CN108183144B - Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell - Google Patents
Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell Download PDFInfo
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- CN108183144B CN108183144B CN201711442471.8A CN201711442471A CN108183144B CN 108183144 B CN108183144 B CN 108183144B CN 201711442471 A CN201711442471 A CN 201711442471A CN 108183144 B CN108183144 B CN 108183144B
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- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 238000012360 testing method Methods 0.000 title claims abstract description 9
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 7
- 238000005516 engineering process Methods 0.000 title claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 25
- 239000003292 glue Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000002346 layers by function Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a laser scribing technology for improving the test accuracy of a cadmium telluride thin film solar cell, discloses a method for accurately defining the area of the cadmium telluride thin film solar cell, and belongs to the technical field of structural design of compound semiconductor thin film solar cells. The method is characterized in that laser scribing is carried out on the CdTe thin film solar cell with a complete device structure by using pulse Nd-YAG laser, so that the problem that the transverse collection of incident light caused by the existence of the CdTe material of the residual absorbing layer at the edge of the metal electrode causes the virtual high current can be eliminated, and the influence of the residual CdTe at the edge on the parallel resistance of the series resistor of the device can be eliminated at the same time, so that the method is economically and feasible, and the area of the CdTe thin film solar cell is accurately defined, thereby obtaining a more reliable cell efficiency curve.
Description
Technical Field
The invention belongs to the technical field of structural design of compound semiconductor thin film solar cells.
Background
CdTe is a direct bandgap semiconductor with an energy gap of 1.45eV, very close to the optimal energy gap required by the solar cell. The CdTe has strong absorption to visible light, and the absorption coefficient is as high as-105cm-1For sunlight with light energy higher than the forbidden band width of CdTe, CdTe in 1 micron thickness can absorb 99% of light effectively, and is suitable for use as the material of solar cell absorbing layer. The first example of n-CdTe/p-Cu with 7% photoelectric conversion efficiency was reported by Cusano in 19632-xSince Te heterojunction thin film solar cell, CdTe material has attracted attention of students and developed p-CdTe/n-CdS heterojunction cellThe method is developed to date. The maximum conversion efficiency of the small-area CdTe thin film solar cell reaches 22.1%, and the small-area CdTe thin film solar cell becomes one of the key research objects in the field of solar cells. Although the conversion efficiency of CdTe thin film solar cells has exceeded 20%, there is still a large difference from its theoretical conversion efficiency, and the intrinsic physical mechanism of some energy loss is not clear. Therefore, the research on the intrinsic physical mechanism of CdTe solar cell and module is necessary. The accurate definition of the area of a unit cell without introducing other damages that may affect the cell efficiency is a basic premise for further optimizing the intrinsic physical mechanism of the cell efficiency. It is particularly important to develop a convenient and repeatable small-area cell fabrication process. However, no detailed report on the related process has been made.
Disclosure of Invention
YAG laser (532 nm wavelength) is used for small-area preparation of devices/components with complete cell structures. The method is not only suitable for (1) a battery with a high current density caused by transverse collection due to the fact that the area of the device is defined by a mask plate and the absorption layer residue near the electrode is introduced, but also suitable for (2) a battery with a distorted efficiency caused by damage of the local electrode of the battery without packaging and protecting. In addition, the technology is also suitable for (3) scribing a large-area battery into a unit small battery with strictly defined area.
The technical route of the step (1) is that SnO is uniformly coated on the CdTe in sequence according to the preparation process of a standard CdTe solar cell2Depositing a window layer/buffer layer, an absorption layer and a back contact layer on a substrate of the F transparent conductive film, carrying out corresponding post-treatment on each film layer, and finally plating a gold electrode on the area of the complete battery structure with the expected stroke by using a mask technology by using a vacuum evaporation method. The periphery of the battery prepared by the preparation method is completely covered by other layers, and the traditional method for separating single small-area unit batteries is to coat black glue on a gold electrode, clean a peripheral back contact layer and a light absorption layer below the peripheral back contact layer by using bromomethanol after the black glue is solidified, and finally wash off the black glue by using a toluene solution to obtain the unit battery basically close to the area of a back electrode. However, in the actual test process, there is no effective method for precisely covering the electrode portion due to the application of the black pasteThe residual absorption layer can absorb sunlight and contribute photogenerated carriers in the testing process, so that the short-circuit current density in the testing result is high.
In the case of (2), the complete cell prepared in a laboratory or a factory is unobstructed to introduce electrode damage, especially at the edge of the cell, during storage or testing without encapsulation, thereby affecting the photovoltaic performance of the cell. Such damage can cause erroneous determinations of battery device stability, particularly during environmental weatherability testing.
The above-mentioned situation (3) is generally a problem that a factory has to face when performing fine analysis and characterization of a battery module mass-produced on a production line. The unit cell area acceptable by many basic characterization means related to solar cell device physics, carrier transport and the like is often 1cm2 and below, so how to divide a large-area cell into small cells and accurately define the area of the small cells without introducing other physical or chemical damages is significant in seeking to further optimize the cell performance.
The invention discloses a defocusing scribing method for accurately defining the area of a CdTe thin film solar cell with a complete device structure by using 532 laser. Specifically, a Nd-YAG pulse laser is used as a light source, the power of the laser on a battery device is adjusted by adjusting the position of a beam expander, the aperture of a diaphragm, the distance between a laser exit port and a workbench, the repetition frequency, the power factor and the like, and the process parameters and the working conditions for completely removing other functional film layers under the condition of not damaging the transparent conductive film layer are confirmed.
Drawings
Fig. 1 shows a process of cell preparation and laser scribing, wherein 1 is a transparent conductive oxide, 2 is a buffer layer and a window layer, 3 is a cadmium telluride absorbing layer, 4 is a back contact layer, 5 is a mask sheet, 6 is a metal back electrode, 121 is a metal back electrode preparation process, 122 is a conventional black glue-coated cell preparation process, and 123 is a laser scribing process.
Fig. 2 is a laser scribing process.
Fig. 3 is a diagram of a battery LBIC scribed using a pulsed laser.
Fig. 4 is an I-V curve and characteristic parameters of the cell before and after the laser scribing process.
Detailed Description
Referring to fig. 1 and 2, the steps 121 and 122 of fig. 1 are conventional processes for preparing CdTe thin film solar cells with small area, that is, after a metal back electrode is deposited by a mask, the back electrode is covered by black glue, the black glue is cured, and then functional layers except the electrode are washed away by a bromomethanol solution, and finally the black glue is removed. 123 refers to the definition of a smaller and more precise cell area by laser scribing than by masking on the basis of 121 and 122. In addition, as shown in figure 2, the whole scribing system and the scribing process are accurately controlled by a computer, parameters such as scribing modes, graphs, laser power factors and the like can be adjusted as required, the repeatability is high, and the area is accurate.
Claims (1)
1. A laser scribing method for improving the test accuracy of a cadmium telluride thin film solar cell is characterized in that a small-area cadmium telluride thin film solar cell is separated by Nd-YAG pulse laser, and the method comprises the following steps:
step 1: depositing a window layer/buffer layer, an absorption layer and a back contact layer on a substrate uniformly coated with a SnO, namely an F transparent conductive film, performing corresponding post-treatment on each film layer, and finally plating a gold electrode on a region expected to form a complete cell structure by using a mask technology through a vacuum evaporation method;
step 2: firstly, carefully and completely coating and covering the back electrode part by using black glue, washing other functional layers except the electrode by using a bromomethanol solution after the black glue is solidified, and finally removing the black glue;
and step 3: on the basis of the step 2, defining a smaller and more accurate battery area than a mask method by laser scribing, and inwardly scribing 1-2 mm on the edge of the originally formed gold electrode;
separating the CdTe thin film solar cell with the complete structure by using pulse laser;
during scribing, the aperture of a diaphragm is 3mm, the relative height of a galvanometer workbench is 408mm, the power factor is 400, the repetition frequency is 15kHz, the scribing speed is 600mm/s, the on/off light delay time is 80/120 mu s respectively, and the method is realized by using a defocusing laser scribing technology and adjusting power parameters, so that the transparent conductive layer can not be damaged while the other functional film layers are completely divided and regular sections are formed.
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| CN201711442471.8A CN108183144B (en) | 2017-12-27 | 2017-12-27 | Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell |
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| CN201711442471.8A CN108183144B (en) | 2017-12-27 | 2017-12-27 | Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell |
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| CN108183144A CN108183144A (en) | 2018-06-19 |
| CN108183144B true CN108183144B (en) | 2020-10-16 |
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| CN112582493B (en) * | 2020-12-11 | 2022-05-10 | 中国科学院大连化学物理研究所 | Four-quadrant illumination sensor and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494250A (en) * | 2007-10-22 | 2009-07-29 | 应用材料股份有限公司 | Photovoltaic fabrication process monitoring and control using diagnostic devices |
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| CN106229377B (en) * | 2016-08-17 | 2017-11-10 | 中山瑞科新能源有限公司 | It is a kind of to prevent hull cell from sweeping short-circuit method behind side |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101494250A (en) * | 2007-10-22 | 2009-07-29 | 应用材料股份有限公司 | Photovoltaic fabrication process monitoring and control using diagnostic devices |
Non-Patent Citations (1)
| Title |
|---|
| 《激光刻划制备集成碲化镉薄膜太阳电池的研究》;岳磊 等;《四川大学学报(自然科学版)》;20050628;第42卷(第3期);全文 * |
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