JPH11340143A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the occurrence of produced foreign matters stably controllable over a long period by forming irregularities having specific heights on the surface of a deposition preventing jig, and protrusions having specific heights on the surfaces of the irregularities. SOLUTION: Large irregularities 20 having the maximum height of 30-500 μm are formed on the surface of a film 11 coating the surface of an adhesion preventing jig 4. In addition, small protrusions 21 having heights of 1-30 μm are formed on the surfaces of the irregularities 20. When plasma 12 is generated by film formation, a film 13 deposits on the surface of the jig 4 and covers the small protrusions 21 formed on the surfaces of the irregularities 20. In this film forming method, a stress dispersing effect can be expected even when only a thin film of <=30 μm in thickness deposits on the surface of the jig 4, because the small protrusions having heights of 1-30 μm are formed on the surfaces of the large irregularities 20. Therefore, such film formation that the occurrence of foreign matters is suppressed to an extremely small number over a long period immediately after the jig 4 is exchanged with another one can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device for preventing dust generation during film formation on a semiconductor substrate.

[0002]

2. Description of the Related Art At present, the trend of high integration of semiconductor devices is progressing, and fine processing with a minimum processing size of 0.2 to 0.35 micron has become possible. The most important issue in producing such a semiconductor device is how to reduce particles (hereinafter, foreign matters) attached to a wafer during a production process. When foreign matter adheres to the wafer, it is likely to cause film formation failure at the adhered portion or cause cracks in the film due to the foreign matter as a starting point. It is estimated that such defects caused by foreign matter account for 50% or more of device defects.

[0003] Foreign matter is generated when a film adhered to a place other than a wafer in a device for performing film formation or etching is broken or peeled off. This is because, since the deposited film has a residual stress, the greater the thickness of the film, the greater the shear force generated at the interface between the film and the adhered portion, and when the film reaches a certain film thickness, the film self-collapses.

[0004] This phenomenon in which an unnecessary film adheres to the inner wall of a wafer processing chamber such as a film forming chamber, the film thickness increases and peels off, and finally foreign matters are generated, is caused by a sputtering apparatus, a chemical vapor deposition (CVD) method. This is a phenomenon that occurs commonly in semiconductor device manufacturing apparatuses that perform film formation such as an apparatus, and foreign matter prevention is the most important issue in manufacturing semiconductor devices. Also,
This is also a problem to be solved for products manufactured by depositing a plurality of films, such as magnetic disks, optical disks, thin-film magnetic heads, and liquid crystal panels.

Usually, in order to avoid the generation of foreign matter during the process, a so-called anti-adhesion jig for covering the inner wall of the film forming chamber in the apparatus is installed to prevent the film from adhering to the inner wall of the film forming chamber. ing. Further, in order to prevent the film adhering to this jig from peeling off and becoming a foreign substance, the jig is replaced with a new one before reaching a predetermined thickness.

However, in the replacement work of the deposition preventing jig, it is necessary to open the film formation chamber to the atmosphere, replace the deposition prevention jig, evacuate the film formation chamber, and remove the residual gas by baking the film formation chamber. In many cases, it takes a long time before a vacuum state is reached in which a film can be formed again. Therefore, in order to improve the production efficiency, it has been desired to reduce the frequency of replacing the anti-stick jig as much as possible.

As a foreign matter prevention technique for reducing the frequency of replacement, there is a method of increasing the adhesion strength of an adhered film. Conventional techniques aimed at improving the film adhesion strength include directly sandblasting the surface of the film attachment portion of the deposition-preventing jig, or performing thermal spraying of aluminum (hereinafter referred to as Al) to obtain the surface of the film attachment portion. The adhesion of the film was improved by the anchoring effect by roughening the roughness with the sprayed film. These techniques are disclosed in, for example, JP-A-62-142758 and JP-A-60-120515.

[0008]

Here, in order to clarify the effect on the generation of foreign matter when the blast or Al spraying is performed on the anti-adhesion jig, the present inventors have made a material SUS304 which is often used in a vacuum apparatus. A surface treatment such as blasting or Al spraying is performed on the surface of the anti-adhesion jig manufactured in the above step, and the surface is installed in a film forming chamber of a sputtering apparatus, and a transition of the number of foreign particles is measured while continuously forming titanium nitride (hereinafter, TiN). And compared. The following surface treatment was applied to the SUS304 material.
In addition, since the maximum height Ry described in JIS was measured as the surface roughness when each treatment was performed, it is also described.

(Treatment 1) No treatment (the surface is glossy on the base material) Ry <1 μm (Treatment 2) Blasting using alumina powder of about # 100 (blast treatment A) Ry = about 10 μm (Treatment 3) Blasting using about # 30 alumina powder (blasting treatment B) Ry = about 30 μm (Treatment 4) Pure aluminum thermal spraying (particle diameter of thermal spraying powder is about 30 to 120 μm) Ry = about 100 μm First, treatments 1 to 4 are performed. The surface condition of the anti-adhesion jig was observed using an optical microscope. The one after the treatment 1 is mirror-like to the naked eye, but has microscopically linear cutting marks, and sharp linear corners formed by cutting are arranged on the surface. Was.

In the case of the treatments 2 and 3, small irregularities were randomly formed on the large irregularities on the surface.
In the blasting, the surface of the jig is ground with an alumina powder having a sharp shape, so that the corners of each of the irregularities are sharp. The size of the large unevenness reflects the size of the alumina powder used for blasting, and the unevenness is larger in the process 3 blasted with the large blast powder.

[0011] The one subjected to the process 4 has many large irregularities, but the small irregularities are less than those subjected to the processes 2 and 3. In addition, the shape of the unevenness itself did not have any sharp shape at all, and was all rounded. It is considered that aluminum powder in a molten state is deposited.

FIG. 7 shows the transition of the number of foreign particles when a film is formed by using the jig subjected to the processes 1 to 4. The horizontal axis is the number of processed wafers, and the vertical axis is the number of foreign substances per 8 inch wafer. In a single wafer process, a 0.1 μm film was deposited on the wafer. Further, it is desirable that the number of foreign substances is 100 (pieces / wafer) or less.

If no processing is performed, the number of films
100 or more foreign substances are generated from about one wafer (pieces / wafer), and the number of foreign substances further increases with an increase in the number of deposited films.
In the blasted specification, the number of foreign substances is initially 50 (pieces /
Wafer), but the number of foreign particles increases with the increase in the number of deposited films. In particular, the blasting treatment A increased the film formation number from about 150 to 100 (pieces / wafer), while the blasting treatment B increased from about 350 to 100 (pieces / wafer). became. The number of foreign particles in the case of performing pure aluminum spraying is almost 100 (pieces / wafer) or less even when the film formation exceeds 1000 sheets, but is not so stable when the film formation is 100 sheets or less.
A case of more than 100 (pieces / wafer) is also recognized.

From the above results, it is difficult in the prior art to stably control the number of generated foreign substances to 100 (pieces / wafer) or less over a long period of time, exceeding the number of processed sheets of 1,000 from the initial stage of film formation. I understand.

Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor device in which the number of foreign particles generated is stably controlled to 100 (pieces / wafer) or less for a long period of time such as exceeding 1000 sheets from the initial stage of film formation. Is to do.

[0016]

Means for Solving the Problems The results of the observation of the surface condition of the anti-adhesion jig which has been subjected to each treatment after the film is adhered by using a microscope again will be described. In the case of the treatment 1, the film was deposited along the linear cutting marks, and the adhered film was peeled off in a plate shape along the cutting marks. Cracks occur along the cutting marks,
It is considered that it was released. In the case of the treatment 2 and the treatment 3, the film adheres along the unevenness.
The piece was about m square and peeled off. In the case of the treatment 4, the film adhered along the large unevenness, and no peeled portion was observed.

These results are considered as follows.

Untreated ones have (1) a mirror-like surface with few irregularities and a small anchoring effect, and (2) microscopically, cutting marks are linear sharp parts, and there is a film there. It is considered that the deposited film is easily peeled off due to the concentration of the film stress and the occurrence of cracks.

In the case of blasting, the stress of the adhered film is dispersed by the large irregularities and fine irregularities formed on the surface, and the adhered film is stable without peeling until the film thickness becomes about 10 to 30 μm. However, when the film thickness is further increased to cover the entire unevenness, it is considered that the stress dispersion effect is reduced and the film stress is concentrated by the sharp corners of the unevenness, so that the adhered film is cracked and peeled off.

In the case of aluminum spraying, even if the thickness of the deposited film becomes large due to the large irregularities, the stress dispersion effect is relatively maintained until the film reaches the film thickness that covers the irregularities. It is considered that since no sharp corners are formed, the stress of the adhered film hardly concentrates, and the number of foreign substances was stable even when the number of formed films reached about 1,000. The number of foreign particles was unstable when the number of deposited films was 100 or less, which is presumably because the number of fine irregularities was smaller than that obtained by blasting.

From these facts, the preferable surface shape of the jig is as follows: (1) It has a fractal shape in which fine projections are formed on large irregularities having a height of several hundred μm to several tens μm. And (2) it is considered that each projection does not have a sharp corner even microscopically.

Specifically, with respect to the surface of an anti-adhesion jig installed in a film forming chamber of a semiconductor manufacturing apparatus, a large unevenness having a height of several hundred μm to several tens μm and a roundness of several tens μm or less are formed. By forming the protruding portion having the shape having the shape, it is possible to suppress the adhesion film from peeling off from the adhesion preventing jig during the film formation on the semiconductor substrate.

In order to provide a method of manufacturing a semiconductor device for forming a film on a semiconductor substrate, a method of manufacturing a semiconductor device in which a thin film is deposited while suppressing peeling from a deposition preventing jig installed inside a film forming chamber is provided. The invention has the following features.

According to the method of manufacturing a semiconductor device of the present invention, there is provided a method of forming a film by preventing peeling of a film adhered to an anti-adhesion jig installed in a film forming chamber of a film forming apparatus and suppressing generation of foreign matter during film formation. Wherein at least a part of the surface of the deposition-preventing jig is coated with an aluminum film by thermal spraying, and the surface of the aluminum film has a height of about several tens to about 1 μm on large irregularities of several hundred μm to several tens μm in height A semiconductor device is manufactured by forming a film in a state where an anti-adhesion jig having a small projection is formed.

An anti-adhesion jig installed in a film forming chamber for performing the method of manufacturing a semiconductor device of the present invention first performs a first spraying step in which a first aluminum powder is sprayed by using a spraying apparatus. It is manufactured by performing a second spraying step in which a second aluminum powder having an average particle diameter smaller than that of the first aluminum powder is sprayed continuously to the first spraying step. Here, the average particle size of the first aluminum powder is, for example, about 30 to 200 μm, and the average particle size of the second aluminum powder is 1 to 30 μm or less. The average particle size of the aluminum powder is made smaller. The average particle size of the second aluminum powder is preferably as small as possible within the range where thermal spraying is possible. Due to this coating treatment, the surface of the aluminum sprayed film has a height of several hundred μm to
An anti-adhesion jig can be obtained in which small projections having a height of about several tens to 1 μm are formed on large projections and depressions of several tens of μm.

It is desirable that the adhesion strength between the coating film and the jig is improved by blasting or the like on the surface of the jig. Further, the material for coating the base material of the deposition-preventing jig is not limited to aluminum, but may be any other material that relieves the stress of the film adhered during film formation, for example, aluminum alloy, titanium, titanium alloy, copper However, even one selected from copper alloys may be used. Aluminum alloy containing 15% or more of copper, aluminum alloy containing 5% or more of magnesium, aluminum alloy containing 10% or more of silicon, and 30% of aluminum
%, More preferably a material having a maximum elongation of 100% or more, such as a magnesium alloy containing 4% or more of aluminum, a titanium alloy containing 4% or more of aluminum, and a copper alloy containing 8% or more of aluminum.

The semiconductor device of the present invention is a semiconductor device manufactured by using a film forming method in which generation of foreign matter is suppressed, wherein at least a part of the surface of the deposition preventing jig is coated with an aluminum film by thermal spraying. The aluminum film surface has a height of several hundred μm to several tens μm.
It is characterized in that an anti-adhesion jig having a small projection of about 1 μm is formed by forming a film in a state of being installed in a film forming chamber at the time of film formation.

That is, according to the present invention, it is possible to stably form a film in a state in which the generation of foreign substances is suppressed for a long period of time such as exceeding 1000 sheets to be processed from the initial stage of the film formation. This makes it possible to reduce the frequency of replacement of the attachment jig as much as possible, and to improve production efficiency, thereby enabling cost reduction. Therefore, the generation of foreign substances during film formation is reduced, so that a semiconductor device can be stably manufactured. Further, since the defect rate of the semiconductor device is reduced, a semiconductor device having high reliability and low cost can be provided.

The fields in which the present invention is useful are not only related to the manufacture of semiconductor devices, but also
The present invention is effective for all types of thin disks such as magnetic disks, optical disks, thin film magnetic heads, and liquid crystal panels that are manufactured by depositing thin films.

[0030]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) An embodiment of a method of manufacturing a semiconductor device according to the present invention will be described with reference to a case where a semiconductor device is manufactured by forming a thin film by a sputtering apparatus.

FIG. 1 shows an apparatus configuration for performing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

A target 1 is installed in a vacuum chamber 3 for a film forming chamber of a sputtering apparatus with an electrode insulator 2 interposed therebetween.
Is installed. The semiconductor substrate 6 is carried on a wafer stage. In order to maintain an appropriate internal pressure for sputtering while introducing a plasma generating gas into the vacuum chamber 3 during film formation, the exhaust port 8 is connected to an appropriate exhaust facility including a vacuum pump and a valve. Reference numeral 7 is connected to gas introduction equipment such as a gas flow meter and a valve for introducing a gas for plasma generation while maintaining the pressure during sputtering in the vacuum chamber 3. A power supply 10 is connected via a wiring 9 to apply DC or AC power for sputtering between the semiconductor substrate 6 and the target 1.

Although the film 13 adheres to places other than the semiconductor substrate in the vacuum chamber 3 due to the film formation, in order to prevent the film 13 from adhering to the inner wall of the vacuum chamber 3 and the like, the anti-adhesion jig 4 is evacuated. It is attached so as to cover the inner wall of the chamber 3. The surface of the deposition preventing jig 4 is covered with a coating film 11 so that the adhered film is not peeled off.

In order to show the structure of the deposition preventing jig 4, FIG. In the present invention, since a film is formed in which no foreign matter is generated for a long time immediately after the replacement of the jig, the coating film 11 covering the surface of the jig 4 has a height of 500 μm to 30 μm.
The structure is such that a large unevenness 20 of μm is formed, and a small convex portion 21 having a height of 30 μm to 1 μm is formed on the unevenness 20.

The film forming procedure will be described.

A deposition jig having the structure described with reference to FIGS. 1A and 1B is set in a vacuum chamber. The inside of the vacuum chamber 3 is evacuated through an exhaust port 8 by exhaust equipment. The higher the degree of vacuum inside, the less the influence of oxidation or the like during the film formation. After reaching a predetermined high vacuum, the semiconductor substrate 6 is transferred onto the wafer stage 5, and a gas for plasma generation is introduced from the gas inlet 7. As a gas to be introduced, an argon gas, a krypton gas, or a xenon gas is used, but a nitrogen gas or the like may be mixed for performing reactive sputtering. Vacuum chamber 3
After the internal gas pressure reaches a predetermined gas pressure for performing sputtering, a DC or AC power is applied between the target 1 and the semiconductor substrate 6 by a power supply 10 via a wiring 9 to generate a plasma 12. Then, a thin film of the target material is formed on the semiconductor substrate 6.

When the plasma 12 is formed by film formation, the film 13 also adheres to the surface of the jig 4. Membrane 13
Is attached so as to cover the small projections 21 on the large irregularities 20 on the surface of the anti-adhesion jig 4 as shown in FIG. When using the anti-adhesion jig 4 coated only by normal thermal spraying,
Although large irregularities are formed but small convexities are scarcely formed, a stress dispersion effect can hardly be expected for a thin adhered film.

However, according to the film forming method of the present invention, since a small protrusion having a height of about 30 μm to 1 μm is further formed on the large unevenness, only a thin film of 30 μm or less adheres to the surface of the jig 4. Even in the case where no jig is present, there is an effect of dispersing the stress, and it is possible to form a film in which generation of foreign matter is extremely small for a long period immediately after the replacement of the jig. Further, even when the film attached to the surface of the anti-adhesion jig 4 has grown to 30 μm or more, the large unevenness 20 having a height of 500 μm to 30 μm is formed on the anti-adhesion jig, so that the stress dispersion effect is maintained, The adhered film is less likely to peel off and become foreign matter.

The present invention is not only effective with respect to the method of manufacturing a semiconductor device described above, but also employs a film forming method such as a sputtering method or a CVD method for a magnetic disk, an optical disk, a thin film magnetic head, a liquid crystal panel, and the like. It is effective for all products manufactured using it.

A method of coating the surface of the deposition preventing jig 4 used in FIG. 1 will be described with reference to FIG.

(First Step) First, the surface of the deposition-preventing jig base material 4a is blasted using alumina powder 31 or the like to roughen the surface. The surface roughness is set so that Ry is about 100 to 5 μm. The maximum height is controlled by the jig base material 4
It is possible by selecting an appropriate particle size of the alumina powder according to the material a. For example, SU is attached to the attachment-preventing jig base material 4a.
When the S304 material is used, the surface roughness Ry becomes about 10 μm when alumina powder of about # 100 is selected, and Ry becomes about 30 μm when alumina powder of about # 30 is selected. After the blasting, the alumina powder remaining on the surface of the adhesion preventing jig base material 4a is washed away by ultrasonic cleaning or the like.

(Second Step) A first aluminum powder 32a is sprayed on the blast-proof jig base material 4b by using a first spraying device to form a first aluminum sprayed film 32b.
To form

When the average particle size of the first aluminum powder 32a is 30 μm or less, the surface irregularities of the first sprayed film are not so large, and when the average particle size is 200 μm or more, the sprayed powder is formed on the surface irregularities of the jig base material. Soaking does not occur much, so that the interface between the jig base material and the first sprayed film is soaked, and the adhesion is reduced. Therefore, the average particle size of the first aluminum powder 32a is desirably about 30 to 200 μm.

The first aluminum sprayed film thickness is set to such an extent that the base material 4b of the deposition preventing jig is not exposed. When the thickness from the interface of the base material of the sprayed film to the top of the convex portion of the film surface is defined as the sprayed film thickness, generally, when the sprayed film thickness is twice or more the average particle size of the sprayed powder, the base material 4b is almost covered with the sprayed film. Will be When the base material 4b is exposed, stress is concentrated at the end of the sprayed film when the sputtered film is adhered, and the film tends to peel off, which is not preferable. The larger the average particle size of the sprayed first aluminum powder 32a is, the rougher the surface of the sprayed film is, so that even when the deposited film formed by sputtering is thick, the stress dispersion effect is easily exerted.

(Third Step) Continuing from the second step or from the middle of the second step, the second aluminum powder 3 is formed on the first aluminum sprayed film 32b by using the second spraying equipment.
3a is sprayed to form a second aluminum sprayed film (33b or 33c). Second aluminum powder 33a
Is smaller than the average particle size of the first aluminum powder 32a, for example, 1 to 30 μm.

The timing of the thermal spraying in the third step is preferably continuous with the thermal spraying in the second step or from the middle of the second step. That is, when the first sprayed film 32b formed in the second step is thermally contracted by cooling or the surface is oxidized, and then the second sprayed film (33b or 33c) is deposited,
Thermal stress is generated between the first sprayed film and the second sprayed film, and the adhesion between the first sprayed film and the second sprayed film is reduced by oxidation of the surface, so that the sprayed film itself is easily peeled. Because.

The configuration of the thermal spraying apparatus and the thermal spraying procedure for realizing the coating method of FIG. 2 will be described with reference to FIG.

(First Apparatus Configuration and Thermal Spraying Procedure) A method of coating using two sets of thermal spray equipment will be described with reference to FIG. The configuration of the apparatus uses first and second thermal spraying apparatuses 40 and 50 for plasma spraying a single type of thermal spraying powder. The thermal spraying apparatus is provided with thermal spray guns 41 and 51, respectively, and hoses and cords 42 and 52 for supplying powder to the thermal spray gun and for supplying gas and electric power for generating plasma include powder supply and plasma. It is connected to thermal spray controllers 43 and 53 for controlling the supply of gas and power for generation. Each spraying device has an average particle size of 30-20.
The thermal spray powders 44 and 54 of 0 μm and 1 to 30 μm are charged.

First, a first spraying powder 44 having an average particle diameter of 30 to 200 μm is sprayed using the first spraying device 40.
The sprayed film 11 is sprayed from 1 to spray the sprayed film 45, and the sprayed film 11 is applied to the surface of the roughened surface of the jig base material 4b, and FIG.
The large irregularities 32b described in the above are formed. Continuing with this process, the first thermal spray powder 4 is
The second spray powder 54 having an average particle diameter smaller than that of the fourth spray 4 is ejected from the spray gun 51 as the spray flow 55,
The small convex shape 33b or the film 33c having the convex shape described in FIG. 2 is formed on the surface 2b.

The timing of spraying the first spray powder 44 and the second spray powder 54 will be described with reference to two graphs in FIG. The horizontal axis of the graph is time, and the vertical axis is the weight of the sprayed powder per unit time. The timing of starting the thermal spraying of the second thermal spraying powder 54 is before the thermal spraying of the first thermal spraying powder 44 is completed, and the time (Δt in the figure) for simultaneously thermal spraying the first and second thermal spraying powders is equal to or longer than a predetermined time. To do. As described above, the thermal spraying of the first thermal spraying powder 44 and the thermal spraying of the second thermal spraying powder 54 are set so as to be temporally overlapped, and the process of forming the large irregularities 32b and the process of forming the small convexities 33b (or 33c) are continuously performed. Since the second spray powder 54 can be sprayed before the surface of the large unevenness 32b is oxidized, the small projections 3 due to oxidation can be sprayed.
It is possible to prevent a decrease in adhesion strength to the large unevenness 32b of 3b (or 33c). Conversely, if time elapses after spraying the first sprayed powder, the sprayed film thermally contracts and the surface is oxidized, so that thermal stress is generated between the first sprayed film and the second sprayed film and the surface is oxidized to adhere. This is not preferable because the force is reduced and the sprayed film itself is easily peeled off.

(Second Apparatus Configuration and Method of Use) An apparatus configuration and a method of using an apparatus capable of spraying two or more types of thermal spray powder at a time will be described with reference to FIG. The configuration of the apparatus uses a third thermal spraying apparatus 60 that performs thermal spraying by charging a plurality of thermal spraying powders. The thermal spraying device 60 is provided with a thermal spray gun 61, and hoses and cords 62 and 63 for supplying powder to the thermal spray gun and for supplying plasma gas and electric power include gas for supplying powder and generating plasma. And a thermal spray control unit 64 for controlling the supply of electric power. Each spraying device has an average particle size of 30 to 200.
The thermal spraying powders 44 and 54 of 1 μm and 1 to 30 μm are charged. Average particle size is smaller than spray powder 44 than spray powder 5
Use the smaller one of the four.

First, the first spraying powder 44 having an average particle diameter of 30 to 200 μm is sprayed using the third spraying device 40 into the spraying gun 6.
1 is sprayed as a thermal spray flow 65, and the thermal spray film 11 is applied to the surface of the roughened jig base material 4b whose surface is roughened.
The large irregularities 32b described in the above are formed. Next, the second spray powder 54 having a small average particle diameter is supplied to the spray gun 61, and the first spray powder 44 and the second spray powder 54 are simultaneously sprayed. Stop supplying the first thermal spray powder 44,
The thermal spraying of only the second thermal spraying powder 54 is performed. Through these steps, the small projections 33b or 33c described with reference to FIG. 2 are formed on the surface of the large unevenness 32b. Regarding the timing of the thermal spraying of the first thermal spraying powder 44 and the second thermal spraying powder 54, as described in the graph of FIG.
t is set to be equal to or longer than a predetermined time.

A method of manufacturing a semiconductor device by a film forming method utilizing the above-described technique will be described with reference to FIG.
The description will be made using the cross section of the semiconductor device in which the inside of the circle shown by 5 is enlarged.

(First Step) Formation of Gate Oxide Film 100 and Gate Electrode 101 on Semiconductor Substrate 6, Insulation Film 102
a, insulating film 102b, contact hole 1
12 is a cross-sectional view of the semiconductor device when the process up to the formation of No. 03 is performed.
For the manufacturing method up to this point, a conventionally known technique may be used.

(Second Step) Next, a conductive film 104 is formed using the sputtering film forming method of the present invention. Conductive film 10
4 becomes wiring by etching in a later process,
Unless the film formation method for suppressing the generation of foreign matter as in the present invention is used during the formation of the conductive film 104, foreign matter is generated during the film formation and adheres to the wafer, and the wiring to be formed is disconnected or an adjacent wiring is formed. The possibility of a short circuit with the wiring to be formed increases. However, when the film forming method of the present invention is used, the deposited wiring 104a hardly causes disconnection due to foreign matter or short-circuit due to poor etching for a long period immediately after the replacement of the deposition preventing jig.

Therefore, by using the film forming method according to the present invention, it is possible to stably form in a state in which the generation of foreign substances is suppressed for a long period of time after the replacement of the deposition-inhibiting jig, for more than 1,000 sheets. It becomes possible to film. This makes it possible to provide a semiconductor device having high reliability.

The wiring 104a is formed by etching the conductive film 104.

(Third Step) Subsequently, after depositing an insulating film 102c and forming a through hole 105, a conductive film is deposited and etched in the same manner as in the first step.
b is formed. Regarding the formation of the wiring 104b, as described in the second step, when the sputtering film forming method of the present invention is used, the generation of foreign matter is suppressed, and the reliability of the product is improved. After that, there are deposition of the insulating film 102d, formation of pads for connecting wire wiring when the semiconductor chip is packaged with resin, and the like, but a conventional technique may be used for these steps.

As described above, by using the present invention, it is possible to stably form a film in a state in which the generation of foreign substances is suppressed for a long period of time after the replacement of the deposition-preventing jig, that is, when the number of processed sheets exceeds 1,000. Become. This makes it possible to reduce device defects caused by foreign matters, and to improve the production efficiency by minimizing the frequency of replacement of the deposition preventing jig as much as possible. From the above, it is possible to provide a semiconductor device having high reliability and low cost.

[0061]

As described above, by using the film forming method according to the present invention, the generation of foreign matters can be reduced, and a good film can be formed. By using this film forming method, a sputtering device can be operated stably, and a highly reliable semiconductor device can be manufactured by stable film formation.

[Brief description of the drawings]

1 (a) and 1 (b) show a first embodiment according to the present invention.
FIGS. 1A and 1B are an apparatus configuration diagram of a film forming apparatus when the method of manufacturing a semiconductor device according to the first embodiment is performed and an enlarged cross-sectional view of a circle in FIG.

FIG. 2 is a cross-sectional view showing a process order of a method of manufacturing a deposition-preventing jig used when performing a method of manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 3 is a configuration diagram of a coating facility for performing a surface treatment on an anti-adhesion jig used when the method of manufacturing a semiconductor device according to the first embodiment of the present invention is performed.

FIG. 4 is a spraying characteristic diagram for explaining a coating method when coating is performed on an anti-adhesion jig by the coating equipment described in FIG. 3;

FIG. 5 is a cross-sectional view showing the order of steps of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a foreign matter generation characteristic diagram for explaining the state of generation of foreign matter due to a difference in the conventional surface treatment of the deposition preventing jig.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Target, 2 ... Electrode insulator, 3 ... Vacuum chamber for film-forming room, 4 ... Deposition-proof jig, 5 ... Wafer stage, 6 ... Semiconductor substrate, 7 ... Inlet, 8 ... Exhaust port, 9 ... Wiring, DESCRIPTION OF SYMBOLS 10 ... Power supply, 11 ... Coating film, 12 ... Plasma, 13 ... Sputter adhesion film in a film-forming chamber, 14 ... Enlarged part of the cross-section of a deposition-proof jig, 15 ... Enlarged part of the cross-section of a semiconductor substrate, 20 ... Unevenness, 2
DESCRIPTION OF SYMBOLS 1 ... Convex part, 31 ... Alumina powder for blast, 4a ...
Prevention jig base material before blast treatment, 4b: Prevention jig base material after blast treatment, 32a: First aluminum powder,
32b: first aluminum sprayed film, 33a: second aluminum powder, 33b or 33c: second aluminum sprayed film, 40: first spraying device, 50: second spraying device, 41: spraying of first spraying device Gun, 51: Thermal spray gun of the second thermal spraying device, 42: Hose and cords of the first thermal spraying device, 52: Hose and cords of the second thermal spraying device, 4
3 ... Control part of the first thermal spraying device, 53 ... Control part of the second thermal spraying device, 44 ... First thermal spraying powder having an average particle diameter of 30 to 200 m, 54 ... Second thermal spraying having an average particle diameter of 1 to 30 m Powder, 45 ... Thermal spray flow by the first thermal spray powder, 55 ...
Thermal spray flow by the second thermal spray powder, 60: third thermal spraying device, 61: thermal spray gun, 62, 63 ... hoses and cords,
64: third spraying controller, 65: spraying flow by the first and second spraying powders, 100: gate oxide film, 101: gate electrode, 102a, 102b, 102c, 102d ...
Insulating films, 104a, 104b: conductive thin films for wiring, 10
3 ... contact hole, 105 ... through hole.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hide Kobayashi 5--20-1, Josuihonmachi, Kodaira-shi, Tokyo Inside Semiconductor Division, Hitachi, Ltd. In the Semiconductor Division, Hitachi Ltd. (72) Inventor Junichi Uchida 3-2-2 Fujibashi, Ome-shi, Tokyo Inside Hitachi Tokyo Electronics Co., Ltd.

Claims (3)

[Claims] In a method of manufacturing a semiconductor device in which a deposition prevention jig is installed in a film forming chamber of a film forming apparatus when a thin film is formed on a semiconductor substrate, generation of foreign matter during film formation is suppressed. The surface of the deposition preventing jig installed in the film forming chamber of the apparatus has a maximum height of 30 to 5
A method for manufacturing a semiconductor device, comprising: irregularities of 00 microns; and convexities having a height of 1 to 30 microns are formed on the surface of the irregularities. 2. A semiconductor device in which when a wiring or a capacitor electrode made of a conductive thin film is formed by a sputtering apparatus, a deposition preventing jig is installed in a film forming chamber of the film forming apparatus to suppress generation of foreign matter during film formation. In the manufacturing method, at least a part of the surface of the anti-adhesion jig installed inside the film forming chamber of the sputtering apparatus is coated with a conductive film by thermal spraying, and the surface of the conductive film has a height of 500 μm. A semiconductor device is manufactured by forming a film in a state where an anti-adhesion jig in which a small protrusion having a height of about 30 to 1 μm is further formed on large unevenness of about 30 μm is provided, thereby manufacturing a semiconductor device. Method. 3. A semiconductor device which suppresses generation of foreign matter during film formation by installing an anti-adhesion jig in a film forming chamber of a film forming device when forming a wiring or a capacitor made of a conductive thin film by a sputtering device. In the manufacturing method, a sprayed powder having an average particle diameter of 200 μm to 30 μm and an average particle diameter of 3 μm are formed on at least a part of the surface of the deposition preventing jig installed inside the film forming chamber of the sputtering apparatus.
A method of manufacturing a semiconductor device, comprising: forming a film in a state where an anti-adhesion jig on which a thermal spray powder of 0 to 1 μm is sprayed is installed; and manufacturing a semiconductor device.