CN108140630B - 具有垂直连接器的集成电路芯片 - Google Patents
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Abstract
在所描述实例中,一种集成电路IC芯片(50)可包含具有导电耦合到引线框(56)的互连件的裸片(58),其中所述引线框(56)形成所述IC芯片(50)的给定表面的部分。所述IC芯片(50)还可包含模制在所述裸片(58)及所述引线框(56)上的囊封材料(57)。所述囊封材料(57)可形成所述IC芯片(50)的另一表面。所述IC芯片(50)的所述另一表面与所述IC芯片的所述给定表面相对。所述IC芯片(50)可进一步包含沿基本上垂直于所述IC芯片(50)的所述给定表面的方向延伸穿过所述囊封材料(57)的垂直导线(54),且所述垂直导线(54)突出穿过所述IC芯片(50)的所述另一表面以形成用于所述IC芯片(50)的垂直连接器(52)。所述垂直连接器(52)可耦合到所述裸片(58)上的所述互连件。
Description
技术领域
本发明大体上涉及一种具有垂直连接器的集成电路(IC)芯片,且更具体来说,涉及一种具有由垂直导线形成的垂直连接器的IC芯片。
背景技术
电子封装(或简称“封装”)可指内建到电子产品(例如集成电路(IC)芯片)中的外壳及保护性特征。电子封装适用于终端产品及组件两者。电子系统的封装必须考虑防止机械损坏、冷却、射频噪音发射、静电放电保护、维护、操作员便利性及成本。半导体封装可为含有一或多个半导体电子组件的金属、塑料、玻璃或陶瓷壳体。在封装中切割及组装之前,通常在硅晶片中蚀刻个别离散组件。封装防止碰撞及腐蚀且耗散装置中产生的热量。
扁平无引线封装(例如四边扁平无引线(QFN)、双边扁平无引线(DFN))将IC芯片物理连接且电连接到衬底,例如印刷电路板(PCB)。扁平无引线,也称为微引线框(MLF)及SON(小型无引线),是一种表面安装技术,是在无通孔的情况下将IC连接到PCB的表面的若干封装技术中的一者。扁平无引线是使用平面铜引线框衬底制成的近芯片级封装的塑料囊封封装。封装底部上的外围引线可提供与PCB的电连接。扁平无引线封装包含暴露热焊盘以改善从IC(到PCB中)的热传递。可由热焊盘中的金属通路进一步促进热传递。
发明内容
在所描述实例中,一种集成电路(IC)芯片可包含具有导电耦合到引线框的互连件的裸片。所述引线框形成所述IC芯片的给定表面的部分。所述IC芯片还可包含模制在所述裸片及所述引线框上的囊封材料。所述囊封材料可形成所述IC芯片的另一表面。所述IC芯片的所述另一表面与所述IC芯片的所述给定表面相对。所述IC芯片可进一步包含沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述囊封材料的垂直导线,且所述垂直导线突出穿过所述IC芯片的所述另一表面以形成用于所述IC芯片的垂直连接器。所述垂直连接器可耦合到所述裸片上的所述互连件。
另一实例涉及一种可包含IC芯片的电路。所述IC芯片可包含具有导电耦合到引线框的互连件的裸片。所述引线框形成所述IC芯片的给定表面的部分。所述IC芯片还可包含给定垂直导线及另一垂直导线,每一垂直导线沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述IC芯片的囊封材料。所述给定垂直导线及所述另一垂直导线可在所述IC芯片的另一表面处突出穿过所述囊封材料以形成用于所述IC芯片的相应给定垂直连接器及另一垂直连接器。所述给定垂直连接器及所述另一垂直连接器可耦合到所述裸片的所述互连件上的不同点。所述电路还可包含表面安装技术(SMT)组件,所述SMT组件粘附到所述IC芯片且导电耦合到所述给定垂直连接器及所述另一垂直连接器以在所述裸片的所述互连件上的所述不同点之间形成电流路径。
又一实例涉及另一集成电路(IC)芯片。所述IC芯片可包含具有导电耦合到引线框的互连件的裸片。所述引线框形成所述IC芯片的给定表面的部分,且所述裸片可包含面对所述引线框的有源表面。所述IC芯片还可包含模制在所述裸片及所述引线框上的囊封材料。所述囊封材料形成所述IC芯片的另一表面。所述IC芯片的所述另一表面可与所述IC芯片的所述给定表面相对。所述IC芯片可进一步包含沿基本上垂直于所述IC芯片的所述给定表面的方向从所述引线框上的特定引线延伸的垂直导线。所述垂直导线可延伸穿过所述囊封材料以形成垂直连接器。所述引线框的所述特定引线还可耦合到所述IC芯片的互连件。
再一实例涉及一种IC芯片,所述IC芯片可包含具有导电耦合到引线框的给定互连件的给定裸片。所述引线框形成所述IC芯片的给定表面的部分。所述IC芯片还可包含具有导电耦合到所述引线框的另一互连件的另一裸片。所述IC芯片可进一步包含模制在所述裸片及所述引线框上的囊封材料,所述囊封材料形成所述IC芯片的另一表面。所述IC芯片的所述另一表面与所述IC芯片的所述给定表面相对。所述IC芯片还可进一步包含沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述囊封材料的给定垂直导线及另一垂直导线,且所述给定垂直导线及所述另一垂直导线突出穿过所述IC芯片的所述另一表面以形成用于所述IC芯片的相应给定垂直连接器及另一垂直连接器。所述给定垂直连接器可耦合到所述给定裸片上的所述给定互连件,且所述另一垂直连接器可耦合到所述另一裸片上的所述另一互连件。
附图说明
图1说明具有垂直连接器的集成电路(IC)芯片的实例。
图2说明具有垂直连接器的IC芯片的另一实例。
图3说明耦合到外部组件的图2的IC芯片的实例。
图4说明耦合到外部组件的图2的IC芯片的另一实例。
图5说明耦合到外部组件的图2的IC芯片的又一实例。
图6说明图5的IC芯片的另一视图。
图7说明具有垂直连接器的IC芯片的又一实例。
图8说明垂直连接器耦合到外部组件的IC芯片的再一实例。
图9说明用于形成IC芯片的膜辅助模具的实例。
图10说明IC芯片的多个垂直连接器的图。
具体实施方式
集成电路(IC)芯片可包含结合膜辅助模具以在IC芯片(或封装)(包含扁平无引线封装,例如四边扁平无引线(QFN)封装或双边扁平无引线(DFN)封装)中形成垂直连接器(例如,垂直连接点)的垂直导线。垂直导线可经由标准导线结合平台(包含带结合技术)而放置且可从IC芯片的裸片表面或从引线框引线延伸,穿过模制化合物,且暴露在与IC芯片的引线框相对的表面处,所述表面可简称为相对表面(或“顶部”表面)。
此外,可将焊球或焊膏施加到暴露导线,从而使更大面积能够用于表面安装技术(SMT)。而且,在一些实例中,这个焊膏或焊球可为无铅(Pb)的(例如导电环氧树脂),由此降低二次回流过程的影响。在形成垂直连接器之后,可通过在制造IC芯片时或在另一装置中安装IC芯片时使用表面安装技术(SMT)技术而将所要组件(或多个组件)粘附到IC芯片的相对侧。
图1说明IC芯片50的实例,其可用以实施垂直连接器52(例如,垂直连接点)以将外部组件连接到IC芯片50。垂直连接器52可为垂直导线54的组件,所述垂直导线54沿远离引线框56的方向延伸且从IC芯片50的囊封材料57的相对表面突出以形成垂直连接器52。如本文中所使用,术语“垂直导线”(包含垂直导线54)表示沿相对于形成IC芯片50的表面(例如,IC芯片50的“底部”表面)的引线框56的表面正交(例如,垂直)的方向延伸的导线。
IC芯片50的引线框56可将来自裸片58上的互连件上的点的信号载送到在IC芯片50外部的组件。引线框56可由金属(例如铜或金)形成。裸片58可形成为制造IC芯片50的给定功能电路的半导体材料块(例如,硅)。在一些实例中,垂直导线54可直接导电连接到裸片58。在其它实例中,垂直导线54可经由导线结合或引线框56上的引线导电耦合到裸片58。
图2说明可用以实施图1的IC芯片50的IC芯片100的实例。IC芯片100包含具有垂直连接器104的垂直导线102,所述垂直连接器104延伸超出IC芯片100的囊封材料106的边界。
举例来说,囊封材料106可为塑料或类似的惰性且非导电材料。IC芯片100的给定表面105(例如,“底部”)可包含引线框108。因此,引线框108可形成给定表面105或其某个部分。在图2中所说明的实例中,引线框108是由多个部分形成。在图2中所说明的实例中,引线框108包含暴露裸片焊盘110及引线112。引线框108可具有许多引线(例如,高达约100个),所述引线在将IC芯片100安装于电路中之后通过给定表面105耦合到其它装置。举例来说,暴露裸片焊盘110可耦合到散热器。裸片114可经由裸片结合材料116安装在暴露裸片焊盘110上。裸片结合材料116可为导热但电绝缘的材料,例如热膏。引线112(及引线框108的其它部分)可由导电材料(例如铜或金)形成。
导线结合118在有源表面115上的互连件、裸片114与引线112之间形成导电路径。在图2所说明的实例中,裸片114具有背对引线框108的有源表面(互连件上具有点的表面)。垂直导线102可安装在引线框108的引线112上。在一些实例中,垂直导线102可经定位以使用标准导线结合平台(包含带结合技术)终止在引线112上。此外,可形成垂直导线102以补偿由囊封材料106的固化引起的导线偏移。此外,可使用模制过程(例如,膜辅助模制)形成垂直导线102的垂直连接器104,所述模制过程可避免蚀刻及/或磨去囊封材料106的部分的需要。垂直导线102可从引线112的给定表面105垂直延伸(例如,沿基本上垂直的方向),穿过囊封材料106,使得垂直连接器104暴露在与引线框108的表面相对的表面处,所述表面可称为相对表面120(或“顶部”表面)。可通过处理技术(例如膜辅助模制)形成垂直导线102。外部组件(例如离散无源电路组件(例如,相对大电感器或电容器)或另一IC芯片100(例如,数字电路组件))可按本文中所描述的方式耦合到垂直连接器104。
图3及4描绘在不同电路中实施的图2的IC芯片100的特定实例。出于简化解释的目的,在图2到4中使用相同参考数字来表示相同结构。IC芯片100耦合到安装在(例如粘附到)IC芯片100上的外部SMT组件122。SMT组件122可为相对高功率的无源组件,例如电感器。SMT组件122可包含耦合到IC芯片100的垂直连接器104的连接器124。此外,焊膏126可施加到垂直连接器104以经由垂直导线102、引线框108的引线112及导线结合118将SMT组件122导电耦合到裸片114。在图3中,仅说明SMT组件122的部分。在一些实例中,可包含SMT组件122的另一连接器,其可连接到IC芯片100上的另一裸片(例如,从图3中所说明的视角隐去的裸片)。
图4说明与图3类似的配置。然而,使用预沉积焊球128来代替焊膏126。而且,在图4中,第二导线结合130可通向引线框108的第二引线132。第二引线132可使用第二垂直连接器136耦合到第二垂直导线134。第二焊球138可粘附到第二垂直连接器136。此外,第二垂直连接器136可耦合到SMT组件122的第二连接器140。因此,在图4中所说明的IC芯片100的配置中,可通过SMT组件122在裸片114的互连件上的不同点(连接到导线结合118及130)之间形成全电流路径。
图5说明图2的IC芯片100的另一特定实例。出于简化解释的目的,在图2到5中使用相同参考数字来表示相同结构。在图5中,IC芯片100耦合到外部高功率组件142。举例来说,高功率组件142可为变压器。高功率组件142可包含大表面连接器144,例如通向变压器的引线。如本文中所使用,大表面连接器可传导高功率信号(例如,高达约100瓦(W))。
在图5中所说明的实例中,垂直连接器104可连接到横杆145以形成高功率连接件147。高功率连接件147还可包含后退部分146,所述后退部分146可在一些实例中导回到引线框108的第二引线132。在其它实例中,后退部分146可终止在未到达第二引线132处。以这种方式,高功率连接件147(包含垂直导线102、横杆145及后退部分146)可形成'U'或“钉”形状以增大表面积(与垂直连接器104自身相比)以对高功率组件142提供足够电流及电压。高功率连接件147的横杆145、垂直连接器104及后退部分146(或其一些部分)可为支持高功率(例如,高达约100W)的带结合导线。与图3类似,在图5中,仅说明高功率组件142的部分。在一些实例中,可包含高功率组件142的另一连接器,其可连接到IC芯片100上的另一裸片(例如,从图5中所说明的视角隐去的裸片)。或者,高功率组件142的另一连接器可按与关于图4所说明的配置类似的方式连接到裸片114的互连件上的另一点。
在IC芯片100的一些实例中,可包含多个平行(或偏移)垂直导线。举例来说,在图5中,可包含高功率连接器147的额外个例,所述额外个例从图5的说明隐去。另外或替代地,还可包含IC芯片100的其它组件的多个个例,例如裸片114。图6从相对表面120(无高功率组件)的视角说明图5的IC芯片100的实例,其可称为“俯视”图。
在图6中,在IC芯片100上包含给定裸片180及另一裸片182。而且,介入裸片183可经定位于给定裸片与另一裸片182之间。给定裸片180及另一裸片182中的每一者可实施为裸片114的个例。给定裸片180及另一裸片182可分别连接到引线184及186(其可为引线112的个例)。而且,每一引线184及186可分别连接到一组两(2)个电源连接器188及190。在图6中所说明的实例中,交错裸片183未连接到电源连接器。所述组电源连接器188及190中的每一电源连接器可为图5的电源连接器147的个例。包含所述组电源连接器188及190可进一步增大由IC芯片100支持的功率。在其它实例中,更多或更少电源连接器可包含在每一组电源连接器188及190中。
在一些实例中,组件(例如高功率组件142)可耦合在所述组电源连接器188与190之间。以这种方式,给定裸片180及另一裸片182可经由高功率组件通信地耦合。
图7说明实施垂直连接器152的替代配置的图2中所说明的IC芯片100的另一实例。出于简化解释的目的,在图2及6中使用相同参考数字来表示相同结构。在图7中,垂直导线154直接连接到裸片114的有源表面115上的互连件上的点。而且,垂直导线154从囊封材料106突出以形成垂直连接器152。以这种方式,引线112经释放以连接到另一组件(或连接到另一垂直连接器)。例如在IC芯片100连接到具有相对小表面积(例如小占用面积)的外部组件的情况下,可使用图7中所说明的配置。因此,在外部组件适配(或接近适配)在由假想线A-A界定的边界(暴露裸片焊盘110的边界)内的情况下,可使用图7的IC芯片100。
再次参考图2,通过使用垂直导线102实施IC芯片100,可实现空间节省。举例来说,可使用先前未用空间,即,与相对表面120相邻(例如,在相对表面120上方)的空间。以这种方式,可容易地实施芯片堆叠。电路封装(例如电力供应器及/或系统级封装(SiP))可受益于具有垂直导线102的IC芯片100的架构。
包含垂直导线102及垂直连接器104可减少或消除使用基于衬底的互连件(例如,印刷电路板(PCB))的昂贵衬底中的嵌入式有源装置来存取外部SMT组件的需要。举例来说,组件可直接安装在IC芯片100上(例如,粘附到IC芯片100)(如图3到5中所说明),使得无需中间衬底(例如,PCB)。另外或替代地,可在具有更多空间或更大扁平无引线组件的带引线封装中实施SiP,其中X/Y空间非常有限。
图8说明可用以实施图1的IC芯片50的IC芯片200的另一替代实例。IC芯片200包含具有垂直连接器204的垂直导线202,所述垂直连接器204延伸超出IC芯片200的囊封材料206的边界。
例如,囊封材料206可为塑料或类似的惰性且非导电材料(例如,与图2到6的囊封材料106类似)。IC芯片200的给定表面207(例如,“底部”表面)可包含引线框208(及/或由引线框208组成)。引线框208可包含多个引线210,所述引线210经由连接材料214耦合到IC芯片200的裸片212上的互连件上的多个对应点。举例来说,连接材料214可实施为焊球或铜柱。
裸片212可具有面对引线框208的有源表面216。因此,裸片的有源表面216背对IC芯片200的表面218(称为相对表面218或“顶部”表面),所述表面218与引线框208相对。以这种方式,可通过使用倒装芯片技术或“热棒”技术而安装裸片114。
垂直导线202可从引线框208的给定引线219沿基本上垂直的方向延伸。给定引线219还可连接到裸片212的特定互连件。给定引线219可经由连接材料214导电连接到裸片212及垂直导线202。垂直导线202突出穿过IC芯片200的相对表面218以形成垂直连接器204。
垂直连接器204可用以在外部组件(包含SMT组件220)与耦合到给定引线219的裸片212的互连件上的点之间提供导电耦合。举例来说,垂直连接器204可耦合到SMT组件220的连接器222(例如,引线)。
倒装芯片(或铜柱)技术可用以制造IC芯片200。而且,IC芯片200可实现与关于图2所说明及所描述的IC芯片100相同或类似的优点。此外,IC芯片200可经修改以适应各种应用环境,包含关于图3到5所说明及所描述的应用环境(例如,全电流路径、高功率外部组件及/或高功率连接件)。
而且,与图3及5类似,在图8中,仅说明SMT组件220的部分。然而,在一些实例中,SMT组件的另一连接器可耦合到IC芯片200上的另一裸片,所述裸片可从图8中所说明的视角隐去。或者,SMT组件220的另一连接器可按与关于图4中所说明的配置类似的方式连接到裸片212的互连件上的另一点。
图9说明在制造多个垂直连接器254期间施加到IC芯片252的膜辅助模具250的部分的实例。膜辅助模具250可用以辅助制造图1的IC芯片50、图2到6的IC芯片100及/或图8的IC芯片150。IC芯片252可包含多个焊球256(或其它连接器)。多个焊球256中的每一者连接到IC芯片252上的互连件的个别点。多个垂直导线258可从IC芯片252延伸,穿过IC芯片252的包覆件260以形成垂直连接器254。
模制膜262可在垂直连接器254上流动,且膜辅助模具250的模制工具264可用以“夹紧”在IC芯片252上以将压力施加到模制膜262。在固化模制膜262之后,即可释放/移除模制工具264,这可致使模制膜262也被移除。仅模制膜262的小保护性涂层(膜)留在垂直导线258的尖端上以形成垂直连接器254。
图10说明在移除膜辅助模具250之后的IC芯片的图。在图10中,说明IC芯片的多个垂直连接器300。再次参考图9,通过使用膜辅助模具250,可在生产制造环境中有效地且重复地形成垂直连接器254而无需昂贵的研磨及/或蚀刻技术。
在本描述中,术语“基于”意指至少部分基于。
在所描述实施例中进行修改是可能的,且在权利要求书的范围内的其它实施例是可能的。
Claims (21)
1.一种集成电路IC芯片,其包括:
裸片,其具有导电耦合到引线框的互连件,其中所述引线框形成所述IC芯片的给定表面的部分;
囊封材料,其模制在所述裸片及所述引线框上,所述囊封材料形成所述IC芯片的另一表面,其中所述IC芯片的所述另一表面与所述IC芯片的所述给定表面相对;及
垂直导线,其沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述囊封材料,且所述垂直导线突出穿过所述IC芯片的所述另一表面以形成用于所述IC芯片的垂直连接器,其中所述垂直连接器耦合到所述裸片上的所述互连件;
其中所述垂直连接器耦合到横杆及后退部分以形成高功率连接器。
2.根据权利要求1所述的IC芯片,其中所述裸片的有源侧背对所述IC芯片的所述给定表面。
3.根据权利要求2所述的IC芯片,其中所述IC芯片是扁平无引线IC芯片。
4.根据权利要求2所述的IC芯片,其中所述垂直导线从所述引线框的引线延伸。
5.根据权利要求4所述的IC芯片,其中导线结合将所述裸片的所述互连件耦合到所述引线框的所述引线。
6.根据权利要求2所述的IC芯片,其中所述裸片热耦合到沿所述IC芯片的所述给定表面延伸的暴露裸片焊盘。
7.根据权利要求1所述的IC芯片,其中所述垂直导线从所述裸片的所述互连件延伸。
8.根据权利要求1所述的IC芯片,其中外部组件耦合到所述垂直连接器。
9.根据权利要求1所述的IC芯片,其中所述高功率连接器呈U形。
10.根据权利要求1所述的IC芯片,其中所述高功率连接器是由带结合形成。
11.根据权利要求1所述的IC芯片,其中所述垂直导线是给定垂直导线,且所述垂直连接器是给定垂直连接器,所述IC芯片进一步包括:
另一垂直导线,其沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述囊封材料,且所述另一垂直导线突出穿过所述IC芯片的所述另一表面以形成用于所述IC芯片的另一垂直连接器,其中所述另一垂直连接器耦合到所述裸片上的所述互连件。
12.根据权利要求11所述的IC芯片,其中在所述IC芯片外部的电路组件耦合到所述给定垂直导线及所述另一垂直导线。
13.根据权利要求12所述的IC芯片,其中所述电路组件是无源电感器。
14.根据权利要求1所述的IC芯片,其中所述裸片的有源侧面对所述IC芯片的所述给定表面。
15.根据权利要求14所述的IC芯片,其中所述引线框的引线耦合到所述裸片的所述互连件且耦合到所述垂直导线。
16.一种电路,其包括:
集成电路IC芯片,其包括:
裸片,其具有导电耦合到引线框的互连件,其中所述引线框形成所述IC芯片的给定表面的部分;
给定垂直导线及另一垂直导线,其各自沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述IC芯片的囊封材料,且所述给定垂直导线及所述另一垂直导线在所述IC芯片的另一表面处突出穿过所述囊封材料以形成用于所述IC芯片的相应给定垂直连接器及另一垂直连接器,其中所述给定垂直连接器及所述另一垂直连接器耦合到所述裸片的所述互连件上的不同点;
表面安装技术SMT组件,其粘附到所述IC芯片且导电耦合到所述给定垂直连接器及所述另一垂直连接器以在所述裸片的所述互连件上的所述不同点之间形成电流路径;
其中所述给定垂直连接器及所述另一垂直连接器耦合到横杆及后退部分以形成高功率连接器。
17.根据权利要求16所述的电路,其中所述SMT组件是电感器。
18.一种集成电路IC芯片,其包括:
裸片,其具有导电耦合到引线框的互连件,其中所述引线框形成所述IC芯片的给定表面的部分,且所述裸片包括面对所述引线框的有源表面;
囊封材料,其模制在所述裸片及所述引线框上,所述囊封材料形成所述IC芯片的另一表面,其中所述IC芯片的所述另一表面与所述IC芯片的所述给定表面相对;及
垂直导线,其沿基本上垂直于所述IC芯片的所述给定表面的方向从所述引线框上的特定引线延伸,所述垂直导线延伸穿过所述囊封材料以形成垂直连接器,其中所述引线框的所述特定引线还耦合到所述IC芯片的互连件;
其中所述垂直连接器耦合到横杆及后退部分以形成高功率连接器。
19.根据权利要求18所述的IC芯片,其中所述裸片是倒装芯片裸片。
20.一种集成电路IC芯片,其包括:
给定裸片,其具有导电耦合到引线框的给定互连件,其中所述引线框形成所述IC芯片的给定表面的部分;
另一裸片,其具有导电耦合到所述引线框的另一互连件;
囊封材料,其模制在所述裸片及所述引线框上,所述囊封材料形成所述IC芯片的另一表面,其中所述IC芯片的所述另一表面与所述IC芯片的所述给定表面相对;及
给定垂直导线及另一垂直导线,其沿基本上垂直于所述IC芯片的所述给定表面的方向延伸穿过所述囊封材料,且所述给定垂直导线及所述另一垂直导线突出穿过所述IC芯片的所述另一表面以形成用于所述IC芯片的相应给定垂直连接器及另一垂直连接器,
其中所述给定垂直连接器耦合到所述给定裸片上的所述给定互连件,且所述另一垂直连接器耦合到所述另一裸片上的所述另一互连件;
其中所述给定垂直连接器及所述另一垂直连接器耦合到横杆及后退部分以形成高功率连接器。
21.根据权利要求20所述的IC芯片,其进一步包括定位于所述给定裸片与所述另一裸片之间的介入裸片。
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