CN108181524A - Irradiate the evaluation method that bottom device obtains electronic system single particle effect sensibility - Google Patents
Irradiate the evaluation method that bottom device obtains electronic system single particle effect sensibility Download PDFInfo
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- CN108181524A CN108181524A CN201711375663.1A CN201711375663A CN108181524A CN 108181524 A CN108181524 A CN 108181524A CN 201711375663 A CN201711375663 A CN 201711375663A CN 108181524 A CN108181524 A CN 108181524A
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/001—Measuring interference from external sources to, or emission from, the device under test, e.g. EMC, EMI, EMP or ESD testing
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Abstract
The present invention provides a kind of evaluation methods for irradiating bottom device and obtaining electronic system single particle effect sensibility, fully take into account the electronic system actual state different from bottom component failure criterion, by irradiated electrons system midsole layer device one by one and probability synthesis is carried out to evaluate entire electronic system single particle effect sensibility, is solved existing system grade single particle effect sensitivity evaluation method and is not considered that bottom device is different from the apparent failure criteria of electronic system and the multifarious technical problem of single-particle safeguard procedures.
Description
Technical field
The invention belongs to astrionic system single particle effect assessment technology field, specifically a kind of irradiation bottom device
Obtain the evaluation method of electronic system single particle effect sensibility.
Background technology
Single particle effect is one of Space Radiation Effects that electronic system is common in AEROSPACE APPLICATION.In recent years, for save into
Originally, shorten the development cycle, more and more start, using commercial off-the-shelf (COTS) device, to strive by system-level in electronic system
Reinforcing means ensure the in-orbit irradiation reliability of electronic system.It is reinforced for quantitatively evaluating electronic system single-particle crash rate and verification
Technical validity, it is necessary to carry out system-level single particle effect sensitivity assessment work.
It is to obtain the most direct mode of Flouride-resistani acid phesphatase index to carry out irradiation test, and ground simulator is utilized to evaluate single device
The Flouride-resistani acid phesphatase index of part has been the work of comparative maturity.The beam spot size that can be provided in view of domestic heavy ion irradiation environment
For centimetres, it can not directly irradiate whole system and evaluate its single particle effect sensibility.
To solve this problem, in patent CN105893664, " a kind of system-level single particle effect influences characterization parameter and comments
In valency method ", it is proposed that according to analysis of system performance, the system functional model using component as bottom event is established, by determining system
Single particle effect between each level of uniting influences transmission factor, the additivity principle based on single event, computing system single-particle thing
Part rate.In patent CN103605835A " Space Vehicle System grade anti-single particle designs and appraisal procedure " and patent CN105117576
In " the Space Vehicle System grade single-particle inversion impact analysis method based on fault propagation ", it is proposed that formed based on system, from device
Gradually carry out single-particle inversion failure rate to unit, system to calculate, influence of the evaluation single particle effect to system.These work
Common trait is to perform failure rate calculating step by step according to the form of device, unit, system, by connection in series-parallel principle to same hierarchy component
Between relationship carry out simplifying approximation, the influence particularly brought to system-level reinforcement technique carries out crash rate with linear relation
It is equivalent.There are the problem of be in particular in：
1) single-particle error data when being not yet applied to electronic system merely with bottom device is basic as calculating, and does not examine
Between considering different levels, particularly device level and system-level visibly different failure criteria are changed as stored data in bottom device
It is system-level only certainly possible to show since system resource occupies, the limitation of operating mode during change (occur single-particle inversion)
Go out visible simple grain sub-error.
2) influence of the system-level reinforcement technique for crash rate is weighed only with simple linear relation, does not consider simple grain
The diversity of sub- safeguard procedures, referring to patent CN104461811A, " a kind of classification, with different levels spacecraft single-particle soft error are prevented
Protect architecture ".
Invention content
Do not consider that bottom device and electronic system are apparent to solve existing system grade single particle effect sensitivity evaluation method
Failure criteria is different and the multifarious technical problem of single-particle safeguard procedures, the present invention propose that a kind of irradiation bottom device obtains
The evaluation method of electronic system single particle effect sensibility, for it is accurate, intuitively obtain system failure rate index.
The present invention technical solution be：
The irradiation bottom device of the present invention obtains the evaluation method of electronic system single particle effect sensibility, special character
It is, includes the following steps：
1) analysis object is determined
The analysis object comprising all bottom devices and to be able to carry out the electronic system of normal function, comprising bottom
Layer device has accessed electronic system；
2) working condition of electronic system is determined
Electronic system is in powered-up mode, and institute's pumping signal in need is both needed to access, and it is normal to ensure that electronic system performs
Function；
3) irradiation evaluation
3.1) operating mode of electronic system is set, the operating mode includes reinforcement mode and non-reinforced pattern；
3.2) the bottom device in irradiated electrons system one by one in heavy ion environment, electricity is counted according to thrashing criterion
The Failure count of subsystem calculates single-particle error section according to Failure count, and every device is both needed to obtain at least five groups of tables
Show that the device has system single-particle error section contribution with heavy-ion linear energy transfer value the data point of correspondence；
3.3) the bottom device in irradiated electrons system one by one in proton environments, electronics is counted according to thrashing criterion
The Failure count of system calculates single-particle error section according to Failure count, and every device obtains at least five groups of expressions and is somebody's turn to do
Device has system single-particle error section contribution with proton energy value the data point of correspondence；
3.4) Weibull songs are carried out one by one to the heavy ion irradiation data point of every device and proton irradiation data point respectively
Line is fitted, shown in fit curve equation such as formula (1) and formula (2)：
Wherein, σion,i(LET) for i-th bottom device of heavy ion irradiation cutting for single-particle error occurs for electronic system when
Face, σsat,ion,i、L0,ion,i、Wion,iAnd Sion,iElectronic system single-particle when respectively being i-th bottom device of heavy ion irradiation
Malfunction saturation section, LET threshold values, scale parameter and form parameter corresponding to the Weibull matched curves in section；
Wherein, σproton,i(E) for i-th bottom device of proton irradiation the section of single-particle error occurs for electronic system when,
σsat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iElectronic system list when respectively being i-th bottom device of proton irradiation
Saturation section, energy threshold, scale parameter and form parameter corresponding to the Weibull matched curves in particle error section；
3.5) heavy ion LET spectrums and matter are determined according to selected spacecraft orbit parameter, solar activity situation, shielding parameter
Sub- power spectrum；
By the fitting parameter σ of Weibull curvessat,ion,i、L0,ion,i、Wion,i、Sion,i、σsat,proton,i、E0,proton,i、
Wproton,iAnd Sproton,iThe input parameter contributed as every bottom device of characterization system single-particle sensibility；
According to the fitting parameter of heavy ion LET spectrums, proton spectrum and Weibull curves, calculate every bottom device and correspond to
In-orbit system failure rate；
3.6) the crash rate λ of single-particle error occurs in particular space radiation environment for electronic systemTotal=∑iλi,
Middle λiRepresent the in-orbit system failure rate corresponding to i-th bottom device.
Further, the validity for the system-level radiation hardened measure of verification, the present invention is by comparing electronic system work
Make the crash rate of the error of the single-particle under non-reinforced pattern and reinforcement mode to judge whether reinforcement measure is effective, when reinforcing feelings
When electronic system crash rate is significantly lower than non-reinforced situation under condition, it is believed that used system-level radiation hardening measure is that have
Effect.
Further, the summary that all kinds of phenomenons of single-particle error carry out electronic system occurs based on experience, it is determined that
Thrashing criterion in the failure criteria of system, step 3.2) and step 3.3) includes following three kinds：
1) electronic system output, electronic system are monitored while continuing input data vector or analog signal to electronic system
There are system data errors in judgement when output valve is not inconsistent with desired value；
2) when the instruction operation of erasing/reset/unloading/acknowledgement type is performed to Complex Electronic Systems Based, electronic system is examined
Whether being capable of normal response, it is impossible to generating system error is judged during normal response；.
3) for the electronic system with self-checking function, monitoring whether can or fault cues letter normal by default output
Breath, if it could not, judgement generating system error.
Wherein 1) in continue input data vector or analog signal monitoring output be it is most common most basic, for differentiate be
The error in data that system occurs；2) it is the capability error in order to examine electronic system in；3) it is to be directed in operational process to monitor
The supplement that internal information discriminates whether electronic system working properly and does.
Further, it is electric in step 3.2) and step 3.3) for the bottom device in electronic system is made to be irradiated one by one
Bottom device in subsystem is arranged in circuit board the same side, if electronic system includes polylith circuit board, by all electricity
Road plate is spread out in same plane, is interconnected between the polylith circuit board that electronic system is included using flexible cable.
Further, according to the fitting parameter of heavy ion LET spectrums, proton spectrum and Weibull curves, meter in step 3.5)
When calculating the corresponding system failure rate of every bottom device, voluntarily programming can be selected or the mode of software is estimated using commercialization, it is optional
Commercialization estimate software include SPACE RADIATION or CREME.
Estimate software SPACE RADIATION andAll it is the classical software for calculating single-particle crash rate, dependence is soft
The benefit that part calculates crash rate maximum is exactly convenient and efficient, and voluntarily programming is also feasible, will only be spent a large amount of meaningless
Time.
Compared with prior art, the present invention advantage is：
1st, irradiation bottom device proposed by the present invention obtains the evaluation method of electronic system single particle effect sensibility, passes through
It is unified for system-level failure criteria statistics error section, avoided bottom device it is different from the apparent failure criteria of electronic system and
The potential problems asked for mutually by probabilistic operation.
2nd, irradiation bottom device proposed by the present invention obtains the evaluation method of electronic system single particle effect sensibility, is counting
When calculating electronic system crash rate, avoid and directly sum it up all bottom devices to the contribution in electronic system single-particle error section
When, electronic system is caused always to malfunction the pass between section and heavy ion LET values or proton energy because device sensitivity is widely different
System disobeys Weibull distributions.Normal single particle effect data give tacit consent to Follow Weibull Distribution, just may be used based on this
To carry out the crash rate evaluation work of next step.If disobeying Weibull distributions, it can not just be fitted in principle and estimate failure
Rate, in this case if fitting will miss crucial characteristic information by force.
3rd, irradiation bottom device proposed by the present invention obtains the evaluation method of electronic system single particle effect sensibility, is commenting
During influence of the system-level reinforcement technique of valency for crash rate, without the influence that is brought to system-level reinforcement technique with linear relation
It is equivalent to carry out crash rate, can realize the accurate estimation to electronic system crash rate index before and after reinforcing.
4th, irradiation bottom device proposed by the present invention obtains the evaluation method of electronic system single particle effect sensibility, is commenting
During influence of the system-level reinforcement technique of valency for crash rate, without understanding internal system construction and system-level radioresistance being taken to add
Gu arbitrary system can be used in the details of measure, there is stronger operability.
Description of the drawings
Fig. 1 shows by bottom device A, B, C, D ... the schematic diagram of exemplary electronic system formed；
Fig. 2 be single-particle sensitivity assessment between component failure criterion, unit failure criteria and thrashing criterion
Relation schematic diagram；
Electronic system single-particle is corresponded to when Fig. 3 is irradiates different bottom devices to malfunction between section and heavy ion LET values
Relational graph.
Specific embodiment
During the single particle effect sensibility of present invention evaluation electronic system, fully take into account electronic system and lost with bottom device
Imitate the different actual state of criterion, it is proposed that by irradiated electrons system midsole layer device one by one and carry out probability synthesis to evaluate
The method of entire electronic system single particle effect sensibility, preferred flow specifically include following steps：
1) analysis object is determined
Analysis object includes bottom device comprising all bottom devices and to be able to carry out the electronic system of normal function
Access in electronic system；
2) it determines electronic system working condition and lays mode
2.1) electronic system is in powered-up mode, and institute's pumping signal in need is both needed to access, and ensures that electronic system performs
Normal function；
2.2) the bottom device in electronic system is arranged in circuit board the same side, if electronic system includes polylith circuit
Plate, the then interconnection that should be spread all circuit boards out between same plane, circuit board preferentially use flexible cable；
3) electronic system failure criteria is determined
Thrashing criterion includes following three kinds：
1) electronic system output, electronic system are monitored while continuing input data vector or analog signal to electronic system
There are system data errors in judgement when output valve is not inconsistent with desired value；
2) when the instruction operation of erasing/reset/unloading/acknowledgement type is performed to Complex Electronic Systems Based, electronic system is examined
Whether being capable of normal response, it is impossible to generating system error is judged during normal response；
3) for the electronic system with self-checking function, monitoring whether can or fault cues letter normal by default output
Breath, if it could not, judgement generating system error.
4) the bottom device in irradiated electrons system one by one in radiation environment
4.1) initialization system is operated in non-reinforced pattern, i.e., runs non-reinforced software version simultaneously using non-reinforced backup machine
This；
4.2) the bottom device in irradiated electrons system one by one in heavy ion environment, loses according to the system that step 3) provides
The Failure count of criterion statistics electronic system is imitated, single-particle error section is calculated according to Failure count, every device is both needed to obtain
Take at least five groups of expression devices that there is corresponding close with heavy-ion linear energy transfer value to system single-particle error section contribution
The data point of system；
4.3) the bottom device in irradiated electrons system one by one in proton environments, electronics is counted according to thrashing criterion
The Failure count of system calculates single-particle error section according to Failure count, and every device obtains at least five groups of expressions and is somebody's turn to do
Device has system single-particle error section contribution with proton energy value the data point of correspondence；
4.4) Weibull songs are carried out one by one to the heavy ion irradiation data point of every device and proton irradiation data point respectively
Line is fitted, as follows：
Wherein σion,i(LET) for i-th bottom device of heavy ion irradiation the section of single-particle error occurs for electronic system when,
σsat,ion,i、L0,ion,i、Wion,iAnd Sion,iRespectively i-th bottom device of heavy ion irradiation when the error of electronic system single-particle cut
The Weibull matched curves in face correspond to saturation section, LET threshold values, scale parameter and form parameter.σproton,i(E) it is proton spoke
The section of single-particle error, σ occur for electronic system during according to i-th bottom devicesat,proton,i、E0,proton,i、Wproton,iWith
Sproton,iRespectively i-th bottom device of proton irradiation when electronic system single-particle error section Weibull matched curves pair
Answer saturation section, energy threshold, scale parameter and form parameter；
4.5) heavy ion LET spectrums and matter are determined according to selected spacecraft orbit parameter, solar activity situation, shielding parameter
Sub- power spectrum, the fitting parameter by the use of Weibull curves contribute system single-particle sensibility as every bottom device of characterization
Input parameter, take based on RPP (parallelepiped) model estimate software SPACE RADIATION andIt calculates
The corresponding in-orbit system failure rate of every bottom device, λiRepresent the in-orbit system failure rate of i-th bottom device, i.e. single device
Cause electronic system that the number of single-particle error occurs in the part unit interval.
4.6) the crash rate λ of single-particle error occurs in particular space radiation environment for electronic systemTotal=∑iλi。
5) validity of system-level radiation hardened measure is verified
5.1) initialization system is operated in reinforcement mode, i.e., runs reinforcing software version simultaneously using reinforcing backup machine；
5.2) step 4.2) -4.6 is repeated), the mistake of single-particle error occurs for evaluation work electronic system in reinforcement mode
Efficiency；
5.3) when electronic system crash rate is significantly lower than non-reinforced situation in the case of reinforcing, it is believed that used system
Grade radiation hardening measure is effective.
The present invention is further elaborated below in conjunction with the accompanying drawings.
Fig. 1 show the canonical system for including multiple devices, is named in the way of device is by A, B, C, D ....
Fig. 2 show the relationship between component failure criterion, unit failure criteria and thrashing criterion, it can be seen that
When system fails centainly and meanwhile have occurred component failure and unit failure, but component failure differ surely cause unit failure
Or thrashing.Such as to Mr. Yu's electronic system, the failure criteria of bottom device is the storage position generating state overturning in device；And
The failure criteria of unit grade is related to the performance that specific unit performs, error rate index such as signal processing platform, cannot be normal
Instruction that response platform system provides, data packet cannot upload on time, remote-control romote-sensing instruction is unable to normal response etc.；Whole system
Failure criteria is then more macroscopical, shows as system to the response time of instruction less than certain numerical value, the time of system down-transmitting data
Interval is less than certain numerical value etc..
When carrying out irradiation test, ensure that the bottom device in electronic system is arranged in circuit board the same side, such as Department of Electronics
All circuit boards should then be spread out the interconnection between same plane, circuit board comprising polylith circuit board and preferentially use flexible cord by system
Cable, radiating particle can be realized in this case irradiates each bottom device one by one.
Fig. 3 show under heavy ion environment irradiate the corresponding electronic system single-particle error section of bottom device A, B, C with
Relationship between heavy ion LET values, it can be seen that the threshold value and saturation section of three device correspondence system grade single event function interrupts
Face differs.If the computing system total cross section by the way of directly summing it up, curve obtained obviously significantly do not meet Weibull
The form of distribution will lead to not further calculate the crash rate on specific track.According in step 4) give flow, first
It is fitted by Weibull and the overturning rate based on RPP models is estimated the corresponding heavy ion of software calculating different components and drawn
It sends out crash rate in-orbit, and causes in-orbit crash rate according to the corresponding proton of same workflow management different components, spoke is calculated with this
According to the corresponding electronic system crash rate of single device.Finally, due to failure, which does not occur, for system is equal to all bottom devices not
Cause thrashing, the crash rate of electronic system can be calculated according to step 4.6).
Claims (6)
1. irradiate the evaluation method that bottom device obtains electronic system single particle effect sensibility, which is characterized in that including as follows
Step：
1) analysis object is determined
The analysis object comprising all bottom devices and to be able to carry out the electronic system of normal function, comprising bottom device
Part has accessed electronic system；
2) working condition of electronic system is determined
Electronic system is in powered-up mode, and institute's pumping signal in need is both needed to access, and ensures that electronic system performs normal function；
3) irradiation evaluation
3.1) operating mode of electronic system is set, the operating mode includes reinforcement mode and non-reinforced pattern；
3.2) the bottom device in irradiated electrons system one by one in heavy ion environment, Department of Electronics is counted according to thrashing criterion
The Failure count of system calculates single-particle error section according to Failure count, and every device is both needed to obtain at least five groups of expressions and is somebody's turn to do
Device has system single-particle error section contribution with heavy-ion linear energy transfer value the data point of correspondence；
3.3) the bottom device in irradiated electrons system one by one in proton environments, electronic system is counted according to thrashing criterion
Failure count, single-particle error section is calculated according to Failure count, every device obtains at least five groups of expression devices
There is the data point of correspondence to system single-particle error section contribution with proton energy value；
3.4) Weibull curve plans are carried out one by one to the heavy ion irradiation data point of every device and proton irradiation data point respectively
It closes, shown in fit curve equation such as formula (1) and formula (2)：
Wherein, σion,i(LET) for i-th bottom device of heavy ion irradiation the section of single-particle error occurs for electronic system when,
σsat,ion,i、L0,ion,i、Wion,iAnd Sion,iElectronic system single-particle goes out when respectively being i-th bottom device of heavy ion irradiation
Saturation section, LET threshold values, scale parameter and form parameter corresponding to the Weibull matched curves in wrong section；
Wherein, σproton,i(E) for i-th bottom device of proton irradiation the section of single-particle error occurs for electronic system when,
σsat,proton,i、E0,proton,i、Wproton,iAnd Sproton,iElectronic system list when respectively being i-th bottom device of proton irradiation
Saturation section, energy threshold, scale parameter and form parameter corresponding to the Weibull matched curves in particle error section；
3.5) heavy ion LET spectrums and proton energy are determined according to selected spacecraft orbit parameter, solar activity situation, shielding parameter
Spectrum；
By the fitting parameter σ of Weibull curvessat,ion,i、L0,ion,i、Wion,i、Sion,i、σsat,proton,i、E0,proton,i、Wproton,i
And Sproton,iThe input parameter contributed as every bottom device of characterization system single-particle sensibility；
According to heavy ion LET spectrums, the fitting parameter of proton spectrum and Weibull curves, calculate every bottom device it is corresponding
Rail system failure rate；
3.6) the crash rate λ of single-particle error occurs in particular space radiation environment for electronic systemTotal=∑iλi, wherein λiGeneration
In-orbit system failure rate corresponding to i-th bottom device of table.
2. irradiation bottom device according to claim 1 obtains the evaluation method of electronic system single particle effect sensibility,
It is characterized in that, it is further included after step 3)：
Step 4) verifies the validity of system-level radiation hardened measure
Compare the crash rate of single-particle error that electronic system is operated under non-reinforced pattern and reinforcement mode, in the case of reinforcing
When electronic system crash rate is significantly lower than non-reinforced situation, it is believed that used system-level radiation hardening measure is effective
's.
3. a kind of bottom device that irradiates according to claim 1 or 2 obtains commenting for electronic system single particle effect sensibility
Valency method, it is characterised in that：
Thrashing criterion in step 3.2) and step 3.3) includes following three kinds：
1) electronic system output, electronic system output are monitored while continuing input data vector or analog signal to electronic system
There are system data errors in judgement when value is not inconsistent with desired value；
2) when the instruction operation of erasing/reset/unloading/acknowledgement type is performed to Complex Electronic Systems Based, whether electronic system is examined
It being capable of normal response, it is impossible to generating system error is judged during normal response；.
3) it for the electronic system with self-checking function, monitors whether that normal or fault cues information can be exported by default, such as
Fruit cannot, judgement generating system error.
4. a kind of evaluation side for irradiating bottom device and obtaining electronic system single particle effect sensibility according to claim 1
Method, it is characterised in that：
Bottom device in step 3.2) and step 3.3) in electronic system is arranged in circuit board the same side, if electronic system
Comprising polylith circuit board, then all circuit boards are spread out in same plane.
5. a kind of evaluation side for irradiating bottom device and obtaining electronic system single particle effect sensibility according to claim 4
Method, it is characterised in that：
It is interconnected between the polylith circuit board that electronic system is included in step 3.2) and step 3.3) using flexible cable.
6. a kind of irradiation bottom device according to any one of claims 1 to 5 obtains electronic system single particle effect sensibility
Evaluation method, it is characterised in that：
According to the fitting parameter of heavy ion LET spectrums, proton spectrum and Weibull curves in step 3.5), every bottom device is calculated
During the corresponding system failure rate of part, voluntarily programming can be selected or the mode of software is estimated using commercialization, optional commercialization is estimated soft
Part includes SPACE RADIATION or CREME.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111008514A (en) * | 2019-10-28 | 2020-04-14 | 北京时代民芯科技有限公司 | Simulation test method for anti-radiation reinforced module-level circuit |
| CN114460440A (en) * | 2022-01-26 | 2022-05-10 | 中国科学院近代物理研究所 | Integrated circuit single event effect positioning system |
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| CN105117576A (en) * | 2015-07-13 | 2015-12-02 | 上海卫星工程研究所 | Spacecraft system-level single event upset effect analysis method based on fault propagation |
| CN105718713A (en) * | 2015-08-31 | 2016-06-29 | 北京圣涛平试验工程技术研究院有限责任公司 | Reliability analysis method of space radiation environment |
| CN105893664A (en) * | 2016-03-30 | 2016-08-24 | 北京空间飞行器总体设计部 | System level single event effect influence representation parameter and evaluation method |
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| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN105117576A (en) * | 2015-07-13 | 2015-12-02 | 上海卫星工程研究所 | Spacecraft system-level single event upset effect analysis method based on fault propagation |
| CN105718713A (en) * | 2015-08-31 | 2016-06-29 | 北京圣涛平试验工程技术研究院有限责任公司 | Reliability analysis method of space radiation environment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111008514A (en) * | 2019-10-28 | 2020-04-14 | 北京时代民芯科技有限公司 | Simulation test method for anti-radiation reinforced module-level circuit |
| CN114460440A (en) * | 2022-01-26 | 2022-05-10 | 中国科学院近代物理研究所 | Integrated circuit single event effect positioning system |
| CN114460440B (en) * | 2022-01-26 | 2023-09-12 | 中国科学院近代物理研究所 | Integrated circuit single event effect positioning system |
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| CN108181524B (en) | 2020-10-09 |
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