CN108183077B - Monitoring method for spraying amount of photoresist - Google Patents
Monitoring method for spraying amount of photoresist Download PDFInfo
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- CN108183077B CN108183077B CN201611124067.1A CN201611124067A CN108183077B CN 108183077 B CN108183077 B CN 108183077B CN 201611124067 A CN201611124067 A CN 201611124067A CN 108183077 B CN108183077 B CN 108183077B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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Abstract
The invention relates to a method for monitoring the spraying amount of a photoresist. The method comprises the following steps: providing a wafer; forming a plurality of first marks arranged at intervals along a first direction on two sides of the center of the surface of the wafer, forming a plurality of second marks arranged at intervals along a second direction on two sides of the center of the surface of the wafer, wherein the first direction is vertical to the second direction, and the distance between any one first mark and the center is not equal to the distance between any one second mark and the center; spraying photoresist on the wafer to cover the wafer, the first mark and the second mark; imaging the photoresist and determining the distance from a halo formed by the photoresist to the edge of the wafer according to the first mark and the second mark in an imaged pattern; and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for monitoring the spraying amount of a photoresist.
Background
Photolithography is the driving force for the development of integrated circuit fabrication processes and is one of the most sophisticated. Improvements in lithographic technology have made significant progress in the development of integrated circuits relative to other individual fabrication techniques. Before the photolithography process is started, a pattern is firstly copied to a mask plate through a specific device, and then a pattern structure on the mask plate is copied to a silicon wafer for producing a chip through generating light with a specific wavelength through the photolithography device.
Various photoresists are used in the photolithography process, and as polyamide (polyimide) products are increased, some cases with lower probability are also generated. For example, the problem of hard ware (hard ware) causes insufficient photoresist of the sprayed polyamide (polyamide) and insufficient coating (void coating) on the wafer, which finally results in the rejection of many products.
Currently, the machine allocation (dependency volume) is currently checked by a device using a measuring cylinder or a measuring cup in a PM or down state of a machine engineer, but there is no normal monitoring (monitor) method. According to the experience of previous cases, if the spraying amount of a machine table can be simply monitored off line (offline monitor), the rejection probability of wafers can be greatly reduced.
Therefore, it is necessary to provide a method for monitoring the spraying amount of photoresist to solve the problems in the prior art.
Disclosure of Invention
In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
In order to overcome the problems existing at present, the invention provides a method for monitoring the spraying amount of photoresist, which comprises the following steps:
providing a wafer;
forming a plurality of first marks arranged at intervals along a first direction on two sides of the center of the surface of the wafer, forming a plurality of second marks arranged at intervals along a second direction on two sides of the center of the surface of the wafer, wherein the first direction is vertical to the second direction, and the distance between any one first mark and the center is not equal to the distance between any one second mark and the center;
spraying photoresist on the wafer to cover the wafer, the first mark and the second mark;
imaging the photoresist and determining the distance from a halo formed by the photoresist to the edge of the wafer according to the first mark and the second mark in an imaged pattern;
and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
Optionally, the wafer has a diameter of 200mm, and a distance between the first mark closest to the center and the center is different from a distance between the second mark closest to the center and the center by 5 mm.
Optionally, all of the first marks are symmetrically disposed about the center, and all of the second marks are symmetrically disposed about the center.
Optionally, the distances between adjacent first marks are equal, and the distances between adjacent second marks are equal.
Optionally, the distance between adjacent first marks is not greater than 10mm, and the distance between adjacent second marks is not greater than 10 mm.
Optionally, the first mark is provided at a position 95mm, 85mm, 75mm, 65mm, 55mm, 45mm, 35mm, 25mm and 15mm from the wafer center, respectively, in the first direction.
Optionally, the second mark is provided at a position 90mm, 80mm, 70mm, 60mm, 50mm, 40mm, 30mm, 20mm and 10mm from the wafer center, respectively, in the second direction.
Optionally, the method of preparing the first label and/or the second label comprises:
forming a marking material layer on the wafer to cover the wafer;
etching the marking material layer to obtain the first mark and/or the second mark.
Optionally, the first mark and/or the second mark is a square mark.
Optionally, the step of determining the distance from the halo formed by the photoresist to the edge of the wafer comprises:
finding said halo formed by said photoresist in said imaged pattern and then determining said first mark and said second mark nearest said halo;
comparing the distance between the first mark closest to the halo and the halo with the distance between the second mark closest to the halo and the halo, and determining the distance of the halo to the wafer edge with the mark closer to the halo as a reference.
Optionally, the distance is a distance from an innermost ring of the halo to the wafer edge.
Optionally, the photoresist comprises a polyamide.
The invention provides a method for monitoring the spraying amount of a photoresist, which aims to solve the problems in the prior art and comprises the steps of firstly forming a plurality of first marks and second marks on the surface of a wafer, wherein the extending directions of the first marks and the second marks are vertical to each other and are used for determining the distance from a halo to the edge of the wafer, then forming the photoresist on the wafer and imaging the photoresist, searching the position of the halo specific to the photoresist in an imaging pattern, and determining the distance from the halo to the edge of the wafer according to the first marks and the second marks; and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
The invention realizes the method for monitoring the photoresist spraying amount of a wafer monitor (wafer monitor) machine by utilizing the characteristics of polyamide (polymide) photoresist. The invention has simple operation, saves the time of the machine, and improves the efficiency of the machine; the timeliness of spraying amount monitoring (volume monitor) is effectively solved, and the risk of wafer scrapping is effectively reduced.
Drawings
The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
In the drawings:
FIG. 1 is a flow chart of a method for monitoring the sprayed amount of photoresist according to one embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first mark and a second mark in a wafer substrate according to an embodiment of the invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
In order to provide a thorough understanding of the present invention, detailed steps and detailed structures will be set forth in the following description in order to explain the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
Currently, the machine allocation (dependency volume) is currently checked by a device using a measuring cylinder or a measuring cup in a PM or down state of a machine engineer, but there is no normal monitoring (monitor) method. According to the experience of previous cases, if one more spraying amount can be simply monitored (offline monitor) of the machine table, the rejection probability of the wafer can be greatly reduced.
Since the photoresist, such as polyamide (polyimide), is a very thick and viscous photoresist, the sprayed photoresist is difficult to spread on the wafer, and it is difficult to see what particular difference is seen on the wafer surface for normal thickness monitoring by observation of a normal machine. However, the lithography machine (photo) has a stage that can photograph the wafer surface. From the surface photographs we found that the shape of the wafer surface was different for different spray amounts.
Through a large number of experiments and summary comparison, it is obvious that the surface appearance of the photos shot by different spraying amounts is different, and the more the spraying amount of the photoresist is, the farther the halo on the surface of the photoresist is. By comparison, the inner ring of 7ml is about 25mm away from the edge of the wafer; the distance between the 6ml inner ring and the edge of the wafer is about 31 mm; the distance between the 5ml inner ring and the edge of the wafer is about 38 mm; the distance between the 4ml inner ring and the edge of the wafer is about 49 mm; the 3ml inner ring is approximately 56mm from the edge of the wafer.
Through the experiment, the distance from the halo to the edge of the wafer and the spraying amount of the photoresist have a corresponding relation, and after the distance from the halo to the edge of the wafer is determined, the spraying amount of the photoresist can be determined according to the corresponding relation between the halo and the wafer.
The present invention provides a method for monitoring the sprayed amount of a photoresist according to the above experimental method, which comprises:
providing a wafer, arranging a plurality of first marks on the wafer along a first direction at intervals on two sides of the center of the wafer, wherein the distance between every two adjacent first marks is not more than 10mm, arranging a plurality of second marks on the wafer along a second direction at intervals on two sides of the center of the wafer, and the distance between every two adjacent second marks is not more than 10mm, wherein the first direction is vertical to the second direction, and the distances from the first marks to the circle center are different from the distances from the corresponding second marks;
spraying photoresist on the wafer to cover the wafer;
imaging the photoresist and finding the position of the specific halo of the photoresist in the imaging pattern;
determining a distance from the halo to the wafer edge according to the first mark and the second mark;
and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
Optionally, the first direction is an X-axis direction, and the second direction is a Y-axis direction, which are perpendicular to each other.
The first mark is arranged in the X-axis direction, and is arranged at positions respectively 95mm, 85mm, 75mm, 65mm, 55mm, 45mm, 35mm, 25mm and 15mm away from the center of the wafer along the first direction.
For example, a first mark is exposed every 10mm at positions (-95,0) (-85,0) up to (85,0) (95,0), respectively, in the X direction of the wafer to determine coordinates as coordinates for reading the halo position in a subsequent step.
The second mark is arranged on the Y-axis direction, and is arranged at positions respectively 90mm, 80mm, 70mm, 60mm, 50mm, 40mm, 30mm, 20mm and 10mm away from the center of the wafer along the second direction.
For example, a second mark is exposed equally every 10mm at the positions (0,90) (0,80) up to (0, -80) (0, -90) in the Y direction to determine the coordinates as the coordinates for reading the halo position in a subsequent step.
The first mark and the corresponding second mark have different distances from the center of a circle, for example, the distance between the first mark and the corresponding second mark is different from the center of a circle by 5 mm. By cross-reading in the X/Y direction we can then refine the final reading to within 5 mm.
The distance from the halo to the edge of the wafer is the vertical distance from the halo to the edge of the wafer, namely the distance from the halo to the edge of the wafer along the diameter direction of the wafer.
Further, the halo can include an array of multiple halos nested inside and outside of each other, such that the distance is from an innermost halo of the halos to the edge of the wafer.
The corresponding relationship between the distance from the halo to the edge of the wafer and the spraying amount of the photoresist is shown as the following table:
| numbering | Reading number | Amount of spray |
| 1 | <25mm | ﹥ |
| 2 | 25mm-30mm | 6ml-7ml |
| 3 | 30mm-40mm | 5ml-6ml |
| 4 | 40mm-50mm | 4ml-5ml |
| 5 | 50mm-55mm | 3ml-4ml |
| 6 | ﹥55mm | <3ml |
The table above is a comparison table of the reading and the spraying amount obtained according to the actual situation, the design is applied to normal monitoring to obtain the final reading, and the corresponding relation of the table above is utilized. The spraying amount of the photoresist on the machine can be monitored. The time is saved, and the efficiency of the machine table is improved.
It should be noted that the correspondence between the distance from the halo to the edge of the wafer and the photoresist spraying amount in the above table is for a wafer with a diameter of 200mm, and the correspondence is related to the size of the wafer, and the correspondence between the distance and the spraying amount is different, but the purpose can be achieved by using the method of the present invention, for example, when the wafer has a diameter of 150mm, only the correspondence between the distance and the spraying amount needs to be re-established, and then the spraying amount of the photoresist under the machine is monitored according to the correspondence.
The invention provides a method for monitoring the spraying amount of a photoresist, which aims to solve the problems in the prior art and comprises the steps of firstly forming a plurality of first marks and second marks on the surface of a wafer, wherein the extending directions of the first marks and the second marks are vertical to each other and are used for determining the distance from a halo to the edge of the wafer, then forming the photoresist on the wafer and imaging the photoresist, searching the position of the halo specific to the photoresist in an imaging pattern, and determining the distance from the halo to the edge of the wafer according to the first marks and the second marks; and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist. The method for monitoring the photoresist spraying amount of a wafer monitor (wafer monitor) machine is realized by utilizing the characteristics of polyamide (polymide) photoresist. The invention has simple operation, saves the time of the machine, and improves the efficiency of the machine; the timeliness of spraying amount monitoring (volume monitor) is effectively solved, and the risk of wafer scrapping is effectively reduced.
Example one
The detailed steps of an exemplary method for monitoring the sprayed amount of photoresist according to the embodiment of the present invention will be described with reference to fig. 1 and 2. FIG. 1 is a flow chart of a method for monitoring the sprayed amount of photoresist, which specifically includes:
step S1: providing a wafer;
step S2: forming a plurality of first marks arranged at intervals along a first direction on two sides of the center of the surface of the wafer, forming a plurality of second marks arranged at intervals along a second direction on two sides of the center of the surface of the wafer, wherein the first direction is vertical to the second direction, and the distance between any one first mark and the center is not equal to the distance between any one second mark and the center;
step S3: spraying photoresist on the wafer to cover the wafer, the first mark and the second mark;
step S4: imaging the photoresist and determining the distance from a halo formed by the photoresist to the edge of the wafer according to the first mark and the second mark in an imaged pattern;
step S5: and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
The method is further described with reference to the accompanying drawings.
Firstly, executing a first step to provide a wafer; forming a plurality of first marks 201 arranged at intervals along a first direction on two sides of the center of the wafer surface, forming a plurality of second marks 202 arranged at intervals along a second direction on two sides of the center of the wafer surface, wherein the first direction is vertical to the second direction, and the distance between any one first mark and the center is not equal to the distance between any one second mark and the center.
Specifically, as shown in fig. 2, the first direction is an X-axis direction, and the second direction is a Y-axis direction, which are perpendicular to each other.
Wherein the wafer has a diameter of 200mm, and a distance between the first mark closest to the center and the center is different from a distance between the second mark closest to the center and the center by 5 mm.
In the invention, the corresponding relation between the distance from the halo to the edge of the wafer and the spraying amount of the photoresist is related to the size of the wafer, the sizes of the wafers are different, and the corresponding relation between the distance and the spraying amount is different, and the wafer diameter is taken as an example for explanation in the invention to be 200 mm.
Further, all of the first marks are symmetrically disposed about the center, and all of the second marks are symmetrically disposed about the center.
The center is the center of the wafer, when the wafer is circular, the center is the center of the wafer, and when the wafer is square, the center is the intersection point of two symmetry axes of the square.
Optionally, the distances between adjacent first marks are equal, and the distances between adjacent second marks are equal.
Optionally, the distance between adjacent first marks is not greater than 10mm, and the distance between adjacent second marks is not greater than 10 mm.
For example, the distance between adjacent first marks is 10mm, and the distance between adjacent second marks is 10 mm.
In one embodiment of the present invention, the first mark 201 is disposed in the X-axis direction, and is disposed at positions spaced apart from the center of the wafer by 95mm, 85mm, 75mm, 65mm, 55mm, 45mm, 35mm, 25mm, and 15mm, respectively, in the first direction.
For example, a first mark 201 is exposed every 10mm at a position (-95,0) (-85,0) up to (85,0) (95,0), respectively, in the X direction of the wafer to determine coordinates as coordinates for reading the halo position in a subsequent step. The second mark 202 is disposed in the Y-axis direction, and is disposed at positions 90mm, 80mm, 70mm, 60mm, 50mm, 40mm, 30mm, 20mm, and 10mm apart from the center of the wafer along the second direction.
For example, a second mark is exposed equally every 10mm at the positions (0,90) (0,80) up to (0, -80) (0, -90) in the Y direction to determine the coordinates as the coordinates for reading the halo position in a subsequent step.
In this embodiment, the wafer is circular, and the origin of the coordinate system is the center of the wafer.
The first mark and the corresponding second mark have different distances to the center of the circle, for example, the distance between the first mark closest to the center of the circle and the second mark closest to the center of the circle is different from the distance between the first mark and the center of the circle by 5 mm. By cross-reading in the X/Y direction we can then refine the final reading to within 5 mm.
Specifically, the distance between the first mark closest to the halo and the halo is compared with the distance between the second mark closest to the halo and the halo, and the distance from the halo to the wafer edge is determined by using the mark closest to the halo as a reference. For example, when the first mark is a smaller distance from the halo, the distance of the halo to the wafer edge is determined with reference to the first mark; when the second mark is a smaller distance from the halo, determining the distance from the halo to the edge of the wafer with reference to the second mark; since the distance of the cross between the first mark and the second mark is 5mm, the error is controlled to be within 5 mm.
Wherein the preparation method of the first mark comprises the following steps:
forming a marking material layer on the wafer to cover the wafer;
and etching the marking material layer to obtain the square first mark.
The marking material layer includes an oxide, and a method for forming the oxide may be a method commonly used in the art, and is not limited to a specific one.
Optionally, the method of preparing the second label comprises:
forming a marking material layer on the wafer to cover the wafer;
and etching the marking material layer to obtain the second marks in square shapes.
Preferably, the first mark and the second mark are formed simultaneously to further simplify the process steps.
And step two, spraying photoresist on the wafer to cover the wafer.
Alternatively, the photoresist may be a photoresist such as polyamide, and is not limited to the above example.
The spraying method of the photoresist can adopt methods such as spraying, coating and the like which are commonly used in the field.
And step three is executed, the photoresist is imaged, and the position of the special halo of the photoresist is searched in the imaged pattern.
In this step, the photo function of the machine can be selected to take a picture of the wafer coated with photoresist thickness, so as to obtain the imaging pattern on the surface of the photoresist.
Among them, since a photoresist such as polyamide (polyimide) is a very thick and very viscous photoresist, the ejected photoresist is difficult to be spread on the wafer, and it is difficult to see what particular difference is observed on the wafer surface for monitoring the normal thickness by the observation of a normal machine. However, a photo-lithography machine (photo) has a stage that can take a picture of the wafer surface. From the surface photographs we found that the shape of the wafer surface was different for different spray amounts.
Through a large number of experiments and summary comparison, it is obvious that the surface appearance of the photos shot by different spraying amounts is different, and the more the spraying amount of the photoresist is, the farther the halo on the surface of the photoresist is. By comparison, the innermost circle of 7ml is approximately 25mm from the edge of the wafer; the distance between the innermost ring of 6ml and the edge of the wafer is about 31 mm; the distance between the innermost ring of 5ml and the edge of the wafer is about 38 mm; the distance between the innermost ring of 4ml and the edge of the wafer is about 49 mm; the 3ml innermost ring is approximately 56mm from the wafer edge.
Through the experiment, the distance from the halo to the edge of the wafer and the spraying amount of the photoresist have a corresponding relation, and after the distance from the halo to the edge of the wafer is determined, the spraying amount of the photoresist can be determined according to the corresponding relation between the halo and the wafer.
And step four is executed, and the distance from the halo to the edge of the wafer is determined according to the first mark and the second mark.
The halo in this step may comprise an array of a plurality of halos nested inside and outside of each other, so that the distance is the distance from the innermost halo of the halos to the edge of the wafer.
After determining the innermost one of the halos, observing the positions of the innermost one of the halos from the first mark and the second mark, comparing the distance between the first mark closest to the halo and the halo with the distance between the second mark closest to the halo and the halo, and determining the distance of the halo to the wafer edge with the mark closer to the halo as a reference.
The distance from the halo to the edge of the wafer is the vertical distance from the halo to the edge of the wafer, namely the distance from the halo to the edge of the wafer along the diameter direction of the wafer.
And step five is executed, and the spraying amount of the photoresist is determined according to the corresponding relation between the distance and the spraying amount of the photoresist.
The invention can find that the distance from the halo to the edge of the wafer and the spraying amount of the photoresist have a corresponding relation through experiments, and after the distance from the halo to the edge of the wafer is determined, the spraying amount of the photoresist can be determined according to the corresponding relation between the halo and the edge of the wafer.
The corresponding relationship between the distance from the halo to the edge of the wafer and the spraying amount of the photoresist is shown as the following table:
| numbering | Reading number | Amount of spray |
| 1 | <25mm | ﹥ |
| 2 | 25mm-30mm | 6ml-7ml |
| 3 | 30mm-40mm | 5ml-6ml |
| 4 | 40mm-50mm | 4ml-5ml |
| 5 | 50mm-55mm | 3ml-4ml |
| 6 | ﹥55mm | <3ml |
The table above is a comparison table of the reading and the spraying amount obtained according to the actual situation, the design is applied to normal monitoring to obtain the final reading, and the corresponding relation of the table above is utilized. The spraying amount of the photoresist on the machine can be monitored. The time is saved, and the efficiency of the machine table is improved.
It should be noted that the correspondence between the distance from the halo to the edge of the wafer and the photoresist spraying amount in the above table is for a wafer with a diameter of 200mm, and the correspondence is related to the size of the wafer, and the correspondence between the distance and the spraying amount is different, but the purpose can be achieved by using the method of the present invention, for example, when the wafer has a diameter of 150mm, only the correspondence between the distance and the spraying amount needs to be re-established, and then the spraying amount of the photoresist under the machine is monitored according to the correspondence.
The invention provides a method for monitoring the spraying amount of a photoresist, which aims to solve the problems in the prior art and comprises the steps of firstly forming a plurality of first marks and second marks on the surface of a wafer, wherein the extending directions of the first marks and the second marks are vertical to each other and are used for determining the distance from a halo to the edge of the wafer, then forming the photoresist on the wafer and imaging the photoresist, searching the position of the halo specific to the photoresist in an imaging pattern, and determining the distance from the halo to the edge of the wafer according to the first marks and the second marks; and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist. The method for monitoring the photoresist spraying amount of a wafer monitor (wafer monitor) machine is realized by utilizing the characteristics of polyamide (polymide) photoresist. The invention has simple operation, saves the time of the machine, and improves the efficiency of the machine; the timeliness of spraying amount monitoring (volume monitor) is effectively solved, and the risk of wafer scrapping is effectively reduced.
The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (11)
1. A method for monitoring a photoresist coating dose, comprising:
providing a wafer;
forming a plurality of first marks arranged at intervals along a first direction on two sides of the center of the surface of the wafer, forming a plurality of second marks arranged at intervals along a second direction on two sides of the center of the surface of the wafer, wherein the first direction is vertical to the second direction, and the distance between any one first mark and the center is not equal to the distance between any one second mark and the center;
spraying photoresist on the wafer to cover the wafer, the first mark and the second mark;
imaging the photoresist and determining the distance from a halo formed by the photoresist to the wafer edge based on the first mark and the second mark in an imaged pattern, comprising: finding said halo formed by said photoresist in said imaged pattern and then determining said first mark and said second mark nearest said halo; comparing the distance between the first mark closest to the halo and the halo with the distance between the second mark closest to the halo and the halo, determining the distance of the halo to the wafer edge with the mark closer to the halo as a reference;
and determining the spraying amount of the photoresist according to the corresponding relation between the distance and the spraying amount of the photoresist.
2. A method according to claim 1, wherein the wafer has a diameter of 200mm, and the distance between the first mark closest to the center and the center differs from the distance between the second mark closest to the center and the center by 5 mm.
3. The method of claim 1, wherein all of the first marks are symmetrically disposed about the center, and all of the second marks are symmetrically disposed about the center.
4. The method of claim 1, wherein the distance between adjacent first marks is equal and the distance between adjacent second marks is equal.
5. The method of claim 4, wherein the distance between adjacent first marks is no greater than 10mm, and the distance between adjacent second marks is no greater than 10 mm.
6. The method of claim 5, wherein the first mark is provided at a position 95mm, 85mm, 75mm, 65mm, 55mm, 45mm, 35mm, 25mm and 15mm from the wafer center, respectively, in the first direction.
7. The method of claim 5, wherein the second mark is provided at a position 90mm, 80mm, 70mm, 60mm, 50mm, 40mm, 30mm, 20mm, and 10mm from the wafer center, respectively, in the second direction.
8. The method according to claim 1, characterized in that the method for preparing the first marking and/or the second marking comprises:
forming a marking material layer on the wafer to cover the wafer;
etching the marking material layer to obtain the first mark and/or the second mark.
9. The method of claim 1, wherein the first mark and/or the second mark is a square mark.
10. The method of claim 1, wherein the distance is a distance from an innermost one of the halos to the edge of the wafer.
11. The method of claim 1, wherein the photoresist comprises polyamide.
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