CN108254823A - The method for manufacturing wire grating polaroid - Google Patents
The method for manufacturing wire grating polaroid Download PDFInfo
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- CN108254823A CN108254823A CN201711463609.2A CN201711463609A CN108254823A CN 108254823 A CN108254823 A CN 108254823A CN 201711463609 A CN201711463609 A CN 201711463609A CN 108254823 A CN108254823 A CN 108254823A
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- photoresist
- layer
- pattern
- inorganic layer
- bar shaped
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
Abstract
A kind of method for manufacturing wire grating polaroid is provided.This method includes：Metal layer, the first photoresist layer, inorganic layer and the second photoresist layer are sequentially formed in substrate；Coining handles to form the first photoresist pattern；Form inorganic layer pattern；Form the second photoresist pattern；Form wire grating；And inorganic layer pattern and the second photoresist pattern are removed, so as to obtain wire grating polaroid, wherein, the material that inorganic layer is different from the first photoresist layer and the second photoresist layer by removal condition is formed.Can be effectively prevented according to the method for the present invention photoresist be etched and caused by cave in risk.
Description
Technical field
The present invention relates to wire grating technical fields, more particularly, are related to a kind of side for manufacturing wire grating polaroid
Method.
Background technology
Sub-wavelength metal wiregrating polaroid can penetrate incident light of the direction of an electric field perpendicular to wiregrating direction, and by electric field side
To the light reflection for being parallel to wiregrating direction, based on such operation principle, can be incited somebody to action by way of increasing antireflection film etc. anti-
Light re-using is penetrated, wire grating polaroid is far longer than traditional polaroid through the ability of incident light, and transmitance is reachable
More than 90%, and contrast also has 10000:1 height.In addition, since wire grating polaroid can be in high temperature or high humidity environment
It is middle to realize remarkable durability, so wire grating polaroid waits reliabilities to require harsh field with incomparable outdoors
Advantage.
In general, the polarized light property of wire grating polaroid is by wire grid material and its structures shape, the structural parameters of wiregrating
Mainly include wiregrating width (linewidth), wiregrating depth (depth) and wiregrating period (aspect ratio) etc..Work as wiregrating
Period is sufficiently small, and when metal strip height is enough, and wiregrating can reflect the electric-field vector component of almost all and wiregrating parallel vibrating
Light, and penetrate the light almost all of electric-field vector component perpendicular to wiregrating.Therefore, sufficiently small wiregrating how is obtained
Period and suitable depth-to-width ratio become the key for preparing wire grating.
As shown in Figures 1 to 6, the technique of conventionally manufactured wire grating polaroid includes the following steps：As shown in Figure 1,
Metal layer 2, photoresist layer 3 are sequentially formed in substrate 1；As shown in Fig. 2, impression block 4 is provided, using the impression block 4 to photoresist
Layer 3 is imprinted, and the pattern on the impression block 4 is transferred in photoresist layer 3；As shown in figure 3, remove the impression block 4
(that is, demoulding), so as to form photoresist pattern 31；As shown in figure 4, the 31 remaining photoresist in bottom of removal photoresist pattern；Such as Fig. 5 institutes
Show, be mask with photoresist pattern 31, metal layer 2 is etched, so as to form what is be made of spaced a plurality of metal wire
Wire grating 21, wire grating 21 form wire grating polaroid with substrate 1.
Invention content
Exemplary embodiment of the present invention is to provide a kind of method for manufacturing wire grating polaroid, to overcome existing skill
Photoresist layer there is technical issues that cave in art.
The present invention provides a kind of method for manufacturing wire grating polaroid, including：Be sequentially formed in substrate metal layer,
First photoresist layer, inorganic layer and the second photoresist layer；Impression block is provided, the second photoresist layer is carried out at coining using impression block
Reason, to form the first photoresist pattern, the first photoresist pattern includes spaced multiple bar shaped the first photoresist film layers and is located at
Multiple first interval regions between the multiple the first photoresist of bar shaped film layer；Using the first photoresist pattern as mask to inorganic layer into
Row etching, to form inorganic layer pattern corresponding with the first photoresist pattern；Using inorganic layer pattern as mask to the first photoresist layer into
Row etching, to form the second photoresist pattern corresponding with inorganic layer pattern；Using inorganic layer pattern and the second photoresist pattern as mask
Metal layer is etched, to form the wire grating being made of spaced a plurality of metal wire；And removal inorganic layer figure
Case and the second photoresist pattern, so as to obtain wire grating polaroid, wherein, inorganic layer is different from the first photoresist layer by removal condition
It is formed with the material of the second photoresist layer.
Optionally, inorganic layer can be by SiO2Or Si3N4It is formed.
Optionally, the second photoresist layer can have the thickness of the thickness less than or equal to the first photoresist layer.
Optionally, metal layer can be formed by Al.
Optionally, the method can also be included in be formed after the first photoresist pattern and formed inorganic layer pattern it
Before, remaining second photoresist layer in impression block and the multiple first interval region of removal is removed from the second photoresist layer.
Optionally, in the second photoresist pattern is formed, the multiple the first photoresist of bar shaped film layer can be etched away.
Optionally, in wire grating is formed, Cl can be used2And/or BCl3Metal layer is etched.
Optionally, inorganic layer pattern can include be arranged at intervals and it is corresponding more with the multiple the first photoresist of bar shaped film layer
A bar shaped inorganic layer and between the multiple bar shaped inorganic layer and corresponding more with the multiple first interval region
A second interval region, the second photoresist pattern can include be arranged at intervals and it is multiple corresponding with the multiple bar shaped inorganic layer
Shape the second photoresist film layer and multiple third interval regions between the multiple the second photoresist of bar shaped film layer.
Optionally, in inorganic layer pattern and the second photoresist pattern is removed, institute can be removed from a plurality of metal wire
State multiple bar shaped inorganic layers and the multiple bar shaped the second photoresist film layer.
Optionally, substrate can be formed by glass, polyimides or polyethylene terephthalate.
The method of manufacture wire grating polaroid according to an exemplary embodiment of the present invention, due to when etching metal layer the
Two photoresist patterns are protected by inorganic layer pattern, thus can be effectively prevented photoresist be etched and caused by cave in risk.
It will illustrate the other aspect and/or advantage of present general inventive concept in part in following description, also one
Divide and will be apparent by description or the implementation of present general inventive concept can be passed through and learnt.
Description of the drawings
Fig. 1 to Fig. 6 shows the schematic diagram of the method for manufacture wire grating polaroid in the prior art；
Fig. 7 shows the flow chart of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention；
Fig. 8 to Figure 15 shows the signal of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention
Figure.
Specific embodiment
The embodiment of the present invention is reference will now be made in detail, the example of the embodiment is shown in the drawings, wherein, identical mark
Number identical component is referred to always.It will illustrate the embodiment by referring to accompanying drawing below, to explain the present invention.
Fig. 7 shows the flow chart of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention.Fig. 8
The schematic diagram of the method for manufacture wire grating polaroid according to an exemplary embodiment of the present invention is shown to Figure 15.
In the prior art in the method for manufacture wire grating, after completing to imprint photoresist layer, due to photoresist layer
There is risk of caving in, therefore its depth-to-width ratio can not accomplish very greatly in self-characteristic；And in the removal remaining light of photoresist pattern bottom
Resistance layer is come after expose metal layer, when etching metal layer using dry ecthing method, after plasma is accelerated, and high-energy particle bombardment base
Bottom surface can also remove the part not by photoresist layer protection；Further, since ion and the bombardment of free radical whole face, can make light
Resistance layer reacts with it to a certain extent, causes in dry etch process, and the thickness of photoresist layer constantly reduces, and treats that photoresist layer is complete
During removal, metal layer is unprotected, influences final etch effect, and grating depth is also not as expected.
Based on this, the present invention provides a kind of method for manufacturing wire grating polaroid.This method includes：The sequence in substrate
Ground forms metal layer, the first photoresist layer, inorganic layer and the second photoresist layer (step S1)；Form the first photoresist pattern (step S2)；
Form inorganic layer pattern (step S3)；Form the second photoresist pattern (step S4)；Form wire grating (step S5)；It removes inorganic
Layer pattern and the second photoresist pattern (step S6).
First, with reference to Fig. 7 and Fig. 8, in step sl, be sequentially formed from bottom to up in substrate 100 metal layer 200,
First photoresist layer 300,400 and second photoresist layer 500 of inorganic layer.
Specifically, first substrate 100 can be pre-processed, it is flat to be provided for the metal layer 200 formed on the surface thereof
Smooth surface.Substrate 100 can be formed by glass, polyimides (PI) or polyethylene terephthalate (PET) etc., so
And the present invention is not limited thereto.
Metal layer 200 is formed in substrate 100.Metal layer 200 can be formed by Al, however, the present invention is not limited thereto.Gold
Belonging to the thickness of layer 200 can be arranged as required to and be not particularly limited.
The first photoresist layer 300,400 and second photoresist layer 500 of inorganic layer are formed on metal layer 200.It can be according to first
Photoresist layer 300,400 and second photoresist layer 500 of inorganic layer sequence the first photoresist layer 300, nothing are sequentially formed on metal layer 200
400 and second photoresist layer 500 of machine layer.
First photoresist layer 300 and the second photoresist layer 500 can be by identical methods (for example, rubbing method) and by identical
Material is formed.In an exemplary embodiment of the present invention, due to being set between the first photoresist layer 300 and the second photoresist layer 500
Inorganic layer 400, when etching metal layer, inorganic layer 400 plays a protective role, therefore first to the second photoresist layer 500 below
300 and second photoresist layer 500 of photoresist layer will not impact the formation of the depth-to-width ratio of metal grating, therefore the first photoresist layer
300 and second the thickness of photoresist layer 500 can be very thin, for example, the thickness of the first photoresist layer 300 and the second photoresist layer 500 can be with
For 50nm-100nm.In addition, the thickness of the thickness of the first photoresist layer 300 and the second photoresist layer 500 can be identical or different, example
Such as, the thickness of the first photoresist layer 300 can be more than the thickness of the second photoresist layer 500.
Can inorganic layer 400 be formed on the first photoresist layer 300 by sedimentation.Inorganic layer 400 by removal condition not
The material for being same as the first photoresist layer 300 and the second photoresist layer 500 is formed.For example, inorganic layer 400 can be by SiO2Or Si3N4Etc. shapes
Into.The thickness of inorganic layer 400 can be 50nm-100nm, however, the present invention is not limited thereto.
Then, with reference to Fig. 7 and Fig. 9, in step s 2, impression block 600 is provided, using impression block 600 to the second light
Resistance layer 500 carries out coining processing, and to form the first photoresist pattern 510, the first photoresist pattern 510 includes spaced multiple
The first photoresist of shape film layer 511 and multiple first interval regions between the multiple the first photoresist of bar shaped film layer 511
512。
Impression block (for example, nano-imprint stamp) 600 can be placed on the second photoresist layer 500, may be used ultraviolet
Solidified imprinting method carries out the second photoresist layer 500 coining processing to form the first photoresist pattern 510.Here, due to the second photoresist
Layer 500 can be relatively thin, thus reduce to the depth of impression block 600 than requirement.
In addition, in an embodiment of the present invention, the method can also be included in after coining processing (step S2), from the
Impression block 600 namely demoulding processing (as shown in Figure 10) are removed in two photoresist layers 500, and remove after demolding (for example,
Etching) remaining second photoresist layer 500 (as shown in figure 11) in the first interval region 512, it is arranged on second to expose
The corresponding portion of the inorganic layer 400 of 500 lower section of photoresist layer.
Then, with reference to Fig. 7 and Figure 12, in step s3, inorganic layer is etched for mask with the first photoresist pattern 510
To remove the part exposed by the multiple first interval region 512 of inorganic layer 400, so as to be formed and the first photoresist pattern
510 corresponding inorganic layer patterns 410.Inorganic layer pattern 410 can include be arranged at intervals and with the multiple the first photoresist of bar shaped
The corresponding multiple bar shaped inorganic layers 411 of film layer 511 and between the multiple bar shaped inorganic layer 411 and with it is the multiple
First interval region, 512 corresponding multiple second interval regions 412.
As noted previously, as inorganic layer is by being different from the removal of the first photoresist layer 300 and the second photoresist layer 500 (for example, erosion
Carve) material of condition formed, therefore the first photoresist pattern 510 can be etched inorganic layer 400 as mask to form nothing
Machine layer pattern 410.
It is mask to the first photoresist layer 300 with inorganic layer pattern 410 in step s 4 next, with reference to Fig. 7 and Figure 13
It is etched with the first photoresist layer 300 of removal by the multiple first interval region 512 and the multiple second interval region
The part of 412 exposures, so as to be formed and inorganic 410 corresponding second photoresist pattern 310 of layer pattern.Second photoresist pattern 310 can
It is arranged at intervals and multiple the second photoresist of bar shaped film layers 311 corresponding with the multiple bar shaped inorganic layer 411 and is located to include
Multiple third interval regions 312 between the multiple the second photoresist of bar shaped film layer 311.
Further, since thickness (itself and the second photoresist of the first photoresist of multiple bar shapeds film layer 511 of the first photoresist pattern 510
The thickness of layer 500 is identical) less than or equal to the thickness of the first photoresist layer 300, therefore the first photoresist layer 300 is being etched
The multiple the first photoresist of bar shaped film layer 511 can also be removed simultaneously.
In an exemplary embodiment of the present invention, it is set between the first photoresist layer 300 and the second photoresist layer 500 inorganic
Layer carries out inorganic layer processing and forms inorganic layer pattern, and inorganic layer pattern potentially acts as the mask of the first photoresist layer 300 of etching
Without extraly adding mask, and in subsequent processing step inorganic layer pattern also be able to its lower floor second
Photoresist pattern plays a protective role, so as to prevent the photoresist during metal layer is etched from risk of caving in occur.
Then, it is mask with inorganic 410 and second photoresist pattern 510 of layer pattern in step s 5 with reference to Fig. 7 and Figure 14
Metal layer 200 is etched, so as to form the wire grating 210 being made of spaced a plurality of metal wire.Here, metal
Layer 200 can be formed by Al.In an embodiment of the present invention, Cl can be used2And/or BCl3Gases is waited to do metal layer
Etching.Due to Cl2And/or BCl3When gases to metal layer carry out dry ecthing when will not with by such as SiO2Wait the inorganic layer of formation
Reaction, therefore, by such as SiO2Wait formation inorganic layer can with the photoresist of protection setting thereunder not by etch effects,
It therefore can be with the metal layer of etched thickness bigger, so as to produce the wire grating of high-aspect-ratio.
Finally, with reference to Fig. 7 and Figure 15, in step s 6, inorganic 410 and second photoresist pattern 510 of layer pattern is removed, so as to
Obtain wire grating polaroid.Specifically, can to remove the multiple bar shaped from a plurality of metal wire of wire grating 210 inorganic
Layer 411 and the second photoresist of the multiple bar shaped film layer 311, so as to obtain wire grating polaroid.
In conclusion the wiregrating width of wire grating and wiregrating are directly determined by impression block with of the prior art
Depth is compared, and in the present invention, segmented etching prepares photoresist/inorganic (such as SiO2) transition zone, and use Cl2/BCl3Wait gas
Body etch such as Al metal layer, due to this two classes gas not with SiO2Reaction, therefore do not deposited during metal layer is etched
It is etched in size, etching period can be extended, so as to obtain high depth wire grating, photoresist is reduced and collapse in moulding process
The risk collapsed.
Although having show and described some exemplary embodiments of the present invention, it will be understood by those skilled in the art that
It, can be to these in the case where not departing from the principle and spirit of the invention defined by the claims and their equivalents
Embodiment is modified.
Claims (10)
- A kind of 1. method for manufacturing wire grating polaroid, which is characterized in that including：Metal layer, the first photoresist layer, inorganic layer and the second photoresist layer are sequentially formed in substrate；Impression block is provided, coining processing is carried out to the second photoresist layer using impression block, to form the first photoresist pattern, first Photoresist pattern include spaced multiple bar shaped the first photoresist film layers and positioned at the multiple the first photoresist of bar shaped film layer it Between multiple first interval regions；Inorganic layer is etched using the first photoresist pattern as mask, to form inorganic layer figure corresponding with the first photoresist pattern Case；The first photoresist layer is etched using inorganic layer pattern as mask, to form the second photoresist figure corresponding with inorganic layer pattern Case；Metal layer is etched as mask using inorganic layer pattern and the second photoresist pattern, to be formed by spaced a plurality of gold Belong to the wire grating that line is formed；AndInorganic layer pattern and the second photoresist pattern are removed, so as to obtain wire grating polaroid,Wherein, inorganic layer is formed by material of the removal condition different from the first photoresist layer and the second photoresist layer.
- 2. according to the method described in claim 1, it is characterized in that, inorganic layer is by SiO2Or Si3N4It is formed.
- 3. according to the method described in claim 1, it is characterized in that, the second photoresist layer has less than or equal to the first photoresist layer The thickness of thickness.
- 4. according to the method described in claim 1, it is characterized in that, metal layer is formed by Al.
- 5. according to the method described in claim 1, it is characterized in that, the method is additionally included in be formed after the first photoresist pattern And before inorganic layer pattern is formed, impression block and the multiple first interval region of removal are removed from the second photoresist layer In remaining second photoresist layer.
- 6. according to the method described in claim 1, it is characterized in that, in the second photoresist pattern is formed, etch away the multiple Bar shaped the first photoresist film layer.
- 7. according to the method described in claim 1, it is characterized in that, in wire grating is formed, Cl is used2And/or BCl3To gold Belong to layer to be etched.
- 8. according to the method described in claim 1, it is characterized in that, inorganic layer pattern include be arranged at intervals and with the multiple item The corresponding multiple bar shaped inorganic layers of shape the first photoresist film layer and between the multiple bar shaped inorganic layer and with it is described more Corresponding multiple second interval regions of a first interval region, the second photoresist pattern include being arranged at intervals and with the multiple bar shaped Corresponding multiple bar shaped the second photoresist film layers of inorganic layer and multiple between the multiple the second photoresist of bar shaped film layer Three interval regions.
- 9. according to the method described in claim 8, it is characterized in that, in inorganic layer pattern and the second photoresist pattern is removed, from The multiple bar shaped inorganic layer and the multiple bar shaped the second photoresist film layer are removed on a plurality of metal wire.
- 10. according to the method described in claim 1, it is characterized in that, substrate is by glass, polyimides or poly terephthalic acid second Diol ester is formed.
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| CN201711463609.2A CN108254823A (en) | 2017-12-28 | 2017-12-28 | The method for manufacturing wire grating polaroid |
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| CN201711463609.2A CN108254823A (en) | 2017-12-28 | 2017-12-28 | The method for manufacturing wire grating polaroid |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110456438A (en) * | 2019-06-27 | 2019-11-15 | 北海惠科光电技术有限公司 | A kind of reflective polaroid and preparation method thereof and display panel |
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| CN110456438A (en) * | 2019-06-27 | 2019-11-15 | 北海惠科光电技术有限公司 | A kind of reflective polaroid and preparation method thereof and display panel |
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