CN108109646A - The programmed method and device of a kind of storage unit - Google Patents
The programmed method and device of a kind of storage unit Download PDFInfo
- Publication number
- CN108109646A CN108109646A CN201611051344.0A CN201611051344A CN108109646A CN 108109646 A CN108109646 A CN 108109646A CN 201611051344 A CN201611051344 A CN 201611051344A CN 108109646 A CN108109646 A CN 108109646A
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- Prior art keywords
- program voltage
- memory chip
- current
- storage unit
- current temperatures
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Abstract
The invention discloses the programmed methods and device of a kind of storage unit, and the described method includes receive programming instruction；Current program voltage is determined according to the Current Temperatures of memory chip；Apply the current program voltage to the storage unit of the memory chip.After receiving programming instruction, current program voltage is determined according to the Current Temperatures of memory chip for a kind of programmed method of storage unit provided in an embodiment of the present invention；And apply the technological means of the current program voltage to the storage unit of the memory chip, improve the problem of program speed is slack-off under high temperature, at the same improve program speed under low temperature it is too fast caused by programming it is too strong the problem of, improve program performance.
Description
Technical field
The present embodiments relate to technical field of memory, and in particular to the programmed method and device of a kind of storage unit.
Background technology
Nonvolatile flash memory medium (nor flash/nand flash) is a kind of very common storage chip, has concurrently and deposits at random
Reservoir (Random Access Memory, RAM) and the advantages of read-only memory (Read-Only Memory, ROM), data are fallen
Electricity will not be lost, be it is a kind of can carry out the erasable memory of electricity in system, while its high integration and low cost make it
The market mainstream.
In Flash chip, a storage unit can see a metal oxide semiconductcor field effect transistor as
(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET).Fig. 1 is a kind of common
MOSFET structure figure, including grid 20, source electrode 21, drain electrode 22, p-type trap 23, N-type trap 25, P-type silicon Semiconductor substrate 26 and tunnel
Oxide layer 24 is worn, mutual connection is：P-type silicon Semiconductor substrate 26 diffuses out two N-type regions, the 23 top covering of p-type trap
One layer of tunnel oxide 24 finally makes two holes above N-type region by the method for corrosion, is distinguished by the method for metallization
Three electrodes are made on the insulating layer and in two holes：Grid 20, source electrode 21 and drain electrode 22, source electrode 21 and drain electrode 22 correspond to respectively
Two N-type regions and the wordline that grid 20 is storage unit, drain electrode 22 are the bit line of storage unit.Further, grid 20 wraps again
Control gate 201, polysilicon interlayer dielectric 202 (Inter-Poly Dielectric, IPD), floating grid 203 are included, and it is floating
Moving grid pole 203 can store charge.When being programmed operation to a storage unit, applied respectively to grid 20 and drain electrode 22
Add corresponding program voltage, at this point, have electric current flows to source electrode 21 from drain electrode 22, electronics flows to the way of drain electrode 22 from source electrode 21
In, understand some and flow to floating grid 203, when the electronics in floating grid 203 reaches certain amount, this storage unit is just
Success is programmed, i.e., this storage unit is successfully write 0.
But the lattice in the substance due to forming storage unit under hot environment shakes aggravation, potential barrier enhancing and electricity
Transport factor dies down, and electron transition is caused to be more difficult to floating grid 203, if applying the programming electricity identical under room temperature
Pressure, program speed can be very slow, and the time for programming occupancy can be elongated, it could even be possible to can cause program fail, influences program performance.
And potential barrier weakens under low temperature environment and electron mobility becomes strong, being conducive to electronics flows to floating grid 203, if apply with often
Identical program voltage under temperature, program speed can be very fast, and under identical programming time, it is too strong to be easy to cause programming, for programming very
When strong storage unit is wiped, wiping can become slower, and then influence erasing performance.
The content of the invention
The present invention provides a kind of programmed method and device of storage unit, and to improve, program speed under high temperature is slack-off to ask
Topic improves program performance.
In a first aspect, an embodiment of the present invention provides a kind of programmed method of storage unit, this method includes：
Receive programming instruction；
Current program voltage is determined according to the Current Temperatures of memory chip；
Apply the current program voltage to the storage unit of the memory chip.
Further, before the Current Temperatures according to memory chip determine current program voltage, further include：
The Current Temperatures of the memory chip are detected by temperature sensor.
Further, the Current Temperatures according to memory chip determine current program voltage, including：
If the Current Temperatures of the memory chip are higher than high temperature preset value, increase programming on the basis of giving tacit consent to program voltage
Program voltage after increase is determined as the current program voltage by voltage；
If the Current Temperatures of the memory chip are less than low temperature preset value, reduce programming on the basis of giving tacit consent to program voltage
Program voltage after reduction is determined as the current program voltage by voltage.
Further, the Current Temperatures according to memory chip determine current program voltage, further include：
If the Current Temperatures of the memory chip both not less than the low temperature preset value, are also preset not higher than the high temperature
Value, then using the acquiescence program voltage as the current program voltage.
Further, the storage unit to the memory chip applies the current program voltage, including：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
Second aspect, the embodiment of the present invention additionally provide a kind of programmer of storage unit, and described device includes：
Receiving module, for receiving programming instruction；
Determining module, for determining current program voltage according to the Current Temperatures of memory chip；
Apply module, for applying the current program voltage to the storage unit of the memory chip.
Further, described device further includes：Detection module, for true in the Current Temperatures according to memory chip
Before settled preceding program voltage, the Current Temperatures of the memory chip are detected by temperature sensor.
Further, the determining module includes：
Increasing unit, if being higher than high temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage
On the basis of increase program voltage；
First determination unit, for the program voltage after increasing to be determined as the current program voltage.
Reduction unit, if being less than low temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage
On the basis of reduce program voltage；
Second determination unit, for the program voltage after reducing to be determined as the current program voltage.
Further, the determining module, further includes：
3rd determination unit, if being both not less than the low temperature preset value for the Current Temperatures of the memory chip,
Not higher than the high temperature preset value, then using the acquiescence program voltage as the current program voltage.
Further, the application module is specifically used for：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
The programmed method of a kind of storage unit provided in an embodiment of the present invention, after receiving programming instruction, according to storage
The Current Temperatures of device chip determine current program voltage；And apply the current programming to the storage unit of the memory chip
The technological means of voltage reduces influence of the temperature change to erasing speed, improves program performance.
Description of the drawings
Fig. 1 is a kind of structure chart of metal oxide semiconductcor field effect transistor as storage unit in flash chip；
Fig. 2 is a kind of programmed method flow diagram of storage unit in the embodiment of the present invention one；
Fig. 3 is a kind of programmed method flow diagram of storage unit in the embodiment of the present invention two；
Fig. 4 is a kind of structure diagram of the programmer of storage unit in the embodiment of the present invention three.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrated only in description, attached drawing.
Embodiment one
Fig. 2 is a kind of programmed method flow diagram for storage unit that the embodiment of the present invention one provides, and the present embodiment can
Suitable for the situation of operation is programmed under different temperatures to storage unit.Referring to Fig. 2, storage unit provided in this embodiment
Programmed method specifically comprises the following steps：
110th, programming instruction is received.
By writing program code flash memory can be controlled to carry out three big primary operationals, be read operation respectively, write behaviour
Make (i.e. programming operation) and erasing operation, wherein programming operation is specifically to complete to write 0 operation to storage unit.To storage unit
The basic principle for being programmed operation is to apply corresponding program voltage by the grid respectively to storage unit and drain electrode, is applied
Add and electric current is had after the program voltage flow to source electrode from drain electrode, electronics understands some stream from the way of source electrode flow direction drain electrode
To floating grid, when the electronics in floating grid reaches certain amount, this storage unit is just programmed success, i.e. this storage is single
Member is successfully write 0.The concrete structure of storage unit may refer to structure diagram shown in FIG. 1.
120th, current program voltage is determined according to the Current Temperatures of memory chip.
Due to when temperature is higher, forming the lattice vibrations aggravation in the substance of storage unit, potential barrier enhancing and electricity
Transport factor reduces, and electron transition is caused to be more difficult to floating grid, influences the speed that electronics flows to floating grid, therefore
If applying the program voltage identical under room temperature at high temperature, program speed can be very slow, and the time for programming occupancy can be elongated, very
Extremely it is possible that program fail can be caused, program performance is influenced；Therefore it is true according to the different temperatures of chip in order to improve program performance
Fixed different program voltage, can suitably increase program voltage, so that the grid leak pressure of storage unit when temperature is very high
Difference increases, and under identical distance, pressure difference is bigger, and electric field strength is bigger, and the movement velocity of electronics will be accelerated, and then shortens electronics
The time of floating grid is transitted to by the source electrode of storage unit, improves program speed, improves program performance.
Likewise, due to temperature it is relatively low when, form in the substance of storage unit lattice vibrations weaken, potential barrier reduce
And electron mobility increase, electron transition is caused to be become easier to floating grid, accelerates the speed that electronics flows to floating grid
It spends, the translational speed of electronics can become faster under identical electric field strength, so if applying the volume identical under room temperature at low temperature
Journey voltage, program speed can be very fast, under identical programming time, easy programmed stronger, the stronger program storage of storage unit
Unit needs the longer time to go to wipe when wiping；Therefore in order to improve storage unit overall performance, according to chip not
It is synthermal to determine different program voltages, it can suitably reduce program voltage when temperature is very low, so that storage unit
Grid leak pressure difference reduce, under identical distance, pressure difference is smaller, and electric field strength is smaller, and the movement velocity of electronics will be reduced suitably,
And then prevent programming too strong, improve program performance.
Illustratively, before the Current Temperatures according to memory chip determine current program voltage, further include：
The Current Temperatures of the memory chip are detected by temperature sensor.
It should be noted that cause entire core applying addition temperature sensor in alive electrical voltage system to storage unit
The area of piece is increased and little, by test determine increased area compared to entire flash chip area only about
0.6%-3%.
130th, the current program voltage is applied to the storage unit of the memory chip.
Illustratively, the storage unit to the memory chip applies the current program voltage, including：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
The programmed method of a kind of storage unit provided in an embodiment of the present invention, after receiving programming instruction, according to storage
The Current Temperatures of device chip determine current program voltage；And apply the current programming to the storage unit of the memory chip
The technological means of voltage reduces influence of the temperature change to erasing speed, improves program performance.
Embodiment two
Fig. 3 is a kind of programmed method flow diagram of storage unit provided by Embodiment 2 of the present invention, and the present embodiment exists
Further optimized on the basis of embodiment one, be particularly suitable for when the temperature change of memory chip program speed being caused to be sent out
The situation for changing, the benefit of optimization are realized when memory chip temperature is higher than high temperature preset value or pre- less than low temperature
If it during value, determines the program voltage with the Temperature Matching, to ensure the program speed under high temperature, and improves programmed under low temperature
The problem of strong, improves program performance.Fig. 3 specifically is may refer to, the method specifically comprises the following steps：
210th, programming instruction is received.
If the Current Temperatures of 220a, the memory chip are higher than high temperature preset value, increased on the basis of giving tacit consent to program voltage
Program voltage after increase is determined as the current program voltage by big program voltage.
Wherein, the acquiescence program voltage refers specifically to common program voltage under room temperature, for example, the acquiescence program voltage
It can be 7V, 3V, i.e., apply the voltage of 7V to the grid of storage unit, apply the voltage of 3V to drain electrode；The room temperature is often referred to
Less than 70 degrees Celsius 0 degree Celsius or more of temperature；The high temperature preset value can be near 70 degrees Celsius or 70 degrees Celsius
Arbitrary temp, such as 71 degrees Celsius；When the Current Temperatures of memory chip are higher than high temperature preset value, such as institute in embodiment one
It states, program speed when program speed can be than room temperature is slow, therefore, in order to improve program speed, is allowed to and the programming speed under room temperature
Degree is suitable, ensures program performance, can increase program voltage, the increase programming on the basis of common program voltage under room temperature
The purpose of voltage is the voltage difference bigger made between the grid leak of storage unit, and then improves program speed, therefore can make to be added to
The voltage bigger of grid, such as 7.5V is increased to, make the voltage also bigger, such as increase to 3.5V for being added to drain electrode.
As it is known by the man skilled in the art that the voltage 7V that is applied on the grid of storage unit and being applied to storage unit
Drain electrode on voltage 3V be preferred exemplary value scope, and be not limited thereof.
If the Current Temperatures of 220b, the memory chip are less than low temperature preset value, subtracted on the basis of giving tacit consent to program voltage
Program voltage after reduction is determined as the current program voltage by small program voltage.
Wherein, the low temperature preset value can be the arbitrary temp near 0 degree Celsius or 0 degree Celsius, such as -1 Celsius
Degree；When the Current Temperatures of memory chip are less than low temperature preset value, as described in embodiment one, when program speed can be than room temperature
Program speed it is fast, it is easy to occur programming it is too strong the phenomenon that, therefore, in order to improve programming it is too strong the phenomenon that, can by with
Reduce program voltage on the basis of common program voltage under room temperature, be allowed to suitable with the program speed under room temperature, ensure programmatic
Energy.The purpose for reducing program voltage is the voltage difference smaller made between the grid leak of storage unit, therefore can make to be added to grid
The voltage smaller of pole, such as 6.5V is reduced to, make the voltage bigger for being added to drain electrode, such as increase to 3.5V.
Further, if the Current Temperatures of the memory chip are both not less than the low temperature preset value, also not higher than institute
High temperature preset value is stated, then the acquiescence program voltage is determined as the current program voltage.
230th, the current program voltage is applied to the storage unit of the memory chip.
The programmed method of a kind of storage unit provided in an embodiment of the present invention, on the basis of above-described embodiment technical solution
On, if the Current Temperatures of the memory chip are higher than high temperature preset value, increase program voltage on the basis of giving tacit consent to program voltage,
If the Current Temperatures of the memory chip are less than low temperature preset value, reduce program voltage on the basis of giving tacit consent to program voltage, change
Be apt to the problem of program speed is slack-off under high temperature, at the same improve program speed under low temperature it is too fast caused by programming too strong ask
Topic, improves program performance.
Embodiment three
A kind of structure diagram of the programmer for storage unit that Fig. 4 provides for the embodiment of the present invention three, described device
It specifically includes：
Receiving module 410, determining module 420 and application module 430；
Wherein, receiving module 410, for receiving programming instruction；Determining module 420, for working as according to memory chip
Preceding temperature determines current program voltage；Apply module 430, it is described current for applying to the storage unit of the memory chip
Program voltage.
Further, described device can also include detection module, in the current temperature according to memory chip
Before degree determines current program voltage, the Current Temperatures of the memory chip are detected by temperature sensor.
Further, it is determined that module 420 can include：
Increasing unit, if being higher than high temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage
On the basis of increase program voltage；
First determination unit, for the program voltage after increasing to be determined as the current program voltage；
Reduction unit, if being less than low temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage
On the basis of reduce program voltage；
Second determination unit, for the program voltage after reducing to be determined as the current program voltage.
3rd determination unit, if being both not less than the low temperature preset value for the Current Temperatures of the memory chip,
Not higher than the high temperature preset value, using acquiescence program voltage as the current program voltage.
Further, apply module 430 to be specifically used for：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
The programmer of a kind of storage unit provided in an embodiment of the present invention, after receiving programming instruction, according to storage
The Current Temperatures of device chip determine current program voltage；And apply the current programming to the storage unit of the memory chip
The technological means of voltage reduces influence of the temperature change to erasing speed, improves the problem of program speed is slack-off under high temperature,
Simultaneously improve program speed under low temperature it is too fast caused by programming it is too strong the problem of, improve program performance.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various apparent variations,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of programmed method of storage unit, which is characterized in that including：
Receive programming instruction；
Current program voltage is determined according to the Current Temperatures of memory chip；
Apply the current program voltage to the storage unit of the memory chip.
2. according to the method described in claim 1, it is characterized in that, the Current Temperatures according to memory chip determine currently
Before program voltage, further include：
The Current Temperatures of the memory chip are detected by temperature sensor.
3. method according to claim 1 or 2, which is characterized in that the Current Temperatures according to memory chip determine
Current program voltage, including：
If the Current Temperatures of the memory chip are higher than high temperature preset value, the increase programming electricity on the basis of giving tacit consent to program voltage
Pressure, is determined as the current program voltage by the program voltage after increase；
If the Current Temperatures of the memory chip are less than low temperature preset value, reduce programming electricity on the basis of giving tacit consent to program voltage
Pressure, is determined as the current program voltage by the program voltage after reduction.
4. according to the method described in claim 3, it is characterized in that, the Current Temperatures according to memory chip determine currently
Program voltage further includes：
If the Current Temperatures of the memory chip both not less than the low temperature preset value, also not higher than the high temperature preset value,
The acquiescence program voltage is then determined as the current program voltage.
5. according to the method described in claim 4, it is characterized in that, the storage unit to the memory chip applies institute
Current program voltage is stated, including：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
6. a kind of programmer of storage unit, which is characterized in that including：
Receiving module, for receiving programming instruction；
Determining module, for determining current program voltage according to the Current Temperatures of memory chip；
Apply module, for applying the current program voltage to the storage unit of the memory chip.
7. device according to claim 6, which is characterized in that further include：
Detection module, for before the Current Temperatures according to memory chip determine current program voltage, passing through temperature
Sensor detects the Current Temperatures of the memory chip.
8. the device according to claim 6 or 7, which is characterized in that the determining module, including：
Increasing unit, if being higher than high temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage as base
Quasi- increase program voltage；
First determination unit, for the program voltage after increasing to be determined as the current program voltage；
Reduction unit, if being less than low temperature preset value for the Current Temperatures of the memory chip, to give tacit consent to program voltage as base
Standard reduces program voltage；
Second determination unit, for the program voltage after reducing to be determined as the current program voltage.
9. device according to claim 8, which is characterized in that the determining module further includes：
3rd determination unit is not also high if being both not less than the low temperature preset value for the Current Temperatures of the memory chip
In the high temperature preset value, then the acquiescence program voltage is determined as the current program voltage.
10. device according to claim 9, which is characterized in that the application module is specifically used for：
Grid and drain electrode to the storage unit apply the corresponding current program voltage respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611051344.0A CN108109646A (en) | 2016-11-24 | 2016-11-24 | The programmed method and device of a kind of storage unit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611051344.0A CN108109646A (en) | 2016-11-24 | 2016-11-24 | The programmed method and device of a kind of storage unit |
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| CN110660442A (en) * | 2019-05-23 | 2020-01-07 | 深圳市芯天下技术有限公司 | High-temperature application method and system of NOR FLASH |
| CN111261216A (en) * | 2020-03-20 | 2020-06-09 | 长江存储科技有限责任公司 | Control method of three-dimensional memory, control device thereof and storage medium |
| CN111312317A (en) * | 2018-12-12 | 2020-06-19 | 北京兆易创新科技股份有限公司 | Nonvolatile memory control method and device |
| CN111462804A (en) * | 2020-03-27 | 2020-07-28 | 长江存储科技有限责任公司 | Programming method and programming device of memory |
| CN114121096A (en) * | 2020-08-27 | 2022-03-01 | 长鑫存储技术有限公司 | Memory adjusting method, memory adjusting system and semiconductor device |
| US11735233B2 (en) | 2020-08-27 | 2023-08-22 | Changxin Memory Technologies, Inc. | Method and system for regulating memory, and semiconductor device |
| US11928357B2 (en) | 2020-08-27 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
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| US11735233B2 (en) | 2020-08-27 | 2023-08-22 | Changxin Memory Technologies, Inc. | Method and system for regulating memory, and semiconductor device |
| US11886721B2 (en) | 2020-08-27 | 2024-01-30 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| US11928357B2 (en) | 2020-08-27 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and system for adjusting memory, and semiconductor device |
| CN114121096B (en) * | 2020-08-27 | 2024-03-26 | 长鑫存储技术有限公司 | Memory adjusting method, adjusting system and semiconductor device |
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