic chuck on the substrate, and avoiding unnecessary production loss.
Description
Technical Field
The invention relates to the field of semiconductor preparation, in particular to a method for electrostatically adsorbing a substrate.
Background
In semiconductor manufacturing, various tools typically require an electrostatic chuck to hold a substrate. Specifically, the electrostatic chuck is provided with a plurality of positive and negative electrode pairs, each electrode is connected with a high-voltage direct-current power supply, so that polarized charges are generated on the surface of the electrostatic chuck, an electric field is formed on the surface of the electrostatic chuck, the corresponding polarized charges are generated on the back surface of the substrate contacted with the electrostatic chuck, corresponding free charges are gathered to the back surface under the action of the electric field, and the substrate is firmly adsorbed and fixed on the electrostatic chuck under the action of electrostatic attraction force generated by the opposite charges.
However, in the field of radio frequency, etc., it is necessary to select a substrate with a higher resistivity, for example, a substrate with a resistivity of 750 ohm · cm or more, in this case, since the resistivity of the substrate is high, the corresponding free charge concentration in the substrate is low, and further, in the semiconductor manufacturing process, the electrostatic attraction of the electrostatic chuck to the substrate is small, which is not enough to attract and fix the substrate, and further, the substrate may be dropped, causing unnecessary production loss.
Disclosure of Invention
In order to solve the problem that the electrostatic chuck has poor electrostatic adsorption effect on the substrate, the invention provides a method for electrostatically adsorbing the substrate.
A method of electrostatically chucking a substrate comprising:
providing a substrate, wherein the substrate is provided with a front surface and a back surface opposite to the front surface, and a film layer doped with conductive particles is formed on the back surface of the substrate; and the number of the first and second groups,
and adsorbing the substrate from the back surface of the substrate by using an electrostatic chuck, wherein the electrostatic chuck generates charges and attracts conductive particles in the film layer so as to adsorb and fix the substrate.
Optionally, the resistivity of the substrate is greater than or equal to 750 Ω · cm.
Optionally, the resistivity of the film layer is less than or equal to 20 Ω · cm.
Optionally, the film layer is a polysilicon layer.
Optionally, the method for forming the film layer includes:
respectively forming a thin film material layer doped with conductive particles on the front surface and the back surface of the substrate;
and removing the film material layer on the front surface of the substrate and remaining the film material layer on the back surface of the substrate to form the film layer.
Optionally, before forming the thin film material layer, the method further includes: forming an etching stop layer on the front surface of the substrate; and removing the etching stop layer after removing the film material layer on the front surface of the substrate.
Optionally, the etch stop layer includes one or two or more stacked layers of a silicon dioxide layer, a silicon nitride layer, and a silicon oxynitride layer.
Optionally, a masking layer is further formed on the film layer on the back surface of the substrate, and the masking layer covers the film layer.
Optionally, the masking layer comprises a silicon oxide layer.
Optionally, the thickness of the film layer is between 300 angstroms and 2000 angstroms.
Optionally, the film layer forming method includes chemical vapor deposition.
Optionally, the substrate is a silicon substrate.
According to the method for electrostatically adsorbing the substrate, the film layer doped with the conductive particles is formed on the back surface of the substrate, and the electrostatic chuck has larger electrostatic adsorption force on the film layer doped with the conductive particles, so that the adsorption effect of the electrostatic chuck on the substrate is improved, the condition that the substrate is easy to fall off due to insufficient adsorption force is avoided, and unnecessary production loss is avoided.
Drawings
FIG. 1 is a schematic flow chart illustrating a method for electrostatically chucking a substrate in accordance with one embodiment of the present invention;
FIG. 2 is a flow chart illustrating a method for forming a layer in a method for electrostatically attracting a substrate in accordance with an embodiment of the present invention;
FIGS. 3 to 7 are schematic structural views illustrating a process of preparing a film layer in a method of electrostatically attracting a substrate according to an embodiment of the present invention;
FIG. 8 is a schematic diagram illustrating the operation of an electrostatic chuck used in a method of electrostatically chucking a substrate in an embodiment of the present invention.
Detailed Description
The method for electrostatically attracting a substrate according to the present invention will be described in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
FIG. 1 is a schematic flow chart illustrating a method for electrostatically chucking a substrate in accordance with one embodiment of the present invention; fig. 3 to 7 are schematic structural diagrams illustrating a process for preparing a film layer in a method for electrostatically adsorbing a substrate according to an embodiment of the present invention, and referring to fig. 1 and fig. 3 to 7, a specific implementation step of the method for electrostatically adsorbing a substrate is provided in this embodiment, which includes:
first, referring to fig. 1 and 7, step S1 is performed to provide a substrate 100, where the substrate 100 has a front surface and a back surface opposite to the front surface, and a film 302 doped with conductive particles is formed on the back surface of the substrate;
since the film layer 302 doped with the conductive particles is formed on the back surface of the substrate 100, when the substrate 100 is adsorbed from the back surface of the substrate 100 by using the electrostatic chuck, the adsorption force of the electrostatic chuck to the substrate 100 can be greatly improved. In particular, when the resistivity of the substrate 100 is relatively high, the adsorption effect on the substrate is improved, and the problem that the substrate falls off in the adsorption process is avoided. For example, the resistivity of the substrate 100 is, for example, 750 Ω · cm or more.
In the field of semiconductor manufacturing, a silicon wafer is usually used as a substrate, the resistivity of a common silicon wafer is usually 8-12 ohm/cm, and thus, the resistivity of the silicon wafer used in the embodiment is much higher than that of the common silicon wafer, that is, the silicon wafer used in the embodiment has a correspondingly low free charge concentration, so that when the electrostatic chuck is used for directly adsorbing the silicon wafer, the problem that the electrostatic adsorption force between the electrostatic chuck and the silicon wafer is insufficient, and the substrate is easy to fall off is often caused.
Preferably, the resistivity of the conductive particle-doped film layer 302 is, for example, 20 Ω · cm or less. In this embodiment, the material of the film layer 302 may be doped polysilicon, and the thickness of the film layer 302 includes, but is not limited to, 300 angstroms to 2000 angstroms.
FIG. 2 is a flow chart illustrating a method for forming a layer in a method for electrostatically attracting a substrate in accordance with an embodiment of the present invention; fig. 3 to 7 are schematic structural diagrams illustrating a process of preparing a film layer in a method of electrostatically attracting a substrate according to an embodiment of the present invention. The following explains a method for forming a film layer in this embodiment with reference to fig. 2 to 7:
first, step S101 is performed, and referring to fig. 2 and fig. 3, an etching protection layer 200 is formed on the front surface of the substrate 100.
Preferably, the etch stop layer 200 includes, but is not limited to, one or a stack of two or more of a silicon dioxide layer, a silicon nitride layer, and a silicon oxynitride layer. In this embodiment, the etch stop layer 200 is a silicon dioxide layer, and the forming method thereof is, for example, chemical vapor deposition. The etch stop layer 200 may be used to protect the front surface of the substrate 100, for example, when a material layer formed on the front surface of the substrate 100 needs to be removed in a subsequent process, the front surface of the substrate may be protected from being damaged by etching through the etch stop layer 200.
Next, step S102 is performed, and referring to fig. 2 and 4, a thin film material layer doped with conductive particles is formed on the front and back surfaces of the substrate 100. In this embodiment, the thin film material layer doped with the conductive particles is, for example, a doped polysilicon layer 301/302.
Since the concentration of the conductive particles in the doped polysilicon layer 302 is greater than that of the conductive particles in the substrate 100, that is, the resistivity of the doped polysilicon layer 302 is much smaller than that of the substrate 100, when the substrate 100 is adsorbed from the back of the substrate by using the electrostatic chuck, the doped polysilicon layer 302 can provide more free charges, and further, the electrostatic adsorption force between the electrostatic chuck and the substrate 100 is greater and the electrostatic adsorption effect is more stable and significant through the doped polysilicon layer 302.
Specifically, the method for forming the doped polysilicon layer 301/302 includes, but is not limited to, chemical vapor deposition (cvd), for example, a Low Pressure Cvd (LPCVD) method is used to form the doped polysilicon layers 301 and 302, and preferably, the doped polysilicon layer 301/302 has a thickness of 300 to 2000 angstroms. The conductive particles in the doped polysilicon layer 301/302 can be formed by implantation, diffusion, or doping during deposition, for example, and will not be described in detail herein.
Next, step S103 is performed, and referring to fig. 2 and fig. 5, a masking layer 401/402 is formed on the doped polysilicon layer 301/302 respectively.
By forming a masking layer 402 on the surface of the doped polysilicon layer 302, the conductive particles in the doped polysilicon layer 302 can be prevented from overflowing from the surface of the doped polysilicon layer 302 under the masking of the masking layer 402. Alternatively, the masking layer 401/402 is, for example, a silicon oxide layer.
Next, step S104 is performed, and referring to fig. 2 and fig. 6, the doped polysilicon layer 301 and the masking layer 401 on the front surface of the substrate 100 are removed.
Specifically, the doped polysilicon layer 301 and the masking layer 401 can be removed by, for example, plasma etching, and the etching is stopped at the etching stop layer 200, thereby effectively avoiding the damage of the over-etching on the surface of the substrate 100.
Then, step S105 is performed, and referring to fig. 2 and fig. 7, the etching stop layer on the front surface of the high-resistance substrate is removed. The etch stop layer 200 may also be removed by, for example, plasma etching. The front surface of the substrate 100 is exposed by removing the etch stop layer 200, the doped polysilicon layer 301 and the masking layer 401 on the front surface of the substrate, so as to avoid affecting the implementation of the subsequent processes. Since the doped polysilicon layer 302 and the mask layer 402 on the back surface of the high resistance substrate 100 remain, the electrostatic attraction effect on the back surface can be increased.
And, with continued reference to fig. 1, step S2 is performed to attract the substrate from the back side of the substrate by an electrostatic chuck, wherein the electrostatic chuck generates charges and attracts the conductive particles in the film layer to attract and fix the substrate.
In order to more clearly and intuitively explain the principle of electrostatic attraction in the present invention, the operation of the electrostatic chuck will be briefly described below, and fig. 8 is a schematic diagram illustrating the operation of the electrostatic chuck used in the method of electrostatically attracting a substrate according to an embodiment of the present invention.
Referring to fig. 8, the electrostatic chuck is made of a dielectric material, which has a pair of electrodes 1 and 2, and if the dielectric is ideally an insulator, when the pair of electrodes is powered on, the dielectric material is affected by the pair of electrodes 1 and 2, and because there is no free charge, there is only polarized charge on the dielectric surface, and thus the attraction between the substrate is the coulomb force action. However, in practical situations, the dielectric layer and the substrate surface are not ideal planes, and the rapid migration of the freely movable charged particles (free charges) can form an electric field in the defects and voids on the surfaces of the dielectric layer and the substrate, which can further increase the polarization charges and the free charges on the surfaces of the dielectric layer and the substrate, so that the generated electrostatic adsorption force is called Johnsen-Rahbek force, which is called J-R force for short.
Generally, the J-R force is much larger than the coulomb force and is a major part of the electrostatic attraction of the electrostatic chuck, and as the resistivity of the dielectric layer and the substrate is higher, the freely movable charged particles (free charges) are smaller, and the J-R force is weaker, thereby deteriorating the attraction effect of the electrostatic chuck. Therefore, the invention provides a method for electrostatically attracting a substrate to improve the electrostatic attraction effect of the electrostatic chuck, aiming at the condition that the substrate has larger resistivity.
In this embodiment, since the doped polysilicon layer 302 and the masking layer 402 are formed on the back surface of the substrate, when the electrostatic chuck adsorbs the substrate 100 from the back surface of the substrate 100, more free charges are provided in the doped polysilicon layer and the masking layer than in the substrate 100, and further, in the electrostatic adsorption force of the electrostatic chuck, the J-R force action is more significant, so that the electrostatic adsorption effect of the electrostatic chuck on the substrate is enhanced, and the substrate is effectively prevented from falling off from the electrostatic chuck.
In summary, in the method for electrostatically adsorbing a substrate according to the present invention, a film layer doped with conductive particles is formed on the back surface of the substrate; and the electrostatic chuck is utilized to adsorb the substrate from the back surface of the substrate, so that the electrostatic adsorption effect of the electrostatic chuck on the substrate is increased, the condition that the substrate falls off from the electrostatic chuck due to the poor electrostatic adsorption effect of the electrostatic chuck on the substrate is avoided, and unnecessary production loss is avoided.
It will be apparent to those skilled in the art that various changes and modifications may be made in the invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (11)
1. A method of electrostatically chucking a substrate, comprising:
providing a substrate, wherein the substrate is provided with a front surface and a back surface opposite to the front surface, a film layer doped with conductive particles is formed on the back surface of the substrate, and a masking layer is further formed on the film layer on the back surface of the substrate and covers the film layer; and the number of the first and second groups,
and adsorbing the substrate from the back surface of the substrate by using an electrostatic chuck, wherein the electrostatic chuck generates charges and attracts conductive particles in the film layer so as to adsorb and fix the substrate.
2. A method of electrostatically attracting a substrate as recited in claim 1, wherein said substrate has a resistivity of 750 Ω -cm or more.
3. A method of electrostatically attracting a substrate as recited in claim 1, wherein said film layer has a resistivity of 20 Ω -cm or less.
4. The method of electrostatically attracting a substrate as set forth in claim 1, wherein said film layer is a polysilicon layer.
5. The method of electrostatically attracting a substrate as set forth in claim 1, wherein the film layer is formed by a method comprising:
respectively forming a thin film material layer doped with conductive particles on the front surface and the back surface of the substrate;
and removing the film material layer on the front surface of the substrate and remaining the film material layer on the back surface of the substrate to form the film layer.
6. The method of electrostatically attracting a substrate as set forth in claim 5, further comprising, prior to forming the thin-film material layer: forming an etching stop layer on the front surface of the substrate; and removing the etching stop layer after removing the film material layer on the front surface of the substrate.
7. The method according to claim 6, wherein the etching stopper layer comprises a stacked layer of one or two or more of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
8. The method of electrostatically attracting a substrate as set forth in claim 1, wherein the masking layer comprises a silicon oxide layer.
9. The method of claim 1, wherein the film layer has a thickness of between about 300 angstroms and about 2000 angstroms.
10. A method of electrostatically attracting a substrate as set forth in claim 1 wherein the film layer is formed by a process comprising chemical vapor deposition.
11. A method of electrostatically chucking a substrate as claimed in claim 1, wherein said substrate is a silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029257.8A CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029257.8A CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
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| Publication Number | Publication Date |
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| CN108231655A CN108231655A (en) | 2018-06-29 |
| CN108231655B true CN108231655B (en) | 2020-06-16 |
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| CN201810029257.8A Active CN108231655B (en) | 2018-01-12 | 2018-01-12 | Method for electrostatically attracting a substrate |
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| CN112420493A (en) * | 2020-11-26 | 2021-02-26 | 华虹半导体(无锡)有限公司 | Method for improving adsorption state of wafer on electrostatic chuck |
| CN115041329B (en) * | 2022-07-11 | 2023-03-31 | 王理航 | Spraying device for preparing metal ceramic solar heat absorbing film |
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| TWI271815B (en) * | 2004-11-30 | 2007-01-21 | Sanyo Electric Co | Method for processing stuck object and electrostatic sticking method |
| US8765582B2 (en) * | 2012-09-04 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for extreme ultraviolet electrostatic chuck with reduced clamp effect |
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