CN108120504B - Interference spectrometer based on optical switch array and manufacturing method - Google Patents
Interference spectrometer based on optical switch array and manufacturing method Download PDFInfo
- Publication number
- CN108120504B CN108120504B CN201711380932.3A CN201711380932A CN108120504B CN 108120504 B CN108120504 B CN 108120504B CN 201711380932 A CN201711380932 A CN 201711380932A CN 108120504 B CN108120504 B CN 108120504B
- Authority
- CN
- China
- Prior art keywords
- array
- reflector
- step phase
- optical switch
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 209
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000005530 etching Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 36
- 230000000873 masking effect Effects 0.000 claims description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 10
- 238000005070 sampling Methods 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000010354 integration Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000007514 turning Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000002329 infrared spectrum Methods 0.000 abstract description 4
- 230000001427 coherent effect Effects 0.000 abstract description 3
- 238000004458 analytical method Methods 0.000 abstract description 2
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 57
- 239000000463 material Substances 0.000 description 43
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920006267 polyester film Polymers 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- UGFMBZYKVQSQFX-UHFFFAOYSA-N para-methoxy-n-methylamphetamine Chemical compound CNC(C)CC1=CC=C(OC)C=C1 UGFMBZYKVQSQFX-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/45—Interferometric spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Microscoopes, Condenser (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
An interference spectrometer based on an optical switch array and a manufacturing method thereof relate to the technical field of infrared spectrum detection and infrared spectrum analysis, and solve the problems of large size, heavy weight and the like caused by the adoption of a high-precision moving mirror driving system of the traditional time modulation Fourier transform infrared spectrometer, and the problems of high cost and the like caused by the adoption of a refrigeration type infrared area array detector of the traditional time modulation Fourier transform infrared spectrometer. The invention relates to a spectrometer which respectively performs distributed phase modulation on two orthogonal coherent light fields separated by a beam splitter by using two step phase reflectors and performs amplitude modulation on the interference light fields by using a light switch array and a point detector to realize step gating and detection. The invention reduces the cost and has the advantages of microminiaturization, light weight, low cost, good portability and the like.
Description
Technical Field
The invention relates to infrared interference spectrum instruments in the technical field of infrared spectrum detection and infrared spectrum analysis, in particular to interference spectrometers based on optical switch arrays and a manufacturing method thereof.
Background
The Fourier transform infrared spectrometer is types of infrared interference spectrum instruments, and has the advantages of multiple channels, high flux, high precision, low stray light and the like, and has obvious application advantages.
Disclosure of Invention
The invention provides interference spectrometers based on optical switch arrays and a manufacturing method thereof, aiming at solving the problems of large size, heavy weight and the like caused by the adoption of a high-precision moving mirror driving system of a traditional time modulation Fourier transform infrared spectrometer and the problems of high cost and the like caused by the adoption of a refrigeration type infrared area array detector of a space modulation Fourier transform infrared spectrometer.
The interference spectrometer based on the optical switch array comprises a light source, a collimating mirror, a beam splitter, a transverse step phase reflector, a longitudinal step phase reflector, an optical switch array, a focusing mirror and a point detector, wherein light emitted by the light source is changed into parallel light beams after passing through the collimating mirror, the light beams of the parallel light beams after being reflected by the beam splitter are incident to the transverse step phase reflector, the light beams after being transmitted by the beam splitter are incident to the longitudinal step phase reflector, and the transverse step phase reflector and the longitudinal step phase reflector respectively perform space distributed phase modulation on the incident light beams and then interfere with the incident light beams again through the beam splitter to form an interference light field array; the interference light field array is incident on the optical switch array, each optical switch unit in the optical switch array receives each interference light field unit in the interference light field array in a stepping mode, and the interference light field units are converged on a point detector by a focusing lens to obtain an interference light intensity sampling sequence;
the transverse step phase reflector and the longitudinal step phase reflector divide an incident light field into a plurality of light field units, and each light field units correspond to row reflector units of the transverse step phase reflector and column reflector units of the longitudinal step phase reflector, each row reflector unit on the transverse step phase reflector corresponds to phase modulation amounts, each column reflector unit on the longitudinal step phase reflector corresponds to another phase modulation amounts, when the transverse step phase reflector interferes with the light field reflected by the longitudinal step phase reflector, the interference light field corresponding to each row reflector unit on the transverse step phase reflector and each column reflector unit on the longitudinal step phase reflector has phase difference, the emergent light field is an interference light field array with spatial phase difference distribution, and each interference light field units correspond to different phase differences;
the emergent interference light field array is incident on the optical switch array, each optical switch unit in the optical switch array corresponds to interference light field units in the interference light field array, and when a optical switch units in the optical switch array are in an open circuit state, the interference light field units in the interference light field array corresponding to the optical switch units pass through and are received by the point detector through the focusing mirror.
The manufacturing method of the interference spectrometer based on the optical switch array is realized by the following steps:
the manufacturing method of the interference spectrometer based on the optical switch array adopts a method of combining visible laser array calibration and infrared camera observation to carry out system integration, and is characterized by comprising the following steps:
, calibrating the system optical axis by using a visible laser array, wherein the laser array has the same row number M as the transverse step phase reflector and the same column number N as the longitudinal step phase reflector, the horizontal distance of each laser unit of the laser array is equal to the unit width b of the longitudinal step phase reflector, the vertical distance of each laser unit of the laser array is equal to the unit width a of the transverse step phase reflector, and the optical axes of the laser array are parallel by adjusting the position and the angle of a laser array source;
inserting pieces of 45-degree visible light splitting prisms into a light path, wherein the visible light splitting prisms divide the laser array light beam into two paths, the positions and the angles of the splitting prisms are adjusted to enable the transmitted laser beam to be collinear with the laser array light beam, and the reflected laser beam to be perpendicular to the laser array light beam;
placing a transverse step phase reflector 4 in a light path of a reflection laser array, and enabling each row of laser beams in the light path of the reflection laser array to be incident on the central line of a long axis of each row of reflector units of the transverse step phase reflector by adjusting the position and the angle of the transverse step phase reflector, and enabling the light beams incident on the transverse step phase reflector to return along the original path, so that the transverse step phase reflector is vertical to the optical axis of the laser array;
placing a longitudinal step phase reflector in a light path of a transmission laser array, and enabling each row of laser beams in the light path of the transmission laser array to be incident on a long axis central line of each row of reflector units of the longitudinal step phase reflector by adjusting the position and the angle of the longitudinal step phase reflector, and enabling the light beams incident on the longitudinal step phase reflector to return along the original path, so that the longitudinal step phase reflector is collinear with an optical axis of the laser array;
rotating the visible light beam splitter prism by 90 degrees, turning the reflected laser beams by 180 degrees, placing the optical switch array in a light path of the rotated reflected laser beams, and enabling each laser beam incident on the optical switch array to be positioned at the central position of each optical switch unit of the optical switch array by adjusting the position and the angle of the optical switch array;
removing the visible light splitting prism, and placing the beam splitter at the position of the visible light splitting prism; by adjusting the position and the angle of the beam splitter, each laser beam reflected to the transverse step phase reflector is positioned on the central line of the long axis of each row of reflector units, and the light beam reflected by the transverse step phase reflector returns along the original path;
placing a collimating mirror in a front light path, and adjusting the position and the angle of the collimating mirror to ensure that the laser array is symmetrically distributed on the surface of the collimating mirror, and laser beams reflected by the surface of the collimating mirror are also distributed in an opposite array on a laser array source plane, so as to ensure that the optical axis of the collimating mirror is horizontal;
removing the laser array, placing the infrared light source in front of the collimating mirror, and adjusting the position of the infrared light source to enable the infrared light source to be positioned on the object focus of the collimating mirror;
placing the infrared camera on the optical switch array, turning on an infrared light source, setting all optical switch units of the optical switch array to be in an on state, adjusting the position of the infrared camera to enable of the two step phase reflectors to clearly image on an area array detector of the infrared camera, then adjusting the axial translation positions of the other step phase reflectors, and observing by adopting the infrared camera until an interference image appears;
removing the infrared camera, placing a focusing mirror behind the optical switch array, placing the infrared area array detector on an image focal plane of the focusing mirror, and enabling the light beams in the on states of the optical switch units to be focused on the central position of the infrared area array detector by adjusting the position and the angle of the focusing mirror;
and step ten, removing the infrared area array detector, placing the point detector on a focal plane of the focusing mirror, adjusting the position of the point detector, fixing each device when the output signal of the point detector is maximum, and completing system integration manufacturing.
The interference spectrometer based on the optical switch array has the beneficial effects that the interference spectrometer based on the optical switch array is spectrum instruments which respectively perform distributed phase modulation on two coherent light fields separated by a beam splitter by using two step phase reflectors and perform amplitude modulation on the interference light fields by using the optical switch array and a point detector so as to realize step-by-step gating and detection.
Drawings
FIG. 1 is a schematic diagram of an interference spectrometer based on an optical switch array according to the present invention;
FIG. 2 is a schematic diagram of the mirror positions of the transverse step phase mirror and the longitudinal step phase mirror relative to the beam splitter and the distribution of the distributed phase difference formed by the modulation of the optical field in the interference spectrometer based on the optical switch array according to the present invention;
FIG. 3 is a schematic diagram of the optical switch array gating a light field unit in the interference light field array in the interference spectrometer based on the optical switch array according to the present invention;
FIG. 4 is a schematic diagram of step-by-step gating of an optical switch array to an interference light field array in the interference spectrometer based on the optical switch array according to the present invention;
FIG. 5 is a schematic diagram of the matching of diffraction spots with the photosensitive surface of a detector in the optical switch array based interference spectrometer of the present invention;
FIG. 6 is a front view of the matching of diffraction spots with the photosensitive surface of the detector in the optical switch array based interference spectrometer of the present invention;
FIG. 7 is a top view of a grid splitter in an interference spectrometer based on an optical switch array according to the present invention;
FIG. 8 is a schematic diagram of horizontal and vertical grid rib configurations for ten kinds of grid splitters, wherein the left part of FIGS. 8a, 8c, 8e, 8g, 8i, 8k, 8m, 8o, 8q and 8s are front cross-sectional views of ten kinds of grid splitters; fig. 8b, 8d, 8f, 8h, 8j, 8l, 8n, 8p, 8r and 8t on the right part are left sectional views of corresponding main sectional views, respectively;
FIG. 9a to FIG. 9f are schematic cross-sectional views of a double-sided grating edge in FIG. 9;
FIG. 10 is a top view of a grating beam splitter structure;
FIG. 11 is a schematic diagram of horizontal and vertical grating structures of ten grating beam splitters, wherein FIG. 11a, FIG. 11c, FIG. 11e, FIG. 11g, FIG. 11i, FIG. 11k, FIG. 11m, FIG. 11o, FIG. 11q and FIG. 11s at the left part are front sectional views of ten grating beam splitters; 11b, 11d, 11f, 11h, 11j, 11l, 11n, 11p, 11r and 11t on the right side are left side sectional views corresponding to the main sectional views, respectively;
FIG. 12 is a schematic diagram of a process for making a wire-grid thin film beam splitter;
FIG. 13 is a schematic diagram of a fabrication process for a grating film splitter;
FIG. 14 is a schematic diagram of a step phase mirror with a step structure formed by multiple film deposition;
FIG. 15 is a schematic structural diagram of a step phase reflector with a step structure formed by multiple etching;
FIG. 16 is a schematic structural view of a stepped phase reflector having a stepped structure formed by a hybrid method of etching first and then coating;
FIG. 17 is a schematic view of a stepped phase reflector having a stepped structure formed by cutting;
fig. 18a to 18g in fig. 18 are schematic diagrams respectively illustrating a manufacturing sequence of the interference spectrometer based on the optical switch array according to the present invention.
Detailed Description
Detailed description of the preferred embodimentsa specific embodiment is described with reference to fig. 1 to 17. an interference spectrometer based on an optical switch array includes a light source 1, a collimator lens 2, a beam splitter 3, a transverse step phase mirror 4, a longitudinal step phase mirror 5, an optical beam splitter array 6, a focusing lens 7, and a point detector 8.
The light source 1 is located on the object focal plane of the collimator lens 2, a divergent light beam emitted by the light source 1 passes through the collimator lens 2 and then becomes a parallel light beam, and the beam splitter 3 is located in the parallel light beam and divides the parallel light beam into two coherent light beams with equal intensity. The transverse step phase mirror 4 and the longitudinal step phase mirror 5 are located at the exit pupil positions of the collimator mirror in the two perpendicular optical paths reflected and transmitted by the beam splitter, respectively, and are in mirror image positions with respect to the beam splitter 3.
The light field reflected by the beam splitter 3 is incident on the transverse step phase reflector 4, and the light field transmitted by the beam splitter 3 is incident on the longitudinal step phase reflector 5. the step arrangement of the transverse step phase reflector 4 and the longitudinal step phase reflector 5 is mirror-orthogonal relative to the beam splitter 3, so that the incident light field is divided into a plurality of localized light field units, and each light field units correspond to row reflector units on the transverse step phase reflector 4 and column reflector units on the longitudinal step phase reflector 5.
The transverse step phase reflector 4 introduces a longitudinally distributed phase modulation amount to the incident light field, and the longitudinal step phase reflector 5 introduces a transversely distributed phase modulation amount to the incident light field.
Since each row mirror unit on the transverse step phase mirror 4 corresponds to phase modulation amounts and each column mirror unit on the longitudinal step phase mirror 5 corresponds to phase modulation amounts, when the transverse step phase mirror 4 interferes with the light field reflected by the longitudinal step phase mirror 5, the interference light field corresponding to each row mirror unit on the transverse step phase mirror 4 and each column mirror unit on the longitudinal step phase mirror 5 has phase difference values, therefore, the emergent light field is an interference light field array with spatial phase difference distribution, and each interference light field unit corresponds to phase difference values.
When a optical switch units on the optical switch array 6 are in an open circuit state, the interference optical field units corresponding to the optical switch units are allowed to pass through and are received by the point detector 8 through the focusing mirror 7, so that each interference optical field unit in the interference optical field array sequentially opens and closes according to a spatial phase difference arrangement sequence, each interference optical field unit in the interference optical field array sequentially passes through the optical switch array 6 according to the phase difference sequence, and each interference optical field unit in the interference optical field array sequentially passes through the focusing mirror 7 and is sequentially received by the point detector 8 through the focusing mirror 7, and the interference optical field array is converged by the focusing mirror 7 to be sequentially received on the point detector 8, so that an interference light intensity sampling sequence is obtained.
In the optical switch array 6 of the present embodiment, the opening and closing sequence of each optical switch unit needs to be the same as the phase difference arrangement sequence formed by the two step phase mirrors, that is, the addressing of the optical switch unit is strictly matched with the phase difference distribution formed by the two step phase mirrors, and the opening and closing of each optical switch unit is controlled to control the on and off of the corresponding interference optical field unit, thereby implementing the sequential gating of the interference optical field array. And the opening and closing of the corresponding optical switch units on the optical switch array are sequentially controlled according to the spatial distribution sequence of the phase differences in the interference optical field array, so that each interference optical field unit in the interference optical field array sequentially passes through the optical switch array according to the sequence of the phase differences and is converged to the point detector 8 by the focusing mirror 7 to be sequentially received.
In this embodiment, the transverse step phase mirror 4 and the longitudinal step phase mirror 5 are located at mirror positions corresponding to the beam splitter 3, and a certain row mirror unit of the transverse step phase mirror 4 is overlapped with a certain column mirror unit of the longitudinal step phase mirror 5 in a mirror image manner, the transverse step phase mirror 4 and the longitudinal step phase mirror 5 are both composed of a plurality of mirror units, each mirror units correspond to thickness values, and the mirror units with different thicknesses are sequentially arranged into a step structure.
Specifically, referring to fig. 2, for the transverse stepped phase mirror 4, with the 0 th row mirror unit 4-1 in the stepped phase mirror as a reference, the transverse stepped phase mirror 4 is configured to have M row mirror units, the width of each row mirror unit is a, the thickness of the 1 st row mirror unit 4-2 relative to the 0 th row mirror unit 4-1 is h, and the thicknesses of the remaining row mirror units sequentially increase by taking h as a step length along the longitudinal direction. In order to realize effective sampling of the interference pattern, the thickness h of the reflector unit is required to be less than or equal to lambda/4.
The wave number of incident light is set to be nu, the phase modulation amount introduced by the 1 st line reflector unit 4-2 to the light field incident thereon is 4 pi nu h, and the phase modulation amount introduced by the M-1 st line reflector unit to the light field incident thereon is 4 pi nu (M-1) h. Thus, the phase modulation of the light field by the transverse step phase mirror 4 can be expressed as
In the formula, (x, y) is a coordinate point, j is an imaginary number, and rect () is a rectangular function; for the longitudinal step phase mirror 5, with the 0 th column mirror unit 5-1 in the step phase mirror as a reference, the step phase mirror 5 is set to have N column mirror units, the width of each column mirror unit is b, the thickness of the 1 st column mirror unit 5-2 relative to the 0 th column mirror unit 5-1 is Mh, and the thicknesses of the rest column mirror units are sequentially increased along the transverse direction by using Mh as a step length. Thus, the 1 st column mirror unit introduces a phase modulation amount of 4 π ν Mh to the light field incident thereon, and the N-1 st column mirror unit introduces a phase modulation amount of 4 π ν (N-1) Mh to the light field incident thereon. The phase modulation of the light field by the longitudinal stepped phase mirror 5 can be expressed as
When the 0 th row mirror unit 5-1 of the longitudinal step phase mirror 5 and the M-1 th row mirror unit 4-3 of the transverse step phase mirror 4 are overlapped with the mirror image of the beam splitter, the phase difference of the corresponding interference light field unit is 0, so that the 0 th row mirror unit of the longitudinal step phase mirror and the M-2 th row mirror unit of the transverse step phase mirror reflectThe phase difference of the interference light field unit corresponding to the mirror unit is
The phase difference between the interference light field units corresponding to the 0 th column reflector unit of the longitudinal step phase reflector and the M-3 th row reflector unit of the transverse step phase reflector is
The phase difference between the interference light field unit corresponding to the 0 th column mirror unit of the longitudinal step phase mirror 5 and the 0 th row mirror unit of the transverse step phase mirror is
The phase difference between the interference light field unit corresponding to the 1 st column reflector unit of the longitudinal step phase reflector 5 and the M-1 st row reflector unit of the transverse step phase reflector is
The phase difference between the interference light field unit corresponding to the 1 st column reflector unit of the longitudinal step phase reflector and the M-2 th row reflector unit of the transverse step phase reflector isBy analogy, the phase difference between the interference light field unit corresponding to the nth column reflector unit of the longitudinal step phase reflector and the interference light field unit corresponding to the mth row reflector unit of the transverse step phase reflector is
Thereby forming a spatially distributed phase difference array 9.
When the nth of the longitudinal step phase reflector 50M-th of the column mirror unit and transverse step phase mirror 40When the row mirror units are mirror-superposed with respect to the beam splitter 3, then (m) th0,n0) Phase difference of each interference light field unit is 0, nth of longitudinal step phase reflector 50Single column reflectionM-th mirror unit and transverse step phase mirror 401 line mirror units corresponding to the interference light field unit having a phase difference ofNth of longitudinal step phase reflector0M-th of the column mirror unit and transverse step phase mirror 40The phase difference of the interference light field units corresponding to +1 line reflector units is
By analogy, the phase difference between the nth column mirror unit of the longitudinal step phase mirror 5 and the mth row mirror unit of the transverse step phase mirror 4 is
By controlling the mirror image coincidence of different reflector units of the transverse step phase reflector 4 and the longitudinal step phase reflector 5 relative to the beam splitter 4, different sampling modes such as unilateral sampling, bilateral sampling, small bilateral sampling and the like of interference light intensity can be realized.
The optical switch array 6 according to the present embodiment is located in the interference optical field array modulated by the step phase mirror, and forms an angle of 45 ° with the beam splitter. In order to enable the light field emitted by the optical switch array 6 and the light field detected by the point detector 8 to satisfy the fourier transform relationship for realizing the optimal reception, the optical switch array 6 is positioned on the object space focal plane of the focusing mirror 7, and the point detector 8 is positioned on the image space focal plane of the focusing mirror 7.
The optical switch array 6 may be implemented by using a liquid crystal spatial light modulator, and the specific implementation manner is that the liquid crystal spatial light modulator is divided into a plurality of liquid crystal spatial light modulation units, each liquid crystal spatial light modulation unit is used as optical switch units, and corresponds to each interference light field unit , and the amplitude modulation of the interference light field array is implemented by controlling the light transmission and light non-transmission of each liquid crystal spatial light modulation units.
Specifically, referring to fig. 3, the optical switch array 6 is formed by a plurality of optical switch units distributed in a two-dimensional space, and by controlling the on and off of the optical switch unit 6-1, the passing and blocking of the interference optical field unit 10-1 corresponding to the optical switch unit 6-1 in the interference optical field array 10 can be realized. To achieve efficient gating of the interferometric light field array 10 by the optical switch array 6, each optical switch element in the optical switch array 6 needs to be matched to each interferometric light field element of the interferometric light field array.
Setting the transverse step phase reflector 4 to have M row reflector units, the width of each row reflector unit is a, setting the longitudinal step phase reflector 5 to have N column reflector units, the width of each column reflector unit is b, setting the size of each optical switch unit of the optical switch array 6 to be s multiplied by t and the number to be K multiplied by L, and then setting the size of each optical switch unit in the optical switch array 6 to satisfy the relation that s is less than or equal to a and t is less than or equal to b, and setting the array number of the optical switch array to satisfy the relation that K is greater than or equal to M and L is greater than or equal to N. The amplitude modulation effect of the optical switch array 6 on the optical field can be expressed as
The optical switch array 6 according to the present embodiment performs step-wise gating on the interference light field array according to the distribution sequence of the phase differences, that is, the addressing of the optical switch array corresponds to the spatial distribution of the phase differences;
specifically, referring to fig. 4, when the interference light field array is incident on the optical switch array, assuming that the (m, n) th optical switch unit 6-1 in the optical switch array is in the "on" state, and the rest of the optical switch units are in the "off" state, the "on" state of the (m, n) th optical switch unit 6-1 transmits the (m, n) th interference light field unit 10-1 of the interference light field array and converges on the spot detector 8 through the focusing mirror 7 for detection, and the "off" states of the rest of the optical switch units block the rest of the interference light field units, at the time point of , the "on" state of the (m +1, n) th optical switch unit 6-2 in the optical switch array is in the "on" state, and the rest of the optical switch units are in the "off" state, the "on" state of the (m +1, n) th optical switch unit 6-2 of the interference light field array transmits through the interference light field switch unit 10-2 and converges on the spot detector 8 through the focusing mirror 7, and the rest of the optical switch units receive the interference light field sequence, and the phase difference is obtained by the step light field switch units.
The focusing mirror 7 described in this embodiment is used to converge an interference light field unit gated by a certain optical switch unit of the optical switch array on the point detector 8 for collection, the focusing mirror works in an infrared band and is made of infrared optical materials such as silicon, germanium, zinc selenide, zinc sulfide and the like, in order to realize effective convergence of the focusing mirror 7 on all interference light field units, the aperture of the focusing mirror 7 needs to be matched with the apertures of the step phase reflector and the optical switch array, that is, the aperture phi of the focusing mirror 7 should satisfy the relationship
The embodiment is described with reference to fig. 5 and 6, the point detector 8 described in the embodiment is located at the image-side focal point of the focusing mirror 7, and energy collection is performed on interference light field units, the point detector 8 is made of indium antimonide (InSb) or mercury cadmium telluride (HgCdTe) material, the focal length of the focusing mirror 7 is set to be f, the size of the photosensitive surface of the point detector 8 is c × d, the wavelength of the light wave is λ, the interference light intensity converged on the point detector 8 is diffraction spots 11 due to the influence of the aperture diffraction effect of each optical switch unit of the optical switch array, and the transverse size and the longitudinal size of the diffraction spots are respectively 2 λ f/s and 2 λ f/t, so that in order to suppress the overflow of the light energy from the detector, the light energy of the diffraction spots 11 needs to be focused into the photosensitive surface of the point detector 8, therefore, the size of the photosensitive surface of the detector 8 must be larger than the size of the diffraction spots 11 of the;
the size of the photosensitive surface of the detector should satisfy the relationship
In this embodiment, the beam splitter 3 is atThe infrared band can adopt a parallel flat plate structure, and is composed of a beam splitting plate and a compensating plate, wherein the beam splitting plate adopts infrared optical materials such as zinc selenide (ZnSe), potassium bromide (KBr) or cesium iodide (CsI) as a substrate material, or semiconductor materials such as undoped silicon (Si), germanium (Ge) and gallium arsenide (GaAs) as the substrate material, the compensating plate adopts the same substrate material as the beam splitting plate, the flatness requirements of the two surfaces of the beam splitting plate and the compensating plate are less than or equal to lambda/20, the surface roughness requirement is less than or equal to 3nm, and lambda is the wavelength
The beam splitter can also adopt a light beam splitter with a grid edge structure, and the grid beam splitter supports the beam splitting film by utilizing a grid structure. Because the beam splitting film is too thin to be self-supporting, the beam splitting film is supported by adopting a grid structure. The grid structure is made of semiconductor materials, and the beam splitting film is made of polyester films. The grid structure needs to be matched with the structure of the step phase reflector. The grating film beam splitter is arranged at an angle of 45 degrees with the optical axis of the system, and the size of each grid period of the grating film beam splitter is equal to that of each grid period according to the geometric parameters of the step phase reflector
Specifically, the embodiment is described with reference to FIG. 7 and FIG. 8, in which the grid structure of the grid film splitter is composed of grid ribs 3-1 and beam splitting windows 3-2 with grid edges of transverse width and longitudinal width
The width of the beam-splitting window 3-2 in the transverse direction is larger than that in the longitudinal directionThe beam splitting window 3-2 has the same duty cycle in the lateral and longitudinal directions. Since the size of the beam splitting window determines the luminous flux of the system, the area of the beam splitting window 3-2 is much larger than the area of the grating edge 3-1. The projection of each beam splitting window 3-2 on the transverse step phase mirror 4 and the longitudinal step phase mirror 5 is located on the respective mirror unit, while the projection of each grating edge 3-1 on the transverse step phase mirror 4 and the longitudinal step phase mirror 5 is located at the intersection of the adjacent mirror units.
The number of grids in two different directions of the grid beam splitter is P and Q respectively, and P is equal to Q or P is not equal to Q; p corresponds to the direction of M of the step phase reflector, and M and P have a multiple relation; q corresponds to the N direction of the step phase reflector, and N and Q have a multiple relation.
The period of the grid mesh in the P direction is a '+ b', a 'is the single edge width in the P direction, and b' is the width of the single beam splitting window in the P direction. Wherein a ' 2 ═ a ' 3 ═ … ═ a ' P; a '1 and a' (P +1) can be the same as or different from other grid edges; b ' 1 ═ b ' 2 ═ … ═ b ' P. Total length of the grating beam splitter P direction: lp is a ' 1+ b ' 1+ a ' 2+ b ' 2+ … + a ' P + b ' P + a ' (P + 1).
The period of the grid mesh in the Q direction is c '+ d', c 'is the single edge width in the Q direction, and d' is the width of the single beam splitting window in the Q direction. Wherein c ' 2 ═ c ' 3 ═ … ═ c ' q; c '1 and c' (Q +1) can be the same as or different from other grid edges; d ' 1 ═ d ' 2 ═ … ═ d ' Q. Total length of grating beam splitter Q direction: LQ ═ c ' 1+ d ' 1+ c ' 2+ d ' 2+ … + c ' Q + d ' Q + c ' (Q + 1).
The widths a 'and c' of the edges of the grid beam splitter are 1nm-100cm, and the widths b 'and d' of the beam splitting windows are 1nm-100 cm; the thickness range of the edges of the grid mesh beam splitter is 1nm-100cm, and the thickness range of the beam splitting window is 1nm-100 cm. The addition or non-addition of the compensation plate can be selected according to specific parameters, and the structure and the material of the compensation plate can be the same as or different from those of the beam splitter.
The cross-section of the grating edge structure in the grating net beam splitter structure can be rectangular (fig. 8i, fig. 8k, fig. 8m, fig. 8o), fig. 8a, fig. 8c, fig. 8e, fig. 8f, fig. 8i, fig. 8j, fig. 8m, fig. 8n, fig. 8q, fig. 8r, fig. 8c, fig. 8d, fig. 8g, fig. 8h, fig. 8k, fig. 8l, fig. 8o, fig. 8p, fig. 8s, fig. 8t, the grating edge structure can be rectangular (fig. 8i, fig. 8k, fig. 8m, fig. 8o), parallelogram (fig. 8a, fig. 8c, fig. 8e, fig. 8g), trapezoid (fig. 8q, fig. 8s), arc or other shapes, in the same grating net beam splitters, the grating edge structure in the horizontal direction can be , or different structures.
In conjunction with fig. 9, in the grating beam splitter structure, the cross section of the grating edge structure may also be a double-sided rectangle (fig. 9a and 9b), a double-sided parallelogram (fig. 9c and 9d), a double-sided trapezoid (fig. 9e and 9f), or other shapes.
The present embodiment is described with reference to fig. 10, fig. 10 is a top view of a grating beam splitter structure, where 3-1 is a grating edge and 3-2 is a beam splitting window. The grid number of the grid beam splitter is Q, Q corresponds to the N direction of the step phase reflector, and N and Q have a multiple relation. The period of the grid bars in the Q direction is c '+ d', c 'is the single edge width in the Q direction, and d' is the width of a single beam splitting window in the Q direction. Wherein c ' 2 ═ c ' 3 ═ … ═ c ' Q; c '1 and c' (Q +1) can be the same as or different from other grid edges; d ' 1 ═ d ' 2 ═ … ═ d ' Q. Total length of grating beam splitter Q direction: LQ ═ c ' 1+ d ' 1+ c ' 2+ d ' 2+ … + c ' Q + d ' Q + c ' (Q + 1).
The width c 'of the edge of the grating beam splitter ranges from 1nm to 100cm, and the width d' of the beam splitting window ranges from 1nm to 100 cm; the thickness range of the edge of the grating beam splitter is 1nm-100cm, and the thickness range of the beam splitting window is 1nm-100 cm. The addition or non-addition of the compensation plate can be selected according to specific parameters, and the structure and the material of the compensation plate can be the same as or different from those of the beam splitter.
The grating beam splitter has beam splitting window, grating edge and grating net beam splitter similar structure and may be homogeneous structure or heterogeneous structure, and the grating beam splitter has grating edge structure with rectangular, parallelogram, trapezoidal or other cross section and grating beam splitters with grating edge in horizontal direction and grating edge in vertical direction in or different structure forms.
Fig. 11 is a schematic diagram of the horizontal and vertical grating edge structures of 10 grating beam splitters. In the grating beam splitter structure, the cross section of the grating edge structure can also be a double-sided rectangle, a double-sided parallelogram, a double-sided trapezoid or other shapes.
In this embodiment, the grating materials in the grating beam splitter and the grating beam splitter may be selected from metal, non-metal inorganic materials or organic materials, or may be a mixture of several materials. Metals such as aluminum, copper, titanium, nickel, gold, etc., non-metallic materials such as aluminum oxide, ceramic, quartz, glass, calcium fluoride, zinc selenide, zinc sulfide, silicon, germanium, silicon dioxide, silicon nitride, etc., and organic materials having a supporting function. The beam splitting window material may be quartz, glass, calcium fluoride, magnesium fluoride, barium fluoride, lithium fluoride, zinc selenide, zinc sulfide, silicon, germanium, silicon dioxide, silicon nitride, polyimide, PMMA, aluminum, beryllium, a non-metallic inorganic material, or an organic material. Refractive, reflective, and absorptive materials in the range from X-rays to far infrared, or even wider wavelength ranges not proposed in this embodiment can be applied to the device.
The present embodiment is described with reference to fig. 12, where fig. 12 is a process for manufacturing a grating network thin film beam splitter, and a grating network structure is manufactured by a micro-optical electromechanical system (MOEMS) process, specifically with reference to fig. 12, a semiconductor material such as undoped silicon (Si), germanium (Ge), and gallium arsenide (GaAs) is selected as a substrate, layers of photoresist are first spin-coated on the semiconductor substrate material, as shown in fig. 12a, then the photoresist at the position of a beam splitting window is removed by exposing and developing with a mask of a grating network pattern, and the surface of the semiconductor substrate is exposed, as shown in fig. 12b, then the semiconductor substrate material at the position of the beam splitting window is removed by wet etching or dry etching, and a hollow structure is formed, as shown in fig. 12c, the photoresist at the position of a grating edge is finally removed, so as shown in fig. 12d, the beam splitting window is fixed on the grating network structure, the grating edge is supported, the beam splitting is realized by the grating beam splitting window, and finally, the manufacturing of the grating network thin film beam splitter is completed, as shown.
When the used beam splitting film is thick, a grid film beam splitter can be adopted, and the grid film beam splitter supports the beam splitting film by utilizing a grid structure. The grid structure is made of semiconductor materials, and the beam splitting film is made of polyester films. The grating structure needs to match the structure of the transversal step phase mirrors. The grating film beam splitter is arranged at an angle of 45 degrees with the optical axis of the system, and the size of each strip period of the grating film beam splitter is equal to that of each strip period of the grating film beam splitter according to the geometric parameters of the step phase reflector
Referring to fig. 13, which illustrates the present embodiment, fig. 13 is a schematic diagram of a process for manufacturing a grating thin film beam splitter, wherein the width of the beam splitting window is much larger than the width of the grating edge because the size of the beam splitting window determines the luminous flux of the system. The projection of each beam splitting window on the transverse step phase mirror 4 is located on each mirror cell, and the projection of each grating edge on the transverse step phase mirror 4 is located at the intersection of adjacent mirror cells.
The grating structure is manufactured by adopting a micro optical electromechanical system (MOEMS) process, non-doped semiconductor materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like are selected as substrates, layers of photoresist are firstly spin-coated on the semiconductor substrate material as shown in figure 13a, then a mask plate with grating patterns is placed on the substrate on which the photoresist is spin-coated, the photoresist at the position of a beam splitting window is removed through exposure and development, the surface of the semiconductor substrate at the position of the beam splitting window is exposed as shown in figure 13b, then the semiconductor substrate material at the position of the beam splitting window is removed by adopting a wet etching or dry etching technology to form a hollow structure as shown in figure 13c, finally the photoresist at the position of the grating edge is removed to form the grating structure as shown in figure 13d, the polyester film is fixed on the grating structure, the grating edge is supported by using the grating, the beam splitting window is used for realizing the beam splitting of the polyester film, and the manufacturing of the grating film beam splitter is finally completed as shown in figure 13 e.
In the embodiment, the manufacturing method of the grid beam splitter can be divided into an body manufacturing method and a split manufacturing method, a body manufacturing method 1 is an ultra-precision machining method, the body material is cut, ground, polished and the like, a manufacturing method 2 is a manufacturing method adopting an MEMS technology, and a body material is subjected to photoetching, dry etching, wet etching and the like, for example, an anisotropic etching method, an RIE etching method, an ICP etching and surface polishing modification method and the like of a single crystal material, and a manufacturing method combining related MEMS methods.
Example 1: the grid beamsplitter of fig. 8s was fabricated from a double-side polished (100) single crystal silicon wafer with high flatness and high parallelism. The preparation method comprises the following steps:
1. growing or evaporating silicon dioxide, silicon nitride and other dielectric films or composite films on the surface of the cleaned double-side polished single crystal silicon to be used as masking films;
2. etching the side groove with anisotropic etching liquid of monocrystalline silicon to etch depth equal to final thickness of the beam splitting window, or arranging multiple rectangles or squares at fixed distance.
3. And carrying out second photoetching to expose the beam splitting window pattern, and removing the masking film in the beam splitting window pattern through etching to expose the surface of the single crystal silicon. And removing the photoresist, and simultaneously corroding the side groove and the beam splitting window by using monocrystalline silicon anisotropic corrosive liquid until the corrosion depth of the side groove is 0, wherein the beam splitting window reaches the final thickness.
4. And removing the masking film, evaporating the beam splitting film, and finishing the preparation of the device.
Example 2a double-sided grating beam splitter, having both lateral and longitudinal grating structures as in fig. 9f, can be fabricated as described above, except that a double-sided masking film is required to be fabricated, which is achieved by double-sided lithography and double-sided etching, with the same pattern on the upper and lower surfaces, and at the th lithography etching, the sum of the etch depths of the upper and lower surface side trenches is the final thickness value of the splitting window.
Example 3: the beam splitter with the structure of the grid mesh is manufactured in the shape of fig. 8k, and the material is a double-sided polished silicon wafer with high flatness and high parallelism. The manufacturing process flow is as follows:
1. evaporating and plating an aluminum film or thermally grown silicon dioxide or evaporated silicon nitride and other metal films or medium films or composite films on the surface of the cleaned double-side polished monocrystalline silicon to serve as masking films;
2. etching to expose the side groove pattern, removing the masking film in the side groove pattern by etching to expose the surface of the single crystal silicon, etching the side groove by ICP or RIE technique to a depth equal to the final thickness of the beam splitting window, wherein the side groove shape can be formed by arranging a plurality of rectangles or squares or circles or ellipses or other polygonal shapes at a certain distance of besides the figure.
3. And carrying out second photoetching to expose the beam splitting window pattern, and removing the masking film in the beam splitting window pattern through etching to expose the surface of the single crystal silicon. And removing the photoresist, and etching the side groove and the beam splitting window simultaneously by adopting an ICP (inductively coupled plasma) or RIE (reactive ion etching) technology until the etching depth reaches 0, wherein the beam splitting window reaches the final thickness.
4. And removing the masking film, evaporating the beam splitting film, and finishing the preparation of the device.
Example 4:
the double-sided grating prism beam splitter with both the transverse grating structure and the longitudinal grating structure shown in fig. 9b can be manufactured by the method, except that a double-sided masking film needs to be manufactured, the double-sided masking film is realized by double-sided photoetching and double-sided etching, the patterns of the upper surface and the lower surface are the same, and the sum of the corrosion depths of the side grooves on the upper surface and the lower surface is the final thickness value of the splitting window during times of photoetching.
Example 5:
the double-side polished (110) monocrystalline silicon wafer with the structure of the grid beam splitter manufactured in the shape of fig. 8o and made of high-flatness and high-parallelism materials is prepared. The manufacturing process flow is similar to that of the embodiment 1.
Example 6:
for a double-sided grating prism beam splitter having a structure corresponding to the shape of the grating beam splitter as shown in fig. 8o, the material is the same as that in example 5, the manufacturing method is similar to that in example 5, except that a double-sided masking film needs to be prepared, the double-sided masking film is realized by double-sided lithography and double-sided etching, the upper surface pattern and the lower surface pattern are the same, and the sum of the upper surface edge groove corrosion depth and the lower surface edge groove corrosion depth is the final thickness value of the splitting window in th lithography etching.
The grating net and grating beam splitter made of other materials or structures can be realized by the method, and can also be realized by alternately performing wet etching and dry etching of MEMS (micro-electromechanical systems), a single crystal material forming a required included angle with a certain conventional crystal orientation can be used as a substrate in the manufacturing process to etch a structure with an inclination angle, a structure with an inclination angle can be etched by an inclined rotation method, and a compensation pattern can be designed to ensure that the obtained structure is more accurate.
, selecting the beam splitting window and the grating edge as the same or different materials, preparing the grating edge structure on the surface of the beam splitting window with or without supporting material, the grating edge structure can realize the grating edge of metal and nonmetal materials, semiconductor materials, organic materials and other materials by MEMS technology, such as X-ray photoetching, deep ultraviolet photoetching, vapor deposition, photoetching, stripping, electroforming and other processes.
Selecting the same or different materials for the beam splitting window and the grid edge, bonding the materials of the beam splitting window structure and the grid edge structure to , then forming the grid edge structure by using ultra-precision machining or MEMS technology, removing the adhesive on the surface of the beam splitting window and the beam splitting window support body, plating a beam splitting film, and finishing the manufacture of the beam splitter.
And thirdly, selecting the beam splitting window and the grid edges to be made of the same or different materials, respectively manufacturing the beam splitting window structure and the grid edge structure by using ultra-precision machining or MEMS technology, and then combining the beam splitting window structure and the grid edge structure at by using bonding or other connection modes.
The present embodiment will be described with reference to fig. 14, in which the horizontal step phase mirror 4 and the vertical step phase mirror 5 are made of glass or quartz (SiO)2) Forming a step structure on a substrate made of materials such as silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like by a method of film layer deposition for multiple times, and firstly forming a step structure on glass, quartz (SiO)2) Spin coating layers of photoresist on a substrate made of silicon (Si), germanium (Ge), gallium arsenide (GaAs) and the like as shown in fig. 14a, removing half the width of the substrate by masking, exposing and developing to expose a surface of the substrate half the width of the substrate as shown in fig. 14b, then evaporating layers of a constant thickness by using a coating process such as electron beam evaporation or magnetron sputtering as shown in fig. 14c, then removing the photoresist and the layers of the mask portion to form two step structures as shown in fig. 14d, then performing paste coating, masking, exposing and developing again to the step structures to expose a surface of half the width of the step on each step as shown in fig. 14e, then performing deposition of the layers again by using a coating process such as electron beam evaporation or magnetron sputtering, the thickness of the photoresist and the layers of the mask portion being half the thickness of the film layer of times, as shown in fig. 14f, finally removing the photoresist and the layers of the mask portion to form four step structures as shown in fig. 14g, the process is repeated, the mask width of times, the mask width of the mask layer of the mirror structure is , and the mirror structure of the mirror structure can be obtained by using a required thickness of the mirror film.
Referring to fig. 15, the implementation will be described, the step phase mirror may be formed by multiple etching on a substrate made of semiconductor materials such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs), the step phase mirror may be formed by spin-coating layers of photoresist on the substrate made of semiconductor materials such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs) as shown in fig. 15a, removing the photoresist with a half width of the substrate by masking, exposing and developing to expose the substrate surface with a half width of the substrate, then performing -step etching on the exposed substrate surface by wet etching or dry etching process, removing the photoresist on the mask portion to form two step structures as shown in fig. 15b, then performing photoresist coating, masking, exposing and developing again on the substrate with two step structures to expose the substrate surface with -half width of the step width on each step as shown in fig. 15c, then performing -step etching depth etching on the exposed substrate surface by wet etching or dry etching process again, finally removing the photoresist on the mask portion to form four step structures as shown in fig. , and the step phase mirror may be obtained by performing four etching processes as shown in fig. 3d, and the step phase mirror 9, and the etching processes as shown in fig. 15 b.
Referring to fig. 16, the step phase mirror may be formed on a substrate made of semiconductor materials such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs) by a hybrid method of etching first and then coating, first spin-coating layers of photoresist on the substrate made of semiconductor materials such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs) as shown in fig. 16a, removing the photoresist half the width of the substrate by masking, exposing and developing to expose the substrate surface half the width of the substrate, then etching the exposed substrate surface by a certain depth using wet etching or dry etching process, then removing the photoresist of the mask portion to form two step structures as shown in fig. 16b, then coating, masking, exposing and developing again to expose the step structures, exposing the surface half the width of the step on each step as shown in fig. 16c, then depositing a coating film layer using electron beam evaporation or magnetron sputtering process, the thickness of the etching film layer is times the etching depth , finally removing the half the mask layer, forming the step structure and forming the step structure by a loop process such as 3615 d, and finally forming the step structure by a loop process.
Referring to fig. 17, the step phase reflector according to the present embodiment may be formed by cutting a metal substrate made of aluminum (Al), copper (Cu), or the like, as shown in fig. 17a, and then by cutting a shaded portion in fig. 17b with a mechanical tool, cleaning and polishing the same, so as to form two step structures as shown in fig. 17 c. The shaded portion of fig. 17d is further cut by the mechanical cutter, and after cleaning and polishing, a three-step structure is formed, as shown in fig. 17 e. The shaded portion of fig. 17f is cut again by a mechanical cutter, cleaned and polished to form a four-step structure, as shown in fig. 17 g. The process is cycled, and the required step phase reflector structure can be obtained.
After the step phase reflector structure is manufactured, evaporating a reflecting film layer made of high-reflectivity materials such as gold (Au), aluminum (Al) and the like on the surface of the step structure to finally form the step phase reflector; the planeness requirement of each reflector unit of the step phase reflector is less than or equal to lambda/20, and the surface roughness requirement is less than or equal to 3 nm.
In a second embodiment, the present embodiment is described with reference to fig. 18, and the present embodiment is a method for manufacturing an interference spectrometer based on an optical switch array according to embodiment :
and integrating the system by adopting a method combining visible laser array calibration and infrared camera observation. The specific manufacturing process comprises the following steps:
(1) calibrating the optical axis of the system by adopting a visible laser array, wherein the laser array has the same row number M as that of a transverse step phase reflector and the same column number N as that of a longitudinal step phase reflector, the transverse spacing of each laser unit of the laser array is equal to the unit width b of the longitudinal step phase reflector, the longitudinal spacing of each laser unit of the laser array is equal to the unit width a of the transverse step phase reflector, and the optical axes of the laser array are parallel by adjusting the position and the angle of a laser array source; the visible laser array calibration system is used for integrally arranging a plurality of visible lasers into an array for packaging, so that the visible laser array calibration system can emit a plurality of parallel laser beams and is used as an installation and adjustment auxiliary calibration system.
(2) visible light splitting prisms of 45 degrees are inserted into a light path, the visible light splitting prisms divide a laser array light beam into two paths, the position and the angle of the splitting prisms are adjusted to enable a transmission laser beam to be collinear with the laser array light beam, and a reflection laser beam to be vertical to the laser array light beam;
(3) placing a transverse step phase reflector 4 in a light path of a reflection laser array, and enabling each row of laser beams in the light path of the reflection laser array to be incident on the central line of a long axis of each row of reflector units of the transverse step phase reflector by adjusting the position and the angle of the transverse step phase reflector, and enabling the light beams incident on the transverse step phase reflector to return along the original path, so that the transverse step phase reflector is perpendicular to the optical axis of the laser array;
(4) placing a longitudinal step phase reflector 5 in the light path of the transmission laser array, making each row of laser beams in the light path of the transmission laser array incident on the long axis central line of each row of reflector units of the longitudinal step phase reflector by adjusting the position and angle of the longitudinal step phase reflector, and making the light beams incident on the longitudinal step phase reflector return along the original path, making the optical axis of the longitudinal step phase reflector and the optical axis of the laser array collinear, as shown in fig. 18 a;
(5) rotating the visible light splitting prism by 90 degrees, turning the reflected laser beam by 180 degrees, placing the optical switch array 6 in the path of the rotated reflected laser beam, and adjusting the position and angle of the optical switch array to make each laser beam incident on the optical switch array be positioned at the center of each optical switch unit of the optical switch array as shown in fig. 18 b;
(6) removing the visible light splitting prism, and placing a parallel flat plate beam splitter, a grid mesh film beam splitter or a grid strip film beam splitter at the position of the visible light splitting prism; because the flat plate beam splitter, the grid mesh film beam splitter or the grid strip film beam splitter works in an infrared band and only reflects and does not transmit the visible laser array, the flat plate beam splitter, the grid mesh film beam splitter or the grid strip film beam splitter is adjusted by utilizing a reflection light path. For the parallel flat plate beam splitter, the position and the angle of the parallel flat plate beam splitter are adjusted, so that each laser beam reflected to the transverse step phase reflector is positioned on the central line of the long axis of each row of reflector units, and the light beam reflected by the transverse step phase reflector returns along the original path. For the grid film beam splitter, the position and the angle of the grid film beam splitter are adjusted, so that each laser beam of the laser array is incident to the central position of each beam splitting window of the grid film beam splitter, meanwhile, the light beam reflected to the transverse step phase reflector is positioned on the central line of the long axis of each row of reflector units, and the light beam reflected by the transverse step phase reflector returns along the original path. For the grating film beam splitter, by adjusting the position and angle of the grating film beam splitter, the laser beams of each row of the laser array are incident to the central line position of the long axis of each beam splitting window of the grating film beam splitter, and simultaneously, the light beams reflected to the transverse step phase mirrors are positioned on the central lines of the long axes of each row of the mirror units, and the light beams reflected by the transverse step phase mirrors return along the original path, as shown in fig. 18 c.
(7) The collimating mirror is placed in the front light path, and the collimating mirror transmits infrared rays and reflects visible light, so that the laser array is symmetrically distributed on the surface of the collimating mirror by utilizing the characteristic and adjusting the position and the angle of the collimating mirror, and laser beams reflected by the surface of the collimating mirror are also distributed in an array on the source plane of the laser array, so that the optical axis of the collimating mirror is ensured to be horizontal, as shown in fig. 18 d.
(8) And removing the laser array, placing the infrared light source in front of the collimating mirror, and adjusting the position of the infrared light source to enable the infrared light source to be positioned on the object focus of the collimating mirror.
(9) The infrared camera is placed behind the optical switch array, the infrared light source is turned on, and all the optical switch cells of the optical switch array are set to an "on" state, the position of the infrared camera is adjusted so that of the two step phase mirrors can be clearly imaged on the area array detector of the infrared camera, then the axial translation position of the other step phase mirrors is adjusted, and observed with the infrared camera until an interference image appears, as shown in fig. 18 e.
(10) The infrared camera is removed, the focusing mirror is placed behind the optical switch array, the infrared area array detector is placed on the image focal plane of the focusing mirror, and the light beams in the on states of the optical switch units are all focused on the central position of the infrared area array detector by adjusting the position and the angle of the focusing mirror, as shown in fig. 18 f.
(11) And removing the infrared area array detector, placing the single-point detector on the focal plane of the focusing mirror, and adjusting the position of the single-point detector to fix each device when the output signal of the detector is maximum, so as to complete the system integration manufacture, as shown in fig. 18 g.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Insofar as the function is unchanged, the interference spectrometer based on the optical switch array can be modified or changed in other different forms on the basis of the above description of the basic elements thereof without going beyond the scope of the present disclosure, and all embodiments need not be exhaustive. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (9)
1. The interference spectrometer based on the optical switch array comprises a collimating mirror (2), a beam splitter (3), a transverse step phase reflector (4), a longitudinal step phase reflector (5), an optical switch array (6), a focusing mirror (7) and a point detector (8), wherein a light beam emitted by a light source (1) is emitted to form a parallel light beam after passing through the collimating mirror (2), the parallel light beam is reflected by the beam splitter (3) and then enters the transverse step phase reflector (4), the light beam transmitted by the beam splitter enters the longitudinal step phase reflector (5), and the transverse step phase reflector (4) and the longitudinal step phase reflector (5) respectively perform spatial distributed phase modulation on the incident light beam and then interfere with the incident light beam through the beam splitter (3) again to form an interference light field array; the interference light field array is incident on the optical switch array (6), each optical switch unit in the optical switch array (6) receives each interference light field unit in the interference light field array in a stepping mode, and the interference light field units are converged on a point detector (8) through a focusing mirror (7), so that an interference light intensity sampling sequence is obtained; it is characterized in that;
the transverse step phase reflector (4) and the longitudinal step phase reflector (5) divide an incident light field into a plurality of light field units, and each light field units correspond to row reflector units of the transverse step phase reflector (4) and column reflector units of the longitudinal step phase reflector (5), each row reflector unit on the transverse step phase reflector (4) corresponds to phase modulation amounts, each column reflector unit on the longitudinal step phase reflector (5) corresponds to another phase modulation amounts, when the transverse step phase reflector (4) interferes with the light field reflected by the longitudinal step phase reflector (5), the interference light field corresponding to each row reflector unit on the transverse step phase reflector (4) and each column reflector unit on the longitudinal step phase reflector (5) has phase difference, an emergent light field is a light field interference light field with spatial phase difference distribution, and each interference array unit corresponds to different phase differences;
the emergent interference light field array is incident on a light switch array (6), each light switch unit in the light switch array (6) corresponds to interference light field units in the interference light field array, when light switch units on the light switch array (6) are in an open circuit state, an incident light field and the interference light field unit corresponding to the light switch unit pass through, and are received by a point detector (8) through a focusing mirror (7);
setting a transverse step phase reflector (4) to have M row reflector units, the width of each row reflector unit is a, setting a longitudinal step phase reflector (5) to have N column reflector units, the width of each column reflector unit is b, the size of each optical switch unit in an optical switch array (6) is s multiplied by t, the number of the optical switch arrays (6) is K multiplied by L, each optical switch unit of the optical switch array (6) corresponds to each interference light field unit of the interference light field array, setting the size of each optical switch unit in the optical switch array (6) to satisfy the relation that s is less than or equal to a, t is less than or equal to b, and the array number of the optical switch array (6) to satisfy K is greater than or equal to M, and L is greater than or equal to N;
setting the wavelength of light waves of an incident light field to be lambda, the size of a point detector (8) to be c multiplied by d, the size of a diffuse spot on the point detector (8) to be 2 lambda f/s multiplied by 2 lambda f/t, and the size of a photosensitive surface of the point detector (8) to meet the requirement
f is the focal length of the focusing mirror (7);
the beam splitter (3) is a light beam splitter with a grid edge structure and comprises grid edges, beam splitting windows and beam splitting films, the grid edges divide the beam splitter spatially to form a beam splitting window array, the beam splitting films are positioned on the upper surfaces of the beam splitting windows or the upper surfaces of the beam splitting windows and the grid edges, and the grid edges support the beam splitting films;
the width of the grid edges in the grid beam splitter in the transverse direction being that of the grid edges in the longitudinal direction
The width of the beam-splitting window in the transverse direction being greater than that in the longitudinal direction
The duty ratios of the beam splitting windows in the transverse direction and the longitudinal direction are the same;
the width range of the grid edge in the grid mesh beam splitter is 1nm-100cm, and the width range of the beam splitting window is 1nm-100 cm; the thickness range of the grid edges is 1nm-100cm, and the thickness range of the beam splitting window is 1nm-100 cm;
the cross section structure of the grid edges in the grid mesh beam splitter is a single-sided rectangle, a single-sided parallelogram, a single-sided trapezoid, a double-sided rectangle, a double-sided parallelogram or a double-sided trapezoid;
the manufacturing method of the interference spectrometer based on the optical switch array adopts a method of combining visible laser array calibration and infrared camera observation to carry out system integration, and is characterized by comprising the following steps:
, calibrating the system optical axis by using a visible laser array, wherein the laser array has the same row number M as the transverse step phase reflector and the same column number N as the longitudinal step phase reflector, the horizontal distance of each laser unit of the laser array is equal to the unit width b of the longitudinal step phase reflector, the vertical distance of each laser unit of the laser array is equal to the unit width a of the transverse step phase reflector, and the optical axes of the laser array are parallel by adjusting the position and the angle of a laser array source;
inserting pieces of 45-degree visible light splitting prisms into a light path, wherein the visible light splitting prisms divide the laser array light beam into two paths, the positions and the angles of the splitting prisms are adjusted to enable the transmitted laser beam to be collinear with the laser array light beam, and the reflected laser beam to be perpendicular to the laser array light beam;
placing a transverse step phase reflector (4) in a light path of a reflection laser array, and enabling each row of laser beams in the light path of the reflection laser array to be incident on the central line of a long axis of each row of reflector units of the transverse step phase reflector by adjusting the position and the angle of the transverse step phase reflector, and enabling the light beams incident on the transverse step phase reflector to return along the original path, so that the transverse step phase reflector is vertical to the optical axis of the laser array;
a longitudinal step phase reflector (5) is placed in a light path of a transmission laser array, each row of laser beams in the light path of the transmission laser array are made to be incident on the central line of a long axis of each row of reflector units of the longitudinal step phase reflector by adjusting the position and the angle of the longitudinal step phase reflector, and the light beams incident on the longitudinal step phase reflector return along the original path, so that the optical axis of the longitudinal step phase reflector and the optical axis of the laser array are collinear;
rotating the visible light beam splitter prism by 90 degrees, turning the reflected laser beams by 180 degrees, placing the optical switch array (6) in the optical path of the rotated reflected laser beams, and enabling each laser beam incident on the optical switch array to be positioned at the central position of each optical switch unit of the optical switch array by adjusting the position and the angle of the optical switch array;
removing the visible light splitting prism, and placing the beam splitter at the position of the visible light splitting prism; by adjusting the position and the angle of the beam splitter, each laser beam reflected to the transverse step phase reflector is positioned on the central line of the long axis of each row of reflector units, and the light beam reflected by the transverse step phase reflector returns along the original path;
placing the collimating mirror (2) in a front light path, and adjusting the position and the angle of the collimating mirror to ensure that the laser array is symmetrically distributed on the surface of the collimating mirror, and laser beams reflected by the surface of the collimating mirror are also distributed in an opposite array on a laser array source plane, so that the optical axis of the collimating mirror is ensured to be horizontal;
removing the laser array, placing the infrared light source in front of the collimating mirror (1), and enabling the infrared light source to be located on an object focus of the collimating mirror by adjusting the position of the infrared light source;
placing the infrared camera on the optical switch array (6), turning on an infrared light source, setting all optical switch units of the optical switch array to be in an on state, adjusting the position of the infrared camera to enable of the two step phase reflectors to clearly image on an area array detector of the infrared camera, then adjusting the axial translation positions of the other step phase reflectors, and observing by adopting the infrared camera until an interference image appears;
removing the infrared camera, placing the focusing mirror (7) behind the optical switch array (6), placing the infrared area array detector on an image focal plane of the focusing mirror (7), and enabling the light beams in the on states of the optical switch unit to be focused on the central position of the infrared area array detector by adjusting the position and the angle of the focusing mirror (7);
and step ten, removing the infrared area array detector, placing the point detector (8) on a focal plane of the focusing mirror (7), adjusting the position of the point detector (8), and fixing each device when the output signal of the point detector is maximum to complete system integration.
2. The optical switch array based interference spectrometer of claim 1, wherein; the beam splitter is manufactured by adopting an ultra-precise machining method and an MOEMS technology;
the preparation method comprises cutting, grinding and polishing on a substrate to obtain grid edges and beam splitting windows, and evaporating beam splitting film to complete device preparation;
the preparation of the beam splitter by adopting the MOEMS technology is realized by the following steps:
, selecting monocrystalline silicon as a substrate, and preparing a masking film on the surface of the monocrystalline silicon;
step two, directional photoetching is carried out, the masking film in the side groove graph is removed through an etching method, and the side groove graph is exposed; etching the side groove by using the monocrystalline silicon anisotropic etching solution, wherein the etching depth of the side groove is equal to the final thickness of the beam splitting window;
step three, carrying out second photoetching, removing the masking film in the beam splitting window graph through etching, and exposing the beam splitting window graph; adopting monocrystalline silicon anisotropic etching liquid to etch the side groove and the beam splitting window simultaneously, wherein the etching depth is up to the etching thickness of the side groove being 0, and the beam splitting window reaches the final thickness;
and step four, removing the masking film on the surface of the grid edge, and integrally evaporating the beam splitting film to finish the preparation of the beam splitter.
3. The optical switch array based interference spectrometer of claim 1, wherein;
the phase modulation formula of the transverse step phase reflector (4) and the longitudinal step phase reflector (5) to the light field is as follows:
the amplitude modulation formula of the optical switch array (6) to the incident light field is as follows:
and each optical switch unit on the optical switch array (6) is sequentially opened and closed according to a spatial phase difference arrangement sequence, so that each interference optical field unit in the interference optical field array sequentially passes through the optical switch array (6) according to the phase difference sequence and is converged on a point detector (8) by a focusing mirror (7) to be sequentially received, and an interference light intensity sampling sequence is obtained.
4. The optical switch array based interference spectrometer of claim 1, wherein;
the transverse step phase reflector (4) and the longitudinal step phase reflector (5) are both composed of a plurality of reflector units, the flatness of each reflector unit is less than or equal to lambda/20, the surface roughness is less than or equal to 3nm, the thickness h of each reflector unit is less than or equal to lambda/4, each reflector units correspond to thickness values, the reflector units with different thicknesses are sequentially arranged into a step structure, the step thickness increment of each reflector unit in the transverse step phase reflector (4) is h, and the step thickness increment of each reflector unit of the longitudinal step phase reflector (5) is Mh.
5. The optical switch array based interference spectrometer of claim 1, wherein; setting the wave number of the optical wave as v, when the nth step phase reflector (5) is used0M-th of column mirror unit and transverse step phase mirror0When the row mirror units are overlapped in a mirror image mode relative to the beam splitter (3), the phase difference between the nth row mirror unit of the longitudinal step phase mirror and the (m, n) th interference light field unit corresponding to the mth row mirror unit of the transverse step phase mirror is 4 pi v (nM-m-n)0M+m0)h。
6. The optical switch array based interference spectrometer of claim 1, wherein only optical switch cells are on at a particular time in the optical switch array , and the remaining optical switch cells are off.
7. The optical switch array-based interference spectrometer of claim 1, wherein the on state of the (m, n) th optical switch cell in the optical switch array transmits the (m, n) th interference optical field cell corresponding to the m-th row mirror cell of the transverse step phase mirror and the n-th column mirror cell of the longitudinal step phase mirror, and the off state of the rest of the optical switch cells blocks the rest of the interference optical field cells.
8. The optical switch array based interference spectrometer of claim 1, wherein the aperture of the focusing mirror (7) matches the apertures of the step phase reflector and the optical switch array, i.e. the aperture Φ of the focusing mirror (7) satisfies
9. The method for manufacturing an interference spectrometer based on an optical switch array according to claim 1, wherein the system integration is performed by a method combining visible laser array calibration and infrared camera observation, and the method is implemented by the following steps:
, calibrating the system optical axis by using a visible laser array, wherein the laser array has the same row number M as the transverse step phase reflector and the same column number N as the longitudinal step phase reflector, the horizontal distance of each laser unit of the laser array is equal to the unit width b of the longitudinal step phase reflector, the vertical distance of each laser unit of the laser array is equal to the unit width a of the transverse step phase reflector, and the optical axes of the laser array are parallel by adjusting the position and the angle of a laser array source;
inserting pieces of 45-degree visible light splitting prisms into a light path, wherein the visible light splitting prisms divide the laser array light beam into two paths, the positions and the angles of the splitting prisms are adjusted to enable the transmitted laser beam to be collinear with the laser array light beam, and the reflected laser beam to be perpendicular to the laser array light beam;
placing a transverse step phase reflector (4) in a light path of a reflection laser array, and enabling each row of laser beams in the light path of the reflection laser array to be incident on the central line of a long axis of each row of reflector units of the transverse step phase reflector by adjusting the position and the angle of the transverse step phase reflector, and enabling the light beams incident on the transverse step phase reflector to return along the original path, so that the transverse step phase reflector is vertical to the optical axis of the laser array;
a longitudinal step phase reflector (5) is placed in a light path of a transmission laser array, each row of laser beams in the light path of the transmission laser array are made to be incident on the central line of a long axis of each row of reflector units of the longitudinal step phase reflector by adjusting the position and the angle of the longitudinal step phase reflector, and the light beams incident on the longitudinal step phase reflector return along the original path, so that the optical axis of the longitudinal step phase reflector and the optical axis of the laser array are collinear;
rotating the visible light beam splitter prism by 90 degrees, turning the reflected laser beams by 180 degrees, placing the optical switch array (6) in the optical path of the rotated reflected laser beams, and enabling each laser beam incident on the optical switch array to be positioned at the central position of each optical switch unit of the optical switch array by adjusting the position and the angle of the optical switch array;
removing the visible light splitting prism, and placing the beam splitter at the position of the visible light splitting prism; by adjusting the position and the angle of the beam splitter, each laser beam reflected to the transverse step phase reflector is positioned on the central line of the long axis of each row of reflector units, and the light beam reflected by the transverse step phase reflector returns along the original path;
placing the collimating mirror (2) in a front light path, and adjusting the position and the angle of the collimating mirror to ensure that the laser array is symmetrically distributed on the surface of the collimating mirror, and laser beams reflected by the surface of the collimating mirror are also distributed in an opposite array on a laser array source plane, so that the optical axis of the collimating mirror is ensured to be horizontal;
removing the laser array, placing the infrared light source in front of the collimating mirror (1), and enabling the infrared light source to be located on an object focus of the collimating mirror by adjusting the position of the infrared light source;
placing the infrared camera on the optical switch array (6), turning on an infrared light source, setting all optical switch units of the optical switch array to be in an on state, adjusting the position of the infrared camera to enable of the two step phase reflectors to clearly image on an area array detector of the infrared camera, then adjusting the axial translation positions of the other step phase reflectors, and observing by adopting the infrared camera until an interference image appears;
removing the infrared camera, placing the focusing mirror (7) behind the optical switch array (6), placing the infrared area array detector on an image focal plane of the focusing mirror (7), and enabling the light beams in the on states of the optical switch unit to be focused on the central position of the infrared area array detector by adjusting the position and the angle of the focusing mirror (7);
and step ten, removing the infrared area array detector, placing the point detector (8) on a focal plane of the focusing mirror (7), adjusting the position of the point detector (8), and fixing each device when the output signal of the point detector is maximum to complete system integration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711380932.3A CN108120504B (en) | 2017-12-20 | 2017-12-20 | Interference spectrometer based on optical switch array and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711380932.3A CN108120504B (en) | 2017-12-20 | 2017-12-20 | Interference spectrometer based on optical switch array and manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108120504A CN108120504A (en) | 2018-06-05 |
| CN108120504B true CN108120504B (en) | 2020-01-31 |
Family
ID=62230503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711380932.3A Active CN108120504B (en) | 2017-12-20 | 2017-12-20 | Interference spectrometer based on optical switch array and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108120504B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020204734A (en) * | 2019-06-18 | 2020-12-24 | パナソニックＩｐマネジメント株式会社 | Light source device |
| CN111947780B (en) | 2020-07-30 | 2022-12-06 | 上海交通大学 | Fourier transform spectrometer on silicon substrate and spectrum reconstruction method |
| CN115014528B (en) * | 2022-07-12 | 2024-09-06 | 中国科学院长春光学精密机械与物理研究所 | Micro-modulation interference spectrometer and measuring method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913227A (en) * | 2014-03-10 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Infrared imaging spectrometer based on light beam splitter and manufacturing method |
| CN104006884A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatial modulation spectrometer based on grid beam splitter and manufacturing method |
| CN104006885A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatio-temporal union modulation Fourier-transformation imaging spectrometer and manufacturing method |
-
2017
- 2017-12-20 CN CN201711380932.3A patent/CN108120504B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913227A (en) * | 2014-03-10 | 2014-07-09 | 中国科学院长春光学精密机械与物理研究所 | Infrared imaging spectrometer based on light beam splitter and manufacturing method |
| CN104006884A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatial modulation spectrometer based on grid beam splitter and manufacturing method |
| CN104006885A (en) * | 2014-03-10 | 2014-08-27 | 中国科学院长春光学精密机械与物理研究所 | Spatio-temporal union modulation Fourier-transformation imaging spectrometer and manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 微小型傅里叶变换光谱仪光场分析与衍射抑制;吕金光 等;《光学学报》;20161130;第36卷(第11期);第2节，图1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108120504A (en) | 2018-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108120504B (en) | Interference spectrometer based on optical switch array and manufacturing method | |
| López et al. | Planar-lens enabled beam steering for chip-scale LIDAR | |
| CN108168704B (en) | Infrared polarization interference imaging spectrometer based on double-period step phase reflector | |
| US7265834B2 (en) | Polarization analyzer | |
| KR20210074373A (en) | Reflective meta-surface primary mirror, secondary mirror and telescope system | |
| JP2022519015A (en) | Linear polarization conversion element, manufacturing method and linear polarization conversion system | |
| US20220050225A1 (en) | Metasurface primary lens and metasurface secondary lens, manufacturing method thereof, and optical system | |
| CN107003513A (en) | Optical beam scanner | |
| CN108180992B (en) | Snapshot imaging spectrometer based on micro imaging mirror array and step phase reflector | |
| CN108168703B (en) | Fourier transform spectrometer based on optical switch array and manufacturing method | |
| US20220171282A1 (en) | Diffractive optical element fabrication | |
| CN108180993B (en) | infrared polarization interference imaging spectrometer and manufacturing method thereof | |
| CN108106731B (en) | Snapshot imaging spectrometer based on step phase reflector and manufacturing method | |
| CN108151878B (en) | Snapshot imaging spectrometer based on micro imaging mirror array and array phase reflecting mirror | |
| CN106986299B (en) | Optical right-angle reflector and manufacturing method thereof | |
| CN107917759B (en) | Polarization interference imaging spectrometer and production method based on stepped phase reflecting mirror | |
| TWI489142B (en) | Optical wavelength dispersion device and method of manufacturing the same | |
| CN108120505A (en) | Infrared interferometer based on stepped phase speculum and array of photoswitch | |
| CN108151880B (en) | Based on array phase reflecting mirror snapshot imaging spectrometer and production method | |
| CN110274693B (en) | Polarization detection device | |
| US11714330B2 (en) | Phase-combining waveguide doubler for optical phased array in solid-state lidar applications | |
| US20210271148A1 (en) | High-Efficiency End-Fire 3D Optical Phased Array Based On Multi-Layer Platform | |
| CN108132542B (en) | Light beam splitter with grid edge structure and manufacturing method | |
| CN108106730B (en) | Infrared polarization interference imaging spectrometer based on half-step half-plane phase reflector | |
| Ishikawa et al. | 12-inch X-ray optics based on MEMS process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |