CN104567665A - Detection method of control wafer and nozzle in gumming developer - Google Patents
Detection method of control wafer and nozzle in gumming developer Download PDFInfo
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- CN104567665A CN104567665A CN201310520271.5A CN201310520271A CN104567665A CN 104567665 A CN104567665 A CN 104567665A CN 201310520271 A CN201310520271 A CN 201310520271A CN 104567665 A CN104567665 A CN 104567665A
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- nozzle
- control wafer
- detection method
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- coating developing
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a detection method of a control wafer and a nozzle in a gumming developer. The method comprises the following steps: arranging a scale at the center of the control wafer, coating a photoresist on the control wafer, performing critical exposure, performing developing, then observing whether spots exist at the center of the control wafer or not, reading out a radius R if spots exist at the center of the control wafer, working out an offset y according a formula that Y is equal to minus 0.317r2 plus 3.2r plus 0.02, and then performing nozzle adjustment in a first direction, so that the nozzle can be accurately adjusted. A unit where the nozzle is located does not need to be opened, and the method is efficient and effective.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to the detection method of nozzle in a kind of control wafer and coating developing machine.
Background technology
The manufacturing of integrated circuit is a very complicated process, and wherein, photoetching technique is one of the most complicated technology, is also the important motivity promoting integrated circuit technology development, the whether powerful performance that directly decide chip of photoetching technique.
Generally, photoetching process comprises coating photoresistance, carries out exposing according to mask plate and the process such as development.Wherein, such as developing process is in coating developing machine, utilize nozzle to spray developing liquid on the wafer after exposure, then rotates wafer, developer solution is evenly distributed.Fig. 1 shows the relation of nozzle 2 and wafer 1 under normal circumstances, visible, and nozzle 2 is in a strip, and be positioned at a diametric(al) above wafer 1, the side towards wafer 1 has multiple spout 21.But the impact of the various factors brought along with constantly using, the position of nozzle 2 can offset, and will cause developer solution abnormal distribution, thus can affect the critical size (CD) of product, and causes other defect.
At present, conventional detection method opens the unit (unit) being provided with this nozzle, carries out visual inspection by technician.And; this operation limit due to equipment itself, arbitrarily can not carry out, must shut down and operate; and open this unit and also easily introduce other problems; also need after adjustment to carry out survey machine (monitor), can waste a large amount of time, this is also unallowed in the factory; therefore usually only detect when periodic maintenance (PM); and the cycle of PM is usually at one month, this just causes both not had intuitive and reliable standard to the detection of nozzle, can not measuring and adjustation in addition in time.This just leaves hidden danger to semiconductor fabrication.
Summary of the invention
The object of the invention is to, the detection method of nozzle in a kind of control wafer and coating developing machine is provided, with quantitative degrees of offset nozzle being detected, and avoid opening equipment and detect, improve Detection results.
For solving the problems of the technologies described above, the invention provides a kind of control wafer, for detecting the skew of nozzle in coating developing machine, described control wafer center is provided with scale.
Optionally, for described control wafer, the zero graduation of described scale corresponds to the center of described control wafer, extends identical distance respectively to relative both sides.
Optionally, for described control wafer, the distance that described scale extends to both sides from zero graduation is less than 6mm.
The invention provides the detection method of nozzle in a kind of coating developing machine, for detecting and adjusting the position of the nozzle of developer solution, comprising:
Control wafer as above is provided;
Coating photoresistance in described control wafer, and carry out threshold exposure;
Utilize described nozzle to apply developer solution, described control wafer is developed;
Observe described control wafer center and whether there is spot, if there is spot, read the radius r of described spot;
According to formula y=-0.317r
2+ 3.2r+0.02, calculates to obtain side-play amount y carry out adjustment nozzle in conjunction with first direction.
Optionally, for the detection method of nozzle in described coating developing machine, described side-play amount y is less than or equal to 8mm.
Optionally, for the detection method of nozzle in described coating developing machine, the finding method of the energy value of described threshold exposure is:
One test wafers is provided, and coating photoresistance;
Described test wafers is divided into multiple exposing unit, and each exposing unit changes according to the variable quantity of the energy value of existing exposure parameter according to setting, and exposes;
Observe the test wafers after exposure, to obtain the energy value of threshold exposure.
Optionally, for the detection method of nozzle in described coating developing machine, direction when described first direction is vertical described nozzle hydrojet.
Optionally, for the detection method of nozzle in described coating developing machine, described adjustment nozzle is by the distance of first direction towards described spot translational offsets amount y.
Optionally, for the detection method of nozzle in described coating developing machine, adopt control wafer described in observation by light microscope and read the radius of described spot.
Optionally, for the detection method of nozzle in described coating developing machine, if described control wafer center immaculate, then described nozzle location is accurate.
Compared with prior art, in control wafer provided by the invention and coating developing machine nozzle detection method in, the center of described control wafer is provided with scale, after exposure imaging is carried out to this control wafer, observe control wafer center and whether there is spot, if there is spot, then according to formula and first direction, nozzle is adjusted, thus accurate position of correcting nozzle can be reached, the situation avoiding artificial macroscopic inaccuracy and high level error occurs.Meanwhile, adopt this method conveniently exposure imaging flow process to carry out, do not need to open corresponding unit, effectively can avoid the interference to equipment.Method of the present invention further improves the long defect of sense cycle, thus it is abnormal effectively to prevent product to occur.
Accompanying drawing explanation
Fig. 1 is the structural representation of nozzle in coating developing machine in prior art and one embodiment of the invention;
Fig. 2 is the schematic diagram of the scale of control wafer in one embodiment of the invention;
Fig. 3 is the process flow diagram of the detection method of nozzle in coating developing machine in one embodiment of the invention;
Fig. 4 is the control wafer schematic diagram after the development obtained when skew occurs nozzle in the detection method of nozzle in coating developing machine in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, the detection method of nozzle in control wafer of the present invention and coating developing machine is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, provides the detection method of nozzle in a kind of coating developing machine.Inventor is finding after research, when after nozzle offset, the developer solution of its ejection is at meeting skewness after the rotation of wafer, this developer solution be distributed in when wafer is under certain exposure energy, center wafer can be made to produce one and other circle spot of the obvious shade deviation of surrounding, and the size of this spot is relevant with nozzle offset degree.So, by measuring the size of spot, and finding the relation between spot and nozzle offset amount, just can regulate and control the position of nozzle accurately.
Below enumerate the preferred embodiment of the detection method of nozzle in described control wafer and coating developing machine, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
Based on above-mentioned thought, first the present invention designs a kind of control wafer (control wafer, CW), and described control wafer center is provided with scale, and the size of this control wafer is consistent with being generally used for the control wafer of producing product, to obtain optimum efficiency.Please refer to Fig. 2, the zero graduation of described scale corresponds to the center of described control wafer, namely the cross central point below numeral 0 is positioned in Fig. 2, then identical distance is extended respectively to relative both sides, in the present embodiment, described scale is 6mm from the distance that zero graduation extends to both sides, generally, also can select to be less than 6mm, this is due to when skew occurs nozzle but equipment still operates, the radius of the spot formed is less, when nozzle offset is larger, when the radius of the spot that namely can be formed is greater than 6mm, automatic alarm to be shut down by equipment usually, and nozzle also directly can be readjusted the standard in the state making equipment operate by those skilled in the art, therefore, it is not cannot that setting scale is greater than 6mm, but under the management and control of board itself, need not be like this.Certainly, may be limited to different equipment has different specifications, still can there is nozzle offset comparatively large but still in the situation of running, then can optionally make the metrics range of scale expand.
Preferably, this scale can be adopt etching technics to be formed in control wafer, also can be adopt depositing operation to form the comparatively stable metal or alloy of physico-chemical property, or inorganics etc.
Described in detail to the detection method of nozzle in coating developing machine of the present invention below, this method, for detecting and adjusting the position of the nozzle of developer solution, please refer to Fig. 3, comprising:
Carry out step S101, provide control wafer, the center namely described in the present invention is provided with the control wafer of scale.Preferably, first described control wafer is cleaned, remove the impurity that control wafer may exist, avoid producing interference to measurement.
Then, carry out step S102, coating photoresistance in described control wafer, and carry out threshold exposure.In the process, need the energy value first searching out threshold exposure, its finding method is:
First sub-step S1021, provides a test wafers, and coating photoresistance;
Second sub-step S1022, is divided into multiple exposing unit by described test wafers, and each exposing unit changes according to the variable quantity of the energy value of existing exposure parameter according to setting, and exposes, such as, test wafers is evenly divided into several exposing units according to scan-type, to be positioned at one or two exposing unit of test wafers center for benchmark, adopt normal exposure parameter, then make to reduce a respectively away from the energy value of the exposing unit in the direction of this one or two exposing unit successively, 1.5a, 2a, 2.5a wherein, a is positive number, concrete numerical value can set according to existing exposure parameter and empirical value, energy value due to normal exposure parameter is normally greater than the energy value of threshold exposure, therefore adopt this process to be the energy value that can search out threshold exposure.
3rd sub-step S1023, observe the test wafers after exposure, such as can at ADI(after development inspection) observe in equipment, when find exposing unit be black and white mingle color time, then the energy value corresponding to this exposing unit is the energy value of threshold exposure.
After exposure, carry out step S103, utilize described nozzle to apply developer solution, described control wafer is developed.
Then, carry out step S104, observing described control wafer center under an optical microscope and whether there is spot, such as, is in ADI equipment, if there is spot, reads the radius r of described spot.
Afterwards, carry out step S105, according to formula y=-0.317r
2+ 3.2r+0.02, calculates to obtain side-play amount y, and carries out adjustment nozzle in conjunction with first direction.
Usually, described side-play amount y is less than or equal to 8mm, if the side-play amount y calculated by above-mentioned formula is greater than 8mm, then re-start above-mentioned steps S101 ~ S105, when the side-play amount to calculate for twice is all greater than 8mm, then it is abnormal to be that equipment exists, and should carry out the inspection work be associated.
Direction when described first direction is vertical described nozzle hydrojet.Please refer to Fig. 4, spot 12 is there is in control wafer 10, and straight line 11, in practical operation, this straight line 11 may be desultory, this does not affect judgement, the reason that this straight line 11 exists is when being nozzle hydrojet and control wafer 10 geo-stationary, then produce developer solution at straight line 11 place, control wafer 10 rotates and is evenly distributed by developer solution afterwards, but inevitably, other regions are greater than at the developer solution effect degree at straight line 11 place, therefore this straight line 11 can be formed, known (such as breach (notch) towards) in conjunction with the reference position of control wafer when described nozzle place unit, just can correspond to nozzle by straight line 11 thus.Obvious, as shown in Figure 4, this straight line 11 should towards described spot translation, then correspondence is in nozzle, can by the distance of nozzle according to this direction (i.e. arrow direction in Fig. 4) mobile side-play amount y.Correct in order to ensure operation, can repeat a said process, if exist at control wafer center immaculate, then described nozzle location is accurate.
In control wafer provided by the invention and coating developing machine nozzle detection method in, the center of described control wafer is provided with scale, after exposure imaging is carried out to this control wafer, observe control wafer center and whether there is spot, if there is spot, then adjust nozzle according to formula and first direction, thus can reach accurate position of correcting nozzle, the situation avoiding artificial macroscopic inaccuracy and high level error occurs.Meanwhile, adopt this method conveniently exposure imaging flow process to carry out, do not need to open corresponding unit, effectively can avoid the interference to equipment.Method of the present invention further improves the long defect of sense cycle, thus it is abnormal effectively to prevent product to occur.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a control wafer, for detecting the skew of nozzle in coating developing machine, is characterized in that, described control wafer center is provided with scale.
2. control wafer as claimed in claim 1, is characterized in that, the zero graduation of described scale corresponds to the center of described control wafer, extends identical distance respectively to relative both sides.
3. control wafer as claimed in claim 2, it is characterized in that, the distance that described scale extends to both sides from zero graduation is less than 6mm.
4. the detection method of nozzle in coating developing machine, for detecting and adjusting the position of the nozzle of developer solution, comprising:
There is provided as the control wafer in claim 1-3 as described in any one;
Coating photoresistance in described control wafer, and carry out threshold exposure;
Utilize described nozzle to apply developer solution, described control wafer is developed;
Observe described control wafer center and whether there is spot, if there is spot, read the radius r of described spot;
According to formula y=-0.317r
2+ 3.2r+0.02, calculates to obtain side-play amount y carry out adjustment nozzle in conjunction with first direction.
5. the detection method of nozzle in coating developing machine as claimed in claim 4, it is characterized in that, described side-play amount y is less than or equal to 8mm.
6. the detection method of nozzle in coating developing machine as claimed in claim 4, it is characterized in that, the finding method of the energy value of described threshold exposure is:
One test wafers is provided, and coating photoresistance;
Described test wafers is divided into multiple exposing unit, and each exposing unit changes according to the variable quantity of the energy value of existing exposure parameter according to setting, and exposes;
Observe the test wafers after exposure, to obtain the energy value of threshold exposure.
7. the detection method of nozzle in coating developing machine as claimed in claim 4, is characterized in that, direction when described first direction is vertical described nozzle hydrojet.
8. the detection method of nozzle in coating developing machine as claimed in claim 7, it is characterized in that, described adjustment nozzle is by the distance of first direction towards described spot translational offsets amount y.
9. the detection method of nozzle in coating developing machine as claimed in claim 4, is characterized in that, adopts control wafer described in observation by light microscope and reads the radius of described spot.
10. the detection method of nozzle in coating developing machine as claimed in claim 4, it is characterized in that, if described control wafer center immaculate, then described nozzle location is accurate.
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| CN105606022A (en) * | 2015-11-24 | 2016-05-25 | 山东禹王生态食业有限公司 | Nozzle detection device and method |
| CN108183077A (en) * | 2016-12-08 | 2018-06-19 | 中芯国际集成电路制造(上海)有限公司 | A kind of monitoring method of photoresist quantity for spray |
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| CN104567665B (en) | 2017-12-22 |
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