CN115884643A - Edge cleaning insulation method and system for thin film battery - Google Patents
Edge cleaning insulation method and system for thin film battery Download PDFInfo
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Abstract
The invention provides an edge cleaning insulation method for a thin film battery, which is characterized in that after an electrode is prepared on a thin film battery piece and before edge cleaning insulation is carried out by utilizing first laser, a scribing step is added; the scribing step specifically comprises: scribing at the junction of the insulation area to be edge cleaned and the effective area of the battery to form an isolation strip of the insulation area to be edge cleaned and the effective area of the battery, wherein the depth of the isolation strip is consistent with that of the edge cleaning insulation; the edge cleaning insulation specifically comprises the following steps: and scanning the insulating area to be edge-cleaned by using the first laser, so that the heat affected zone of the light spot of the first laser is overlapped with all or part of the isolation strip and does not exceed the isolation strip. According to the invention, by means of scribing to form the isolation belt before the traditional laser edge cleaning insulation step, the problems of serious surface protrusion and surface electrode stripping caused by laser edge cleaning are reduced or solved, the conversion efficiency and stability of the battery are improved, and the appearance of the battery is optimized.
Description
Technical Field
The invention belongs to the field of perovskite battery processing, and particularly relates to a thin film battery edge cleaning insulation method and system.
Background
Perovskite is named under the name of Russian mineralogist Lev Perovski and is a perovskite crystal (CaTiO, the earliest discovered perovskite crystal) 3 ) Materials of the same crystal structure. The perovskite solar cell is a solar cell using a perovskite-type organic metal halide semiconductor as a light absorbing material, and belongs to a third generation solar cell, which is also referred to as a new concept solar cell. The theoretical limit of conversion efficiency for crystalline silicon solar cells is 29.4%. At present, the reported conversion efficiency of a crystalline silicon solar cell laboratory reaches 26.6 percent at most. As the conversion efficiency of the crystalline silicon solar cell is closer to the limit, the perovskite solar cell has an exposed corner. Since 2017, the perovskite solar cell technology is listed as the popular nomination of the nobel chemical prize, the market gradually pays attention to the commercial value of the perovskite solar cell technology. In recent two years, the development process of perovskite solar cell technology is accelerated, and small-scale mass production is realized by existing enterprises. With the background of ever-updating records of conversion efficiency, perovskite solar cells have become the globally recognized most promising new generation of photovoltaic materials. However, the commercialization of perovskite cells faces the problem that the large-area preparation of perovskite cells can still maintain higher cell conversion efficiency and higher stability. To solve this problem, the perovskite battery large-area preparation process needs to be continuously improved and optimized.
The perovskite battery structure can be roughly divided into two types of positive (n-i-p) structure and inverted (p-i-n) structure, and the battery structure is simple. Taking an inverse planar perovskite battery as an example, the following are sequentially performed from bottom to top: glass, transparent electrode (TCO or TCO), electron transport layer, perovskite layer, hole transport layer, metal electrode. The perovskite solar cell has high photoelectric conversion efficiency, simple manufacturing process and low production cost and material cost. The core photoelectric conversion material has the characteristics of low price and solution preparation, is convenient to prepare by adopting a roll-to-roll technology without vacuum conditions, and is easier to produce than the traditional silicon battery.
The large-area preparation of the perovskite battery also needs a laser scribing process required by cadmium telluride, copper indium gallium selenide and amorphous silicon thin-film battery components to realize series-parallel connection and edge clearing insulation among the perovskite batteries. The existing edge trimming insulation technology of the perovskite battery is to use infrared laser to directly perform edge trimming insulation, as shown in fig. 1 to 3, however, since a laser heat affected zone 3 exists around a laser spot 2, the surface of the battery edge is severely protruded and the surface electrode is peeled off beside a laser scanning zone 4 due to heat influence, and protrusions 1-1 caused by laser heat influence and protrusions 1-2 brought by an edge film layer are formed, which affect the appearance, electrical property and stability of the battery piece 1. The raised and peeled electrodes affect the conductivity of the electrodes and reduce the effective area of the battery, thus seriously lowering the conversion efficiency of the battery. In addition, the raised and stripped electrodes are also an unstable factor, and in the subsequent process, if the raised electrodes fall off and fall on other positions of the battery, the current leakage can be caused, and even the whole battery can be damaged in a serious condition.
Disclosure of Invention
The invention mainly aims to provide an edge cleaning insulation method and system for a thin film battery, which can be used for reducing the problems of serious surface protrusion and surface electrode stripping caused by laser edge cleaning.
The technical scheme adopted by the invention is as follows: a thin film battery edge cleaning insulation method is characterized in that after an electrode is prepared on a thin film battery piece and before edge cleaning insulation is carried out by utilizing first laser, a scribing step is added;
the scribing step specifically comprises the following steps: scribing at the junction of the insulation area to be edge cleaned and the effective area of the battery to form an isolation strip of the insulation area to be edge cleaned and the effective area of the battery, wherein the depth of the isolation strip is consistent with that of the edge cleaning insulation;
the edge cleaning insulation specifically comprises the following steps: the method comprises the steps that a first laser is used for scanning an insulating area to be edge cleaned, when a light spot of the first laser is close to an isolation strip for scanning, the light spot of the first laser is at least tangent to the edge of the isolation strip or partially positioned in the isolation strip, and therefore the heat affected area of the light spot of the first laser is enabled to be overlapped with all or part of the isolation strip and not to exceed the isolation strip.
According to the method, the scribing step is completed by adopting a metal needle.
According to the method, the scribing step is completed by adopting the second laser, and the spot size of the second laser is 10-100 mu m.
According to the method, the second laser is infrared, ultraviolet or green laser, and the pulse width is picosecond, femtosecond or nanosecond.
According to the method, the laser wavelength of the second laser is 532nm, the pulse width is 20ps, and the spot size is 15 mu m.
A preparation method of a solar cell module comprises the edge cleaning and insulating method of the thin film cell.
According to the preparation method, the preparation method is used for preparing the perovskite solar cell module and specifically comprises the following steps:
s1, selecting a transparent glass substrate, and cleaning and drying the transparent glass substrate;
s2, preparing a conductive film on a transparent glass substrate;
s3, scribing the conductive film;
s4, preparing an electron transport layer, a perovskite layer and a hole transport layer in sequence;
s5, scribing a functional layer consisting of the hole transport layer, the perovskite layer and the electron transport layer;
s6, preparing an electrode;
s7, scribing at the junction of the insulating area needing edge cleaning and the effective area of the battery, and cutting the electrode, the hole transport layer, the perovskite layer, the electron transport layer and the conductive film to form an isolation strip of the insulating area to be edge cleaned and the effective area of the battery;
s8, repeatedly scanning the insulating area to be edge cleaned by using first laser, wherein during the first scanning, the light spot heat affected area of the first laser is only overlapped with all or part of the isolation belt;
and S9, electrode wiring and packaging to finish the manufacture of the perovskite solar cell module.
The system comprises a memory, a processor and a computer program which is stored on the memory and can run on the processor, wherein the processor executes the computer program to realize the steps of the thin film battery edge cleaning insulation method.
The invention has the following beneficial effects: by the mode of scribing to form the isolation belt before the traditional laser edge cleaning insulation step, the problems of serious surface protrusion and surface electrode stripping caused by laser edge cleaning are reduced or solved, the conversion efficiency and stability of the battery are improved, and the appearance of the battery is optimized.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a schematic structural diagram of a battery piece before and after edge clearing insulation.
FIG. 2 is a schematic diagram of the edge deletion step in the prior art.
Fig. 3 is a schematic top view of the battery plate during edge deletion insulation (corresponding to the first step in fig. 2).
Fig. 4 is a schematic structural diagram of a scribing step according to an embodiment of the present invention.
Fig. 5 is a top view of fig. 4.
Fig. 6 is a schematic structural diagram of an edge deletion step according to an embodiment of the present invention.
Fig. 7 is a detailed schematic view of fig. 4.
In the figure: 1-cell piece, 1-1-projection caused by laser heat influence, 1-2-projection brought by an edge film layer, 2-laser spot, 3-laser heat influence area, 4-laser scanning area, 5-isolation zone, 6-edge clearing area, 11-transparent glass substrate, 12-conductive film, 13-electron transport layer, 14-perovskite layer, 15-hole transport layer and 16-electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides an edge cleaning insulation method for a thin film battery, which is characterized in that after an electrode is prepared on a thin film battery piece and before edge cleaning insulation is carried out by utilizing first laser, a scribing step is added;
as shown in fig. 4 and 5, the scribing step specifically includes: scribing at the junction of an insulation area needing edge cleaning and a battery effective area of a battery piece 1 to form an isolation strip 5 of the insulation area to be edge cleaned and the battery effective area, wherein the depth of the isolation strip 5 is consistent with the depth of edge cleaning insulation;
as shown in fig. 6, the edge deletion insulation specifically includes: the method comprises the steps that first laser is used for scanning an insulating area to be edge-cleared, when a light spot 2 of the first laser is close to an isolation strip for scanning, the light spot 2 of the first laser is at least tangent to the edge of the isolation strip 5 or partially positioned in the isolation strip 5, so that a laser heat affected zone 3 of the light spot 2 of the first laser is overlapped with all or part of the isolation strip 5 and does not exceed the isolation strip 5, and an effective area is not affected.
Generally, edge cleaning insulation utilizes a first laser to scan an insulation area to be edge cleaned, the first scanning is performed from the position close to an effective area, and then the scanning is performed from the position far away from the effective area in sequence until the scanning of the edge cleaning insulation area is completed. Referring again to fig. 5, the laser spot 2 of the first laser of the first scan is tangent to the edge of the isolation strip 5, or partially within the isolation strip 5, and the laser heat affected zone 3 of the laser spot 2 overlaps all or part of the isolation strip 5 without exceeding the isolation strip 5, so that the effective area is not affected. Of course, when the first laser scans the area to be edge-cleared, the first laser may start scanning from the area far from the effective area until the first laser reaches the area close to the effective area, and the requirement may be satisfied when the first laser is scanned for the last time when the first laser is close to the effective area.
More specifically, the scribing step may be performed using a metal needle. The scribing step can also be completed by adopting a second laser, and the spot size of the second laser is 10-100 mu m. The spot size here means: when the light spot is a circular light spot, the size refers to the diameter; when the spot is square, the size refers to the side length or width.
Specifically, the second laser is infrared, ultraviolet or green laser, and the pulse width is picosecond, femtosecond or nanosecond.
More preferably, the laser wavelength of the second laser is 532nm, the pulse width is 20ps, and the spot is a circular spot with the diameter of 15 μm. The circular spot may also be replaced by a spot of other shape.
When the scribing step is completed by using the second laser, the laser wavelength of the second laser is 532ns, the pulse width is 20ps, and the light spot is a circular light spot with the diameter of 15 mu m. The circular spot may also be replaced by a spot of other shape.
The first laser is preferably infrared laser, the light spot is a circular light spot with the diameter of more than 10-100 mu m, the light spot of the first laser is preferably not smaller than the light spot size of the second laser, and the laser wavelength is 1064nm. The circular spot may be replaced by a spot of other shape.
A preparation method of a perovskite solar cell module realized by using the thin film cell edge clearing insulation method comprises the following steps: as shown in fig. 7, S1, selecting a transparent glass substrate 11, and cleaning and drying the substrate; s2, preparing a conductive film 12 on a transparent glass substrate; s3, scribing the conductive film; s4, preparing an electron transport layer 13, a perovskite layer 14 and a hole transport layer 15 in sequence; s5, scribing a functional layer consisting of the hole transport layer 15, the perovskite layer 14 and the electron transport layer 13; s6, preparing an electrode 16; s7, scribing at the junction of the insulating area needing edge cleaning and the effective area of the battery, and cutting the electrode 16, the hole transport layer 15, the perovskite layer 14, the electron transport layer 13 and the conductive film 12 to form an isolation strip 5 of the insulating area to be edge cleaned and the effective area of the battery; s8, sequentially scanning the insulating area to be edge-cleared by using first laser, wherein during the first scanning (when the light spot 2 of the first laser is close to the isolation strip for scanning), the light spot 2 of the first laser is at least tangent to the edge of the isolation strip 5 or partially positioned in the isolation strip 5, so that the laser heat affected zone 3 of the light spot 2 of the first laser is overlapped with all or part of the isolation strip 5 and does not exceed the isolation strip 5, and the effective area is not affected; and S9, electrode wiring and packaging to finish the manufacture of the perovskite solar cell module.
The main improvement of the invention is S7 and S8, and for the preparation of other similar solar cell modules, the insulating edge cleaning method in the prior art is replaced by the S7 and S8 method in the invention.
The invention also provides a thin film battery edge cleaning and insulating system which comprises a memory, a processor and a computer program which is stored on the memory and can run on the processor, wherein the processor executes the computer program to realize the steps of the thin film battery edge cleaning and insulating method.
Two specific examples are given below to further illustrate the present invention.
Example 1:
(1) Selecting a transparent glass substrate, and cleaning and drying the transparent glass substrate;
(2) Preparing a conductive film TCO on the cleaned glass substrate by magnetron sputtering, wherein the thickness of the conductive film TCO is 500nm;
(3) Scribing the conductive film TCO by using infrared laser, wherein the laser wavelength is 1064nm, the pulse width is 200ns, and the spot size is 20 mu m;
(4) Preparing an electron transport layer by magnetron sputtering or evaporation, wherein the electron transport layer is made of TiO 2 The thickness is 50nm;
(5) The perovskite layer material is FAPbI by using ink-jet or spin-coating perovskite layer 3 The thickness is 500nm;
(6) Preparing a hole transport layer by magnetron sputtering or evaporation, wherein the material of the hole transport layer is spiro-OMeTAD and the thickness is 50nm;
(7) Scribing the functional layer (the hole transport layer, the perovskite layer and the electron transport layer) by using green laser, wherein the laser wavelength is 532nm, and the pulse width is 20ns;
(8) Preparing an electrode by magnetron sputtering or evaporation, wherein the material is gold or TCO;
(9) Marking a boundary of an insulating region needing edge cleaning and an effective region of the battery by using a metal needle, wherein the metal needle is 15 micrometers, the marking width is 15 micrometers, and cutting the electrode, the hole transport layer, the perovskite layer, the electron transport layer and the conductive film TCO to be used as an isolation belt;
(10) Using large-spot infrared laser to perform edge cleaning insulation, wherein the size of a spot is 400 mu m circular, the wavelength of laser is 1064nm, and the heat affected zone is about 10 mu m;
(11) And (5) connecting and packaging the electrodes to finish the manufacture of the perovskite solar cell module.
Example 2:
(1) Selecting a transparent glass substrate, and cleaning and drying the transparent glass substrate;
(2) Preparing a conductive film TCO on the cleaned glass substrate by magnetron sputtering, wherein the thickness of the conductive film TCO is 600nm;
(3) Scribing the conductive film TCO by using infrared laser, wherein the laser wavelength is 1064nm, the pulse width is 100ns, and the spot size is 30 mu m;
(4) Preparing a hole transport layer by magnetron sputtering or evaporation, wherein the material of the hole transport layer is spiro-OMeTAD and the thickness is 60nm;
(5) Using ink-jet or spin-coating perovskite layer, the perovskite layer material being FAPBI 3 The thickness is 550nm;
(6) Preparing an electron transport layer by magnetron sputtering or evaporation, wherein the electron transport layer is made of TiO 2 The thickness is 60nm;
(7) Scribing functional layers (a hole transmission layer, a perovskite layer and an electron transmission layer) by using green laser, wherein the laser wavelength is 532nm, and the pulse width is 10ns;
(8) Preparing an electrode by magnetron sputtering or evaporation, wherein the material is gold or TCO;
(9) At the junction of an insulating region needing edge cleaning and a battery effective region, scribing by using small-spot laser, cutting an electrode, a hole transport layer, a perovskite layer, an electron transport layer and TCO to serve as an isolation strip, wherein the laser wavelength is 532nm, the pulse width is 20ps, and the spot size is 15 mu m circular;
(10) Edge clearing insulation is carried out by using large-spot infrared laser, the spot size is 400 mu m circular, the laser wavelength is 1064nm, and the heat affected zone is about 10 mu m;
(11) And (5) connecting and packaging the electrodes to finish the manufacture of the perovskite solar cell module.
In the invention, at the junction of an insulating area needing edge cleaning and an effective area of a battery, a small spot laser (second laser) is used for scribing or mechanical scribing, and an electrode, a hole transport layer, a perovskite layer, an electron transport layer and a conductive film TCO are cut to be used as an isolation belt; and then large-spot laser (first laser) is used for laser edge cleaning insulation, a laser heat affected zone of the large spot close to the effective zone of the battery is not irradiated on the perovskite film layer, no bulge is generated, and the bulge on the other side can be removed after the large spot of the next line is scanned, so that the bulge area and the bulge degree are greatly reduced.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.
Claims (9)
1. The method is characterized in that after an electrode is prepared on a thin film battery piece and before edge cleaning and insulation are carried out by utilizing first laser, a scribing step is added;
the scribing step specifically comprises the following steps: scribing at the junction of the insulation area to be edge cleaned and the effective area of the battery to form an isolation strip of the insulation area to be edge cleaned and the effective area of the battery, wherein the depth of the isolation strip is consistent with that of the edge cleaning insulation;
the edge cleaning insulation specifically comprises: the method comprises the steps that a first laser is used for scanning an insulating area to be edge cleaned, when a light spot of the first laser is close to an isolation strip for scanning, the light spot of the first laser is at least tangent to the edge of the isolation strip or partially positioned in the isolation strip, and therefore the heat affected area of the light spot of the first laser is enabled to be overlapped with all or part of the isolation strip and not to exceed the isolation strip.
2. The edge deletion insulating method for the thin film battery as claimed in claim 1, wherein the scribing step is performed by using a metal needle.
3. The edge-cleaning insulation method for the thin film battery as claimed in claim 2, wherein the scribing step is performed by using a second laser, and the spot size of the second laser is 10-100 μm.
4. The edge deletion and insulation method of the thin film battery as claimed in claim 3, wherein the second laser is an infrared, ultraviolet or green laser with a pulse width of picoseconds, femtoseconds or nanoseconds.
5. The edge deletion insulating method for the thin film battery as claimed in claim 4, wherein the laser wavelength of the second laser is 532nm, the pulse width is 20ps, and the spot size is 15 μm.
6. The edge deletion insulating method of the thin film battery as claimed in claim 3, wherein the first laser is an infrared laser, and the spot size is 10-100 μm or more.
7. A method for manufacturing a solar cell module, characterized in that the method comprises the method for edge deletion and insulation of a thin film cell according to any one of claims 1 to 6.
8. The preparation method according to claim 7, wherein the preparation method is used for preparing a perovskite solar cell module, and comprises the following steps:
s1, selecting a transparent glass substrate, and cleaning and drying the transparent glass substrate;
s2, preparing a conductive film on a transparent glass substrate;
s3, scribing the conductive film;
s4, preparing an electron transport layer, a perovskite layer and a hole transport layer in sequence;
s5, scribing a functional layer consisting of the hole transport layer, the perovskite layer and the electron transport layer;
s6, preparing an electrode;
s7, scribing at the junction of the insulating area needing edge cleaning and the effective area of the battery, and cutting the electrode, the hole transport layer, the perovskite layer, the electron transport layer and the conductive film to form an isolation strip of the insulating area to be edge cleaned and the effective area of the battery;
s8, repeatedly scanning the insulating area to be edge-cleaned by using first laser, wherein during the first scanning, the light spot heat affected area of the first laser is only overlapped with the whole or part of the isolation band;
and S9, electrode wiring and packaging to finish the manufacture of the perovskite solar cell module.
9. A thin film battery edge deletion insulation system, which is characterized by comprising a memory, a processor and a computer program stored on the memory and capable of running on the processor, wherein the processor executes the computer program to realize the steps of the thin film battery edge deletion insulation method according to any one of claims 1 to 6.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117226279A (en) * | 2023-11-13 | 2023-12-15 | 杭州众能光电科技有限公司 | Perovskite battery laser processing device and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117226279A (en) * | 2023-11-13 | 2023-12-15 | 杭州众能光电科技有限公司 | Perovskite battery laser processing device and method |
| CN117226279B (en) * | 2023-11-13 | 2024-03-12 | 杭州众能光电科技有限公司 | Perovskite battery laser processing device and method |
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