CN105892241B - A kind of device and method of litho machine large area static state focusing and leveling - Google Patents

A kind of device and method of litho machine large area static state focusing and leveling Download PDF

Info

Publication number
CN105892241B
CN105892241B CN201410199498.9A CN201410199498A CN105892241B CN 105892241 B CN105892241 B CN 105892241B CN 201410199498 A CN201410199498 A CN 201410199498A CN 105892241 B CN105892241 B CN 105892241B
Authority
CN
China
Prior art keywords
exposure
exposure field
leveling
focusing
microscope group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410199498.9A
Other languages
Chinese (zh)
Other versions
CN105892241A (en
Inventor
齐景超
陈飞彪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to CN201410199498.9A priority Critical patent/CN105892241B/en
Publication of CN105892241A publication Critical patent/CN105892241A/en
Application granted granted Critical
Publication of CN105892241B publication Critical patent/CN105892241B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The present invention proposes a kind of efficient litho machine large area static state focusing leveling device, comprising: mask pattern is exposed on silicon wafer by projection objective, silicon wafer, work stage and focusing leveling device, the projection objective;The focusing leveling device includes light source, illumination microscope group, projection slit, projection microscope group, detection microscope group and detector, the projection slit is imaged on measured object by the light source by the illumination microscope group and the projection microscope group, and the picture of projection slit is imaged on the detector by the detection microscope group after measured object reflects;It is characterized in that, the measurement hot spot of the projection slit can cover multiple exposure fields, each exposure field includes multiple measurement hot spots.A kind of efficient large area static state focusing leveling device proposed by the present invention and method can simultaneously measure multiple exposure fields.Optimal focal plane is directly reached when the switching of field, reduce measurement and levels the time by field, improves overall efficiency.

Description

A kind of device and method of litho machine large area static state focusing and leveling
Technical field
The present invention relates to a kind of integrated circuit equipment manufacturing technical field more particularly to a kind of litho machine large area static state tune The device and method of coke leveling.
Background technique
The yield Throughout of complete machine is one of the core index of litho machine in litho machine field, each to improve yield Litho machine manufacturer is continually striving to exploit potentialities, and TwinScan Series duplex part platform system is proposed headed by ASML company, In in overall measurement position fine alignment is carried out to 16 alignment marks on silicon wafer, to improve alignment precision.It is 2001 in publication date On October 4, Patent No. US6327025B1 Nikon patent in, focusing and leveling sensor system uses multiple measurement light Spot and workpiece plane of exposure vertical position information is detected to be located at the method based on the measurement hot spot of center, realize oneself Dynamic focusing and leveling purpose.But there is still a need for each points to silicon chip edge successively to measure respectively for focusing leveling device.
The sequence of photolithography machines such as prior art such as NIKON, ASML, by field leveling measurement point arrangement as shown in Figure 1, The face shape of an exposure field can only be measured every time in the measurement process.The process of single exposure field measurement and exposure process is such as Shown in Fig. 2, be first upper piece and global leveling process, then since defined first exposure field, use focusing and leveling sensor Measured object is measured, the optimal focal plane of measured object arrival object lens is made according to face shape information (Z, Rx and Ry) moving movement platform It is exposed again namely first field is successively by measurement, leveling and exposure process.After first field end exposure, sports platform Carry measured object reaches second exposure field of measured object below object lens, and focusing and leveling sensor again exposes second Field measures, and is followed by leveling and the exposure process of the exposure field.All exposure fields are measured by the sequence planned Leveling and exposure.Prior art levels exposure process by field measurement, and measurement ambient time is long, and field and field cannot when switching Once move at the optimal focal plane of object lens, it is time-consuming more by field leveling process, influence complete machine yield.
Summary of the invention
In order to overcome defect existing in the prior art, the present invention proposes that a kind of efficient litho machine large area static state focusing is adjusted Leveling device, comprising: light source, projection slit, projects microscope group, detects microscope group and detector illumination microscope group, described in the light source process The projection slit is imaged on measured object by illumination microscope group and the projection microscope group, passes through the detection after measured object reflects The picture of projection slit is imaged on the detector by microscope group;It is characterized in that, the measurement hot spot of the projection slit can cover Multiple exposure fields are covered, each exposure field includes multiple measurement hot spots.
Further, the measurement hot spot can cover at least two exposure fields of covering.
Further, the measurement hot spot number of each exposure field is at least three.
Silicon wafer exposure is carried out using above-mentioned litho machine large area static state focusing leveling device present invention simultaneously discloses a kind of Method, which comprises the steps of:
(1) silicon wafer and global leveling on;
(2) focusing and leveling sensor carries out surface shape measurement to i exposure field simultaneously;
(3) since first exposure field, the optimal focal plane that moving movement platform makes measured object reach object lens is exposed;
(4) sports platform carries measured object, reaches next exposure field of measured object at the optimal focal plane of object lens, under One exposure field is exposed, and continuously carries out this step until all exposure completions of i exposure field.
Invention additionally discloses a kind of sides that silicon wafer exposure is carried out using above-mentioned litho machine large area static state focusing leveling device Method, which comprises the steps of:
(1) upper piece and global leveling;
(2) focusing and leveling sensor carries out surface shape measurement to first this i exposure field simultaneously;
(3) since first exposure field of the batch, moving movement platform make measured object reach object lens optimal focal plane into Row exposure;
(4) sports platform carries measured object, reaches next exposure field of measured object at the optimal focal plane of object lens, under One exposure field is exposed, and continuously carries out this step until i exposure field of the batch is all exposed and completed;
(5) focusing and leveling sensor measures i exposure field of next batch simultaneously;
(6) repeat the above steps (3), (4) and (5), completes until all exposure fields of all batches all expose.
A kind of efficient large area static state focusing leveling device proposed by the present invention and method, it is desirable that exposure field divide x, Two vertical direction of y, arrangement can cover the measurement point of two or more exposure fields, can carry out simultaneously to multiple exposure fields Measurement.Optimal focal plane is directly reached when the switching of field, reduce measurement and levels the time by field, improves overall efficiency.
Detailed description of the invention
It can be obtained further by detailed description of the invention below and institute's accompanying drawings about the advantages and spirit of the present invention Solution.
Fig. 1 is to level measurement point layout drawing by field in the prior art;
Fig. 2 is the flow chart that list exposes field measurement and exposure process in the prior art;
Fig. 3 is photo-etching machine exposal and focusing leveling device structural schematic diagram of the present invention;
Fig. 4 is the hot spot arrangement schematic diagram at projection slit;
Fig. 5 is the more all standing measurement figures in silicon wafer face;
Fig. 6 is more all standing leveling and exposure process figure;
Fig. 7 is that the more parts in silicon wafer face cover measurement figure;
Fig. 8 is more part covering leveling and exposure process figure.
Specific embodiment
The specific embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Fig. 3 is photo-etching machine exposal of the present invention and focusing leveling device structural schematic diagram.Projection objective 1 exposes mask pattern Onto silicon wafer 2.Silicon wafer 2 is measured object, is sports platform 3 below silicon wafer 2, carries measured object and moves in six-freedom degree direction, So that silicon wafer exposure field reaches the best focal plane of object lens.It is the focusing tune of face shape information measurement in the two sides of silicon wafer 2 and object lens 1 Leveling device, a left side are detection branch, and the right side is projected branch.Focusing leveling device, which is realized, believes the face shape of measured object current location Breath --- height Z and the measurement for rotating Rx, Ry.
Focusing leveling device use triangulation, light source 9 by illumination microscope group 8 and projection microscope group 6 by projection slit 7 at As the picture of slit being imaged on detector 4 by detection microscope group 5 after measured object reflects on measured object.The height of measured object Degree is different, and the position that projection slit 7 is imaged on detector 4 is just different, and the hot spot in measured object height and detector is at image position It is one-to-one for setting.
Fig. 4 is the hot spot arrangement schematic diagram at projection slit, and the hot spot layout drawing of four fields can be at least covered for one kind, is visited Hot spot is surveyed to be distributed in the range of 30mm*30mm.The large area static state focusing and leveling strategy that the technical program proposes, it is desirable that each The measurement hot spot number of exposure field is at least three;At least two exposure fields can once be measured;Hot spot x is measured to covering two A field, y to covering two fields.
Fig. 5 is that the more all standings in silicon wafer face measure figure.In the present embodiment, measurement hot spot can cover four exposure fields, Then in measurement process, the face shape information of available four exposure fields.Four dark square regions are the exposure needed in figure Light field, focusing and leveling sensor can cover four exposure fields simultaneously as shown in the figure.In this case, one-shot measurement can be obtained All face shape information of four fields, it is corresponding to measure, is as shown in Figure 6 by field leveling and exposure process.Be first upper piece and global Leveling process, then measured object is measured with focusing and leveling sensor, since focusing and leveling sensor is more all standings, therefore The face shape information of whole exposure fields can be obtained in one-shot measurement.Again since defined first exposure field, moving movement platform makes The optimal focal plane for obtaining measured object arrival object lens is exposed again.After first field end exposure, sports platform, which carries measured object, to be made Second exposure field for obtaining measured object reaches at the optimal focal plane of object lens, can be exposed to second field.From a upper field End exposure starts to next exposure, and sports platform all can be direct according to the face shape information that focusing and leveling sensor has measured It carries measured object to reach at object lens optimal focal plane, saves the time of measurement and leveling.
In another embodiment of the present invention, Fig. 7 is that the more parts in silicon wafer face cover measurement figure.Dark 16 in figure A square region is the exposure field needed, and focusing and leveling sensor can cover four exposure fields simultaneously as shown in the figure.This feelings Under condition, the face shape information of four fields is can be obtained in one-shot measurement, first level and expose by field to this four fields, then travelling workpiece Platform, which is measured to next measurement position and leveled by field, to expose, and corresponding process is as shown in Figure 8.Be first upper piece and global leveling Process, then since defined first measurement position, measured object is measured with focusing and leveling sensor, it can be obtained four Face shape information, the case where leveling thereafter and exposure process are with more all standings is identical.The four of first measurement position After a end exposure, then moving movement platform repeats the measurement, leveling and exposure stream of more all standings to second measurement position Journey.Exposure field and focusing and leveling sensor overlay area as shown in Figure 7, measurement position P=1 in flow chart shown in Fig. 8,2, 3,4, face figurate number N=4 once obtained, one-shot measurement needs to expose field sequential i=1, and 2,3,4.The case where more parts cover, together Sample can save surface shape measurement and leveling time.
4 exposure fields, each exposure field can be covered simultaneously with the measurement hot spot of focusing and leveling sensor in above-described embodiment Hot spot number is illustrated for being three, but the present invention is not limited thereto, and those skilled in the art must regard reality Design needs to cover the measurement hot spot of focusing and leveling sensor simultaneously 2 exposure fields, 3 exposure fields, 5 or more exposure fields, The number of spots in each exposure field also can be for 3 or more than 3 simultaneously.
It is preferred embodiment of the invention described in this specification, above embodiments are only to illustrate the present invention Technical solution rather than limitation of the present invention.All those skilled in the art pass through logic analysis, reasoning under this invention's idea Or the limited available technical solution of experiment, it all should be within the scope of the present invention.

Claims (5)

1. a kind of litho machine large area static state focusing leveling device, including light source, illumination microscope group, projection slit, projection microscope group, spy Microscope group and detector are surveyed, the projection slit is imaged on tested by the light source by the illumination microscope group and the projection microscope group On object, the picture of projection slit is imaged on the detector by the detection microscope group after measured object reflects;Its feature exists In the measurement hot spot of the projection slit can cover multiple exposure fields, and each exposure field includes multiple measurement hot spots.
2. litho machine large area static state focusing leveling device as described in claim 1, which is characterized in that the measurement hot spot can To cover at least two exposure fields.
3. litho machine large area static state focusing leveling device as described in claim 1, which is characterized in that each exposure field Measurement hot spot number be at least three.
4. carrying out the side of silicon wafer exposure using any litho machine large area static state focusing leveling device described in claim 1-3 Method, which comprises the steps of:
(1) upper piece and global leveling;
(2) focusing and leveling sensor carries out surface shape measurement to i exposure field simultaneously;
(3) since first exposure field, the optimal focal plane that moving movement platform makes measured object reach object lens is exposed;
(4) sports platform carries measured object, reaches next exposure field of measured object at the optimal focal plane of object lens, to next Exposure field is exposed, and continuously carries out this step until all exposure completions of i exposure field;
Wherein i indicate the focusing and leveling sensor covered exposure field number.
5. carrying out the side of silicon wafer exposure using any litho machine large area static state focusing leveling device described in claim 1-3 Method, which comprises the steps of:
(1) upper piece and global leveling;
(2) focusing and leveling sensor carries out surface shape measurement to i exposure field of first batch simultaneously;
(3) since first exposure field of the batch, the optimal focal plane that moving movement platform makes measured object reach object lens is exposed Light;
(4) sports platform carries measured object, reaches next exposure field of measured object at the optimal focal plane of object lens, to next Exposure field is exposed, and continuously carries out this step until i exposure field of the batch is all exposed and completed;
(5) focusing and leveling sensor measures i exposure field of next batch simultaneously;
(6) repeat the above steps (3), (4) and (5), completes until all exposure fields of all batches all expose;
Wherein i indicate the focusing and leveling sensor covered exposure field number.
CN201410199498.9A 2014-05-12 2014-05-12 A kind of device and method of litho machine large area static state focusing and leveling Active CN105892241B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410199498.9A CN105892241B (en) 2014-05-12 2014-05-12 A kind of device and method of litho machine large area static state focusing and leveling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410199498.9A CN105892241B (en) 2014-05-12 2014-05-12 A kind of device and method of litho machine large area static state focusing and leveling

Publications (2)

Publication Number Publication Date
CN105892241A CN105892241A (en) 2016-08-24
CN105892241B true CN105892241B (en) 2019-03-26

Family

ID=56999827

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410199498.9A Active CN105892241B (en) 2014-05-12 2014-05-12 A kind of device and method of litho machine large area static state focusing and leveling

Country Status (1)

Country Link
CN (1) CN105892241B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107966880B (en) * 2017-03-15 2019-01-11 上海微电子装备(集团)股份有限公司 A kind of vertical control method for litho machine
CN111123667B (en) * 2018-10-31 2021-09-24 上海微电子装备(集团)股份有限公司 Photoetching device, vertical control method of photoetching device and exposure method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101158816A (en) * 2007-11-07 2008-04-09 上海微电子装备有限公司 Time sharing alignment apparatus and alignment method
CN102736422A (en) * 2011-03-31 2012-10-17 上海微电子装备有限公司 Proximity field exposure device and method
CN103048885A (en) * 2011-10-11 2013-04-17 中山新诺科技有限公司 Ultra-large size flat panel display maskless photolithography system and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106404A (en) * 1993-09-29 1995-04-21 Canon Inc Positioning unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101158816A (en) * 2007-11-07 2008-04-09 上海微电子装备有限公司 Time sharing alignment apparatus and alignment method
CN102736422A (en) * 2011-03-31 2012-10-17 上海微电子装备有限公司 Proximity field exposure device and method
CN103048885A (en) * 2011-10-11 2013-04-17 中山新诺科技有限公司 Ultra-large size flat panel display maskless photolithography system and method

Also Published As

Publication number Publication date
CN105892241A (en) 2016-08-24

Similar Documents

Publication Publication Date Title
US6949755B2 (en) Position detection apparatus, position detection method, exposure apparatus, device manufacturing method, and substrate
US9696150B2 (en) Overlay error measuring device and computer program
TWI614823B (en) Double layer alignment device and double layer alignment method
CN107092167B (en) For the method and system without layout Overlay control
US20140278213A1 (en) Overlay Sampling Methodology
CN101158818A (en) Alignment apparatus, alignment method and imagery quality detecting method
KR20070008665A (en) Alignment condition decision method and device, and exposure method and device
CN106569390A (en) A projection exposure device and method
US20150029498A1 (en) Monitoring changes in photomask defectivity
CN107290937A (en) A kind of projection aligner and method
CN102466977B (en) Mark structure used for measuring distortion of projection object lens and its method
TW201510679A (en) Method of obtaining position, exposure method, and method of manufacturing article
CN105892241B (en) A kind of device and method of litho machine large area static state focusing and leveling
CN104977812B (en) Exposure device and the method for manufacturing article
CN102109767A (en) Method and system for determining alignment precision matching between lithography machines
US8373147B2 (en) Exposure apparatus and device manufacturing method
CN103885295B (en) A kind of exposure device and focusing and leveling method thereof
KR20160052198A (en) Method of obtaining location information of dies
KR20210062716A (en) Determination of defect location using correction loops for pixel alignment
CN103365098A (en) Alignment mark for exposure device
CN106154760B (en) A kind of exposure device and exposure method
CN107024185A (en) A kind of basal surface type measuring method and measurement apparatus
JP3823477B2 (en) Image measuring device
JP4040668B2 (en) Position detection apparatus and method, exposure apparatus, and device manufacturing method
CN109426093A (en) A kind of focusing-levelling detection device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525

Applicant after: Shanghai microelectronics equipment (Group) Limited by Share Ltd

Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525

Applicant before: Shanghai Micro Electronics Equipment Co., Ltd.

GR01 Patent grant
GR01 Patent grant