CN108183718A - A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT - Google Patents
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT Download PDFInfo
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- CN108183718A CN108183718A CN201711373682.0A CN201711373682A CN108183718A CN 108183718 A CN108183718 A CN 108183718A CN 201711373682 A CN201711373682 A CN 201711373682A CN 108183718 A CN108183718 A CN 108183718A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
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Abstract
The invention discloses a kind of low-consumption wireless radio-frequency front-end integrated circuits towards NB_loT；Including low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；In existing receiver structure, receiver structure complexity, the power consumption of superhet are larger, therefore only zero-if architecture is most directly natural；Therefore the present invention is used in the lower frequency ranges of sub 1G, using zero-if architecture to realize low-power consumption and high integration.Simultaneously the problems such as DC maladjustment distinctive for zero-if architecture, the present invention eliminates the influence of DC maladjustment by introducing a kind of technology of direct current negative-feedback.
Description
Technical field
The present invention relates to integrated circuit related fields, specifically belong to a kind of low-consumption wireless radio frequency towards NB_loT
Front end integrated circuit.
Background technology
With the development of the communication technology, mobile communication is from the connection of person to person, to people and object and the company of object and object
It connects and strides forward, all things on earth interconnection is inexorable trend.Wherein NB_loT technologies focus on the Internet of Things market that low-power consumption extensively covers, and have and cover
Gai Guang, the features such as connection is more, rate is low, at low cost, low in energy consumption, framework is excellent.
Existing receiver structure mainly has superheterodyne receiver and zero intermediate frequency reciver.Zero-if architecture is receiver
Most natural, most direct realization method is the scheme that radiofrequency signal is directly down-converted to baseband signal.Zero intermediate frequency reciver knot
Structure block diagram is as shown in Figure 1, including low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier.The radio frequency letter received
It number after low-noise amplifier, is mixed, generates respectively with mutually and orthogonal two-way base band with two-way local oscillation signal orthogonal each other
Signal.Local oscillation signal frequency is identical with radio frequency signal frequency, therefore directly generates baseband signal after being mixed, and the selection of channel and
Gain tuning is carried out in base band, is completed by intermediate-frequency filter and intermediate frequency amplifier.
Wherein, the disclosure of the invention of patent No. 201210007837.X one kind has high three order harmonics rejection ability and a high frequency
The front end integrated circuit structure of rate selectivity radio frequency, including low-noise amplifier and down-conversion mixer, the low noise amplification
Device input terminal connects antenna and matching network, output terminal connection laod network and down-conversion mixer, the matching network and negative
It is high q-factor band-pass circuit to carry lattice network.Due to matching network and the high Q bandpass characteristics of laod network so that entire radio frequency
Front end has good frequency selectivity and interference rejection capability.For adjusting gain or the bandwidth of front end, it is only necessary to change matching
The real part or imaginary part of the base band impedance of network or laod network, that is, the value of resistance or capacitance, performance indicator configuration are flexible.
Before the invention of the patent No. 201610256711.4 provides a kind of RF switch integration module and its integrated approach, radio frequency
Integrated circuit is held, the RF switch integration module includes：Fan-out package moulding compound；At least one making has RF switch electricity
The first die on road, the first die are GaAspHEMT tube cores；At least one making have interface circuit, control circuit the
Two tube cores；Using fan-out package pattern, by GaAspHEMT tube cores and it is integrated with interface circuit and the second tube core of control circuit
Heterogeneous to be integrated in same integration module, solving GaAspHEMT techniques can not integrated interface circuit and control circuit function
Tube core the problem of, using be integrated with RF switch function GaAspHEMT tube cores and be integrated with interface circuit and control circuit
The second tube core heterogeneous integration module, instead of being manufactured in the prior art using SOI technology and being integrated with interface circuit and control
The RF switch chip of circuit, and then improve the performance of RF switch chip.
However, due in existing receiver structure, receiver structure complexity, the power consumption of superhet are larger, therefore
Only zero-if architecture is most directly natural.
Invention content
Therefore, in order to solve above-mentioned deficiency, before the present invention provides a kind of low-consumption wireless radio frequency towards NB_loT herein
Hold integrated circuit.The present invention is used in the lower frequency ranges of sub 1G, using zero-if architecture to realize low-power consumption and height
Integrated level.Simultaneously the problems such as DC maladjustment distinctive for zero-if architecture, the present invention is by introducing a kind of direct current negative-feedback
Technology eliminates the influence of DC maladjustment.
The invention is realized in this way a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT is constructed, packet
Include low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；The radiofrequency signal that antenna end receives is put by low noise
Big device amplification is output in frequency mixer, and the local oscillation signal orthogonal each other with two-way mixing generates two-way baseband signal；Pass through intermediate frequency
Wave filter filters out useless harmonic signal, finally amplifies output in intermediate frequency amplifier；
The low-noise amplifier is in the first order of receives link, for being put to the radiofrequency signal that antenna end is come in
Greatly；Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；It include metal-oxide-semiconductor M1, M2,
M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, capacitance C1, C2, resistance R1, R2, R3, R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit is total to gate junction structure, the source electrode ground connection of metal-oxide-semiconductor M1, M2, M13 using two-stage；
The grid grade of resistance R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit is total to gate junction structure using two-stage, can effectively reduce ditch it is long-acting reply input impedance influence, metal-oxide-semiconductor M7,
M8 forms constant-current source and does active load；Common-mode feedback stable structure output common mode voltage is added in circuit.Common gate circuit it is defeated
It is relatively low to enter impedance, conveniently matches 50 impedances.The load impedance of constant-current source is very big, is conducive to improve the increasing of low-noise amplifier
Benefit, noise-reduction coefficient.
As an improvement of the above technical solution；
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, capacitance C1, C2 are used as cross-couplings
Structure is to reduce noise coefficient.
As an improvement of the above technical solution；
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, frequency mixer include metal-oxide-semiconductor M1, M2,
The radiofrequency signal of reception is transformed to intermediate frequency and believed by M3, M4, capacitance C1, C2, resistance R1, R2, transreactance amplifier, mixer load
Number；The radiofrequency signal of input is converted into current signal, then pass through by radiofrequency signal first in the switch on the left side to middle carry out frequency spectrum shift
Current signal is transformed into voltage signal by the transreactance amplifier of grade later；The source electrode of metal-oxide-semiconductor M1, M2 are connect with INP ends, metal-oxide-semiconductor
The source electrode of M3, M4 are connect with INN ends, the positive terminal of the drain electrode connection transreactance amplifier of metal-oxide-semiconductor M1, M3, the leakage of metal-oxide-semiconductor M2, M4
Pole connects the negative pole end of transreactance amplifier.
As an improvement of the above technical solution；
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, intermediate-frequency filter include resistance R1,
R2, R3, R4, R5, R6, capacitance C1, C2, C3, C4 and amplifier, the intermediate-frequency filter are located at after frequency mixer, and intermediate frequency is put
Before big device, belong to a second order active RC filter, for filtering out the higher noise jamming of frequency in intermediate-freuqncy signal；In described
Frequency wave filter uses unlimited gain multiple feedback structure；Wherein, R3, R5 and R4, R6 form two feedback paths, feedback capability
It is related to signal frequency size；What RC feedback link can make wave filter decays more violent, frequency response at cutoff frequency more
Add precipitous.
As an improvement of the above technical solution；
A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, the intermediate frequency amplifier include resistance
R1, R2, R3, R4, R5, R6, R7, R8, capacitance C1, C2, fully-differential amplifier OP1, OP2；The intermediate frequency amplifier is based on OP
Fully-differential amplifier, gain being capable of control selections；Since maximum gain is very high, in order to eliminate shadow of the DC maladjustment to performance
It rings, amplifier adds DC maladjustment and eliminates circuit；Wherein, output signal is by resistance R5, capacitance C2 and resistance R6, capacitance C1
The frequency-selective network of the low pass of composition obtains the DC maladjustment component in output signal；Imbalance electricity is then amplified by amplifier OP2
Pressure；Imbalance component finally is converted to the function of current using resistance R7, R8 to offset in input port；R3, R4 and R1, R2 in circuit
Ratio determine the basic gain of circuit, R5, R6 are since it is desired that provide very high resistance value so comparing using gate source voltage
Hour the field-effect tube of linear zone obtain.
The invention has the advantages that：The present invention provides a kind of low-consumption wireless radio-frequency front-end towards NB_loT and integrates electricity
Road, compared with traditional receiver, for the circuit in the present invention due to not having using inductance component, structure is simpler, collection
High into degree, frequency range is relatively low, suitable for sub 1G frequency ranges, greatly reduces the cost and power consumption of circuit；It is embodied as：
On the one hand, low-noise amplifier is in the first order of receives link, be responsible for the radiofrequency signal that antenna end is come in into
Row amplification.Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms.Circuit uses two-stage
Gate junction structure altogether, effectively reduces the influence of the long-acting reply input impedance of ditch, and metal-oxide-semiconductor M7, M8 form constant-current source and do active load.Electricity
Hold C1, C2 and be used as cross coupling structure to reduce noise coefficient.Common-mode feedback stable structure output common mode electricity is added in circuit
Pressure.The input impedance of common gate circuit is relatively low, conveniently matches 50 impedances.The load impedance of constant-current source is very big, is conducive to improve low
The gain of noise amplifier, noise-reduction coefficient.
On the other hand, the radiofrequency signal of reception is transformed to intermediate-freuqncy signal by mixer load.Radiofrequency signal is first on the left side
It switchs centering and carries out frequency spectrum shift, the radiofrequency signal of input is converted into current signal, it, will using the transreactance amplifier of rear class
Current signal is transformed into voltage signal.
On the other hand, intermediate-frequency filter is located at after frequency mixer, is a second order active RC filtering before intermediate frequency amplifier
Device is responsible for filtering out the noise jamming that frequency is higher in intermediate-freuqncy signal.Intermediate-frequency filter uses unlimited gain multiple feedback structure.
R3, R5 and R4, R6 are two feedback paths, and feedback capability is related to signal frequency size.RC feedback link can make wave filter
Decay more violent, frequency response is more precipitous at cutoff frequency.
On the other hand, intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain can be with control selections.Due to most increasing
Benefit is very high, and in order to eliminate influence of the DC maladjustment to performance, amplifier adds DC maladjustment and eliminates circuit.Output signal is passed through
The frequency-selective network of low pass that resistance R5, capacitance C2 and resistance R6, capacitance C1 are formed obtains the DC maladjustment point in output signal
Amount；Offset voltage is then amplified by amplifier OP2；Imbalance component finally is converted to the function of current using resistance R7, R8 to exist
It offsets input port.The ratio of R3, R4 and R1, R2 in circuit determine the basic gain of circuit, and R5, R6 are since it is desired that provide very
High resistance value is so the field-effect tube of linear zone using gate source voltage when smaller obtains.
Description of the drawings
Fig. 1 is less radio-frequency front end IC system block diagram；
Fig. 2 is amplifier circuit in low noise figure；
Fig. 3 is mixer figure；
Fig. 4 is intermediate-frequency filter circuit diagram；
Fig. 5 is IF amplifier circuit figure.
Specific embodiment
Below in conjunction with attached drawing 1- Fig. 5, the present invention is described in detail, to the technical solution in the embodiment of the present invention into
Row clearly and completely describes, it is clear that described embodiment is only the reality of part of the embodiment of the present invention rather than whole
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, shall fall within the protection scope of the present invention.
The present invention provides a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT herein by improving, can be with
It is practiced as follows；It includes low-noise amplifier, frequency mixer, intermediate-frequency filter and intermediate frequency amplifier；Wirelessly penetrate
The operation principle of frequency front end integrated circuit is that antenna end receives radiofrequency signal, and mixing is output to by low-noise amplifier amplification
In device, the local oscillation signal orthogonal each other with two-way mixing generates two-way baseband signal；It is filtered out by intermediate-frequency filter useless humorous
Wave signal finally amplifies output in intermediate frequency amplifier.
As shown in Figure 2；Low-noise amplifier is in the first order of receives link, is responsible for the radiofrequency signal come in antenna end
It is amplified.Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；It includes metal-oxide-semiconductor
M1, M2, M3, M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, capacitance C1, C2, resistance R1, R2, R3, R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit is total to gate junction structure, the source electrode ground connection of M1, M2, M13 using two-stage；Resistance
The grid grade of R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit is total to gate junction structure using two-stage, can effectively reduce ditch it is long-acting reply input impedance influence, metal-oxide-semiconductor M7,
M8 forms constant-current source and does active load；Capacitance C1, C2 are used as cross coupling structure to reduce noise coefficient；Common mode is added in circuit
Feedback arrangement stabilizes output common mode voltage.The input impedance of common gate circuit is relatively low, conveniently matches 50 impedances.Constant-current source is born
Load impedance is very big, is conducive to improve the gain of low-noise amplifier, noise-reduction coefficient.
As shown in Figure 3；Frequency mixer includes metal-oxide-semiconductor M1, M2, M3, M4, capacitance C1, C2, resistance R1, R2, transreactance amplifier,
The radiofrequency signal of reception is transformed to intermediate-freuqncy signal by mixer load；Radiofrequency signal first removes middle progress frequency spectrum in the switch on the left side
It moves, the radiofrequency signal of input is converted into current signal, using the transreactance amplifier of rear class, current signal is transformed into voltage
Signal；The source electrode of metal-oxide-semiconductor M1, M2 are connect with INP ends, and the source electrode of metal-oxide-semiconductor M3, M4 are connect with INN ends, the drain electrode of metal-oxide-semiconductor M1, M3
Connect the positive terminal of transreactance amplifier, the negative pole end of the drain electrode connection transreactance amplifier of metal-oxide-semiconductor M2, M4.
As shown in Figure 4；Intermediate-frequency filter includes resistance R1, R2, R3, R4, R5, R6, capacitance C1, C2, C3, C4, amplifier,
Intermediate-frequency filter is located at after frequency mixer, is a second order active RC filter before intermediate frequency amplifier, is responsible for filtering out intermediate frequency letter
The higher noise jamming of frequency in number.Intermediate-frequency filter uses unlimited gain multiple feedback structure.R3, R5 and R4, R6 are two
Feedback path, feedback capability are related to signal frequency size；What RC feedback link can make wave filter decays more violent, frequency
Response is more precipitous at cutoff frequency.
As shown in Figure 5；Intermediate frequency amplifier includes resistance R1, R2, R3, R4, R5, R6, R7, R8, capacitance C1, C2, fully differential
Amplifier OP1, OP2, intermediate frequency amplifier are the fully-differential amplifiers based on OP, and gain can be with control selections.Due to maximum gain
Very high, in order to eliminate influence of the DC maladjustment to performance, amplifier adds DC maladjustment and eliminates circuit.Output signal is by electricity
The frequency-selective network of low pass that R5, capacitance C2 and resistance R6, capacitance C1 are formed is hindered, obtains the DC maladjustment component in output signal；
Offset voltage is then amplified by amplifier OP2；Imbalance component finally is converted to the function of current using resistance R7, R8 to input
Mouth is offset.The ratio of R3, R4 and R1, R2 in circuit determine the basic gain of circuit, and R5, R6 are since it is desired that provide very high
Resistance value is so the field-effect tube of linear zone using gate source voltage when smaller obtains.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide range caused.
Claims (5)
1. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT, including low-noise amplifier, frequency mixer, intermediate frequency
Wave filter and intermediate frequency amplifier；The radiofrequency signal that antenna end receives is output to by low-noise amplifier amplification in frequency mixer, with
Two-way local oscillation signal mixing orthogonal each other, generates two-way baseband signal；Useless harmonic signal is filtered out by intermediate-frequency filter,
Finally amplify output in intermediate frequency amplifier；
It is characterized in that：
The low-noise amplifier is in the first order of receives link, for being amplified to the radiofrequency signal that antenna end is come in；
Amplifier circuit in low noise amplifies main part by signal level and common-mode feedback part forms；It include metal-oxide-semiconductor M1, M2, M3,
M4, M5, M6, M7, M8, M9, M10, M11, M12, M13, capacitance C1, C2, resistance R1, R2, R3, R4；
Metal-oxide-semiconductor M1, M2, M5, M6 are total to grid, and circuit is total to gate junction structure, the source electrode ground connection of metal-oxide-semiconductor M1, M2, M13 using two-stage；Resistance
The grid grade of R1, R2 connection metal-oxide-semiconductor M3, M4；
Circuit is total to gate junction structure using two-stage, can effectively reduce the influence of the long-acting reply input impedance of ditch, metal-oxide-semiconductor M7, M8 structure
Active load is done into constant-current source；Common-mode feedback stable structure output common mode voltage is added in circuit；The input resistance of common gate circuit
It is anti-relatively low, conveniently match 50 impedances；The load impedance of constant-current source is very big, so as to be conducive to improve the increasing of low-noise amplifier
Benefit, noise-reduction coefficient.
2. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that：
Capacitance C1, C2 are used as cross coupling structure to reduce noise coefficient.
3. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that：
Frequency mixer includes metal-oxide-semiconductor M1, M2, M3, M4, capacitance C1, C2, resistance R1, R2, transreactance amplifier, and mixer load is by reception
Radiofrequency signal is transformed to intermediate-freuqncy signal；Radiofrequency signal believes the radio frequency of input first in the switch on the left side to middle carry out frequency spectrum shift
Number current signal is converted into, using the transreactance amplifier of rear class, current signal is transformed into voltage signal；Metal-oxide-semiconductor M1, M2's
Source electrode is connect with INP ends, and the source electrode of metal-oxide-semiconductor M3, M4 are connect with INN ends, the drain electrode connection transreactance amplifier of metal-oxide-semiconductor M1, M3
Positive terminal, the negative pole end of the drain electrode connection transreactance amplifier of metal-oxide-semiconductor M2, M4.
4. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that：
Intermediate-frequency filter includes resistance R1, R2, R3, R4, R5, R6, capacitance C1, C2, C3, C4 and amplifier, the intermediate-frequency filter
After frequency mixer, before intermediate frequency amplifier, belong to a second order active RC filter, for filtering out frequency in intermediate-freuqncy signal
Higher noise jamming；The intermediate-frequency filter uses unlimited gain multiple feedback structure；Wherein, R3, R5 and R4, R6 form two
Feedback paths, feedback capability are related to signal frequency size；What RC feedback link can make wave filter decays more violent, frequency
Rate response is more precipitous at cutoff frequency.
5. a kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT according to claim 1, it is characterised in that：
The intermediate frequency amplifier includes resistance R1, R2, R3, R4, R5, R6, R7, R8, capacitance C1, C2, fully-differential amplifier OP1, OP2；
The intermediate frequency amplifier is the fully-differential amplifier based on OP, and gain being capable of control selections；Since maximum gain is very high, in order to disappear
Except influence of the DC maladjustment to performance, amplifier adds DC maladjustment and eliminates circuit；Wherein, output signal by resistance R5,
The frequency-selective network for the low pass that capacitance C2 and resistance R6, capacitance C1 are formed obtains the DC maladjustment component in output signal；It is then logical
Cross amplifier OP2 amplification offset voltages；Imbalance component finally is converted to the function of current using resistance R7, R8 to support in input port
Disappear；The ratio of R3, R4 and R1, R2 in circuit determine the basic gain of circuit, and R5, R6 are since it is desired that provide very high resistance
Value is so the field-effect tube of linear zone using gate source voltage when smaller obtains.
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| CN201711373682.0A CN108183718B (en) | 2017-12-19 | 2017-12-19 | A kind of low-consumption wireless radio-frequency front-end integrated circuit towards NB_loT |
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| Publication number | Publication date |
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| CN108183718B (en) | 2019-09-24 |
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