CN108133957A - Pmos晶体管结构及其形成方法 - Google Patents
Pmos晶体管结构及其形成方法 Download PDFInfo
- Publication number
- CN108133957A CN108133957A CN201810017869.5A CN201810017869A CN108133957A CN 108133957 A CN108133957 A CN 108133957A CN 201810017869 A CN201810017869 A CN 201810017869A CN 108133957 A CN108133957 A CN 108133957A
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- China
- Prior art keywords
- substrate
- channel region
- etching
- pmos transistor
- occluding device
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Links
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 11
- 238000011065 in-situ storage Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 150000001721 carbon Chemical group 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 6
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 6
- 229910018503 SF6 Inorganic materials 0.000 claims description 5
- 230000035755 proliferation Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000010703 silicon Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- -1 carbon ion Chemical class 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000011796 hollow space material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810017869.5A CN108133957B (zh) | 2018-01-09 | 2018-01-09 | Pmos晶体管结构及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810017869.5A CN108133957B (zh) | 2018-01-09 | 2018-01-09 | Pmos晶体管结构及其形成方法 |
Publications (2)
Publication Number | Publication Date |
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CN108133957A true CN108133957A (zh) | 2018-06-08 |
CN108133957B CN108133957B (zh) | 2020-09-01 |
Family
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Family Applications (1)
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CN201810017869.5A Active CN108133957B (zh) | 2018-01-09 | 2018-01-09 | Pmos晶体管结构及其形成方法 |
Country Status (1)
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CN (1) | CN108133957B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020074598A1 (en) * | 1999-06-28 | 2002-06-20 | Doyle Brian S. | Methodology for control of short channel effects in MOS transistors |
US20070117326A1 (en) * | 2004-07-07 | 2007-05-24 | Tan Chung F | Material architecture for the fabrication of low temperature transistor |
CN101834206A (zh) * | 2010-04-12 | 2010-09-15 | 清华大学 | 半导体器件结构及其形成方法 |
CN104600021A (zh) * | 2013-10-31 | 2015-05-06 | 英飞凌科技奥地利有限公司 | 形成于半导体衬底中的绝缘结构和形成绝缘结构的方法 |
-
2018
- 2018-01-09 CN CN201810017869.5A patent/CN108133957B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020074598A1 (en) * | 1999-06-28 | 2002-06-20 | Doyle Brian S. | Methodology for control of short channel effects in MOS transistors |
US20070117326A1 (en) * | 2004-07-07 | 2007-05-24 | Tan Chung F | Material architecture for the fabrication of low temperature transistor |
CN101834206A (zh) * | 2010-04-12 | 2010-09-15 | 清华大学 | 半导体器件结构及其形成方法 |
CN104600021A (zh) * | 2013-10-31 | 2015-05-06 | 英飞凌科技奥地利有限公司 | 形成于半导体衬底中的绝缘结构和形成绝缘结构的方法 |
Also Published As
Publication number | Publication date |
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CN108133957B (zh) | 2020-09-01 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200721 Address after: 247100 Fuan Electronic Information Industry Park 10, Chizhou economic and Technological Development Zone, Anhui Applicant after: ANHUI ANXIN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 050000 Unit 602, Building 40, Unit 3, 416 Huaibei Road, Yuhua District, Shijiazhuang City, Hebei Province Applicant before: Meng Jing |
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TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: PMOS transistor structure and its formation method Granted publication date: 20200901 Pledgee: China Co. truction Bank Corp Chizhou branch Pledgor: ANHUI ANXIN ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2024980003211 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |