CN108110070B - TCO/p/i/TCO玻璃结构的透明硅薄膜太阳能电池及其制备 - Google Patents
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- 238000001017 electron-beam sputter deposition Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种新型结构的透明硅基薄膜太阳能电池结构及其制备方法,属于太阳能电池技术领域。技术方案是：①在TCO玻璃上沉积本征硅薄膜层；②在本征硅薄膜层上沉积p型硅薄膜掺杂层；③在p型硅薄膜掺杂层上沉积TCO薄膜导电层，通过p型硅薄膜掺杂层与TCO玻璃形成内建电场，从而形成一种新型结构的透明薄膜太阳能电池。本发明具备以下优点：1)本发明的透明硅基薄膜太阳能电池没有n型掺杂层，节约了电池制备所用的原材料，降低了生产成本；2)本发明的透明硅基薄膜太阳能电池没有制备n型掺杂层这一工艺环节，减少了生产时间，提高了生产产能；3)本发明的透明硅基薄膜太阳能电池没有n型掺杂层，提高了电池的透光度。
Description
技术领域
本发明属于太阳能电池领域，是一种新型的TCO/p/i/TCO玻璃结构的透明硅薄膜太阳能电池及其制备方法。
背景技术
太阳能电池作为新能源对解决能源危机及环境污染具有重要的战略意义，而硅基薄膜太阳能电池因其制备工艺简单，耗能低等优势得到了广泛的关注。
当前钢化玻璃装饰建筑物的方式极为普遍，而将太阳能电池板应用在这一领域得到广泛关注，这推动了光伏建筑一体化的发展。透明薄膜太阳能电池由于其半透明性以及具有发电的功能无疑是最佳选择。
当前，透明硅基薄膜太阳能电池均采用pin结构制备，由p层和n层作为电极，构建内建电场，其制备工艺相对复杂，工艺条件要求较高。本发明利用等离子体增强化学气相沉积(PECVD)方法，在具有TCO的导电玻璃上制备透明硅基薄膜太阳能电池，其结构为TCO/p/i/TCO玻璃，仅仅利用p层和TCO玻璃构建内建电场，得到合乎规格的电池，这一方法无疑简化了电池的结构，在一定程度上降低了电池的生产成本，提高了电池的透明度。
发明内容
本发明提出了一种新型结构的透明硅基薄膜太阳能电池，结构为TCO/p/i/TCO玻璃。不同于pin传统结构的太阳能电池，其去除掉n层，一方面提高了电池的光透过，另一方面节省了材料。
本发明的技术方案如下：
(1)在超白浮法透明玻璃上制备透明导电薄膜TCO，如ITO(所使用的方法为热蒸发、电子束蒸发，或者溅射)，BZO(所使用的方法为低压化学气相沉积)，AZO(所使用的方法为溅射)，或者直接购买商用TCO玻璃，比如FTO玻璃，AZO玻璃等；
(2)在制备或者购买的TCO玻璃上，以SiH4、H2为反应气体，沉积本征硅薄膜层，所使用的方法是PECVD(等离子体增强型化学气相沉积)；
(3)在之后的本征硅薄膜层上，以SiH4、H2为反应气体，以B2H6，或者TMB，或者BF3为掺杂气体，沉积p型硅薄膜掺杂层，所使用的方法是PECVD(等离子体增强型化学气相沉积)；
(4)在之后的p型硅薄膜掺杂层上，沉积透明导电薄膜TCO，如ITO(所使用的方法为热蒸发、电子束蒸发，或者溅射)，BZO(所使用的方法为低压化学气相沉积)，AZO(所使用的方法为溅射)。
本发明的优点和积极效果：
本发明制备的透明硅基薄膜太阳能电池的内建电场是由p型硅薄膜掺杂层和TCO玻璃组建的。使用本发明的透明硅基薄膜太阳能电池具备以下优势：
1)本发明的透明硅基薄膜太阳能电池没有n型掺杂层，节约了电池制备所用的原材料，降低了生产成本；2)本发明的透明硅基薄膜太阳能电池没有制备n型掺杂层这一工艺环节，减少了生产时间，提高了生产产能；3)本发明的透明硅基薄膜太阳能电池没有n型掺杂层，提高了电池的透光度。
附图说明
图1为新型结构透明硅基薄膜太阳能电池的结构图；
图2为制备新型结构透明硅基薄膜太阳能电池的流程图；
图3为实施例1中新型结构透明硅基薄膜太阳能电池的I-V曲线图。
具体实施方式
下面结合具体实施例，进一步说明本发明的具体实现方法，但本发明并不限于这些具体实施例。
实施例1
下面结合附图1、附图2、附图3，通过实施例对本发明作进一步说明。
1.对购买的FTO玻璃1进行清洗，清洗方法是超声波清洗，清洗溶液依次为丙酮，酒精，去离子水，每种溶液清洗时间为20分钟；
2.在清洗后的FTO玻璃上沉积本征非晶硅薄膜，图中层2，厚度约为300nm,所使用的方法是PECVD(等离子体增强型化学气相沉积)；
3.在本征非晶硅薄膜层上沉积掺硼的非晶硅薄膜(p型非晶硅薄膜)，图中层3，厚度约为10nm，所使用的方法是PECVD(等离子体增强型化学气相沉积)；
4.在p型硅薄膜掺杂层上，沉积透明导电薄膜4，厚度约为70nm,本实施例中是ITO薄膜，所使用的方法是电子束蒸发。制备的新型结构的透明硅基薄膜太阳能电池的I-V曲线见图3。
实施例2
如实施例1所述制备方法，将本征非晶硅薄膜层2改为本征纳晶硅薄膜层，也可获得透明硅基薄膜太阳能电池。
实施例3
如实施例1所述制备方法，将FTO玻璃1改为AZO玻璃，也可获得透明硅基薄膜太阳能电池。
以上内容是结合具体的实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只限于这些说明。在不脱离本发明构思的前提下做出的若干替代或变形，且性能相近或用途相同，都应当视为属于本发明的保护范围。
Claims (8)
1.一种TCO/p/i/TCO玻璃结构的透明硅基薄膜太阳能电池，其特征在于：
TCO/p/i/TCO玻璃结构的透明硅基薄膜太阳能电池的结构从下至上包括依次层叠的：TCO玻璃（1）、本征硅薄膜层（2）、p型硅薄膜掺杂层（3）、TCO薄膜导电层（4）；
TCO玻璃（1）取代传统pin型硅薄膜太阳能电池中的n层，TCO玻璃（1）与p层及i层构成太阳能电池。
2.按照权利要求1所述的电池，其特征在于，制备的硅基薄膜太阳能电池具有半透明的特性。
3.按照权利要求1所述的电池，其特征在于：TCO玻璃（1）中的TCO包括但不仅限于FTO、AZO、BZO、ITO、GZO或YZO。
4.按照权利要求1所述的电池，其特征在于：TCO薄膜导电层（4）中的TCO包括但不仅限于FTO、AZO、BZO、ITO、GZO或YZO。
5.按照权利要求1所述的电池，其特征在于：本征硅薄膜层（2）采用的材料为本征的非晶硅薄膜。
6.按照权利要求1所述的电池，其特征在于：p型硅薄膜掺杂层（3）采用的材料为掺硼的非晶硅薄膜。
7.一种权利要求1－4任一所述的TCO/p/i/TCO玻璃结构的透明硅基薄膜太阳能电池的制备方法，其特征在于：TCO玻璃（1）和TCO薄膜导电层（4）中的TCO制备方法，包括但不限于溅射、化学气相沉积或其他方法。
8.按照权利要求7所述的制备方法，其特征在于：本征硅薄膜层（2）和p型硅薄膜掺杂层（3）的制备方法，包括但不限于化学气相沉积或其他方法。
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