CN108169835A - The method for manufacturing wire grating polaroid - Google Patents

The method for manufacturing wire grating polaroid Download PDF

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Publication number
CN108169835A
CN108169835A CN201711462353.3A CN201711462353A CN108169835A CN 108169835 A CN108169835 A CN 108169835A CN 201711462353 A CN201711462353 A CN 201711462353A CN 108169835 A CN108169835 A CN 108169835A
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CN
China
Prior art keywords
layer
photoresist
pattern
bar shaped
inorganic
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Pending
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CN201711462353.3A
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Chinese (zh)
Inventor
侯俊
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201711462353.3A priority Critical patent/CN108169835A/en
Publication of CN108169835A publication Critical patent/CN108169835A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means

Abstract

A kind of method for manufacturing wire grating polaroid is provided.This method includes：Conductive layer, the first photoresist layer, inorganic layer and the second photoresist layer are sequentially formed in substrate；Coining handles to form the first photoresist pattern；Form inorganic layer pattern；Form the second photoresist pattern；Form metal layer；And multiple bar shaped inorganic layers and multiple bar shapeds the second photoresist film layer are removed, so as to obtain wire grating polaroid, wherein, the material that inorganic layer is different from the first photoresist layer and the second photoresist layer by removal condition is formed.According to an embodiment of the invention, due to wiregrating width not by impression block influenced thus to reduce to the depth of impression block than requirement.

Description

The method for manufacturing wire grating polaroid
Technical field
The present invention relates to wire grating technical fields, more particularly, are related to a kind of side for manufacturing wire grating polaroid Method.
Background technology
Sub-wavelength metal wiregrating polaroid can penetrate incident light of the direction of an electric field perpendicular to wiregrating direction, and by electric field side To the light reflection for being parallel to wiregrating direction, based on such operation principle, can be incited somebody to action by way of increasing antireflection film etc. anti- Light re-using is penetrated, wire grating polaroid is far longer than traditional polaroid through the ability of incident light, and transmitance is reachable More than 90%, and contrast also has 10000:1 height.In addition, since wire grating polaroid can be in high temperature or high humidity environment It is middle to realize remarkable durability, so wire grating polaroid waits reliabilities to require harsh field with incomparable outdoors Advantage.
In general, the polarized light property of wire grating polaroid is by wire grid material and its structures shape, the structural parameters of wiregrating Mainly include wiregrating width (linewidth), wiregrating depth (depth) and wiregrating period (aspectratio) etc..When wiregrating week Phase is sufficiently small, and when metal strip height is enough, and wiregrating can reflect almost all and the electric-field vector component of wiregrating parallel vibrating Light, and penetrate the light almost all of the electric-field vector component perpendicular to wiregrating.Therefore, sufficiently small wiregrating week how is obtained Phase and suitable depth-to-width ratio become the key for preparing wire grating.
As shown in Figures 1 to 6, the technique of conventionally manufactured wire grating polaroid includes the following steps：
As shown in Figure 1, metal layer 2, photoresist layer 3 are sequentially formed on the base 1；As shown in Fig. 2, impression block 4 is provided, profit Photoresist layer 3 is imprinted with the impression block 4, the pattern on the impression block 4 is transferred in photoresist layer 3；Such as Fig. 3 institutes Show, the impression block 4 (that is, demoulding) is removed, so as to form photoresist pattern 31；As shown in figure 4,31 bottoms of removal photoresist pattern are residual The photoresist stayed；As shown in figure 5, being mask with photoresist pattern 31, metal layer 2 is etched, so as to be formed by spaced The wire grating 21 that a plurality of metal wire is formed, wire grating 21 form wire grating polaroid with substrate 1.
However, above-mentioned manufacturing method is there are problems, for example, the depth of photoresist pattern 31 is substantially by 4 shadow of impression block It rings, therefore to the depth of impression block 4 than more demanding.
Invention content
Exemplary embodiment of the present invention is to provide a kind of method for manufacturing wire grating polaroid, to overcome existing skill In art is required to the depth of impression block ratio the problem of high.
The present invention provides a kind of method for manufacturing wire grating polaroid, including：Be sequentially formed in substrate conductive layer, First photoresist layer, inorganic layer and the second photoresist layer；Impression block is provided, the second photoresist layer is carried out at coining using impression block Reason, to form the first photoresist pattern, the first photoresist pattern includes spaced multiple bar shaped the first photoresist film layers and is located at Multiple first interval regions between multiple the first photoresist of bar shaped film layers；Remove being exposed by multiple first interval regions for inorganic layer Part, to form inorganic layer pattern, inorganic layer pattern includes being arranged at intervals and corresponding with multiple the first photoresist of bar shaped film layers Multiple bar shaped inorganic layers and between multiple bar shaped inorganic layers and corresponding with multiple first interval regions multiple second Interval region；The part exposed by multiple first interval regions and multiple second interval regions of the first photoresist layer is removed, with shape Into the second photoresist pattern, the second photoresist pattern includes being arranged at intervals and multiple the second light of bar shaped corresponding with multiple bar shaped inorganic layers Hinder film layer and multiple third interval regions between multiple the second photoresist of bar shaped film layers；It is being led using electrochemical deposition method Metal layer is formed on the part exposed by multiple second interval regions and multiple third interval regions of electric layer；And removal is multiple Bar shaped inorganic layer and multiple bar shapeds the second photoresist film layer, so as to obtain wire grating polaroid, wherein, inorganic layer is by removal condition It is formed different from the material of the first photoresist layer and the second photoresist layer.
Optionally, inorganic layer can be by SiO2Or Si3N4It is formed.
Optionally, the thickness of the first photoresist layer can be more than the thickness of the second photoresist layer.
Optionally, the method can also be included in be formed after the first photoresist pattern and be formed before inorganic layer pattern, Remaining second photoresist layer in impression block and the multiple first interval region of removal is removed from the second photoresist layer.
Optionally, in inorganic layer pattern is formed, inorganic layer can be etched using the first photoresist pattern as mask.
Optionally, in the second photoresist pattern is formed, the first photoresist layer can be lost using inorganic layer pattern as mask It carves, while etches away the multiple the first photoresist of bar shaped film layer.
Optionally, it is formed in metal layer using electrochemical deposition method, it can be using conductive layer as cathode, with reduction potential Higher than cathode metal material as anode, form gold in the deposited on portions metal material of conductive layer in the electrolytic solution Belong to layer.
Optionally, conductive layer can be formed by transparent conductive oxide or graphene.
Optionally, metal layer can be formed by Au or Ag.
Optionally, substrate can be formed by glass, polyimides or polyethylene terephthalate.
The method of manufacture wire grating polaroid according to an exemplary embodiment of the present invention, since wiregrating width is not imprinted Template influence thus reduce to the depth of impression block than requirement, this improves manufacture efficiencies.
It will illustrate the other aspect and/or advantage of present general inventive concept in part in following description, also one Divide and will be apparent by description or the implementation of present general inventive concept can be passed through and learnt.
Description of the drawings
Fig. 1 to Fig. 6 shows the schematic diagram of the method for manufacture wire grating polaroid in the prior art；
Fig. 7 shows the flow chart of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention；
Fig. 8 to Figure 14 shows the signal of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention Figure；
Figure 15 shows that the electricity of the metal layer in manufacture wire grating polaroid according to an exemplary embodiment of the present invention sinks The schematic diagram of product device；
Figure 16 shows the deposition of the metal layer in manufacture wire grating polaroid according to an exemplary embodiment of the present invention The schematic diagram of process.
Specific embodiment
The embodiment of the present invention is reference will now be made in detail, the example of the embodiment is shown in the drawings, wherein, identical mark Number identical component is referred to always.It will illustrate the embodiment by referring to accompanying drawing below, to explain the present invention.
Fig. 7 shows the flow chart of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention.Fig. 8 The schematic diagram of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention is shown to Figure 14.Figure 15 is shown The schematic diagram of the electric deposition device of metal layer in manufacture wire grating polaroid according to an exemplary embodiment of the present invention.Figure 16 show the signal of the deposition process of the metal layer in manufacture wire grating polaroid according to an exemplary embodiment of the present invention Figure.
The method of the manufacture wire grating polaroid of exemplary embodiment of the present includes：It is sequentially formed and leads in substrate Electric layer, the first photoresist layer, inorganic layer and the second photoresist layer (step S1)；Coining handles (step S2)；Form inorganic layer pattern (step Rapid S3)；Form the second photoresist pattern (step S4)；Form metal layer (step S5)；Remove multiple bar shaped inorganic layers and multiple Shape the second photoresist film layer (step S6).
First, with reference to Fig. 7 and Fig. 8, in step sl, be sequentially formed from bottom to up in substrate 100 conductive layer 200, First photoresist layer 300,400 and second photoresist layer 500 of inorganic layer.
Specifically, first substrate 100 can be pre-processed, it is flat to be provided for the conductive layer 200 formed on the surface thereof Smooth surface.Substrate 100 can be formed by glass, polyimides (PI) or polyethylene terephthalate (PET) etc., so And the present invention is not limited thereto.
Conductive layer 200 is formed in substrate 100.Conductive layer 200 serves as the moon subsequently to form metal layer using electrodeposition process Pole, conductive layer 200 can be formed by transparent conductive oxide or graphene, it is preferable that can be formed by ITO.In addition, conductive layer 200 are not particularly limited as the cathode in electrodeposition process thus its thickness.
The first photoresist layer 300,400 and second photoresist layer 500 of inorganic layer are formed on conductive layer 200.It can be according to first Photoresist layer 300,400 and second photoresist layer 500 of inorganic layer sequence the first photoresist layer 300, nothing are sequentially formed on conductive layer 200 400 and second photoresist layer 500 of machine layer.
First photoresist layer 300 and the second photoresist layer 500 can be by identical methods (for example, rubbing method) and by identical Material is formed.In an exemplary embodiment of the present invention, the first photoresist layer 300 is used to determine to form the wiregrating depth of wire grating Effect, therefore can determine the thickness of the first photoresist layer 300 as needed, such as the thickness of the first photoresist layer 300 can be with For but be not limited to about 200nm-300nm；And the second photoresist layer 500 is used to carry impression block and determine to be formed the line of wire grating The effect of grid width, therefore the thickness of the second photoresist layer 500 can be very thin, so as to reduce to the depth of impression block than than It asks, such as the thickness of the second photoresist layer 500 is but is not limited to about 100nm-200nm.In an exemplary embodiment of the present invention, it is excellent Selection of land, the second photoresist layer 500 can be thinner than the first photoresist layer 300.By the way that the thickness of the second photoresist layer 500 is set to obtain ratio first Photoresist layer 300 is thin, so as to reduce the depth of the impression block subsequently used ratio, therefore reduces and manufacture impression block is wanted It asks.
Can inorganic layer 400 be formed on the first photoresist layer 300 by sedimentation.Inorganic layer 400 by removal condition not The material for being same as the first photoresist layer 300 and the second photoresist layer 500 is formed.For example, inorganic layer 400 can be by SiO2Or Si3N4Etc. shapes Into.The thickness of inorganic layer 400 can be 50nm-100nm, however the present invention is not limited thereto.
Then, with reference to Fig. 7 and Fig. 9, in step s 2, impression block 600 is provided, using impression block 600 to the second light Resistance layer 500 carries out coining processing, and to obtain the first photoresist pattern 510, the first photoresist pattern 510 includes spaced multiple The first photoresist of shape film layer 511 and multiple first interval regions between the multiple the first photoresist of bar shaped film layer 511 512。
Impression block (for example, nano-imprint stamp) 600 can be placed on the second photoresist layer 500, may be used ultraviolet Solidified imprinting method carries out the second photoresist layer 500 coining processing to form the first photoresist pattern 510.Here, due to the second photoresist Layer 500 can be relatively thin, thus reduce to the depth of impression block 600 than requirement.
In addition, in an embodiment of the present invention, the method can also be included in after coining processing (step S2), from the Impression block 600 namely demoulding processing (as shown in Figure 10) are removed in two photoresist layers 500, and remove after demolding (for example, Etching) remaining second photoresist layer 500 (as shown in figure 11) in the first interval region 512, it is arranged on second to expose The corresponding portion of the inorganic layer 400 of 500 lower section of photoresist layer.
Then, with reference to Fig. 7 and Figure 12, in step s3, removal inorganic layer 400 by the multiple first interval region The parts of 512 exposures, to form inorganic layer pattern 410, inorganic layer pattern 410 include being arranged at intervals and with the multiple bar shaped the One photoresist film layer, 511 corresponding multiple bar shaped inorganic layers 411 and between the multiple bar shaped inorganic layer 411 and with institute State corresponding multiple second interval regions 412 of multiple first interval regions 512.
Inorganic layer 400 can be etched for mask with the first photoresist pattern 510, so as to form inorganic layer pattern 410. As noted previously, as inorganic layer is by being different from removal (for example, etching) condition of the first photoresist layer 300 and the second photoresist layer 500 Material formed, therefore the first photoresist pattern 510 can be etched inorganic layer 400 as mask to form inorganic layer pattern 410。
Next, with reference to Fig. 7 and Figure 13, in step s 4, the first photoresist layer 300 of removal is spaced by the multiple first Region 512 and the part of the multiple second interval region 412 exposure, to form the second photoresist pattern 310, the second photoresist pattern 310 include being arranged at intervals and multiple the second photoresist of bar shaped film layers 311 corresponding with the multiple bar shaped inorganic layer 411 and being located at Multiple third interval regions 312 between the multiple the second photoresist of bar shaped film layer 311.
The first photoresist layer 300 can be etched for mask with inorganic layer pattern 410, so as to form the second photoresist pattern 310.Further, since thickness (itself and the second photoresist layer 500 of the first photoresist of multiple bar shapeds film layer 511 of the first photoresist pattern 510 Thickness it is identical) less than the thickness of the first photoresist layer 300, it is therefore described more while being etched to the first photoresist layer 300 A the first photoresist of bar shaped film layer 511 can also be removed.In an exemplary embodiment of the present invention, in 300 He of the first photoresist layer Inorganic layer is set between second photoresist layer 500, carrying out processing to inorganic layer forms inorganic layer pattern, and inorganic layer pattern can fill When the mask of the first photoresist layer 300 of etching is without extraly adding mask, and inorganic in subsequent processing step Layer pattern also is able to play a protective role to the second photoresist pattern of its lower floor.
Then, with reference to Fig. 7, in step s 5, using electrochemical deposition method between conductive layer 200 is by the multiple second Metal layer 700 is formed on septal area domain 412 and the part of the multiple third interval region 312 exposure.
In an embodiment of the present invention, reduction potential can be selected to be higher than the metal of cathode using conductive layer 200 as cathode Material is as anode, for example, by ITO for for cathode, In element reduction current potentials are -0.3382V, and Sn element reduction current potentials are - Therefore 0.1364V, can select the materials such as Au (1.42V) or Ag (0.7996V) as anode.
Specifically, as shown in Figure 15 and Figure 16, can be using ITO as cathode 10, Au plates are anode 20, including AuCl3, table In the electrolyte of face activating agent, leveling agent etc. after applying direct current, anode 20 occur oxidation reaction, Au atoms lose electronics into For Au3+And it is dissolved in electrolyte, Au3+Electronics is obtained in cathode surface, and reduction reaction occurs as Au atomic depositions in conductive layer 200 surface, forms nucleus and growth is filled in the second interval region 412 and third interval region 312.
Finally, with reference to Fig. 7 and Figure 14, in step s 6, the multiple bar shaped inorganic layer 411 and the multiple bar shaped are removed Second photoresist film layer 311, so as to obtain wire grating polaroid.Specifically, it after metal is grown, is shelled from substrate 100 From multiple bar shaped inorganic layers 411 and the second photoresist of multiple bar shapeds film layer 311, so as to obtain wire grating polaroid.
The wiregrating width of obtained wire grating polaroid constructed in accordance can be in 50nm-100nm, wiregrating depth It can be between 70nm-200nm in 100nm-300nm, wiregrating period.Therefore, it can manufacture according to the method for the present invention The wire grating polaroid of the high-aspect-ratio gone out.
According to the method for the present invention, segmentation etch prepares the photoresist period of high-aspect-ratio, then using electrochemical deposition method Metal layer is grown in photoresist periodic intervals, goes removing photoresistance layer that can obtain wire grating after reaching a certain height.
In conclusion the wiregrating width of wire grating and wiregrating are directly determined by impression block with of the prior art Depth is compared, in the present invention, wiregrating width that wire grating is determined by impression block and with inorganic layer (for example, inorganic Layer pattern) it is indulged as mask by etching the wiregrating depth to determine wire grating, wiregrating depth independent of impression block Deep ratio so as to reduce the requirement to impression block, and can manufacture the wire grating polaroid of wiregrating depth bigger.
Although having show and described some exemplary embodiments of the present invention, it will be understood by those skilled in the art that It, can be to these in the case where not departing from the principle and spirit of the invention defined by the claims and their equivalents Embodiment is modified.

Claims (10)

  1. A kind of 1. method for manufacturing wire grating polaroid, which is characterized in that including：
    Conductive layer, the first photoresist layer, inorganic layer and the second photoresist layer are sequentially formed in substrate；
    Impression block is provided, coining processing is carried out to the second photoresist layer using impression block, to form the first photoresist pattern, first Photoresist pattern include spaced multiple bar shaped the first photoresist film layers and positioned at the multiple the first photoresist of bar shaped film layer it Between multiple first interval regions；
    The part exposed by the multiple first interval region of inorganic layer is removed, to form inorganic layer pattern, inorganic layer pattern Including interval setting and multiple bar shaped inorganic layers corresponding with the multiple the first photoresist of bar shaped film layer and positioned at the multiple Between bar shaped inorganic layer and multiple second interval regions corresponding with the multiple first interval region；
    The part exposed by the multiple first interval region and the multiple second interval region of the first photoresist layer is removed, with The second photoresist pattern is formed, the second photoresist pattern includes being arranged at intervals and multiple bar shapeds corresponding with the multiple bar shaped inorganic layer Second photoresist film layer and multiple third interval regions between the multiple the second photoresist of bar shaped film layer；
    It is sudden and violent by the multiple second interval region and the multiple third interval region in conductive layer using electrochemical deposition method Metal layer is formed on the part of dew；And
    The multiple bar shaped inorganic layer and the multiple bar shaped the second photoresist film layer are removed, so as to obtain wire grating polaroid,
    Wherein, inorganic layer is formed by material of the removal condition different from the first photoresist layer and the second photoresist layer.
  2. 2. according to the method described in claim 1, it is characterized in that, inorganic layer is by SiO2Or Si3N4It is formed.
  3. 3. according to the method described in claim 1, it is characterized in that, the thickness of the first photoresist layer is more than the thickness of the second photoresist layer Degree.
  4. 4. according to the method described in claim 1, it is characterized in that, the method is additionally included in be formed after the first photoresist pattern And formed before inorganic layer pattern, it is removed from the second photoresist layer in impression block and the multiple first interval region of removal Remaining second photoresist layer.
  5. 5. according to the method described in claim 1, it is characterized in that, in inorganic layer pattern is formed, using the first photoresist pattern as Mask is etched inorganic layer.
  6. 6. according to the method described in claim 1, it is characterized in that, in the second photoresist pattern is formed, using inorganic layer pattern as Mask is etched the first photoresist layer, while etches away the multiple the first photoresist of bar shaped film layer.
  7. 7. according to the method described in claim 1, it is characterized in that, using electrochemical deposition method formed metal layer the step of In, using conductive layer as cathode, the metal material using reduction potential higher than cathode is as anode, in the electrolytic solution in conductive layer Metal layer is formed on the part.
  8. 8. the method according to claim 1 or 6, which is characterized in that conductive layer is by transparent conductive oxide or graphene shape Into.
  9. 9. the method according to the description of claim 7 is characterized in that metal layer is formed by Au or Ag.
  10. 10. according to the method described in claim 1, it is characterized in that, substrate is by glass, polyimides or poly terephthalic acid second Diol ester is formed.
CN201711462353.3A 2017-12-28 2017-12-28 The method for manufacturing wire grating polaroid Pending CN108169835A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1985195A (en) * 2004-05-21 2007-06-20 皮雷利&C.有限公司 Manufacture of grating structures having high aspelt ratio
US20130270223A1 (en) * 2012-04-17 2013-10-17 Samsung Display Co., Ltd. Photoresist composition, method of manufacturing a polarizer and method of manufacturing a display substrate using the same
CN104733569A (en) * 2013-12-19 2015-06-24 北京北方微电子基地设备工艺研究中心有限责任公司 Manufacturing method of nano-sized patterned substrate
CN107203017A (en) * 2017-07-06 2017-09-26 深圳市华星光电技术有限公司 The preparation method of nanometer wiregrating polaroid
CN107479121A (en) * 2017-08-25 2017-12-15 深圳市华星光电技术有限公司 The preparation method and nano metal grating of nano metal grating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1985195A (en) * 2004-05-21 2007-06-20 皮雷利&C.有限公司 Manufacture of grating structures having high aspelt ratio
US20130270223A1 (en) * 2012-04-17 2013-10-17 Samsung Display Co., Ltd. Photoresist composition, method of manufacturing a polarizer and method of manufacturing a display substrate using the same
CN104733569A (en) * 2013-12-19 2015-06-24 北京北方微电子基地设备工艺研究中心有限责任公司 Manufacturing method of nano-sized patterned substrate
CN107203017A (en) * 2017-07-06 2017-09-26 深圳市华星光电技术有限公司 The preparation method of nanometer wiregrating polaroid
CN107479121A (en) * 2017-08-25 2017-12-15 深圳市华星光电技术有限公司 The preparation method and nano metal grating of nano metal grating

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