CN108103430A - A kind of control method of arc procedure aluminium meltallizing layer surface tip burr - Google Patents
A kind of control method of arc procedure aluminium meltallizing layer surface tip burr Download PDFInfo
- Publication number
- CN108103430A CN108103430A CN201711193063.3A CN201711193063A CN108103430A CN 108103430 A CN108103430 A CN 108103430A CN 201711193063 A CN201711193063 A CN 201711193063A CN 108103430 A CN108103430 A CN 108103430A
- Authority
- CN
- China
- Prior art keywords
- arc
- meltallizing
- control method
- meltallizing layer
- layer surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/131—Wire arc spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
Abstract
The present invention provides a kind of control method of arc procedure aluminium meltallizing layer surface tip burr, and scouring pad grinding disc is installed on pneumatic grinding apparatus, is polished meltallizing layer region, and control polishing pressure is in 3~5Kg/CM2, uniform grinding parts surface；The tip crystal grain of parts surface can be effectively removed, ARC meltallizing roughness is minimum can reach 16.781 μm for regulation and control.
Description
Technical field
The present invention relates to electronic industry fields, and in particular to a kind of control of arc procedure aluminium meltallizing layer surface tip burr
Method.
Background technology
Meltallizing is a kind of thermal spraying on surface treatment technology, the base material after the series of preprocessing such as sandblasting, cleaning were carried out
Surface, the molten mechanical bonding force penetrated coating droplet, cooled down using coating, sprawled melted by jet-impingement, in base material table
Face covers one layer of relatively uniform, coarse coating.
Semiconductor Physics vapor deposition (sputter) processing procedure can the certain thickness metal of component adsorption, oxide,
The sputters substance such as organic matter, in order to increase adsorption capacity of the component to these attachments, the film quality for reducing the processing procedure later stage is removed
(peeling), particle (particle) exceptions etc. are bad, can be used in the clean regenerative process of component to molten and penetrate processing.ARC melts
I.e. electric arc spraying is penetrated, principle is to be contacted with each other respectively with positive and negative charge using two aluminium wires and generate electric arc, high arc temperature will
Wire rod instant melting is ejected into matrix surface after compressed air atomizing.There is ARC using more universal aluminium meltallizing technique at present
Meltallizing and flame meltallizings (flame meltallizing) two ways, it is good with reference to power that ARC meltallizings have, robotic arm manipulation operation, electric current, electricity
The advantages of Parameter adjustables adjusting range such as pressure, air pressure is wide, but because of technological principle reason, there are more tips for meltallizing layer surface
Grain (crystal grain).Tip grain is in protective cover, and because contact area is smaller, membrane layer molecules are assembled easily at tip, seriously
Particle (particle) during Shi Zaocheng equipment uses is exceeded or tip arcing (electric discharge) abnormal phenomenon, is influencing component just
Normal service life.
The content of the invention
In view of the problems of the existing technology, the present invention provides a kind of control of arc procedure aluminium meltallizing layer surface tip burr
Method processed can effectively remove the tip grain of parts surface, and regulation and control ARC meltallizings roughness is in certain production scope of application
(16.781 μm~19.241 μm).
The technical scheme is that：A kind of control method of arc procedure aluminium meltallizing layer surface tip burr is specific to walk
It is rapid as follows：
Step 1: body sandblasting；
Step 2: cleaning；
Step 3: ARC meltallizings；
Step 4: grinding process：Scouring pad grinding disc on pneumatic grinding apparatus is installed, meltallizing layer region is beaten
Mill, control polishing pressure is in 3~5Kg/CM2, uniform grinding parts surface；
Step 5: clean cleaning.
Further, scouring pad grinding disc described in step 4 is 7447# scouring pad grinding disc.
Further, body sandblasting described in step 1：Sandblasting is carried out to metal-like block using white fused alumina sand material, after making sandblasting
Component surface roughness it is uniform, roughness Ra value scope be 6~13 μm.
Further, cleaning described in step 2：Deionized water rinsing and ultrasound are carried out to the component after sandblasting in step 1
Ripple cleans, and the remaining sand material dust in removing component surface layer and body granules influence, and are then purged and are put using nitrogen/CDA
Enter oven drying processing, drying temperature is 150 DEG C, time 2h.
Further, the ultrasonic intensity is 10inch/cm2, time 15min.
Further, ARC meltallizings described in step 3：Using ARC meltallizings in one layer of aluminium meltallizing layer of sample block surface meltallizing, meltallizing
Layer thickness is 180~200 μm.
Further, clean cleaning described in step 5：50bar high-pressure washings are carried out to the sample block after step 4 grinding process
And ultrasonic cleaning, the meltallizing ash and particle particles of the adherency of removing component surface layer, and carry out drying process.
The beneficial effects of the invention are as follows：When not using the method for the invention in the prior art, ARC meltallizing roughness is minimum
21.479 μm are cannot be below, and using the method for the invention, the tip grain of parts surface can be effectively removed, regulates and controls ARC
Meltallizing roughness is minimum can to reach 16.781 μm.
Description of the drawings
Fig. 1 is the ARC meltallizings layer surface structure under 200 times of light microscopes of sample one；
Fig. 2 for sample one under 200 times of light microscopes polishing processing after meltallizing layer surface state.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
ARC meltallizings layer polishing (polishing) treatment process that the present invention mentions, is coordinated using pneumatic grinding apparatus
The removal of meltallizing layer tip crystal grain (grain) and the optimization of roughness, which can be completed, in 7447# scouring pads improves.Specific implementation process
It is as follows：
1. body sandblasting：Using 24# white fused aluminas (WA) sand material to metal (aluminium alloy, stainless steel, the titanium alloy of appropriate size
Deng) sample block (including sample one, sample two and sample three) progress sandblasting, blasting pressure and operation technique are adjusted, after making sandblasting
Component surface roughness is uniform, and roughness Ra value scope is 6~13 μm；
2. cleaning：Component after sandblasting is carried out, deionized water rinsing and ultrasonic cleaning (10inch/cm2, 15min),
The remaining sand material dust in removing component surface layer and body particle (particle) influence, then using nitrogen/CDA (dry air)
It is purged and is put into oven drying processing, drying temperature is 150 DEG C, time 2h；
3.ARC meltallizings：Using ARC meltallizings in one layer of aluminium meltallizing layer of sample block surface meltallizing, adjustment meltallizing parameter makes meltallizing layer
Thickness is 180~200 μm；
4.Polishing (polishing) processing：7447# scouring pad grinding disc is installed on pneumatic grinding apparatus, to meltallizing layer
Region is polished, and grinding angle is adjusted during polishing and controls polishing pressure in 3~5Kg/CM2, uniform grinding parts surface；
5. cleaning cleaning：50bar high-pressure washings are carried out to polishing (polishing) treated sample blocks and ultrasonic wave is clear
It washes, in order to the meltallizing ash and particle particles of removing component surface layer adherency, and carry out drying process；
Use optical microphotograph sem observation parts surface pattern, roughness measuring instrument test component surface roughness.Sample one
As described in Figure 1, sample one is under 200 times of light microscopes for ARC meltallizings layer surface structure under 200 times of light microscopes
Meltallizing layer surface state is as shown in Figure 2 after polishing processing.
Sample one, sample two and sample three polishing before and after the processing meltallizing layer surface roughness (Ra values) to such as
Shown in table one, unit is μm.
Table one
| ARC meltallizings | Polishing processing is once | Polishing processing is secondary | |
| Sample one | 21.479 | 18.092 | 16.781 |
| Sample two | 25.326 | 21.847 | 18.562 |
| Sample three | 30.213 | 22.845 | 19.241 |
In conclusion in polishing before processings, ARC meltallizing roughness is minimum to cannot be below 21.479 μm, and
After polishing processing, the tip grain of parts surface can be effectively removed, ARC meltallizing roughness is minimum to reach for regulation and control
16.781μm。
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr, it is characterised in that：It is as follows：
Step 1: body sandblasting；
Step 2: cleaning；
Step 3: ARC meltallizings；
Step 4: grinding process：Scouring pad grinding disc on pneumatic grinding apparatus is installed, is polished meltallizing layer region, is controlled
System polishing pressure is in 3~5Kg/CM2, uniform grinding parts surface；
Step 5: clean cleaning.
2. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 1, feature exist
In：Scouring pad grinding disc described in step 4 is 7447# scouring pad grinding disc.
3. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 1, feature exist
In：Body sandblasting described in step 1：Sandblasting is carried out to metal-like block using white fused alumina sand material, makes the parts surface after sandblasting coarse
Degree is uniform, and roughness Ra value scope is 6~13 μm.
4. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 1, feature exist
In：Cleaning described in step 2：Deionized water rinsing and ultrasonic cleaning, removing component are carried out to the component after sandblasting in step 1
The remaining sand material dust in surface layer and body granules influence, and are then purged using nitrogen/CDA and are put into oven drying processing,
Drying temperature is 150 DEG C, time 2h.
5. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 4, feature exist
In：The ultrasonic intensity is 10inch/cm2, time 15min.
6. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 1, feature exist
In：ARC meltallizings described in step 3：Using ARC meltallizings in one layer of aluminium meltallizing layer of sample block surface meltallizing, meltallizing layer thickness for 180~
200μm。
7. a kind of control method of arc procedure aluminium meltallizing layer surface tip burr according to claim 1, feature exist
In：Clean cleaning described in step 5：50bar high-pressure washings and ultrasonic cleaning are carried out to the sample block after step 4 grinding process,
The meltallizing ash and particle particles of removing component surface layer adherency, and carry out drying process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711193063.3A CN108103430B (en) | 2017-11-24 | 2017-11-24 | Control method for sharp burrs on surface of aluminum meltallizing layer in arc process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711193063.3A CN108103430B (en) | 2017-11-24 | 2017-11-24 | Control method for sharp burrs on surface of aluminum meltallizing layer in arc process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108103430A true CN108103430A (en) | 2018-06-01 |
| CN108103430B CN108103430B (en) | 2020-02-14 |
Family
ID=62206973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711193063.3A Active CN108103430B (en) | 2017-11-24 | 2017-11-24 | Control method for sharp burrs on surface of aluminum meltallizing layer in arc process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108103430B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109182945A (en) * | 2018-09-20 | 2019-01-11 | 芜湖通潮精密机械股份有限公司 | It is a kind of that for improving, semiconductor chambers aluminium is molten to be penetrated the molten of layer service life and penetrates technique |
| CN110777397A (en) * | 2019-12-11 | 2020-02-11 | 洛阳轻冶科技有限公司 | Uninterrupted repair process for electrified aluminum bus of electrolytic cell in high-intensity magnetic field |
| CN114196900A (en) * | 2021-12-17 | 2022-03-18 | 富乐德科技发展（天津）有限公司 | Surface treatment method for stainless steel component in semiconductor chip manufacturing industry |
| CN114774918A (en) * | 2022-04-25 | 2022-07-22 | 苏州众芯联电子材料有限公司 | Manufacturing process of semiconductor dry etching equipment component |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309979A (en) * | 1988-06-08 | 1989-12-14 | Nippon Alum Mfg Co Ltd | Aluminum base material with thermally sprayed coating film and production thereof |
| CN104018108A (en) * | 2014-06-26 | 2014-09-03 | 常州大学 | Steel surface modification treatment method for ocean platform |
| CN106756714A (en) * | 2016-11-30 | 2017-05-31 | 佛山市高明区诚睿基科技有限公司 | A kind of preparation method of the stainless steel material with surface insulation layer |
| CN107338463A (en) * | 2017-07-11 | 2017-11-10 | 深圳仕上电子科技有限公司 | The Hard anode oxidation method of panel class Product processing part of appliance |
-
2017
- 2017-11-24 CN CN201711193063.3A patent/CN108103430B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309979A (en) * | 1988-06-08 | 1989-12-14 | Nippon Alum Mfg Co Ltd | Aluminum base material with thermally sprayed coating film and production thereof |
| CN104018108A (en) * | 2014-06-26 | 2014-09-03 | 常州大学 | Steel surface modification treatment method for ocean platform |
| CN106756714A (en) * | 2016-11-30 | 2017-05-31 | 佛山市高明区诚睿基科技有限公司 | A kind of preparation method of the stainless steel material with surface insulation layer |
| CN107338463A (en) * | 2017-07-11 | 2017-11-10 | 深圳仕上电子科技有限公司 | The Hard anode oxidation method of panel class Product processing part of appliance |
Non-Patent Citations (1)
| Title |
|---|
| 王真 等: "铝合金电弧喷涂纯铝涂层的耐蚀性能", 《材料保护》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109182945A (en) * | 2018-09-20 | 2019-01-11 | 芜湖通潮精密机械股份有限公司 | It is a kind of that for improving, semiconductor chambers aluminium is molten to be penetrated the molten of layer service life and penetrates technique |
| CN110777397A (en) * | 2019-12-11 | 2020-02-11 | 洛阳轻冶科技有限公司 | Uninterrupted repair process for electrified aluminum bus of electrolytic cell in high-intensity magnetic field |
| CN114196900A (en) * | 2021-12-17 | 2022-03-18 | 富乐德科技发展（天津）有限公司 | Surface treatment method for stainless steel component in semiconductor chip manufacturing industry |
| CN114196900B (en) * | 2021-12-17 | 2023-08-08 | 富乐德科技发展（天津）有限公司 | Surface treatment method for stainless steel component in semiconductor chip manufacturing industry |
| CN114774918A (en) * | 2022-04-25 | 2022-07-22 | 苏州众芯联电子材料有限公司 | Manufacturing process of semiconductor dry etching equipment component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108103430B (en) | 2020-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108103430A (en) | A kind of control method of arc procedure aluminium meltallizing layer surface tip burr | |
| US8292698B1 (en) | On-line chamber cleaning using dry ice blasting | |
| JP4739368B2 (en) | Sputtering target with less generation of particles, backing plate, apparatus in sputtering apparatus, and roughening method | |
| JP6639584B2 (en) | Method for manufacturing parts for plasma processing apparatus | |
| TWI438304B (en) | A ceramic spray member and a method for manufacturing the same, and a polishing medium for a ceramic spray member | |
| JP5293211B2 (en) | Electrostatic chuck and method of manufacturing electrostatic chuck | |
| TWI780090B (en) | New repair method for electrostatic chuck | |
| CN110423918A (en) | A kind of method that electron beam-induced refining casting technique prepares high-purity nickel base superalloy | |
| CN111659640A (en) | Ultra-clean cleaning process for aluminum substrate porous gas distribution device in cavity of semiconductor equipment | |
| US20040081746A1 (en) | Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment | |
| US20050084654A1 (en) | Component for vacuum apparatus, production method thereof and apparatus using the same | |
| CN103526260A (en) | Titanium alloy bone surgery apparatus surface treatment technology | |
| CN112521183A (en) | Meltallizing method of ceramic piece for dry etching process | |
| KR100945315B1 (en) | Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment | |
| JP2010258280A (en) | Electrostatic chuck, and method of manufacturing the same | |
| CN110129716A (en) | A kind of preparation method of high entropy alloy coating | |
| CN112159947A (en) | Electric arc spraying method | |
| WO2010027073A1 (en) | Semiconductor fabrication device component and semiconductor fabrication device | |
| TWI525695B (en) | A method for regenerating a silicon member for a plasma etching apparatus, a silicon member for a plasma etching apparatus, a silicon focusing ring, and a silicon electrode plate | |
| JP2007332462A (en) | Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment | |
| CN113122795A (en) | Preparation method of yttrium oxide coating of quartz for semiconductor | |
| US20090311145A1 (en) | Reaction chamber structural parts with thermal spray ceramic coating and method for forming the ceramic coating thereof | |
| JPH11340143A (en) | Manufacture of semiconductor device | |
| KR101838821B1 (en) | Heat treatment method of nickel base precipitation superalloy using replica | |
| CN110512253B (en) | Surface treatment process used before heating base anodic oxidation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |