CN108133958A - Radio frequency triode and preparation method thereof - Google Patents
Radio frequency triode and preparation method thereof Download PDFInfo
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- CN108133958A CN108133958A CN201711397410.4A CN201711397410A CN108133958A CN 108133958 A CN108133958 A CN 108133958A CN 201711397410 A CN201711397410 A CN 201711397410A CN 108133958 A CN108133958 A CN 108133958A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 47
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 42
- 238000007514 turning Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 28
- 150000002500 ions Chemical class 0.000 claims description 26
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910018594 Si-Cu Inorganic materials 0.000 claims description 3
- 229910008465 Si—Cu Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of radio frequency triodes and preparation method thereof.The production method includes：Silicon substrate is provided, form epitaxial layer, silicon dioxide layer and the angular field oxide of tool on the silicon substrate and causes the vertex of wedge angle of the field oxide and the vertex at the turning of the epitaxial layer that there is preset distance；Another silicon dioxide layer is formed again in the epi-layer surface, and another silicon dioxide layer covers the turning of the epitaxial layer and is connected between the field oxide at the epitaxial layer both ends；First time p-type ion implanting is carried out, so as to which the epi-layer surface below another silicon dioxide layer forms p-type doped regions, p-type doped regions upper and lower surface is respectively provided with turning；It is further formed p-type high-doped zone, dielectric layer, first through hole, n-type region, the second through-hole, the first metal portion and the second metal portion.
Description
【Technical field】
The present invention relates to semiconductor fabrication process technical fields, particularly, are related to a kind of radio frequency triode and its making side
Method.
【Background technology】
Existing radio frequency triode, in the sharp corner of field oxide, often has part during place oxide layer is formed
Defect generates.These defects are generated in etching process and in the oxidation process of follow-up field oxide due to silicon nitride layer
's.These defects can cause the breakdown voltage of the related PN junction of position herein the phenomenon that unstable occur.(p-type is low-doped in P- areas
Area) injection when, need to do one layer of photoetching, in order to so that sharp corner of the P- areas far from field oxide, avoids field oxide
Sharp corner the defects of, thus more one layer of photoetching, costs are higher.In addition, because breakdown at curvature is right angle, breakdown
Voltage is easily adversely affected.In addition, because the presence of defect herein, P- areas need the point far from field oxide as possible
At angle, so, a part of chip area is just wasted.Also, the distance of this distance is less susceptible to hold.If distance
Too small, then P- and the affected possibility of breakdown of N-type extension are very big；If distance is too big, chip area waste situation
Seriously.
【Invention content】
For existing radio frequency triode manufacturing process flow and device architecture the problem of, the present invention proposes a kind of new penetrates
Frequency triode and preparation method thereof solves above-mentioned at least one technical problem, and does not increase excessive manufacture cost.
A kind of production method of radio frequency triode, includes the following steps：
Silicon substrate is provided, forms epitaxial layer on the silicon substrate；
Silicon dioxide layer and silicon nitride layer are sequentially formed on said epitaxial layer there；
Photoetching and etching are carried out to the silicon nitride layer, remove the partial nitridation layer at both ends so as to form open area；
The growth of field oxide is carried out to the part of silica layer of the open area and the neighbouring open area, from
And formed between the silicon nitride layer both ends and the epitaxial layer and have angular field oxide, the wedge angle of the field oxide
The silicon dioxide layer of corresponding another part, the epitaxial layer include the turning of the neighbouring field oxide；
Remove the silicon nitride layer and the silicon dioxide layer；
Remove the part field oxide so that the vertex of the wedge angle of the field oxide and the turning of the epitaxial layer
Vertex has preset distance；
Another silicon dioxide layer is formed again in the epi-layer surface, and another silicon dioxide layer covers the extension
The turning of layer is simultaneously connected between the field oxide at the epitaxial layer both ends；
First time p-type ion implanting is carried out, so as to which the epi-layer surface below another silicon dioxide layer forms p-type
Doped regions, p-type doped regions upper and lower surface are respectively provided with turning；
Second of p-type ion implanting is carried out, so as to form p-type high-doped zone on p-type doped regions surface；
Dielectric layer is formed on the field oxide, in another silicon dioxide layer；
First time photoetching and etching are carried out to the dielectric layer, so as to be formed through the dielectric layer and the corresponding p-type
The first through hole of doped regions；
Shape in another silicon dioxide layer at the first through hole and on the certain media layer of the neighbouring first through hole
Into polysilicon, N-type ion implanting is carried out to the polysilicon；
Rapid thermal annealing is carried out to the polysilicon, so as to which the p-type doped regions surface at the first through hole forms N
Type region；
Second of photoetching and etching are carried out to the dielectric layer, so as to be formed through the dielectric layer and the corresponding p-type
Second through-hole of high-doped zone；
The first metal portion is formed on the polysilicon and on the certain media layer of the neighbouring polysilicon and described
The second metal portion is formed in second through-hole and on the dielectric layer of neighbouring second through-hole.
In one embodiment, range of the growth temperature of the field oxide at 700 degrees Celsius to 1200 degrees Celsius
It is interior, in the range of growth thickness is 0.4um to 2um.
In one embodiment, the step of removing the silicon nitride layer and the silicon dioxide layer includes：First using heat
Concentrated phosphoric acid get rid of the silicon nitride layer；And the silicon dioxide layer is removed using hydrofluoric acid solution again.
In one embodiment, the step of removal part field oxide includes：Using hydrofluoric acid solution removal portion
Divide the field oxide.
In one embodiment, the thickness of another silicon dioxide layer is in the range of 0.02um to 0.1um.
In one embodiment, in the first time p-type ion implanting, injection ion includes B or BF2, injectant
It measures in the range of every square centimeter 1 14 powers of 12 powers to every square centimeter 1, Implantation Energy is in 20KEV to 200KEV
In the range of.
In one embodiment, in second of p-type ion implanting, injection ion includes B or BF2, injectant
It measures in the range of every square centimeter 1 16 powers of 14 powers to every square centimeter 5, Implantation Energy is in 20KEV to 200KEV
In the range of.
In one embodiment, the formation temperature of the polysilicon is in the range of 400 degrees Celsius to 1000 degrees Celsius；
The polysilicon is carried out in N-type ion implanting step, injection ion includes As, and implantation dosage is at 15 times of every square centimeter 1
In the range of side to every square centimeter 5 16 powers, Implantation Energy is in the range of 20KEV to 200KEV.
In one embodiment, the dielectric layer includes silica, first metal portion and the second metal portion
For thickness in the range of 0.1um to 2um, material includes Al-Si-Cu alloy.
A kind of radio frequency triode including silicon substrate, the epitaxial layer being formed on the silicon substrate, is formed in the extension
On layer and upper and lower surface is respectively provided with the p-type doped regions at turning, is formed on the epitaxial layer and p-type doped regions both ends
On field oxide, be formed in p-type doped regions upper surface and the dioxy being connected between the field oxide at the both ends
SiClx layer is formed in the p-type doped regions adjacent to the p-type high-doped zone on the surface of the silicon dioxide layer side and N-type region
Domain, be formed on the field oxide, the dielectric layer in the silicon dioxide layer, through the dielectric layer and the corresponding N-type
Second through-hole of the first through hole in region and the corresponding p-type high-doped zone, in the first through hole and neighbouring described the
Polysilicon on the dielectric layer of one through-hole, be formed on the polysilicon and the certain media layer of the neighbouring polysilicon on the
One metal portion and be formed in second through-hole and the certain media layer of neighbouring second through-hole on the second metal portion,
Described in the wedge angle of field oxide correspond to position below the vertex at p-type doped regions turning and low-doped with the p-type
The turning in area has preset distance.
Compared to the prior art, in radio frequency triode of the present invention and preparation method thereof, grow and complete in the field oxide
After, field oxide can be got rid of a part so that the sharp corner of field oxide is moved to both sides, then carries out p-type again
The injection of doped regions, carry out above have the advantages that it is following：<1>During wet etching, field oxide can be further cleared up
The defects of sharp corner residue etc., the defects of reduction herein；<2>Because field oxide sharp corner is corroded, at this time again into
When row p-type doped regions are injected, save the photoetching of p-type doped regions, manufacture cost can be saved；<3>Field oxide originally
Sharp corner position through excessive erosion, has been deep into the inside of p-type doped regions now, so even if herein surface the defects of
Through the breakdown between p-type doped regions and n-type region herein cannot be influenced；<4>P-type doped regions originally and N-type region
Domain puncture place, curvature are more severe.Present puncture place continues deeper into the inside of silicon not on surface, breakdown voltage
Stability has obtained further raising.
【Description of the drawings】
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the flow chart of the production method of radio frequency triode of the present invention.
Fig. 2-Figure 16 is the structure diagram of each step of the production method of radio frequency triode shown in Fig. 1.
Main element symbol description
P-type doped regions：P- areas
P-type high-doped zone：P+ areas
N-type region：N+ areas
【Specific embodiment】
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
- Figure 16 is please referred to Fig.1, Fig. 1 is the flow chart of the production method of radio frequency triode of the present invention, and Fig. 2-Figure 16 is Fig. 1
The structure diagram of each step of the production method of shown radio frequency triode.The production method of the radio frequency triode includes following
Step.
Step S1 referring to Fig. 2, providing silicon substrate, forms epitaxial layer on the silicon substrate.The epitaxial layer is N-type
Epitaxial layer.
Step S2, referring to Fig. 3, sequentially forming silicon dioxide layer and silicon nitride layer on said epitaxial layer there.
Step S3, referring to Fig. 4, carry out photoetching and etching to the silicon nitride layer, remove the partial nitridation layer at both ends from
And form open area.
Step S4, referring to Fig. 5, being carried out to the part of silica layer of the open area and the neighbouring open area
The growth of field oxide has angular field oxide so as to be formed between the silicon nitride layer both ends and the epitaxial layer,
The wedge angle of the field oxide corresponds to the silicon dioxide layer of another part, and the epitaxial layer includes the neighbouring field oxide
Turning.Wherein, in the range of 700 degrees Celsius to 1200 degrees Celsius, growth thickness is the growth temperature of the field oxide
In the range of 0.4um to 2um.
Step S5, referring to Fig. 6, removing the silicon nitride layer and the silicon dioxide layer.The step S5 includes：First adopt
The silicon nitride layer is got rid of with the concentrated phosphoric acid of heat；And the silicon dioxide layer is being removed using hydrofluoric acid solution.
Step S6, referring to Fig. 7, removal the part field oxide so that the vertex of the wedge angle of the field oxide with
The vertex at the turning of the epitaxial layer has preset distance.That is, the vertex of the angle of the field oxide be equivalent to both sides and
Lower section moves preset distance, and the preset distance can be set according to actual needs.Further, the part field oxygen is removed
The step of changing layer includes：The part field oxide is removed using hydrofluoric acid solution.
Step S7, referring to Fig. 8, forming another silicon dioxide layer, another dioxy again in the epi-layer surface
SiClx layer covers the turning of the epitaxial layer and is connected between the field oxide at the epitaxial layer both ends.Another titanium dioxide
The thickness of silicon layer is in the range of 0.02um to 0.1um.
Step S8, referring to Fig. 9, first time p-type ion implanting is carried out, so as to below another silicon dioxide layer
Epi-layer surface forms p-type doped regions (i.e. P- areas), and p-type doped regions upper and lower surface is respectively provided with turning.Wherein, it is described
In first time p-type ion implanting, injection ion includes B or BF2, implantation dosage every square centimeter 1 12 powers to often putting down
In the range of square centimetre 1 of 14 powers, Implantation Energy is in the range of 20KEV to 200KEV.Specifically, in the step S8,
The p-type doped regions formed do not need to carry out photoetching before injection, and the p-type doped regions are located next to the field oxide
Sharp corner.Since this step does not do photoetching, cost is saved on.
Step S9, referring to Fig. 10, second of p-type ion implanting is carried out, so as to be formed on p-type doped regions surface
P-type high-doped zone (i.e. P+ areas).Wherein, in second of p-type ion implanting, injection ion includes B or BF2, injectant
It measures in the range of every square centimeter 1 16 powers of 14 powers to every square centimeter 5, Implantation Energy is in 20KEV to 200KEV
In the range of.
Step S10, please refers to Fig.1 1, and dielectric layer is formed on the field oxide, in another silicon dioxide layer.Institute
It states dielectric layer and includes silica.
Step S11, please refers to Fig.1 2, and first time photoetching and etching are carried out to the dielectric layer, runs through described so as to be formed
Dielectric layer and the first through hole of the corresponding p-type doped regions.
Step S12, please refers to Fig.1 3, and in another silicon dioxide layer at the first through hole and neighbouring described first leads to
Polysilicon is formed on the certain media layer in hole, N-type ion implanting is carried out to the polysilicon.Wherein, the formation of the polysilicon
Temperature is in the range of 400 degrees Celsius to 1000 degrees Celsius；To the polysilicon carry out N-type ion implanting step in, inject from
Attached bag includes As, and implantation dosage is in the range of every square centimeter 1 16 powers of 15 powers to every square centimeter 5, Implantation Energy
In the range of 20KEV to 200KEV.
Step S13, please refers to Fig.1 4, rapid thermal annealing is carried out to the polysilicon, so as to the P at the first through hole
Type doped regions surface forms n-type region (i.e. N+ areas).The n-type region is N-type high-doped zone.
Step S14, please refers to Fig.1 5, and second of photoetching and etching are carried out to the dielectric layer, runs through described so as to be formed
Dielectric layer and the second through-hole of the corresponding p-type high-doped zone.
Step S15, please refers to Fig.1 6, and the is formed on the polysilicon and on the certain media layer of the neighbouring polysilicon
One metal portion and form the second metal portion in second through-hole and on the dielectric layer of neighbouring second through-hole.Wherein,
For the thickness of first metal portion and the second metal portion in the range of 0.1um to 2um, material includes Al-Si-Cu alloy, and institute
The first metal portion is stated to be formed in the mask processing procedure with along with the second metal portion.
Wherein, as shown in figure 16, the radio frequency triode include silicon substrate, be formed on the silicon substrate epitaxial layer,
It is formed on the epitaxial layer and upper and lower surface is respectively provided with the p-type doped regions at turning, is formed on the epitaxial layer and the P
Field oxide on the both ends of type doped regions is formed in p-type doped regions upper surface and is connected to the field oxygen at the both ends
Change the silicon dioxide layer between layer, be formed in p-type height of the p-type doped regions adjacent to the surface of the silicon dioxide layer side
Doped region and n-type region, be formed on the field oxide, the dielectric layer in the silicon dioxide layer, through the dielectric layer
And correspond to the first through hole of the n-type region and the second through-hole of the corresponding p-type high-doped zone, in the first through hole
And it polysilicon on the dielectric layer of the neighbouring first through hole, is formed on the polysilicon and the part of the neighbouring polysilicon
It the first metal portion on dielectric layer and is formed in second through-hole and on the certain media layer of neighbouring second through-hole
Second metal portion, wherein the wedge angle of the field oxide correspond to the position below the vertex at p-type doped regions turning and with
The turning of the p-type doped regions has preset distance.
Compared to the prior art, in radio frequency triode of the present invention and preparation method thereof, grow and complete in the field oxide
After, field oxide can be got rid of a part so that the sharp corner of field oxide is moved to both sides, then carries out p-type again
The injection of doped regions, carry out above have the advantages that it is following：<1>During wet etching, field oxide can be further cleared up
The defects of sharp corner residue etc., the defects of reduction herein；<2>Because field oxide sharp corner is corroded, at this time again into
When row p-type doped regions are injected, save the photoetching of p-type doped regions, manufacture cost can be saved；<3>Field oxide originally
Sharp corner position through excessive erosion, has been deep into the inside of p-type doped regions now, so even if herein surface the defects of
Through the breakdown between p-type doped regions and n-type region herein cannot be influenced；<4>P-type doped regions originally and N-type region
Domain puncture place, curvature are more severe.Present puncture place continues deeper into the inside of silicon not on surface, breakdown voltage
Stability has obtained further raising.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
It encloses.
Claims (10)
1. a kind of production method of radio frequency triode, which is characterized in that the production method includes the following steps：
Silicon substrate is provided, forms epitaxial layer on the silicon substrate；
Silicon dioxide layer and silicon nitride layer are sequentially formed on said epitaxial layer there；
Photoetching and etching are carried out to the silicon nitride layer, remove the partial nitridation layer at both ends so as to form open area；
The growth of field oxide is carried out to the part of silica layer of the open area and the neighbouring open area, thus
It is formed between the silicon nitride layer both ends and the epitaxial layer and has angular field oxide, the wedge angle of the field oxide corresponds to
The silicon dioxide layer of another part, the epitaxial layer include the turning of the neighbouring field oxide；
Remove the silicon nitride layer and the silicon dioxide layer；
Remove the part field oxide so that the vertex on the vertex of the wedge angle of the field oxide and the turning of the epitaxial layer
With preset distance；
Another silicon dioxide layer is formed again in the epi-layer surface, and another silicon dioxide layer covers the epitaxial layer
Turning is simultaneously connected between the field oxide at the epitaxial layer both ends；
First time p-type ion implanting is carried out, so as to which the epi-layer surface below another silicon dioxide layer forms p-type low-mix
Miscellaneous area, p-type doped regions upper and lower surface are respectively provided with turning；
Second of p-type ion implanting is carried out, so as to form p-type high-doped zone on p-type doped regions surface；
Dielectric layer is formed on the field oxide, in another silicon dioxide layer；
First time photoetching and etching are carried out to the dielectric layer, so as to be formed through the dielectric layer and the corresponding p-type low-mix
The first through hole in miscellaneous area；
It is formed in another silicon dioxide layer at the first through hole and on the certain media layer of the neighbouring first through hole more
Crystal silicon carries out N-type ion implanting to the polysilicon；
Rapid thermal annealing is carried out to the polysilicon, so as to which the p-type doped regions surface at the first through hole forms N-type region
Domain；
Second of photoetching and etching are carried out to the dielectric layer, so as to formed through the dielectric layer and the corresponding p-type it is highly doped
Second through-hole in miscellaneous area；
The first metal portion is formed on the polysilicon and on the certain media layer of the neighbouring polysilicon and described second
The second metal portion is formed in through-hole and on the dielectric layer of neighbouring second through-hole.
2. the production method of radio frequency triode as described in claim 1, it is characterised in that：The growth temperature of the field oxide
In the range of 700 degrees Celsius to 1200 degrees Celsius, in the range of growth thickness is 0.4um to 2um.
3. the production method of radio frequency triode as described in claim 1, it is characterised in that：Remove the silicon nitride layer and described
The step of silicon dioxide layer, includes：The silicon nitride layer is first got rid of using the concentrated phosphoric acid of heat；And it is gone again using hydrofluoric acid solution
Except the silicon dioxide layer.
4. the production method of radio frequency triode as described in claim 1, it is characterised in that：Remove the part field oxide
Step includes：The part field oxide is removed using hydrofluoric acid solution.
5. the production method of radio frequency triode as described in claim 1, it is characterised in that：The thickness of another silicon dioxide layer
Degree is in the range of 0.02um to 0.1um.
6. the production method of radio frequency triode as described in claim 1, it is characterised in that：The first time p-type ion implanting
In, injection ion includes B or BF2,12 powers to every square centimeter 1 14 powers of the implantation dosage every square centimeter 1
In the range of, Implantation Energy is in the range of 20KEV to 200KEV.
7. the production method of radio frequency triode as described in claim 1, it is characterised in that：Second of p-type ion implanting
In, injection ion includes B or BF2,14 powers to every square centimeter 5 16 powers of the implantation dosage every square centimeter 1
In the range of, Implantation Energy is in the range of 20KEV to 200KEV.
8. the production method of radio frequency triode as described in claim 1, it is characterised in that：The formation temperature of the polysilicon exists
In the range of 400 degrees Celsius to 1000 degrees Celsius；The polysilicon is carried out in N-type ion implanting step, injection ion includes
As, implantation dosage is in the range of every square centimeter 1 16 powers of 15 powers to every square centimeter 5, and Implantation Energy is in 20KEV
To 200KEV.
9. the production method of radio frequency triode as described in claim 1, it is characterised in that：The dielectric layer includes titanium dioxide
For the thickness of silicon, first metal portion and the second metal portion in the range of 0.1um to 2um, material includes Al-Si-Cu alloy.
10. a kind of radio frequency triode, which is characterized in that the radio frequency triode includes silicon substrate, is formed on the silicon substrate
Epitaxial layer, be formed on the epitaxial layer and upper and lower surface is respectively provided with the p-type doped regions at turning, is formed in the epitaxial layer
The upper and field oxide on the both ends of the p-type doped regions is formed in p-type doped regions upper surface and is connected to described two
Silicon dioxide layer between the field oxide at end is formed in table of the p-type doped regions adjacent to the silicon dioxide layer side
The p-type high-doped zone in face and n-type region, be formed on the field oxide, the dielectric layer in the silicon dioxide layer, through institute
State the first through hole of dielectric layer and the corresponding n-type region and the second through-hole of the corresponding p-type high-doped zone, positioned at described the
Polysilicon in one through-hole and on the dielectric layer of the neighbouring first through hole is formed on the polysilicon and the neighbouring polycrystalline
It the first metal portion on the certain media layer of silicon and is formed in second through-hole and the part of neighbouring second through-hole is situated between
The second metal portion on matter layer, wherein the wedge angle of the field oxide is corresponded to below the vertex at p-type doped regions turning
Position and there is preset distance with the turnings of the p-type doped regions.
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Citations (4)
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|---|---|---|---|---|
| US4866001A (en) * | 1988-07-01 | 1989-09-12 | Bipolar Integrated Technology, Inc. | Very large scale bipolar integrated circuit process |
| CN105225952A (en) * | 2014-06-10 | 2016-01-06 | 北大方正集团有限公司 | A kind of manufacture method of VDMOS device and VDMOS device |
| CN105990135A (en) * | 2015-02-05 | 2016-10-05 | 北大方正集团有限公司 | Manufacturing method of polysilicon emitter transistor |
| CN107104049A (en) * | 2016-02-23 | 2017-08-29 | 北大方正集团有限公司 | The preparation method and radio frequency triode of radio frequency triode |
-
2017
- 2017-12-21 CN CN201711397410.4A patent/CN108133958A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866001A (en) * | 1988-07-01 | 1989-09-12 | Bipolar Integrated Technology, Inc. | Very large scale bipolar integrated circuit process |
| CN105225952A (en) * | 2014-06-10 | 2016-01-06 | 北大方正集团有限公司 | A kind of manufacture method of VDMOS device and VDMOS device |
| CN105990135A (en) * | 2015-02-05 | 2016-10-05 | 北大方正集团有限公司 | Manufacturing method of polysilicon emitter transistor |
| CN107104049A (en) * | 2016-02-23 | 2017-08-29 | 北大方正集团有限公司 | The preparation method and radio frequency triode of radio frequency triode |
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