CN104319306A - 一种高效叠层薄膜太阳电池及其制备方法 - Google Patents
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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Abstract
本发明属于高效硅基薄膜太阳电池领域，具体为一种高效叠层薄膜太阳电池及其制备方法。本专利先采用磁控溅射镀膜系统，在衬底上溅射制备TCO膜，对TCO薄膜经清洗和激光光刻。然后采用等离子体增强化学气相沉积（PECVD）系统在TCO薄膜上进行硅基薄膜的沉积依次进行顶电池PIN、中间电池PIN和低电池PIN的制作，其中P层均为a-SiC:H薄膜、N层为a-SiO:H薄膜，顶电池的I层为a-Si:H、中间电池的I层为a-SiGe:H，底电池的I层为梯度渐变的a-SiGe:H，接着对硅基薄膜进行激光划线。最后溅射背电极AZO/Ag，再对背电极进行激光划线制备出太阳电池。制备出结构为TCO/P-a-SiC:H/I-a-Si:H/N-a-SiO:H/P-a-SiC:H/I-a-SiGe:H/N-a-SiO:H/P-a-SiC:H/I-uc-Si:H/N-a-SiO:H/AZO/Ag的三结叠层薄膜太阳电池，能有效提高太阳电池的开路电压。
Description
技术领域
本专利涉及一种叠层薄膜太阳电池及其制备方法，属于高效薄膜太阳电池领域。
背景技术
非晶硅（a-Si:H）太阳电池因具有原材料用量少、易实现大面积生产和可制成柔性薄膜太阳电池等优点而倍受青睐。但目前非晶硅薄膜太阳电池还面临着转换效率低和光致衰退（S-W）效应等问题，提高非晶硅太阳电池效率和有效降低光致衰退是未来硅薄膜太阳电池发展的主要方向。
非晶硅材料的带隙可通过与锗（Ge）、碳（C）、氧（O）和氮（N）等元素形成合金来调节，非晶硅碳（a-SiC:H）合金薄膜材料具有较宽的带隙，通过改变C含量可实现 a-SiC:H合金的带隙在1.7eV~2.2eV之间的调控，用作硅基薄膜太阳电池的P型窗口层可显著提高电池的开路电压和短路电流，但a-SiC:H合金材料缺陷态密度较高，不适合作为硅基薄膜太阳电池的本征吸收层。非晶硅锗（a-SiGe:H）合金材料具有较窄的带隙，通过改变Ge含量，可实现 a-SiGe:H合金的带隙在1.1eV~1.7eV之间的调控。在H2稀释硅烷，添加二氧化碳为混合气源的情况下控制制备参数可制备非晶硅氧（a-SiO:H）薄膜，它也是一种宽带隙薄膜材料，通过控制O含量可实现带隙可调，因此，可用作顶电池的吸收层，也可以做成P或N型窗口层。在此基础上人们研究了a-Si:H/a-SiGe:H、a-Si:H/a-SiGe:H/a-SiGe:H等多结叠层薄膜太阳电池，改进了太阳电池的长波吸收范围，降低了各层电池本征层的厚度，从而提高了电池的光照稳定性。基于此，本专利利用a-SiC:H薄膜为P型窗口层，a-SiO:H薄膜为N窗口层制备了a-Si:H/a-SiGe:H/uc-Si:H三结薄膜太阳电池。
对比专利（专利号：201110331873.7）柔性衬底硅基多结叠层薄膜太阳电池及其制造方法公布的：“在金属箔或聚酯膜柔性衬底上依次沉积背反射电极、微晶硅或非晶硅锗底电池、非晶硅顶电池、透明导电氧化膜、金属栅线制出太阳电池，微晶硅或非晶硅锗底电池和非晶硅顶电池之间用复合隧道结进行连接”；专利（专利号：200910031173.9）纳米硅薄膜三叠层太阳电池及其制备方法公布的：“采用PECVD在柔性金属或聚酰亚胺衬底上制备nc-Si:H/nc-Si:H/nc-Si:H三叠层结构太阳电池，顶点池采用N+NIPP+结构”，本专利具有能有效提高电池开路电压、拓宽太阳光谱的吸收范围等优点。
发明内容
在发明专利的目的是提供一种高效叠层薄膜太阳电池及其制备方法，具体为采用磁控溅射镀膜系统，在衬底上溅射制备TCO膜，经清洗和激光光刻后进入等离子体增强化学气相沉积（PECVD）系统进行硅基薄膜的沉积；依次进行顶电池PIN、中间电池PIN和低电池PIN的制作，最后溅射背电极AZO/Ag，再对背电极进行激光划线制备出太阳电池。
P层均为a-SiC:H薄膜、N层为a-SiO:H薄膜，顶电池的I层为a-Si:H、中间电池的I层为a-SiGe:H，底电池的I层为梯度渐变的a-SiGe:H，接着对硅基薄膜进行激光划线，制备出结构为TCO/P-a-SiC:H/I-a-Si:H/N-a-SiO:H/P-a-SiC:H/I-a-SiGe:H/N-a-SiO:H/P-a-SiC:H/I-uc-Si:H/N-a-SiO:H/AZO/Ag的三结叠层薄膜太阳电池。
附图说明
图1为本专利中一种高效叠层薄膜太阳电池的结构图；
图2为实施例中高效叠层薄膜太阳电池的激光刻线图；
图3为实施例中高效叠层薄膜太阳电池的I-V曲线图；
图4为实施例中高效叠层薄膜太阳电池的Q-E曲线图。
实施例
1、TCO玻璃制备
采用玻璃片为衬底，经过丙酮、无水乙醇、去离子水各超声清洗10min后利用高纯（纯度为99.999%）N2吹干；利用磁控溅射镀膜系统在玻璃片上共溅射制备ZnO:Al薄膜，溅射系统的本底真空为6.0×10-4pa，工作压强为1.5~2.0pa，溅射厚度为90~110nm，Al含量为12%~25%，溅射完成后利用快速退火炉于N2气氛下对ZnO:Al薄膜进行快速退火，退火温度为350℃、时间为20~25min。
2、PIN结硅基薄膜的制备
利用四室团簇式或三室线列式等离子体增强汽相化学沉积（PECVD）镀膜系统，用TCO 玻璃为衬底，系统本底真空为6×10-3Pa；
P型硅薄膜的制备，将TCO玻璃衬底置于p型掺杂室中，以硅烷(SiH4)、1%氢稀释的硼烷(B2H6+H2)和甲烷（CH4）为放电气体，170℃预烘烤30~60min，通入放电气体进行薄膜的制备，薄膜生长时的压力、温度和功率密度分别为100Pa、60℃、500～100mW/cm2，制备p-a-SiC:H，厚度为15~20nm；
在n型掺杂室中，以SiH4和10~15%的稀释磷烷(PH3+H2+O2)为放电气体，稀释比为50~60，衬底温度100~150℃，放电功率密度100～500mW/cm2，制备n-a-SiO:H，厚度为20~25nm；
在本征室中以SiH4或SiH4+GeH4为放电气体，生长压力、衬底温度和功率密度分别为100Pa、200~450℃、80~120mW/cm2，氢稀释比为10~20，制备出i-a-Si:H、i-a-SiGe:H或i-uc-Si:H，厚度为300~500nm。
背电极制备，利用磁控溅射镀膜系统溅射制备AZO/Ag透明导电氧化层，本底真空为6.0×10-4pa，工作压强为1.0~1.5pa，溅射气体为纯度为99.999%的Ar，溅射功率为60~120W，经I-V、Q-E测试仪测量，AM1.5光谱光照下电池大面积效率为12.5~13.0%。
Claims (1)
1.一种高效叠层薄膜太阳电池及其制备方法，其特征是：“采用磁控溅射镀膜系统在玻璃衬底上溅射制备TCO膜，经清洗和激光光刻后进入等离子体增强化学气相沉积（PECVD）系统依次进行顶电池PIN、中间电池PIN和低电池PIN的制作，P层均为a-SiC:H薄膜、N层为a-SiO:H薄膜，顶电池的I层为a-Si:H、中间电池的I层为a-SiGe:H，底电池的I层为梯度渐变的a-SiGe:H，对硅基薄膜进行激光刻线后溅射背电极AZO/Ag，再对背电极进行激光划线制备出太阳电池，制备出结构为TCO/P-a-SiC:H/I-a-Si:H/N-a-SiO:H/P-a-SiC:H/I-a-SiGe:H/N-a-SiO:H/P-a-SiC:H/I-uc-Si:H/N-a-SiO:H/AZO/Ag的三结叠层薄膜太阳电池”。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104779309A (zh) * | 2015-04-14 | 2015-07-15 | 湖南共创光伏科技有限公司 | 具有梯度结构的硅基薄膜太阳能电池及其制造方法 |
| CN106784146A (zh) * | 2016-12-26 | 2017-05-31 | 济南大学 | 一种甲胺铅碘/可调带隙非晶硅锗叠层薄膜电池组装技术 |
| CN110112226A (zh) * | 2019-04-04 | 2019-08-09 | 浙江师范大学 | 一种新型全钝化接触晶体硅太阳能电池及其制备方法 |
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| CN104779309A (zh) * | 2015-04-14 | 2015-07-15 | 湖南共创光伏科技有限公司 | 具有梯度结构的硅基薄膜太阳能电池及其制造方法 |
| CN104779309B (zh) * | 2015-04-14 | 2018-05-18 | 湖南共创光伏科技有限公司 | 具有梯度结构的硅基薄膜太阳能电池及其制造方法 |
| CN106784146A (zh) * | 2016-12-26 | 2017-05-31 | 济南大学 | 一种甲胺铅碘/可调带隙非晶硅锗叠层薄膜电池组装技术 |
| CN110112226A (zh) * | 2019-04-04 | 2019-08-09 | 浙江师范大学 | 一种新型全钝化接触晶体硅太阳能电池及其制备方法 |
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