CN108088591B - Fractal type manganese copper film ultrahigh pressure sensor - Google Patents

Fractal type manganese copper film ultrahigh pressure sensor Download PDF

Info

Publication number
CN108088591B
CN108088591B CN201711344589.7A CN201711344589A CN108088591B CN 108088591 B CN108088591 B CN 108088591B CN 201711344589 A CN201711344589 A CN 201711344589A CN 108088591 B CN108088591 B CN 108088591B
Authority
CN
China
Prior art keywords
sensitive element
electrodes
pressure sensor
manganin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711344589.7A
Other languages
Chinese (zh)
Other versions
CN108088591A (en
Inventor
赵玉龙
张国栋
赵云
韦学勇
王馨晨
赵友
张琪
任炜
李慧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Jiaotong University
Original Assignee
Xian Jiaotong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Jiaotong University filed Critical Xian Jiaotong University
Priority to CN201711344589.7A priority Critical patent/CN108088591B/en
Publication of CN108088591A publication Critical patent/CN108088591A/en
Application granted granted Critical
Publication of CN108088591B publication Critical patent/CN108088591B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/04Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges

Abstract

A fractal manganin film ultrahigh pressure sensor comprises a substrate, wherein a sensitive element and electrodes are sputtered on the substrate through an MEMS (micro electro mechanical System) technology, the input end and the output end of the sensitive element are respectively connected with the two electrodes, and a layer of organic insulating film is adhered on the surfaces of the sensitive element and the electrodes; the sensing element has a self-similar fractal structure and is formed by sputtering a manganin target material, the substrate is made of an organic glass material, and the organic insulating film is made of polytetrafluoroethylene or polyimide; the invention has the characteristics of high precision, quick response, large output signal, suitability for micro-scale detonation pressure measurement and the like, the test precision can reach about 3 percent, and the invention is suitable for measuring the ultra-high pressure generated by micro-scale detonation or impact within the range of 1-50 Gpa.

Description

Fractal type manganese copper film ultrahigh pressure sensor
Technical Field
The invention belongs to the technical field of ultrahigh pressure sensors, and particularly relates to a fractal manganese-copper film ultrahigh pressure sensor.
Background
The manganin is a conventional ternary alloy material, and comprises the main components of 83-87% of copper, 11-13% of manganese and 2-4% of nickel. Since 1903 the first time people found a piezoresistive effect on this material, it was widely used in the measurement of static pressure. Until the last 60 s of the century, manganin sensors were first applied to dynamic high pressure testing by Fuller and Price, Bernstein and Keough et al. Years of research show that the manganese-copper alloy has low piezoresistive coefficient, but has the advantages of high sensitivity, fast response, good linearity, small resistance temperature coefficient and the like, so that the manganese-copper alloy is very suitable for manufacturing ultrahigh pressure sensors. The effective range of the pressure sensor can reach dozens of GPa, the pressure sensor is the ultrahigh pressure sensor with the highest upper limit of pressure measurement at present, and the pressure sensor is mainly applied to the pressure measurement of explosive shock waves and explosive detonation waves of armors and nuclear weapons and other national defense fields.
With the miniaturization of weapons and firearms, the measurement of detonation pressure at a micro-scale has become an urgent problem to be solved. The detonation wave of the micro-scale charge is typical two-dimensional steady flow, if the length of a sensitive element of the manganin sensor is far less than the curvature radius of a detonation wave front, the detonation wave is approximate to a plane wave, and the measuring condition is more ideal and the result is more accurate. Most of the existing manganin sensors have larger sensitive element sizes, and are not suitable for measuring the detonation pressure at a micro scale; the manganin sensor with smaller sensitive element has smaller resistance value and is not suitable for measuring the low-pressure section of ultrahigh pressure; moreover, the substrates of some manganin sensors are made of inorganic materials, which can cause certain errors in calculating the detonation pressure by using an impedance matching method.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a fractal type manganin thin film ultrahigh pressure sensor which has the characteristics of high precision, quick response, large output signal, suitability for micro-scale detonation pressure measurement and the like.
In order to achieve the purpose, the invention adopts the technical scheme that:
a fractal manganese copper film ultrahigh pressure sensor comprises a substrate 2, a sensitive element 4 and an electrode 1 are sputtered on the substrate 2 through an MEMS technology, the input end and the output end of the sensitive element 4 are respectively connected with the two electrodes 1, and a layer of organic insulating film 3 is adhered on the surfaces of the sensitive element 4 and the electrodes 1; the sensing element 4 has a self-similar fractal structure and is formed by sputtering a manganin target material, the area occupied by the sensing element 4 is within a circular range with the diameter of 0.2mm, and the thickness of the sensing element is 1 mu m.
The electrodes 1 are arranged according to the leading-out direction of the input end and the output end of the sensitive element 4, if the leading-out direction is at the same side, the four electrodes 1 are arranged at the same side, and if the leading-out direction is at two sides, the four electrodes 1 are symmetrically arranged at two sides.
The substrate 2 is made of organic glass material and has the thickness of 0.5 mm.
The organic insulating film 3 is made of polytetrafluoroethylene or polyimide and has a thickness of 10-25 mu m.
The invention has the beneficial effects that:
the fractal type manganin film ultrahigh pressure sensor realizes the miniaturization of the sensitive element 4 through the MEMS technology, so that the fractal type manganin film ultrahigh pressure sensor is suitable for measuring the detonation pressure of micro-scale explosive loading; the sensing element 4 adopts a fractal structure, can realize large resistance in a tiny area, increases the output signal of the sensor and is suitable for measuring a low-pressure section of ultrahigh pressure; the substrate 2 is made of an organic glass material, so that the shock wave is subjected to impedance matching in the propagation process, and the calculation error caused by interface reflection is avoided; the thin film of the sensitive element 4 is realized by sputtering, and the response time of the sensor can be effectively improved. In summary, the fractal type manganin film ultrahigh pressure sensor has the characteristics of high precision, fast response, large output signal, suitability for micro-scale detonation pressure measurement and the like.
Drawings
Fig. 1 is a top view of a fractal-type manganin thin-film ultrahigh-pressure sensor of the invention.
Fig. 2 is an enlarged view of the sensor 4.
Fig. 3 is a side view of a fractal-type manganin thin film ultra-high pressure sensor of the present invention.
FIG. 4 is a diagram of the detonation wave waveform of an LD-14 detonator recorded by the fractal type manganin thin film ultrahigh pressure sensor, wherein the abscissa is time and the ordinate is voltage.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Referring to fig. 1, 2 and 3, a partial manganese copper film ultrahigh pressure sensor comprises a substrate 2, a sensitive element 4 and an electrode 1 are sputtered on the substrate 2 through an MEMS technology, the input end and the output end of the sensitive element 4 are respectively connected with the two electrodes 1, and a layer of organic insulating film 3 is adhered on the surfaces of the sensitive element 4 and the electrodes 1; the sensing element 4 has a self-similar fractal structure and is formed by sputtering a manganin target material, so that a large resistance value can be contained in a small area, and a high output signal is generated, so that the fractal type manganin film ultrahigh pressure sensor is suitable for measuring a low-pressure section of ultrahigh pressure; the area occupied by the sensitive element 4 is within a circular range with the diameter of 0.2mm, and the sensitive element is suitable for measuring the detonation pressure under the microscale; the thickness is 1 μm, and the response time of the fractal type manganese copper film ultrahigh pressure sensor can be effectively improved.
The electrodes 1 are arranged according to the leading-out direction of the input end and the output end of the sensitive element 4, if the leading-out direction is at the same side, the four electrodes 1 are arranged at the same side, if the leading-out direction is at two sides, the four electrodes 1 are symmetrically arranged at two sides, and the operation is convenient for manufacturing and installing the manganese-copper film ultrahigh pressure sensor in a form division manner.
The substrate 2 is made of organic glass material, and because the impact impedance of the organic glass (PMMA) is close to that of explosive detonation products, the organic glass is often used as a protective medium for measuring a detonation pressure sensor, and the organic glass material can enable detonation shock waves to achieve impedance matching in the propagation process, so that calculation errors caused by impedance mismatching are avoided.
The organic insulating film 3 is made of polytetrafluoroethylene or polyimide or other organic materials with good insulating property, and the thickness of the organic insulating film is 10-25 mu m.
The working principle of the invention is as follows:
the fractal type manganin film ultrahigh pressure sensor is subjected to ultrahigh pressure dynamic test, the test object is a detonator, the pressure is about 25.71GPa, and the test device is a small explosion container. The detonation wave generated after the detonator is triggered acts on the sensitive element 4, the fractal type manganin film ultrahigh pressure sensor instantly obtains response, and records the complete detonation wave waveform, as shown in figure 4, the fractal type manganin film ultrahigh pressure sensor completely records the response process of the sensor, and the sensor has faster response.
The service life of the fractal type manganese copper film ultrahigh pressure sensor is about 1 mu s, the ultrahigh pressure in the range of 1-50 GPa can be measured, the precision is about 3%, and the response time is 20-50 ns. The fractal type manganin film ultrahigh pressure sensor is mainly used for testing the pressure of shock waves or detonation waves, such as the detonation pressure of small-size explosive, the impact pressure of a light gas gun and the like.

Claims (1)

1. A fractal manganin thin film ultrahigh pressure sensor comprises a substrate (2), and is characterized in that: a sensitive element (4) and an electrode (1) are sputtered on the substrate (2) through an MEMS technology, the input end and the output end of the sensitive element (4) are respectively connected with the two electrodes (1), and a layer of organic insulating film (3) is adhered on the surfaces of the sensitive element (4) and the electrodes (1); the sensitive element (4) has a self-similar fractal structure and is formed by sputtering a manganin target material, the area occupied by the sensitive element (4) is within a circular range with the diameter of 0.2mm, and the thickness is 1 mu m;
the electrodes (1) are arranged according to the leading-out direction of the input end and the output end of the sensitive element (4), if the leading-out direction is at the same side, the four electrodes (1) are arranged at the same side, and if the leading-out direction is at two sides, the four electrodes (1) are symmetrically arranged at two sides;
the substrate (2) is made of organic glass material;
the organic insulating film (3) is made of polytetrafluoroethylene or polyimide and has a thickness of 10-25 mu m.
CN201711344589.7A 2017-12-15 2017-12-15 Fractal type manganese copper film ultrahigh pressure sensor Active CN108088591B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711344589.7A CN108088591B (en) 2017-12-15 2017-12-15 Fractal type manganese copper film ultrahigh pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711344589.7A CN108088591B (en) 2017-12-15 2017-12-15 Fractal type manganese copper film ultrahigh pressure sensor

Publications (2)

Publication Number Publication Date
CN108088591A CN108088591A (en) 2018-05-29
CN108088591B true CN108088591B (en) 2020-09-01

Family

ID=62176274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711344589.7A Active CN108088591B (en) 2017-12-15 2017-12-15 Fractal type manganese copper film ultrahigh pressure sensor

Country Status (1)

Country Link
CN (1) CN108088591B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108896235B (en) * 2018-06-12 2020-05-26 西安交通大学 MEMS flexible manganin-constantan composite type ultrahigh pressure sensor and manufacturing method thereof
CN110926281B (en) * 2019-12-19 2021-02-02 西安交通大学 Micro-scale explosive loading detonation pressure and detonation velocity testing system based on MEMS pressure conduction probe
CN112539859B (en) * 2020-11-26 2022-02-11 西安交通大学 Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1131423C (en) * 2001-02-22 2003-12-17 电子科技大学 Thin film type superhigh-pressure Mg-Cu sensor
CN1297808C (en) * 2003-09-09 2007-01-31 电子科技大学 Multiple array copper-manganese thin film super high pressure transducer and method for making same
CN100346143C (en) * 2004-12-17 2007-10-31 电子科技大学 Compositely packaged foil type manganin superhigh pressure sensor
CN105340369A (en) * 2013-02-06 2016-02-17 伊利诺伊大学评议会 Stretchable electronic systems with containment chambers
CN104406728A (en) * 2014-11-25 2015-03-11 北京理工大学 Manganin pressure sensor and device for measuring underwater explosion near-field impact wave pressure

Also Published As

Publication number Publication date
CN108088591A (en) 2018-05-29

Similar Documents

Publication Publication Date Title
CN108088591B (en) Fractal type manganese copper film ultrahigh pressure sensor
US20160320256A1 (en) Capacitive pressure-measuring cell having at least one temperature sensor and pressure measurement method
CN102589760B (en) Minitype capacitance-type mechanical sensor and preparation method thereof
CN102928131B (en) Quartz resonance beam type micro-pressure sensor chip
US8656785B1 (en) Multi-diaphragm pressure sensors
CN103900460A (en) Semiconductor film high-temperature deformation sensor
EP2720019A1 (en) Pressure transducer using ceramic diaphragm
CN113008501A (en) Device and method for testing impact mechanical property of elastomer
CN110736421A (en) Thin film strain gauge for elastomer strain measurement and preparation method thereof
CN109212264A (en) The electric acceleration transducer of the shearing flexure of annular and stepped construction acceleration transducer
CN1272612C (en) High temperature pressure sensor workable in high range, high over loading
CN108896235B (en) MEMS flexible manganin-constantan composite type ultrahigh pressure sensor and manufacturing method thereof
US9021893B2 (en) High survivability fluid flow sensor having a load cell for detecting loading on the sensor probe
CN106248283A (en) A kind of high-temperature-resistance pressure sensor being applicable to temperature and pressure explosive field
CN109282941A (en) A kind of shock measuring system based on monoblock type Hopkinson bar PVDF sensor
RU2589494C1 (en) Capacitive inertial pressure sensor, method of its assembly and method of pressure measuring
CN103018123A (en) High-speed loading material dynamic indentation experimental method
US8943896B2 (en) Pressure transducer using ceramic diaphragm
CN1297808C (en) Multiple array copper-manganese thin film super high pressure transducer and method for making same
CN1955693A (en) Gas micro-flowmeter
CN203940939U (en) A kind of anti-corrosion pressure transducer based on PDMS pressure drag and stainless steel electric capacity
Yiannakopoulos A review of manganin gauge technology for measurements in the gigapascal range
CN102928134B (en) Carbon-resistance high pressure sensor
CN112484902B (en) Capacitive pressure sensor and temperature drift solution
Arons et al. Design and use of piezoelectric gauges for measurement of Large Transient Pressures

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant