CN108183718B - A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT - Google Patents
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT Download PDFInfo
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
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Abstract
The invention discloses a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT；Including low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；In existing receiver structure, the receiver structure of superhet is complicated, power consumption is larger, therefore only zero-if architecture is most directly natural；Therefore the present invention uses zero-if architecture, is used in the lower frequency ranges of sub 1G, to realize low-power consumption and high integration.Simultaneously the problems such as DC maladjustment distinctive for zero-if architecture, the present invention eliminates the influence of DC maladjustment by introducing a kind of technology of direct current negative-feedback.
Description
Technical field
The present invention relates to integrated circuit related fieldss, specifically belong to a kind of low-consumption wireless radio frequency towards NB_loT
Front end integrated circuit.
Background technique
With the development of communication technology, mobile communication is from the connection of person to person, the company of Xiang Renyu object and object and object
It connects and strides forward, all things on earth interconnection is inexorable trend.Wherein NB_loT technology focuses on the Internet of Things market that low-power consumption extensively covers, and has and covers
Gai Guang, the features such as connection is more, rate is low, at low cost, low in energy consumption, framework is excellent.
Existing receiver structure mainly has superheterodyne receiver and zero intermediate frequency reciver.Zero-if architecture is receiver
Most natural, most direct implementation is the scheme that radiofrequency signal is directly down-converted to baseband signal.Zero intermediate frequency reciver knot
Structure block diagram is as shown in Figure 1, include low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier.The radio frequency letter received
It number after low-noise amplifier, is mixed, generates respectively with mutually and orthogonal two-way base band with two-way local oscillation signal orthogonal each other
Signal.Local oscillation signal frequency is identical as radio frequency signal frequency, therefore directly generates baseband signal after being mixed, and the selection of channel and
Gain adjustment is carried out in base band, is completed by intermediate-frequency filter and intermediate frequency amplifier.
Wherein, the disclosure of the invention of patent No. 201210007837.X one kind has high three order harmonics rejection ability and a high frequency
The front end integrated circuit structure of rate selectivity radio frequency, including low-noise amplifier and down-conversion mixer, the low noise amplification
Device input terminal connects antenna and matching network, and output end connects laod network and down-conversion mixer, the matching network and negative
Carrying lattice network is high q-factor band-pass circuit.Due to the high Q bandpass characteristics of matching network and laod network, so that entire radio frequency
Front end has good frequency selectivity and interference rejection capability.For adjusting the gain or bandwidth of front end, it is only necessary to change matching
The real part or imaginary part of the base band impedance of network or laod network, that is, the value of resistance or capacitor, performance indicator configuration are flexible.
Before the invention of the patent No. 201610256711.4 provides a kind of RF switch integration module and its integrated approach, radio frequency
Integrated circuit is held, the RF switch integration module includes: fan-out package moulding compound；At least one production has RF switch electric
The first tube core on road, the first tube core are GaAspHEMT tube core；At least one production have interface circuit, control circuit the
Two tube cores；Using fan-out package mode, by GaAspHEMT tube core and the second tube core for being integrated with interface circuit and control circuit
Heterogeneous to be integrated in the same integration module, solving GaAspHEMT technique can not integrated interface circuit and control circuit function
Tube core the problem of, using be integrated with RF switch function GaAspHEMT tube core and be integrated with interface circuit and control circuit
The second tube core heterogeneous integration module, instead of using SOI technology to manufacture and be integrated with interface circuit and control in the prior art
The RF switch chip of circuit, and then improve the performance of RF switch chip.
However, due in existing receiver structure, the receiver structure of superhet is complicated, power consumption is larger, therefore
Only zero-if architecture is most directly natural.
Summary of the invention
Therefore, in order to solve above-mentioned deficiency, before the present invention provides a kind of low-consumption wireless radio frequency towards NB_loT herein
Hold integrated circuit.The present invention uses zero-if architecture, is used in the lower frequency ranges of sub 1G, to realize low-power consumption and height
Integrated level.Simultaneously for zero-if architecture distinctive DC maladjustment the problems such as, the present invention is by introducing a kind of direct current negative-feedback
Technology eliminates the influence of DC maladjustment.
The invention is realized in this way constructing a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, wrap
Include low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；The received radiofrequency signal of antenna end is put by low noise
Big device amplification is output in frequency mixer, and the local oscillation signal mixing orthogonal each other with two-way generates two-way baseband signal；Pass through intermediate frequency
Filter filters out useless harmonic signal, finally amplifies output in intermediate frequency amplifier；
The low-noise amplifier is in the first order of receives link, for putting to the radiofrequency signal that antenna end is come in
Greatly；Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；
The composition of low-noise amplifier include metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12,
M13, capacitor C1, C2, resistance R1, R2, R3, R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit be total to gate junction structure using two-stage, and the source electrode of metal-oxide-semiconductor M1, M2, M13 are grounded；
The grid grade of resistance R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit be total to gate junction structure using two-stage, can be effectively reduced the long-acting influence for coping with input impedance of ditch, metal-oxide-semiconductor M7,
M8 constitutes constant-current source and does active load；Common-mode feedback stable structure output common mode voltage is added in circuit；Common gate circuit it is defeated
It is lower to enter impedance, is conveniently matched to 50 impedances；The load impedance of constant-current source is very big, to be conducive to improve low-noise amplifier
Gain, noise-reduction coefficient.
As an improvement of the above technical solution；A kind of integrated electricity of low-consumption wireless radio-frequency front-end towards NB_loT
Road, capacitor C1, C2 are used as cross coupling structure to reduce noise coefficient.
As an improvement of the above technical solution；A kind of integrated electricity of low-consumption wireless radio-frequency front-end towards NB_loT
Road, frequency mixer include frequency mixer metal-oxide-semiconductor M14, M15, M16, M17, frequency mixer capacitor C3, C4, frequency mixer resistance R5, R6, mutual resistance
Received radiofrequency signal is transformed to intermediate-freuqncy signal by amplifier, mixer load；Radiofrequency signal first the left side switch in into
The radiofrequency signal of input is converted into current signal, using the transreactance amplifier of rear class, current signal is become by row frequency spectrum shift
Change voltage signal into；The source electrode of frequency mixer metal-oxide-semiconductor M14, M15 are connect with the end INP, the source electrode of frequency mixer metal-oxide-semiconductor M16, M17 with
The connection of the end INN, the positive terminal of the drain electrode connection transreactance amplifier of frequency mixer metal-oxide-semiconductor M14, M16, frequency mixer metal-oxide-semiconductor M15, M17's
The negative pole end of drain electrode connection transreactance amplifier.
As an improvement of the above technical solution；A kind of integrated electricity of low-consumption wireless radio-frequency front-end towards NB_loT
Road, intermediate-frequency filter include resistance R7, R8, R9, R10, R11, R12, capacitor C5, C6, C7, C8 and amplifier, the intermediate frequency
Filter is located at after frequency mixer, before intermediate frequency amplifier, belongs to a second order active RC filter, for filtering out intermediate-freuqncy signal
The middle higher noise jamming of frequency；The intermediate-frequency filter uses unlimited gain multiple feedback structure；Wherein, R9, R11 and R10,
R12 forms two feedback paths, and feedback capability is related to signal frequency size；RC feedback link can make decaying for filter
More acutely, frequency response is more precipitous at cutoff frequency.
As an improvement of the above technical solution；A kind of integrated electricity of low-consumption wireless radio-frequency front-end towards NB_loT
Road, the intermediate frequency amplifier include that resistance R13, R14, R15, R16, R17, R18, R19, R20, capacitor C9, C10, fully differential are put
Big device OP1, OP2；The intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain being capable of control selections；Due to most increasing
Benefit is very high, and in order to eliminate influence of the DC maladjustment to performance, amplifier joined DC maladjustment and eliminate circuit；Wherein, output letter
Frequency-selective network number by resistance R17, capacitor C10 and resistance R18, capacitor the C9 low pass constituted, obtains straight in output signal
It is lost and adjusts component；Offset voltage is then amplified by amplifier OP2；Finally imbalance component is converted to using resistance R19, R20
The function of current is offset in input port；The ratio of R15, R16 and R13, R14 in circuit determine the basic gain of circuit, R17,
R18 is since it is desired that provide very high resistance value so the field-effect tube of the linear zone using gate source voltage when smaller obtains.
The present invention has the advantage that the present invention provides a kind of integrated electricity of the low-consumption wireless radio-frequency front-end towards NB_loT
Road, compared with traditional receiver, for the circuit in the present invention due to not having using inductance component, structure is simpler, collection
High at degree, frequency range is lower, is suitable for sub 1G frequency range, greatly reduces the cost and power consumption of circuit；It embodies are as follows:
On the one hand, low-noise amplifier is in the first order of receives link, be responsible for the radiofrequency signal come in antenna end into
Row amplification.Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms.Circuit uses two-stage
Gate junction structure altogether, is effectively reduced the influence of the long-acting reply input impedance of ditch, and metal-oxide-semiconductor M7, M8 constitute constant-current source and do active load.Electricity
Hold C1, C2 and is used as cross coupling structure to reduce noise coefficient.Common-mode feedback stable structure output common mode electricity is added in circuit
Pressure.The input impedance of common gate circuit is lower, is conveniently matched to 50 impedances.The load impedance of constant-current source is very big, is conducive to improve low
The gain of noise amplifier, noise-reduction coefficient.
On the other hand, received radiofrequency signal is transformed to intermediate-freuqncy signal by mixer load.Radiofrequency signal is first on the left side
It switchs centering and carries out frequency spectrum shift, the radiofrequency signal of input is converted into current signal, it, will using the transreactance amplifier of rear class
Current signal is transformed into voltage signal.
On the other hand, intermediate-frequency filter is located at after frequency mixer, is a second order active RC filtering before intermediate frequency amplifier
Device is responsible for filtering out the higher noise jamming of frequency in intermediate-freuqncy signal.Intermediate-frequency filter uses unlimited gain multiple feedback structure.
R9, R11 and R10, R12 are two feedback paths, and feedback capability is related to signal frequency size.RC feedback link can make to filter
Device is decayed more violent, and frequency response is more precipitous at cutoff frequency.
On the other hand, intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain can control selection.Due to most increasing
Benefit is very high, and in order to eliminate influence of the DC maladjustment to performance, amplifier joined DC maladjustment and eliminate circuit.Output signal is passed through
The frequency-selective network for the low pass that resistance R17, capacitor C10 and resistance R18, capacitor C9 are constituted, obtains the DC maladjustment in output signal
Component；Offset voltage is then amplified by amplifier OP2；Imbalance component is finally converted to electric current using resistance R19, R20 to make
It is offset used in input port.The ratio of R15, R16 and R13, R14 in circuit determine the basic gain of circuit, R17, R18 because
Need to provide very high resistance value so the field-effect tube of the linear zone using gate source voltage when smaller obtains.
Detailed description of the invention
Fig. 1 is less radio-frequency front end IC system block diagram；
Fig. 2 is amplifier circuit in low noise figure；
Fig. 3 is mixer figure；
Fig. 4 is intermediate-frequency filter circuit diagram；
Fig. 5 is IF amplifier circuit figure.
Specific embodiment
Below in conjunction with attached drawing 1- Fig. 5, the present invention is described in detail, technical solution in the embodiment of the present invention into
Row clearly and completely describes, it is clear that described embodiments are only a part of the embodiments of the present invention, rather than whole realities
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall within the protection scope of the present invention.
The present invention provides a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT by improving herein, can be with
It is practiced as follows；It includes low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；Wirelessly penetrate
The working principle of frequency front end integrated circuit is that antenna end receives radiofrequency signal, is output to mixing by low-noise amplifier amplification
In device, the local oscillation signal mixing orthogonal each other with two-way generates two-way baseband signal；It is filtered out by intermediate-frequency filter useless humorous
Wave signal finally amplifies output in intermediate frequency amplifier.
As shown in Figure 2；Low-noise amplifier is in the first order of receives link, is responsible for the radiofrequency signal come in antenna end
It amplifies.Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；Low noise amplification
The composition of device include metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, capacitor C1, C2, resistance R1,
R2,R3,R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit be total to gate junction structure using two-stage, and the source electrode of M1, M2, M13 are grounded；Resistance
The grid grade of R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit be total to gate junction structure using two-stage, can be effectively reduced the long-acting influence for coping with input impedance of ditch, metal-oxide-semiconductor M7,
M8 constitutes constant-current source and does active load；Capacitor C1, C2 are used as cross coupling structure to reduce noise coefficient；Common mode is added in circuit
Feedback arrangement stabilizes output common mode voltage.The input impedance of common gate circuit is lower, is conveniently matched to 50 impedances.Constant-current source is born
Load impedance is very big, is conducive to the gain for improving low-noise amplifier, noise-reduction coefficient.
As shown in Figure 3；Frequency mixer includes frequency mixer metal-oxide-semiconductor M14, M15, M16, M17, frequency mixer capacitor C3, C4, frequency mixer
Received radiofrequency signal is transformed to intermediate-freuqncy signal by resistance R5, R6, transreactance amplifier, mixer load；Radiofrequency signal is first on a left side
The switch centering on side carries out frequency spectrum shift, and the radiofrequency signal of input is converted into current signal, amplifies using the mutual resistance of rear class
Current signal is transformed into voltage signal by device；The source electrode of frequency mixer metal-oxide-semiconductor M14, M15 are connect with the end INP, frequency mixer metal-oxide-semiconductor
The source electrode of M16, M17 are connect with the end INN, the positive terminal of the drain electrode connection transreactance amplifier of frequency mixer metal-oxide-semiconductor M14, M16, mixing
The negative pole end of the drain electrode connection transreactance amplifier of device metal-oxide-semiconductor M15, M17.
As shown in Figure 4；Intermediate-frequency filter include resistance R7, R8, R9, R10, R11, R12, capacitor C5, C6, C7, C8 and
Amplifier, the intermediate-frequency filter is located at after frequency mixer, before intermediate frequency amplifier, belongs to a second order active RC filter,
For filtering out the higher noise jamming of frequency in intermediate-freuqncy signal；The intermediate-frequency filter uses unlimited gain multiple feedback structure；
Wherein, R9, R11 and R10, R12 form two feedback paths, and feedback capability is related to signal frequency size；RC feedback link
Can make filter decays more violent, and frequency response is more precipitous at cutoff frequency.
As shown in Figure 5；Intermediate frequency amplifier include resistance R13, R14, R15, R16, R17, R18, R19, R20, capacitor C9,
C10, fully-differential amplifier OP1, OP2；The intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain can control choosing
It selects；Since maximum gain is very high, in order to eliminate influence of the DC maladjustment to performance, amplifier joined DC maladjustment and eliminate electricity
Road；Wherein, frequency-selective network of the output signal by resistance R17, capacitor C10 and resistance R18, capacitor the C9 low pass constituted, obtains
DC maladjustment component in output signal；Offset voltage is then amplified by amplifier OP2；Finally utilize resistance R19, R20 will
Imbalance component is converted to the function of current and offsets in input port；The ratio of R15, R16 and R13, R14 in circuit determine circuit
Basic gain, R17, R18 since it is desired that very high resistance value is provided thus the linear zone using gate source voltage when smaller field
Effect pipe obtains.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (5)
1. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, including low-noise amplifier, frequency mixer, intermediate frequency
Filter and intermediate frequency amplifier；The received radiofrequency signal of antenna end is output in frequency mixer by low-noise amplifier amplification, with
Two-way local oscillation signal mixing orthogonal each other, generates two-way baseband signal；Useless harmonic signal is filtered out by intermediate-frequency filter,
Finally amplify output in intermediate frequency amplifier；It is characterized by:
The low-noise amplifier is in the first order of receives link, for amplifying to the radiofrequency signal that antenna end is come in；
Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；
The composition of low-noise amplifier includes metal-oxide-semiconductor M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, electricity
Hold C1, C2, resistance R1, R2, R3, R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit be total to gate junction structure using two-stage, and the source electrode of metal-oxide-semiconductor M1, M2, M13 are grounded；Resistance
The grid grade of R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit is total to gate junction structure using two-stage, can be effectively reduced the influence of the long-acting reply input impedance of ditch, metal-oxide-semiconductor M7, M8 structure
Active load is done at constant-current source；Common-mode feedback stable structure output common mode voltage is added in circuit；The input of common gate circuit hinders
Resist lower, is conveniently matched to 50 impedances；The load impedance of constant-current source is very big, to be conducive to improve the increasing of low-noise amplifier
Benefit, noise-reduction coefficient.
2. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that:
Capacitor C1, C2 are used as cross coupling structure to reduce noise coefficient.
3. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that:
Frequency mixer includes frequency mixer metal-oxide-semiconductor M14, M15, M16, M17, frequency mixer capacitor C3, C4, frequency mixer resistance R5, R6, mutual resistance amplification
Received radiofrequency signal is transformed to intermediate-freuqncy signal by device, mixer load；The first switch on the left side of radiofrequency signal is to middle progress frequency
Spectrum is moved, and the radiofrequency signal of input is converted into current signal, using the transreactance amplifier of rear class, current signal is transformed into
Voltage signal；The source electrode of frequency mixer metal-oxide-semiconductor M14, M15 are connect with the end INP, the source electrode of frequency mixer metal-oxide-semiconductor M16, M17 and the end INN
Connection, the positive terminal of the drain electrode connection transreactance amplifier of frequency mixer metal-oxide-semiconductor M14, M16, the drain electrode of frequency mixer metal-oxide-semiconductor M15, M17
Connect the negative pole end of transreactance amplifier.
4. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that:
Intermediate-frequency filter includes resistance R7, R8, R9, R10, R11, R12, capacitor C5, C6, C7, C8 and amplifier, the intermediate frequency filtering
Device is located at after frequency mixer, before intermediate frequency amplifier, belongs to a second order active RC filter, for filtering out intermediate-freuqncy signal intermediate frequency
The higher noise jamming of rate；The intermediate-frequency filter uses unlimited gain multiple feedback structure；Wherein, R9, R11 and R10, R12
Two feedback paths are formed, feedback capability is related to signal frequency size；What RC feedback link can make filter decays more
Acutely, frequency response is more precipitous at cutoff frequency.
5. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that:
The intermediate frequency amplifier includes resistance R13, R14, R15, R16, R17, R18, R19, R20, capacitor C9, C10, fully-differential amplifier
OP1,OP2；The intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain being capable of control selections；Very due to maximum gain
Height, in order to eliminate influence of the DC maladjustment to performance, amplifier joined DC maladjustment and eliminate circuit；Wherein, output signal passes through
The frequency-selective network for crossing resistance R17, capacitor C10 and resistance R18, the low pass that capacitor C9 is constituted, the direct current obtained in output signal lose
Adjust component；Offset voltage is then amplified by amplifier OP2；Imbalance component is finally converted into electric current using resistance R19, R20
Act on input port counteracting；The ratio of R15, R16 and R13, R14 in circuit determine the basic gain of circuit, R17, R18 because
To need to provide very high resistance value so the field-effect tube of the linear zone using gate source voltage when smaller obtains.
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| CN108828476A (en) * | 2018-06-27 | 2018-11-16 | 重庆湃芯入微科技有限公司 | A kind of application of high frequency limiting circuit in hardware system |
| CN115913263B (en) * | 2022-11-11 | 2024-01-26 | 江苏稻源科技集团有限公司 | Wireless receiver structure |
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| US6850753B2 (en) * | 2002-06-11 | 2005-02-01 | Muchip Co., Ltd | Tunable low noise amplifier and current-reused mixer for a low power RF application |
| US8433272B2 (en) * | 2008-04-15 | 2013-04-30 | Qualcomm Incorporated | Reconfigurable high linearity low noise figure receiver requiring no interstage saw filter |
| CN103187928A (en) * | 2011-12-29 | 2013-07-03 | 国民技术股份有限公司 | Method capable of improving low-frequency flicker noise and high-gain characteristic and active mixer |
| EP2611028A1 (en) * | 2011-12-30 | 2013-07-03 | Dialog Semiconductor GmbH | Multi-stage fully differential amplifier with controlled common mode voltage |
| CN103248324B (en) * | 2013-04-23 | 2016-05-18 | 南京邮电大学 | A kind of high linearity low noise amplifier |
| CN104052513B (en) * | 2014-06-04 | 2016-04-27 | 浙江大学 | A kind of quadrature modulation receiver circuit framework based on injection locking ring oscillator |
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