CN108183157A - A kind of light emitting diode and preparation method - Google Patents
A kind of light emitting diode and preparation method Download PDFInfo
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- CN108183157A CN108183157A CN201711241467.5A CN201711241467A CN108183157A CN 108183157 A CN108183157 A CN 108183157A CN 201711241467 A CN201711241467 A CN 201711241467A CN 108183157 A CN108183157 A CN 108183157A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0025—Processes relating to coatings
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Abstract
The invention discloses a kind of light emitting diode and preparation methods, belong to optoelectronic fabrication techniques field.The present invention includes substrate, n-type GaN layer, active layer, p-type GaN layer, transparency conducting layer, p-electrode, n-electrode, passivation layer, Bragg reflecting layer, transparency conducting layer is layered in p-type GaN layer, p-electrode is set over transparent conductive layer, passivation layer is at the more than structure surface exposed place opposite with substrate, Bragg reflecting layer is on passivation layer, by the way that passivation layer is set as first refractive index layer, second index layer, third reflect rate layer, second index layer includes multiple convex lens unit, and the refractive index of the second index layer is more than the structure of first refractive index layer and third reflect rate layer, so that the light on large angle incidence to Bragg reflecting layer structure is answered originally, it is being incident on Bragg reflecting layer with more vertical angle after convex lens mirror unit, improve the efficiency of light extraction of diode.
Description
Technical field
The present invention relates to optoelectronic fabrication techniques field, more particularly to a kind of light emitting diode and preparation method.
Background technology
LED (Light Emitting Diode, light emitting diode) has many advantages, such as small, long lifespan, low in energy consumption, mesh
Before be widely used in automobile signal light, traffic lights, display screen and lighting apparatus.
A kind of existing LED chip mainly includes the epitaxial layer of substrate and growth on substrate, and p-type is formed on epitaxial layer
One-time electrode and N-shaped one-time electrode are also covered with one layer of passivation layer on epitaxial layer, Bragg reflection are provided on passivation layer
Layer, p-type second electrode and N-shaped second electrode, p-type second electrode and N-shaped second electrode difference are provided on Bragg reflecting layer
It is connect by via with p-type one-time electrode and N-shaped one-time electrode.Bragg reflecting layer includes alternately stacked high-index material
Layer and low refractive index material layer, Bragg reflecting layer have higher reflectivity for the light of specific wavelength, so as to incite somebody to action
Light is reflected to one side of substrate, improves the luminous efficiency of LED.
Since the light that LED chip is sent out is towards all directions, when light incidence Bragg reflecting layer, have
The incident angle very little of light, the incident angle of some light are then very big.Bragg reflecting layer is for the light of incidence angles degree
The reflectivity of line is also different, and Bragg reflecting layer can preferably reflect the small light of incident angle, for incident angle
Larger light writes that reflectivity is then relatively low, therefore existing Bragg reflecting layer is to the raising limitation of the light emission rate of LED.
Invention content
In order to improve the luminous efficiency of LED, an embodiment of the present invention provides a kind of light emitting diode and preparation methods.It is described
Technical solution is as follows：
A kind of light emitting diode, the light emitting diode include substrate, form epitaxial layer over the substrate, are formed in
N-shaped one-time electrode and p-type one-time electrode on the epitaxial layer, covering passivation layer on said epitaxial layer there, be covered in it is described
Bragg reflecting layer on passivation layer, the n types second electrode being formed on the Bragg reflecting layer and p-type second electrode, institute
It states N-shaped second electrode to connect with the N-shaped one-time electrode by via, the p-type second electrode passes through via and the p-type one
Sub-electrode connects,
It is characterized in that, the passivation layer includes stacking gradually first refractive index layer, the second folding on said epitaxial layer there
Rate layer and third reflect rate layer are penetrated, the refractive index of second index layer is more than the first refractive index layer and the third
The refractive index of index layer, second index layer include the multiple convex lens unit with layer arrangement, each convex lens
The surface of the close first refractive index layer of unit and the surface of the close third reflect rate layer are spherical crown surface, each described
The orthographic projection of convex lens mirror unit over the substrate is rounded, on the direction of substrate is parallel to, each convex lens list
Member is gradually thinning from centre to edge thickness.
Optionally, second index layer uses Ti3O5、TiO2、ZrO2、HfO2Any one of be made.
Optionally, the refractive index of second index layer is 2.2~2.6, and the refractive index of the first refractive index layer is
1.4~1.7, the refractive index of the third reflect rate layer is 1.4~1.7.
Optionally, the ratio of the radius of the radius and spherical crown surface of the orthographic projection of the convex lens mirror unit over the substrate
Be worth is 0.50~0.97.
Optionally, a diameter of 4 μm~12 μm of the orthographic projection of the convex lens mirror unit over the substrate.
Optionally, the spacing between the edge of the adjacent convex lens mirror unit is 5 μm~10 μm.
Optionally, the thickness of second index layer is 30~100nm.
Optionally, the orthographic projection of the surface far from the substrate of the passivation layer over the substrate is located at the substrate
Interior, the Bragg reflecting layer is covered in the separate surface of the substrate and the multiple sides of the passivation layer of the passivation layer
On.
A kind of preparation method of light emitting diode, the method includes：
One substrate is provided；
Grown epitaxial layer over the substrate；
N-shaped one-time electrode and p-type one-time electrode are made on said epitaxial layer there；
Passivation layer is formed on said epitaxial layer there；
Bragg reflecting layer is formed on the passivation layer；
N-shaped second electrode and p-type second electrode are formed on the Bragg reflecting layer,
Wherein, the N-shaped second electrode is connect by via with the N-shaped one-time electrode, and the p-type second electrode passes through
Via is connect with the p-type one-time electrode, the passivation layer include stacking gradually first refractive index layer on said epitaxial layer there,
Second index layer and third reflect rate layer, the refractive index of second index layer are more than the first refractive index layer and institute
The refractive index of third reflect rate layer is stated, second index layer includes the multiple convex lens unit with layer arrangement, the convex lens
The orthographic projection of mirror unit over the substrate is rounded, and on the direction of substrate is parallel to, each convex lens mirror unit is therefrom
Between it is gradually thinning to edge thickness.
Optionally, passivation layer is formed on said epitaxial layer there, including：
First refractive index film layer is formed on said epitaxial layer there；
Processing is patterned to the first refractive index film layer, to form the first figure in the first refractive index film layer
Shape, first figure include multiple crown face grooves of array arrangement；
The second refractivity film layer is formed in the first refractive index film layer；
Processing is patterned to second refractivity film layer, to form the second figure on second refractivity film layer
Shape, the second graph include multiple arc surfaces protrusion of array arrangement, the arc surface protrusion and the crown face groove one
One corresponds to arrangement；
Third reflect rate film layer is formed on second refractivity film layer.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：By the way that passivation layer is set as be laminated the
One index layer, the second index layer and third reflect rate layer, wherein the refractive index of the second index layer is more than first refractive
The refractive index of rate layer and third reflect rate layer, the second index layer include the multiple convex lens unit with layer arrangement, convex lens list
Member orthographic projection on substrate is rounded, on the direction of substrate is parallel to, each convex lens mirror unit therefrom between to edge thickness
Gradually thinning, each convex lens mirror unit is equivalent to a convex lens, and the light of directive Bragg reflecting layer can be converged,
Make more light with smaller incidence angle directive Bragg reflecting layer, so that Bragg reflecting layer can reflect more light
Line, so as to improve the luminous efficiency of light emitting diode.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure chart of light emitting diode provided in an embodiment of the present invention；
Fig. 2 is the spatial relation figure of convex lens mirror unit and substrate provided in an embodiment of the present invention；
Fig. 3 is the structure diagram of another light emitting diode provided in an embodiment of the present invention；
Fig. 4 is the index path of convex lens mirror unit provided in an embodiment of the present invention；
Fig. 5 is a kind of preparation flow figure of light emitting diode provided in an embodiment of the present invention；
Fig. 6~7 are the preparation process schematic diagrames of light emitting diode provided in an embodiment of the present invention；
Fig. 8 is a kind of preparation flow figure of passivation layer provided in an embodiment of the present invention；
Fig. 9 is a kind of etching process schematic diagram of first refractive index layer provided in an embodiment of the present invention；
Figure 10 is a kind of structure diagram of mask for being used to etch first refractive index layer provided in an embodiment of the present invention；
Figure 11 is a kind of preparation process schematic diagram of second index layer provided in an embodiment of the present invention；
Figure 12 is a kind of structure diagram of mask for the second index layer of etching provided in an embodiment of the present invention；
Figure 13 is a kind of etching process schematic diagram of second index layer provided in an embodiment of the present invention；
Figure 14 is a kind of structure diagram of passivation layer for preparing completion provided in an embodiment of the present invention；
Figure 15~17 are a kind of preparation process schematic diagrames of light emitting diode provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structure chart of light emitting diode provided in an embodiment of the present invention.As shown in Figure 1, light emitting diode packet
Include substrate 1, formed epitaxial layer 20 on substrate 1, the N-shaped one-time electrode 8 being formed on epitaxial layer 20 and p-type one-time electrode 7,
The passivation layer 9 that is covered on epitaxial layer 20, is formed in Bragg reflecting layer at the Bragg reflecting layer 10 being covered on passivation layer 9
N-shaped second electrode 11 and p-type second electrode 14 on 10, N-shaped second electrode 11 are connect by via with N-shaped one-time electrode 8, p
Type second electrode 14 is connect by via with p-type one-time electrode 7.
Passivation layer 9 includes being sequentially laminated on first refractive index layer 91 on epitaxial layer 20, the second index layer 92 and the
Three index layers 93, the refractive index of the second index layer 92 are more than the refraction of first refractive index layer 91 and third reflect rate layer 93
Rate.Second index layer 92 includes close first of multiple convex lens the unit 92a, each convex lens mirror unit 92a with layer arrangement
The surface (spherical crown surface 92b as shown in Figure 1) of index layer 91 and the surface of close third reflect rate layer 93 are (such as institute in Fig. 1
The spherical crown surface 92c shown) it is spherical crown surface, the orthographic projections of each convex lens mirror unit 92a on substrate 1 are rounded, are being parallel to lining
On the direction at bottom 1, each convex lens mirror unit 92a is gradually thinning from centre to edge thickness.
By being set as including substrate by light emitting diode, forming epitaxial layer on substrate, be formed on epitaxial layer
One-time electrode, the passivation layer being covered on epitaxial layer cover Bragg reflecting layer on the passivation layer and are formed in Prague
Second electrode on reflecting layer, second electrode are connect by via with one-time electrode.Wherein, passivation layer includes stacking gradually outside
Prolong first refractive index layer, the second index layer and the third reflect rate layer on layer so that the refractive index of the second index layer is big
In the refractive index of first refractive index layer and third reflect rate layer, and the second index layer includes the multiple convex lens with layer arrangement
Unit so that the light on large angle incidence to Bragg reflecting layer structure is answered originally, by light occurs during convex lens mirror unit
Road deviates, and can be incident on Bragg reflecting layer with more vertical angle, so that Bragg reflecting layer can reflect
This some light improves the efficiency of light extraction of diode.
As shown in Figure 1, epitaxial layer 20 can include growing n-type GaN layer 2 on substrate 1, active layer 3, p-type GaN successively
Layer 4 and transparency conducting layer 6, n-type GaN layer 2, active layer 3, p-type GaN layer 4 and transparency conducting layer 6, N-shaped one-time electrode 8 are set
In n-type GaN layer, p-type one-time electrode 7 is arranged on transparency conducting layer 6.
As shown in Figure 1, in the present embodiment, active layer 3 can be multi-quantum pit structure, and active layer 3 includes alternately stacked
InGaN layer 31 and GaN layer 32, InGaN layer 31 and 32 alternately stacked periodicity of GaN layer can be 6-15, the thickness of InGaN layer 31
Degree can be 2-5nm.
It should be noted that the structure of active layer 3 shown in Fig. 1 is only to illustrate, not limiting in active layer 3
The number of plies of InGaN layer 31 and GaN layer 32.
Optionally, the second index layer 92 uses Ti3O5、TiO2、ZrO2、HfO2Any one of be made, these types of material
There is higher refractive index, requirement of second index layer to high refractive index can be met.
Preferably, the second index layer 92 uses Ti3O5Or TiO2It is made.
Optionally, SiO may be used in first refractive index layer 912、MgO、Al2O3Any one of be made, third reflect rate layer
93 may be used SiO2、MgO、Al2O3Any one of be made.These types of material has preferable antioxidation, can be to luminous two
Pole pipe internal structure plays a protective role.Preferably, first refractive index layer 91 and third reflect rate layer 93 use identical material
It is made.Select the cost of manufacture that identical material makes first refractive index layer and the second index layer can reduce diode.
Preferably, SiO can be used in first refractive index layer 91 and third reflect rate layer 932It is made.
Optionally, the refractive index of the second index layer 92 is 2.2~2.6, the refractive index of first refractive index layer 91 for 1.4~
1.7, the refractive index of third reflect rate layer 93 is 1.4~1.7.By the refractive index of the second index layer is set as 2.2~
2.6, the refractive index of first refractive index layer and third reflect rate layer is disposed as 1.4~1.7, the second index layer and first refractive
It cooperates between rate layer and third reflect rate layer, to reach better spotlight effect.
Optionally, in embodiments of the present invention, the refractive index of first refractive index layer 91 and the refraction of third reflect rate layer 93
Rate can be identical.
Optionally, the thickness of the second index layer 92 is 30~100nm.The thickness of second index layer is set into model thus
Enclosing can make the light extraction effect of the second index layer best.If the thickness of the second index layer is less than 30~100nm, etching
The spherical crown surface of convex lens mirror unit afterwards can be too small, is unfavorable for the convergence of light, if the thickness of the second index layer is blocked up, and can band
Carry out the Intrinsic Gettering of larger material, be unfavorable for the taking-up of light.
In the present embodiment, thickness value of the thickness of the second index layer 92 for thickness maximum on convex lens mirror unit 92a.
Optionally, the diameter of the orthographic projections of convex lens mirror unit 92a on substrate 1 can be 4 μm~12 μm.In order to convex lens
The making of mirror unit.Convex lens mirror unit is by being dried after being carried out to photoresist so that the side hair of the parallel substrate surface of photoresist
Raw slope change, so as to obtain the etching curved surface of the spherical crown surface of required correspondence convex lens mirror unit.If the diameter of convex lens mirror unit
It is too small, it can be difficult to realize the making of convex lens mirror unit by photoetching technique.If diameter is excessive, it is difficult to be formed on a photoresist convex
The required surface radian of spherical crown surface of lens unit.
Optionally, the spacing between the edge of adjacent convex lens mirror unit 92a is 5 μm~10 μm.In convex lens mirror unit 92a
Size it is certain in the case of, the spacing at the edge of adjacent convex lens mirror unit 92a is set as 5 μm~10 μm in order to convex
The making of lens unit.The spacing at the edge of adjacent convex lens mirror unit, which crosses conference, causes the density of convex lens mirror unit low, reduces
Extraction to light, the spacing at the edge of adjacent convex lens mirror unit is too small, can be sent out again between convex lens mirror unit and convex lens mirror unit
Raw interference, influences extraction of the convex lens mirror unit to light.
Optionally, the orthographic projection of the surface of the separate substrate of passivation layer 9 on substrate is located in substrate, Bragg reflecting layer
10 are covered on the surface of the separate substrate 1 of passivation layer 9 and multiple sides of passivation layer 9.By the way that Bragg reflecting layer is covered
On the surface of the separate substrate 1 of passivation layer and multiple sides of passivation layer so that Bragg reflecting layer is capable of reflecting light line
Range bigger.
In addition, the side wall 20a of epitaxial layer 20 and the angle theta of substrate 1 are more than 90 °, can cause in this way from the side of epitaxial layer
The light that wall projects, which is preferably irradiated on Bragg reflecting layer, to be reflected.
Optionally, 6 material of transparency conducting layer is ITO (Indium Tin Oxides, tin indium oxide), and ITO has higher
Light transmission rate and good electric conductivity, it is possible to reduce the absorption to light is conducive to improve luminous efficiency.
In the present embodiment, Bragg reflecting layer 10 includes the high refractive index material layer and low-index material of alternating growth
Layer, per floor height refractive index material and the optical thickness of every layer of low refractive index material layer is active layer emitted light wavelength
1/4。
Optionally, Fig. 2 is the spatial relation figure of convex lens mirror unit and substrate provided in an embodiment of the present invention, such as Fig. 2
It is shown, the ratio of the radius R of the radius r and spherical crown surface 92b of the orthographic projections of convex lens mirror unit 92a on substrate 1 for 0.50~
0.97.The ratio of the radius of the orthographic projection of convex lens mirror unit on substrate and the radius of spherical crown surface is set as 0.50~0.97,
Convenient for convex lens mirror unit making while can also reach preferable spotlight effect.
Fig. 3 is the structure diagram of another light emitting diode provided in an embodiment of the present invention, as shown in figure 3, p-type GaN
Current barrier layer 5 is additionally provided between layer 4 and transparency conducting layer 6, current barrier layer 5 is conducive to the extending transversely of electric current.
Fig. 4 is the index path of convex lens mirror unit provided in an embodiment of the present invention, as shown in figure 4, answering large angle incidence originally
Light onto Bragg reflecting layer structure shifts when passing through convex lens mirror unit 92a, can be with approximately perpendicular angle
Incident Bragg reflecting layer.
Fig. 5 is a kind of preparation flow figure of light emitting diode provided in an embodiment of the present invention.As shown in figure 5, the preparation side
Method includes：
S1：One substrate is provided.
In the present embodiment, substrate 1 is Sapphire Substrate.
S2：Grown epitaxial layer on substrate.
S3：N-shaped one-time electrode and p-type one-time electrode are made on epitaxial layer.
S4：Passivation layer is formed on epitaxial layer.
S5：Bragg reflecting layer is formed on the passivation layer.
S6：N-shaped second electrode and p-type second electrode are formed on Bragg reflecting layer.
Wherein, N-shaped second electrode is connect by via with N-shaped one-time electrode, and p-type second electrode passes through via and p-type one
Sub-electrode connects, and passivation layer includes first refractive index layer, the second index layer and the third folding being sequentially laminated on epitaxial layer
Rate layer is penetrated, the refractive index of the second index layer is more than the refractive index of first refractive index layer and third reflect rate layer, the second refractive index
Layer includes the multiple convex lens unit with layer arrangement, and the orthographic projection of convex lens mirror unit on substrate is rounded, is being parallel to substrate
Direction on, each convex lens mirror unit therefrom between it is gradually thinning to edge thickness.
By being set as including substrate by light emitting diode, forming epitaxial layer on substrate, be formed on epitaxial layer
One-time electrode, the passivation layer being covered on epitaxial layer cover Bragg reflecting layer on the passivation layer and are formed in Prague
Second electrode on reflecting layer, second electrode are connect by via with one-time electrode.Wherein, passivation layer includes stacking gradually outside
Prolong first refractive index layer, the second index layer and the third reflect rate layer on layer so that the refractive index of the second index layer is big
In the refractive index of first refractive index layer and third reflect rate layer, and the second index layer includes the multiple convex lens with layer arrangement
Unit so that the light on large angle incidence to Bragg reflecting layer structure is answered originally, by light occurs during convex lens mirror unit
Road deviates, and can be incident on Bragg reflecting layer with more vertical angle, so that Bragg reflecting layer can reflect
This some light improves the efficiency of light extraction of diode.
Fig. 6~7 are the preparation process schematic diagrames of light emitting diode provided in an embodiment of the present invention.
Specifically, step S2 can include：
Grown epitaxial layer on substrate.
As shown in fig. 6, grown epitaxial layer 20, epitaxial layer 20 include growing N-shaped on substrate 1 successively on substrate 1
GaN layer 2, active layer 3, p-type GaN layer 4 and transparency conducting layer 6.
In addition, can also be grown between p-type GaN layer 4 and transparency conducting layer 6 has current barrier layer 5.
Step S3 can include：
Groove is made on epitaxial layer.
P-type one-time electrode is made over transparent conductive layer, and N-shaped one-time electrode is made in the n-type GaN layer in groove.
As shown in fig. 7, making fluted 17 on epitaxial layer 20, to expose n-type GaN layer 2, N-shaped one-time electrode 8 is arranged on
In n-type GaN layer 2, p-type one-time electrode 7 is arranged on transparency conducting layer 6.
Fig. 8 is a kind of preparation flow figure of passivation layer provided in an embodiment of the present invention, and Fig. 9~13 are that the embodiment of the present invention carries
The passivation layer structure manufacturing process schematic diagram of confession.Step S4 can include according to Fig. 9~13：
S41：First refractive index film layer is formed on epitaxial layer.
Fig. 9 is a kind of etching process schematic diagram of first refractive index layer provided in an embodiment of the present invention, as shown in Fig. 9, outside
Prolong and first refractive index film layer 911 is formed on layer 20, the mode that deposition may be used in first refractive index film layer 911 is formed in extension
On layer 20.
S42：Processing is patterned to first refractive index film layer 911, to form first in first refractive index film layer 911
Figure.
Wherein, the first figure includes multiple crown face groove 911a of array arrangement.
Photoresist 12 can be specifically coated in first refractive index film layer, using mask 15 shown in Fig. 10 to photoresist 12
It is exposed, crown face groove is formed in first refractive index film layer 911 after the development of photoresist 12, then by etching technics
911a.Optionally, photoresist 12 is positive photoetching rubber.
S43：The second refractivity film layer 921 is formed in first refractive index film layer 911.
As shown in figure 11, the second refractivity film layer 921 is formed in first refractive index film layer 911.
Second refractivity film layer 921 can be formed by way of deposition.
S44：Processing is patterned to the second refractivity film layer 921, to form second on the second refractivity film layer 921
Figure.
Wherein, second graph includes multiple arc surface protrusion 921a of array arrangement, arc surface protrusion 921a and arc surface
Groove 911a corresponds arrangement.
Photoresist 13 can be specifically coated on the second refractivity film layer, using the mask 16 shown in Figure 12 to photoresist 13
It is exposed, after developing to photoresist 13, then forms arc surface protrusion on the second refractivity film layer 921 by etching technics
921a.As shown in figure 13.
Optionally, photoresist 13 is negative photoresist.
S45：Third reflect rate film layer 931 is formed on the second refractivity film layer 921.
As shown in figure 14, it is formed with third reflect rate film layer 931 on the second refractivity film layer 921.
Third reflect rate film layer 931 can be formed by way of deposition.
The structure for making the light emitting diode after passivation layer is as shown in figure 15.
Figure 15~17 are a kind of preparation process schematic diagrames of light emitting diode provided in an embodiment of the present invention.
As shown in figure 16, after the making of complete passivation layer, Bragg reflecting layer 10 is formed on passivation layer 9.
Via can be made on Bragg reflecting layer before step S6 is performed, so that N-shaped second electrode 14 and p
Type second electrode 11 can be connect with N-shaped one-time electrode 8 and p-type one-time electrode 8 respectively by via.
After having made N-shaped second electrode 14 and p-type second electrode 11, you can obtain light emitting diode as shown in figure 17.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of light emitting diode, the light emitting diode includes substrate, forms epitaxial layer over the substrate, is formed in institute
State N-shaped one-time electrode and p-type one-time electrode on epitaxial layer, covering passivation layer on said epitaxial layer there, be covered in it is described blunt
Change the Bragg reflecting layer on layer, the N-shaped second electrode being formed on the Bragg reflecting layer and p-type second electrode, the n
Type second electrode is connect by via with the N-shaped one-time electrode, and the p-type second electrode is primary by via and the p-type
Electrode connects,
It is characterized in that, the passivation layer includes stacking gradually first refractive index layer on said epitaxial layer there, the second refractive index
Layer and third reflect rate layer, the refractive index of second index layer are more than the first refractive index layer and the third reflect
The refractive index of rate layer, second index layer include the multiple convex lens unit with layer arrangement, each convex lens mirror unit
Be spherical crown surface close to the surface of the first refractive index layer and close to the surface of the third reflect rate layer, it is each described convex
The orthographic projection of lens unit over the substrate is rounded, on the direction of substrate is parallel to, each convex lens mirror unit
It is gradually thinning from centre to edge thickness.
2. light emitting diode according to claim 1, which is characterized in that second index layer uses Ti3O5、TiO2、
ZrO2、HfO2Any one of be made.
3. light emitting diode according to claim 1, which is characterized in that the refractive index of second index layer is 2.2
~2.6, the refractive index of the first refractive index layer is 1.4~1.7, and the refractive index of the third reflect rate layer is 1.4~1.7.
4. light emitting diode according to claim 1, which is characterized in that the convex lens mirror unit is over the substrate just
The ratio of the radius of projection and the radius of the spherical crown surface is 0.50~0.97.
5. light emitting diode according to claim 1, which is characterized in that the convex lens mirror unit is over the substrate just
A diameter of 4 μm~12 μm of projection.
6. light emitting diode according to claim 1, which is characterized in that between the edge of the adjacent convex lens mirror unit
Spacing be 5 μm~10 μm.
7. light emitting diode according to claim 1, which is characterized in that the thickness of second index layer for 30~
100nm。
8. light emitting diode according to claim 1, which is characterized in that the surface far from the substrate of the passivation layer
Orthographic projection over the substrate is located in the substrate, and the Bragg reflecting layer is covered in the separate described of the passivation layer
On the surface of substrate and multiple sides of the passivation layer.
9. a kind of preparation method of light emitting diode, which is characterized in that the method includes：
One substrate is provided；
Grown epitaxial layer over the substrate；
N-shaped one-time electrode and p-type one-time electrode are made on said epitaxial layer there；
Passivation layer is formed on said epitaxial layer there；
Bragg reflecting layer is formed on the passivation layer；
N-shaped second electrode and p-type second electrode are formed on the Bragg reflecting layer,
Wherein, the N-shaped second electrode is connect by via with the N-shaped one-time electrode, and the p-type second electrode passes through via
It is connect with the p-type one-time electrode, the passivation layer includes stacking gradually first refractive index layer on said epitaxial layer there, second
Index layer and third reflect rate layer, the refractive index of second index layer are more than the first refractive index layer and described the
The refractive index of three index layers, second index layer include the multiple convex lens unit with layer arrangement, the convex lens list
Member orthographic projection over the substrate is rounded, on the direction of substrate is parallel to, each convex lens mirror unit therefrom between to
Edge thickness is gradually thinning.
10. preparation method according to claim 9, which is characterized in that passivation layer is formed on said epitaxial layer there, including：
First refractive index film layer is formed on said epitaxial layer there；
Processing is patterned to the first refractive index film layer, to form the first figure in the first refractive index film layer,
First figure includes multiple crown face grooves of array arrangement；
The second refractivity film layer is formed in the first refractive index film layer；
Processing is patterned to second refractivity film layer, to form second graph on second refractivity film layer,
The second graph includes multiple arc surfaces protrusion of array arrangement, and the arc surface protrusion and the crown face groove one are a pair of
It should arrange；
Third reflect rate film layer is formed on second refractivity film layer.
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