CN103972321A - 一种纤维状硅基薄膜太阳电池及其制备方法 - Google Patents
一种纤维状硅基薄膜太阳电池及其制备方法 Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract
本发明属于柔性、高效硅基薄膜太阳电池领域，具体为一种纤维状硅基薄膜太阳电池及其制备方法。本专利采用纤维状基底，若基底不导电需要先在基底上制备背电极，然后利用三室PECVD镀膜系统，在掺杂室及本征室中以SiH4、B2H6、PH3、H2、CH4、GeH4等为放电气体，在基底上依次制备n/i/p结构的硅薄膜，最后，利用磁控溅射镀膜系统p层表面制备ITO薄膜作为前电极和钝化层并包覆工作电极引出正电极”，制备出ss/n/i/p/ITO/前电极或ss/背电极/n/i/p/ITO/前电极结构的纤维状硅基薄膜太阳电池，将硅基薄膜太阳电池引入纤维化，电池具有三维采光、弯曲度大、易制备及可编织等优点。
Description
技术领域
本发明涉及一种纤维状硅基薄膜太阳电池及其制备方法，属柔性、高效硅基薄膜太阳电池领域。
背景技术
能源是人类赖以生存的战略性基础资源，也是经济、社会发展必不可少的动力源泉。地球上的石化能源正在不断减少，化石能源的利用给环境带来了严重的污染。因此，加强可再生能源的开发利用，大力发展“低碳经济”，是应对能源、环境问题，实现人类社会可持续发展的必由之路。太阳能是一种取之不尽、用之不竭的清洁能源。高效、低成本、方便地利用太阳能，已成为人们追求的目标。光伏技术是太阳能研究领域中一个重要的发展方向，其通过太阳电池将太阳能转换为电能，因此，太阳电池是光伏技术的核心，是决定光电转换效率的关键因素。以硅材料为基础的晶硅太阳电池以较高的转换效率、成熟的制备工艺，在各种光伏器件中占据主导地位。
非晶硅（a-Si:H）薄膜是硅基薄膜太阳电池的基础材料，具有光吸收系数大、折射率高和热性能良好等特点，应用于太阳电池时，所需薄膜的厚度仅为晶硅的1%左右，非晶硅太阳电池易实现大面积生产，既可采用玻璃等衬底，又可采用不锈钢、钛箔、铝箔和塑料等柔性衬底，因而可做成柔性太阳电池。但非晶硅薄膜太阳电池存在光电转换效率低和光致衰减（S-W）效应，制约了其发展和规模化应用。因此，近年来，人们研究了纳米硅（nc-Si:H）、微晶硅（uc-Si:H）及非晶硅与C、Ge合金等薄膜材料，以提高其转换效率。纳米硅、微晶硅薄膜不仅具有非晶硅太阳电池的众多优点，还能抑制光致衰减效应；a-Si1-xCx:H、a-Si1-xGex:H等合金薄膜材料可以通过组分调节实现带隙渐变，进而提高太阳电池转换效率。目前，硅基薄膜太阳电池大多以硬质玻璃为基板，即便柔性衬底硅基薄膜太阳电池也是做成平面，利用时必须要与一定的平面结合，降低了其应用范围。根据硅基薄膜太阳电池的结构，结合纤维状丝线的特点做成一种纤维状硅基太阳电池，使得硅基太阳电池可根据用途进行灵活编制，还能三维采光，提高电池效率。
近年来，人们对纤维状太阳电池已有了一定的研究。如：北京大学的中国发明专利（专利号：201010241512.9）：一种燃料敏化太阳电池，邹德春教授率领的科研团队针对染料敏化太阳电池做成了纤维状；复旦大学的中国发明专利(申请号：CN201010504015.3)：一种居于碳纳米管纤维的有机太阳能电池及其制备方法，其特征是采用N719敏化的碳纳米管纤维作为工作电极，采用FTO导电玻璃或FTO-PEN导电塑料作为工作电极和对电极机制，采用LiI、I2、二甲基-3-N-丙基咪唑碘和特丁基吡啶的无水乙埥溶液作为电解液，制备出柔性轻质的纤维有机太阳电池；美国专利(申请号：US03142747.2)用于制造太阳电池的纤维和窄带材，是将有机聚合物和无机材料纤维或窄带材以形成制品的取向粘附在衬底上，然后作为电极制备有机太阳电池，形成可编制太阳电池。相比之下，目前纤维太阳电池多数集中在染料敏化太阳电池领域，本专利根据硅基薄膜太阳电池的结构，结合纤维状太阳电池的特点，发明了一种纤维状硅基薄膜太阳电池，将硅基薄膜太阳电池引入纤维化，同时具备硅基薄膜太阳电池优点和纤维丝线可编制、三维采光等优点。
发明内容
针对背景技术提出的问题，本发明提供了一种纤维状硅基薄膜太阳电池及其制备方法，这种方法将硅基薄膜电池引入纤维化，具有电导高、弯曲度大、三维采光、可编制等优点，还能与硅基薄膜太阳电池的常规工艺完全兼容，能有效拓宽硅薄膜太阳电池的应用范围。
本发明提供的一种纤维状硅基薄膜太阳电池，其技术方案实现包括：纤维状基底
的选择和处理；硅基薄膜电池n/i/p结构的制备；电极的制备；电极的引出。具体为：
A) 采用纤维状丝线为基底，先对其进行清洗处理，而后用N2吹干，若纤维状基底不导电，需先在基底上制备一层导电Al/Ag薄膜作为背电极；
B) 利用三室等离子体增强化学汽相沉积（PECVD）镀膜系统，以SiH4、B2H6、PH3、H2、CH4、GeH4等为放电气体，在掺杂腔室和本征腔室内分别制备出n/i/p结构硅基薄膜；
C) 利用磁控溅射镀膜系统在P层硅薄膜表面溅射制备ITO透明导电氧化层包裹缠绕在表面的Ag线引出前电极；
D) 在表面涂上太阳电池专用的表面保护层，制备出纤维状硅基薄膜；
所述步骤（A）具体为：纤维状基底可选用导电性良好的金属纤维丝或者不导电的纤维丝，导电纤维状基底经过腐蚀去除表面损伤层或氧化层，再利用丙酮、无水乙醇及去离子水各超声清洗10min，N2吹干，作为基底和背电极，也可以在清洗后先涂敷一层绝缘体，再在其表面制备背电极；不导电的纤维丝经清洗后利用磁控溅射镀膜系统在其表面溅射制备一层50~100nm的Al/Ag膜做背电极；
所述步骤（B）具体为：利用备好的纤维状基底，先在PECVD的掺杂腔室1中，以SiH4和掺杂气体（PH3）等为放电气体，制备n型硅薄膜，通过控制制备工艺和放电气体的成分可制备成n-a-Si:H、n-a-Si1-xGex:H、n-nc-Si:H和n-uc-Si:H薄膜，厚度为25~50nm；再在本征室中以SiH4为放电气体制备i型硅基薄膜，调节好压力、衬底温度、功率密度及氢稀释比可制备成i-a-Si:H、i-nc-Si:H，厚度为250nm~500nm；最后再在掺杂室2中，以硅烷(SiH4)和掺杂气体（BH3）等为放电气体，制备P型硅薄膜，通过调控制备工艺和放电气体的成分可制备成p-a-Si:H、p-a-Si1-x Cx:H薄膜，厚度为15~25nm；
所述步骤（C）具体为：利用磁控溅射镀膜系统在P层硅薄膜表面溅射制备ITO透明导电氧化层厚度为300~400nm，包覆缠绕在表面的工作电极引出前电极；
所述步骤（D）具体为：前电极制备完毕，在表面涂上一层绝缘保护膜，减少前电极受外界环境的影响。
附图说明
图一为本发明提出的一种纤维状硅基薄膜太阳电池制备方法的流程图；
图二为本发明提出的一种纤维状硅基薄膜太阳电池结构的截面图
1、前电极引线；2、保护膜；3、ITO；4、p层；5、i层；6、n层；7、背电极；8、不导电纤维衬底；9、导电纤维衬底；
图三为本发明提出的一种纤维状硅基薄膜太阳电池的结构图；
图四为本发明提出的一种纤维状硅基薄膜太阳电池的工作原理图
1、前电极引线；2、负载；3、背电极；4、导线。
具体实施方式
实施例1
本实施例按以下步骤：
采用不锈钢纤维状丝线作衬底，衬底直径0.3~1.0mm，长10cm，采用腐蚀液（HCl+CH3COOH+H2O，1:2:1，25℃）对衬底表面进行超声腐蚀2min，然后依次使用丙酮、无水乙醇和去离子水分别对不锈钢纤维丝进行超声清洗10~15min，并用N2吹干；
用磁控溅射镀膜系统在衬底上先涂敷一层绝缘材料，再制备Al膜作为背电极，本底真空为6.0×10-4pa，工作压强为1.0~1.5pa，纯度为99.999%的Al靶为靶材，溅射气体为纯度为99.999%的Ar，溅射功率为73W，Al膜厚度为100~340nm；
利用三室等离子体增强化学汽相沉积（PECVD）镀膜系统，将不锈钢纤维状丝线安置在垂直旋转阀上，系统本底真空为6×10-3Pa；
掺杂室1中以SiH4和10%的稀释磷烷(PH3+H2)为放电气体，氢稀释比为55~65，衬底温度150℃，放电功率密度100～200mW/cm2，制备n-a-Si:H厚度为20~25nm；
在本征室中以SiH4为放电气体，生长压力、衬底温度和功率密度分别为100Pa、200℃、50~80mW/cm2，氢稀释比为10~20，制备i-a-Si:H，厚度为300~500nm；
掺杂室2中，以硅烷(SiH4)和1%的稀释的硼烷(B2H6+H2)，生长时的压力、温度和功率密度分别为100Pa、170℃、100～200mW/cm2，制备p-a-Si:H厚度为15~20nm；
利用磁控溅射镀膜系统在P层硅薄膜表面溅射制备ITO透明导电氧化层，本底真空为6.0×10-4pa，工作压强为1.0~1.5pa，ITO陶瓷靶为靶材，溅射气体为纯度为99.999%的Ar，溅射功率为60~120W，厚度为300~400nm；
利用ITO包覆缠绕在表面的工作电极引出正电极，涂上保护膜；经I-V测试仪测量，AM1.5光谱光照下电池效率为3%~5%。
实施例2
本实施例按以下步骤：
与实施例1不同之处在于：采用金属Al纤维状丝线，经腐蚀、清洗后直接作为电池的衬底和背电极，AM1.5光谱照射下电池效率为4%~7%。
实施例3
本实施例按以下步骤：
采用铝合金纤维状丝线作衬底，衬底直径0.3~1.0mm，长10cm采用腐蚀液（HCl+H2O，3:1，20℃）对衬底表面进行超声腐蚀1~2min，然后依次使用丙酮、无水乙醇和去离子水分别对不锈钢纤维状丝线进行超声清洗10min~15min，并用N2吹干；
利用三室等离子体增强汽相化学沉积（PECVD）镀膜系统，将不锈钢纤维状丝线安置在垂直旋转阀上，系统本底真空为6×10-3Pa；
掺杂室中以SiH4和10%的稀释磷烷(PH3+H2+CH4)为放电气体，氢稀释比为55~65，衬底温度200℃，放电功率密度为200mW/cm2，制备n-a-SiCx:H，厚度为20~50nm；
在本征室中以SiH4为放电气体，生长压力、衬底温度和功率密度分别为100Pa、200℃、50~80mW/cm2，氢稀释比为10~20，制备i-a-Si:H，厚度为300~500nm；
掺杂室中，以硅烷(SiH4)和1%稀释的硼烷(B2H6+H2)为放电气体，生长时的压力、温度和功率密度分别为100Pa、380℃、100～200mW/cm2，制备p-nc-Si:H，厚度为15~20nm；
利用磁控溅射镀膜系统在p层硅薄膜表面溅射制备ITO透明导电氧化层，本底真空为6.0×10-4pa，工作压强为1.0~1.5pa，ITO陶瓷靶为靶材，溅射气体为纯度为99.999%的Ar，溅射功率为60~120W，厚度为300~400nm；
利用ITO包覆缠绕在表面的工作电极引出正电极，涂上保护膜；经I-V测试仪测量，AM1.5光谱光照下电池效率为5%~7%。
实施例4
本实施例按以下步骤：
采用PEEK纤维状丝线作为衬底，衬底直径0.03~0.5mm，长5~8cm，依次使用无水乙醇和去离子水分别进行超声清洗10min~15min，并用N2吹干；
利用磁控溅射镀膜系统在衬底表面溅射制备ZnO:Al导电氧化层，本底真空为6.0×10-4pa，工作压强为1.0~1.5pa，靶材用纯度为99.99%的ZnO陶瓷靶和纯度为99.999%的Al靶，溅射气体为纯度为99.999%的Ar，功率为ZnO：射频60~120W，Al：直流36W~72W，厚度为300~380nm；
将制备的ZnO:Al导电氧化膜放入RTP快速退火炉中，N2气氛下400℃快速退火30min；
在ZnO:Al导电氧化膜表面按（实施例1）的步骤制备N/I/P硅薄膜、ITO薄膜及引出电极，AM1.5光谱照射下电池效率为2%~5%。
Claims (4)
1.一种纤维状硅基薄膜太阳电池及其制备方法，其特征是：“采用柔性纤维状基底，进行腐蚀清洗，若基底不导电需利用磁控溅射镀膜系统在基底上制备背电极，再利用三室等离子体增强化学汽相沉积（PECVD）镀膜系统，以SiH4、B2H6、PH3、H2、CH4、GeH4等为气体，先在掺杂室1中制备n型硅薄膜；再本征室中制备i型硅薄膜；然后再在掺杂室2中制备p型硅薄膜；最后，利用磁控溅射镀膜系统制备ITO薄膜作为前电极和钝化层并包裹缠绕的工作电极引出正电极”。
2.根据权利要求1中所述的n型硅薄膜，其特征在于通过调控放电气体成分及制备工艺，制备成n型a-Si:H, a-Si1-xGex:H, nc-Si:H。
3.根据权利要求1中所述的i型硅薄膜，其特征在于通过调控放电气体稀释比、流量及制备工艺，制备成a-Si:H, nc-Si:H。
4.根据权利要求1中所述的p型硅薄膜，其特征在于通过调控放电气体成分及制备工艺，制备成p型a-Si:H, a-Si1-xCx:H。
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| CN105932101A (zh) * | 2016-05-20 | 2016-09-07 | 广东蒙泰纺织纤维有限公司 | 一种丙纶纤维太阳能微电池及其制造方法 |
| CN106770187A (zh) * | 2016-11-21 | 2017-05-31 | 东南大学 | 一种电致变色传感器阵列及其制备、使用方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151708A (ja) * | 2000-11-08 | 2002-05-24 | Rikogaku Shinkokai | 光起電力素子 |
| CN101485008A (zh) * | 2006-05-01 | 2009-07-15 | 维克森林大学 | 有机光电器件及其应用 |
| CN101982895A (zh) * | 2010-10-12 | 2011-03-02 | 复旦大学 | 一种基于碳纳米管纤维的有机太阳能电池及其制备方法 |
| CN102347147A (zh) * | 2010-07-30 | 2012-02-08 | 北京大学 | 一种染料敏化太阳能电池 |
| JP2013041734A (ja) * | 2011-08-15 | 2013-02-28 | Nippon Steel & Sumikin Chemical Co Ltd | 色素増感太陽電池およびその製造方法 |
-
2014
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151708A (ja) * | 2000-11-08 | 2002-05-24 | Rikogaku Shinkokai | 光起電力素子 |
| CN101485008A (zh) * | 2006-05-01 | 2009-07-15 | 维克森林大学 | 有机光电器件及其应用 |
| CN102347147A (zh) * | 2010-07-30 | 2012-02-08 | 北京大学 | 一种染料敏化太阳能电池 |
| CN101982895A (zh) * | 2010-10-12 | 2011-03-02 | 复旦大学 | 一种基于碳纳米管纤维的有机太阳能电池及其制备方法 |
| JP2013041734A (ja) * | 2011-08-15 | 2013-02-28 | Nippon Steel & Sumikin Chemical Co Ltd | 色素増感太陽電池およびその製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932101A (zh) * | 2016-05-20 | 2016-09-07 | 广东蒙泰纺织纤维有限公司 | 一种丙纶纤维太阳能微电池及其制造方法 |
| CN106770187A (zh) * | 2016-11-21 | 2017-05-31 | 东南大学 | 一种电致变色传感器阵列及其制备、使用方法 |
| CN106770187B (zh) * | 2016-11-21 | 2020-02-18 | 东南大学 | 一种电致变色传感器阵列及其制备、使用方法 |
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