CN108168704B - Infrared polarization interference imaging spectrometer based on double-period step phase reflector - Google Patents
Infrared polarization interference imaging spectrometer based on double-period step phase reflector Download PDFInfo
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/45—Interferometric spectrometry
- G01J3/453—Interferometric spectrometry by correlation of the amplitudes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/447—Polarisation spectrometry
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
Abstract
The invention relates to an infrared polarization interference imaging spectrometer based on a double-period step phase reflector, which relates to the technical field of infrared polarization imaging spectrum measuring instruments and solves the problems of simultaneous acquisition of polarization information, image information and spectrum information and microminiaturization and integration of a polarization imaging spectrum instrument in the existing target scene High integration level, high measuring speed, large information quantity and the like.
Description
Technical Field
The invention relates to the technical field of infrared polarization imaging spectrum measuring instruments, in particular to an infrared polarization imaging spectrum instrument, and specifically relates to a microminiature infrared polarization interference imaging spectrometer which utilizes a four-channel polarizer, a four-channel imaging mirror and a double-period stepped phase reflector to perform polarization modulation, array imaging and distributed phase modulation on a light field so as to realize polarization image field interference.
background
the image characteristics, the spectrum characteristics and the polarization characteristics are important means for identifying substances by people, and the effective detection of the target images, the spectrum characteristics and the polarization characteristics greatly improves the ability of people to know the world. Image feature detection is used for recording position and intensity information of an object, spectral feature detection can acquire information related to wavelength according to emission, reflection and transmission spectrums specific to different substances, and polarization feature detection can acquire polarization information closely related to characteristics such as surface structure and surface roughness of the object. With the development of science and engineering technology, modern measuring instruments tend to develop polarization, spectrum and image three-in-one multi-mode detection capability, namely, polarization, spectrum and image measurement functions are integrated on one instrument, and polarization, spectrum and image information of the same target is simultaneously detected, so that target attributes are evaluated comprehensively, a more powerful means is provided for people to correctly recognize the substance world, and meanwhile, the system structure is simplified on the basis of enriching target information, and the system stability is improved. The polarization imaging spectrum technology has extremely important use value in the fields of space detection, atmospheric remote sensing, earth remote sensing, machine vision, biomedicine and the like, so the polarization imaging spectrum instrument combining the polarization map measuring function has very wide application prospect.
Because the image information is two-dimensional position light intensity information, the spectrum information is one-dimensional wavelength power spectrum information, and the polarization information is expressed as four-dimensional information by a stokes vector, the polarization imaging spectrometer needs to acquire data information with multiple dimensions. However, the detector is a two-dimensional measuring device, and how to acquire target information of multiple dimensions by using the two-dimensional detecting device is a problem to be specifically solved in the field of polarization imaging spectrum detection technology and instruments at present. At present, infrared polarization imaging spectrometers commonly used in infrared polarization imaging spectrum detection technology adopt a polaroid inserted in a scanning type infrared imaging spectrometer, and spectrum data of different polarization states of a target scene is obtained through rotation of the polaroid. Because the infrared imaging spectrometer comprises a spectrum scanning mechanism, the spectrum is required to be scanned once in each polarization state, the polarization plate rotates to the next polarization state after one spectrum scanning is completed, and then the spectrum scanning of the next polarization state is performed. The two motion mechanisms of spectrum scanning and polaroid rotation not only increase the volume and the weight of the system, but also increase the time for acquiring system data.
disclosure of Invention
The invention provides an infrared polarization interference imaging spectrometer based on a double-period step phase reflector, which aims to solve the problems of simultaneous acquisition of polarization information, image information and spectral information in the existing target scene and microminiaturization and integration of a polarization imaging spectrometer.
The infrared polarization interference imaging spectrometer based on the double-period stepped phase reflector comprises a collimating mirror, a four-channel polarizer, a four-channel imaging mirror, a beam splitter, a plane reflector, a double-period stepped phase reflector, a relay imaging mirror and a planar array detector, wherein an incident light field carrying target polarization map information is collimated into a parallel light field through the collimating mirror, the parallel light field is divided into four polarization states through the four-channel polarizer, and a polarization image field array is formed on an image side focal plane of the four-channel imaging mirror;
The beam splitter equally divides the intensity of the polarized image field array and then respectively projects the polarized image field array onto the plane reflector and the double-period step phase reflector to form two coherent polarized image field arrays; the double-period step phase reflector performs space distributed phase modulation on each polarized image field unit in the polarized image field array, and the relay imaging mirror transmits the modulated polarized image field to the area array detector to be superposed and interfered with the polarized light field reflected by the plane reflector;
Each polarization channel of the four-channel polarizer corresponds to one polarization state of the emergent light field; the four-channel imaging mirror forms four imaging channels for the transverse space; each imaging channel corresponds to one polarization channel, so that each imaging channel corresponds to one polarization image field; and the image space view field of each imaging channel corresponds to one quadrant of the double-period step phase reflector, the phases of different polarization image field units are subjected to distributed modulation in different areas of the double-period step phase reflector, and a polarization interference image array with four different polarization states and spatial phase difference distribution in each polarization state is obtained on the image surface of the area array detector.
The invention has the beneficial effects that: the invention provides an infrared polarization interference imaging spectrometer based on a double-period step phase reflector, which is a polarization imaging spectrometer which utilizes a four-channel polarizer to perform spatial polarization modulation on an incident light field, utilizes a four-channel imaging mirror to perform array imaging on the four-channel polarized light field, and utilizes a double-period step phase reflector to perform spatial phase modulation on an imaging light field of each polarization channel.
drawings
FIG. 1 is a schematic diagram of an infrared polarization interference imaging spectrometer based on a dual-period step phase reflector according to the present invention;
FIG. 2 is a schematic diagram of optical matching between an imaging field of a four-channel imaging mirror and a bi-periodic step phase reflector in the infrared polarization interference imaging spectrometer based on the bi-periodic step phase reflector according to the present invention;
FIG. 3 is a schematic diagram of polarization modulation of a light field by a four-channel polarizer in the infrared polarization interference imaging spectrometer based on the dual-period step phase mirror according to the present invention;
FIG. 4 is a schematic diagram of phase modulation of a bi-periodic stepped phase reflector on four polarization image fields in an infrared polarization interference imaging spectrometer based on the bi-periodic stepped phase reflector according to the present invention;
FIG. 5 is a schematic structural diagram of a bi-periodic stepped phase reflector in an infrared polarization interference imaging spectrometer based on the bi-periodic stepped phase reflector according to the present invention;
FIG. 6 is a schematic diagram of telecentric imaging at a four-channel imaging mirror image side in an infrared polarization interference imaging spectrometer based on a bi-periodic step phase reflector according to the present invention;
FIG. 7 is a schematic view of telecentric imaging at the object space of a relay imaging mirror in the infrared polarization interference imaging spectrometer based on the bi-periodic step phase reflector according to the present invention;
FIG. 8 is a schematic diagram of a four-channel polarization interference image in the infrared polarization interference imaging spectrometer based on the dual-period step phase reflector according to the present invention;
FIG. 9 is a top view of a grid beam splitter structure;
FIG. 10 is a schematic diagram of horizontal and vertical grating edge structures of ten grating beam splitters, wherein FIG. 10a, FIG. 10c, FIG. 10e, FIG. 10g, FIG. 10i, FIG. 10k, FIG. 10m, FIG. 10o, FIG. 10q and FIG. 10s at the left part are front sectional views of ten grating beam splitters; fig. 10b, 10d, 10f, 10h, 10j, 10l, 10n, 10p, 10r and 10t on the right side are left side sectional views of the corresponding main sectional views, respectively;
FIG. 11a to FIG. 11f are schematic cross-sectional views of a double-sided grating edge in FIG. 11;
FIG. 12 is a schematic diagram of a four-channel mesh pellicle beam splitter manufacturing process;
FIG. 13 is a schematic diagram of a process for forming a bi-periodic stepped phase mirror by multiple film deposition;
FIG. 14 is a schematic diagram of a process for forming a bi-periodic stepped phase reflector by multiple etching;
FIG. 15 is a schematic diagram of a process for forming a dual-period stepped phase mirror by a hybrid method of etching first and then coating.
Detailed Description
First embodiment, the first embodiment is described with reference to fig. 1 to 15, and an infrared polarization interference imaging spectrometer based on a dual-period step phase mirror includes a collimator lens 1, a four-channel polarizer 2, a four-channel imaging mirror 3, a beam splitter 4, a plane mirror 5, a dual-period step phase mirror 6, a relay imaging mirror 7, and an area array detector 8.
the collimating mirror 1 collimates the incident light carrying the target image, the spectrum and the polarization information into parallel light, the four-channel polarizer 2 divides the parallel light field into four parallel polarization channels in the transverse space according to different polarization states, and thus the target light field is modulated into four different polarization states after passing through the four-channel polarizer 2. The outgoing light field modulated by the four-channel polarizer 2 may be four linear polarization states with different polarization directions, or may be a combination of the linear polarization state and the circular polarization state.
the four light fields with different polarization states form a polarization image field array arranged in a 2 x 2 mode on an image space focal plane of the four light fields through the four-channel imaging mirror 3, and each polarization image field unit corresponds to one polarization state of the light field. The beam splitter 4 equally divides the intensity of the polarized image field array and then respectively projects the polarized image field array onto the plane mirror 5 and the double-period step phase mirror 6, so that the polarized image field array is divided into two coherent polarized image field arrays relative to the beam splitter. The polarized image field array incident on the bi-periodic stepped phase reflector 6 is modulated by the bi-periodic stepped phase reflector 6 in a phase quantity in a spatial distribution form, returns to the beam splitter 4, and is coherently superposed with the polarized light field array reflected by the planar reflector 5 on the area array detector 9 through the relay imaging mirror 8 to form a polarized interference image array arranged in a 2 x 2 mode.
the double-period stepped phase reflector 6 introduces phase modulation amount in a spatial distribution form to each polarized image field unit of the four polarized channels, and the phase modulation amount of the coherent image fields corresponding to the four polarized channels has the same distribution form by reasonably designing the structure of the double-period stepped phase reflector, so that after the phase modulation amount is coherently superposed with the polarized image fields reflected by the plane reflector, the four polarized interference image units of the formed polarized interference image array carry the same phase difference distribution information, and the integrated detection of the polarized information, the interference information and the imaging information is realized. By scanning a target scene, the step view field of each scanning corresponds to the distance of one step width on the double-period step phase reflector, so that an interference image data cube corresponding to four polarization states is obtained. And carrying out polarization shearing, interference shearing, image splicing, interference splicing, spectrum restoration and polarization calculation on the polarization interference image data cube to obtain the image information, the spectrum information and the Stokes polarization information of the target scene.
The present embodiment is described with reference to fig. 2, and each polarization channel of the four-channel polarizer 2 described in the present embodiment corresponds to each imaging channel of the four-channel imaging mirror 3 one by one, so as to form a four-channel polarization imaging system. The image-wise field of view of each imaging channel of the four-channel imaging mirror 3 corresponds to a quarter of the area on the bi-periodic stepped phase mirror 6, so that each polarization channel ultimately corresponds to a sequence of interference images on the detector. The image space field of view of each imaging channel of the four-channel imaging mirror 3 is a circular field of view, set to Φ1The double-period stepped phase reflector 6 is a square aperture and set to be DxD, and in order to realize optical matching of the field of view between the four-channel imaging mirror 3 and the double-period stepped phase reflector 6, a four-channel tangential connection structure is formed between the circular imaging field of view corresponding to the four-channel imaging mirror 3 and the square aperture of the double-period stepped phase reflector 6. Each circular image space view field 9 of the four-channel imaging mirror is tangent to two central lines of the double-period stepped phase reflector 6 and is connected with a corresponding corner point of the double-period stepped phase reflector 6. Thus, each circular image-side field of view Φ of a four-channel imaging mirror1The relation between the length D of the side of the double-period step phase reflector isin order to ensure that the four imaging channels have the same image space field of view on the bi-periodic stepped phase mirror, the effective field of view 10 of the effective interference area of each imaging channel on the bi-periodic stepped phase mirror isThat is, the effective area of the bi-periodic step phase reflector corresponding to each imaging channel isMeanwhile, in order to realize the matching of the optical field of view of the relay imaging mirror 7 and the double-period step phase reflector 6, the object field of view 11 of the relay imaging mirror 7 is set to phi2object field of view phi of relay imaging mirror2The relation between the length D of the side of the double-period step phase reflector is
The present embodiment is described with reference to fig. 3, the four-channel polarizer 2 described in the present embodiment modulates the polarization state of an incident light field, and the four-channel polarizer 2 may be four linear polarizer arrays with different polarization directions, or may be a combined structure of a linear polarizer and a wave plate. The linear polaroid adopts infrared transmission materials such as zinc selenide (ZnSe), zinc sulfide (ZnS), silicon (Si), silver chloride (AgCl), polyethylene and the like, and the modulation of the polarization state of incident light is realized by copying or scribing grooves on the surface of the material and evaporating dense parallel metal wires made of aluminum (Al), gold (Au) or chromium (Cr). The flatness of two surfaces of the linear polaroid is required to be less than or equal to lambda/20, the surface roughness is required to be less than or equal to 3nm, and lambda is the wavelength. When the four-channel polarizer 2 employs the linear polarizer arrays with the polarization directions of 0 °, 45 °, 90 ° and 135 ° respectively, the incident light field is transmitted by the four-channel polarizer to obtain the emergent light field with the linear polarization states of 0 °, 45 °, 90 ° and 135 °. When the wave plate array is added behind the four linear polarizer arrays, an emergent light field in a circular polarization state can be obtained. FIG. 3a shows the polarization states corresponding to the emergent light field are 0-1 linear polarization state, 2-2 linear polarization state with 45 °, 2-3 linear polarization state with 90 ° and 2-4 linear polarization state with 135 ° when the four-channel polarizer employs the linear polarizer array with four polarization directions of 0 °, 45 °, 90 ° and 135 °. Fig. 3b shows four polarization states corresponding to the outgoing light field when the four-channel polarizer adopts a combined structure of a polarizer array and a wave plate, wherein the polarization directions of the linear polarizer array are respectively 0 °, 60 °, 120 ° and 45 °, and a quarter-wave plate is disposed behind the 45 ° polarizer, so that the polarization states corresponding to the outgoing light field are 0 ° linear polarization state 2-1, 60 ° linear polarization state 2-5, 120 ° linear polarization state 2-6 and circular polarization state 2-7.
The plane mirror 5 and the bi-periodic stepped phase mirror 6 according to the present embodiment are mirror images of the beam splitter 4.
referring to fig. 4, the first period of the dual-period step phase mirror 6 performs distributed modulation on the phases of two polarization channel image fields in the four-channel polarization image field, and the second period of the dual-period step phase mirror 6 performs distributed modulation on the phases of the other two polarization channel image fields in the four-channel polarization image field. When the four polarization channels correspond to four linear polarization states of 0 degrees, 45 degrees, 90 degrees and 135 degrees respectively, the first period 6-1 of the double-period stepped phase reflector 6 performs distributed modulation on the phases of two linear polarization channel image fields of 0 degrees and 135 degrees, and the second period 6-2 of the double-period stepped phase reflector 6 performs distributed modulation on the phases of two linear polarization channel image fields of 45 degrees and 90 degrees, so that the imaging light fields of the four polarization channels are subjected to interference modulation.
The present embodiment is described with reference to fig. 5, and the step height h and the step number N of the bi-periodic step phase mirror described in the present embodiment determine the phase difference modulation sequence of the two coherent light beams divided by the beam splitter. In order to ensure that imaging light fields of four polarization channels have the same phase difference modulation sequence, two periods of the double-period step phase reflector have the same step height and step series. The length of the side of the dual-period step phase mirror is D, each period of the dual-period step phase mirror occupies half of the total size of the dual-period step phase mirror, but the effective interference areas 6-3 and 6-4 of each period areAnd the center distance between two periods isEach period is a stepped structure with step heights h gradually increased, so that the phase modulation sequences with the same distribution are generated for an incident light field. In order to achieve efficient sampling of the interferogram, the step height h is required to be ≦ λ/4. When the lowest steps of the plane mirror 5 and the double-period step phase mirror 6 are overlapped relative to the mirror image of the beam splitter, the wave number of the optical wave signal is set as v, and the corresponding phase difference between two adjacent steps in each period of the double-period step phase mirror is set as veach period of the bi-periodic stepped phase mirror is coupled to the incident lightField formationSuch that the interference images of the four polarization channels correspond to the same phase difference sequence.
The present embodiment is described with reference to fig. 6, and the four-channel imaging mirror 3 according to the present embodiment forms images of four polarization channels into different quadrants of the double periodic stepped phase mirror 6, thereby obtaining a 2 × 2 polarization image array. The four-channel imaging mirror works in an infrared band and is made of infrared optical materials such as silicon, germanium, zinc selenide, zinc sulfide and the like. In order to prevent crosstalk of light fields between different polarization channels, each imaging channel of the four-channel imaging mirror 3 adopts an image-side telecentric optical path structure. The four-channel imaging mirror 3 is composed of a front imaging mirror array 3-1, a rear imaging mirror array 3-2 and a diaphragm array 3-3, wherein the object focal plane of each imaging mirror unit in the rear imaging mirror array 3-2 is positioned on the imaging mirror unit corresponding to the front imaging mirror array 3-1, each diaphragm unit of the diaphragm array 3-3 is positioned in front of each imaging mirror unit of the front imaging mirror array 3-1, and a polarizer unit is embedded in each diaphragm unit of the diaphragm array 3-3. Therefore, the position of the diaphragm array 3-3 is the position of the four-channel polarizer 2 and the exit pupil position of the collimating mirror 1, so that the four-channel imaging mirror and the pupil of the collimating mirror are connected. Thus, the target object 12, passing through the collimator lens 1, the four-channel polarizer 2 and the four-channel imaging mirror, forms a polarized image array 13 on its image focal plane, and the chief ray of the imaging beam of each polarized image unit is perpendicular to the respective reflection surfaces of the bi-periodic step phase mirror.
The present embodiment is described with reference to fig. 7, and the relay imaging mirror 7 according to the present embodiment superimposes the four-channel imaging mirror 3 into two 2 × 2 polarization image arrays on the plane mirror 5 and the bi-periodic stepped phase mirror 6 onto the infrared area array detector 8 to form a polarization interference image array. The relay imaging lens works in an infrared band and is made of infrared optical materials such as silicon, germanium, zinc selenide, zinc sulfide and the like. The infrared area array detector 8 is composed of an infrared focal plane array 8-1 and a cold screen diaphragm 8-2, the infrared focal plane array 8-1 adopts indium antimonide (I)nSb) or mercury cadmium telluride (HgCdTe) material. The relay imaging lens 7 adopts an object space telecentric light path structure, the numerical aperture matching with the four-channel imaging lens 3 needs to be realized, and meanwhile, the exit pupil of the relay imaging lens 7 needs to be matched with the cold screen diaphragm of the infrared area array detector 8. The exit pupil of the relay imaging mirror 7 is arranged on the image focal plane, the cold screen diaphragm 8-2 of the infrared area array detector is overlapped with the image focal plane of the relay imaging mirror, the object image relationship between the double-period step phase reflector and the focal plane array of the infrared area array detector is ensured, and then the matching of the exit pupil of the relay imaging system and the cold screen diaphragm is realized, so that the principal rays of the incident beams from the two polarized image field arrays are parallel to the optical axis, and finally, the interference imaging is carried out on the focal plane array of the infrared area array detector. Let the image-side numerical aperture of the four-channel imaging mirror 3 be NA1The numerical aperture of the relay imaging mirror 7 on the object side is NA2The numerical aperture should match satisfy the relation NA2＝NA1. Thus, two 2 × 2 polarization image arrays 13 on the plane mirror 5 and the bi-periodic step phase mirror 6 are superimposed on the focal plane array of the area array detector 8 via the relay imaging mirror 7 to form a polarization interference image array 14.
the present embodiment will be described with reference to fig. 8, and the area array detector 8 according to the present embodiment is used for receiving a polarization interference image array. The polarization interference image array is composed of four polarization interference image units, and each polarization interference image unit corresponds to one polarization state of the light field. When the four polarization channels respectively adopt polarizers with four polarization directions of 0 degrees, 45 degrees, 90 degrees and 135 degrees, the polarization interference image unit 14-1 corresponds to a polarization state interference image of 0 degrees, the polarization interference image unit 14-2 corresponds to a polarization state interference image of 45 degrees, the polarization interference image unit 14-3 corresponds to a polarization state interference image of 90 degrees, and the polarization interference image unit 14-4 corresponds to a polarization state interference image of 135 degrees. The image gray scale of each polarization interference image unit is subjected to spatial distributed phase modulation of the double-period step phase reflector, so that each polarization interference image unit is a modulation image formed by modulating a light intensity image by interference fringes.
In this embodiment, the beam splitter 3 is in the infrared bandThe beam splitting plate adopts infrared optical materials such as zinc selenide (ZnSe), potassium bromide (KBr) or cesium iodide (CsI) as substrate materials, or semiconductor materials such as undoped silicon (Si), germanium (Ge) and gallium arsenide (GaAs) as substrate materials; the compensating plate is made of the same base material as the beam splitting plate. The flatness requirement of the two surfaces of the beam splitting plate and the compensation plate is less than or equal to lambda/20, and the surface roughness requirement is less than or equal to 3 nm. For a substrate with high refractive index, the first surface is not required to be plated with a beam splitting film, and only the second surface is required to be plated with an antireflection film. For a low index substrate, it is only necessary to deposit a broadband beam splitting film on the first surface of the substrate to have a reflectivity close to 0.5. For the substrate with the middle refractive index, both the beam splitting film and the antireflection film need to be plated. When a silicon material with a high refractive index is used as the substrate of the semiconductor beam splitter, the silicon substrate material corresponds to a refractive index of 3.4, and the plating material may be selected from germanium and polyethylene or polypropylene. The difference in light intensity reflectivity for different polarization directions can be reduced by reducing the angle of incidence of the beam on the beam splitter. By dimension D of the bi-periodic step phase reflector, and the beam splitting plate and the compensation plate are placed at 45 degrees with respect to the optical axis direction, the beam splitting plate and the compensation plate are sized to
In the embodiments described with reference to fig. 9 to 11, the beam splitter may also be a four-channel mesh pellicle beam splitter, which uses a four-channel mesh structure to support the pellicle. Because the beam splitting film is too thin to be self-supporting, the beam splitting film is supported by adopting a four-channel grid structure. The four-channel grid structure is made of semiconductor materials, and the beam splitting film is made of polyester films. The four-channel grid structure needs to be matched with the structure of the semi-step semi-plane phase reflector. The four-channel grid film beam splitter is arranged at an angle of 45 degrees with the optical axis of the system, and the size of each channel of the four-channel grid film beam splitter is equal to that of each channel of the four-channel grid film beam splitter according to the geometric parameters of the semi-step semi-plane phase reflectorThe grid structure of the four-channel grid film beam splitter consists of grid edges 3-1 and beam splitting windows 3-2, wherein the width of the window edges in the transverse direction is the width of the window edges in the longitudinal directionthe width of the window in the transverse direction being greater than that in the longitudinal directionThe window has the same duty cycle in the lateral and longitudinal directions. Since the size of the window determines the luminous flux of the system, the area of the window is much larger than the area of the window rib. The projection of each window onto the two half-step half-plane phase mirrors should cover the effective field of view area on each half-step half-plane phase mirror corresponding to each imaging channel. Therefore, the size of each window of the four-channel grid pellicle beam splitter should be equal to or greater than
In the present embodiment, the four-channel mesh pellicle beam splitter is first fabricated by referring to fig. 12. The four-channel grid structure is manufactured by adopting a micro-optical-electro-mechanical-system (MOEMS) process, non-doped semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like are selected as a substrate, a layer of photoresist is firstly spin-coated on the semiconductor substrate material, then a mask plate with four-channel grid patterns is placed on the substrate on which the photoresist is spin-coated, the photoresist at the position of a window is removed through exposure and development, and the surface of the semiconductor substrate at the position of the window is exposed, as shown in figure 12 a. And then, removing the semiconductor substrate material at the position of the window by adopting a wet etching or dry etching technology to form a hollow structure, as shown in fig. 12 b. Finally, the photoresist at the position of the window edge is removed, so as to form a four-channel grid structure, as shown in fig. 12 c. Fixing the polyester film on the four-channel grid structure, supporting the polyester film by using the window edges, splitting the polyester film by using the window, and finally finishing the manufacture of the four-channel grid film beam splitter, as shown in fig. 12 d.
The present embodiment, a bi-periodic stage, is described with reference to FIG. 13the gradient phase reflector can be made of glass or quartz (SiO)2) The double-period step phase reflector structure is formed on a substrate made of materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like by a method of film layer deposition for multiple times. Firstly, glass and quartz (SiO)2) A layer of photoresist is spin-coated on a substrate made of materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like as shown in fig. 13a, the photoresist with a certain width is removed in each period through masking, exposure and development, the surface of the substrate with a certain width is exposed as shown in fig. 13b, then a film layer with a certain thickness is evaporated by using a coating process such as electron beam evaporation or magnetron sputtering and the like as shown in fig. 13c, the photoresist and the film layer on the mask portion are removed, and two step structures are formed in each period as shown in fig. 13 d. Then, the structure is again subjected to glue spreading, masking, exposure and development, a surface with a certain width is exposed on each step, as shown in fig. 13e, and then film deposition is performed again by using a film coating process such as electron beam evaporation or magnetron sputtering, wherein the film thickness is half of that of the last film coating, as shown in fig. 13 f. Finally, the photoresist and the film layer of the mask part are removed, and four step structures are formed in each period, as shown in fig. 13 g. The process is circulated, and the thickness of each film layer is half of that of the last film layer, so that the required double-period step phase reflector structure can be obtained.
in the present embodiment, the dual-period step phase mirror may be formed on a substrate made of a semiconductor material such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), or the like, by performing multiple etching processes; firstly, a layer of photoresist is coated on a substrate made of semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like in a spinning mode, as shown in fig. 14a, through masking, exposure and development, the photoresist with a certain width is removed in each period, the surface of the substrate with a certain width is exposed, as shown in fig. 14b, then wet etching or dry etching is adopted to etch the exposed surface of the substrate with a certain depth, as shown in fig. 14c, the photoresist on the mask portion is removed, and two step structures are formed in each period, as shown in fig. 14 d. Then, the structure is coated with glue, masked, exposed and developed again, the substrate surface with a certain width is exposed on each step, as shown in fig. 14e, and then the exposed substrate surface is etched by a certain depth again by adopting a wet etching or dry etching process, wherein the etching depth is half of the previous etching depth, as shown in fig. 14 f. Finally, the photoresist on the mask part is removed, and four step structures are formed in each period, as shown in fig. 14 g. The process is circulated, and the etching depth of each time is half of the etching depth of the last time, so that the required double-period step phase reflector structure can be obtained.
Referring to fig. 15, the dual-period step phase mirror structure of the present embodiment is formed by a hybrid method of etching first and then coating a film on a substrate made of semiconductor materials such as silicon (Si), germanium (Ge), and gallium arsenide (GaAs); firstly, a layer of photoresist is coated on a substrate made of semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like in a spinning mode, as shown in fig. 15a, through masking, exposure and development, the photoresist with a certain width is removed in each period, the surface of the substrate with a certain width is exposed, as shown in fig. 15b, then wet etching or dry etching is adopted to etch the exposed surface of the substrate with a certain depth, as shown in fig. 15c, the photoresist on the mask portion is removed, and two step structures are formed in each period, as shown in fig. 15 d. Then, the structure is subjected to glue spreading, masking, exposure and development again, a surface with a certain width is exposed on each step, as shown in fig. 15e, and then a film layer is deposited by a film coating process such as electron beam evaporation or magnetron sputtering, wherein the thickness of the film layer is half of the last etching depth, as shown in fig. 15 f. Finally, the photoresist and the film layer of the mask part are removed, and four step structures are formed in each period, as shown in fig. 15 g. In the actual operation process, a certain number of steps are formed by the cyclic etching process, and the film coating process is recycled, so that the required double-period step phase reflector structure can be finally obtained.
After the dual-period step phase reflector structure is manufactured, a reflecting film layer made of high-reflectivity materials such as gold (Au), aluminum (Al) and the like is evaporated on the surface of the dual-period step structure, and finally the dual-period step phase reflector is formed. The planeness requirement of each step unit of the double-period step phase reflector 6 is less than or equal to lambda/20, and the surface roughness requirement is less than or equal to 3 nm.
it should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications of the basic elements of a bicychc ladder phase mirror based infrared polarization interference imaging spectrometer based on the above description may be made without departing from the scope of the present disclosure, as long as the function is not changed, and it is not necessary or exhaustive for all embodiments to be considered. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (6)
1. The infrared polarization interference imaging spectrometer based on the double-period stepped phase reflector comprises a collimating mirror (1), a four-channel polarizer (2), a four-channel imaging mirror (3), a beam splitter (4), a plane reflector (5), a double-period stepped phase reflector (6), a relay imaging mirror (7) and an array detector (8), and is characterized in that;
An incident light field carrying target polarization map information is collimated into a parallel light field through a collimating mirror (1), the parallel light field is divided into four polarization states through a four-channel polarizer (2), and a polarization image field array is formed on an image space focal plane of a four-channel imaging mirror (3);
The beam splitter (4) equally divides the intensity of the polarized image field array and then respectively projects the polarized image field array onto the plane reflector (5) and the double-period step phase reflector (6) to form two coherent polarized image field arrays; each polarized image field unit in the polarized image field array is subjected to phase modulation by the double-period stepped phase reflector (6), returns to the beam splitter, and is subjected to superposition imaging with the polarized light field reflected by the plane reflector (5) on the area array detector (8) through the relay imaging mirror (7);
it is characterized in that;
Each polarization channel of the four-channel polarizer (3) corresponds to each imaging channel of the four-channel imaging mirror (4) one by one, and each polarization channel corresponds to one polarization state of an emergent light field; the four-channel imaging mirror (4) forms four imaging channels for the transverse space; each imaging channel corresponds to one polarization channel, so that each imaging channel corresponds to one polarization image field; the image space view field of each imaging channel corresponds to one quadrant of the double-period step phase reflector, different polarization image field units are modulated by different areas of the double-period step phase reflector, and an image surface of an area array detector (8) obtains a polarization interference image array which has four different polarization states and phase difference spatial distribution form of each polarization state;
The circular view field arrays of four imaging mirror channels of the four-channel imaging mirror (4) are in a four-channel tangent connection structure with the square apertures corresponding to the double-period stepped phase reflector, namely, each circular imaging view field of the four-channel imaging mirror is respectively tangent to two central lines of the double-period stepped phase reflector and is connected with the angular point of the double-period stepped phase reflector;
The beam splitter (3) is a light beam splitter with a grid edge structure and comprises grid edges, beam splitting windows and beam splitting films, the grid edges divide the beam splitter spatially to form a beam splitting window array, the beam splitting films are positioned on the upper surfaces of the beam splitting windows or the upper surfaces of the beam splitting windows and the grid edges, and the grid edges support the beam splitting films;
the width of the grid edges in the grid beam splitter in the transverse direction being that of the grid edges in the longitudinal directionThe width of the beam-splitting window in the transverse direction being greater than that in the longitudinal directionThe duty ratios of the beam splitting windows in the transverse direction and the longitudinal direction are the same;
The width range of the grid edge in the grid mesh beam splitter is 1nm-100cm, and the width range of the beam splitting window is 1nm-100 cm; the thickness range of the grid edges is 1nm-100cm, and the thickness range of the beam splitting window is 1nm-100 cm;
the cross section structure of the grid edges in the grid mesh beam splitter is a single-sided rectangle, a single-sided parallelogram, a single-sided trapezoid, a double-sided rectangle, a double-sided parallelogram or a double-sided trapezoid;
The beam splitter is manufactured by adopting an ultra-precise machining method and an MOEMS technology;
The preparation process by adopting the ultra-precise machining method comprises the following steps: obtaining grid edges and beam splitting windows on a substrate through an integrated cutting, grinding and polishing technology, and then integrally evaporating and plating a beam splitting film to finish the preparation of a device;
The preparation of the beam splitter by adopting the MOEMS technology is realized by the following steps:
step one, monocrystalline silicon is selected as a substrate, and a masking film is prepared on the surface of the monocrystalline silicon;
Step two, directional photoetching is carried out, the masking film in the side groove graph is removed through an etching method, and the side groove graph is exposed; etching the side groove by using the monocrystalline silicon anisotropic etching solution, wherein the etching depth of the side groove is equal to the final thickness of the beam splitting window;
step three, carrying out second photoetching, removing the masking film in the beam splitting window graph through etching, and exposing the beam splitting window graph; adopting monocrystalline silicon anisotropic etching liquid to etch the side groove and the beam splitting window simultaneously, wherein the etching depth is up to the etching thickness of the side groove being 0, and the beam splitting window reaches the final thickness;
Removing the masking film on the surface of the grid edge, and integrally evaporating a beam splitting film to complete the preparation of the beam splitter;
when the lowest steps of the plane reflector (5) and the double-period step phase reflector (6) are overlapped in a mirror image mode relative to the beam splitter (4), the corresponding phase difference between every two adjacent steps of each period of the double-period step phase reflector isEach period of the bi-periodic stepped phase mirror will formV is the wave number of the optical wave.
2. The dual-period stepped phase mirror-based infrared polarization interference imaging spectrometer according to claim 1, characterized in that the dual-period stepped phase mirror (6) has a first period for distributed phase modulation of the image fields of two polarization channels of the four-channel polarization image field and another period for distributed phase modulation of the image fields of the other two polarization channels of the four-channel polarization image field.
3. The dual-period stepped-phase-reflector-based infrared polarization interference imaging spectrometer according to claim 1, characterized in that each circular image-side field of view Φ of the four-channel imaging mirror (4)1the relation between the length D of the side of the double-period step phase reflector isthe effective field of view of the effective interference region of each imaging channel on the bi-periodic stepped phase mirror isThat is, the effective area of the bi-periodic step phase reflector corresponding to each imaging channel is
4. The dual-period stepped-phase-mirror-based infrared polarization interference imaging spectrometer of claim 1,
Each period of the double-period step phase reflector (6) occupies half of the total size of the reflector, and the center distance between the two periods iseach period is a step structure with step height h gradually increased, phase modulation sequences with the same distribution are generated for an incident light field, and the step height h is less than or equal to lambda/4; the planeness of each step unit is less than or equal to lambda/20, and the surface roughness is less than or equal to 3 nm.
5. The infrared polarization interference imaging spectrometer based on the bicycle step phase reflector, according to the claim 1, characterized in that the four-channel imaging mirror (3) adopts an image space telecentric optical path structure, the four-channel imaging mirror is composed of a front component imaging mirror array (3-1), a rear component imaging mirror array (3-2) and a diaphragm array (3-3), and each micro imaging mirror unit of the front component imaging mirror array is located on the object space focal plane of the imaging mirror unit corresponding to the rear component imaging mirror array, the diaphragm array (3-3) is located in front of each micro imaging mirror unit of the front component imaging mirror array (3-1), and a polarizer unit is embedded in each diaphragm unit of the diaphragm array (3-3),
the position of the diaphragm array (3-3) is the position of the four-channel polarizer (2) and is the exit pupil position of the collimating mirror (1), and the four-channel imaging mirror (3) is connected with the pupil of the collimating mirror (1).
6. The infrared polarization interference imaging spectrometer based on the bi-periodic stepped phase reflector as claimed in claim 1, characterized in that the relay imaging mirror (7) adopts an object space telecentric optical path structure, the relay imaging mirror (6) is matched with a cold screen diaphragm of the area array detector (8), i.e. the cold screen diaphragm of the area array detector (8) is located on an image space focal plane of the relay imaging mirror, the relay imaging mirror (7) and the four-channel imaging mirror (3) realize the matching of numerical apertures, and the image space numerical aperture of the four-channel imaging mirror (3) is set as NA1the numerical aperture of the object space of the relay imaging mirror (7) is NA2the numerical aperture should match satisfy the relation NA2＝NA1。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871815A (en) * | 2009-04-24 | 2010-10-27 | 中国科学院西安光学精密机械研究所 | Programmable polarization hyperspectral imager based on aperture segmentation and acoustic-optic tunable filter |
| CN103913227A (en) * | 2014-03-10 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Infrared imaging spectrometer based on light beam splitter and manufacturing method |
| CN104006885A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatio-temporal union modulation Fourier-transformation imaging spectrometer and manufacturing method |
| CN104006881A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatial modulation Fourier transform infrared spectrometer based on grid beam splitter |
-
2017
- 2017-12-20 CN CN201711380877.8A patent/CN108168704B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871815A (en) * | 2009-04-24 | 2010-10-27 | 中国科学院西安光学精密机械研究所 | Programmable polarization hyperspectral imager based on aperture segmentation and acoustic-optic tunable filter |
| CN103913227A (en) * | 2014-03-10 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Infrared imaging spectrometer based on light beam splitter and manufacturing method |
| CN104006885A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatio-temporal union modulation Fourier-transformation imaging spectrometer and manufacturing method |
| CN104006881A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatial modulation Fourier transform infrared spectrometer based on grid beam splitter |
Non-Patent Citations (1)
| Title |
|---|
| 微小型傅里叶变换光谱仪光场分析与衍射抑制;吕金光 等;《光学学报》;20161130;第36卷(第11期);全文 * |
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