CN108183144A - A kind of Laser scribing techniques for improving cadmium telluride film solar cells test accuracy - Google Patents
A kind of Laser scribing techniques for improving cadmium telluride film solar cells test accuracy Download PDFInfo
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- CN108183144A CN108183144A CN201711442471.8A CN201711442471A CN108183144A CN 108183144 A CN108183144 A CN 108183144A CN 201711442471 A CN201711442471 A CN 201711442471A CN 108183144 A CN108183144 A CN 108183144A
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- film solar
- solar cells
- solar cell
- cadmium telluride
- cdte
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- 238000000034 method Methods 0.000 title claims abstract description 25
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 238000012360 testing method Methods 0.000 title abstract description 8
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 229910052793 cadmium Inorganic materials 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 238000013461 design Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- -1 cadmium tellurides Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 16
- 239000003292 glue Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention is a kind of Laser scribing techniques for improving cadmium telluride film solar cells test accuracy, discloses a kind of accurate method for defining cadmium telluride film solar cells area, belongs to the structure-design technique field of compound semiconductor film solar cell.By using pulse Nd:YAG laser carries out laser grooving and scribing to the CdTe thin film solar cell with complete device structure, the presence that metal electrode edge residual absorption layer material CdTe can be eliminated causes the lateral collection of incident light to lead to electric current virtual height, eliminate edge remnants cadmium tellurides in the same time influences caused by devices in series resistor coupled in parallel resistance, so as to provide a kind of economically viable accurate cadmium telluride film solar cells area that defines so as to obtain the method for more believable battery efficiency curve.
Description
Technical field
The invention belongs to the structure-design technique fields of compound semiconductor film solar cell.
Background technology
CdTe is a kind of direct band-gap semicondictor, energy gap 1.45eV, the optimal taboo needed for very close solar cell
Bandwidth.CdTe is very strong to the absorption of visible ray, and absorption coefficient is up to ~ 105cm-1, to light energy higher than CdTe energy gaps
For sunlight, the CdTe of 1 μ m-thick can effectively absorb 99% light, be to be highly suitable as solar cell absorbed layer
Material.From the n-CdTe/p-Cu of Cusano report first cases photoelectric conversion efficiency 7% in 19632-xThe Te hetero-junction thin-film sun
Since battery, CdTe material just by focus of attention and develops p-CdTe/n-CdS hetero-junction solar cells and continues to use and be developed so far.
The highest transfer efficiency of small area CdTe thin film solar cell is up to 22.1% at present, it has also become the emphasis of area of solar cell
One of research object.Although CdTe thin film solar cell transfer efficiency is more than 20%, between its theoretical conversion efficiencies still
There is larger difference, the inherent physical mechanism of some energy losses is still not clear.Therefore in CdTe solar cells and component in object
The research of reason mechanism is very necessary.The damage of battery efficiency may be influenced to the area of accurate definition unit battery by not introducing other simultaneously
Evil is that further investigation has an impact the basic premise that battery efficiency advanced optimizes inherent physical mechanism.Develop it is a kind of it is convenient can
The small area battery preparation technique repeated is particularly important.However not yet someone carries out the play-by-play of related process.
Invention content
It is proposed that with pulse Nd:YAG laser（Wavelength 532nm）To formed device/component of completed cell structure into
It is prepared by row small areaization.This method is applicable not only to (1) and defined device area but because of absorbed layer near electrode with mask plate
Remnants, which introduce lateral collection, leads to the battery of current density virtual height, and suitable for (2) unencapsulated protection battery localizing electrode damage
Efficiency caused by wound is distorted battery.In addition, the technology is also applied for (3) by area battery delineation into needing strict difinition area
Unit baby battery.
The technology path of above-mentioned (1) is uniformly to be coated with SnO successively according to standard CdTe solar cells preparation flow2:F
Window layer/buffer layer, absorbed layer, back contact are deposited on the substrate of transparent conductive film and corresponding rear place is carried out to each film layer
Reason finally plates gold electrode in the region for it is expected stroke completed cell structure with mask technique with vacuum vapor deposition method.Such preparation
For battery ambient prepared by method completely by other layers of covering, the method that tradition detaches single small area element cell is in gold electrode
Back contact around and following light-absorption layer after black glue curing with bromine methanol are cleaned up, finally use first by upper coating black glue
Black glue is washed away the i.e. available element cell substantially close to back electrode area by benzole soln.However during actual test, by
Temporarily electrode section is precisely covered without effective method, all there is the range of 1mm or so around back electrode in coating black glue
CdTe layer is remaining, this is that CdTe efficiency of solar cell is caused to test one of the main reason for inaccurate, and remaining absorbed layer is being surveyed
Sunlight can be absorbed during examination, photo-generated carrier is contributed, makes test result short circuit currents density virtual height.
Under above-mentioned (2) situation, the completed cell of laboratory or factory's preparation is in unencapsulated preservation or test process
In, it is unobstructed to introduce electrode damage, especially in battery edge, so as to influence the photovoltaic performance of battery.Especially carrying out ring
During the weatherability test of border, such damage can cause the erroneous judgement to battery device stability.
Above-mentioned (3) situation is usually that factory carries out the battery component produced in batches on production line palpus during explication de texte characterization
In face of the problem of.The acceptable element cell of the basis characterization method such as many related solar cell device physics, carrier transport
Area is often in 1cm2 and hereinafter, therefore how while being divided into baby battery by area battery, precisely defining its area
Do not introduce other physically or chemically damage seek advanced optimize battery performance in terms of it is significant.
The invention discloses it is a kind of with 532 laser the CdTe thin film solar cell of complete device structure is carried out again it is accurate
Define the defocus rose method of area.Specifically, Nd is used:YAG pulse lasers are as light source, by adjusting beam expanding lens position, light
Distance, the adjustment modes such as repetition rate and power factor are fought each other in battery device between late aperture, laser emitting mouth and workbench
On power be adjusted, it is thus identified that the work for all removing other functional film layers under conditions of transparent conductive film layer is not injured
Skill parameter and operating condition.
Description of the drawings
Fig. 1 element cells prepare and laser grooving and scribing flow, wherein 1 transparent conductive oxide, 2 buffer layers and Window layer, 3 telluriums
Cadmium absorbed layer, 4 back contacts, 5 mask pieces, 6 metal back electrodes, 121 metal back electrode preparation process, 122 tradition coatings are black
Glue preparation unit battery process, 123 laser scribing process.
Fig. 2 is laser scribing process.
Fig. 3 is the battery LBIC figures delineated using pulse laser.
Fig. 4 is the I-V curve and characterisitic parameter of laser grooving and scribing battery before and after the processing.
Specific embodiment
Embodiment is referring to Fig. 1 Fig. 2, and the 121 of Fig. 1,122 steps are the systems that tradition is small area CdTe thin film solar cell
Standby technique, that is, after deposited metal back electrode with mask plate, first by back electrode part, with black glue, carefully coating covers completely,
Other functional layers except electrode are washed away with bromine methanol solution after black glue curing, finally remove black glue.123 refer to 121
On the basis of 122, one is defined compared with the more accurate cell area of mask method smaller with laser grooving and scribing.In the gold electricity being originally defined
Inwardly 2mm is arrived in delineation 1 at pole edge, and the element cell fracture delineated under the conditions of this is neat, no residual absorption layer interference, this
Outside, as shown in Fig. 2, entire scoring system and portraying technique and accurately being controlled via computer, delineation pattern, figure, laser power
The parameters such as the factor can all be adjusted on demand, and repeatability is high, and area is accurate.
Claims (5)
1. this patent is characterized in utilizing Nd:YAG pulse lasers separating facet accumulates cadmium telluride film solar cells, this is a kind of essence
The new technology of certainly adopted element cell area, including：
The CdTe thin film solar cell of complete structure is separated using pulse laser；
Delineated using pulse laser separate CdTe thin film solar cell become with can explication small area battery technology
Details.
2. as described in claim 1, it is characterized in that carrying out delineation point to the CdTe thin film solar cell with complete device structure
Every.
3. as described in claim 1, it is characterized in that completing thoroughly dividing and form the same of neat section for other functional film layers
When, transparency conducting layer can not be damaged.
4. as described in claim 1, it is characterized in that using defocus Laser scribing techniques, realize that right will by adjusting power parameter
Seek the scribing process described in 3.
5. as described in claim 1, it is characterized in that selecting the aperture of the diaphragm when delineating as 3mm, galvanometer workbench relative altitude
408mm, power factor 400, repetition 15kHz delineate speed 600mm/s, and the delay of ON/OFF light is respectively 80/120 μ s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442471.8A CN108183144B (en) | 2017-12-27 | 2017-12-27 | Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711442471.8A CN108183144B (en) | 2017-12-27 | 2017-12-27 | Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108183144A true CN108183144A (en) | 2018-06-19 |
| CN108183144B CN108183144B (en) | 2020-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711442471.8A Active CN108183144B (en) | 2017-12-27 | 2017-12-27 | Laser scribing technology for improving test accuracy of cadmium telluride thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582493A (en) * | 2020-12-11 | 2021-03-30 | 中国科学院大连化学物理研究所 | Four-quadrant illumination sensor and preparation method thereof |
Citations (2)
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|---|---|---|---|---|
| CN101425550A (en) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | Process testers and testing methodology for thin-film photovoltaic devices |
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-
2017
- 2017-12-27 CN CN201711442471.8A patent/CN108183144B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101425550A (en) * | 2007-10-22 | 2009-05-06 | 应用材料股份有限公司 | Process testers and testing methodology for thin-film photovoltaic devices |
| CN101494250A (en) * | 2007-10-22 | 2009-07-29 | 应用材料股份有限公司 | Photovoltaic fabrication process monitoring and control using diagnostic devices |
| CN106229377A (en) * | 2016-08-17 | 2016-12-14 | 中山瑞科新能源有限公司 | A kind of prevent hull cell from sweeping the method for short circuit behind limit |
Non-Patent Citations (1)
| Title |
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| 岳磊 等: "《激光刻划制备集成碲化镉薄膜太阳电池的研究》", 《四川大学学报(自然科学版)》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582493A (en) * | 2020-12-11 | 2021-03-30 | 中国科学院大连化学物理研究所 | Four-quadrant illumination sensor and preparation method thereof |
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| CN108183144B (en) | 2020-10-16 |
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