CN112539859B - Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof - Google Patents
Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof Download PDFInfo
- Publication number
- CN112539859B CN112539859B CN202011366780.3A CN202011366780A CN112539859B CN 112539859 B CN112539859 B CN 112539859B CN 202011366780 A CN202011366780 A CN 202011366780A CN 112539859 B CN112539859 B CN 112539859B
- Authority
- CN
- China
- Prior art keywords
- molybdenum disulfide
- amorphous molybdenum
- electrode
- film
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses an amorphous molybdenum disulfide flexible pressure sensor and a preparation method thereof, wherein the amorphous molybdenum disulfide flexible pressure sensor comprises: the flexible substrate is provided with electrodes and a plurality of amorphous molybdenum disulfide films; the electrode and the baseThe amorphous molybdenum disulfide film is contacted; wherein, the plurality of amorphous molybdenum disulfide films form a pressure sensitive element. The preparation method has simple process, easy operation control and MoS2The film has high deposition rate, compact and uniform film formation and is easy for mass production; prepared MoS2The resistance value of the film after being pressed is obviously changed and regularly changed along with the change of the pressure, the output performance is excellent, and the flexible pressure sensor prepared based on the piezoresistive film has the advantages of wide range, super sensitivity, flexibility, easy deformation, suitability for multi-scale measurement and the like.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to an amorphous molybdenum disulfide flexible pressure sensor and a preparation method thereof.
Background
Molybdenum disulfide (MoS)2) As a transition metal disulfide material, due to its excellent electrical and optical properties and extraordinary specific surface area, it has recently received attention from researchers at home and abroad. In 2011, the Andraskis research team at Federal institute of technology, Switzerland used MoS of only 0.65nm2The first batch of transistors are manufactured by the single-layer sheet, and the Moore's law is expected to be promoted again; until 2014, two-dimensional MoS2Research into piezoresistive materials is also being conducted.
MoS in view of atomic layer thickness2Has very high Young modulus and breaking strength, and 1-3 layers of MoS which are mechanically stripped by AndrasKis research team2Prepare NEMS strain sensor and find that large strain can regulate MoS2And a direct band gap of (1) and obtaining a dual layer MoS2The piezoresistive factor of (A) is-224 +/-19. Years of research have shown that two-dimensional MoS2Has excellent piezoresistive effect.
Two-dimensional MoS2The preparation method comprises a micro-mechanical stripping method, a chemical vapor deposition method, a liquid phase ultrasonic stripping method, a hydrothermal method and the like, and the two-dimensional MoS can be obtained by the methods2However, the currently-recorded MoS has the limitations of low yield, poor repeatability, low degree of exfoliation, harsh preparation conditions, and the like2The piezoresistive pressure sensor is mostly prepared by adopting the methods, and the mass production is difficult to realize.
In summary, a new amorphous molybdenum disulfide flexible pressure sensor and a method for manufacturing the same are needed.
Disclosure of Invention
The invention aims to provide an amorphous molybdenum disulfide flexible pressure sensor and a preparation method thereof, so as to solve one or more technical problems. The preparation method has simple process, easy operation control and MoS2The film has high deposition rate, compact and uniform film formation and is easy for mass production; prepared MoS2The resistance value of the film after being pressed is obviously changed and regularly changed along with the change of the pressure, the output performance is excellent, and the flexible pressure sensor prepared based on the piezoresistive film has the advantages of wide range, super sensitivity, flexibility, easy deformation, suitability for multi-scale measurement and the like.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention relates to an amorphous molybdenum disulfide flexible pressure sensor, which comprises:
the flexible substrate is provided with electrodes and a plurality of amorphous molybdenum disulfide films; the electrode is in contact with the amorphous molybdenum disulfide film;
wherein, the plurality of amorphous molybdenum disulfide films form a pressure sensitive element.
The invention further improves the method and also comprises the following steps: an organic insulating film; the organic insulating film covers the whole amorphous molybdenum disulfide film and part of the electrode.
The invention is further improved in that the electrode and the amorphous molybdenum disulfide film are sputtered by MEMS technology.
The invention is further improved in that the plurality of amorphous molybdenum disulfide films form an array structure, and MoS is adopted by a magnetron sputtering method2Sputtering the target material.
A further development of the invention is that each cell size of the array structure is 1mm x 1mm and the thickness is 1 μm.
A further development of the invention is that the electrode comprises: a main path electrode and a branch path electrode; the branch electrode adopts a comb structure and is in contact with a pressure sensitive element formed by an amorphous molybdenum disulfide film.
The invention further improves the method and also comprises the following steps: an organic insulating film; the organic insulating film covers the branch electrode and the pressure sensitive element formed by the amorphous molybdenum disulfide film; the organic insulating film is insulating oil and has a thickness of 10-30 mu m.
The invention is further improved in that the flexible substrate adopts polydimethylsiloxane or polyimide, and the thickness of the flexible substrate is 100-500 mu m.
The invention discloses a preparation method of an amorphous molybdenum disulfide flexible pressure sensor, which comprises the following steps:
preparing an electrode layer on a flexible substrate and patterning to form an electrode;
preparing a plurality of amorphous molybdenum disulfide films on a flexible substrate by adopting a magnetron sputtering or electron beam evaporation process;
wherein the electrode is in contact with the amorphous molybdenum disulfide film; the plurality of amorphous molybdenum disulfide films form a pressure sensitive element.
The invention is further improved in that the electrode layer is prepared on the surface of the flexible substrate by adopting photoetching, magnetron sputtering or evaporation process and patterning is realized.
Compared with the prior art, the invention has the following beneficial effects:
MoS of the invention2The resistance value of the film after being pressed is obviously changed and regularly changed along with the change of the pressure, and the output performance is excellent; the flexible function of the sensor is realized through the flexible substrate; the flexible pressure sensor prepared based on the piezoresistive film has the advantages of wide range, super sensitivity, flexibility, easy deformation, suitability for multi-scale measurement and the like.
The amorphous MoS prepared based on magnetron sputtering or electron beam evaporation and other processes2The ultrathin high-performance flexible pressure sensor can find the amorphous MoS for the first time2The piezoresistive pressure sensor has good piezoresistive effect, and can realize the measurement of micro pressure on an ultrathin flexible substrate; miniaturization of sensitive element is realized by MEMS technologySo that the sensitivity is higher; the sensitive element is prepared uniformly in large area by adopting methods such as magnetron sputtering or electron beam evaporation, and the like, and the multi-scale preparation of the flexible sensor can be realized.
According to the invention, the sensitive element has good sealing property under the packaging protection of the organic insulating film, and water vapor in the environment is prevented from entering the flexible pressure sensor, so that the performance of the flexible pressure sensor is ensured, and the service life of the flexible pressure sensor is prolonged.
The invention discloses amorphous molybdenum disulfide (MoS) prepared by magnetron sputtering or electron beam evaporation and other processes2) A preparation method of the ultrathin high-performance flexible pressure sensor; prepared amorphous MoS2The ultrathin high-performance flexible pressure sensor has the characteristics of wide range, ultrasensitiveness, flexibility, easy deformation, long service life, suitability for multi-scale measurement and the like. Specifically, the invention discovers the amorphous MoS prepared by magnetron sputtering, electron beam evaporation and other processes for the first time2Has piezoresistive effect, simple preparation process, large-area production and wide application prospect. The amorphous MoS prepared by the magnetron sputtering or electron beam evaporation technology2The preparation method of the ultrathin high-performance flexible pressure sensor has simple process, easy operation control and MoS2The film has high deposition rate, compact and uniform film formation and is easy for mass production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below; it is obvious that the drawings in the following description are some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is an amorphous MoS of an embodiment of the invention2The schematic view of the overlook structure of the ultrathin high-performance flexible pressure sensor;
FIG. 2 is a schematic diagram of an electrode structure according to an embodiment of the present invention;
FIG. 3 is a drawing of the present inventionIn the examples, amorphous MoS2The schematic side view structure of the ultrathin high-performance flexible pressure sensor;
FIG. 4 is an illustration of an amorphous MoS according to an embodiment of the present invention2A pressure test schematic diagram recorded by the ultra-thin high-performance flexible pressure sensor; wherein the abscissa is pressure and the ordinate is absolute resistance Δ R/R;
in the figure, 1, a flexible substrate; 2. an electrode; 3. an amorphous molybdenum disulfide film; 4. an organic insulating film.
Detailed Description
In order to make the purpose, technical effect and technical solution of the embodiments of the present invention clearer, the following clearly and completely describes the technical solution of the embodiments of the present invention with reference to the drawings in the embodiments of the present invention; it is to be understood that the described embodiments are only some of the embodiments of the present invention. Other embodiments, which can be derived by one of ordinary skill in the art from the disclosed embodiments without inventive faculty, are intended to be within the scope of the invention.
Example 1
The amorphous MoS of the embodiment of the invention2An ultra-thin high performance flexible pressure sensor comprising: a flexible substrate 1; an electrode 2 and an amorphous molybdenum disulfide film 3 are sputtered on the flexible substrate 1 through the MEMS technology, and an organic insulating film 4 is printed on the surfaces of the sensitive element and the electrode. Wherein the amorphous molybdenum disulfide film forms MoS2A piezoresistive sensing element.
The amorphous MoS prepared based on magnetron sputtering or electron beam evaporation and other processes2The ultrathin high-performance flexible pressure sensor can find the amorphous MoS for the first time2The piezoresistive pressure sensor has good piezoresistive effect, and can realize the measurement of micro pressure on an ultrathin flexible substrate; the flexible function of the sensor is achieved by the flexible substrate. The amorphous MoS2The ultrathin high-performance flexible pressure sensor has the characteristics of wide range, ultrasensitiveness, flexibility, easy deformation, long service life, suitability for multi-scale measurement and the like.
In the embodiment of the invention, the miniaturization of the sensitive element is realized through the MEMS technology, so that the sensitive element has higher sensitivity; the sensitive element is prepared uniformly in large area by adopting methods such as magnetron sputtering or electron beam evaporation, and the like, and the multi-scale preparation of the flexible sensor can be realized.
Example 2
Referring to FIG. 1, the embodiment of the present invention differs from embodiment 1 only in that the MoS formed by the amorphous molybdenum disulfide film 32Each cell size in the piezoresistive sensitive elements is 1mm x 1mm and the thickness is 1 μm. The sensitive element is of an array structure and adopts MoS2Sputtering the target material.
Example 3
The embodiment of the invention is different from the embodiment 1 only in that the flexible substrate 1 adopts Polydimethylsiloxane (PDMS) or Polyimide (PI) and has a thickness of 100-500 μm. This is because Polydimethylsiloxane (PDMS) has good flexibility and flexibility, and Polyimide (PI) has strong bending properties and good chemical stability. Meanwhile, PDMS and PI have good combination with electrons, and are widely applicable to flexible electrons.
Example 4
Referring to fig. 1 and fig. 2, the embodiment of the present invention is different from embodiment 1 only in that the electrode 2 is composed of a main branch electrode and a branch electrode, and the branch electrode is in contact with the sensing element by using a comb structure.
The electrode 2 consists of a main circuit electrode and a branch circuit electrode, and the branch circuit electrode is in contact with a sensitive element consisting of an amorphous molybdenum disulfide film by adopting a comb structure. The electrode 2 is patterned on the surface of the flexible substrate 1 by adopting photoetching, magnetron sputtering or evaporation process so as to improve the sensitivity of the sensor. Manufacturing the electrode 2: firstly, photoetching the surface of a flexible substrate 1, spin-coating a photoresist to make the surface uniform, curing the spin-coated uniform photoresist, photoetching the surface under the condition of 365nm of UV by using a mask plate, and developing the surface in 5 per mill of NaOH solution after photoetching; secondly, preparing an electrode layer, and sputtering or evaporating Cr with the thickness of 50nm and sputtering or evaporating Au with the thickness of 150 nm; thirdly, the electrode 2 is patterned by soaking and stripping in acetone.
Example 5
The difference between the embodiment of the invention and the embodiment 1 is only that the sensitive element adopts a magnetron sputtering method and MoS2The target material is formed by sputtering and has good piezoresistive effect.
The piezoresistive sensitive element adopts a magnetron sputtering or electron beam evaporation method, and combines with an MEMS technology to realize the micro-patterning of the sensitive element and improve the sensitivity of the sensor.
Example 6
Referring to fig. 1 and fig. 3, the embodiment of the present invention is different from embodiment 1 only in that the organic insulating film 4 is made of insulating oil and has a thickness of 10 to 30 μm.
In the embodiment of the invention, the sensitive element has good sealing property under the packaging protection of the organic insulating film 4, and water vapor in the environment is prevented from entering the flexible pressure sensor, so that the performance of the flexible pressure sensor is ensured, and the service life of the flexible pressure sensor is prolonged. The organic insulating film 4 is made of insulating oil, the thickness of the organic insulating film is 10-30 mu m, and the sensor can be well sealed and packaged after the insulating oil is solidified.
The working principle of the invention is as follows:
the invention relates to an amorphous MoS2Ultra-thin high performance flexible pressure sensor, sensitive element deposited on surface of flexible substrate 1, i.e. MoS2MoS when the film is subjected to pressure changes2The film is strained under the action of stress, the grain structure of the film is changed, the forbidden band width is changed, and the carrier transport mechanism of the film is changed, so that the resistance of the sensitive element is regularly changed.
Example 7
Referring to FIG. 4, it can be seen that the amorphous MoS is deposited on the surface of the flexible substrate 12Under the action of pressure, the resistance change rate Delta R/R of the pressure-sensitive resistor changes regularly along with the change of acting force. When the surface pressure is increased, the resistance change rate Delta R/R is obviously increased; when the surface pressure is reduced, the resistance change rate DeltaR/R is continuously reduced.
Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can make modifications and equivalents to the embodiments of the present invention without departing from the spirit and scope of the present invention, which is set forth in the claims of the present application.
Claims (5)
1. An amorphous molybdenum disulfide flexible pressure sensor, comprising:
the device comprises a flexible substrate (1), wherein an electrode (2) and a plurality of amorphous molybdenum disulfide films (3) are arranged on the flexible substrate (1); the electrode (2) is in contact with the amorphous molybdenum disulfide film (3);
the amorphous molybdenum disulfide films (3) form a pressure sensitive element;
the electrode (2) and the amorphous molybdenum disulfide film (3) are formed by sputtering through an MEMS technology;
the amorphous molybdenum disulfide films (3) form an array structure, and MoS is adopted by a magnetron sputtering method2Sputtering the target material;
the electrode (2) comprises: a main path electrode and a branch path electrode; the branch electrode adopts a comb structure and is in contact with a pressure sensitive element formed by an amorphous molybdenum disulfide film (3);
further comprising: an organic insulating film (4); the organic insulating film (4) covers the branch electrode and the pressure sensitive element formed by the amorphous molybdenum disulfide film (3); the organic insulating film (4) is insulating oil and has a thickness of 10-30 mu m.
2. The amorphous molybdenum disulfide flexible pressure sensor of claim 1, wherein each cell of said array structure has a size of 1mm x 1mm and a thickness of 1 μm.
3. The amorphous molybdenum disulfide flexible pressure sensor according to claim 1, wherein the flexible substrate (1) is polydimethylsiloxane or polyimide and has a thickness of 100-500 μm.
4. A method for making the amorphous molybdenum disulfide flexible pressure sensor of claim 1, comprising the steps of:
preparing an electrode layer on a flexible substrate (1) and patterning to form an electrode (2);
preparing a plurality of amorphous molybdenum disulfide films (3) on a flexible substrate (1) by adopting a magnetron sputtering or electron beam evaporation process;
wherein the electrode (2) is in contact with an amorphous molybdenum disulphide film (3); the amorphous molybdenum disulfide films (3) form a pressure sensitive element.
5. The preparation method according to claim 4, characterized in that the electrode layer is prepared and patterned on the surface of the flexible substrate (1) by photolithography, magnetron sputtering or evaporation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011366780.3A CN112539859B (en) | 2020-11-26 | 2020-11-26 | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011366780.3A CN112539859B (en) | 2020-11-26 | 2020-11-26 | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112539859A CN112539859A (en) | 2021-03-23 |
| CN112539859B true CN112539859B (en) | 2022-02-11 |
Family
ID=75016367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011366780.3A Active CN112539859B (en) | 2020-11-26 | 2020-11-26 | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112539859B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022233390A1 (en) * | 2021-05-03 | 2022-11-10 | Nanoing J.D.O.O. | Flexible acceleration sensor based on 2d materials and its use |
| CN113340480B (en) * | 2021-07-14 | 2023-12-01 | 苏州能斯达电子科技有限公司 | Flexible pressure sensor and preparation method thereof |
| CN114295255B (en) * | 2021-12-29 | 2023-09-29 | 金陵科技学院 | Flexible pressure sensor based on 3D prints |
| CN114646419B (en) * | 2022-03-23 | 2023-06-09 | 中山大学 | Gas pressure sensor, preparation method thereof and gas pressure detection method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108344532A (en) * | 2017-01-23 | 2018-07-31 | 华邦电子股份有限公司 | Pressure sensor and its manufacturing method |
| CN108088591B (en) * | 2017-12-15 | 2020-09-01 | 西安交通大学 | Fractal type manganese copper film ultrahigh pressure sensor |
| CN109507451B (en) * | 2018-10-24 | 2020-08-14 | 西安交通大学 | Acceleration sensor chip based on molybdenum disulfide film and processing method thereof |
-
2020
- 2020-11-26 CN CN202011366780.3A patent/CN112539859B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112539859A (en) | 2021-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112539859B (en) | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof | |
| Tsai et al. | Flexible MoS2 field-effect transistors for gate-tunable piezoresistive strain sensors | |
| Yu et al. | Flexible 2D materials beyond graphene: synthesis, properties, and applications | |
| EP2290345B1 (en) | Thin-film transistor based piezoelectric strain sensor and manufacturing method | |
| Thuau et al. | Piezoelectric polymer gated OFET: Cutting-edge electro-mechanical transducer for organic MEMS-based sensors | |
| US9024395B2 (en) | Taxel-addressable matrix of vertical nanowire piezotronic transistors | |
| Yin et al. | Enhancing the sensitivity of flexible acoustic wave ultraviolet photodetector with graphene-quantum-dots decorated ZnO nanowires | |
| TW200935040A (en) | Transistor type pressure sensor and method for making the same | |
| CN108987525B (en) | MSM photoelectric detector and manufacturing method thereof | |
| US20140061590A1 (en) | Graphene device and method of manufacturing the same | |
| Werkmeister et al. | Towards flexible organic thin film transistors (OTFTs) for biosensing | |
| Wu et al. | Enhanced piezoresistive behavior of SiC nanowire by coupling with piezoelectric effect | |
| CN111693601B (en) | Surface acoustic wave humidity sensor and manufacturing method thereof | |
| CN102175363A (en) | Pressure strain device manufactured by sputtering silicon film with ion beams and method thereof | |
| JP2011242153A (en) | Strain sensor and strain measuring method | |
| CN109244132B (en) | Transistor and magnetic sensor based on magnetic piezopotential | |
| CN107389256B (en) | Electronic device for detecting pressure | |
| Lee et al. | Fabrication and characterization of roll-to-roll-coated cantilever-structured touch sensors | |
| CN110849508A (en) | Flexible pressure sensor based on discrete contact structure and preparation method thereof | |
| CN109029801A (en) | A kind of compound membrane pressure sensor of metal nanometer line and preparation method thereof | |
| Li et al. | Enhanced-sensitivity and highly flexible stress/strain sensor based on PZT nanowires-modified graphene with wide range carrier mobility | |
| KR20120031000A (en) | Alkylsilane laminate, method for producing the same, and thin-film transistor | |
| CN111537921B (en) | Cantilever beam type MEMS magnetic sensor and preparation method thereof | |
| Zhang et al. | Van der Waals materials for paper electronics | |
| Cai et al. | A Highly-Sensitive Pressure Sensor Based on Percolative Nanoparticle Arrays Formed by Dewetting Effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |