CN108198785A - A kind of array substrate preparation method, array substrate and display device - Google Patents
A kind of array substrate preparation method, array substrate and display device Download PDFInfo
- Publication number
- CN108198785A CN108198785A CN201810012448.3A CN201810012448A CN108198785A CN 108198785 A CN108198785 A CN 108198785A CN 201810012448 A CN201810012448 A CN 201810012448A CN 108198785 A CN108198785 A CN 108198785A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- mask plate
- passivation layer
- conductive layer
- array substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
Abstract
The present invention provides a kind of array substrate preparation method, array substrate and display devices.In array substrate preparation method provided by the invention, by the first structure on intermediate tone mask plate, the passivation layer for being formed with the first photoresist is exposed, the orthographic projection region of first structure forms via on the passivation layer.And pass through the second structure on intermediate tone mask plate, the conductive layer for being formed with the second photoresist is exposed, the orthographic projection region of the second structure forms public electrode on the electrically conductive.Wherein, the transmitance of halftoning piece is between the transmitance of the first structure and second structure in the intermediate tone mask plate, and the first photoresist and the second photoresist are opposite polarity photoresist.So as to by the photoresist of the same intermediate tone mask plate and two kinds of opposite polarities, complete the preparation to public electrode in passivation layer via hole and conductive layer.And then the mask plate quantity prepared needed for array substrate can be reduced.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of array substrate preparation method, array substrate and display
Device.
Background technology
Increasingly mature with photoelectric display technology, the application field of display device is more and more extensive.Wherein it is based on the service life
The features such as length, light efficiency are high, radiation is low, low in energy consumption, liquid crystal display device gradually becomes instead of traditional radiographic tube display apparatus
The research direction of device product mainstream is shown in recent years.
As conventional process means a kind of in liquid crystal display device preparation process, photoetching process is used to form liquid on substrate
The figure of array substrate and each structural unit of color membrane substrates in crystal device.Wherein, using photoresist as material in photoetching process,
Photoresist is coated on the film for preparing etching, forms the figure of photoresist using mask plate, the figure of the photoresist can be with
Following material film is protected to be not etched in subsequent etching processes, so as to form the figure of each structural unit.
But at least there are following defects for the prior art：Due to each not phase of figure of structural unit each in liquid crystal display device
Together, it and usually needs to be adjusted the figure of each structural unit in the process of development.Therefore, for the mask of the prior art
It for plate, repeatedly prepares and not only causes waste, increase cost payout, the process in addition also resulting in exploitation and making becomes
It is long.Wherein, it in the prior art in the public electrode in preparing passivation layer via hole and conductive layer, just needs different using two
Mask plate could be completed to prepare.
Invention content
The technical problem to be solved in the present invention is to provide a kind of array substrate preparation method, array substrate and display device,
To solve the problems, such as that the mask plate quantity needed for preparation array substrate is excessive.
On the one hand, a kind of array substrate preparation method is provided, method includes：
The first photoresist is formed on the passivation layer；
By the first structure on intermediate tone mask plate, the passivation layer for being formed with the first photoresist is exposed, in institute
The orthographic projection region for stating the first structure on passivation layer forms via；
Conductive layer is formed on the passivation layer for be formed with via；
The second photoresist is formed on the conductive layer, by the second structure on the intermediate tone mask plate, to being formed
The conductive layer for having the second photoresist is exposed, and the orthographic projection region of second structure forms common electrical on the conductive layer
Pole；
Wherein, in the intermediate tone mask plate transmitance of halftoning piece between the transmitance of the first structure and described
Between the transmitance of second structure, first photoresist and second photoresist are opposite polarity photoresist.
Further, the first structure by intermediate tone mask plate, to being formed with the passivation layer of the first photoresist
The step of being exposed, via formed in the orthographic projection region of first structure described on the passivation layer, including：Pass through described half
Tone mask plate is exposed first photoresist；Develop to the first photoresist after exposure, expose described
Orthographic projection region of one structure on the passivation layer；The region of exposure in the passivation layer is etched, forms the via.
Further, it is formed before conductive layer, further included on the passivation layer for be formed with via：Remove remaining first light
Photoresist.
Further, second structure by the intermediate tone mask plate, leads to being formed with the second photoresist
Electric layer is exposed, in the orthographic projection region of the second structure described on the conductive layer the step of formation public electrode, including：It is logical
The intermediate tone mask plate is crossed, second photoresist is exposed；Develop to the second photoresist after exposure, exposure
Go out orthographic projection region of second structure on the conductive layer；The region of exposure is etched in the conductive layer, described in formation
Public electrode.
Further, the region exposed in the conductive layer is etched, forms after the public electrode, further includes：It goes
Except remaining second photoresist.
Further, when first photoresist is positive photoresist, and second photoresist is negative photoresist, institute
First structure is stated as loophole, second structure includes at least one shading strip, and each shading strip is arranged in palisade.
Further, when first photoresist is negative photoresist, and second photoresist is positive photoresist, institute
It is round anti-dazzling screen to state first structure, and second structure includes at least one light transmission strip, and each light transmission strip is arranged in palisade.
On the other hand, a kind of intermediate tone mask plate is additionally provided, including：Halftoning piece；
The halftoning on piece is provided with first structure and the second structure；
The transmitance of the halftoning piece between the first structure transmitance and second structure transmitance it
Between；
The first structure, for preparing via on target object；
Second structure is arranged in palisade.
Another aspect additionally provides a kind of array substrate, is prepared using array substrate preparation method as described above.
In another aspect, a kind of display device is additionally provided, including array substrate as described above.
Compared with prior art, the present invention includes advantages below：
The present invention provides a kind of array substrate preparation method, array substrate and display device, in battle array provided by the invention
In row base plate preparation method, by the first structure on intermediate tone mask plate, the passivation layer for being formed with the first photoresist is carried out
The orthographic projection region formation via of exposure, on the passivation layer first structure.And it is formed on the passivation layer for be formed with via conductive
Layer and form the second photoresist on the electrically conductive, by the second structure on intermediate tone mask plate, to being formed with the second photoetching
The conductive layer of glue is exposed, and the orthographic projection region of the second structure forms public electrode on the electrically conductive.Wherein, which covers
The transmitance of halftoning piece is between the transmitance of the first structure and second structure in diaphragm plate, and the first photoresist and
Two photoresists are opposite polarity photoresist.So as to pass through the photoetching of the same intermediate tone mask plate and two kinds of opposite polarities
Glue completes the preparation to public electrode in passivation layer via hole and conductive layer.And then it can reduce and prepare covering needed for array substrate
Diaphragm plate quantity reduces the cost payout for making mask plate, and can shorten required for liquid crystal display device exploitation and preparing
Time.
Description of the drawings
Fig. 1 is a kind of flow chart of array substrate preparation method provided in an embodiment of the present invention；
Fig. 2 is the flow chart of another array substrate preparation method provided in an embodiment of the present invention；
Fig. 3 is the flow chart of another array substrate preparation method provided in an embodiment of the present invention；
Fig. 4 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
One of journey schematic diagram；
Fig. 5 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
The two of journey schematic diagram；
Fig. 6 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
The three of journey schematic diagram；
Fig. 7 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
The four of journey schematic diagram；
Fig. 8 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
The five of journey schematic diagram；
Fig. 9 is provided in an embodiment of the present invention a kind of to prepare the technique stream of passivation layer via hole and public electrode in array substrate
The six of journey schematic diagram；
Figure 10 is provided in an embodiment of the present invention a kind of to prepare passivation layer via hole and the technique of public electrode in array substrate
The seven of flow diagram；
Figure 11 is passivation layer via hole and the work of public electrode in another preparation array substrate provided in an embodiment of the present invention
One of skill flow diagram；
Figure 12 is passivation layer via hole and the work of public electrode in another preparation array substrate provided in an embodiment of the present invention
The two of skill flow diagram；
Figure 13 is passivation layer via hole and the work of public electrode in another preparation array substrate provided in an embodiment of the present invention
One of skill flow diagram；
Figure 14 is passivation layer via hole and the work of public electrode in another preparation array substrate provided in an embodiment of the present invention
The two of skill flow diagram；
Figure 15 is a kind of structure diagram of intermediate tone mask plate provided in an embodiment of the present invention.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
In the description of the present invention, unless otherwise indicated, " multiple " are meant that two or more；Term " on ",
" under ", "left", "right", " interior ", the orientation of the instructions such as " outer " or position relationship be based on orientation shown in the drawings or position relationship,
It is for only for ease of the description present invention and simplified description rather than instruction or implies that signified machine or element must be with specific
Orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or be integrally connected；It can
To be mechanical connection or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary.For this
For the those of ordinary skill in field, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.
The specific embodiment of the present invention is described in further detail with reference to the accompanying drawings and examples.Following embodiment
For illustrating the present invention, but it is not limited to the scope of the present invention.
With reference to Fig. 1, a kind of flow chart of array substrate preparation method provided in an embodiment of the present invention is shown.Reference Fig. 4-
10, show that a kind of technological process for preparing passivation layer via hole and public electrode in array substrate provided in an embodiment of the present invention is shown
It is intended to.
Step 101, the first photoresist is formed on the passivation layer, by the first structure on intermediate tone mask plate, to being formed
The passivation layer for having the first photoresist is exposed, and the orthographic projection region of first structure forms via on the passivation layer.
Specifically, as shown in figure 4, on source-drain electrode metal layer 402 formed passivation layer 403 after, can be in the passivation layer 403
The first photoresist 411 of upper formation.And pass through the first structure 421 on intermediate tone mask plate 420, to being formed with the first photoresist
411 passivation layer 403 is exposed.Wherein, in the intermediate tone mask plate 420 transmitance of halftoning piece 423 between the first knot
Between the transmitance of the transmitance of structure 421 and the second structure 422, therefore, first structure 421, half in the intermediate tone mask plate 420
The photosensitive depth in orthographic projection region of 423 and second structure 422 of tone piece on the first photoresist 411 is in stepped change.So as to
After can so that first photoresist 411 is developed, different location can retain the first photoresist 411 of different-thickness, you can
So that after the first photoresist 411 of 421 projected position of first structure all is developed to fall, 423 He of halftoning piece can be retained
First photoresist 411 of 422 projected position of the second structure, and then may insure to remove first structure 421 on passivation layer 403 just
View field is exposed and etches away, in passivation layer 403 other regions can be avoided under the protection of the first photoresist 411 by
Etching, i.e., during forms via can to avoid to passivation layer 403 in other regions generate and damage.For example, such as Fig. 5 institutes
Show, after orthographic projection region of the first structure 421 on the first photoresist 411 is exposed, can be removed by way of development
First photoresist 411 in the region, so as to expose orthographic projection region of the first structure 421 on passivation layer 403.It and then can
It is performed etching with the passivation layer 403 to the region, to form via as shown in Figure 6.
Step 102, conductive layer is formed on the passivation layer for be formed with via.
As shown in fig. 7, after preparing via on passivation layer 403, formed on the passivation layer 403 that there can be via in the preparation
Conductive layer 404, the conductive layer 404 can be connected by the via with source-drain electrode metal layer 402.
Step 103, the second photoresist is formed on the electrically conductive, by the second structure on the intermediate tone mask plate, to shape
It is exposed into the conductive layer for having the second photoresist, the orthographic projection region of the second structure forms public electrode on the electrically conductive.
Specifically, as shown in figure 8, after forming conductive layer 404 on the passivation layer 403 for having via is prepared, can be led at this
The second photoresist 412 is formed in electric layer 404.Second photoresist 412 be with 411 opposite polarity photoresist of the first photoresist,
If the first photoresist 411 is positive photoresist, the second photoresist 412 is negative photoresist.If the first photoresist 411 is negativity
Photoresist, then the second photoresist 412 is positive photoresist.So as to be exposed simultaneously using the same intermediate tone mask plate 420
After development, the photoresist of different zones can be removed.Wherein, before being exposed to positive photoresist, which contains molten
Inhibitor is solved, which can be greatly reduced positive photoresist solution rate in developer solution, so as to effectively avoid
Unexposed positive photoresist is dissolved by the developing in developing process so that unexposed positive photoresist is in development work
It remains to be covered on film after skill, resists the erosion of etching liquid in etching technics.After being exposed to positive photoresist, dissolving suppression
Preparation will generate photochemistry reflection in the photoresist, become solubility enhancing agent.The solubility enhancing agent will greatly improve positivity
Photoresist solution rate in developer solution, so that exposed positive photoresist can be quickly molten in developing process
Solution is in developer solution, to remove the positive photoresist covered on film, exposes the film in the region for etching.And to negative
Property photoresist exposure before, solution rate is higher in developer solution for the negative photoresist, to the negative photoresist expose after, warp
Solubility is greatly reduced the negative photoresist of exposure in developer solution, so that exposed negative photoresist is in development work
It can be deposited on film after skill, resist the erosion of etching liquid in etching technics.Unexposed negative photoresist is in development work
It is dissolved in developer solution in skill, to remove the negative photoresist covered on film.I.e. region exposed in positive photoresist exists
It will be removed in developing process, and region unexposed in negative photoresist will be removed in developing process.It therefore, can be with
Opposite polarity first photoresist, 411 and second photoresist 412 is exposed respectively when using same intermediate tone mask plate 420
When, the different zones in the first photoresist 411 and the second photoresist 412 can be removed respectively, so as to form different shapes
Shape.For example, if the first photoresist 411 uses positive photoresist, the second photoresist 412 uses negative photoresist, intermediate tone mask
Be provided with loophole in plate 420, by the loophole in intermediate tone mask plate 420 respectively to the first photoresist 411 and second
After photoresist 412 is exposed, orthographic projection region of the loophole on the first photoresist 411 will in developing process by except
It goes, and orthographic projection region of the loophole on the second photoresist 412 will retain in developing process.
After the second photoresist 412 is formed on conductive layer 404, the second structure on intermediate tone mask plate 420 can be passed through
422, the conductive layer 404 for being formed with the second photoresist 412 is exposed.Due to the second photoresist 412 and the first photoresist 411
Polarity is on the contrary, therefore, if can by the first photoresist 411 of 420 first structure of intermediate tone mask plate, 421 projected position
To be removed by developing process, the first photoresist 411 of 422 projected position of the second structure retains after development, then by this partly
Tone mask plate 420 will allow the second photoresist 412 of 422 projected position of the second structure to be removed by developing process, the
Second photoresist 412 of one structure, 421 projected position retains after development.For example, it as shown in figure 9, is covered by the halftoning
After diaphragm plate 420 is exposed the second photoresist 412,422 projected position of the second structure can be removed by way of development
The second photoresist 412, so as to expose orthographic projection region of second structure 422 on conductive layer 404.It and then can be to this
The conductive layer 404 in region performs etching.In the conductive layer 404 that the region is removed by etching technics, formed as shown in Figure 10
Strip white space, the conductive layer 404 in conductive layer 404 between adjacent two white spaces may be constructed public electrode, and then
It can realize the preparation to public electrode.
In conclusion array substrate preparation method provided in an embodiment of the present invention, passes through on intermediate tone mask plate 420
One structure 421 is exposed the passivation layer 403 for being formed with the first photoresist 411, the first structure 421 on passivation layer 403
Orthographic projection region forms via.And conductive layer 404 and on conductive layer 404 is formed on the passivation layer 403 for being formed with via
The second photoresist 412 is formed, by the second structure 422 on intermediate tone mask plate 420, to being formed with the second photoresist 412
Conductive layer 404 is exposed, and the orthographic projection region of second structure 422 forms public electrode on conductive layer 404.It wherein, should be partly
In tone mask plate 420 transmitance of halftoning piece 423 between the first structure 421 and second structure 422 transmitance it
Between, and the first photoresist 411 and the second photoresist 412 are opposite polarity photoresist.So as to pass through the same halftoning
The photoresist of mask plate 420 and two kind of opposite polarity completes the system to public electrode in 403 via of passivation layer and conductive layer 404
It is standby.And then the mask plate quantity prepared needed for array substrate can be reduced, the cost payout for making mask plate is reduced, and can be with
Shorten and liquid crystal display device is developed and prepared the required time.
The transmitance of 421 and second structure 422 of polarity according to photoresist and first structure is divided to two by following embodiments
Kind situation is discussed in detail respectively.
With reference to Fig. 2, the flow chart of another array substrate preparation method provided in an embodiment of the present invention is shown.With reference to figure
11-12 shows passivation layer via hole and the technique of public electrode in another preparation array substrate provided in an embodiment of the present invention
Flow diagram.In the preparation method, the first photoresist 411 is positive photoresist, and the second photoresist 412 is negative photoresist
When, first structure 4211 is loophole, and the second structure 4221 includes at least one shading strip, and each shading strip is arranged in palisade.
Step 201, the first photoresist is formed on the passivation layer.
Step 202, by intermediate tone mask plate, the first photoresist is exposed.
When the first photoresist 411 is positive photoresist, first structure 4211 is loophole, and the second structure 4221 is shading strip
When, the transmitance of first structure 4211 is more than the transmitance of halftoning piece 423, and the transmitance of halftoning piece 423 is more than the second knot
The transmitance of structure 4221.Therefore, it is radiated at first structure 4211 in the first photoresist 411 for the ultraviolet light of exposure and projects position
The light intensity put, more than the light intensity that ultraviolet light is radiated at 4221 projected position of the second structure in the first photoresist 411, such as Figure 11 institutes
Show, by intermediate tone mask plate 4201, the first photoresist 411 is exposed, the first light of 4211 projected position of first structure
Photoresist 411 can be fully photosensitive so that the first photoresist 411 of 4211 projected position of first structure is molten in developing by not readily dissolving
The resin of liquid is changed into the resin for being relatively easily soluble in developing solution.
Step 203, develop to the first photoresist after exposure, expose the orthographic projection of first structure on the passivation layer
Region.
First photoresist 411 is exposed, make 4211 projected position of first structure the first photoresist 411 be changed into compared with
After being easily soluble in the resin of developing solution, the first photoresist of 4211 projected position of first structure can be removed by developing process
411, so as to expose orthographic projection region of the first structure 4211 on passivation layer 403.First structure is being removed by development
During first photoresist 411 of 4211 projected positions, the first light of 423 and second structure of halftoning piece, 4221 projected position
Photoresist 411 is completely photosensitive, therefore, during development, the of 423 and second structure of halftoning piece, 4221 projected position
One photoresist 411 will be retained.
Step 204, the region exposed in Etch Passivation forms via.
Specifically, the region of exposure in passivation layer 403 can be carried out by way of dry etching or wet etching
Etching to remove the passivation layer 403 in the region, forms via.
Step 205, remaining first photoresist is removed.
After the preparation for completing via, remaining first photoresist can be removed by being ashed modes such as (ashing)
411。
Step 206, conductive layer is formed on the passivation layer for having via is prepared.
After removing except remaining first photoresist 411, conductive layer can be formed on the passivation layer 403 for having via is prepared
404, in case making public electrode.
Step 207, the second photoresist is formed on the electrically conductive.
Step 208, by intermediate tone mask plate, the second photoresist is exposed.
When the second photoresist 412 is negative photoresist, first structure 4211 is loophole, and the second structure 4221 is shading strip
When, as shown in figure 12, by intermediate tone mask plate 4201, the second photoresist 412 is exposed, the second structure 4221 projection position
The second photoresist 412 put is not photosensitive so that the second photoresist 412 of 4221 projected position of the second structure is still more soluble
In the resin of developing solution.And the second photoresist 412 of 423 projected position of first structure 4211 and halftoning piece is after photosensitive,
The resin not readily dissolved in developing solution can be changed into.
Step 209, develop to the second photoresist after exposure, expose the orthographic projection of the second structure on the electrically conductive
Region.
Second photoresist 412 is exposed, make 4221 projected position of the second structure the second photoresist 412 remain compared with
After being easily soluble in the resin of developing solution, the second photoresist of 4221 projected position of the second structure can be removed by developing process
412, so as to expose orthographic projection region of second structure 4221 on conductive layer 404.
Step 210, the region exposed in etching conductive layer forms public electrode.
Specifically, the region of exposure in conductive layer 404 can be carried out by way of dry etching or wet etching
Etching, to remove the conductive layer 404 in the region.Due to each shading strip in palisade arrange, by etch the region formed
Strip white space is arranged in palisade, and the conductive layer 404 in conductive layer 404 between adjacent two white spaces is also arranged in palisade
Row, so as to form public electrode, and then can realize the preparation to public electrode.
Step 211, remaining second photoresist is removed.
After the preparation for completing public electrode, remaining second photoetching can be removed by being ashed modes such as (ashing)
Glue 412.
In conclusion array substrate preparation method provided in an embodiment of the present invention, by will be in intermediate tone mask plate 4201
First structure 4211 be set as loophole, the second structure 4221 is set as shading strip, and using positive photoresist as first
Photoresist 411, using negative photoresist as the second photoresist 412 so that it is right respectively to be exposed using the intermediate tone mask plate 4201
After the passivation layer 403 for being formed with the first photoresist 411 and the conductive layer 404 for being formed with the second photoresist 412 are exposed development,
The region of respective shapes can be exposed in passivation layer 403 and conductive layer 404 respectively, so as to by etching in passivation layer
Via is formed in 403, and public electrode is formed in conductive layer 404.It realizes through same intermediate tone mask plate 4201 and two kind
The photoresist of opposite polarity completes the preparation to public electrode in 403 via of passivation layer and public electrode.
With reference to Fig. 3, the flow chart of another array substrate preparation method provided in an embodiment of the present invention is shown.With reference to figure
13-14 shows passivation layer via hole and the technique of public electrode in another preparation array substrate provided in an embodiment of the present invention
Flow diagram.In the preparation method, when the first photoresist 411 is negative photoresist, the second photoresist 412 is positive-tone photo
During glue, first structure 4212 is round anti-dazzling screen, and the second structure 4222 includes at least one light transmission strip, and each light transmission strip is arranged in palisade
Row.
Step 301, the first photoresist is formed on the passivation layer.
Step 302, by intermediate tone mask plate, the first photoresist is exposed.
When the first photoresist 411 is negative photoresist, first structure 4212 is round anti-dazzling screen, and the second structure 4222 is
During striation, the transmitance of first structure 4212 is less than the transmitance of halftoning piece 423, and the transmitance of halftoning piece 423 is less than the
The transmitance of two structures 4222.Therefore, first structure 4212 in the first photoresist 411 is radiated at for the ultraviolet light of exposure to throw
The light intensity of shadow position less than the light intensity that ultraviolet light is radiated at 4222 projected position of the second structure in the first photoresist 411, is such as schemed
Shown in 13, by intermediate tone mask plate 4202, the first photoresist 411 is exposed, the of 4212 projected position of first structure
One photoresist 411 is not photosensitive so that the first photoresist 411 of 4212 projected position of first structure is still to be relatively easily soluble in development
The resin of solution.And the first photoresist 411 of 423 projected position of the second structure 4222 and halftoning piece is after photosensitive, Ke Yizhuan
Become not readily dissolving the resin in developing solution.
Step 303, develop to the first photoresist after exposure, expose the orthographic projection of first structure on the passivation layer
Region.
First photoresist 411 is exposed, make 4212 projected position of first structure the first photoresist 411 remain compared with
After being easily soluble in the resin of developing solution, the first photoresist of 4212 projected position of first structure can be removed by developing process
411, so as to expose orthographic projection region of the first structure 4212 on passivation layer 403.
Step 304, the region exposed in Etch Passivation forms via.
Specifically, the region of exposure in passivation layer 403 can be carried out by way of dry etching or wet etching
Etching to remove the passivation layer 403 in the region, forms via.
Step 305, remaining first photoresist is removed.
After the preparation for completing via, remaining first photoresist can be removed by being ashed modes such as (ashing)
411。
Step 306, conductive layer is formed on the passivation layer for having via is prepared.
After removing except remaining first photoresist 411, conductive layer can be formed on the passivation layer 403 for having via is prepared
404, in case making public electrode.
Step 307, the second photoresist is formed on the electrically conductive.
Step 308, by intermediate tone mask plate, the second photoresist is exposed.
When the second photoresist 412 is positive photoresist, first structure 4212 is round anti-dazzling screen, and the second structure 4222 is
During striation, as shown in figure 14, by intermediate tone mask plate 4202, the second photoresist 412 is exposed, the second structure 4222 is thrown
Second photoresist 412 of shadow position can be fully photosensitive so that the second photoresist 412 of 4222 projected position of the second structure is not by
The resin for being easily soluble in developing solution is changed into the resin for being relatively easily soluble in developing solution.
Step 309, develop to the second photoresist after exposure, expose the orthographic projection of the second structure on the electrically conductive
Region.
Second photoresist 412 is exposed, make 4222 projected position of the second structure the second photoresist 412 be changed into compared with
After being easily soluble in the resin of developing solution, the second photoresist of 4222 projected position of the second structure can be removed by developing process
412, so as to expose orthographic projection region of second structure 4222 on conductive layer 404.Second structure is being removed by development
During second photoresist 412 of 4222 projected positions, the second light of 4212 projected position of halftoning piece 423 and first structure
Photoresist 412 is completely photosensitive, therefore, during development, the of 4212 projected position of halftoning piece 423 and first structure
Two photoresists 412 will be retained.
Step 310, the region exposed in etching conductive layer forms public electrode.
Specifically, the region of exposure in conductive layer 404 can be carried out by way of dry etching or wet etching
Etching, to remove the conductive layer 404 in the region.Due to each light transmission strip in palisade arrange, by etch the region formed
Strip white space is arranged in palisade, and the conductive layer 404 in conductive layer 404 between adjacent two white spaces is also arranged in palisade
Row, so as to form public electrode, and then can realize the preparation to public electrode.
Step 311, remaining second photoresist is removed.
After the preparation for completing public electrode, remaining second photoetching can be removed by being ashed modes such as (ashing)
Glue 412.
In conclusion array substrate preparation method provided in an embodiment of the present invention, by will be in intermediate tone mask plate 4202
First structure 4212 be provided in round anti-dazzling screen, the second structure 4222 is set as light transmission strip, and using negative photoresist as
First photoresist 411, using positive photoresist as the second photoresist 412 so that using the intermediate tone mask plate 4202 exposure point
The other passivation layer 403 to being formed with the first photoresist 411 and the conductive layer 404 for being formed with the second photoresist 412 are exposed aobvious
Movie queen can expose the region of respective shapes in passivation layer 403 and conductive layer 404 respectively, so as to be existed by etching
Via is formed in passivation layer 403, and public electrode is formed in conductive layer 404.It realizes through same intermediate tone mask plate 4202
With the photoresist of two kinds of opposite polarities, the preparation to public electrode in 403 via of passivation layer and public electrode is completed.
With reference to Figure 15, a kind of intermediate tone mask plate provided in an embodiment of the present invention is shown.The intermediate tone mask plate can be with
Applied to above-mentioned array substrate preparation method.
Specifically, the intermediate tone mask plate includes halftoning piece 423.First structure 421 is provided on the halftoning piece 423
With the second structure 422.The transmitance of the halftoning piece 423 is between the transmitance of first structure 421 and the transmission of the second structure 422
Between rate.The first structure 421 on target object for preparing via, for example, the first structure 421 can be in array substrate
On passivation layer 403 on prepare via.Second structure 422 is arranged in palisade, can be used for preparing public in array substrate
Electrode.In practical applications, first structure 421, the difference of 423 and second structure of halftoning piece, 422 transmitance can be utilized, and
With the use of positive photoresist and negative photoresist, by using the same intermediate tone mask plate, complete to 403 via of passivation layer
With the preparation of public electrode in conductive layer 404.So that the intermediate tone mask plate can be used for different figures in this double-layer films
The preparation of case.The utilization ratio of the intermediate tone mask plate is substantially improved.
In practical applications, which can be set as to loophole, and by the second structure 422 be set as to
A few shading strip.Or the first structure 421 is provided in round anti-dazzling screen, and the second structure 422 is set as at least one
A light transmission strip.
The embodiment of the present invention additionally provides a kind of array substrate, which is prepared using the above method.
In addition, the embodiment of the present invention additionally provides a kind of display device, which includes above-described array base
Plate.Specifically, which can be：Liquid crystal display panel, OLED display panel, Electronic Paper, organic light emitting display panel,
Any production with display function such as mobile phone, tablet computer, television set, display, laptop, Digital Frame, navigator
Product or component.
Each embodiment in this specification is described by the way of progressive, the highlights of each of the examples are with
The difference of other embodiment, just to refer each other for identical similar part between each embodiment.
A kind of array substrate preparation method provided by the present invention, array substrate and display device have been carried out in detail above
It introduces, specific case used herein is expounded the principle of the present invention and embodiment, the explanation of above example
It is merely used to help understand the method and its core concept of the present invention；Meanwhile for those of ordinary skill in the art, according to this
The thought of invention, there will be changes in specific embodiments and applications, in conclusion the content of the present specification should
It is interpreted as limitation of the present invention.
Claims (10)
1. a kind of array substrate preparation method, which is characterized in that the method includes：
The first photoresist is formed on the passivation layer；
By the first structure on intermediate tone mask plate, the passivation layer for being formed with the first photoresist is exposed, described blunt
The orthographic projection region for changing the first structure on layer forms via；
Conductive layer is formed on the passivation layer for be formed with via；
The second photoresist is formed on the conductive layer, by the second structure on the intermediate tone mask plate, to being formed with
The conductive layer of two photoresists is exposed, and the orthographic projection region of second structure forms public electrode on the conductive layer；
Wherein, in the intermediate tone mask plate transmitance of halftoning piece between the transmitance of the first structure and described second
Between the transmitance of structure, first photoresist and second photoresist are opposite polarity photoresist.
2. preparation method according to claim 1, which is characterized in that first knot by intermediate tone mask plate
Structure is exposed the passivation layer for being formed with the first photoresist, the orthographic projection region of the first structure on the passivation layer
The step of forming via, including：
By the intermediate tone mask plate, first photoresist is exposed；
Develop to the first photoresist after exposure, expose forward projection region of the first structure on the passivation layer
Domain；
The region of exposure in the passivation layer is etched, forms the via.
3. preparation method according to claim 2, which is characterized in that conductive layer is formed on the passivation layer for be formed with via
Before, it further includes：
Remove remaining first photoresist.
4. preparation method according to claim 1, which is characterized in that it is described by the intermediate tone mask plate second
Structure is exposed the conductive layer for being formed with the second photoresist, the forward projection region of second structure on the conductive layer
Domain forms the step of public electrode, including：
By the intermediate tone mask plate, second photoresist is exposed；
Develop to the second photoresist after exposure, expose forward projection region of second structure on the conductive layer
Domain；
The region of exposure in the conductive layer is etched, forms the public electrode.
5. preparation method according to claim 4, which is characterized in that the region of exposure, shape in the conductive layer is etched
Into after the public electrode, further include：
Remove remaining second photoresist.
6. preparation method according to any one of claim 1 to 5, which is characterized in that
When first photoresist is positive photoresist, and second photoresist is negative photoresist, the first structure is
Loophole, second structure include at least one shading strip, and each shading strip is arranged in palisade.
7. preparation method according to any one of claim 1 to 5, which is characterized in that
When first photoresist is negative photoresist, and second photoresist is positive photoresist, the first structure is
Round anti-dazzling screen, second structure include at least one light transmission strip, and each light transmission strip is arranged in palisade.
8. a kind of intermediate tone mask plate, which is characterized in that including：Halftoning piece；
The halftoning on piece is provided with first structure and the second structure；
The transmitance of the halftoning piece is between the transmitance of the first structure and the transmitance of second structure；
The first structure, for preparing via on target object；
Second structure is arranged in palisade.
9. a kind of array substrate, which is characterized in that using the array substrate preparation method as described in any one of claim 1-7
It prepares.
10. a kind of display device, which is characterized in that including array substrate as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810012448.3A CN108198785A (en) | 2018-01-05 | 2018-01-05 | A kind of array substrate preparation method, array substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810012448.3A CN108198785A (en) | 2018-01-05 | 2018-01-05 | A kind of array substrate preparation method, array substrate and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108198785A true CN108198785A (en) | 2018-06-22 |
Family
ID=62588028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810012448.3A Pending CN108198785A (en) | 2018-01-05 | 2018-01-05 | A kind of array substrate preparation method, array substrate and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108198785A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109900381A (en) * | 2019-03-20 | 2019-06-18 | 京东方科技集团股份有限公司 | Dual sampling device and its manufacturing method, double parameter sensing systems |
| CN110739317A (en) * | 2019-11-26 | 2020-01-31 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| CN113419384A (en) * | 2021-06-17 | 2021-09-21 | 福州京东方光电科技有限公司 | Array substrate, preparation method thereof and display panel |
| CN114227812A (en) * | 2021-10-26 | 2022-03-25 | 深圳市优凯特粘胶制品有限公司 | Preparation process of anti-dazzling screen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189578A1 (en) * | 2001-08-06 | 2005-09-01 | Samsung Sdi Co., Ltd. | Flat panel display with high capacitance and method of manufacturing the same |
| CN104635419A (en) * | 2015-03-11 | 2015-05-20 | 京东方科技集团股份有限公司 | Array substrate as well as preparation method of display panel, and mask plate |
| US20160197107A1 (en) * | 2013-12-02 | 2016-07-07 | Lg Display Co., Ltd. | Thin film transistor substrate having metal oxide semiconductor and manufacturing the same |
-
2018
- 2018-01-05 CN CN201810012448.3A patent/CN108198785A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189578A1 (en) * | 2001-08-06 | 2005-09-01 | Samsung Sdi Co., Ltd. | Flat panel display with high capacitance and method of manufacturing the same |
| US20160197107A1 (en) * | 2013-12-02 | 2016-07-07 | Lg Display Co., Ltd. | Thin film transistor substrate having metal oxide semiconductor and manufacturing the same |
| CN104635419A (en) * | 2015-03-11 | 2015-05-20 | 京东方科技集团股份有限公司 | Array substrate as well as preparation method of display panel, and mask plate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109900381A (en) * | 2019-03-20 | 2019-06-18 | 京东方科技集团股份有限公司 | Dual sampling device and its manufacturing method, double parameter sensing systems |
| CN110739317A (en) * | 2019-11-26 | 2020-01-31 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| CN113419384A (en) * | 2021-06-17 | 2021-09-21 | 福州京东方光电科技有限公司 | Array substrate, preparation method thereof and display panel |
| CN114227812A (en) * | 2021-10-26 | 2022-03-25 | 深圳市优凯特粘胶制品有限公司 | Preparation process of anti-dazzling screen |
| CN114227812B (en) * | 2021-10-26 | 2024-01-26 | 深圳市优凯特粘胶制品有限公司 | Preparation process of shading sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108198785A (en) | A kind of array substrate preparation method, array substrate and display device | |
| WO2016107039A1 (en) | Array substrate, manufacturing method therefor, and display device | |
| CN104635416B (en) | A kind of manufacturing method of mask plate and array substrate | |
| US9626017B2 (en) | Touch panel and manufacturing method thereof, display device | |
| WO2015100870A1 (en) | Array substrate, manufacturing method therefor, display device and electronic product | |
| CN106898616B (en) | The production method and TFT substrate of TFT substrate | |
| US10288928B2 (en) | Photomask and method of manufacturing color filter substrate | |
| WO2013170608A1 (en) | Mask plate and method for manufacturing array substrate | |
| WO2019179339A1 (en) | Array substrate and manufacturing method therefor, display panel and display device | |
| WO2023202584A1 (en) | Display panel, method for manufacturing display panel, and display apparatus | |
| CN104992952A (en) | Array substrate and preparation method therefor | |
| CN108269736B (en) | Method for patterning electrode layer by photoresist stripping | |
| WO2019214108A1 (en) | Method for manufacturing display panel and display panel | |
| JP2008244478A (en) | Photomask and method for manufacturing image sensor using the same | |
| WO2021031368A1 (en) | Display panel and preparation method therefor, and terminal | |
| JP2021524047A (en) | Array board, display panel and display device | |
| CN111061079A (en) | Array substrate, preparation method thereof and display device | |
| KR100907898B1 (en) | Semiconductor device manufacturing method | |
| JP2020519958A (en) | Photomask structure and array substrate manufacturing method | |
| CN106933054B (en) | Graphical process method | |
| KR102423679B1 (en) | Method of manufacturing display device | |
| US10859877B2 (en) | Display panel, manufacturing method therof, and display device | |
| CN105260052A (en) | Cover plate and manufacturing method therefor as well as display apparatus and manufacturing method therefor | |
| CN106200258B (en) | A kind of manufacturing method of mask plate, method and circuit board that it is exposed | |
| TWI600958B (en) | Electrophoretic display panel and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180622 |
|
| RJ01 | Rejection of invention patent application after publication |