CN115985748A - Wafer desorption method and device in capacitive coupling plasma radio frequency mode - Google Patents
Wafer desorption method and device in capacitive coupling plasma radio frequency mode Download PDFInfo
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- CN115985748A CN115985748A CN202310134550.1A CN202310134550A CN115985748A CN 115985748 A CN115985748 A CN 115985748A CN 202310134550 A CN202310134550 A CN 202310134550A CN 115985748 A CN115985748 A CN 115985748A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000003795 desorption Methods 0.000 title claims abstract description 52
- 230000008878 coupling Effects 0.000 title claims abstract description 12
- 238000010168 coupling process Methods 0.000 title claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000001020 plasma etching Methods 0.000 claims abstract description 61
- 239000007789 gas Substances 0.000 claims abstract description 30
- 238000001179 sorption measurement Methods 0.000 claims abstract description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 19
- 230000010287 polarization Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 abstract description 19
- 238000005530 etching Methods 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001643 poly(ether ketone) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application provides a wafer desorption method and device in a capacitive coupling plasma radio frequency mode. The method comprises the following steps: providing a plasma etching reaction chamber, wherein an electrostatic chuck is arranged in the plasma etching reaction chamber, the electrostatic chuck comprises a first electrode, and the wafer is fixed on the surface of the electrostatic chuck in an electrostatic adsorption mode by applying a first voltage to the first electrode; in the step of desorbing the wafer, nitrogen is introduced into the plasma etching reaction chamber to serve as desorption gas, and the first voltage on the first electrode is reduced to a preset voltage, so that the electrostatic adsorption between the wafer and the electrostatic chuck is eliminated. According to the method, nitrogen is selected as desorption gas, so that bombardment of the desorption gas on the surface of the wafer in the wafer desorption process can be reduced, the damage of the nitrogen on the surface of the wafer can be repaired to a certain extent, and the defects caused by etching in a capacitive coupling plasma radio frequency mode can be overcome.
Description
Technical Field
The present disclosure relates to the field of semiconductor processing technologies, and in particular, to a method and an apparatus for wafer desorption in a capacitively coupled plasma rf mode.
Background
With the advent of silicon gate MOS devices, polysilicon has gradually become the dominant material for advanced devices. Besides being used as MOS grid, polysilicon is widely applied to filling deep trench capacitor plates and bit lines in flash memory processes, and the processes can be realized by silicon-free etching technology. The etching techniques are mainly classified into dry etching and wet etching. The dry etching can realize anisotropic etching, and meets the requirements of high precision and high integration of the semiconductor manufacturing at the present stage, so that the dry etching process is basically adopted in the small-size advanced process, and the dry etching machine occupies an absolute mainstream position in the semiconductor etching market. Currently, silicon dry etching is commonly performed in a Capacitive Coupled Plasma (CCP) Radio Frequency (RF) mode. The wafer needs to be held on an electrostatic chuck within the reaction chamber before plasma etching is performed. An electrostatic chuck is a fixture for holding a wafer in a vacuum and plasma environment using the principle of electrostatic attraction. The wafer fixing device is mainly used for fixing the wafer, preventing the wafer from moving or deforming in the etching process and controlling the temperature of the wafer. The electrostatic chuck mainly comprises a first electrode and a dielectric layer, wherein the wafer is placed above the first electrode through the dielectric layer, and before the etching process is started, the first electrode of the electrostatic chuck is provided with electrostatic voltage to form an electrostatic field on the electrostatic chuck, so that the wafer is adsorbed and fixed on the electrostatic chuck. And desorbing the wafer after the plasma etching is finished so as to separate the wafer from the electrostatic chuck, and taking the wafer out of the reaction cavity by using the manipulator for the next operation.
In the conventional wafer desorption method, a reverse voltage with opposite polarity is applied to the first electrode to remove the electrostatic charges on the surface of the electrostatic chuck, but since the adsorption and desorption steps are performed in a vacuum environment, the reverse voltage cannot completely remove the electrostatic charges on the wafer, and therefore, an auxiliary gas needs to be introduced for desorption. In the conventional CCP RF mode, desorption of a wafer is generally performed by introducing argon (Ar) gas after etching. During the plasma etching process, the damage of the high-intensity plasma bombardment on the surface of the wafer can generate an etching defect. And the argon gas has a large molecular mass, which deteriorates defects generated during plasma etching.
Therefore, it is necessary to improve the desorption technique of the wafer, reduce the bombardment of the desorption gas on the surface of the wafer during the desorption process of the wafer, and improve the problem of etching defects in the rf mode of the capacitively coupled plasma.
Disclosure of Invention
The technical problem to be solved by the application is to provide a method and a device for desorbing a wafer in a capacitive coupling plasma radio frequency mode, which can reduce bombardment of desorbed gas on the surface of the wafer in the desorption process of the wafer and improve the problem of silicon etching defects in the capacitive coupling plasma radio frequency mode.
In order to solve the above problems, the present application provides a method for desorbing a wafer in a capacitively coupled plasma rf mode, comprising the steps of: providing a plasma etching reaction chamber, wherein an electrostatic chuck is arranged in the plasma etching reaction chamber, the electrostatic chuck comprises a first electrode, and the wafer is fixed on the surface of the electrostatic chuck in an electrostatic adsorption mode by applying a first voltage to the first electrode; in the step of desorbing the wafer, nitrogen is introduced into the plasma etching reaction chamber to serve as desorption gas, and the first voltage on the first electrode is reduced to a preset voltage, so that the electrostatic adsorption between the wafer and the electrostatic chuck is eliminated.
In some embodiments, the electrostatic chuck further comprises a dielectric layer covering the first electrode, and when the first voltage is applied to the first electrode, polarization charges are generated on the surface of the dielectric layer so as to attract and fix the wafer.
In some embodiments, a vent is further disposed in the plasma etching reaction chamber, the vent is disposed on a sidewall of the plasma etching reaction chamber and connected to a nitrogen gas source, and the vent is configured to introduce the nitrogen gas into the plasma etching reaction chamber as a desorption gas during the step of desorbing the wafer.
In some embodiments, the plasma etching reaction chamber further has a second electrode disposed opposite to the first electrode, and the step of desorbing the wafer is performed by applying a second voltage to the second electrode to excite the nitrogen gas into a plasma, so as to release the electrostatic adsorption between the wafer and the electrostatic chuck.
In some embodiments, the temperature within the plasma etch reaction chamber during de-clamping of the wafer and the electrostatic chuck is 20 ℃.
In some embodiments, the step of introducing nitrogen gas as a desorption gas into the plasma etching reaction chamber further comprises: and controlling the pressure in the plasma etching reaction chamber to be a first set pressure.
In some embodiments, the step of reducing the first voltage on the first electrode to a preset voltage further comprises: reducing the first voltage on the first electrode to 0.
In order to solve the above problem, the present application further provides a device for desorbing a wafer in an rf mode of a capacitively coupled plasma, including: a plasma etching reaction chamber; the electrostatic chuck is arranged in the plasma etching reaction chamber and comprises a first electrode, when a first voltage is applied to the first electrode, a wafer is adsorbed and fixed on the surface of the electrostatic chuck in an electrostatic adsorption mode, and when the first voltage on the first electrode is reduced to a preset voltage, the electrostatic adsorption between the wafer and the electrostatic chuck is relieved; and the air vent is arranged on the side wall of the plasma etching reaction chamber and connected to a nitrogen source, and is used for introducing nitrogen into the plasma etching reaction chamber as desorption gas in the step of desorbing the wafer so as to remove the electrostatic adsorption between the wafer and the electrostatic chuck.
In some embodiments, the electrostatic chuck further comprises a dielectric layer covering the first electrode, and when the first voltage is applied to the first electrode, polarization charges are generated on the surface of the dielectric layer so as to attract and fix the wafer.
In some embodiments, the plasma etching reaction chamber further has a second electrode disposed opposite to the first electrode, and the step of desorbing the wafer is performed by applying a second voltage to the second electrode to excite the nitrogen gas into a plasma, so as to release the electrostatic adsorption between the wafer and the electrostatic chuck.
According to the technical scheme, nitrogen is selected as desorption gas to remove the electrostatic adsorption on the surfaces of the wafer and the electrostatic chuck, so that the bombardment of the desorption gas on the surface of the wafer in the wafer desorption process can be reduced, the damage on the surface of the wafer is weakened, the etching damage on the surface of the wafer is also repaired to a certain extent by the nitrogen, and the defects caused by etching in a capacitive coupling plasma radio frequency mode can be overcome.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application. Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments described in the present application, the drawings used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained by those skilled in the art without inventive efforts.
FIG. 1 is a schematic diagram illustrating an implementation procedure of one embodiment of a wafer desorption method in a capacitively coupled plasma RF mode according to the present application;
fig. 2 to fig. 3 are schematic device structures corresponding to main steps of an embodiment of a wafer desorption method in the rf mode of the capacitively coupled plasma according to the present application;
fig. 4 is a schematic diagram of an embodiment of a wafer desorption apparatus in rf mode for capacitively coupled plasma according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the embodiments described are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments that can be derived by a person skilled in the art from the detailed description of the invention herein without making any creative effort fall within the protection scope of the present application.
One embodiment of the present application provides a method for desorption of a wafer in a capacitively coupled plasma rf mode.
Please refer to fig. 1, which is a schematic diagram illustrating an implementation procedure of an embodiment of a method for wafer desorption in a rf mode of a capacitively coupled plasma according to the present application. As shown in fig. 1, the wafer desorption method according to the present embodiment includes: step S101, providing a plasma etching reaction chamber, wherein an electrostatic chuck is arranged in the plasma etching reaction chamber and comprises a first electrode, and fixing the wafer on the surface of the electrostatic chuck in an electrostatic adsorption mode by applying a first voltage to the first electrode; step S102, in the step of desorbing the wafer, nitrogen is introduced into the plasma etching reaction chamber to serve as desorption gas, and the first voltage on the first electrode is reduced to a preset voltage, so that electrostatic adsorption between the wafer and the electrostatic chuck is eliminated.
In the specific embodiment, nitrogen is introduced into the plasma etching reaction chamber as desorption gas, and the first voltage on the first electrode is reduced to a preset voltage, so that electrostatic adsorption of the wafer and the surface of the electrostatic chuck is removed, bombardment of the desorption gas on the surface of the wafer in the wafer desorption process can be reduced, damage to the surface of the wafer is weakened, and the problem of etching defects in a capacitive coupling plasma radio frequency mode is solved.
Fig. 2 to 3 are schematic device structures corresponding to main steps of an embodiment of a method for desorbing a wafer in a capacitively coupled plasma rf mode according to the present application.
Referring to fig. 2, referring to step S101, a plasma etching reaction chamber 21 is provided, an electrostatic chuck 22 is disposed in the plasma etching reaction chamber 21, the electrostatic chuck 22 includes a first electrode 221, and the wafer 27 is fixed on the surface of the electrostatic chuck 22 by applying a first voltage to the first electrode 221. In the present embodiment, the electrostatic chuck 22 fixes the wafer 27 by electrostatic attraction. Compared with the traditional mechanical chuck and vacuum chuck, the electrostatic chuck 22 reduces the problem of damage to the wafer 27 caused by pressure and the like when the mechanical chuck is used, increases the effective processing area of the wafer 27, and reduces the deposition of corrosive particles on the surface of the wafer 27; and the electrostatic chuck 22 may operate in a vacuum environment.
Further, in the present embodiment, the electrostatic chuck 22 further includes a dielectric layer 222 covering the first electrode 221, and when the first voltage is applied to the first electrode 221, polarization charges are generated on the surface of the dielectric layer 222 to attract and fix the wafer 27. The electrostatic chuck 22 utilizes coulomb force or Johnsen-Rahbek (JR) force between the wafer 27 and the first electrode 221 to secure the wafer 27. The dielectric layer 222 in the form of coulomb chuck is a pure dielectric and the dielectric layer 222 in the form of JR chuck is a doped dielectric. In the case of a coulomb chuck, when the first electrode 221 is connected to a high voltage low current dc power supply, polarization charges are generated on the surface of the dielectric layer 222 in the absence of plasma, thereby attracting and fixing the wafer 27. For a JR chuck, when the first electrode 221 is connected to a high voltage low current dc power source, the surface of the dielectric layer 222 not only generates polarization charges, but also a large portion of free charges because the dielectric layer 222 of the JR chuck has some conductivity. The surface charge of dielectric layer 222 in contact with wafer 27 creates an electric field that further creates a polarization charge on the surface of wafer 27 that is placed on the chuck, the charge distributed on the surface of wafer 27 in contact with dielectric layer 222 being opposite in polarity to the charge distributed on the surface of dielectric layer 222 in contact with wafer 27, such that wafer 27 is held by the JR chuck. In the present embodiment, the electrostatic chuck 22 fixes the wafer 27 by adsorption by coulomb force.
Further, in the present embodiment, the first electrode 221 is a single electrode. In other embodiments, the first electrode 221 may be a double electrode. In this embodiment, the material of the dielectric layer 222 is aluminum nitride ceramic. In other embodiments, the material of the dielectric layer 222 may be any one or a combination of aluminum nitride ceramic, aluminum oxide, polyethylene terephthalate, and polyether ketone.
Further, in the present embodiment, a base 23 is further disposed in the plasma etching reaction chamber 21, and the base 23 is disposed at the bottom of the plasma etching reaction chamber 21 and is used for fixing the electrostatic chuck 22. In the present embodiment, the electrostatic chuck 22 is fixed to the surface of the base 23 by an adhesive.
Referring to fig. 3, in the step of desorbing the wafer 27, referring to step S102, the wafer 27 and the electrostatic chuck 22 are desorbed by introducing nitrogen gas as a desorption gas into the plasma etching reaction chamber 21 and reducing the first voltage on the first electrode 221 to a predetermined voltage.
Further, in the present embodiment, a vent 24 is further disposed in the plasma etching reaction chamber 21. The vent 24 is disposed on a sidewall of the plasma etching reaction chamber 21 and connected to a nitrogen gas source 25, and the vent 24 is configured to introduce the nitrogen gas into the plasma etching reaction chamber 21 as a desorption gas in the step of desorbing the wafer 27.
Further, in the present embodiment, the plasma etching reaction chamber 21 further has a second electrode 26 disposed opposite to the first electrode 221. The second electrode 26 is used to excite the nitrogen gas into plasma in the step of desorbing the wafer 27.
Further, in the present embodiment, in the process of releasing the electrostatic adsorption between the wafer 27 and the electrostatic chuck 22, the temperature in the plasma etching reaction chamber 21 is 20 ℃.
Further, in this embodiment, the step of introducing nitrogen gas as desorption gas into the plasma etching reaction chamber 21 further includes: the pressure in the plasma etching reaction chamber 21 is controlled to a first set pressure.
Further, in the present embodiment, a second voltage is applied to the second electrode 26 to excite the nitrogen gas into plasma for releasing the electrostatic adsorption of the wafer 27 and the electrostatic chuck 22.
Further, in this embodiment, the step of reducing the first voltage of the first electrode 221 to a preset voltage further includes: the first voltage on the first electrode 221 is reduced to 0. The manner of decreasing the first voltage to 0 may be a linear decrease or a step decrease.
Compared with the scheme of removing electrostatic charges by introducing argon into the plasma etching reaction chamber in the conventional wafer desorption method, the method has the advantages that nitrogen is selected as desorption gas, the pressure in the plasma etching reaction chamber reaches the first set pressure, then the second voltage is applied to the second electrode, the nitrogen is excited into the plasma to remove the electrostatic charges around the wafer, and the first voltage of the first electrode is gradually reduced to 0, so that the electrostatic adsorption of the wafer and the electrostatic chuck is removed. The molecular weight of the nitrogen is far less than that of the argon, so that the bombardment of desorption gas on the surface of the wafer in the desorption process can be reduced, the nitrogen also has a certain repairing effect on etching damage of the surface of the wafer, and the defects caused by etching in a capacitive coupling plasma radio frequency mode can be overcome.
One embodiment of the present application provides a wafer desorption apparatus in a capacitively coupled plasma rf mode.
Fig. 4 is a schematic diagram of a wafer desorption apparatus in rf mode for capacitively coupled plasma according to the present application. The wafer desorption device in the capacitive coupling plasma radio frequency mode comprises: plasma etches the reaction chamber 41, electrostatic chuck 42, gas vent 44.
The plasma etch reaction chamber 41 provides a process environment for plasma etching and desorption of the wafer 47. In this embodiment, an electrostatic chuck 42 is disposed in the plasma etching reaction chamber 41, the electrostatic chuck 42 includes a first electrode 421, and the wafer 47 is fixed on the surface of the electrostatic chuck 42 by applying a first voltage to the first electrode 421. The first voltage on the first electrode 421 is reduced to a predetermined voltage for releasing the electrostatic attraction between the wafer 47 and the electrostatic chuck 42.
The vent 44 is disposed in the sidewall of the plasma etching reaction chamber 41 and connected to a nitrogen gas source 45. The vent 44 is used for introducing the nitrogen gas into the plasma etching reaction chamber 41 as a desorption gas in the step of desorbing the wafer 47, so as to release the electrostatic adsorption of the wafer 47 and the electrostatic chuck 42.
Further, in the present embodiment, the electrostatic chuck 42 further includes a dielectric layer 422 covering the first electrode 421. The first electrode 421 is disposed inside the dielectric layer 422, and when the first voltage is applied to the first electrode, polarization charges are generated on the surface of the dielectric layer 422, so as to attract and fix the wafer 47. In this embodiment, the first electrode 421 is a single electrode. In other embodiments, the first electrode 421 may be a double electrode. In this embodiment, the material of the dielectric layer 422 is aluminum nitride ceramic. In other embodiments, the material of the dielectric layer 422 may be any one or a combination of aluminum nitride ceramic, aluminum oxide ceramic, polyethylene terephthalate, and polyether ketone.
Further, in the present embodiment, a base 43 is further disposed in the plasma etching reaction chamber 41, and the base 43 is disposed at the bottom of the plasma etching reaction chamber 41 and is used for fixing the electrostatic chuck 42. In the present embodiment, the base 43 and the electrostatic chuck 42 are fixed by an adhesive.
The plasma etching reaction chamber is also provided with a second electrode 46; the second electrode 46 is disposed opposite to the first electrode 421 in the plasma etching reaction chamber 41. In the step of desorbing the wafer 47, the nitrogen gas is excited into plasma by applying a second voltage to the second electrode 46 for releasing the electrostatic adsorption of the wafer 47 and the electrostatic chuck 42.
According to the method, nitrogen is selected as desorption gas, the pressure in the plasma etching reaction cavity reaches first set pressure, second voltage is applied to the second electrode, static charges around the wafer are removed for the plasma by exciting the nitrogen, the first voltage of the first electrode is gradually reduced to 0, and therefore the wafer and the electrostatic adsorption of the electrostatic chuck are removed. The molecular weight of the nitrogen is far less than that of the argon, so that the bombardment of desorption gas on the surface of the wafer in the desorption process can be reduced, the nitrogen also has a certain repairing effect on etching damage of the surface of the wafer, and the defects caused by etching in a capacitive coupling plasma radio frequency mode can be overcome.
It is noted that, in this document, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the phrases "further include a" ... "defined elements do not exclude the presence of additional like elements in the process, method, article, or apparatus that comprises the recited elements.
The embodiments in the present application are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on differences from other embodiments.
The above description is only a preferred embodiment of the present application and is not intended to limit the scope of the present application. It should be noted that, for those skilled in the art, without departing from the principle of the present application, several improvements and modifications can be made, and these improvements and modifications should also be considered as the protection scope of the present application.
Claims (10)
1. A method for desorbing a wafer in a radio frequency mode of a capacitive coupling plasma, comprising the steps of:
providing a plasma etching reaction chamber, wherein an electrostatic chuck is arranged in the plasma etching reaction chamber, the electrostatic chuck comprises a first electrode, and the wafer is fixed on the surface of the electrostatic chuck in an electrostatic adsorption mode by applying a first voltage to the first electrode;
in the step of desorbing the wafer, nitrogen is introduced into the plasma etching reaction chamber to serve as desorption gas, and the first voltage on the first electrode is reduced to a preset voltage, so that the electrostatic adsorption between the wafer and the electrostatic chuck is eliminated.
2. The method of claim 1, wherein the electrostatic chuck further comprises a dielectric layer covering the first electrode, and wherein when the first voltage is applied to the first electrode, a surface of the dielectric layer generates a polarization charge to attract and fix the wafer.
3. The method as claimed in claim 1, wherein a vent is further disposed in the plasma etching reaction chamber, the vent is disposed on a sidewall of the plasma etching reaction chamber and connected to a nitrogen gas source, and the vent is used for introducing the nitrogen gas into the plasma etching reaction chamber as a desorption gas during the step of desorbing the wafer.
4. The method of claim 1, wherein the plasma etching reaction chamber further comprises a second electrode disposed opposite the first electrode, and wherein the step of desorbing the wafer comprises applying a second voltage to the second electrode to excite the nitrogen gas into a plasma for releasing the electrostatic attraction between the wafer and the electrostatic chuck.
5. The method of claim 1, wherein the temperature within the plasma etch reaction chamber during de-clamping of the wafer from the electrostatic chuck is 20 ℃.
6. The method of claim 1, wherein the step of flowing nitrogen gas as a desorption gas into the plasma etch reaction chamber further comprises: and controlling the pressure in the plasma etching reaction chamber to be a first set pressure.
7. The method of claim 1, wherein the step of reducing the first voltage on the first electrode to a preset voltage further comprises: reducing the first voltage on the first electrode to 0.
8. A device for desorbing a wafer in an rf mode using a capacitively coupled plasma, comprising:
a plasma etching reaction chamber;
the electrostatic chuck is arranged in the plasma etching reaction chamber and comprises a first electrode, when a first voltage is applied to the first electrode, the wafer is adsorbed and fixed on the surface of the electrostatic chuck in an electrostatic adsorption mode, and when the first voltage on the first electrode is reduced to a preset voltage, the electrostatic adsorption of the wafer and the electrostatic chuck is released; and
and the air vent is arranged on the side wall of the plasma etching reaction chamber and connected to a nitrogen source, and is used for introducing nitrogen into the plasma etching reaction chamber as desorption gas in the step of desorbing the wafer so as to remove the electrostatic adsorption of the wafer and the electrostatic chuck.
9. The apparatus of claim 8, wherein the electrostatic chuck further comprises a dielectric layer covering the first electrode, and wherein when the first voltage is applied to the first electrode, a surface of the dielectric layer generates a polarization charge to attract and fix the wafer.
10. The apparatus of claim 8, wherein the plasma etching reaction chamber further comprises a second electrode disposed opposite the first electrode, and wherein the step of desorbing the wafer comprises applying a second voltage to the second electrode to excite the nitrogen gas into a plasma for releasing the electrostatic attraction between the wafer and the electrostatic chuck.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117238743A (en) * | 2023-11-10 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117238743A (en) * | 2023-11-10 | 2023-12-15 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
CN117238743B (en) * | 2023-11-10 | 2024-02-09 | 合肥晶合集成电路股份有限公司 | Method for improving annular defect of wafer edge |
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