CN108181524B - Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device - Google Patents

Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device Download PDF

Info

Publication number
CN108181524B
CN108181524B CN201711375663.1A CN201711375663A CN108181524B CN 108181524 B CN108181524 B CN 108181524B CN 201711375663 A CN201711375663 A CN 201711375663A CN 108181524 B CN108181524 B CN 108181524B
Authority
CN
China
Prior art keywords
electronic system
proton
failure
ion
single event
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711375663.1A
Other languages
Chinese (zh)
Other versions
CN108181524A (en
Inventor
丁李利
陈伟
郭晓强
张凤祁
王坦
潘霄宇
徐娜军
李斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northwest Institute of Nuclear Technology
Original Assignee
Northwest Institute of Nuclear Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northwest Institute of Nuclear Technology filed Critical Northwest Institute of Nuclear Technology
Priority to CN201711375663.1A priority Critical patent/CN108181524B/en
Publication of CN108181524A publication Critical patent/CN108181524A/en
Application granted granted Critical
Publication of CN108181524B publication Critical patent/CN108181524B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

The invention provides an evaluation method for obtaining single event effect sensitivity of an electronic system by irradiating a bottom layer device, which fully considers the actual conditions of different failure criteria of the electronic system and the bottom layer device, evaluates the single event effect sensitivity of the whole electronic system by irradiating the bottom layer devices in the electronic system one by one and performing probability synthesis, and solves the technical problems that the obvious failure criteria of the bottom layer device and the electronic system are different and the single event protection measures are diversified in the conventional system-level single event effect sensitivity evaluation method.

Description

Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device
Technical Field
The invention belongs to the technical field of single event effect evaluation of an aerospace electronic system, and particularly relates to an evaluation method for obtaining single event effect sensitivity of an electronic system by irradiating a bottom device.
Background
The single event effect is one of the common spatial radiation effects of electronic systems in aerospace applications. In recent years, commercial off-the-shelf (COTS) devices have been increasingly used in electronic systems to save cost and shorten development cycle, and efforts have been made to ensure the reliability of on-track irradiation of electronic systems by system-level reinforcement. In order to quantitatively evaluate the single event failure rate of an electronic system and verify the effectiveness of a reinforcement technology, the evaluation work of the system-level single event effect sensitivity is necessary to be carried out.
The radiation test is the most direct way to obtain the radiation resistance index, and the evaluation of the radiation resistance index of a single device by using a ground simulation device is a relatively mature work. Considering that the beam spot size provided by the domestic heavy ion irradiation environment is in the centimeter magnitude, the whole system cannot be directly irradiated to evaluate the single event effect sensitivity.
In order to solve the problem, in the patent CN105893664, "a system-level single event effect characterization parameter and evaluation method", it is proposed to establish a system function model with components as a base event according to system function analysis, and calculate the system single event rate by determining the single event effect transfer factor between the layers of the system and based on the superposition principle of single event. In patent CN103605835A "spacecraft system level anti-single particle design and evaluation method" and patent CN105117576 "spacecraft system level single particle upset impact analysis method based on fault propagation", it is proposed to gradually carry out single particle upset fault rate calculation from device to single machine and system based on system composition, and evaluate the impact of single particle effect on the system. The common characteristic of these works is that the failure rate calculation is executed step by step according to the form of device, single machine and system, the relationship between the components in the same layer is simplified and approximated according to the principle of series and parallel connection, especially the failure rate equivalence is carried out in the linear relationship on the influence brought by the system level reinforcement technology. The existing problems are particularly shown in that:
1) the method only uses the single event error data of the bottom-layer device which is not applied to the electronic system as the calculation basis, does not consider the failure criterion of different levels, particularly the obvious difference between the device level and the system level, for example, when the stored data in the bottom-layer device is changed (single event upset occurs), the system level only can show visible single event errors due to the limitation of system resource occupation and working mode.
2) The influence of a system-level reinforcement technology on failure rate is measured only by adopting a simple linear relation, and the diversity of single-particle protection measures is not considered, which is referred to in patent CN104461811A "a hierarchical and hierarchical spacecraft single-particle soft error protection system mechanism".
Disclosure of Invention
In order to solve the technical problems that the existing system-level single event effect sensitivity evaluation method does not consider the difference of obvious failure criteria between a bottom-layer device and an electronic system and the diversity of single event protection measures, the invention provides an evaluation method for obtaining the single event effect sensitivity of the electronic system by irradiating the bottom-layer device, which is used for accurately and visually obtaining the failure rate index of the system.
The technical solution of the invention is as follows:
the invention discloses an evaluation method for obtaining electronic system single event effect sensitivity by irradiating a bottom device, which is characterized by comprising the following steps:
1) determining an analysis object
The analysis object is an electronic system which comprises all bottom layer devices and can execute normal functions, and the contained bottom layer devices are connected to the electronic system;
2) determining an operating state of an electronic system
The electronic system is in a power-up mode, and all required excitation signals need to be accessed, so that the electronic system is ensured to execute normal functions;
3) evaluation of irradiation
3.1) setting the working modes of the electronic system, wherein the working modes comprise a reinforced mode and a non-reinforced mode;
3.2) irradiating bottom layer devices in the electronic system one by one in a heavy ion environment, counting the failure times of the electronic system according to a system failure criterion, calculating a single-particle error section according to the failure times, and acquiring at least five groups of data points for each device, wherein the data points represent that the contribution of the device to the single-particle error section of the system and the linear energy transfer value of heavy ions have a corresponding relationship;
3.3) irradiating the bottom devices in the electronic system one by one in a proton environment, counting the failure times of the electronic system according to a system failure criterion, calculating a single-particle error section according to the failure times, and obtaining at least five groups of data points representing that the device has a corresponding relation between the contribution of the device to the single-particle error section of the system and a proton energy value by each device;
3.4) respectively carrying out Weibull curve fitting on the heavy ion irradiation data points and the proton irradiation data points of each device one by one, wherein the fitting curve equation is shown as the formula (1) and the formula (2):
Figure BDA0001514585590000041
wherein σion,i(LET) is the time of heavy ion irradiation of the ith bottom layer deviceSection of subsystem with single-particle error, sigmasat,ion,i、L0,ion,i、Wion,iAnd Sion,iSequentially and respectively corresponding to a saturation section, an LET threshold, a scale parameter and a shape parameter of a Weibull fitting curve of a single-particle error section of the electronic system when the ith bottom-layer device is irradiated by heavy ions;
Figure BDA0001514585590000042
wherein σproton,i(E) Section, sigma, for single event error of electronic system when proton irradiates ith bottom devicesat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iSequentially and respectively corresponding to a saturation section, an energy threshold, a scale parameter and a shape parameter of a Weibull fitting curve of a single-particle error section of the electronic system when the proton irradiates the ith bottom-layer device;
3.5) determining a heavy ion LET spectrum and a proton energy spectrum according to the selected spacecraft orbit parameters, the solar activity condition and the shielding parameters;
fitting parameter sigma of Weibull curvesat,ion,i、L0,ion,i、Wion,i、Sion,i、σsat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iThe single particle sensitivity of each bottom layer device is represented by using the single particle sensitivity of the system;
calculating the failure rate of the on-orbit system corresponding to each bottom layer device according to the LET spectrum of the heavy ions, the proton energy spectrum and the fitting parameters of the Weibull curve;
3.6) failure rate lambda of electronic system in single event error in specific space radiation environmentTotal＝∑iλiWherein λ isiRepresenting the failure rate of the on-track system corresponding to the ith bottom-layer device.
Furthermore, in order to verify the effectiveness of the system level radiation-resistant reinforcing measures, whether the reinforcing measures are effective or not is judged by comparing the failure rate of single-event errors of the electronic system working in a non-reinforcing mode and a reinforcing mode, and when the failure rate of the electronic system under the reinforcing condition is obviously lower than that under the non-reinforcing condition, the adopted system level radiation-resistant reinforcing measures can be considered to be effective.
Further, based on experience, various phenomena of single event errors of the electronic system are summarized, a failure criterion of the system is determined, and the system failure criterion in the step 3.2) and the step 3.3) comprises the following three types:
1) monitoring the output of the electronic system while continuously inputting data vectors or analog signals to the electronic system, and judging that system data errors occur when the output value of the electronic system is inconsistent with an expected value;
2) when the command operation of erasing/resetting/unloading/answering type is executed on the complex electronic system, whether the electronic system can normally respond is checked, and when the electronic system cannot normally respond, the system error is judged to occur; .
3) And monitoring whether normal or fault prompt information can be output according to preset information or not aiming at the electronic system with the self-detection function, and if not, judging that a system error occurs.
Wherein, the continuous input data vector or the analog signal monitoring output in 1) is the most common and basic and is used for judging the data error of the system; 2) in order to check the electronic system for functional errors; 3) the method is a supplement for an electronic system which can monitor internal information and judge whether the electronic system works normally in the running process.
Further, in order to irradiate the bottom layer devices in the electronic system one by one, the bottom layer devices in the electronic system in the step 3.2) and the step 3.3) are arranged on the same side of the circuit boards, if the electronic system comprises a plurality of circuit boards, all the circuit boards are spread out to be positioned on the same plane, and the circuit boards in the electronic system are interconnected by adopting flexible cables.
Further, when the system failure rate corresponding to each underlying device is calculated in step 3.5) according to the fit parameters of the heavy ion LET spectrum, the proton energy spectrum and the Weibull curve, a self-programming mode or a mode using commercial estimation software can be selected, wherein the optional commercial estimation software comprises SPACE identification or credit.
Estimation software SPACE RADIATION and
Figure BDA0001514585590000061
the method is the classical software for calculating the single event failure rate, the greatest advantage of calculating the failure rate by means of the software is convenience and rapidness, self programming is feasible, and a large amount of useless time is spent.
Compared with the prior art, the invention has the advantages that:
1. the evaluation method for obtaining the single event effect sensitivity of the electronic system by irradiating the bottom layer device provided by the invention can be used for uniformly counting the error section aiming at the system level failure criterion, thereby avoiding the potential problem that the bottom layer device and the electronic system are different in obvious failure criterion and mutually solved through probability operation.
2. The evaluation method for obtaining the single event effect sensitivity of the electronic system by irradiating the bottom device provided by the invention avoids the problem that the relation between the total error cross section of the electronic system and the LET value or the proton energy of heavy ions does not comply with Weibull distribution due to great difference of the sensitivity of the devices when the contributions of all the bottom devices to the single event error cross section of the electronic system are directly summed when the failure rate of the electronic system is calculated. Normal single event effect data are subjected to Weibull distribution by default, and the next failure rate calculation work can be carried out on the basis of the Weibull distribution. If the Weibull distribution is not obeyed, fitting is in principle impossible and failure rate is estimated, in which case key characteristic information is missed if fitting is forced.
3. According to the evaluation method for obtaining the sensitivity of the single event effect of the electronic system by the irradiation bottom layer device, when the influence of the system level reinforcement technology on the failure rate is evaluated, the failure rate equivalence is carried out on the influence brought by the system level reinforcement technology in a linear relation mode, and the accurate estimation of the failure rate indexes of the electronic system before and after reinforcement can be realized.
4. The evaluation method for obtaining the sensitivity of the electronic system to the single event effect by the irradiation bottom layer device provided by the invention has the advantages that when the influence of the system level reinforcement technology on the failure rate is evaluated, the details of the internal structure of the system and the adopted system level radiation-resistant reinforcement measure are not required to be known, the method can be adopted by any system, and the operability is strong.
Drawings
FIG. 1 shows a schematic diagram of a typical electronic system consisting of underlying devices A, B, C, D, … …;
FIG. 2 is a schematic diagram showing the relationship among a device failure criterion, a single-machine failure criterion and a system failure criterion in single-particle sensitivity evaluation;
FIG. 3 is a graph showing the relationship between the single-particle error cross section and the heavy-ion LET value of a corresponding electronic system when different bottom-layer devices are irradiated.
Detailed Description
The invention provides a method for evaluating the single event effect sensitivity of the whole electronic system by irradiating bottom layer devices in the electronic system one by one and carrying out probability synthesis by fully considering the actual conditions of different failure criteria of the electronic system and the bottom layer devices when evaluating the single event effect sensitivity of the electronic system, wherein the preferred process specifically comprises the following steps:
1) determining an analysis object
The analysis object is an electronic system which comprises all bottom layer devices and can execute normal functions, and the contained bottom layer devices are all connected into the electronic system;
2) determining electronic system working state and arrangement mode
2.1) the electronic system is in a power-up mode, all required excitation signals need to be accessed, and the electronic system is ensured to execute normal functions;
2.2) bottom layer devices in the electronic system are all arranged on the same side of the circuit boards, if the electronic system comprises a plurality of circuit boards, all the circuit boards are spread out to be on the same plane, and flexible cables are preferentially adopted for interconnection among the circuit boards;
3) determining failure criterion of electronic system
The system failure criteria include the following three:
1) monitoring the output of the electronic system while continuously inputting data vectors or analog signals to the electronic system, and judging that system data errors occur when the output value of the electronic system is inconsistent with an expected value;
2) when the command operation of erasing/resetting/unloading/answering type is executed on the complex electronic system, whether the electronic system can normally respond is checked, and when the electronic system cannot normally respond, the system error is judged to occur;
3) and monitoring whether normal or fault prompt information can be output according to preset information or not aiming at the electronic system with the self-detection function, and if not, judging that a system error occurs.
4) One-by-one irradiation of underlying devices in an electronic system in a radiation environment
4.1) setting the system to work in a non-reinforcement mode, namely, applying a non-reinforcement backup machine to simultaneously run a non-reinforcement software version;
4.2) irradiating bottom devices in the electronic system one by one in a heavy ion environment, counting the failure times of the electronic system according to the system failure criterion given in the step 3), calculating a single-particle error section according to the failure times, and acquiring at least five groups of data points for each device, wherein the data points represent that the device has a corresponding relationship between the contribution of the device to the single-particle error section of the system and the linear energy transfer value of the heavy ions;
4.3) irradiating the bottom devices in the electronic system one by one in a proton environment, counting the failure times of the electronic system according to a system failure criterion, calculating a single-particle error section according to the failure times, and obtaining at least five groups of data points representing that the device has a corresponding relation with the contribution of the single-particle error section of the system and a proton energy value;
4.4) Weibull curve fitting was performed on the heavy ion irradiation data points and proton irradiation data points of each device one by one, as follows:
Figure BDA0001514585590000091
Figure BDA0001514585590000092
wherein sigmaion,i(LET) is the cross section of the electronic system with single particle error when the ith bottom device is irradiated by heavy ions, sigmasat,ion,i、L0,ion,i、Wion,iAnd Sion,iThe error section of a single particle of an electronic system when the ith bottom layer device is irradiated by heavy ionsThe Weibull fit curve of (a) corresponds to the saturation cross section, LET threshold, scale parameter and shape parameter. Sigmaproton,i(E) Section, sigma, for single event error of electronic system when proton irradiates ith bottom devicesat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iRespectively corresponding a Weibull fitting curve of the error section of the electronic system single event to a saturated section, an energy threshold, a scale parameter and a shape parameter when the proton irradiates the ith bottom layer device;
4.5) determining a heavy ion LET spectrum and a proton energy spectrum according to the selected spacecraft orbit parameters, the solar activity condition and the shielding parameters, utilizing the fitting parameters of a Weibull curve as input parameters for representing the contribution of each bottom device to the single-particle sensitivity of the system, and adopting prediction software SPACE simulation and prediction software based on an RPP (parallelepiped) model
Figure BDA0001514585590000101
Calculating the failure rate, lambda, of the on-track system corresponding to each bottom deviceiAnd the failure rate of the in-orbit system of the ith bottom-layer device is represented, namely the number of single-event errors of the electronic system caused by a single device in unit time.
4.6) failure rate lambda of electronic system in single event error in specific space radiation environmentTotal＝∑iλi。
5) Verifying effectiveness of system-level radiation-resistant reinforcement measures
5.1) setting the system to work in a reinforcement mode, namely applying a reinforcement backup machine and simultaneously operating a reinforcement software version;
5.2) repeating the steps 4.2) -4.6), and calculating the failure rate of the electronic system with single event errors when the electronic system works in the reinforcement mode;
5.3) the system level radiation-resistant reinforcement measures employed can be considered effective when the failure rate of the electronic system under reinforcement is significantly lower than under non-reinforcement.
The invention is further elucidated with reference to the drawing.
Fig. 1 illustrates a typical system comprising a plurality of devices, which are named A, B, C, D, ….
Fig. 2 shows the relationship among the criterion of device failure, the criterion of stand-alone failure, and the criterion of system failure, and it can be seen that device failure and stand-alone failure must occur simultaneously when a system fails, but device failure may not necessarily cause stand-alone failure or system failure. For a certain electronic system, the failure criterion of the bottom layer device is that the storage bit in the device is subjected to state inversion; the failure criterion of the single machine level is related to the performance of specific single machine execution, such as the error rate index of a signal processing platform, the failure to normally respond to the instruction given by a platform system, the failure of uploading data packets on time, the failure of normally responding to remote control and remote measuring instructions, and the like; the failure criterion of the whole system is more macroscopic, and is represented by the fact that the response time of the system to an instruction is smaller than a certain value, the time interval of data downloading of the system is smaller than a certain value and the like.
When the irradiation test is carried out, the bottom layer devices in the electronic system are arranged on the same side of the circuit boards, if the electronic system comprises a plurality of circuit boards, all the circuit boards are spread out to be on the same plane, the interconnection among the circuit boards preferably adopts a flexible cable, and the irradiation of the bottom layer devices by the radiation particles can be realized one by one under the condition.
Fig. 3 shows the relationship between the single-particle error cross section of the electronic system corresponding to the irradiation bottom layer device A, B, C in the heavy ion environment and the LET value of the heavy ion, and it can be seen that the threshold and the saturation cross section of the single-particle functional interruption of the system level corresponding to the three devices are different. If the total cross section of the system is calculated by direct addition, the obtained curve obviously does not conform to the form of Weibull distribution, and the failure rate on a specific track cannot be further calculated. According to the given flow in the step 4), heavy ion induced on-orbit failure rates corresponding to different devices are calculated through Weibull fitting and turnover rate estimation software based on an RPP model, proton induced on-orbit failure rates corresponding to different devices are calculated according to the same flow, and accordingly, electronic system failure rates corresponding to irradiation single devices are calculated. Finally, since the failure of the system is equivalent to the failure of all the bottom-layer devices, the failure rate of the electronic system can be calculated according to the step 4.6).

Claims (5)

1. The method for evaluating the sensitivity of the single event effect of the electronic system obtained by irradiating the bottom device is characterized by comprising the following steps of:
1) determining an analysis object
The analysis object is an electronic system which comprises all bottom layer devices and can execute normal functions, and the contained bottom layer devices are connected to the electronic system;
2) determining an operating state of an electronic system
The electronic system is in a power-up mode, and all required excitation signals need to be accessed, so that the electronic system is ensured to execute normal functions;
3) evaluation of irradiation
3.1) setting the working modes of the electronic system, wherein the working modes comprise a reinforced mode and a non-reinforced mode;
3.2) irradiating bottom layer devices in the electronic system one by one in a heavy ion environment, counting the failure times of the electronic system according to a system failure criterion, calculating a single-particle error section according to the failure times, and acquiring at least five groups of data points for each device, wherein the data points represent that the contribution of the device to the single-particle error section of the system and the linear energy transfer value of heavy ions have a corresponding relationship;
the system failure criteria include the following three:
a) monitoring the output of the electronic system while continuously inputting data vectors or analog signals to the electronic system, and judging that system data errors occur when the output value of the electronic system is inconsistent with an expected value;
b) when the command operation of erasing/resetting/unloading/answering type is executed on the complex electronic system, whether the electronic system can normally respond is checked, and when the electronic system cannot normally respond, the system error is judged to occur;
c) monitoring whether normal or fault prompt information can be output according to a preset value or not aiming at an electronic system with a self-detection function, and if not, judging that a system error occurs;
3.3) irradiating the bottom devices in the electronic system one by one in a proton environment, counting the failure times of the electronic system according to a system failure criterion, calculating a single-particle error section according to the failure times, and obtaining at least five groups of data points representing that the device has a corresponding relation between the contribution of the device to the single-particle error section of the system and a proton energy value by each device;
the system failure criteria include the following three:
a) monitoring the output of the electronic system while continuously inputting data vectors or analog signals to the electronic system, and judging that system data errors occur when the output value of the electronic system is inconsistent with an expected value;
b) when the command operation of erasing/resetting/unloading/answering type is executed on the complex electronic system, whether the electronic system can normally respond is checked, and when the electronic system cannot normally respond, the system error is judged to occur;
c) monitoring whether normal or fault prompt information can be output according to a preset value or not aiming at an electronic system with a self-detection function, and if not, judging that a system error occurs;
3.4) respectively carrying out Weibull curve fitting on the heavy ion irradiation data points and the proton irradiation data points of each device one by one, wherein the fitting curve equation is shown as the formula (1) and the formula (2):
Figure FDA0002547548960000021
wherein σion,i(LET) is the cross section of the electronic system with single particle error when the ith bottom device is irradiated by heavy ions, sigmasat,ion,i、L0,ion,i、Wion,iAnd Sion,iSequentially and respectively corresponding to a saturation section, an LET threshold, a scale parameter and a shape parameter of a Weibull fitting curve of a single-particle error section of the electronic system when the ith bottom-layer device is irradiated by heavy ions;
Figure FDA0002547548960000022
wherein σproton,i(E) Section, sigma, for single event error of electronic system when proton irradiates ith bottom devicesat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iSequentially irradiating the ith bottom layer device for protonsThe method comprises the following steps that saturation sections, energy thresholds, scale parameters and shape parameters corresponding to Weibull fitting curves of single-particle error sections of an electronic system during assembly are obtained;
3.5) determining a heavy ion LET spectrum and a proton energy spectrum according to the selected spacecraft orbit parameters, the solar activity condition and the shielding parameters;
fitting parameter sigma of Weibull curvesat,ion,i、L0,ion,i、Wion,i、Sion,i、σsat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iThe single particle sensitivity of each bottom layer device is represented by using the single particle sensitivity of the system;
calculating the failure rate of the on-orbit system corresponding to each bottom layer device according to the LET spectrum of the heavy ions, the proton energy spectrum and the fitting parameters of the Weibull curve;
3.6) failure rate lambda of electronic system in single event error in specific space radiation environmentTotal＝∑iλiWherein λ isiRepresenting the failure rate of the on-track system corresponding to the ith bottom-layer device.
2. The method for evaluating the single event effect sensitivity of an electronic system obtained by irradiating an underlying device according to claim 1, further comprising, after the step 3):
step 4) verifying the effectiveness of the system-level irradiation-resistant reinforcement measures
And comparing the failure rates of the electronic system in single event errors when the electronic system works in a non-reinforcement mode and a reinforcement mode, and when the failure rate of the electronic system is obviously lower than that of the electronic system under the reinforcement condition, considering that the adopted system-level anti-radiation reinforcement measure is effective.
3. The method for evaluating the sensitivity of the irradiation bottom layer device to the single event effect of the electronic system according to claim 1, wherein the method comprises the following steps:
in step 3.2) and step 3.3), the bottom devices in the electronic system are all arranged on the same side of the circuit board, and if the electronic system comprises a plurality of circuit boards, all the circuit boards are spread out to be on the same plane.
4. The method for evaluating the sensitivity of the irradiation bottom layer device to the single event effect of the electronic system according to claim 3, wherein the method comprises the following steps:
and 3.2) and 3.3) interconnecting the circuit boards in the electronic system by adopting flexible cables.
5. The method for evaluating the sensitivity of the single event effect of the electronic system obtained by the irradiation of the bottom layer device according to any one of claims 1 to 4, wherein:
and 3.5) when the system failure rate corresponding to each bottom-layer device is calculated according to the fit parameters of the heavy ion LET spectrum, the proton energy spectrum and the Weibull curve, selecting a self-programming mode or a mode of utilizing commercial estimation software, wherein the optional commercial estimation software comprises SPACE RADIATION or CREME.
CN201711375663.1A 2017-12-19 2017-12-19 Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device Active CN108181524B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711375663.1A CN108181524B (en) 2017-12-19 2017-12-19 Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711375663.1A CN108181524B (en) 2017-12-19 2017-12-19 Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device

Publications (2)

Publication Number Publication Date
CN108181524A CN108181524A (en) 2018-06-19
CN108181524B true CN108181524B (en) 2020-10-09

Family

ID=62546444

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711375663.1A Active CN108181524B (en) 2017-12-19 2017-12-19 Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device

Country Status (1)

Country Link
CN (1) CN108181524B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111008514B (en) * 2019-10-28 2023-04-18 北京时代民芯科技有限公司 Simulation test method for anti-radiation reinforced module-level circuit
CN114460440B (en) * 2022-01-26 2023-09-12 中国科学院近代物理研究所 Integrated circuit single event effect positioning system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101900770B (en) * 2009-05-25 2013-01-16 北京圣涛平试验工程技术研究院有限责任公司 Method and system for assessing radiation resisting capability of device for satellite
CN105117576A (en) * 2015-07-13 2015-12-02 上海卫星工程研究所 Spacecraft system-level single event upset effect analysis method based on fault propagation
CN105718713B (en) * 2015-08-31 2018-07-13 北京圣涛平试验工程技术研究院有限责任公司 Space radiation environment analysis method for reliability
CN105893664B (en) * 2016-03-30 2019-01-15 北京空间飞行器总体设计部 A kind of system-level single particle effect influences the evaluation method of characterization parameter

Also Published As

Publication number Publication date
CN108181524A (en) 2018-06-19

Similar Documents

Publication Publication Date Title
CN110988969B (en) Atmospheric neutron radiation effect test method and device
US5561762A (en) Malicious fault list generation method
US8850272B2 (en) Method and system to measure preventability of failures of an application
CN108181524B (en) Method for evaluating sensitivity of single event effect of electronic system obtained by irradiating bottom device
US9898379B2 (en) Method for measuring the effect of microscopic hardware faults in high-complexity applications implemented in a hardware electronic system, and corresponding system and computer program product
Wang et al. A Bayesian framework for estimating fragility curves based on seismic damage data and numerical simulations by adaptive neural networks
Ruospo et al. A survey on deep learning resilience assessment methodologies
CN105548866A (en) SRAM type FPGA test method based on irradiation test environment simulation
CN110568347B (en) Rapid estimation method for single-particle function interruption rate of satellite-borne FPGA
Di Mascio et al. Towards defining a simplified procedure for COTS system-on-chip TID testing
CN105512372B (en) The data processing onboard emulation test method of modelling
CN102901924A (en) Method for testing single event upset characteristics of partial triple modular redundancy static random access memory (SRAM) type field programmable gate arrays (FPGA)
Babu et al. A hybrid approach to quantify software reliability in nuclear safety systems
Holt et al. Stale data analysis in intelligent transportation platooning models
CN110209547A (en) Refreshing frequency determines method and system when a kind of overturning of SRAM type FPGA single particle is fixed
Dugan et al. System reliability analysis of an N-version programming application
Cheung et al. Identifying and addressing uncertainty in architecture-level software reliability modeling
Ferrante et al. A methodology for formal requirements validation and automatic test generation and application to aerospace systems
Huang et al. On the development of fault injection profiles
CN107194090B (en) Method for estimating single-particle error rate cross section of anti-irradiation complex integrated circuit
Muta et al. Reliability enhancement of seismic risk assessment of npp as risk management fundamentals-development of a new mathematical framework for uncertainty analysis
Lawrence et al. System-Level Radiation Effects Modeling using Temporal Fault Trees
Biersdorf et al. Risk Importance Ranking of Fire Data Parameters to Enhance Fire PRA Model Realism
US20220114306A1 (en) Sensitivity analysis-based dependability trade-off analysis
CN117539734A (en) Evaluation method and device for memory abnormality resistance of power secondary equipment

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant