CN109900381A

CN109900381A - Dual sampling device and its manufacturing method, double parameter sensing systems

Info

Publication number: CN109900381A
Application number: CN201910211494.0A
Authority: CN
Inventors: 付剑波; 吴海龙; 但艺; 毛大龙; 周焱; 朱海鹏; 韩燕淋; 冉敏; 梁鹏
Original assignee: BOE Technology Group Co Ltd; Chongqing BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Chongqing BOE Optoelectronics Technology Co Ltd
Priority date: 2019-03-20
Filing date: 2019-03-20
Publication date: 2019-06-18
Anticipated expiration: 2039-03-20
Also published as: CN109900381B

Abstract

This application discloses a kind of dual sampling device and its manufacturing methods, double parameter sensing systems, belong to sensor technical field.Dual sampling device includes: at least one sensory package of flexible substrates and setting on a flexible substrate；Sensory package includes the first optical waveguide, optical grating construction and thin film transistor (TFT), and side of the thin film transistor (TFT) far from flexible substrates is arranged in optical grating construction, and the light emission side of the first optical waveguide is arranged in optical grating construction；Thin film transistor (TFT) is configured as output source-drain current, to determine the output electric current of dual sampling device according to source-drain current, according to the variable quantity of the variable quantity temperature of output electric current；Optical grating construction, which is configured as being conducted according to the first optical waveguide to the light of optical grating construction, generates reflected light, according to the variable quantity of the variable quantity of the characteristic wavelength of reflected light and the variable quantity identified sign of temperature.The application can be improved the accuracy of the measurement of dual sampling device.The application is used for the measurement of temperature and stress.

Description

Dual sampling device and its manufacturing method, double parameter sensing systems

Technical field

This application involves sensor technical field, in particular to a kind of dual sampling device and its manufacturing method, double parameters Sensing system.

Background technique

Dual sampling device refers to measure the sensor of the variable quantity of two kinds of parameters.Temperature-Stress sensor is A kind of typical dual sampling device, can measure the variable quantity of two kinds of parameters of temperature and stress, be widely used in bridge, tunnel The fields such as road, dam and machinery.

Currently, Temperature-Stress sensor includes the fiber-optic grating sensor being arranged in series and Fabry-perot optical fiber cavity sensor, light The characteristic wavelength of the emergent light of fiber grating sensor can change with the variation of temperature or stress, Fabry-perot optical fiber cavity sensor Chamber length can change with the variation of temperature or stress, and the variation of the chamber length of Fabry-perot optical fiber cavity sensor can cause Fiber Optic Sensor The variation of the interference spectrum of the emergent light of amber cavity sensor.In the change using the Temperature-Stress sensor measures temperature and stress When change amount, so that light is injected Temperature-Stress sensor by fiber-optic grating sensor, pass sequentially through fiber-optic grating sensor and light Nanofarads amber cavity sensor, and via Fabry-perot optical fiber cavity sensor reflection after, by fiber-optic grating sensor from Temperature-Stress sense Device projects, and is then analyzed by emergent light of the spectroanalysis instrument to Temperature-Stress sensor, obtains the feature of the emergent light Wavelength and interference spectrum, according to the variation of the characteristic wavelength of the emergent light and the variable quantity and stress of interference spectrum temperature Amount.

But since the emergent light of Temperature-Stress sensor is sensed by fiber-optic grating sensor and Fabry-perot optical fiber chamber Device is projected from Temperature-Stress sensor, thus fiber-optic grating sensor and Fabry-perot optical fiber cavity sensor there are cross sensitivity ( It is that fiber-optic grating sensor and Fabry-perot optical fiber cavity sensor can interfere with each other) the problem of, cause the Temperature-Stress sensor to be surveyed The accuracy of amount is lower.

Summary of the invention

This application provides a kind of dual sampling device and its manufacturing method, double parameter sensing systems, double ginsengs are enabled to The process of the variable quantity of the variable quantity and stress of quantity sensor measurement temperature will not interact, and improve the survey of dual sampling device The accuracy of amount.The technical solution of the application is as follows:

In a first aspect, providing a kind of dual sampling device, the dual sampling device includes:

Flexible substrates and at least one sensory package being arranged in the flexible substrates；

The sensory package includes the first optical waveguide, optical grating construction and thin film transistor (TFT), and the optical grating construction is arranged in institute Side of the thin film transistor (TFT) far from the flexible substrates is stated, the light emission side of first optical waveguide is arranged in the optical grating construction；

The thin film transistor (TFT) is configured as output source-drain current, to determine that double parameters pass according to the source-drain current The output electric current of sensor, according to the variable quantity of the variable quantity temperature of the output electric current；

First optical waveguide is configured as will inject into the light conduction of first optical waveguide to the optical grating construction, institute It states optical grating construction to be configured as generating reflected light according to the light of conduction to the optical grating construction, according to the spy of the reflected light Levy the variable quantity of the variable quantity of wavelength and the variable quantity identified sign of the temperature.

Optionally, the sensory package further include: the second optical waveguide, second optical waveguide are arranged in the optical grating construction Side far from first optical waveguide；

Second optical waveguide is configured as that the light conduction of second optical waveguide will be injected by the optical grating construction The sensory package out.

Optionally, the sensory package includes multiple thin film transistor (TFT)s along first direction array arrangement, the light Grid structure includes that multiple gratings strips, each gratings strips are arranged corresponding correspondingly with multiple thin film transistor (TFT)s Side of the thin film transistor (TFT) far from the flexible substrates, the light conduction orientation of the first direction and first optical waveguide In parallel.

Optionally, the optical grating construction further include: the filling between first optical waveguide and the first gratings strips is set The packing between second optical waveguide and the second gratings strips is arranged in item, and every two adjacent gratings strips are arranged in Between packing.

Optionally, the sensory package further include: be arranged between the flexible substrates and first optical waveguide One support construction, and the second support construction being arranged between the flexible substrates and second optical waveguide；

First optical waveguide, second optical waveguide and the setting of the multiple gratings strips same layer, and first light Waveguide, second optical waveguide and the multiple gratings strips are in the same plane.

Optionally, the dual sampling device includes multiple sensory packages, and multiple sensory packages are along second party To array arrangement, the second direction is vertical with the optical propagation direction of any sensory package.

Optionally, the dual sampling device further include: one of the sensory package far from the flexible substrates is set The light shield layer in face.

Second aspect provides a kind of manufacturing method of dual sampling device, which comprises

One flexible substrates are provided；

At least one sensory package is formed in the flexible substrates, the sensory package includes the first optical waveguide, grating Structure and thin film transistor (TFT), side of the thin film transistor (TFT) far from the flexible substrates is arranged in the optical grating construction, described The light emission side of first optical waveguide is arranged in optical grating construction；

Wherein, the thin film transistor (TFT) is configured as output source-drain current, described double to be determined according to the source-drain current The output electric current of parametrical sense device, according to the variable quantity of the variable quantity temperature of the output electric current；

Optionally, sensory package is formed in the flexible substrates, comprising:

Form tft layer in the flexible substrates, the tft layer includes the first support construction, the Two support constructions and multiple thin film transistor (TFT)s along first direction array arrangement；

Optical transport graph layer, the optical transport graph layer are formed in the flexible substrates for being formed with the tft layer The first optical waveguide including being located at the side of first support construction far from the flexible substrates is located at the second support knot Second optical waveguide of side of the structure far from the flexible substrates, and it is located at multiple thin film transistor (TFT)s one by one far from described soft Multiple gratings strips of the side of property substrate；

Filled layer is formed in the flexible substrates for being formed with the optical transport graph layer, the filled layer includes being arranged in institute The packing between the first optical waveguide and the first gratings strips is stated, filling out between second optical waveguide and the second gratings strips is set Item is filled, and the packing being arranged between every two adjacent gratings strips；

Wherein, the light emission side of first optical waveguide is arranged in the optical grating construction, and second optical waveguide is arranged in institute State side of the optical grating construction far from first optical waveguide.

Optionally, the method also includes: the sensory package far from the flexible substrates one side formed light shield layer.

The third aspect, provides a kind of double parameter sensing systems, and double parameter sensing systems include:

Infrared light supply, spectroanalysis instrument, at least one current detecting unit and at least one dual sampling device, it is described Dual sampling device is dual sampling device described in any optional way of first aspect or first aspect, it is described at least one Current detecting unit and at least one described dual sampling device correspond, each current detecting unit and corresponding institute Each thin film transistor (TFT) connection of dual sampling device is stated, the infrared light supply and the spectroanalysis instrument are arranged at institute State the side of first optical waveguide far from the optical grating construction of dual sampling device；

The infrared light supply is configured as emitting infrared light to first optical waveguide；

The thin film transistor (TFT) that the current detecting unit is configured as detecting the corresponding dual sampling device is defeated Source-drain current out obtains the output electric current of the dual sampling device, to determine temperature according to the variable quantity of the output electric current The variable quantity of degree；

The spectroanalysis instrument is configured as being handled to obtain to the reflected light that the optical grating construction generates described The characteristic wavelength of reflected light, according to the variable quantity identified sign of the variable quantity of the characteristic wavelength of the reflected light and the temperature Variable quantity.

Optionally, double parameter sensing systems further include: control equipment, the spectroanalysis instrument and it is described at least one Current detecting unit is connect with the control equipment, and the control equipment is configured as:

The output electric current of at least one current detecting unit is extracted, each dual sampling device is obtained Output electric current, according to each dual sampling device output electric current variable quantity temperature variable quantity, Mei Gesuo The output electric current for stating dual sampling device is the source and drain electricity of multiple thin film transistor (TFT) outputs in the dual sampling device The sum of stream；

The characteristic wavelength handled the spectroanalysis instrument extracts, and obtains each dual sampling device pair The characteristic wavelength answered, according to the variable quantity and the dual sampling device of the corresponding characteristic wavelength of each dual sampling device Temperature variable quantity identified sign variable quantity, the corresponding characteristic wavelength of the dual sampling device is equal to double parameters and passes The characteristic wavelength for the reflected light that the optical grating construction in sensor generates.

Technical solution provided by the present application has the benefit that

Dual sampling device provided by the present application and its manufacturing method, double parameter sensing systems, the dual sampling device packet At least one sensory package is included, which includes the first optical waveguide, optical grating construction and thin film transistor (TFT), at the same time to temperature When measuring with the variable quantity of two kinds of parameters of stress, dual sampling device can be determined according to the source-drain current of thin film transistor (TFT) Output electric current, according to the dual sampling device output electric current variable quantity temperature variable quantity, according to pass through first Optical waveguide conducts the variable quantity of the characteristic wavelength of the reflected light to the light generation of optical grating construction and the variable quantity determination of temperature is answered The variable quantity of power.Since the variable quantity of the source-drain current of thin film transistor (TFT) is only related to the variable quantity of temperature, double parameters The process of the variable quantity of the variable quantity and stress of sensor measures temperature will not interact, the measurement of the dual sampling device Accuracy is higher.

It should be understood that the above general description and the following detailed description are merely exemplary, this can not be limited Application.

Detailed description of the invention

In order to illustrate more clearly of embodiments herein, attached drawing needed in embodiment description will be made below Simply introduce, it should be apparent that, the drawings in the following description are only some examples of the present application, common for this field For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.

Fig. 1 is a kind of structural schematic diagram of dual sampling device provided by the embodiments of the present application；

Fig. 2 is the structural schematic diagram of another dual sampling device provided by the embodiments of the present application；

Fig. 3 is the structural schematic diagram of another dual sampling device provided by the embodiments of the present application；

Fig. 4 is a kind of front view of dual sampling device provided by the embodiments of the present application；

Fig. 5 is the source-drain current of a-si TFT provided by the embodiments of the present application a kind of and the relational graph of temperature；

Fig. 6 is the source-drain current of Oxide TFT provided by the embodiments of the present application a kind of and the relational graph of temperature；

Fig. 7 is the source-drain current of LTPS TFT provided by the embodiments of the present application a kind of and the relational graph of temperature；

Fig. 8 is a kind of method flow diagram of the manufacturing method of dual sampling device provided by the embodiments of the present application；

Fig. 9 is the method flow diagram of the manufacturing method of another dual sampling device provided by the embodiments of the present application；

Figure 10 is the schematic diagram after a kind of TFT layer of formation on a flexible substrate provided by the embodiments of the present application；

Figure 11 is a kind of formation optical transport graph layer in the flexible substrates for be formed with TFT layer provided by the embodiments of the present application Schematic diagram afterwards；

Figure 12 is a kind of structural schematic diagram of double parameter sensing systems provided by the embodiments of the present application；

Figure 13 is the enlarged drawing of the part-structure of double parameter sensing systems shown in Figure 12.

The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application Example, and together with specification it is used to explain the principle of the application.

Specific embodiment

In order to keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with attached drawing to the application make into It is described in detail to one step, it is clear that described embodiment is only the application some embodiments, rather than whole implementation Example.Based on the embodiment in the application, obtained by those of ordinary skill in the art without making creative efforts All other embodiment, shall fall in the protection scope of this application.

Temperature-Stress sensor is a kind of typical dual sampling device, can measure two kinds of parameters of temperature and stress Variable quantity, be widely used in the fields such as bridge, tunnel, dam and machinery.Currently, common Temperature-Stress sensor packet Include following two:

The first Temperature-Stress sensor includes relatively independent and integrally disposed temperature sensor and strain gauge, Temperature sensor is used to measure the variable quantity of temperature, and strain gauge is used to measure the variable quantity of stress.But due to this temperature Degree-strain gauge is made of relatively independent sensor, and manufacturing cost is higher, and when being applied to distributed sensing system Effect is poor.

Second of Temperature-Stress sensor includes the fiber-optic grating sensor being arranged in series and Fabry-perot optical fiber cavity sensor, Fiber-optic grating sensor and Fabry-perot optical fiber cavity sensor can measure the variable quantity of temperature and the variable quantity of stress, but the temperature There is cross sensitivity in degree-strain gauge, the accuracy of measurement is lower.

The embodiment of the present application provides a kind of dual sampling device and its manufacturing method, double parameter sensing systems, double parameters Sensor includes the first optical waveguide, optical grating construction and thin film transistor (TFT) (English: Thin Film Transistor；Referred to as: TFT), the output electric current that dual sampling device can be determined according to the source-drain current of TFT, according to the output of the dual sampling device The variable quantity of the variable quantity temperature of electric current is conducted according to by the first optical waveguide to the reflection of the light generation of optical grating construction The variable quantity of the variable quantity identified sign of the variable quantity and temperature of the characteristic wavelength of light.Due to the variable quantity of the source-drain current of TFT (that is to say that the output electric current of dual sampling device is only related with the variable quantity of temperature) only related to the variable quantity of temperature, therefore, The process of the variable quantity of the variable quantity and stress of dual sampling device measurement temperature will not interact, the dual sampling device Measurement accuracy it is higher.

Referring to FIG. 1, it illustrates a kind of structural schematic diagram of dual sampling device 1 provided by the embodiments of the present application, it should Dual sampling device 1 includes: flexible substrates 11 and at least one sensory package 12 being arranged in flexible substrates 11 (in Fig. 1 Only show 1).

Sensory package 12 includes the first optical waveguide 121, optical grating construction 122 and TFT 123, and optical grating construction 122 is arranged in TFT 123 sides far from flexible substrates 11, and optical grating construction 122 is arranged in the light emission side of the first optical waveguide 121 and (does not mark in Fig. 1 Out).

Wherein, TFT 123 is configured as output source-drain current, to determine the dual sampling device 1 according to source-drain current Electric current is exported, according to the variable quantity of the variable quantity temperature of the output electric current of the dual sampling device 1, the TFT 123 output Source-drain current can be that the drain electrode of TFT 123, and the electric current exported from the drain electrode are transmitted to from the source electrode of TFT 123；First The light a that optical waveguide 121 is configured as will inject into the first optical waveguide 121 is conducted to optical grating construction 122, and optical grating construction 122 is matched Be set to and reflected light b generated according to the light a of conduction to optical grating construction 122, with according to the variable quantity of the characteristic wavelength of reflected light b and The variable quantity of the variable quantity identified sign of temperature.

In conclusion dual sampling device provided by the embodiments of the present application, which includes at least one biography Feel component, which includes the first optical waveguide, optical grating construction and thin film transistor (TFT), at the same time to two seed ginseng of temperature and stress When the variable quantity of amount measures, the output electric current of dual sampling device can be determined according to the source-drain current of thin film transistor (TFT), According to the dual sampling device output electric current variable quantity temperature variable quantity, according to by the first optical waveguide conduct to The variable quantity of the variable quantity identified sign of the variable quantity and temperature of the characteristic wavelength for the reflected light that the light of optical grating construction generates.By It is only related to the variable quantity of temperature in the variable quantity of the source-drain current of thin film transistor (TFT), therefore, dual sampling device measurement temperature The process of the variable quantity of the variable quantity and stress of degree will not interact, and the accuracy of the measurement of the dual sampling device is higher.

Wherein, the light for injecting dual sampling device 1 can be infrared light, that is to say, light a and light b can be with For infrared light.

Further, referring to FIG. 2, it illustrates the knots of another dual sampling device 1 provided by the embodiments of the present application Structure schematic diagram, on the basis of Fig. 1, the sensory package 12 further include: the second optical waveguide 124, the second optical waveguide 124 are arranged in light Side of the grid structure 122 far from the first optical waveguide 121.Second optical waveguide 124 is configured as to inject by optical grating construction 122 The light a1 of second optical waveguide 124 transfers out sensory package 12.

It should be noted that if being not provided with the second optical waveguide 124, optical grating construction 122 far from the first optical waveguide 121 one Face and extraneous interface are air interface, are transmitted to the air interface by the first optical waveguide 121 and optical grating construction 122 Light can occur at the air interface reflection generate reflected light, the reflected light will affect optical grating construction 122 generation it is anti- The characteristic wavelength of light is penetrated, to influence the measurement accuracy of dual sampling device 1.The embodiment of the present application passes through the second light wave of setting 124 are led, so that one side of the optical grating construction 122 far from the first optical waveguide 121 is waveguide interface, the waveguide with extraneous interface Interface has preferable light-transfer characteristic, therefore is transmitted to waveguide boundary by the first optical waveguide 121 and optical grating construction 122 The light a1 in face will not reflect at the waveguide interface, improve the accuracy of the measurement of dual sampling device 1.

With continued reference to FIG. 2, the sensory package 12 includes multiple TFT 123 along first direction x array arrangement (in Fig. 2 Show 5), optical grating construction 122 includes and the one-to-one multiple gratings strips 1221 of multiple TFT 123, each gratings strips 1221 are arranged in corresponding side of the TFT 123 far from flexible substrates 11, in other words for, for corresponding TFT 123 and light Grizzly bar 1221, the TFT 123 and the gratings strips 1221 are superimposed along the direction far from flexible substrates 11, wherein multiple 123 structures of TFT At tft array, therefore, each sensory package 12 includes a tft array.First direction x and the light of the first optical waveguide 121 pass It is parallel to lead direction (being not shown in Fig. 2).

Further, as shown in Fig. 2, the optical grating construction 122 further include: be arranged in the first optical waveguide 121 and the first grating The packing 1222 between the second optical waveguide 124 and the second gratings strips is arranged in packing 1222 between item, and setting exists Packing 1222 between per two adjacent gratings strips 1221.Wherein, the first gratings strips refer in multiple gratings strips 1221, The nearest gratings strips of distance the first optical waveguide 121, the second gratings strips refer in multiple gratings strips 1221, the second optical waveguide of distance 124 nearest gratings strips.

Optionally, the first optical waveguide 121, the second optical waveguide 124 are identical with the material of 1221 this three of gratings strips, gratings strips 1221 refractive index is different from the refractive index of packing 1222, so that gratings strips 1221 and packing 1222 are capable of forming grating Structure 122.Illustratively, the material of 1221 this three of the first optical waveguide 121, the second optical waveguide 124 and gratings strips all can be SiN_X(Chinese: silicon nitride), SiOx (Chinese: silica), Al₂O₃(Chinese: aluminium oxide) or SiOxNx (Chinese: silicon oxynitride) Etc. inorganic material, the material of packing 1222 can be the transparent material different from the refractive index of 1221 material of gratings strips, for example, The material of the packing 1222 can be SiO₂(Chinese: silica).

Further, with continued reference to FIG. 2, the sensory package 12 further include: be arranged in flexible substrates 11 and the first light wave The first support construction 125 between 121 is led, and the second support being arranged between flexible substrates 11 and the second optical waveguide 124 Structure 126.First optical waveguide 121, the second optical waveguide 124 and the setting of 1221 same layer of multiple gratings strips, and the first optical waveguide 121, the second optical waveguide 124 and multiple gratings strips 1221 are in the same plane.Optionally, the first support construction 125, second Support construction 126 and this three of TFT 123 manufacture simultaneously and height is equal.Wherein, the height is referred to perpendicular to flexibility Size on the direction of the plate face of substrate 11, for example, the height of the first support construction 125 refers to that the first support construction 125 exists Perpendicular to the size on the direction of the plate face of flexible substrates 11.

Optionally, the TFT 123 may include along set gradually far from 11 direction of flexible substrates grid, gate insulation layer, Active layer, interlayer dielectric layer and source-drain electrode layer (being not shown in Fig. 1 and Fig. 2), source-drain electrode layer include source electrode and drain electrode, source electrode and Drain electrode is overlapped with active layer respectively, and the first support construction 125 may include and grid, gate insulation layer, active layer, interlayer dielectric layer With the one-to-one multiple support film layers (being not shown in Fig. 1 and Fig. 2) of source-drain electrode layer, multiple support film layer is along far from flexible The direction of substrate 11 is sequentially overlapped, and similarly, the second support construction 126 may include and grid, gate insulation layer, active layer, interlayer Dielectric layer and the one-to-one multiple support film layers (being not shown in Fig. 1 and Fig. 2) of source-drain electrode layer, multiple support film layer is along remote Direction from flexible substrates 11 is sequentially overlapped.Wherein, TFT 123 can be amorphous silicon (English: Amorphous silicon；Letter Claim: a-si) TFT, oxide (English: Oxide) TFT or low temperature polycrystalline silicon (English: Low Temperature Poly- silicon；Referred to as: LTPS) TFT, that is to say, active layer can be a-si active layer, oxide active layer or LTPS active layer.

Further, referring to FIG. 3, it illustrates the knots of another dual sampling device 1 provided by the embodiments of the present application Structure schematic diagram, on the basis of Fig. 2, which further includes that sensory package 12 is arranged in far from flexible substrates 11 Light shield layer 13 on one side, the light shield layer 13 can block TFT 123, and ambient is avoided to expose to TFT 123 to TFT 123 source-drain current has an impact, to improve the accuracy of dual sampling device 1.

Optionally, as shown in Figure 1 to Figure 3, in the embodiment of the present application, the cycle length of optical grating construction 122 is L, the light The cycle length L of grid structure 122 refers to the width an of gratings strips and the sum of the width of a packing.Wherein, gratings strips Width refer to size of the gratings strips in a first direction on x, the width of packing refers to packing in a first direction on x Size.

Illustratively, referring to FIG. 4, it illustrates a kind of front view of dual sampling device 1 provided by the embodiments of the present application, The dual sampling device 1 include multiple sensory packages 12 (4 are shown in Fig. 4), y gusts in a second direction of multiple sensory packages 12 Column arrangement, second direction y is vertical with optical propagation direction (being not shown in Fig. 4) of any sensory package 12, any sensing group The optical propagation direction of part 12 is parallel with first direction x.Wherein, the quantity of the sensitivity of dual sampling device 1 and sensory package 12 It is directly proportional, therefore the multiple sensory packages 12 of setting can increase the sensitivity of dual sampling device 1.In practical application, Ke Yigen According to the sensitivity requirement of dual sampling device 1, the quantity of sensory package 12 is determined.

Dual sampling device 1 provided by the embodiments of the present application can be with the variation of the variable quantity of independent measurement temperature and stress Amount, can also measure the variable quantity of temperature and the variable quantity of stress simultaneously.Below with reference to Fig. 2, with the variation of independent measurement temperature The variable quantity of amount, independent measurement stress, and the variable quantity of temperature and three kinds of scenes of variable quantity of stress are measured simultaneously to this Shen Please the principle of dual sampling device that provides of embodiment be illustrated:

The scene of the variable quantity of scene one, independent measurement temperature.

1, by measuring the variable quantity of the characteristic wavelength of the reflected light of dual sampling device 1, the variable quantity of temperature is measured.

As shown in Fig. 2, light a indicates that the light for injecting the first optical waveguide 121 of sensory package 12 (that is to say double parameters The incident light of sensor 1), the reflected light that light b indicates that the optical grating construction 122 of sensory package 12 generates (that is to say double parameters The reflected light of sensor 1), according to grating type optical waveguide principle, when injecting optical grating construction 122 in broadband light, light Grid structure 122 can generate reflected light, and the characteristic wavelength λ of reflected light is the corresponding wavelength of wave crest of the reflected light, λ=2nL, n table Show that the effective refractive index of optical grating construction 122, L indicate the cycle length of optical grating construction 122.

When the temperature varies, the effective refractive index n of optical grating construction 122 changes, due to thermal expansion effects grating The cycle length L of structure 122 can also change, so that the characteristic wavelength λ of the reflected light of optical grating construction 122 (that is to say The characteristic wavelength of the reflected light of sensory package 12) change, then the reflected light of the optical grating construction 122 characteristic wavelength λ (namely The characteristic wavelength of the reflected light of sensory package 12) variable quantity are as follows:

Δ λ 0=2 × Δ n × L+2 × n × Δ L+2 × Δ n × Δ L；

Wherein, Δ λ 0 indicates that the variable quantity of the characteristic wavelength of the reflected light of optical grating construction 122, Δ n indicate optical grating construction 122 Effective refractive index n variable quantity, Δ L indicates the variable quantity of the cycle length L of optical grating construction 122, Δ n and Δ L with temperature The variation delta T of degree is linearly related, and therefore, Δ n=τ × Δ T, Δ L=α × Δ T, τ indicate effective refraction of optical grating construction 122 The temperature sensitivity coefficient of rate n, α indicate the temperature sensitivity coefficient of the cycle length L of optical grating construction 122, and τ and α are constant, Then Δ n=τ × Δ T and Δ L=α × Δ T, which is substituted into Δ λ 0=2 × Δ n × L+2 × n × Δ L+2 × Δ n × Δ L, to obtain To the variable quantity of the characteristic wavelength λ (characteristic wavelength that is to say the reflected light of sensory package 12) of the reflected light of optical grating construction 122 Are as follows:

Δ λ 0=2 × (τ × Δ T) × L+2 × n × (α × Δ T)+2 × (τ × Δ T) × (α × Δ T)

=2 × (τ × L+ α × n) × Δ T+2 × τ × α × Δ T²；

Due to 2 × τ × α × Δ T²The order of magnitude be usually the 10 of 2 × (τ × L+ α × n) × Δ T^-6Times, therefore, 2 × τ × α×ΔT²It can be ignored, then the characteristic wavelength λ of the reflected light of optical grating construction 122 (that is to say the reflected light of sensory package 12 Characteristic wavelength) variable quantity are as follows:

Δ λ 0=2 × (τ × L+ α × n) × Δ T=σ × Δ T；

Wherein, σ=2 × (τ × L+ α × n), σ indicate the temperature sensitivity coefficient of the sensory package 12, optical grating construction 122 Effective refractive index n and cycle length L be usually constant, therefore σ is constant, it follows that the reflected light of optical grating construction 122 The variation delta λ 0 of characteristic wavelength λ (characteristic wavelength that is to say the reflected light of sensory package 12) and the variation delta T line of temperature Property it is related.

The temperature sensitivity coefficient of dual sampling device 1 and the quantity of the sensory package 12 in dual sampling device 1 are at just Than for example, dual sampling device 1 includes A sensory package 12, the then temperature sensitive of 1 sensory package 12 of dual sampling device Spending coefficient can be A × σ, then the variable quantity of the characteristic wavelength λ of the reflected light of dual sampling device 1 are as follows:

Δ λ=2 × (τ × L+ α × n) × Δ T=A × σ × Δ T.

When measuring the variable quantity of temperature, the variation of the characteristic wavelength λ of the reflected light of dual sampling device 1 can be first measured Δ λ is measured, the variable quantity of the characteristic wavelength λ of the reflected light for the dual sampling device 1 for then obtaining measurement substitutes into Δ λ=2 × (τ × L+ α × n) the variation delta T of temperature is calculated in × Δ T=A × σ × Δ T.

2, by the variable quantity of the output electric current of measurement dual sampling device 1, the variable quantity of temperature is measured.

When the temperature varies, the source-drain current of TFT changes, and illustratively, please refers to Fig. 5 to Fig. 7, Fig. 5 is shown The source-drain current of a-si TFT provided by the embodiments of the present application a kind of and the relational graph of temperature, Fig. 6 show the application implementation A kind of source-drain current for Oxide TFT that example provides and the relational graph of temperature, Fig. 7 show one kind provided by the embodiments of the present application The source-drain current of LTPS TFT and the relational graph of temperature, in Fig. 5 into Fig. 7, horizontal axis indicates temperature, and the longitudinal axis indicates the source and drain of TFT Electric current, Fig. 5 to Fig. 7 indicate the source-drain current of TFT and temperature in source-drain voltage Vds=15V, grid voltage Vgate=15V The relationship of degree, in Fig. 5, the fitting a straight line of the source-drain current I1 and temperature T1 of a-si TFT can be with are as follows: I1=0.309T1+ 15.16 R1²=0.9985, R1²Indicate the linearity of I1 and T1；In Fig. 6, the source-drain current I2's and temperature T2 of Oxide TFT Fitting a straight line can be with are as follows: I2=0.0447T2+8.9666, R2²=0.9977, R2²Indicate the linearity of I2 and T2；In Fig. 7, The fitting a straight line of the source-drain current I3 and temperature T3 of LTPS TFT can be with are as follows: I3=0.1426T3+25.775, R3²=0.9954, R3²Indicate the linearity of I3 and T3.It follows that Fig. 5 is into Fig. 7, the source-drain current of the TFT of three types and temperature it is linear Degree is all larger than 0.995, it is therefore contemplated that the variable quantity of the source-drain current of TFT and the variable quantity of temperature are linearly related.

Based on the principle, in the embodiment of the present application, the variable quantity of the source-drain current of TFT 123 and the variable quantity line of temperature Property it is related, since the output electric current of sensory package 12 is usually the sum of the source-drain current of the TFT 123 in sensory package 12, because This, the variable quantity of the output electric current of sensory package 12 and the variable quantity of temperature are linearly related, the output electric current of the sensory package 12 Variable quantity can be with are as follows:

Δ I0=δ × Δ T；

Wherein, Δ I0 indicates that the variable quantity of the output electric current of sensory package 12, δ indicate the output electric current of sensory package 12 Temperature sensitivity coefficient, δ are constant, and Δ T indicates the variable quantity of temperature.

The temperature sensitivity coefficient and the sensory package 12 in dual sampling device 1 of the output electric current I of dual sampling device 1 Quantity (quantity that is to say the tft array in dual sampling device 1) it is directly proportional, for example, dual sampling device 1 includes B Sensory package 12 (that is to say B tft array), then the temperature sensitivity coefficient of the output electric current I of the dual sampling device 1 can be with For B × δ, then the variable quantity of the output electric current I of dual sampling device 1 can be with are as follows:

Δ I=B × δ × Δ T.

When measuring the variable quantity of temperature, the variation delta I of the output electric current I of dual sampling device 1 can be first measured, so The variation delta I that measurement is obtained to the output electric current I of dual sampling device 1 afterwards substitutes into Δ I=B × δ × Δ T and temperature is calculated Variation delta T.

It should be noted that the output electric current of sensory package 12 refers to the source of all TFT123 in the sensory package 12 The sum of leakage current, the output electric current I of the dual sampling device 1 refer to the source and drain of all TFT 123 in dual sampling device 1 The sum of electric current.Since the source-drain current of a TFT is smaller, when the temperature varies, the variation of the source-drain current of a TFT can Energy can be unobvious, and the variable quantity of the sum of source-drain current of multiple TFT is more obvious, therefore, passes through and measures dual sampling device 1 Output electric current I variation delta I temperature variable quantity process it is relatively simple.

Scene two, independent measurement stress variable quantity scene (pass through measurement dual sampling device 1 reflected light feature The variable quantity of wavelength measures the variable quantity of stress).

Please continue to refer to above-mentioned Fig. 2, light a indicates that the light for injecting the first optical waveguide 121 of sensory package 12 (that is to say The incident light of the dual sampling device 1), the reflected light that light b indicates that the optical grating construction 122 of sensory package 12 generates (that is to say The reflected light of the dual sampling device 1), according to grating type optical waveguide principle, when in broadband light injection optical grating construction When 122, optical grating construction 122 can generate reflected light, and the characteristic wavelength λ of reflected light is the corresponding wavelength of wave crest of the reflected light, and λ= 2nL, n indicate that the effective refractive index of optical grating construction 122, L indicate the cycle length of optical grating construction 122.

When stress changes, the cycle length L of optical grating construction 122 can change, so that optical grating construction 122 The characteristic wavelength λ (characteristic wavelength that is to say the reflected light of sensory package 12) of reflected light change, then the optical grating construction The variable quantity of the characteristic wavelength λ (characteristic wavelength that is to say the reflected light of sensory package 12) of 122 reflected light are as follows:

Δ λ 0=2 × n × Δ L；

Wherein, Δ λ 0 indicates that the variable quantity of the characteristic wavelength of the reflected light of optical grating construction 122, Δ L indicate optical grating construction 122 Cycle length L variable quantity, the variable quantity ε of Δ L and stress is linearly related, and therefore, Δ L=β × ε, β indicate optical grating construction The stress sensitivity coefficient of 122 cycle length L, β are constant, and β value is related with the Young's modulus of flexible substrates 11, then by Δ L The characteristic wavelength λ that=β × ε substitutes into the reflected light of available optical grating construction 122 in Δ λ 0=2 × n × Δ L (that is to say sensing The characteristic wavelength of the reflected light of component 12) variable quantity are as follows:

Δ λ 0=2 × n × (β × ε)=ξ × ε；

Wherein, ξ=2 × n × β, ξ indicate the stress sensitivity coefficient of the sensory package 12, effective folding of optical grating construction 122 The rate n of penetrating is usually constant, therefore ξ is constant, it follows that the characteristic wavelength λ of the reflected light of optical grating construction 122 (that is to say biography Feel the characteristic wavelength of the reflected light of component 12) variable quantity and stress variable quantity ε it is linearly related.

The stress sensitivity coefficient of dual sampling device 1 and the quantity of the sensory package 12 in dual sampling device 1 are at just Than for example, dual sampling device 1 includes A sensory package 12, the then stress sensitive of 1 sensory package 12 of dual sampling device Spending coefficient can be A × ξ, then the variation delta λ of the characteristic wavelength λ of the reflected light of dual sampling device 1 are as follows:

Δ λ=2 × n × (β × ε)=A × ξ × ε.

When measuring the variable quantity of stress, the variation of the characteristic wavelength λ of the reflected light of dual sampling device 1 can be first measured Δ λ is measured, then variation delta λ that measurement is obtained to the characteristic wavelength λ of the reflected light of dual sampling device 1 substitutes into Δ λ=2 × n The variable quantity ε of stress is calculated in × (β × ε)=A × ξ × ε.

Scene three measures the scene of the variable quantity of temperature and the variable quantity of stress (by measuring dual sampling device 1 simultaneously Output electric current variable quantity and dual sampling device 1 reflected light characteristic wavelength variable quantity, according to dual sampling device 1 Sensitivity matrix calculate temperature variable quantity and stress variable quantity).

Seen from the above description, the change of the variation delta λ of the characteristic wavelength λ of the reflected light of dual sampling device 1 and temperature The relationship of change amount Δ T, the relationship of the variation delta T of the variation delta I and temperature of the output electric current I of dual sampling device 1, with And the relationship of the variable quantity ε of the variation delta λ and stress of the characteristic wavelength λ of the reflected light of dual sampling device 1 is respectively as follows:

Δ λ=A × σ × Δ T；

Δ I=B × δ × Δ T；

Δ λ=A × ξ × ε；

Then when the temperature varies, the output electric current I of dual sampling device 1 can change, the dual sampling device 1 Output electric current I variation delta I are as follows:

Δ I=B × δ × Δ T；

When the temperature varies, the characteristic wavelength λ of the reflected light of dual sampling device 1 changes, when stress occurs When variation, the characteristic wavelength λ of the reflected light of dual sampling device 1 changes, then, should when temperature and stress change The variation delta λ of the characteristic wavelength λ of the reflected light of dual sampling device 1 are as follows:

Δ λ=A × σ × Δ T+A × ξ × ε；

In summary available dual sampling device 1 of Δ I=B × δ × Δ T and Δ λ=A × σ × Δ T+A × ξ × ε Sensitivity matrix are as follows:

At the same time when the variable quantity of the variable quantity and stress of measurement temperature, the defeated of dual sampling device 1 can be measured respectively The variation delta λ of the characteristic wavelength λ of the reflected light of the variation delta I and dual sampling device 1 of electric current I out, by dual sampling In the variation delta λ substitution of the characteristic wavelength λ of the reflected light of the variation delta I and dual sampling device 1 of the output electric current I of device 1 It states sensitivity matrix and the variation delta T of temperature and the variable quantity ε of stress is calculated.

Dual sampling device 1 provided by the embodiments of the present application can determine that double parameters are passed according to the source-drain current of TFT 123 The output electric current of sensor 1, according to the variable quantity of the variable quantity temperature of the output electric current of the dual sampling device 1, according to logical The variable quantity and temperature of the characteristic wavelength for the reflected light that the light for crossing the conduction of first optical waveguide 121 to optical grating construction 122 generates The variable quantity of variable quantity identified sign, due to the variable quantity of the source-drain current of TFT 123 it is only related to the variable quantity of temperature (namely Be dual sampling device output electric current variable quantity it is only related to the variable quantity of temperature), therefore, the dual sampling device 1 survey The process of the variable quantity of the variable quantity and stress of amount temperature will not interact, the accuracy of the measurement of the dual sampling device 1 It is higher.Since dual sampling device 1 provided by the embodiments of the present application can be simultaneously to the variable quantity of two kinds of parameters of temperature and stress It measures, therefore, measures temperature and stress with using relatively independent and integrally disposed temperature sensor and strain gauge The scheme of the variable quantity of two kinds of parameters is compared, and the manufacturing cost of dual sampling device can be reduced, provided by the embodiments of the present application Dual sampling device effect when being applied to distributed sensing system is preferable.

Dual sampling device provided by the embodiments of the present application can be applied to method hereafter, double ginsengs in the embodiment of the present application The manufacturing method and manufacturing theory of quantity sensor may refer to the description in hereafter each embodiment.

Referring to FIG. 8, it illustrates a kind of methods of the manufacturing method of dual sampling device provided by the embodiments of the present application Flow chart, the manufacturing method of the dual sampling device can be used for manufacturing Fig. 1 to Fig. 4 it is any shown in dual sampling device 1, ginseng See Fig. 8, the manufacturing method of the dual sampling device includes the following steps:

Step 801 provides a flexible substrates.

Step 802 forms at least one sensory package on a flexible substrate, and sensory package includes the first optical waveguide, grating Side of the TFT far from flexible substrates is arranged in structure and TFT, optical grating construction, and the light out of the first optical waveguide is arranged in optical grating construction Side.

Wherein, TFT is configured as output source-drain current, determines dual sampling device with the variable quantity according to source-drain current Electric current is exported, according to the variable quantity of the variable quantity temperature of output electric current；

First optical waveguide is configured as will inject into the light conduction of the first optical waveguide to optical grating construction, and optical grating construction is configured To generate reflected light according to the light of conduction to optical grating construction, according to the change of the variable quantity of the characteristic wavelength of reflected light and temperature The variable quantity of change amount identified sign.

In conclusion the manufacturing method of dual sampling device provided by the embodiments of the present application, double parameters of this method manufacture Sensor includes at least one sensory package, which includes the first optical waveguide, optical grating construction and thin film transistor (TFT), same When being measured to the variable quantity of two kinds of parameters of temperature and stress, double ginsengs can be determined according to the source-drain current of thin film transistor (TFT) The output electric current of quantity sensor, according to the dual sampling device output electric current variable quantity temperature variable quantity, according to The variable quantity of the characteristic wavelength of the reflected light to the light generation of optical grating construction and the variation of temperature are conducted by the first optical waveguide Measure the variable quantity of identified sign.Since the variable quantity of the source-drain current of thin film transistor (TFT) is only related to the variable quantity of temperature, The process of the variable quantity of the variable quantity and stress of dual sampling device measurement temperature will not interact, the dual sampling device Measurement accuracy it is higher.

Optionally, step 802 includes:

TFT layer is formed on a flexible substrate, and TFT layer is including the first support construction, the second support construction and along first party To multiple TFT of array arrangement；

Optical transport graph layer is formed in the flexible substrates for be formed with TFT layer, optical transport graph layer includes being located at first First optical waveguide of side of the support structure far from flexible substrates, second of the side positioned at the second support construction far from flexible substrates Optical waveguide, and it is located at multiple gratings strips of side of multiple TFT far from flexible substrates one by one；

Filled layer is formed in the flexible substrates for being formed with optical transport graph layer, filled layer includes being arranged in the first optical waveguide With the packing between the first gratings strips, the packing between the second optical waveguide and the second gratings strips is set, and setting exists Packing between per two adjacent gratings strips；

Wherein, optical grating construction is arranged in the light emission side of the first optical waveguide, and the setting of the second optical waveguide is in optical grating construction far from the The side of one optical waveguide.

All the above alternatives can form the alternative embodiment of the application, herein no longer using any combination It repeats one by one.

Referring to FIG. 9, it illustrates the sides of the manufacturing method of another dual sampling device provided by the embodiments of the present application Method flow chart, the embodiment of the present application are illustrated for manufacturing dual sampling device 1 shown in Fig. 3.Referring to Fig. 9, this pair ginseng The manufacturing method of quantity sensor includes the following steps:

Step 901 provides a flexible substrates.

It is alternatively possible to first provide a rigid substrate substrate, flexible substrates then are formed on rigid substrate substrate, to mention For flexible substrates.

Wherein, which can be transparent substrate, for example, rigid substrate substrate can be for using glass, stone English or transparent resin etc. have hard substrate made of the leaded light of certain robustness and nonmetallic materials, the material of flexible substrates It can be polyimides (English: Polyimide；The flexible materials such as referred to as: PI).

It is alternatively possible to coat one layer of PI solution on rigid substrate substrate, and PI solution is dried, with shape At flexible substrates.

Step 902 forms TFT layer on a flexible substrate, TFT layer include the first support construction, the second support construction and Along multiple TFT of first direction array arrangement.

Referring to FIG. 10, it illustrates it is provided by the embodiments of the present application it is a kind of in flexible substrates 11 formed TFT layer after Schematic diagram, referring to Figure 10, TFT layer includes the first support construction 125, the second support construction 126 and arranges along first direction x array Multiple TFT 123 of cloth, multiple TFT 123 constitute tft array, and the height of multiple TFT 123 is equal, and the first support construction 125, the second support construction 126 is equal with the height of 123 this three of TFT (that is to say the thickness phase of each position of TFT layer Deng).

Optionally, TFT 123 include along set gradually far from 11 direction of flexible substrates grid, gate insulation layer, active layer, Interlayer dielectric layer and source-drain electrode layer (being not shown in Figure 10), source-drain electrode layer include source electrode and drain electrode, source electrode and drain electrode respectively with Active layer overlap joint；First support construction 125 may include with grid, gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode layer One-to-one multiple support film layers (being not shown in Figure 10), multiple support film layer along the direction of separate flexible substrates 11 according to Secondary superposition, similarly, the second support construction 126 may include and grid, gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode The one-to-one multiple support film layers (being not shown in Figure 10) of layer, multiple support film layer is along the direction far from flexible substrates 11 It is sequentially overlapped.In the embodiment of the present application, forming TFT in flexible substrates 11 be may comprise steps of:

Step (1) passes through chemical vapor deposition (English: Chemical Vapor Deposition；Referred to as: CVD), it applies It applies or the modes such as sputtering forms grid material layers in flexible substrates 11, grid material layers are carried out by a patterning processes Processing obtains grid.

Step (2) forms insulation by modes such as CVD, coating or sputterings in the flexible substrates 11 for being formed with grid Material layers are handled to obtain gate insulation layer by a patterning processes to isolation material layer.

Step (3) is formed in the flexible substrates 11 for being formed with gate insulation layer by modes such as CVD, coating or sputterings Active layer material layers are handled to obtain active layer by a patterning processes to active layer material layers.

Step (4) is formed in the flexible substrates 11 for forming active layer by modes such as CVD, coating or sputterings and is insulated Material layers are handled to obtain interlayer dielectric layer by a patterning processes to isolation material layer.

Step (5) is formed in the flexible substrates 11 for forming interlayer dielectric layer by modes such as CVD, coating or sputterings Conductive material layer handles conductive material layer to obtain source-drain electrode layer by a patterning processes.

It should be noted that in the mistake for manufacturing above-mentioned grid, gate insulation layer, active layer, interlayer dielectric layer and source-drain electrode layer Cheng Zhong can be formed in the first support construction 125 and the second support construction 126 and be supported film layer accordingly, therefore in manufacture TFT During 123, the manufacture that the first support construction 125 and the second support construction 126 may be implemented so be can simplify The manufacturing process of the dual sampling device 1.

Step 903 forms optical transport graph layer in the flexible substrates for be formed with TFT layer, and optical transport graph layer includes position The first optical waveguide in side of first support construction far from flexible substrates, positioned at the second support construction far from flexible substrates one Second optical waveguide of side, and it is located at multiple gratings strips of side of multiple TFT far from flexible substrates one by one.

Figure 11 is please referred to, it illustrates a kind of shapes in the flexible substrates for be formed with TFT layer provided by the embodiments of the present application At the schematic diagram after optical transport graph layer, referring to Figure 11, the first optical waveguide 121, the second optical waveguide 124 and multiple gratings strips The setting of 1221 same layers, and the first optical waveguide 121, the second optical waveguide 124 and multiple gratings strips 1221 are in the same plane.Its In, the first optical waveguide 121, the second optical waveguide 124 are identical with the material of 1221 this three of gratings strips.Illustratively, first light wave The material for leading 1221 this three of the 121, second optical waveguide 124 and gratings strips all can be SiN_X、SiOx、Al₂O₃Or the nothings such as SiOxNx Machine material.

Illustratively, it can be formed in the flexible substrates 11 for being formed with TFT layer by modes such as CVD, coating or sputterings SiN_XMaterial layers, by a patterning processes to SiN_XMaterial layers are handled to obtain the first optical waveguide 121, the second optical waveguide 124 And gratings strips 1221.

Step 904 forms filled layer in the flexible substrates for being formed with optical transport graph layer, and filled layer includes setting the The packing between the second optical waveguide and the second gratings strips is arranged in packing between one optical waveguide and the first gratings strips, with And the packing between every two adjacent gratings strips is set.

Schematic diagram after forming filled layer in the flexible substrates 11 for be formed with optical transport graph layer can refer to Fig. 2, such as Shown in Fig. 2, filled layer includes the packing 1222 being arranged between the first optical waveguide 121 and the first gratings strips, is arranged second Packing 1222 between optical waveguide 124 and the second gratings strips, and be arranged between every two adjacent gratings strips 1221 Packing 1222.Wherein, the packing between the first optical waveguide 121 and the first gratings strips is arranged in multiple gratings strips 1221 1222, the packing 1222 between the second optical waveguide 124 and the second gratings strips is set, and every two adjacent light are arranged in Packing 1222 between grizzly bar 1221 constitutes optical grating construction 122, and optical grating construction 122 is located at the light emission side of the first optical waveguide 121, Second optical waveguide 124, which is located at side of the optical grating construction 122 far from the first optical waveguide 121, (that is to say, optical grating construction 122 is located at the Between the light emission side of one optical waveguide 121 and the incident side of the second optical waveguide 124).

Wherein, the refractive index of refractive index from gratings strips 1221 of packing 1222 is different, and the material of packing 1222 can be with For the transparent material different from the refractive index of 1221 material of gratings strips, for example, the material of the packing 1222 can be SiO₂.Show Example ground, can form SiO in the flexible substrates 11 for being formed with optical transport graph layer by modes such as CVD, coating or sputterings₂ Material layers, by a patterning processes to SiO₂Material layers are handled to obtain packing 1222.

It should be noted that as shown in Figure 10 and Figure 11, due in the TFT layer that step 902 is formed, adjacent two A fixed gap is all had between TFT and between TFT and support construction, therefore also can when formation packing in the step 904 Packing is formed between two adjacent TFT and between TFT and support construction, details are not described herein for the embodiment of the present application.

Step 905 forms light shield layer in the flexible substrates for be formed with filled layer.

Schematic diagram after forming light shield layer 13 in the flexible substrates 11 for being formed with filled layer can refer to above-mentioned Fig. 3.Show Example ground, can form one layer of lightproof material by modes such as CVD, coating or sputterings in the flexible substrates 11 for being formed with filled layer Material is used as light shield layer 13, which can be black resin or metal material.Wherein, which can be to TFT 123 are blocked, and are avoided ambient from exposing to TFT123 and are had an impact to the source-drain current of TFT 123, to improve double ginsengs The accuracy of quantity sensor 1.

It should be noted that in the manufacturing method of dual sampling device provided by the embodiments of the present application, it is related primary Patterning processes include photoresist coating, exposure, development, etching and photoresist lift off, by a patterning processes to material layers (example Such as SiO₂Material layers) to be handled to obtain corresponding structure (such as packing 1222) include: in material layers (such as SiO₂Material Layer) on coat a layer photoresist formed photoresist layer, photoresist layer is exposed using mask plate, so that photoresist layer is formed Complete exposure region and non-exposed area, are handled using developing process later, are completely removed the photoresist of complete exposure region, non-exposure The photoresist in light area all retains, using etching technics to material layers (such as SiO₂Material layers) on completely the corresponding area of exposure region Domain performs etching, and the photoresist for being finally peeled away non-exposed area obtains corresponding structure (such as packing 1222).It here is with light Photoresist is to be illustrated for positive photoresist, and when photoresist is negative photoresist, the processes of patterning processes can be with With reference to the description of this section, details are not described herein for the embodiment of the present application.

It should also be noted that, the sequencing of the manufacturing method step of dual sampling device provided by the embodiments of the present application Appropriate adjustment can be carried out, step according to circumstances can also accordingly be increased and decreased, for example, can also utilize after step 905 Thin film encapsulation technology is packaged dual sampling device, is finally peeled away rigid substrate substrate, is formed double based on flexible substrates Parametrical sense device, anyone skilled in the art within the technical scope of the present application, can readily occur in change The method of change should all cover within the scope of protection of this application, therefore repeat no more.

Figure 12 is please referred to, it illustrates a kind of structural schematic diagram of double parameter sensing systems provided by the embodiments of the present application, Double parameter sensing systems include: at least one dual sampling device 1 (3 are only shown in Figure 12), infrared light supply 2, spectrum point Analyzer 3 and at least one current detecting unit 4 (3 are only shown in Figure 12), at least one current detecting unit 4 at least One dual sampling device 1 corresponds, and each dual sampling device 1 can be dual sampling shown in Fig. 1 to Fig. 4 is any Device 1, each current detecting unit 4 and each TFT (being not shown in Figure 12) of corresponding dual sampling device 1 connection.It please refers to Figure 13, it illustrates the enlarged drawings of the region D of double parameter sensing systems shown in Figure 12, referring to Figure 13 and combine Figure 12, infrared The first optical waveguide 121 that light source 2 and spectroanalysis instrument 3 are arranged at dual sampling device 1 (is not shown far from optical grating construction in Figure 13 Side out), in other words for, for each dual sampling device 1, in the dual sampling device 1, the first optical waveguide 121 lean on near-infrared light source 2 and spectroanalysis instrument 3 relative to the second optical waveguide 124, and the second optical waveguide 124 is relative to the first light wave 121 are led far from infrared light supply 2 and spectroanalysis instrument 3.

Wherein, infrared light supply 2 is configured as emitting infrared light to the first optical waveguide 121, and infrared light supply 2 issues infrared Influence of the light to TFT is smaller, so that TFT is not likely to produce photo-generated carrier, (photo-generated carrier is referred under the irradiation of light The carrier of generation), to reduce influence of the light of the sending of infrared light supply 2 to the source-drain current of TFT, improve double parameters The accuracy of sensing system measurement.

In each dual sampling device 1, the first optical waveguide 121 is configured as will inject into the light of the first optical waveguide 121 Conduction is to optical grating construction, and optical grating construction is configured as generating reflected light according to the light of conduction to the optical grating construction, and TFT is configured To export source-drain current.

Current detecting unit 4 is configured as detecting the source-drain current of the TFT output of corresponding dual sampling device 1, obtains The output electric current of the dual sampling device 1, according to the change of the variable quantity temperature of the output electric current of the dual sampling device 1 Change amount.Spectroanalysis instrument 3 is configured as being handled to obtain the feature of the reflected light to the reflected light that each optical grating construction generates Wavelength, according to the variable quantity of the variable quantity of the characteristic wavelength of the reflected light and the variable quantity identified sign of temperature.

Optionally, as shown in Figure 12 and Figure 13, double parameter sensing systems further include: gate driving circuit 5 and source electrode drive Dynamic circuit 6, gate driving circuit 5 connects with the grid of the TFT of each dual sampling device 1, source electrode drive circuit 6 with each pair The source electrode of the TFT of parametrical sense device 1 connects, and each current detecting unit 4 is with each TFT's of corresponding dual sampling device 1 Drain electrode connection.Illustratively, as shown in figure 13, gate driving circuit 5 is connect by gate line 1231 with the grid of TFT, source Pole driving circuit 6 is connect by source signal line 1232 with the source electrode of TFT, and each current detecting unit 4 passes through drain signal line 1233 connect with the drain electrode of each TFT of corresponding dual sampling device 1.Wherein, gate driving circuit 5 can be inputted to grid High-frequency periodicity high low level voltage, for example, the high level voltage can be 15V (Chinese: volt), low level voltage can be with For 0V, source electrode drive circuit 6 can be more than or equal to 15V to source electrode input direct-current voltage, the DC voltage.

Optionally, as shown in figure 12, multiple dual sampling devices 1 are connected, and multiple dual sampling devices 1 share infrared light supply 2, spectroanalysis instrument 3, gate driving circuit 5 and source electrode drive circuit 6, current detecting unit 4 and each dual sampling device 1 one One is correspondingly connected with, to prevent the measurement result of output electric current of each dual sampling device 1 from interfering with each other.

Further, please continue to refer to Figure 12, double parameter sensing systems further include: control equipment 7, infrared light supply 2, light Spectrum analysis instrument 3, at least one current detecting unit 4, gate driving circuit 5 and source electrode drive circuit 6 connect with control equipment 7 It connects.

Wherein, which is configured as: extracting, obtains to the output electric current of at least one current detecting unit 4 To the output electric current of each dual sampling device 1, according to the variable quantity temperature of the output electric current of each dual sampling device 1 Variable quantity, each dual sampling device 1 output electric current be dual sampling device 1 in multiple TFT output source-drain current The sum of.

Optionally, it is connect due to each current detecting unit 4 with control equipment 7, each current detecting unit 4 can To transmit the output electric current of corresponding dual sampling device 1 to control equipment 7, control equipment 7 is by receiving each current detecting The output electric current for the dual sampling device 1 that unit 4 transmits, obtains the output electric current of corresponding dual sampling device 1, to realize Extraction to the output electric current of at least one current detecting unit 4.

Wherein, which is also configured to each dual sampling device 1 obtained to the processing of spectroanalysis instrument 3 Characteristic wavelength extracts, and obtains the corresponding characteristic wavelength of each dual sampling device 1, right according to each dual sampling device 1 The variable quantity of the variable quantity identified sign of the temperature of the variable quantity and dual sampling device for the characteristic wavelength answered, the dual sampling The corresponding characteristic wavelength of device 1 is equal to the characteristic wavelength for the reflected light that the optical grating construction in dual sampling device 1 generates.

Optionally, the cycle length of the optical grating construction in different dual sampling devices 1 can be different, therefore, different The corresponding characteristic wavelength of dual sampling device 1 (characteristic wavelength that is to say the reflected light of dual sampling device 1) is different, and different Dual sampling device 1 reflected light reach spectroanalysis instrument 3 time it is different, therefore, control equipment 7 can be according to each double The difference of the corresponding characteristic wavelength of parametrical sense device 1 and the reflected light of each dual sampling device 1 reach spectroanalysis instrument 3 The difference of time demodulates the characteristic wavelength of each dual sampling device 1, obtains the corresponding spy of each dual sampling device 1 Levy wavelength.Optionally, control equipment 7 can be demodulated by characteristic wavelength of the software mode to each dual sampling device 1.

Wherein, control equipment according to each dual sampling device 1 output electric current variable quantity temperature variable quantity, And the variable quantity of the temperature according to the variable quantity and dual sampling device of the corresponding characteristic wavelength of each dual sampling device 1 The variable quantity of identified sign can refer to the description of above-described embodiment, and details are not described herein for the embodiment of the present application.

Optionally, which can be additionally configured to: control gate drive circuit 5 is all to grid input high-frequency Phase property high low level voltage, and control infrared light supply 2, spectroanalysis instrument 3, at least one current detecting unit 4, gate driving The switch of circuit 5 and source electrode drive circuit 6.

Double parameter sensing systems provided by the embodiments of the present application can pass through multiple dual sampling devices 1 being arranged in series It is integrated into distributed sensing system, and will not be interfered with each other between each dual sampling device 1, there is preferable distributed effect.

In conclusion dual sampling device includes at least one in double parameter sensing systems provided by the embodiments of the present application Sensory package, which includes the first optical waveguide, optical grating construction and thin film transistor (TFT), at the same time to temperature and two kinds of stress When the variable quantity of parameter measures, the output electricity of dual sampling device can be determined according to the source-drain current of thin film transistor (TFT) Stream is passed according to the variable quantity of the variable quantity temperature of the output electric current of the dual sampling device according to by the first optical waveguide It is directed at the variation of the variable quantity of the characteristic wavelength of the reflected light of the light generation of optical grating construction and the variable quantity identified sign of temperature Amount.Since the variable quantity of the source-drain current of thin film transistor (TFT) is only related to the variable quantity of temperature, which surveys The process of the variable quantity of the variable quantity and stress of amount temperature will not interact, the accuracy of the measurement of the dual sampling device compared with It is high.

It is apparent to those skilled in the art that for convenience and simplicity of description, double ginsengs of foregoing description The structure and measuring principle for measuring the dual sampling device in sensing system can refer to previous embodiment, the embodiment of the present application This will not be repeated here.

Those skilled in the art will readily occur to its of the application after considering specification and practicing application disclosed herein Its embodiment.This application is intended to cover any variations, uses, or adaptations of the application, these modifications, purposes or Person's adaptive change follows the general principle of the application and including the undocumented common knowledge in the art of the application Or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the application are wanted by right It asks and points out.

It should be understood that the application is not limited to the precise structure that has been described above and shown in the drawings, and And various modifications and changes may be made without departing from the scope thereof.Scope of the present application is only limited by the accompanying claims.

Claims

1. a kind of dual sampling device, which is characterized in that the dual sampling device includes:

The sensory package includes the first optical waveguide, optical grating construction and thin film transistor (TFT), and the optical grating construction is arranged described thin The light emission side of first optical waveguide is arranged in side of the film transistor far from the flexible substrates, the optical grating construction；

The thin film transistor (TFT) is configured as output source-drain current, to determine the dual sampling device according to the source-drain current Output electric current, according to it is described output electric current variable quantity temperature variable quantity；

First optical waveguide is configured as will inject into the light conduction of first optical waveguide to the optical grating construction, the light Grid structure is configured as generating reflected light according to the light of conduction to the optical grating construction, according to the characteristic wave of the reflected light The variable quantity of the variable quantity identified sign of long variable quantity and the temperature.

2. dual sampling device according to claim 1, which is characterized in that

The sensory package further include: the second optical waveguide, second optical waveguide setting is in the optical grating construction far from described the The side of one optical waveguide；

Second optical waveguide is configured as the light conduction for injecting second optical waveguide by the optical grating construction going out institute State sensory package.

3. dual sampling device according to claim 2, which is characterized in that the sensory package includes along first direction battle array Multiple thin film transistor (TFT)s of arrangement are arranged, the optical grating construction includes multiple correspondingly with multiple thin film transistor (TFT)s Gratings strips, each gratings strips are arranged in corresponding side of the thin film transistor (TFT) far from the flexible substrates, and described the One direction is parallel with the light conduction orientation of first optical waveguide.

4. dual sampling device according to claim 3, which is characterized in that the optical grating construction further include: be arranged in institute The packing between the first optical waveguide and the first gratings strips is stated, filling out between second optical waveguide and the second gratings strips is set Item is filled, and the packing being arranged between every two adjacent gratings strips.

5. dual sampling device according to claim 2, which is characterized in that the sensory package further include: be arranged in institute The first support construction between flexible substrates and first optical waveguide is stated, and is arranged in the flexible substrates and described second The second support construction between optical waveguide；

First optical waveguide, second optical waveguide and the setting of the multiple gratings strips same layer, and first optical waveguide, Second optical waveguide and the multiple gratings strips are in the same plane.

6. dual sampling device according to any one of claims 1 to 5, which is characterized in that the dual sampling device packet Include multiple sensory packages, multiple sensory packages array arrangement in a second direction, the second direction with it is any described The optical propagation direction of sensory package is vertical.

7. a kind of manufacturing method of dual sampling device, which is characterized in that the described method includes:

One flexible substrates are provided；

At least one sensory package is formed in the flexible substrates, the sensory package includes the first optical waveguide, optical grating construction And side of the thin film transistor (TFT) far from the flexible substrates, the grating is arranged in thin film transistor (TFT), the optical grating construction Light emission side of the structure setting in first optical waveguide；

Wherein, the thin film transistor (TFT) is configured as output source-drain current, to determine double parameters according to the source-drain current The output electric current of sensor, according to the variable quantity of the variable quantity temperature of the output electric current；

8. the method according to the description of claim 7 is characterized in that

Sensory package is formed in the flexible substrates, comprising:

Tft layer is formed in the flexible substrates, the tft layer includes the first support construction, second Support structure and multiple thin film transistor (TFT)s along first direction array arrangement；

Optical transport graph layer is formed in the flexible substrates for being formed with the tft layer, the optical transport graph layer includes It is remote to be located at second support construction for the first optical waveguide positioned at the side of first support construction far from the flexible substrates Second optical waveguide of the side from the flexible substrates, and it is located at multiple thin film transistor (TFT)s one by one far from the flexible base Multiple gratings strips of the side at bottom；

Form filled layer in the flexible substrates for being formed with the optical transport graph layer, the filled layer includes setting described the The filling between second optical waveguide and the second gratings strips is arranged in packing between one optical waveguide and the first gratings strips Item, and the packing being arranged between every two adjacent gratings strips；

Wherein, the light emission side of first optical waveguide is arranged in the optical grating construction, and second optical waveguide is arranged in the light Side of the grid structure far from first optical waveguide.

9. a kind of double parameter sensing systems, which is characterized in that double parameter sensing systems include:

Infrared light supply, spectroanalysis instrument, at least one current detecting unit and at least one dual sampling device, double ginsengs Quantity sensor be dual sampling device as claimed in any one of claims 1 to 6, at least one described current detecting unit with it is described At least one dual sampling device corresponds, and each current detecting unit is each with the corresponding dual sampling device A thin film transistor (TFT) connection, the infrared light supply and the spectroanalysis instrument are arranged at the institute of the dual sampling device State side of first optical waveguide far from the optical grating construction；

The current detecting unit is configured as detecting the thin film transistor (TFT) output of the corresponding dual sampling device Source-drain current obtains the output electric current of the dual sampling device, according to the variable quantity temperature of the output electric current Variable quantity；

The spectroanalysis instrument is configured as being handled to obtain the reflection to the reflected light that the optical grating construction generates The characteristic wavelength of light, according to the change of the variable quantity of the characteristic wavelength of the reflected light and the variable quantity identified sign of the temperature Change amount.

10. double parameter sensing systems according to claim 9, which is characterized in that double parameter sensing systems further include: Equipment is controlled, the spectroanalysis instrument and at least one described current detecting unit are connect with the control equipment, the control Control equipment is configured as:

The output electric current of at least one current detecting unit is extracted, the defeated of each dual sampling device is obtained Electric current out, it is each described double according to the variable quantity of the variable quantity temperature of the output electric current of each dual sampling device The output electric current of parametrical sense device be multiple thin film transistor (TFT)s outputs in the dual sampling device source-drain current it With；

The characteristic wavelength handled the spectroanalysis instrument extracts, and it is corresponding to obtain each dual sampling device Characteristic wavelength, according to the temperature of the variable quantity of the corresponding characteristic wavelength of each dual sampling device and the dual sampling device The variable quantity of the variable quantity identified sign of degree, the corresponding characteristic wavelength of the dual sampling device are equal to the dual sampling device In the optical grating construction generate the reflected light characteristic wavelength.