CN110659146A - Temperature-based flash memory re-reading method - Google Patents
Temperature-based flash memory re-reading method Download PDFInfo
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- CN110659146A CN110659146A CN201910717888.3A CN201910717888A CN110659146A CN 110659146 A CN110659146 A CN 110659146A CN 201910717888 A CN201910717888 A CN 201910717888A CN 110659146 A CN110659146 A CN 110659146A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0706—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
- G06F11/073—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a memory management context, e.g. virtual memory or cache management
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/0703—Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
- G06F11/0793—Remedial or corrective actions
Abstract
The invention provides a temperature-based flash memory rereading method, which comprises the following steps: A. establishing a constraint relation between a temperature value and a reading voltage value aiming at the flash memory unit; B. when the reading operation initiated to the flash memory unit fails, acquiring the temperature value of the current flash memory unit, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data; C. and applying the voltage value to restart the read operation to the flash memory unit.
Description
Technical Field
The invention relates to the field of data processing, in particular to a temperature-based flash memory rereading method.
Background
With the increasing demand of the intelligent terminal for storage capacity, the traditional 2D SLC NAND flash memory (SLC, a memory cell storing only one bit of information) has failed to meet the demand, and is gradually replaced by 3D TLC NAND flash memory (TLC, a memory cell storing three bits of information). However, the threshold voltage (Vth) distribution of the 3D TLC NAND flash memory is dense, and is affected by the ambient temperature, electrons stored in a floating gate (or called as a floating gate) are unstable, a read margin is narrowed, that is, a range of voltage capable of correctly reading data is reduced, if a large amount of data bit is inverted by using a default large-range re-reading mode, decoding time of a flash memory controller is too long, and data correctness is affected, and meanwhile, reading performance is greatly reduced.
In the prior art, a NAND flash manufacturer provides a reread voltage data set with a large range, the reread voltage data set does not consider the influence of temperature change on a reading edge, when the temperature changes, a bottom layer drive is difficult to quickly select a proper reading voltage value in the reread voltage data set with a small range, and data are correctly read, so that the reading efficiency is greatly reduced.
In a chinese patent invention with an authorization publication number of CN105139890B entitled "an information processing method and a solid state disk", an information processing method and a solid state disk are disclosed, which include: the hardware accelerator obtains at least one rereading parameter used for generating a rereading command packet from a main control unit of the electronic equipment; determining first pre-stored data matched with the at least one re-reading parameter in the pre-stored data based on the at least one re-reading parameter; and generating a re-reading command packet based on the first pre-stored data and the at least one re-reading parameter, so that the flash memory unit of the electronic equipment can perform read-write operation based on the re-reading command packet. Similarly, the rereading of the above patent document is performed without considering the influence of temperature, and therefore, there is also a problem that the reading efficiency of the flash memory is reduced due to the temperature change.
On the other hand, in an actual working environment, the temperature may change at any time, for example, a user transfers the flash memory from an indoor environment to an outdoor environment or vice versa, and if the temperature difference is large, the flash memory may have a large influence. Therefore, the re-read measurement of the flash memory must be optimized based on temperature, especially under high and low temperature conditions or extreme environments.
Disclosure of Invention
In order to solve the problem that the re-reading execution in the prior art does not consider the influence of the environmental temperature and has a great influence on the reading efficiency of the flash memory, the invention provides a temperature-based flash memory re-reading method.
Firstly, the invention provides a temperature-based flash memory rereading method, which comprises the following steps:
A. establishing a constraint relation between a temperature value and a reading voltage value aiming at the flash memory unit;
B. when the reading operation initiated to the flash memory unit fails, acquiring the temperature value of the current flash memory unit, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data;
C. and applying the voltage value to restart the read operation to the flash memory unit.
Further, in the method provided by the invention, the step a further includes the following substeps:
a1, acquiring a first read voltage data set of the flash memory unit at a first temperature;
a2, taking the first reading voltage data set as a reference data set, and acquiring a corresponding second reading voltage data set at a second temperature different from the first temperature; wherein the content of the first and second substances,
the first read voltage data set includes one or more voltage values and the second read voltage data set includes one or more voltage values.
Further, in the above method provided by the invention, the number of voltage values in the second read voltage data set is smaller than the number of voltage values in the first read voltage data set.
Further, in the above method provided by the invention, when the second temperature is lower than the first temperature, the read voltage value in the second read voltage data set is moved to a direction larger than the median data point in the first read voltage data set.
Further, in the above method provided by the invention, when the second temperature is higher than the first temperature, the read voltage value in the second read voltage data set is moved to a direction smaller than the median data point in the first read voltage data set.
Further, in the method provided by the present invention, the median data point is an average value point of all voltage data in the first read voltage data set or the second read voltage data set, or a median point of all voltage data.
Secondly, the present invention provides a flash memory, which includes a flash memory chip, a flash memory controller, and further includes: a temperature sensor and a rereading controller; wherein the content of the first and second substances,
the constraint relation between the temperature value and the reading voltage value is stored in the flash memory chip;
the temperature sensor is connected with the re-reading controller and used for acquiring the temperature value of the current flash memory chip and sending the acquired temperature value to the re-reading controller;
the re-reading controller is connected with the temperature sensor and the flash memory controller, and is used for comparing the acquired temperature value with a reference value, and when:
when the acquired temperature value is smaller than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction larger than the median data point in the voltage data set at the reference temperature;
and when the acquired temperature value is greater than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction smaller than the median data point in the voltage data set at the reference temperature.
Further, in the flash memory provided by the present invention, the number of read voltage values in the voltage data set corresponding to the obtained temperature value is smaller than the number of voltage values in the read voltage data set corresponding to the reference temperature.
The invention further provides a flash memory rereading device based on temperature, which comprises the following modules:
the temperature and voltage corresponding module is used for establishing a constraint relation between a temperature value and a read voltage value aiming at the flash memory unit;
the judging module is used for acquiring the temperature value of the current flash memory unit when the reading operation initiated to the flash memory unit fails, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data;
and the re-reading module is used for applying the voltage value and re-initiating the reading operation to the flash memory unit.
Finally, the invention proposes a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the above-mentioned method.
The beneficial results of the invention are: by using the flash memory rereading method based on the temperature and the corresponding flash memory, the reading efficiency of the flash memory can be improved under the high and low temperature environment, the decoding burden of an ECC decoding unit is reduced, and the garbage recovery pressure of an FTL (flash memory conversion layer) is reduced.
Drawings
FIG. 1A is a schematic diagram of a read edge of a flash memory at 27 ℃;
FIG. 1B is a schematic diagram of the read margin of a flash memory at 90 deg.C and-40 deg.C;
FIG. 2 is a flowchart illustrating a method for re-reading a flash memory based on temperature according to a first embodiment of the present invention;
FIG. 3 is a flowchart illustrating a method for re-reading a flash memory based on temperature according to a second embodiment of the present invention;
FIG. 4 is a diagram illustrating a third embodiment of a flash memory according to the present invention;
fig. 5 is a block diagram of a flash memory re-reading device according to a fourth embodiment of the present invention.
Detailed Description
The conception, the specific structure and the technical effects of the present invention will be clearly and completely described in conjunction with the embodiments and the accompanying drawings to fully understand the objects, the schemes and the effects of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The same reference numbers will be used throughout the drawings to refer to the same or like parts.
It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly fixed or connected to the other feature or indirectly fixed or connected to the other feature. Furthermore, the descriptions of upper, lower, left, right, etc. used in this application are only relative to the positional relationship of the various elements of the application with respect to one another in the drawings. As used in this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The exemplary embodiments described herein and depicted in the drawings should not be considered limiting. Various mechanical, compositional, structural, electrical, and operational changes, including equivalents, may be made without departing from the scope of this disclosure and the claims. In some instances, well-known structures and techniques have not been shown or described in detail to avoid obscuring the disclosure. The same reference numbers in two or more drawings identify the same or similar elements. Moreover, elements and their associated features, which are described in detail with reference to one embodiment, may be included in other embodiments, where they are not specifically shown or described, where practicable. For example, if an element is described in detail with reference to one embodiment and not described with reference to the second embodiment, it may also be claimed to be included in the second embodiment.
Furthermore, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any combination of one or more of the associated listed items.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element of the same type from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "at … …" depending on the context.
In an embodiment of the invention, the method steps may be performed in another order. The invention is not limited to the order in which the method steps are performed.
In the prior art, reading of flash memory data is performed by judging conduction current, specifically, when reading, because electrons exist in a floating gate, a reverse electric field exists, which can increase a starting voltage, and when reading, a voltage value larger than the starting voltage is applied to a gate electrode by the characteristic, a channel is conducted, and conduction current exists, and whether the voltage value is 0 can be analyzed by the conduction current, so that re-reading of data can be understood as that one of the gate electrodes is re-selected within a preset reading voltage range, and applied to the gate electrode, and then the conduction current is judged.
When data is read under high and low temperature environment, a large amount of bit overturn of the data may occur, which may cause the error correction code to fail, and the error bit cannot be corrected back, at this time, one solution is to use a re-reading (read retry) mode provided by the original factory, that is, to provide a series of ranges of read voltage values, and select a proper read voltage within the range to re-read until the data is correctly read, but because the range of the voltage values provided by the original factory is relatively wide, the mode is inefficient, and it takes much time to ensure the data to be correct. Specifically, in the present invention, the high and low temperature environments are environmental temperatures having a large deviation from the room temperature, for example, in one embodiment of the present invention, the room temperature is 27 ℃, the high temperature environment is defined as a temperature higher than 90 ℃, and the low temperature environment is defined as a temperature lower than-40 ℃, but it should be understood that this temperature range is merely exemplary and not limiting, and thus, when the range of the read voltage is largely changed from the read voltage range at the room temperature or the median value of the read voltage is shifted, the high and low temperature environments can be understood. In particular, in one embodiment of the present invention, the median may be a mean or median.
Referring to fig. 1A and 1B, the read margin of the flash memory is different at different temperatures, and in a high and low temperature environment, the read margin is narrower than that at room temperature and may be shifted. Therefore, under high and low temperature environments, the re-reading voltage value provided by the factory greatly affects the reading efficiency, because the voltage capable of correctly reading data not only becomes narrow in range, but also shifts, and thus, under high and low temperature environments, the re-reading voltage range provided by the factory is likely to be no longer applicable.
To solve this problem, referring to the flowchart of fig. 2 of a first embodiment of a method for temperature-based flash memory re-reading, in an embodiment of the present invention, the method for temperature-based flash memory re-reading includes the following steps:
A. establishing a constraint relation between a temperature value and a reading voltage value aiming at the flash memory unit;
B. when the reading operation initiated to the flash memory unit fails, acquiring the temperature value of the current flash memory unit, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data;
C. and applying the voltage value to restart the read operation to the flash memory unit.
Specifically, in step a, a constraint relationship between a temperature value and a read voltage value for a flash memory cell is established, specifically, a voltage range data set of a read voltage edge of the flash memory cell at a certain temperature value is established, the data set defines a read voltage range data set in which a flash memory can correctly read data at a certain temperature value, and for different types of flash memories, the constraint relationship may be different, that is, the read voltage range data set is different, in an embodiment of the present invention, the read voltage range data set may be obtained by experiments, simulations, and the like, a model of a temperature and a read voltage range may also be established, an extended read temperature data set at different temperatures is obtained by obtaining a read temperature data set at a reference temperature, and of course, such a model is also based on different types of flash memories, and is physically associated with the semiconductor.
When the read operation of the data of a certain flash memory unit fails, in step B, the constraint relationship obtained in step a is used to perform an attempt of re-reading, where the attempt may be successful once or successful after multiple attempts, when the re-reading is unsuccessful, another data is selected from the constraint relationship to perform the re-reading attempt, and when the reading is successful, the step is ended.
Further, referring to the flowchart of fig. 3 of a second embodiment of the method for re-reading a flash memory based on temperature according to the present invention, in an embodiment of the present invention, the step a further includes the following sub-steps: a1, acquiring a first read voltage data set of the flash memory unit at a first temperature; a2, taking the first reading voltage data set as a reference data set, and acquiring a corresponding second reading voltage data set at a second temperature different from the first temperature; wherein the first read voltage data set comprises one or more voltage values and the second read voltage data set comprises one or more voltage values. In particular, in one embodiment of the present invention, the first temperature is a reference temperature, such as room temperature, and such as 27 ℃ in fig. 1, it should be understood that the first temperature is not limited to a particular temperature, for example, reference read voltage data may be obtained at multiple temperatures, which may be more accurate, such as selecting one temperature at an above-zero temperature and obtaining a corresponding read voltage data set, and selecting another temperature at a below-zero temperature and obtaining a corresponding read voltage data set, because the physical characteristics of the semiconductor may be significantly different at above-zero and below-zero, and in one embodiment of the present invention, the second temperature may be the actual operating temperature of the flash memory cell, which may be multiple temperatures, and may be continuous or discontinuous, depending on the required accuracy, if the accuracy requirement is very high, the continuous temperature may be better, and if too high precision is not required, the discontinuous temperature may be more efficient, and the temperature may be the same as or different from the reference temperature, e.g., with reference to fig. 1A and 1B, the first temperature is 27 ℃ and the second temperature may be 90 ℃ or-40 ℃.
Further, in one embodiment of the invention, the number of voltage values in the second read voltage data set is less than the number of voltage values in the first read voltage data set. For example, when comparing the read margins in fig. 1A and fig. 1B, it can be seen that, when the ambient temperature is at a high temperature or a low temperature, the read margins are narrowed, that is, the number of voltage values in the second read voltage data set is smaller than the number of voltage values in the first read voltage data set.
Specifically, in an embodiment of the present invention, when the second temperature is higher than the first temperature, the read voltage value in the second read voltage data set is shifted to a direction smaller than the median data point in the first read voltage data set, and referring to the cases in fig. 1A and 1B, when the second temperature is higher than the first temperature, that is, when T is 90 ℃ in the figure, the median point of the read voltage is shifted to the left compared to T is 27 ℃, that is, the read voltage value in the second read voltage data set needs to be shifted to a direction smaller than the median data point in the first read voltage data set, so as to obtain a correct read voltage.
Specifically, in another embodiment of the present invention, when the second temperature is lower than the first temperature, the read voltage value in the second read voltage data set is shifted to a direction larger than the median data point in the first read voltage data set, and referring to the cases in fig. 1A and 1B, when the second temperature is higher than the first temperature, that is, when T is-40 ℃ in the figure, the median point of the read voltage is shifted to the right compared to T is 27 ℃, that is, the read voltage value in the second read voltage data set needs to be shifted to a direction larger than the median data point in the first read voltage data set, so as to obtain the correct read voltage.
Specifically, in an embodiment of the present invention, the median data point is an average value point of all voltage data in the first read voltage data set or the second read voltage data set, or a median point of all voltage data.
Further, without violating the spirit of the present invention, the read voltage value of the first read voltage and the read voltage value of the second read voltage are determined according to the range of the read edge of the flash memory under different temperature environments.
Further, referring to fig. 4, a schematic diagram of a third embodiment of a flash memory according to the present invention is shown, in an embodiment of the present invention, the flash memory according to the present invention includes a flash memory chip and a flash memory controller, and further includes: a temperature sensor and a rereading controller; the flash memory chip stores a constraint relation between a temperature value and a reading voltage value; the temperature sensor is connected with the re-reading controller and used for acquiring the temperature value of the current flash memory chip and sending the acquired temperature value to the re-reading controller; the re-reading controller is connected with the temperature sensor and the flash memory controller, and is used for comparing the acquired temperature value with a reference value, and when: when the acquired temperature value is smaller than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction larger than the median data point in the voltage data set at the reference temperature; and when the acquired temperature value is greater than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction smaller than the median data point in the voltage data set at the reference temperature. Specifically, the temperature sensor T-sensor is integrated in the flash memory to realize the optimization of the re-reading strategy. The processor reads the ambient temperature through the T-sensor, judges whether the flash memory is in a high-temperature and low-temperature environment, sends a command to the flash memory through the flash memory controller according to the ambient temperature value, and adjusts the read voltage; and after the corresponding reading voltage is successfully set, sending the reading operation.
Further, in an embodiment of the present invention, in the proposed flash memory, the number of read voltage values in the voltage data set corresponding to the obtained temperature value is smaller than the number of voltage values in the read voltage data set corresponding to the reference temperature, and specifically, just because the range of the read voltage values is narrowed under the high and low temperature environments, the read voltage needs to be optimized according to the temperature, so as to improve the reading efficiency.
Further, in an embodiment of the present invention, the present invention provides a temperature-based flash memory re-reading apparatus, including the following modules: the temperature and voltage corresponding module is used for establishing a constraint relation between a temperature value and a read voltage value aiming at the flash memory unit; the judging module is used for acquiring the temperature value of the current flash memory unit when the reading operation initiated to the flash memory unit fails, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data; and the re-reading module is used for applying the voltage value and re-initiating the reading operation to the flash memory unit.
Specifically, in the temperature-voltage correspondence module, a constraint relationship between a temperature value and a read voltage value for the flash memory cell is established, specifically, a voltage range data set of a read voltage edge of the flash memory cell at a certain temperature value is established, the data set defines a read voltage range data set in which a certain flash memory can correctly read data at a certain temperature value, and for different types of flash memories, the constraint relationship may be different, that is, the read voltage range data set is different, in an embodiment of the present invention, the read voltage range data set may be obtained by means of experiments, simulations, etc., a model of a temperature and a read voltage range may also be established, a read temperature data set at a reference temperature is obtained, an extended read temperature data set at different temperatures is obtained, of course, such a model is also based on different flash memory types, and is physically associated with the semiconductor.
When the read operation of the data of a certain flash memory unit fails, the re-read attempt can be performed in the judgment module by using the constraint relation acquired in the temperature voltage corresponding module, the re-read attempt can be successful once or can be successful after multiple attempts, when the re-read is unsuccessful, other data is selected from the constraint relation for re-read attempt, and after the read is successful, the execution of all modules is ended.
Further, in an embodiment of the present invention, the temperature-voltage correspondence module further includes the following sub-modules: a reference module for obtaining a first read voltage data set of the flash memory cell at a first temperature; and the expansion module is used for taking the first reading voltage data set as a reference data set and acquiring a second reading voltage data set corresponding to the first temperature and a second temperature different from the first temperature.
Finally, the invention proposes a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the above-mentioned method.
In summary, by using the flash memory rereading method based on temperature and the corresponding flash memory provided by the invention, the rereading strategy of the flash memory can be optimized under high and low temperature environments and even extreme environmental conditions, the reading efficiency of the flash memory is improved, the decoding burden of an ECC decoding unit is reduced, and the garbage recycling pressure of an FTL (flash memory translation layer) is reduced.
It should be recognized that embodiments of the present invention can be realized and implemented by computer hardware, a combination of hardware and software, or by computer instructions stored in a non-transitory computer readable memory. The methods may be implemented in a computer program using standard programming techniques, including a non-transitory computer-readable storage medium configured with the computer program, where the storage medium so configured causes a computer to operate in a specific and predefined manner, according to the methods and figures described in the detailed description. Each program may be implemented in a high level procedural or object oriented programming language to communicate with a computer system. However, the program(s) can be implemented in assembly or machine language, if desired. In any case, the language may be a compiled or interpreted language. Furthermore, the program can be run on a programmed application specific integrated circuit for this purpose.
Further, the method may be implemented in any type of computing platform operatively connected to a suitable interface, including but not limited to a personal computer, mini computer, mainframe, workstation, networked or distributed computing environment, separate or integrated computer platform, or in communication with a charged particle tool or other imaging device, and the like. Aspects of the invention may be embodied in machine-readable code stored on a non-transitory storage medium or device, whether removable or integrated into a computing platform, such as a hard disk, optically read and/or write storage medium, RAM, ROM, or the like, such that it may be read by a programmable computer, which when read by the storage medium or device, is operative to configure and operate the computer to perform the procedures described herein. Further, the machine-readable code, or portions thereof, may be transmitted over a wired or wireless network. The invention described herein includes these and other different types of non-transitory computer-readable storage media when such media include instructions or programs that implement the steps described above in conjunction with a microprocessor or other data processor. The invention also includes the computer itself when programmed according to the methods and techniques described herein.
Embodiments of this disclosure are described herein, including the best mode known to the inventors for carrying out the invention. Variations of those described embodiments may become apparent to those of ordinary skill in the art upon reading the foregoing description. The inventors expect skilled artisans to employ such variations as appropriate, and the inventors intend for the embodiments of the disclosure to be practiced otherwise than as specifically described herein. Accordingly, the scope of the present disclosure includes all modifications and equivalents of the subject matter recited in the claims appended hereto as permitted by applicable law. Moreover, the scope of the present disclosure encompasses any combination of the above-described elements in all possible variations thereof unless otherwise indicated herein or otherwise clearly contradicted by context.
While the present invention has been described in considerable detail and with particular reference to a few illustrative embodiments thereof, it is not intended to be limited to any such details or embodiments or any particular embodiments, but it is to be construed as effectively covering the intended scope of the invention by providing a broad, potential interpretation of such claims in view of the prior art with reference to the appended claims. Furthermore, the foregoing describes the invention in terms of embodiments foreseen by the inventor for which an enabling description was available, notwithstanding that insubstantial modifications of the invention, not presently foreseen, may nonetheless represent equivalent modifications thereto.
The specification and drawings are, accordingly, to be regarded in an illustrative sense rather than a restrictive sense. However, it will be apparent that: various modifications and changes may be made thereto without departing from the broader spirit and scope of the application as set forth in the claims.
Other variations are within the spirit of the present application. Accordingly, while the disclosed technology is susceptible to various modifications and alternative constructions, certain embodiments thereof have been shown in the drawings and have been described above in detail. It should be understood, however, that there is no intention to limit the application to the specific form or forms disclosed; on the contrary, the intention is to cover all modifications, alternative constructions, and equivalents falling within the spirit and scope of the application, as defined in the appended claims.
Claims (10)
1. A temperature-based flash memory re-reading method is characterized by comprising the following steps:
A. establishing a constraint relation between a temperature value and a reading voltage value aiming at the flash memory unit;
B. when the reading operation initiated to the flash memory unit fails, acquiring the temperature value of the current flash memory unit, searching a reading voltage value data set corresponding to the temperature and selecting at least one voltage data;
C. and applying the voltage value to restart the read operation to the flash memory unit.
2. The method according to claim 1, wherein said step a further comprises the sub-steps of:
a1, acquiring a first read voltage data set of the flash memory unit at a first temperature;
a2, taking the first reading voltage data set as a reference data set, and acquiring a corresponding second reading voltage data set at a second temperature different from the first temperature; wherein the content of the first and second substances,
the first read voltage data set includes one or more voltage values and the second read voltage data set includes one or more voltage values.
3. The method of claim 2, wherein the number of voltage values in the second read voltage data set is less than the number of voltage values in the first read voltage data set.
4. The method of claim 2, wherein when the second temperature is less than the first temperature, moving the read voltage values in the second read voltage data set in a direction greater than the median data point in the first read voltage data set.
5. The method of claim 2, wherein when the second temperature is greater than the first temperature, moving the read voltage values in the second read voltage data set to a direction less than the median data point in the first read voltage data set.
6. The method of claim 4 or 5, wherein the median data point is an average value point of all voltage data in the first read voltage data set or the second read voltage data set, or a median point of all voltage data.
7. A flash memory comprises a flash memory chip and a flash memory controller, and is characterized by further comprising: a temperature sensor and a rereading controller; wherein the content of the first and second substances,
the constraint relation between the temperature value and the reading voltage value is stored in the flash memory chip;
the temperature sensor is connected with the re-reading controller and used for acquiring the temperature value of the current flash memory chip and sending the acquired temperature value to the re-reading controller;
the re-reading controller is connected with the temperature sensor and the flash memory controller, and is used for comparing the acquired temperature value with a reference value, and when:
when the acquired temperature value is smaller than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction larger than the median data point in the voltage data set at the reference temperature;
and when the acquired temperature value is greater than the reference temperature, moving the read voltage value in the read voltage data set corresponding to the acquired temperature value to a direction smaller than the median data point in the voltage data set at the reference temperature.
8. The flash memory of claim 7, wherein the number of read voltage values in the voltage data set corresponding to the obtained temperature value is less than the number of voltage values in the read voltage data set corresponding to the reference temperature.
9. A temperature-based flash memory re-reading device is characterized by comprising the following modules:
the temperature and voltage corresponding module is used for establishing a constraint relation between a temperature value and a read voltage value aiming at the flash memory unit;
the judging module is used for acquiring the temperature value of the current flash memory unit and finding out the reading voltage value corresponding to the temperature when the reading operation initiated to the flash memory unit fails;
and the re-reading module is used for applying the voltage value and re-initiating the reading operation to the flash memory unit.
10. A computer-readable storage medium, on which a computer program is stored, characterized in that the computer program realizes the steps of the method according to any one of claims 1-6 when executed by a processor.
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| CN201910717888.3A CN110659146A (en) | 2019-08-05 | 2019-08-05 | Temperature-based flash memory re-reading method |
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| CN111400099A (en) * | 2020-03-16 | 2020-07-10 | 深圳佰维存储科技股份有限公司 | Data re-reading method, device and equipment of flash memory and computer readable storage medium |
| CN112447241A (en) * | 2020-11-25 | 2021-03-05 | 合肥大唐存储科技有限公司 | Method and device for realizing data rereading, computer storage medium and terminal |
| CN112631515A (en) * | 2020-12-17 | 2021-04-09 | 珠海妙存科技有限公司 | Self-adaptive flash memory data re-reading method, device and medium |
| CN113470723A (en) * | 2021-06-29 | 2021-10-01 | 成都佰维存储科技有限公司 | Read retry test method and device, readable storage medium and electronic equipment |
| CN114296645A (en) * | 2021-12-17 | 2022-04-08 | 合肥大唐存储科技有限公司 | Rereading method in Nand flash memory and solid state disk |
| CN114356218A (en) * | 2021-12-07 | 2022-04-15 | 广州致存科技有限责任公司 | Data error correction method, device and medium for Flash memory |
| CN114442963A (en) * | 2022-04-07 | 2022-05-06 | 中国信息通信研究院 | Control method and device for solid state disk |
| CN115454710A (en) * | 2022-11-10 | 2022-12-09 | 珠海妙存科技有限公司 | Flash memory data reading method and device, electronic equipment and storage medium |
| CN116994632A (en) * | 2023-06-30 | 2023-11-03 | 珠海妙存科技有限公司 | Flash memory particle grading method, system, controller and medium based on reading time |
| CN116994632B (en) * | 2023-06-30 | 2024-04-19 | 珠海妙存科技有限公司 | Flash memory particle grading method, system, controller and medium based on reading time |
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| CN112447241A (en) * | 2020-11-25 | 2021-03-05 | 合肥大唐存储科技有限公司 | Method and device for realizing data rereading, computer storage medium and terminal |
| CN112631515A (en) * | 2020-12-17 | 2021-04-09 | 珠海妙存科技有限公司 | Self-adaptive flash memory data re-reading method, device and medium |
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| CN113470723B (en) * | 2021-06-29 | 2023-07-14 | 成都佰维存储科技有限公司 | Method and device for testing read retry, readable storage medium and electronic equipment |
| CN113470723A (en) * | 2021-06-29 | 2021-10-01 | 成都佰维存储科技有限公司 | Read retry test method and device, readable storage medium and electronic equipment |
| CN114356218A (en) * | 2021-12-07 | 2022-04-15 | 广州致存科技有限责任公司 | Data error correction method, device and medium for Flash memory |
| CN114356218B (en) * | 2021-12-07 | 2024-01-16 | 广州致存科技有限责任公司 | Data error correction method, device and medium of Flash memory |
| CN114296645A (en) * | 2021-12-17 | 2022-04-08 | 合肥大唐存储科技有限公司 | Rereading method in Nand flash memory and solid state disk |
| CN114296645B (en) * | 2021-12-17 | 2024-01-02 | 合肥大唐存储科技有限公司 | Rereading method in Nand flash memory and solid state disk |
| CN114442963B (en) * | 2022-04-07 | 2022-06-07 | 中国信息通信研究院 | Control method and device for solid state disk |
| CN114442963A (en) * | 2022-04-07 | 2022-05-06 | 中国信息通信研究院 | Control method and device for solid state disk |
| CN115454710B (en) * | 2022-11-10 | 2023-03-24 | 珠海妙存科技有限公司 | Flash memory data reading method and device, electronic equipment and storage medium |
| CN115454710A (en) * | 2022-11-10 | 2022-12-09 | 珠海妙存科技有限公司 | Flash memory data reading method and device, electronic equipment and storage medium |
| CN116994632A (en) * | 2023-06-30 | 2023-11-03 | 珠海妙存科技有限公司 | Flash memory particle grading method, system, controller and medium based on reading time |
| CN116994632B (en) * | 2023-06-30 | 2024-04-19 | 珠海妙存科技有限公司 | Flash memory particle grading method, system, controller and medium based on reading time |
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