CN108151878A - Snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum - Google Patents
Snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 196
- 238000001228 spectrum Methods 0.000 claims abstract description 14
- 230000003595 spectral effect Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 41
- 230000000873 masking effect Effects 0.000 claims description 28
- 238000000576 coating method Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 16
- 238000005260 corrosion Methods 0.000 claims description 15
- 230000007797 corrosion Effects 0.000 claims description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 210000001747 pupil Anatomy 0.000 claims description 7
- 238000003709 image segmentation Methods 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000011218 segmentation Effects 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003319 supportive effect Effects 0.000 claims description 2
- 239000000571 coke Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000003331 infrared imaging Methods 0.000 abstract description 2
- 230000033001 locomotion Effects 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 49
- 229920002120 photoresistant polymer Polymers 0.000 description 38
- 241000216843 Ursus arctos horribilis Species 0.000 description 23
- 230000008569 process Effects 0.000 description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 229910052732 germanium Inorganic materials 0.000 description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 15
- 238000004026 adhesive bonding Methods 0.000 description 13
- 238000001039 wet etching Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 8
- 239000005083 Zinc sulfide Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229920006267 polyester film Polymers 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000012010 growth Effects 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000165940 Houjia Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical class [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
- G01J3/0208—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows using focussing or collimating elements, e.g. lenses or mirrors; performing aberration correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/45—Interferometric spectrometry
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Spectrometry And Color Measurement (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum, it is related to infrared imaging spectrographic detection instrument technical field, the cubical real-time acquisition of three-dimensional spectrum data and the microminaturization of imaging spectral instrument in traditional imaging spectrometer are solved the problems, such as, including collimating mirror, micro- imaging lens array, beam splitter, plane mirror, array phase speculum, relay imaging mirror and planar array detector.Multiple imaging is carried out to target scene using micro- imaging lens array, and the imaging spectral instrument of phase-modulation is carried out to multiple image field using array phase speculum, it is coupled by the light field between the corresponding imaging band of micro- imaging lens array interference channel corresponding with array phase speculum, fast illuminated interference imaging is realized to the multichannel of target scene, without complicated motion, have many advantages, such as that microminiature, static, stability are strong, integrated level is high, speed of detection is fast.The three-dimensional data cube of target collection of illustrative plates can be obtained by one-shot measurement, real-time is good.
Description
Technical field
The present invention relates to a kind of snapshot infrared interference imaging spectrometer in infrared imaging spectrographic detection instrument technical field,
Multiple imaging and distributed phase tune are carried out to light field using micro- imaging lens array and array phase speculum more particularly to a kind of
Make the multi-channel miniature snapshot infrared interference imaging spectrometer to realize interference imaging.
Background technology
Characteristics of image and spectral signature are the important means that people identify substance, to the effective of target image and spectral signature
Detection substantially increases the ability that people recognize the world.Imaging features detect position and the strength information for recording object, light
Spectrum signature detection then emits according to specific to different material, reflects, transmitted spectrum, obtains and the relevant information of wavelength.With
The development of scientific and engineering technology, modern measuring instrument tends to develop image and the detectivity of spectrum double mode, i.e., at one
Integration imaging and spectral measurement function, measurement is synchronized to the profile information of same target on instrument, so as to assess in all directions
Objective attribute target attribute correctly recognizes the material world for people and provides stronger means, while on the basis of abundant target information
Simplied system structure improves system stability.Imaging spectral technology is in space exploration, atmospheric remote sensing, earth remote sensing, machine vision
And the fields such as biomedicine all have extremely important use value, therefore combine the imaging spectrometer utensil that collection of illustrative plates measures function
There is very wide application prospect.
Since image information is two-dimensional position intensity signal, spectral information is one-dimensional wavelength power spectral information, therefore is imaged
What spectrometer obtained is three-dimensional data cube.
At present, most of imaging spectrometer using two-dimensional array detector add one-dimensional time push away sweep by the way of obtain three-dimensional
Data cube, it can be that line object is pushed away to sweep or push away wavelength or optical path difference to sweep that the time, which pushes away and sweeps,.Either to line
Object is pushed away to sweep or push away wavelength or optical path difference and be swept, and the time pushes away inswept journey so that it is unfavorable for the spy of dynamic scene target
It surveys, so as to reduce the timeliness identified for target information.
Invention content
The present invention is solves the cubical real-time acquisition of three-dimensional spectrum data and imaging spectral in traditional imaging spectrometer
The microminaturization problem of instrument provides a kind of snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum.
Snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum, including collimating mirror, micro- imaging lens
Array, beam splitter, plane mirror, array phase speculum relay imaging mirror and planar array detector,
The collimated mirror of incident field for carrying target image and spectral information is collimated into parallel light field, micro- imaging lens
Array carries out aperture segmentation in horizontal space to the parallel light field, forms multiple parallel imaging bands, and in image space focal plane
Upper carry out array image-forming；The beam splitter will array image-forming image field carry out intensity decile after project respectively plane mirror and
On array phase speculum, the array phase speculum incident field is carried out distributed phase modulate to be formed it is multiple parallel
Interfere channel；The imaging band that micro- imaging lens array is formed is corresponded with the interference channel that array phase speculum is formed, respectively
Light field in a imaging band parallel transmission in corresponding interference channel, the relay imaging mirror by each interference channel into
As light field is coupled to planar array detector formation interference image array；
To the interference image array of acquisition, the data reconstruction of image segmentation, image change peacekeeping spectrum demodulation is carried out, is finally obtained
Three-dimensional spectrum data cube is taken, sets the number of phase reflection mirror unit in array phase speculum as N × N, then the interference
Contain N × N number of interference image unit in pattern matrix；
It sets each interference image unit to be received by p × p pixel, then planar array detector needs pN × pN pixel；
To the interference image array of pN × pN pixel of acquisition, image segmentation is carried out, forms N2A pixel number is the image list of p × p
Then member is arranged as p × p × N2Interference image three-dimensional data cube；
Each object point in p × p planes is made into discrete Fourier transform along third dimension direction, obtains p × p × N2Figure
Compose three-dimensional data cube；
The beam splitter is made of for the light-duty beam splitter with grid rib structure grid rib, beam splitting window and beam splitting coating, the grid
Rib carries out space to beam splitter and divides to form beam splitting window array, and beam splitting coating is located at the upper of beam splitting window upper surface or beam splitting window and grid rib
Surface, grid rib play a supportive role to beam splitting coating；
Grid rib in aperture plate beam splitter is that its is longitudinally wide in lateral widthTimes, beam splitting window is in lateral width
It is that its is longitudinally wideTimes, beam splitting window is identical in horizontal and vertical duty ratio；
Grid rib width range in the aperture plate beam splitter is 1nm-100cm, beam splitting window width ranging from 1nm-100cm；
Grid rib thickness range is 1nm-100cm, and beam splitting window thickness range is 1nm-100cm；
The cross-section structure of grid rib in the aperture plate beam splitter is single side rectangle, single side parallelogram, single side are trapezoidal, double
Face rectangle, two-sided parallelogram or two-sided ladder-shaped.
Beneficial effects of the present invention：Imaging spectrometer of the present invention is a kind of micro- imaging lens array of utilization to target
Scene carries out multiple imaging, and carries out the imaging spectral instrument of phase-modulation to multiple image field using array phase speculum, leads to
The light field coupling between the corresponding imaging band of micro- imaging lens array interference channel corresponding with array phase speculum is crossed, is realized
The fast illuminated interference imaging to the multichannel of target scene without complicated motion, has microminiature, static, stability
By force, the advantages that integrated level is high.
Imaging spectrometer of the present invention, the three-dimensional data that target collection of illustrative plates can be obtained by one-shot measurement are stood
Side without scanning, has the characteristics that speed of detection is fast, real-time is good.
Description of the drawings
Fig. 1 is the snapshot imaging spectrometer principle of the present invention based on micro- imaging lens array with array phase speculum
Structure chart；
Fig. 2 is in the snapshot imaging spectrometer of the present invention based on micro- imaging lens array and array phase speculum
The image space of micro- imaging lens array matches schematic diagram with interference channel optical；
Fig. 3 is in the snapshot imaging spectrometer of the present invention based on micro- imaging lens array and array phase speculum
The structure diagram of array phase speculum；
Fig. 4 is in the snapshot imaging spectrometer of the present invention based on micro- imaging lens array and array phase speculum
Array phase speculum is to the optical path difference array schematic diagram of modulation and the formation of light field；
Fig. 5 is in the snapshot imaging spectrometer of the present invention based on micro- imaging lens array and array phase speculum
Micro- imaging lens array image space telecentricity multiple imaging schematic diagram；
Fig. 6 is in the snapshot imaging spectrometer of the present invention based on micro- imaging lens array and array phase speculum
The object space telecentric imaging schematic diagram of relay imaging mirror；
Fig. 7 is aperture plate in the infrared interferometer of the present invention based on stepped phase speculum and array of photoswitch
The top view of beam splitter；
Fig. 8 is the level and vertical gate rib structure diagram of ten kinds of aperture plate beam splitters, wherein Fig. 8 a of left part, is schemed
8c, Fig. 8 e, Fig. 8 g, Fig. 8 i, Fig. 8 k, Fig. 8 m, Fig. 8 o, Fig. 8 q and Fig. 8 s are the main view sectional view of ten kinds of aperture plate beam splitters；Right side
Partial Fig. 8 b, Fig. 8 d, Fig. 8 f, Fig. 8 h, Fig. 8 j, Fig. 8 l, Fig. 8 n, Fig. 8 p, Fig. 8 r and Fig. 8 t are respectively corresponding main view sectional view
Left view sectional view；
Fig. 9 a to Fig. 9 f are respectively two-sided grid rib section shape schematic diagram in Fig. 9；
Figure 10 is the vertical view of grizzly bar beam splitter structure；
Figure 11 is the level and vertical gate rib structure diagram of ten kinds of grizzly bar beam splitters, wherein Figure 11 a of left part, is schemed
11c, Figure 11 e, Figure 11 g, Figure 11 i, Figure 11 k, Figure 11 m, Figure 11 o, Figure 11 q and Figure 11 s are that the main view of ten kinds of grizzly bar beam splitters is cutd open
Face figure；T points of Figure 11 b, Figure 11 d, Figure 11 f, Figure 11 h, Figure 11 j, Figure 11 l, Figure 11 n, Figure 11 p, Figure 11 r and Figure 11 of right part
The left view sectional view of main view sectional view Wei not corresponded to；
Figure 12 is the preparation process schematic diagram of aperture plate pellicular beamsplitters；
Figure 13 is the preparation process schematic diagram of grizzly bar pellicular beamsplitters；
Figure 14 is the process schematic that array phase speculum is obtained by the method for two-dimentional repeatedly film deposition；
Figure 15 is the process schematic that array phase speculum is obtained by the method for two-dimentional multiple etching；
Figure 16 is the process schematic that array phase speculum is obtained by the mixed method of another dimension plated film of one-dimensional etching；
Figure 17 be it is micro- imaging lens array selective refraction type it is micro- imaging lens array when manufacturing process schematic diagram；
Figure 18 be it is micro- imaging lens array select diffraction type it is micro- imaging lens array when manufacturing process schematic diagram；
Figure 19 is the snapshot imaging spectrometer of the present invention based on micro- imaging lens array with array phase speculum
In image spectrum three-dimensional data reconstruct schematic diagram.
Specific embodiment
Specific embodiment one illustrates present embodiment with reference to Fig. 1 to Figure 19, based on micro- imaging lens array and array phase
The snapshot imaging spectrometer of speculum, including collimating mirror 1, micro- imaging lens array 2, beam splitter 3, plane mirror 4, array phase
Speculum 5, relay imaging mirror 6 and planar array detector 7.
Incident beam collimation from target scene is directional light by collimating mirror 1, and micro- imaging lens array 2 is by directional light in horizontal stroke
Aperture segmentation is carried out to space, forms multiple parallel imaging bands, and array image-forming is carried out on its image space focal plane；Beam splitter
3 will respectively project after array image field progress intensity decile on plane mirror 4 and array phase speculum 5, so as to obtain mesh
The relevant image field array of target two.Plane mirror 4 and array phase speculum 5 are in mirror position relative to beam splitter.Battle array
Horizontal space is divided into multiple localization by row phase reflection mirror 5, and each localization corresponds to a phase on array phase speculum 5
Position mirror unit.Array phase speculum 5 carries out distributed modulation, each phase reflection mirror list to the phase of incident field
The corresponding amount of phase modulation of member, so as to form multiple parallel interference channels.
The imaging band that micro- imaging lens array 2 is formed is corresponded with the interference channel that array phase speculum 5 is formed, from
And the image field in each parallel imaging channels is modulated by phase mass of the array phase speculum 5 in the form of spatial distribution
The parallel transmission in corresponding interference channel afterwards, and by relay imaging mirror 6, on planar array detector 7 with plane reflection
The light field coherent superposition that corresponding region reflects on mirror 4, so as to obtain interference image array, and each interference image unit corresponds to one
A imaging band and an interference channel, so as to a corresponding phase difference.Image segmentation, figure are carried out to two-dimentional interference image array
Data reconstruction as becoming the demodulation of peacekeeping spectrum, the final three-dimensional spectrum data cube for obtaining target scene.
Illustrate present embodiment with reference to Fig. 2, micro- imaging lens array 2 described in present embodiment is by incident field in lateral sky
Between be divided into multiple parallel imaging bands, and array phase speculum 5 by incident field horizontal space be divided into it is multiple simultaneously
Capable interference channel, the image space of each imaging band are located at a phase reflection mirror unit institute on array phase speculum
Within corresponding square region, so as to which an imaging band be made to correspond to an interference channel.It is each imaged in micro- imaging lens array
There are one image spaces 8 for mirror unit tool, are round visual field, are set as Φ1, and channel 9 is each interfered to be square aperture.
If the size of each phase reflection mirror unit of array phase speculum 5 is a × a, then each interfere the hole of channel
Diameter is a × a, in order to realize imaging band and interfere the coupling of light field between channel, each imaging lens list in micro- imaging lens array
Be undercut construction between the square aperture of the round image space 8 of member and each interference channel 9, i.e., micro- imaging lens array each into
As the corresponding round image space of mirror unit is the inscribed circle of each phase reflection mirror unit square aperture of array phase speculum.
Therefore, the image space Φ of each imaging band1Between the length of side a of each phase reflection mirror unit of array phase speculum
Relationship is Φ1=a.Meanwhile if the number of unit of array phase speculum is N × N, the true field 10 of relay imaging mirror is
Φ2, in order to realize that relay imaging mirror is coupled to receive each interference channel light field, the true field Φ of relay imaging mirror2With array
Relationship between the size a of phase reflection mirror unit and matrix number N is
Illustrate present embodiment with reference to Fig. 3 and Fig. 4, array phase speculum 5 is phase reflection mirror with different thickness
Unit is arranged according to certain thickness arrangement mode.On the basis of (0,0) a phase reflection mirror unit 5-1, setting the
(1,0) a phase reflection mirror unit 5-2 is h relative to the thickness of (0,0) a phase reflection mirror unit, then (m, n) a phase
Position mirror unit is (nN+m) h relative to the thickness of (0,0) a phase reflection mirror unit.The thickness of phase reflection mirror unit
It is incremented by successively by step-length of h along m directions, it is incremented by successively by step-length of Nh along n directions.In order to realize the efficiently sampling of interference pattern,
Thickness requirement h≤λ/4.The wave number of light wave is set as a result, as ν, and array phase speculum 5 can be with table to the phase-modulation effect of light field
It is shown as
In formula, (x, y) is coordinate, and j is imaginary number, and rect () is rectangular function；Array phase described in present embodiment is anti-
It penetrates mirror 5 and distributed phase modulation is carried out to incident field, so as to form the phase difference array of spatial distribution.When plane mirror 4
When being overlapped with (0,0) a phase reflection mirror unit 5-1 of array phase speculum 5 relative to 3 mirror image of beam splitter, (0,0)
Phase difference corresponding to a interference channel is 0, and the phase difference corresponding to (1,0) a interference channel is(2,0)
Phase difference corresponding to a interference channel isAnd so on, the phase difference corresponding to (m, n) a interference channel
ForInterference optical field 11 has the phase difference battle array of fixed space distribution in horizontal space as a result,
Row 12, each phase difference spatial domain correspond to an interference channel.
When plane mirror 4 and the (m of array phase speculum 50,n0) a phase reflection mirror unit is relative to beam splitter 3
When mirror image overlaps, (m0,n0) phase difference corresponding to a interference channel is 0, (m0-1,n0) it is a interference channel corresponding to
Phase difference is -4 π ν h, (m0+1,n0) phase difference corresponding to a interference channel for 4 π ν h, and so on, (m, n) a interference
Phase difference corresponding to channel is 4 π ν (nN+m-n0N-m0)h.Pass through control plane speculum and array phase speculum as a result,
Out of phase mirror unit is overlapped relative to the mirror image of beam splitter, can carry out unilateral sampling, bilateral sampling to interference image
With small bilateral sampling.As (the m of array phase speculum 50,n0) a phase reflection mirror unit is located at the of micro- imaging lens array 2
(m0,n0) a imaging mirror unit image space focal plane on when, in order to realize good imaging effect, array phase speculum 5 remaining
Phase reflection mirror unit should be located within the image space depth of focus of micro- remaining imaging mirror unit of imaging lens array 2.If micro- imaging lens array 2
In be each imaged the depth of focus of mirror unit as Z, then each the depth of focus of imaging mirror unit should meet relationship Z >=max { (n0N+m0)h,
(N2-1-n0N-m0)h}。
Illustrate present embodiment with reference to Fig. 5, in order to be implemented as coupling as the light field between channel and interference channel, inhibit
The crosstalk of optical signal, the chief ray of the imaging beam corresponding to each imaging band are necessary between each imaging band and each interference channel
Normal incidence relationship is kept with the phase reflection mirror unit corresponding to each interference channel.Micro- imaging lens array 2 uses multiple imaging as a result,
Square telecentric beam path structure.Micro- imaging lens array 2 by preceding group of micro- imaging lens array 2-1, organize micro- imaging lens array 2-2 and diaphragm battle array afterwards
2-3 compositions are arranged, wherein each micro- imaging mirror unit in preceding group of micro- imaging lens array 2-1 organizes micro- imaging lens array 2- after being located at
On the object space focal plane that micro- imaging mirror unit is corresponded in 2, and diaphragm array 2-3 is set to each of preceding group of micro- imaging lens array 2-1
Before a micro- imaging mirror unit, which is also the exit pupil position of collimating mirror 1.Thus target scene 13 is sent out
Light forms multiple image array 14, and each imaging is logical after the collimation of collimating mirror 2 and the multiple imaging of micro- imaging lens array 3
The chief ray of imaging beam corresponding to road elementary area is perpendicular to each phase reflection mirror unit of array phase speculum
Reflecting surface.
Illustrate present embodiment with reference to Fig. 6, the effect of the relay imaging mirror 6 described in present embodiment is by image and interference
Information, which is transferred on infrared planar array detector, carries out ionization meter.Relay imaging mirror works in infrared band, using silicon, germanium, selenium
Change the infrared optical materials such as zinc, zinc sulphide to make.Infrared planar array detector 7 is by infrared focal plane array 7-1 and cold screen diaphragm 7-2
It forms, infrared focal plane array uses indium antimonide (InSb) or mercury cadmium telluride (HgCdTe) material.The object-side numerical of relay imaging mirror 6
Aperture needs the image-side numerical aperture with micro- imaging mirror unit each in micro- imaging lens array 2 to match, while relay imaging mirror 6
Emergent pupil need to match with the cold screen diaphragm 7-2 of infrared planar array detector, therefore the use object space telecentricity of relay imaging mirror 6
Structure.The exit pupil position of relay imaging mirror is arranged on its image space focal plane, and by the cold screen light of infrared planar array detector
Late 7-2 is overlapped with the image space focal plane of relay imaging mirror, while ensures array phase speculum and infrared planar array detector focal plane
Object-image relation between array 7-1 then realizes relay imaging mirror emergent pupil and of the cold screen diaphragm of infrared planar array detector
Match so that the chief ray of each visual field of object space perpendicular to array phase speculum each phase reflection mirror unit planar exit, it is complete
Cheng Yuwei is imaged the optical match of lens array each unit image space, and multiple image array 14 is imaged onto planar array detector 7
Focal plane arrays (FPA) 7-1 on form interference image array 15.If the image-side numerical hole of mirror unit is respectively imaged in micro- imaging lens array
Diameter is NA1, the object-side numerical aperture of relay imaging mirror is NA2, then the object-side numerical aperture of relay imaging mirror should meet relationship NA2
=NA1。
Beam splitter 3 described in present embodiment uses parallel plate structure in infrared band, by beam-splitting board and compensating plate structure
Into, beam-splitting board using infrared optical materials such as zinc selenide (ZnSe), potassium bromide (KBr), cesium iodides (CsI) as base material,
Or using semi-conducting materials such as undoped silicon (Si), germanium (Ge) and GaAs (GaAs) as base material；Compensating plate is adopted
With the base material identical with beam-splitting board.Beam-splitting board and planarity requirements≤λ/20 on two surfaces of compensating plate, surface roughness
It is required that≤3nm, λ are wavelength.For the substrate of high refractive index, first surface does not need to plating beam splitting coating, it is only necessary at second
Plate anti-reflection film in surface.For the substrate of low-refraction, it is only necessary to deposit broadband beam splitting coating on first surface of substrate, make it anti-
Rate is penetrated close to 0.5.And for the substrate of middle refractive index, it both needs to plate beam splitting coating, it is also desirable to anti-reflection film.When using high refractive index
Substrate of the silicon materials as semiconductor beam splitter when, it is 3.4 that silicon substrate material, which corresponds to refractive index, and coating material can select
For germanium and polyethylene or polypropylene.The intensity reflectance difference in different polarization direction can be by reducing light beam on beam splitter
Incidence angle and reduce.If having N × N number of phase reflection mirror unit in array phase speculum, each phase reflection mirror unit
Size is that a × a, beam-splitting board and compensating plate are placed with optical axis direction in 45 °, then the size of beam-splitting board and compensating plate is
The light and thin type beam splitter with grid rib structure can also be used in beam splitter, and aperture plate pellicular beamsplitters are to utilize wire-grid structure
Beam splitting film is supported.Since beam splitting film is too thin, it is impossible to which self-supporting is lived beam splitting film support using wire-grid structure.
Wire-grid structure uses semi-conducting material, and beam splitting film uses polyester film.Wire-grid structure needs the knot with stepped phase speculum
Structure is mutually matched.Aperture plate pellicular beamsplitters are placed with systematic optical axis in 45 °, by the geometric parameter of stepped phase speculum, aperture plate
The size in pellicular beamsplitters each grid period is
Specific to illustrate present embodiment with reference to Fig. 7 and Fig. 8, the wire-grid structure of aperture plate pellicular beamsplitters by grid rib 3-1 and is divided
Beam window 3-2 is formed, and grid rib is that its is longitudinally wide in lateral widthTimes, beam splitting window 3-2 is its longitudinal direction in lateral width
WidthTimes, beam splitting window 3-2 has identical duty ratio horizontal and vertical.Since the size of beam splitting window determines system
Luminous flux, therefore the area of beam splitting window 3-2 is far longer than the area of grid rib 3-1.Each beam splitting window 3-2 is in laterally-graded phase
Projection on speculum 4 and longitudinal stepped phase speculum 5 is located on each mirror unit, and every grid rib 3-1 is in transverse direction
Projection on stepped phase speculum 4 and longitudinal stepped phase speculum 5 is positioned at the boundary position of neighboring reflection mirror unit.
The meshes number of two different directions of aperture plate beam splitter is respectively P and Q, P=Q or P ≠ Q；P is reflected with stepped phase
The M directions of mirror stepped phase speculum correspond to, and there are multiple proportions with P by M；Q and stepped phase speculum stepped phase speculum
N directions correspond to, there are multiple proportions with Q by N.
The P directions aperture plate period is a '+b ', and a ' is wide for the single rib in P directions, and b ' is the single beam splitting window width in P directions.Wherein a '
2=a ' 3=...=a ' P；A ' 1 can be identical with other grid ribs with a ' (P+1), can also be different；B ' 1=b ' 2=...=b ' P.
Aperture plate beam splitter P directions total length：Lp=a ' 1+b ' 1+a ' 2+b ' 2+ ...+a ' P+b ' P+a ' (P+1).
The Q directions aperture plate period is c '+d ', and c ' is wide for the single rib in Q directions, and d ' is the single beam splitting window width in Q directions.Wherein c '
2=c ' 3=...=c ' q；C ' 1 can be identical with other grid ribs with c ' (Q+1), can also be different；D ' 1=d ' 2=...=d ' Q.
Aperture plate beam splitter Q directions total length：LQ=c ' 1+d ' 1+c ' 2+d ' 2+ ...+c ' Q+d ' Q+c ' (Q+1).
Aperture plate beam splitter rib width a ', c ' ranging from 1nm-100cm, beam splitting window width width b ', d ' ranging from 1nm-
100cm；Aperture plate beam splitter rib thickness range is 1nm-100cm, and beam splitting window thickness range is
1nm-100cm.It can select plus compensating plate or be not added with according to design parameter, the structure and material of compensating plate can be with
It is identical with beam splitter, it can also be different.
The shape of ten kinds of aperture plate beam splitters in Fig. 8, the beam splitting window of aperture plate beam splitter and grid rib are homostyructure or heterogeneous
Structure, Fig. 8 a, 8b, Fig. 8 e, 8f, Fig. 8 i, 8j, Fig. 8 m, 8n, Fig. 8 q, the beam splitting window of 8r and grid rib are homostyructure or hetero-junctions
Structure；Fig. 8 c, 8d, Fig. 8 g, 8h, Fig. 8 k, 8l, Fig. 8 o, 8p, Fig. 8 s, 8t, beam splitting window and grid rib be homostyructure.Aperture plate beam splitting
In device structure, the section of grid rib structure can be rectangle (Fig. 8 i, Fig. 8 k, Fig. 8 m, Fig. 8 o), parallelogram (Fig. 8 a, Fig. 8 c,
Fig. 8 e, Fig. 8 g), trapezoidal (Fig. 8 q, Fig. 8 s), arc or other shapes.In same aperture plate beam splitter, the grid rib of horizontal direction
Grid rib with vertical direction can be same structure type, can also be different.
With reference to Fig. 9, in aperture plate beam splitter structure, the section of grid rib structure can also be two-sided rectangle (Fig. 9 a, Fig. 9 b), double
Face parallelogram (Fig. 9 c, Fig. 9 d), two-sided ladder-shaped (Fig. 9 e, Fig. 9 f) or other shapes.
Illustrate present embodiment with reference to Figure 10, Figure 10 is grizzly bar beam splitter structure scheme vertical view, and 3-1 is grid rib, and 3-2 is
Beam splitting window.The meshes number of grizzly bar beam splitter be Q, Q is corresponding with the N directions of stepped phase speculum stepped phase speculum, N and
There are multiple proportions by Q.The Q directions grizzly bar period is c '+d ', and c ' is wide for the single rib in Q directions, and d ' is the single beam splitting window width in Q directions.
Wherein c ' 2=c ' 3=...=c ' Q；C ' 1 can be identical with other grid ribs with c ' (Q+1), can also be different；D ' 1=d ' 2=...
=d ' Q.Aperture plate beam splitter Q directions total length：LQ=c ' 1+d ' 1+c ' 2+d ' 2+ ...+c ' Q+d ' Q+c ' (Q+1).
Grizzly bar beam splitter rib width c ' ranging from 1nm-100cm, beam splitting window width width d ' ranging from 1nm-100cm；Grid
Beam splitter rib thickness range is 1nm-100cm, and beam splitting window thickness range is 1nm-100cm.It can be selected according to design parameter
Add compensating plate or be not added with, the structure and material of compensating plate can be identical with beam splitter, can also be different.
The beam splitting window and grid rib of grizzly bar beam splitter can be homostyructure or heterojunction structure similarly with aperture plate beam splitter.Grid
In beam splitter structure, the section of grid rib structure equally can be rectangle, parallelogram, trapezoidal or other shapes.Same
In a grizzly bar beam splitter, the grid rib of horizontal direction and the grid rib of vertical direction can be same structure type, can also be different.
Figure 11 is the level and vertical gate rib structure diagram of 10 kinds of grizzly bar beam splitters.In grizzly bar beam splitter structure, grid rib
The section of structure can also be two-sided rectangle, two-sided parallelogram, two-sided ladder-shaped or other shapes.
In present embodiment, the grid rib material in aperture plate beam splitter and grizzly bar beam splitter can select metal, nonmetallic inorganic
The mixing material of material or organic material or several properties.Such as aluminium, copper, titanium, nickel, gold metal, aluminium oxide, ceramics,
The nonmetallic materials such as quartz, glass, calcirm-fluoride, zinc selenide, zinc sulphide, silicon, germanium, silica, silicon nitride and with support
The organic material of effect.Beam splitting window material can be quartz, glass, calcirm-fluoride, magnesium fluoride, barium fluoride, lithium fluoride, zinc selenide,
Zinc sulphide, silicon, germanium, silica, silicon nitride, polyimides, PMMA, aluminium, beryllium, non-metal inorganic material or organic material.This
Embodiment do not propose slave X ray to far infrared wave segment limit or even the refractive material of wider wavelength band, reflecting material with
And absorbing material can be applied in the device.
Illustrate present embodiment with reference to Figure 12, Figure 12 is makes aperture plate pellicular beamsplitters process；Wire-grid structure is carried out first
Making.Wire-grid structure is made of micro-opto-electromechanical system (MOEMS) technique, specifically with reference to shown in Figure 12, is chosen undoped
The semi-conducting materials such as silicon (Si), germanium (Ge) and GaAs (GaAs) are as substrate, spin coating one first on semiconductor base materials
Layer photoresist, then exposed and developed with the mask plate of grids pattern such as Figure 12 a, removal is located at the photoresist of beam splitting window position,
Expose semiconductor substrate surface, such as Figure 12 b.Then using wet etching or dry etching technology, the half of beam splitting window position is removed
Conductor base material forms engraved structure, such as Figure 12 c.The finally photoresist at removal grid rib position, just forms wire-grid structure,
Such as Figure 12 d.Beam splitting window material is fixed in wire-grid structure, beam splitting window is supported using grid rib, is realized using beam splitting window
Beam splitting is finally completed the making of aperture plate pellicular beamsplitters, such as Figure 12 e.
When the beam splitting film used is thicker, grizzly bar pellicular beamsplitters can be used, grizzly bar pellicular beamsplitters are to utilize grizzly bar
Structure is supported beam splitting film.Structure of grid uses semi-conducting material, and beam splitting film uses polyester film.Structure of grid needs
To match with the structure of laterally-graded phase reflection mirror.Grizzly bar pellicular beamsplitters are placed with systematic optical axis in 45 °, by ladder phase
The geometric parameter of position speculum, the size of each band period of grizzly bar pellicular beamsplitters are
Illustrate present embodiment with reference to Figure 13, Figure 13 is the process schematic for making grizzly bar pellicular beamsplitters, due to beam splitting
The size of window determines the luminous flux of system, therefore the width of beam splitting window is far longer than the width of grid rib.Every beam splitting window is in horizontal stroke
Projection on stepped phase speculum 4 is located on each mirror unit, and every grid rib is in laterally-graded phase reflection mirror 4
On projection positioned at neighboring reflection mirror unit boundary position.
For grizzly bar pellicular beamsplitters, the making of structure of grid is carried out first.Structure of grid uses micro-opto-electromechanical system
(MOEMS) technique makes, and chooses the semi-conducting materials such as undoped silicon (Si), germanium (Ge) and GaAs (GaAs) as substrate,
One layer of photoresist of spin coating first on semiconductor base materials, as depicted in fig. 13 a, then puts the mask plate with grizzly bar figure
In the substrate of the complete photoresist of spin coating, by exposed and developed, removal is located at the photoresist at beam splitting window position, exposes beam splitting window
Semiconductor substrate surface at position, as illustrated in fig. 13b.Then using wet etching or dry etching technology, beam splitting window is removed
Semiconductor base materials at position form engraved structure, as shown in figure 13 c.The finally photoresist at removal grid rib position, just
Structure of grid is formed, as shown in figure 13d.Polyester film is fixed on structure of grid, polyester film is propped up using grid rib
Support is realized the beam splitting of polyester film using beam splitting window, is finally completed the making of grizzly bar pellicular beamsplitters, as shown in figure 13e.
In present embodiment, the production method of aperture plate beam splitter can be divided into integrated manufacturing method and split production method.One
Body production method 1：Ultraprecise machining process.It is realized on integral material with technologies such as cutting, grinding, polishings；Making side
Method 2：Using MEMS technology production method.Carried out on integral material through photoetching, dry etching, wet etching the methods of etc..
For example, the anisotropy rot etching method of monocrystal material, RIE lithographic methods, ICP etching plus surface polishing method of modifying etc. and
The production method that related MEMS approach is combined.
Embodiment 1：Aperture plate beam splitter shown in Fig. 8 s is made, material is two-sided for high flatness and the high depth of parallelism
Polish (100) monocrystalline silicon piece.Preparation method is：
1st, after the cleaning twin polishing monocrystalline silicon surface growth or the dielectric films such as steam coating silicon dioxide and silicon nitride or
Composite membrane is as masking film；
2nd, photoetching is oriented, exposes side slot figure, the masking film in flash trimming slot figure is removed by etching, exposes monocrystalline silicon table
Face.Using Silicon Crystal Anisotropic Etching corrosion side slot, corrosion depth is equal to the final thickness of beam splitting window；Side groove shape is except figure
Except showing, can also at a certain distance it be arranged by multiple rectangular or squares.
3rd, second of photoetching is carried out, exposes beam splitting window figure, the masking film in beam splitting window figure is removed by etching, is exposed
Monocrystalline silicon surface.Photoresist is removed, using Silicon Crystal Anisotropic Etching liquid while edge etching slot and beam splitting window, corrosion depth is extremely
Side groove corrosion is 0 to thickness, and beam splitting window reaches final thickness at this time.
4th, removal masking film, is deposited beam splitting coating, completes device and prepares.
Embodiment 2：It is the two-sided grid rib beam splitter of Fig. 9 f for horizontal and vertical grid rib structure, it can be in aforementioned manners
It makes, the difference is that needing to prepare two-sided masking film, is realized by dual surface lithography with two-sided corrosion, upper and lower surfacial pattern
It is identical.In first time photoetching corrosion, the sum of upper and lower surface side groove corrosion depth is the final thickness values of beam splitting window.
Embodiment 3：The shape that structure is aperture plate beam splitter such as Fig. 8 k is made, material is parallel with height for high flatness
The twin polishing silicon chip of degree.Its fabrication processing is as follows：
1st, twin polishing monocrystalline silicon surface vapor deposition aluminium film after the cleaning or heat growth silicon dioxide or vapor deposition silicon nitride etc.
Metallic film or dielectric film or composite membrane are as masking film；
2nd, side slot figure is exposed in photoetching, and the masking film in flash trimming slot figure is removed by etching, exposes monocrystalline silicon surface.It adopts
With ICP or RIE technologies side slot, corrosion depth is equal to the final thickness of beam splitting window；Side groove shape, can also be by more in addition to diagram
A rectangular or square or circle or ellipse or other polygonal shapes, arrange at a certain distance.
3rd, second of photoetching is carried out, exposes beam splitting window figure, the masking film in beam splitting window figure is removed by etching, is exposed
Monocrystalline silicon surface.Photoresist is removed, using ICP or RIE technologies while edge etching slot and beam splitting window, corrosion depth to side groove corrosion
It is 0 to thickness, beam splitting window reaches final thickness at this time.
4th, except masking film, beam splitting coating is deposited, completes device and prepares.
Embodiment 4：
It is the two-sided grid rib beam splitter of Fig. 9 b for horizontal and vertical grid rib structure, can prepares in aforementioned manners, institute
Unlike, it needs to prepare two-sided masking film, be realized by dual surface lithography with two-sided etching, upper and lower surfacial pattern is identical.
During first time chemical wet etching, the sum of upper and lower surface side groove corrosion depth is the final thickness values of beam splitting window.
Embodiment 5：
The shape that structure is aperture plate beam splitter such as Fig. 8 o is made, twin polishing of the material for high flatness and the high depth of parallelism
(110) monocrystalline silicon piece.Its fabrication processing is similar to Example 1.
Embodiment 6：
It is to structure and the corresponding two-sided grid rib beam splitter of the shape of aperture plate beam splitter such as Fig. 8 o, material and embodiment 5
Identical, production method is similar to Example 5, the difference is that need to prepare two-sided masking film, by dual surface lithography with it is two-sided
It etches to realize, upper and lower surfacial pattern is identical.In first time chemical wet etching, the sum of upper and lower surface side groove corrosion depth is divides
The final thickness values of beam window.
Other materials or the aperture plate of structure can also be realized with grizzly bar beam splitter by above method, can also pass through MEMS
Wet etching and dry etching and two methods alternately realize, on the make may be used and a certain conventional crystal orientation
Into required angle monocrystal material as substrate, corrode and the structure with inclination angle；It can also be carved by the method for Sloped rotating
Lose the structure with inclination angle；Also can design compensation figure, so as to get structure it is more accurate.
In present embodiment, it is also an option that following three kinds of modes make：First, it is of the same race that can select beam splitting window and grid rib
Or different materials, grid rib structure is prepared on the beam splitting window surface with backing material or without backing material, grid rib structure can pass through
MEMS technology, such as X-ray lithography, deep-UV lithography, vapor deposition and photoetching and stripping, electroforming technique realize metal with it is nonmetallic
The grid rib of the multiple materials such as material, semi-conducting material, organic matter.Using the flexibility of the technologies such as X-ray lithography, pass through beam angle
The control of degree can realize the grid rib structure of various structures form.After grid rib completes, for carrying beam splitting window support knot
The substrate of structure need to remove support construction.Beam splitting coating is plated, beam splitter is completed and makes.
2nd, beam splitting window and grid rib is selected to be bonded in beam splitting window construction and grid rib structural material for of the same race or different materials
Together, then with ultraprecise mechanical processing or MEMS technology formed grid rib structure, then remove beam splitting window surface bonding agent and
Beam splitting window supporter.Beam splitting coating is plated, beam splitter is completed and makes.
3rd, beam splitting window and grid rib can be selected as of the same race or different materials, it will with ultraprecise mechanical processing or MEMS technology
Beam splitting window construction makes respectively with grid rib structure, is then combined together them with bonding or other connection modes.
Illustrate present embodiment with reference to Figure 14, array phase speculum can be in glass, quartz (SiO2), silicon (Si), germanium
(Ge), it in the substrate of materials such as GaAs (GaAs), is realized by the method for two-dimentional repeatedly film deposition.First select glass,
Quartz (SiO2), silicon (Si), germanium (Ge), the materials such as GaAs (GaAs) as substrate, then by gluing, mask, exposure and
Development removes the photoresist of half base widths, exposes the substrate surface of half of base widths, using electron beam evaporation or magnetic control
Certain thickness film layer is deposited in the coating process such as sputtering, then removes the photoresist and film layer of masking part, just in one direction
Two-stage step structure is formed, as shown in figures 14a.Then again in this direction to step structure carry out gluing, mask, exposure and
Development is exposed independent from the surface of step width half on each step, then again using electron beam evaporation or magnetron sputtering etc.
Coating process carries out film deposition, which is the half of last plated film thicknesses of layers, then removes the light of masking part
Photoresist and film layer just form level Four step structure, as shown in fig. 14b in this direction.The process is recycled in this direction, every time
The width of mask is the half of last mask width, and the thickness of each film layer is the half of last thicknesses of layers, can
The step structure of needs is obtained in this direction.Then in the other directions, pass through gluing, mask, exposed and developed, exposing
The surface of base length half carries out film deposition, the thicknesses of layers using coating process such as electron beam evaporation or magnetron sputterings
It is the half of last plated film thicknesses of layers, then removes the photoresist and film layer of masking part, just also forms two in this direction
Grade step structure, as shown in figure 14 c.Then make in this direction in this direction by gluing, mask, exposed and developed again
Each step be exposed independent from the surface of length of bench half, then again using coating process such as electron beam evaporation or magnetron sputterings
Film deposition is carried out, which is the half of last plated film thicknesses of layers, then removes the photoresist and film of masking part
Layer just forms two-dimensional stepped structure, as shown in Figure 14 d.The process is recycled in this direction, and the width of each mask is last
The half of mask width, the thickness of each film layer are the half of last thicknesses of layers, and the final array phase for obtaining needs is anti-
Penetrate mirror.
Illustrate present embodiment with reference to Figure 15, array phase speculum or in silicon (Si), germanium (Ge) and GaAs
(GaAs) etc. in the substrate of semi-conducting materials, the method for passing through two-dimentional multiple etching is realized；First select silicon (Si), germanium (Ge) and
The semi-conducting materials such as GaAs (GaAs) are as substrate, and then by gluing, mask, exposed and developed, half of substrate of removal is wide
The photoresist of degree exposes the substrate surface of half of base widths, using wet etching or dry etch process to exposed substrate
Surface carries out the etching of certain depth, then removes the photoresist of masking part, just forms two-stage step structure in this direction, such as
Shown in Figure 15 a.Then there are two the substrates of step structure to carry out gluing, mask, exposed and developed to having in this direction again,
The substrate surface of the step width half is exposed independent from each step, then uses wet etching or dry etch process again
Exposed substrate surface is performed etching, etching depth is the half of last etching depth, removes the photoresist of masking part,
Just level Four step structure is formed in this direction, as illustrated in fig. 15b.The process, the width of each mask are recycled in this direction
It is the half of last mask width, each etching depth is the half of last etching depth, can be obtained in this direction
The step structure that must be needed.Then in the other directions, pass through gluing, mask, exposed and developed, half of base length of removal
Photoresist, expose half of base length substrate surface, using wet etching or dry etch process to exposed substrate table
Face performs etching, and etching depth is the half of last etching depth, then removes the photoresist of masking part, just in this direction
Also two-stage step structure is formed, as shown in fig. 15 c.Then it carries out gluing, mask, exposed and developed in this direction again, makes
Each step in this direction is exposed independent from the substrate surface of length of bench half, then uses wet etching or dry etching again
Technique performs etching exposed substrate surface, and etching depth is the half of last etching depth, then removes masking part
Photoresist just forms two-dimensional stepped structure, as shown in Figure 15 d.The process is recycled in this direction, on the width of each mask is
The half of mask width, the depth etched every time are the half of last etching depth, final to obtain the array phase needed
Position speculum.
Illustrate present embodiment with reference to Figure 16, array phase speculum or in silicon (Si), germanium (Ge) and GaAs
(GaAs) etc. in the substrate of semi-conducting materials, the mixed method for passing through another dimension plated film of one-dimensional etching is realized；Silicon is selected first
(Si), the semi-conducting materials such as germanium (Ge) and GaAs (GaAs) are as substrate, then by gluing, mask, exposed and developed, go
Except the photoresist of half of base widths, expose the substrate surface of half of base widths, using wet etching or dry etch process
The etching of certain depth is carried out to exposed substrate surface, then removes the photoresist of masking part, is just formed in one direction
Two-stage step structure, as illustrated in fig 16 a.Then in this direction again to two-stage step structure substrate carry out gluing,
It is mask, exposed and developed, the surface of step width half is exposed independent from each step, using wet etching or dry etching work
Skill performs etching exposed substrate surface, and etching depth is the half of last etching depth, then removes the light of masking part
Photoresist just forms level Four step structure, as shown in fig 16b in this direction.The process is recycled in this direction, each mask
Width is the half of last mask width, and each etching depth is the half of last etching depth, can be in the direction
It is upper to obtain the step structure needed.Then in the other directions, pass through gluing, mask, exposed and developed, exposing base length
The surface of half carries out film deposition using coating process such as electron beam evaporation or magnetron sputterings, which is last
The half of etching depth, then the photoresist and film layer of masking part are removed, two-stage step structure is just also formed in this direction, such as
Shown in Figure 16 c.Then each step in this direction is made to reveal in this direction by gluing, mask, exposed and developed again
Go out the surface of length of bench half, then carry out film deposition using coating process such as electron beam evaporation or magnetron sputterings again,
The thicknesses of layers is the half of last plated film thicknesses of layers, then removes the photoresist and film layer of masking part, just forms two dimension
Step structure, as shown in figure 16d.The process is recycled in this direction, and the width of each mask is the one of last mask width
Half, the thickness of each film layer is the half of last thicknesses of layers, final to obtain the array phase speculum needed.In practical behaviour
During work, by first recycling etching process in one direction, the step of certain series is formed, is followed again in the other directions
Ring coating process may finally obtain the array phase mirror structure of needs.
After obtaining array phase mirror structure, the high reflections such as gold evaporation, aluminium on array phase mirror structure surface
The reflective coating of rate material ultimately forms array phase speculum.The flatness of each mirror unit of array phase speculum
It is required that≤λ/20, surface roughness requirements≤3nm.
Illustrate present embodiment with reference to Figure 17, micro- imaging lens array described in present embodiment is multiplicated imaging system, will
Measured target is imaged onto plane mirror 4 with forming two pattern matrixes on array phase speculum 5.
It is micro- imaging lens array 2 work in infrared band, can be refractive it is micro- imaging lens array or diffraction type it is micro-
It is imaged lens array.Refractive microlens array, as substrate, is utilized using infrared optical materials such as silicon, germanium, zinc selenide, zinc sulphide
Photoetching hot melting process makes.One layer of photoetching of spin coating first in the substrate of the infrared optical materials such as silicon, germanium, zinc selenide, zinc sulphide
Glue as illustrated in fig 17 a, by mask, exposed and developed, removal part photoresist, forms the rectangular array of photoresist, Ran Houjia
Temperature heats photoresist, since the surface of each photoresist rectangular block of surface tension forms spherical surface, so as to photoresist rectangle
Array becomes photoresist lens array, as illustrated in fig. 17b.Using ion etch process to photoresist lens array and its substrate into
Row etching as shown in fig. 17 c, stops etching, at this time just by photoresist lens array when etching depth is more than the thickness of photoresist
In column jump to base material, micro- imaging lens array is obtained, as shown in Figure 17 d.
Illustrate present embodiment with reference to Figure 18, diffraction type microlens array is using the micro- imaging lens of step structure doubling emitting
Array is quantified, and when quantization digit reaches certain amount, can meet the performance requirement of system.The micro- imaging lens of diffraction type
Array is to be made of infrared optical materials such as silicon, germanium, zinc selenide, zinc sulphide as substrate using lithographic etch process.First
One layer of photoresist of spin coating in the substrate of the infrared optical materials such as silicon, germanium, zinc selenide, zinc sulphide, as shown in figure 18 a.By covering
Mould, exposed and developed, removal part photoresist, exposed portion substrate surface, then using wet etching or dry etch process
The etching of certain depth is carried out to exposed substrate surface, as shown in fig. 18b, then the photoresist of masking part is removed, is just formed
The lens array of two step structures, as shown in Figure 18 c.Then again to have there are two step structure substrate carry out gluing,
It is mask, exposed and developed, part of substrate surface is exposed independent from each step, it is then rotten using wet method again as shown in Figure 18 d
Erosion or dry etch process carry out exposed substrate surface the etching of certain depth, as shown in Figure 18 e.Finally removal mask portion
The photoresist divided just forms the lens array of four step structures, as shown in Figure 18 f.The process is recycled, can be met
Micro- imaging lens array of quantization digit.
Illustrate present embodiment with reference to Figure 19, the collected data of planar array detector described in present embodiment are interference pattern
As array, contain N × N number of interference image unit in interference image array 15, if each interference image unit is by p × p picture
Element receives, then planar array detector needs pN × pN pixel altogether.It, will to interference image array 15 firstly the need of image segmentation is carried out
Interference image array 15 is divided into the interference image unit of corresponding out of phase difference, will contain the interference pattern of pN × pN pixel
As the segmentation of array 15 forms N2A pixel number is the elementary area of p × p.Then it carries out image and becomes dimension, interference image unit is pressed
Take a picture potential difference sequential configuration interference image data cube 16, i.e., by interference image unit by phase difference be ranked sequentially for p × p ×
N2Interference image data cube 16.Spectrum demodulation is finally carried out, interference image data cube 16 is passed through into Fourier transformation solution
Spectral image data cube 17 is adjusted to, i.e., by each object point in 16 each p × p planes of interference image data cube along N2Side
To discrete Fourier transform is made, p × p × N is finally obtained2Spectrum data cube 17.
Obviously, the above embodiments are merely examples for clarifying the description, and is not intended to limit the embodiments.Only
Function is wanted not change, the snapshot imaging spectrometer based on micro- imaging lens array and array phase speculum is on the basis of above description
On, primary element can be made other variations or changes in different ways without departing from the scope of the present disclosure, here need not
All embodiments can not be exhaustive.And the obvious changes or variations thus extended out are still in the present invention
Among the protection domain of creation.
Claims (9)
1. the snapshot imaging spectrometer based on micro- imaging lens array with array phase speculum, including collimating mirror (1), micro- imaging lens
Array (2), beam splitter (3), plane mirror (4), array phase speculum (5), relay imaging mirror (6) and planar array detector
(7), it is characterized in that；
The collimated mirror of incident field (1) for carrying target image and spectral information is collimated into parallel light field, micro- imaging lens
Array (2) carries out aperture segmentation in horizontal space to the parallel light field, forms multiple parallel imaging bands, and in image space coke
Array image-forming is carried out on face；It is anti-that the beam splitter (3) will project plane respectively after the image field progress intensity decile of array image-forming
It penetrates on mirror (4) and array phase speculum (5), the array phase speculum (5) carries out distributed phase tune to incident field
System is divided into multiple parallel interference channels；The imaging band and array phase speculum (5) shape that micro- imaging lens array (2) is formed
Into interference channel correspond, the parallel transmission in corresponding interference channel of the elementary area in each imaging band is described
Imaging light field in each interference channel is formed interference image array by relay imaging mirror (6) coupled to planar array detector (7)；
To the interference image array of acquisition, the data reconstruction of image segmentation, image change peacekeeping spectrum demodulation is carried out, finally obtains three
Spectrum data cube is tieed up, contains N × N number of interference image unit in the interference image array；
It sets each interference image unit to be received by p × p pixel, then planar array detector needs pN × pN pixel；To obtaining
The interference image array of the pN × pN pixel obtained carries out image segmentation, forms N2A pixel number is the elementary area of p × p, so
It is arranged as p × p × N afterwards2Interference image three-dimensional data cube；
Each object point in p × p planes is made into discrete Fourier transform along third dimension direction, obtains p × p × N2Collection of illustrative plates three
Dimension data cube；
The number of phase reflection mirror unit in array phase speculum (5) is set as N × N, the ruler of each phase reflection mirror unit
Very little is a × a, then each the bore of interference channel is identical with the size of each phase reflection mirror unit；In micro- imaging lens array (2)
The number of micro- imaging mirror unit is identical with the number of phase reflection mirror unit, each imaging lens in micro- imaging lens array (2)
The visual field Φ of unit1It is identical with the size of phase reflection mirror unit in array phase speculum (5), and the aperture with interfering channel
In undercut construction；
The beam splitter (3) is made of for the light-duty beam splitter with grid rib structure grid rib, beam splitting window and beam splitting coating, the grid rib
Space is carried out to beam splitter to divide to form beam splitting window array, beam splitting coating is located at beam splitting window upper surface or the upper table of beam splitting window and grid rib
Face, grid rib play a supportive role to beam splitting coating；
Grid rib in aperture plate beam splitter is that its is longitudinally wide in lateral widthTimes, beam splitting window is that it is vertical in lateral width
To widthTimes, beam splitting window is identical in horizontal and vertical duty ratio；
Grid rib width range in the aperture plate beam splitter is 1nm-100cm, beam splitting window width ranging from 1nm-100cm；Grid rib
Thickness range is 1nm-100cm, and beam splitting window thickness range is 1nm-100cm；
The cross-section structure of grid rib in the aperture plate beam splitter is single side rectangle, single side parallelogram, single side are trapezoidal, two-sided square
Shape, two-sided parallelogram or two-sided ladder-shaped.
2. the infrared interferometer according to claim 1 based on array phase speculum and array of photoswitch, special
Sign is；The preparation of beam splitter is realized using ultraprecise machining process and MOEMS technologies；
Use ultraprecise machining process preparation process for：It is obtained in substrate by integrated cutting, grinding and polishing technology
Grid rib and beam splitting window, then whole vapor deposition beam splitting coating, complete device and prepare；
The preparation for realizing beam splitter using MOEMS technologies is realized by following steps：
Step 1: choosing monocrystalline silicon as substrate, and masking film is prepared in the monocrystalline silicon surface；
Step 2: orientation photoetching, removes the masking film in flash trimming slot figure by etching method, exposes side slot figure；Using monocrystalline silicon
Anisotropic etchant edge etching slot, side groove corrosion depth are equal to the final thickness of beam splitting window；
Step 3: second of photoetching, removes the masking film in beam splitting window figure by etching, exposes beam splitting window figure；Using list
Edge etching slot and beam splitting window, corrosion depth to side groove corrosion to thickness are 0 to crystal silicon anisotropic etchant simultaneously, and beam splitting window reaches
Final thickness；
Step 4: the masking film of removal grid edge surface, whole that beam splitting coating is deposited, the preparation of beam splitter is completed.
3. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that, the array phase speculum (5) is arranged for phase reflection mirror unit with different thickness according to certain thickness
Mode for cloth rearranges, and on the basis of (0,0) a phase reflection mirror unit, sets (1,0) a phase reflection mirror unit phase
Thickness for (0,0) a phase reflection mirror unit is h, then (m, n) a phase reflection mirror unit is a relative to (0,0)
The thickness of phase reflection mirror unit is (nN+m) h；The thickness of phase reflection mirror unit is incremented by successively by step-length of h along m directions, edge
N directions are incremented by successively by step-length of Nh；
As (the m of array phase speculum (5)0,n0) a phase reflection mirror unit is located at the (m of micro- imaging lens array (2)0,
n0) a imaging mirror unit image space focal plane on when, then the depth of focus Z of each imaging mirror unit of micro- imaging lens array meets Z >=max
{(n0N+m0)h,(N2-1-n0N-m0)h}。
4. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that,
The plane mirror (4) and array phase speculum (5) are in mirror position relative to beam splitter；
When plane mirror (4) is a relative to the mirror position of beam splitter (3) and (0,0) in array phase speculum (5)
When phase reflection mirror unit overlaps, the phase difference corresponding to (m, n) a interference channel is 4 π ν (nN+m) h；Work as plane mirror
(4) relative to (m in the mirror position of beam splitter (3) and array phase speculum (5)0,n0) a phase reflection mirror unit weight
During conjunction, the phase difference corresponding to (m, n) a interference channel is 4 π ν (nN+m-n0N-m0) wave of h, ν for the light wave of incident field
Number.
5. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that；Micro- imaging lens array (2) uses multiple telecentric beam path in image space structure, and micro- imaging lens array (2) is micro- by preceding group
Imaging lens array (2-1) organizes micro- imaging lens array (2-2) and diaphragm array (2-3) composition, and preceding group of micro- imaging lens array afterwards
Each micro- imaging mirror unit of (2-1) is organized after being located on the object space focal plane of the corresponding micro- imaging mirror unit of micro- imaging lens array (2-2),
The diaphragm array (2-3) is before each micro- imaging mirror unit of preceding group of micro- imaging lens array (2-1), the diaphragm array
(2-3) position is also the exit pupil position of collimating mirror (1).
6. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that；The relay imaging mirror (6) is using object space telecentric beam path structure, and the emergent pupil of relay imaging mirror (6) is wanted and face
The cold screen diaphragm of array detector (7) is mutually matched, i.e., the cold screen diaphragm (7-2) of planar array detector (7) is positioned at relay imaging mirror (6)
Image space focal plane on.
7. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that；The true field of relay imaging mirror (6) is set as Φ2, the true field Φ of the relay imaging mirror2With array phase
Relationship in position speculum (5) between the size a of phase reflection mirror unit and matrix number N is
8. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that；It sets in micro- imaging lens array (2) and is respectively imaged the image-side numerical aperture of mirror unit as NA1, relay imaging mirror (6)
Object-side numerical aperture is NA2, then the object-side numerical aperture of relay imaging mirror should meet relationship NA2=NA1。
9. the snapshot imaging spectrometer according to claim 1 based on micro- imaging lens array with array phase speculum,
It is characterized in that, the exit pupil position of the collimating mirror (1) is located on micro- imaging lens array (2), array phase speculum (5) position
In on the image space focal plane of micro- imaging lens array (2).
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| CN109738066A (en) * | 2019-02-18 | 2019-05-10 | 苏州大学 | A kind of micro- ladder reflecting mirror and preparation method thereof for static Fourier transform spectrometer |
| CN111006765A (en) * | 2019-12-27 | 2020-04-14 | 中国科学院西安光学精密机械研究所 | Compact snapshot type spectral imaging device and method based on micro-interference array |
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