CN108109660A - The read method and device of a kind of storage unit - Google Patents
The read method and device of a kind of storage unit Download PDFInfo
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- CN108109660A CN108109660A CN201611051313.5A CN201611051313A CN108109660A CN 108109660 A CN108109660 A CN 108109660A CN 201611051313 A CN201611051313 A CN 201611051313A CN 108109660 A CN108109660 A CN 108109660A
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- storage unit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Abstract
The invention discloses the read method and device of a kind of storage unit, this method includes：It receives and reads instruction；Reference current is determined according to the current temperature characteristic of the Current Temperatures of memory chip and storage unit；Apply to the storage unit of the memory chip and read voltage, so that the storage unit generates electric current；The state of the storage unit is determined according to the reference current and the electric current for flowing through the storage unit.A kind of read method of storage unit provided in an embodiment of the present invention realizes and determines different reference currents according to the different temperature of memory chip, and then ensures correctly to read as a result, improving the reading performance of storage unit.
Description
Technical field
The present invention relates to the read methods and device of memory technology field more particularly to a kind of storage unit.
Background technology
Flash memory (flash memory) is a kind of nonvolatile memory (Non-volatile memory),
Inside uses non-linear macroelement pattern, has many advantages, such as that capacity is big, and rewriting speed is fast, suitable for the storage of mass data.
In flash memory, a storage unit can see a metal oxide semiconductcor field effect transistor as
(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET).Fig. 1 is a kind of common
MOSFET structure figure, including grid 20, source electrode 21, drain electrode 22, P-type silicon Semiconductor substrate 23 and tunnel oxide 24.Its phase
Mutually between connection be：P-type silicon Semiconductor substrate 23 diffuses out two N-type regions, 23 one layer of tunnel of top covering of P-type silicon Semiconductor substrate
Oxide layer 24 is worn, finally makes two holes with the method for corrosion above N-type region, is distinguished on the insulating layer with the method for metallization
And three electrodes are made in two holes：Grid 20, source electrode 21 and drain electrode 22, source electrode 21 and drain electrode 22 correspond to two N-type regions respectively
And the wordline that grid 20 is storage unit, drain electrode 22 are the bit line of storage unit.Further, grid 20 is again including control gate
201st, polysilicon interlayer dielectric 202 (Inter Poly Dielectric, IPD), floating grid 203, and floating grid 203
Store charge.Flash memory stores data by changing the quantity of electronics in floating grid 203.
When being read to the storage unit in flash memory, after applying read voltage, storage unit generates electricity
Stream will flow through the electric current of storage unit with reference current is by current comparator compared with, if current comparator output is high electric
It is flat, then it represents that for the current storage state of the storage unit for erasing state, that is, the data read are " 1 "；If current comparator is defeated
Go out low level, then it represents that the current storage state of the storage unit is programmed state, that is, the data read are " 0 ".Existing storage
The read method of unit is to apply fixed read voltage to storage unit, but the characteristic due to memory chip in itself, when depositing
When the temperature of memory chip is higher than certain value or less than certain value, the threshold voltage of storage unit can change, if read
Take voltage certain, the variation of threshold voltage can cause the electric current for flowing through storage unit to have greatly changed, if at this point, electric current
The reference current of comparator immobilizes, then cannot correctly be read as a result, the current storage shape of storage unit can not be learnt
State affects the reading performance of storage unit.
The content of the invention
The embodiment of the present invention provides a kind of read method and device of storage unit, different according to memory chip to realize
Temperature determine different reference currents, and then ensure correctly read as a result, improve storage unit reading performance.
In a first aspect, an embodiment of the present invention provides a kind of read method of storage unit, this method includes：
It receives and reads instruction；
Reference current is determined according to the current temperature characteristic of the Current Temperatures of memory chip and storage unit；
Apply to the storage unit of the memory chip and read voltage, so that the storage unit generates electric current；
The state of the storage unit is determined according to the reference current and the electric current for flowing through the storage unit.
Further, determined according to the current temperature characteristic of the Current Temperatures of memory chip and storage unit with reference to electricity
Stream, including：
If the Current Temperatures of the memory chip less than low temperature preset value and storage unit current temperature characteristic for just,
Reference current value is reduced based on reference current value；
If the Current Temperatures of the memory chip are negative less than the current temperature characteristic of low temperature preset value and storage unit,
Reference current value is increased based on reference current value；
If the Current Temperatures of the memory chip higher than high temperature preset value and storage unit current temperature characteristic for just,
Reference current value is increased based on reference current value；
If the Current Temperatures of the memory chip are negative higher than the current temperature characteristic of high temperature preset value and storage unit,
Reference current value is reduced based on reference current value.
Further, it is described that reference current value is reduced based on reference current value, including：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
Further, it is described that reference current value is increased based on reference current value, including：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
Further, it is described according to the reference current and to flow through the electric current of the storage unit and determine that the storage is single
The state of member, including：
If the electric current for flowing through the storage unit is more than the reference current, the storage unit is programmed state；
If the electric current for flowing through the storage unit is less than the reference current, the storage unit is erasing state.
Second aspect, the embodiment of the present invention additionally provide a kind of reading device of storage unit, and described device includes：
Receiving module reads instruction for receiving；
Reference current determining module, it is special for the Current Temperatures according to memory chip and the current temperature of storage unit
Property determines reference current；
Apply module, voltage is read for applying to the storage unit of the memory chip, so that the storage unit
Generate electric current；
Storage state determining module, for according to the reference current and flowing through the electric current of the storage unit and determining institute
State the state of storage unit.
Further, the reference current determining module includes：
Reduction unit, if being less than low temperature preset value and the electric current of storage unit for the Current Temperatures of the memory chip
Temperature characterisitic is just, to reduce reference current value based on reference current value；Or
If it is higher than high temperature preset value and the current temperature characteristic of storage unit for the Current Temperatures of the memory chip
It is negative, reference current value is reduced based on reference current value；
Increasing unit, if being higher than high temperature preset value and the electric current of storage unit for the Current Temperatures of the memory chip
Temperature characterisitic is just, to increase reference current value based on reference current value；Or
If it is less than low temperature preset value and the current temperature characteristic of storage unit for the Current Temperatures of the memory chip
It is negative, reference current value is increased based on reference current value.
Further, the reduction unit is specifically used for：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
Further, the increasing unit is specifically used for：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
Further, the storage state determining module includes：
Programmed state determination unit, if being more than the reference current, institute for the electric current for flowing through the storage unit
Storage unit is stated as programmed state；
State determination unit is wiped, if being less than the reference current, institute for the electric current for flowing through the storage unit
Storage unit is stated as erasing state.
A kind of read method of storage unit provided in an embodiment of the present invention reads instruction by receiving；According to memory
The Current Temperatures of chip and the current temperature characteristic of storage unit determine reference current；To the storage list of the memory chip
Member, which applies, reads voltage, so that the storage unit generates electric current；According to the reference current and flow through the storage unit
Electric current determine the storage unit state technological means, realize and difference determined according to the different temperature of memory chip
Reference current, and then ensure correctly read as a result, improve storage unit reading performance.
Description of the drawings
Fig. 1 is a kind of structure chart of metal oxide semiconductcor field effect transistor as storage unit in flash chip；
Fig. 2 is a kind of read method flow chart of storage unit in the embodiment of the present invention one；
Fig. 3 is a kind of structure diagram of reference circuit in the embodiment of the present invention one；
Fig. 4 is a kind of structure diagram of reference current generating circuit in the embodiment of the present invention one；
Fig. 5 is a kind of structure diagram of the reading device of storage unit in the embodiment of the present invention two.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrated only in description, attached drawing.
Embodiment one
Fig. 2 is a kind of read method flow chart for storage unit that the embodiment of the present invention one provides, and the present embodiment is applicable
In situation about when the temperature of memory chip often changes, being read to the storage unit of memory chip.
Referring to Fig. 2, the read method of storage unit provided in this embodiment specifically comprises the following steps：
Step 110 receives and reads instruction.
By writing program code flash memory can be controlled to carry out three big primary operationals, be read operation respectively, write
Operate (i.e. programming operation) and erasing operation；Wherein, the principle of read operation is read by applying to the grid of storage unit
Voltage can generate electric current at this time in storage unit, final to obtain working as storage unit by this electric current compared with reference current
Preceding state is erasing state or programmed state, if the result read is " 0 ", then it represents that the current state of storage unit is programmed state,
If the result read is " 1 ", then it represents that the current state of storage unit is erasing state.
Step 120 is determined according to the Current Temperatures of memory chip and the current temperature characteristic of storage unit with reference to electricity
Stream.
Due to, when temperature is higher or relatively low, the threshold voltage V of storage unitth, electron mobility μxIt is single with storage
The drain-source voltage V of memberdsIt will change, when applying fixed reading voltage to the grid of storage unit, between grid source
Voltage difference VgsIt remains unchanged, therefore Vgs-Vth(threshold voltage V can be increased as temperature increasesthSubtract with the increase of temperature
It is small), electron mobility μxIncrease with temperature and become smaller, drain-source voltage VdsAlso can change with varying with temperature；Three of the above shadow
Ring factor --- threshold voltage Vth, electron mobility μxWith drain-source voltage VdsFollowing several situations are may result in, the first, it deposits
The electric current of storage unit reduces with the increase of temperature, second, and the electric current of storage unit is constant with the increase of temperature, the third,
The electric current of storage unit increases with the increase of temperature.For first and the third, the electric current for flowing through storage unit changes,
It is correctly read to obtain as a result, then reference current needs follow the variation for the electric current for flowing through storage unit and change, so
The design complexities of comparison circuit can be increased, increase reads difficulty, affects reading performance.It is special for the temperature of storage unit
Property, it can be obtained by measuring single storage unit in same process, (wherein, the temperature characterisitic after temperature characterisitic confirms
Including：The electric current of positive temperature characterisitic, i.e. storage unit increases with the rise of temperature, reduces with the reduction of temperature；Negative temperature
The electric current of characteristic, i.e. storage unit reduces with the rise of temperature, increases with the reduction of temperature), by according to storage core
The Current Temperatures of piece determine corresponding reference current, can reduce the design complexities of comparison circuit.Specific such as background technology
In description：When being read to the storage unit in flash memory, after applying read voltage, storage unit generates
Electric current will flow through the electric current of storage unit compared with reference current is by current comparator, if current comparator output is high
Level, then it represents that for the current storage state of the storage unit for erasing state, that is, the data read are " 1 "；If current comparator
Export low level, then it represents that the current storage state of the storage unit is programmed state, that is, the data read are " 0 "；If it flows through
When the electric current of storage unit changes, still using changeless reference current, then cannot correctly be read as a result,
Reading performance is influenced, therefore, by the Current Temperatures according to memory chip to flowing through the influence of the electric current of storage unit, is determined
Reference current, and then improve the reading performance of storage unit.
Illustratively, determine to refer in the Current Temperatures according to memory chip and the current temperature characteristic of storage unit
Before electric current, further include：
The Current Temperatures of the memory chip are detected by temperature sensor.
It should be noted that cause entire core applying addition temperature sensor in alive electrical voltage system to storage unit
The area of piece is increased and little, by test determine increased area compared to entire flash chip area only about
0.3%-3%.
Illustratively, determined according to the current temperature characteristic of the Current Temperatures of memory chip and storage unit with reference to electricity
Stream, can include：
If the Current Temperatures of the memory chip less than low temperature preset value and storage unit current temperature characteristic for just,
Reference current value is reduced based on reference current value；
If the Current Temperatures of the memory chip are negative less than the current temperature characteristic of low temperature preset value and storage unit,
Reference current value is increased based on reference current value；
If the Current Temperatures of the memory chip higher than high temperature preset value and storage unit current temperature characteristic for just,
Reference current value is increased based on reference current value；
If the Current Temperatures of the memory chip are negative higher than the current temperature characteristic of high temperature preset value and storage unit,
Reference current value is reduced based on reference current value.
Wherein, the temperature characterisitic is just, to represent that the electric current of storage unit increases with the rise of temperature, with the drop of temperature
It is low and reduce；Temperature characterisitic is negative, represents that the electric current of storage unit reduces with the rise of temperature, increases with the reduction of temperature
Greatly.The low temperature preset value be usually arranged as other numerical value near 0 degree Celsius, certain 0 degree Celsius can also, such as 0.5 or
- 1 degree Celsius of person, the present embodiment are not limited, it is necessary to be passed through according to the manufacture craft of memory chip a large amount of
Experiment determine.The current temperature characteristic of storage unit under same technique can be obtained according to the test of single storage unit,
If memory cell current increases with the rise of temperature, then it is small when the electric current of storage unit is than room temperature in low temperature, be
It obtains and correctly reads to realize as a result, reference current value can be reduced by being based on reference current value.If memory cell current
Reduce with the rise of temperature, then it is big when the electric current of storage unit is than room temperature in low temperature, correctly read knot to obtain
Fruit can increase reference current value realization by being based on reference current value.
Same reason, the high temperature preset value are usually arranged as any number near 70 degrees Celsius or 70, this reality
Example is applied to be not limited thereof, it is necessary to definite by largely testing according to the manufacture craft of memory chip.Under same technique
The current temperature characteristic of storage unit can be obtained according to the test of single storage unit, if memory cell current is with temperature
The rise of degree and increase, then it is at high temperature, big when the electric current of storage unit is than room temperature, in order to obtain correctly read as a result, can
To increase reference current value realization by being based on reference current value.If memory cell current reduces with the rise of temperature,
So at high temperature, it is small when the electric current of storage unit is than room temperature, it is correctly read as a result, can be by being based on benchmark electricity to obtain
Flow valuve reduces reference current value and realizes.
If the Current Temperatures of the memory chip both not less than the low temperature preset value, are also preset not higher than the high temperature
Value, then it is assumed that be under room temperature, directly using reference current value as with reference to electric current；The reference current value needs to combine
The manufacture craft of memory chip, it is definite by largely testing.
Illustratively, it is described that reference current value is reduced based on reference current value, including：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
It is described that reference current value is increased based on reference current value, including：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
A kind of structure diagram of reference circuit shown in Fig. 3 is specifically may refer to, wherein, band-gap reference module 45 is to use
In generating reference current, the process that this module generates reference current is not affected by temperature, when the electricity for needing increase reference circuit
During pressure, it can be realized by closure switch 41, switch 42, switch 43 or switch 44, according to the big of required target voltage Vbias
Which switch small selection is closed, and certainly similar number of switches can also set more.Reference current shown in Figure 4
The structure diagram of generation circuit, current output terminal Iref is connected with the input terminal of current comparator, for providing reference current,
Adjust current branch controls gear as gear 1, gear 2, gear 3 and gear 4, can be with when needing to increase reference current value
Certain in closure gear 1, gear 2, gear 3 and gear 4 is several or is all closed, and the quantity of similar gear can be set more
It is more.
130th, apply to the storage unit of the memory chip and read voltage, so that the storage unit generates electric current.
Voltage is read specifically, applying to the storage unit of the memory chip, the source electrode of storage unit is normally grounded,
Electric current is generated using the voltage official post storage unit between grid source, by by the defeated of the drain electrode of storage unit and current comparison circuit
Enter end to be connected, by the electric current for flowing through storage unit compared with reference current, obtain the final reading result of storage unit.
140th, according to the reference current and flow through the electric current of the storage unit and determine the state of the storage unit.
Illustratively, it is described according to the reference current and to flow through the electric current of the storage unit and determine that the storage is single
The state of member can specifically include：
If the electric current for flowing through the storage unit is more than the reference current, the storage unit is programmed state；
If the electric current for flowing through the storage unit is less than the reference current, the storage unit is erasing state.
A kind of read method of storage unit provided in this embodiment reads instruction by receiving；According to memory chip
Current Temperatures determine reference current；Apply to the storage unit of the memory chip and read voltage, so that the storage is single
Member generates electric current；The state of the storage unit is determined according to the reference current and the electric current for flowing through the storage unit
Technological means realizes and determines different reference currents according to the different temperature of memory chip, and then ensures correctly to read knot
Fruit improves the reading performance of storage unit.
Embodiment two
Fig. 5 be a kind of structure diagram of the reading device of storage unit provided by Embodiment 2 of the present invention, described device
It specifically includes：
Receiving module 610, reference current determining module 620 apply module 630 and storage state determining module 640；
Wherein, instruction is read in receiving module 610 for receiving；Reference current determining module 620, for according to memory
The Current Temperatures of chip and the current temperature characteristic of storage unit determine reference current；Apply module 630, for being deposited to described
The storage unit of memory chip, which applies, reads voltage, so that the storage unit generates electric current；Storage state determining module 640,
For according to the reference current and flowing through the electric current of the storage unit and determining the state of the storage unit.
Further, reference current determining module 620 includes：
Reduction unit, if being less than low temperature preset value and the electric current of storage unit for the Current Temperatures of the memory chip
Temperature characterisitic is just, to reduce reference current value based on reference current value；Or
If it is higher than high temperature preset value and the current temperature characteristic of storage unit for the Current Temperatures of the memory chip
It is negative, reference current value is reduced based on reference current value；
Increasing unit, if being higher than high temperature preset value and the electric current of storage unit for the Current Temperatures of the memory chip
Temperature characterisitic is just, to increase reference current value based on reference current value；Or
If it is less than low temperature preset value and the current temperature characteristic of storage unit for the Current Temperatures of the memory chip
It is negative, reference current value is increased based on reference current value.
Further, the reduction unit is specifically used for：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
The increasing unit is specifically used for：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
Further, storage state determining module 640 includes：
Programmed state determination unit, if being more than the reference current, institute for the electric current for flowing through the storage unit
Storage unit is stated as programmed state；
State determination unit is wiped, if being less than the reference current, institute for the electric current for flowing through the storage unit
Storage unit is stated as erasing state.
A kind of reading device of storage unit provided in this embodiment reads instruction by receiving；According to memory chip
Current Temperatures and the current temperature characteristic of storage unit determine reference current；It is applied to the storage unit of the memory chip
Add reading voltage, so that the storage unit generates electric current；According to the reference current and flow through the electricity of the storage unit
Stream determines the technological means of the state of the storage unit, realizes and determines different ginsengs according to the different temperature of memory chip
Electric current is examined, and then ensures correctly to read as a result, improving the reading performance of storage unit.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various apparent variations,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of read method of storage unit, which is characterized in that including：
It receives and reads instruction；
Reference current is determined according to the current temperature characteristic of the Current Temperatures of memory chip and storage unit；
Apply to the storage unit of the memory chip and read voltage, so that the storage unit generates electric current；
The state of the storage unit is determined according to the reference current and the electric current for flowing through the storage unit.
2. the according to the method described in claim 1, it is characterized in that, Current Temperatures and storage according to memory chip
The current temperature characteristic of unit determines reference current, including：
If the Current Temperatures of the memory chip are just, to be based on less than low temperature preset value and the current temperature characteristic of storage unit
Reference current value reduces reference current value；
If the Current Temperatures of the memory chip are negative less than the current temperature characteristic of low temperature preset value and storage unit, it is based on
Reference current value increases reference current value；
If the Current Temperatures of the memory chip are just, to be based on higher than high temperature preset value and the current temperature characteristic of storage unit
Reference current value increases reference current value；
If the Current Temperatures of the memory chip are negative higher than the current temperature characteristic of high temperature preset value and storage unit, it is based on
Reference current value reduces reference current value.
3. according to the method described in claim 2, it is characterized in that, described reduce reference current value, bag based on reference current value
It includes：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
4. according to the method described in claim 2, it is characterized in that, described increase reference current value, bag based on reference current value
It includes：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
5. according to the method described in claim 1, it is characterized in that, described according to the reference current and flow through the storage
The electric current of unit determines the state of the storage unit, including：
If the electric current for flowing through the storage unit is more than the reference current, the storage unit is programmed state；
If the electric current for flowing through the storage unit is less than the reference current, the storage unit is erasing state.
6. a kind of reading device of storage unit, which is characterized in that including：
Receiving module reads instruction for receiving；
Reference current determining module, it is true for the Current Temperatures according to memory chip and the current temperature characteristic of storage unit
Determine reference current；
Apply module, voltage is read for applying to the storage unit of the memory chip, so that the storage unit generates
Electric current；
Storage state determining module, for according to the reference current and flow through the storage unit electric current determine described in deposit
The state of storage unit.
7. device according to claim 6, which is characterized in that the reference current determining module includes：
Reduction unit, if being less than low temperature preset value and the current temperature of storage unit for the Current Temperatures of the memory chip
Characteristic is just, to reduce reference current value based on reference current value；Or
If the Current Temperatures for the memory chip are negative higher than the current temperature characteristic of high temperature preset value and storage unit,
Reference current value is reduced based on reference current value；
Increasing unit, if being higher than high temperature preset value and the current temperature of storage unit for the Current Temperatures of the memory chip
Characteristic is just, to increase reference current value based on reference current value；Or
If the Current Temperatures for the memory chip are negative less than the current temperature characteristic of low temperature preset value and storage unit,
Reference current value is increased based on reference current value.
8. device according to claim 7, which is characterized in that the reduction unit is specifically used for：
It reduces the voltage of reference circuit or adjusts the control gear of current branch, to reduce reference current value.
9. device according to claim 7, which is characterized in that the increasing unit is specifically used for：
Increase the voltage of reference circuit or adjust the control gear of current branch, to increase reference current value.
10. device according to claim 6, which is characterized in that the storage state determining module includes：
Programmed state determination unit, it is described to deposit if being more than the reference current for the electric current for flowing through the storage unit
Storage unit is programmed state；
State determination unit is wiped, it is described to deposit if being less than the reference current for the electric current for flowing through the storage unit
Storage unit is erasing state.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192235A (en) * | 2018-10-17 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | The reference current control circuit of memory |
| CN110659146A (en) * | 2019-08-05 | 2020-01-07 | 广州妙存科技有限公司 | Temperature-based flash memory re-reading method |
| WO2021099859A1 (en) * | 2019-11-22 | 2021-05-27 | International Business Machines Corporation | Method and system to improve read reliability in memory devices |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10255492A (en) * | 1997-03-10 | 1998-09-25 | Sanyo Electric Co Ltd | Temperature detecting device for non-volatile memory |
| US20070047335A1 (en) * | 2005-08-26 | 2007-03-01 | Toru Tanzawa | Method and apparatus for generating temperature compensated read and verify operations in flash memories |
| CN101496108A (en) * | 2006-07-28 | 2009-07-29 | 飞思卡尔半导体公司 | Memory circuit using a reference for sensing |
| CN101630532A (en) * | 2008-07-17 | 2010-01-20 | 上海华虹Nec电子有限公司 | Sensitive amplifier used for electrically erasable read only memory and realization method thereof |
| CN101859158A (en) * | 2009-04-08 | 2010-10-13 | 台湾积体电路制造股份有限公司 | Reference current circuit and generating method thereof |
| CN102160119A (en) * | 2008-09-19 | 2011-08-17 | 桑迪士克公司 | Data state-based temperature compensation during sensing in non-volatile memory |
| US20110286281A1 (en) * | 2010-05-21 | 2011-11-24 | Yield Microelectronics Corp. | Reference current generator used for programming and erasing of non-volatile memory |
| CN102682841A (en) * | 2011-03-02 | 2012-09-19 | 苹果公司 | Using temperature sensors with a memory device |
| CN102893337A (en) * | 2010-02-19 | 2013-01-23 | 桑迪士克技术有限公司 | Non-volatile storage with temperature compensation based on neighbor state information |
| US20160099049A1 (en) * | 2014-10-02 | 2016-04-07 | Samsung Electronics Co., Ltd. | Resistive memory device, resistive memory system, and operating method thereof |
-
2016
- 2016-11-24 CN CN201611051313.5A patent/CN108109660A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10255492A (en) * | 1997-03-10 | 1998-09-25 | Sanyo Electric Co Ltd | Temperature detecting device for non-volatile memory |
| US20070047335A1 (en) * | 2005-08-26 | 2007-03-01 | Toru Tanzawa | Method and apparatus for generating temperature compensated read and verify operations in flash memories |
| CN101496108A (en) * | 2006-07-28 | 2009-07-29 | 飞思卡尔半导体公司 | Memory circuit using a reference for sensing |
| CN101630532A (en) * | 2008-07-17 | 2010-01-20 | 上海华虹Nec电子有限公司 | Sensitive amplifier used for electrically erasable read only memory and realization method thereof |
| CN102160119A (en) * | 2008-09-19 | 2011-08-17 | 桑迪士克公司 | Data state-based temperature compensation during sensing in non-volatile memory |
| CN101859158A (en) * | 2009-04-08 | 2010-10-13 | 台湾积体电路制造股份有限公司 | Reference current circuit and generating method thereof |
| CN102893337A (en) * | 2010-02-19 | 2013-01-23 | 桑迪士克技术有限公司 | Non-volatile storage with temperature compensation based on neighbor state information |
| US20110286281A1 (en) * | 2010-05-21 | 2011-11-24 | Yield Microelectronics Corp. | Reference current generator used for programming and erasing of non-volatile memory |
| CN102682841A (en) * | 2011-03-02 | 2012-09-19 | 苹果公司 | Using temperature sensors with a memory device |
| US20160099049A1 (en) * | 2014-10-02 | 2016-04-07 | Samsung Electronics Co., Ltd. | Resistive memory device, resistive memory system, and operating method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109192235A (en) * | 2018-10-17 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | The reference current control circuit of memory |
| CN110659146A (en) * | 2019-08-05 | 2020-01-07 | 广州妙存科技有限公司 | Temperature-based flash memory re-reading method |
| WO2021099859A1 (en) * | 2019-11-22 | 2021-05-27 | International Business Machines Corporation | Method and system to improve read reliability in memory devices |
| US11074968B2 (en) | 2019-11-22 | 2021-07-27 | International Business Machines Corporation | Method and system to improve read reliability in memory devices |
| GB2605543A (en) * | 2019-11-22 | 2022-10-05 | Ibm | Method and system to improve read reliability in memory devices |
| GB2605543B (en) * | 2019-11-22 | 2024-01-17 | Ibm | Method and system to improve read reliability in memory devices |
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