CN108088591A - A kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors - Google Patents
A kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors Download PDFInfo
- Publication number
- CN108088591A CN108088591A CN201711344589.7A CN201711344589A CN108088591A CN 108088591 A CN108088591 A CN 108088591A CN 201711344589 A CN201711344589 A CN 201711344589A CN 108088591 A CN108088591 A CN 108088591A
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- sensing element
- separating
- thin film
- high pressure
- pressure sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors, including substrate, substrate has a sensing element and electrode above with MEMS technology sputtering, and the input terminal and output terminal of sensing element connect two electrodes respectively, pastes one layer of organic insulation film on the surface of sensing element and electrode；Sensing element has the fractal structure of self similarity, is formed using copper-manganese target as sputter, and substrate uses pmma material, and organic insulation film selects polytetrafluoroethylene (PTFE) or polyimides；The present invention has the characteristics that high-precision, response are fast, output signal is big and are measured suitable for miniature scale detonation pressure, and measuring accuracy is up to 3% or so, suitable for the measurement for the hyperpressure that minute yardstick detonation in 1~50Gpa range abilities or impact generate.
Description
Technical field
The invention belongs to hyperpressure sensor technical fields, and in particular to a kind of form-separating Manganin Thin Film Ultra-high Pressure passes
Sensor.
Background technology
Copper-manganese is a kind of conventional ternary-alloy material, and main component is copper 83~87%, manganese 11~13%, nickel 2~
4%.After people in 1903 have found piezoresistive effect on the material for the first time, it is just widely used in the survey of static pressure
In amount.Until the sixties in last century, Fuller and Price, Bernstein and Keough et al. take the lead in Mn-Fe oxide application
In the test of dynamic high-pressure.Show that although the piezoresistance coefficient of manganin is not high by years of researches, since it has
It the advantages that high sensitivity, fast, linear preferable, temperature-coefficient of electrical resistance is small response, is highly suitable for making hyperpressure sensor.
Its useful range can reach tens of GPa, be the highest hyperpressure sensor of the current pressure measurement upper limit, be mainly used in it is armoring,
The national defences such as pressure measurement of nuclear weapon explosion wave, explosive detonation ripple.
With the miniaturization of weapons and ammunitions and the micromation of priming system, under miniature scale the measurement of detonation pressure have become
One it is in the urgent need to address the problem of.Miniature scale powder charge detonation wave is typical Two-dimensional Steady flowing, if Mn-Fe oxide
Sensing element length is much smaller than detonation wave wavefront curvature radius, then this detonation wave is approximately plane wave, this measuring condition ratio
More satisfactory and result is also more accurate.Current existing most of Mn-Fe oxides have larger sensing element size, they are not
Suitable for the measurement of miniature scale detonation pressure；Those Mn-Fe oxides with smaller sensing element are again with smaller resistance
Value is not suitable for the low pressure stage of measurement hyperpressure；And the substrate of some Mn-Fe oxides, using inorganic material, this can cause to use
Impedance match method generates certain error when calculating detonation pressure.
The content of the invention
The shortcomings that in order to overcome the above-mentioned prior art, the object of the present invention is to provide a kind of form-separating Mn-Co film super-pressure
Force snesor, it has the characteristics that high-precision, response are fast, output signal is big and are measured suitable for miniature scale detonation pressure.
To achieve these goals, the technical solution adopted by the present invention is：
A kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors, including substrate 2, substrate 2 is sputtered above with MEMS technology
There are sensing element 4 and electrode 1, the input terminal and output terminal of sensing element 4 connect two electrodes 1, sensing element 4 and electrode respectively
One layer of organic insulation film 3 is pasted on 1 surface；The sensing element 4 has the fractal structure of self similarity, using copper-manganese target
Material sputters, and for 4 occupied area of sensing element in diameter 0.2mm circular scopes, thickness is 1 μm.
The electrode 1 is arranged according to the lead direction of 4 input/output terminal of sensing element, if lead direction is same
Side, four electrodes 1 just arrange that, if lead direction is in both sides, four electrodes 1 are just arranged symmetrically in both sides in homonymy.
The substrate 2 uses pmma material, thickness 0.5mm.
The organic insulation film 3 selects polytetrafluoroethylene (PTFE) or polyimides, and thickness is 10~25 μm.
Beneficial effects of the present invention are：
The form-separating Manganin Thin Film Ultra-high Pressure Sensors of the present invention, the micro- of sensing element 4 is realized by MEMS technology
Type, makes that it is suitable for the measurements of miniature scale powder charge detonation pressure；Sensing element 4 employs fractal structure, can be in small face
Big resistance value is realized in product, increases the output signal of sensor, makes that it is suitable for measure the low pressure stage of hyperpressure；Substrate 2 is adopted
With pmma material so that shock wave is matched in communication process middle impedance, avoids calculation error caused by the reflection of interface；It is logical
Crossing sputtering realizes the filming of sensing element 4, can effectively improve the response time of sensor.In conclusion the form-separating manganese
Copper thin film hyperpressure sensor is with precision is high, response is fast, output signal is greatly and suitable for miniature scale Measurement of detonation pressure etc.
Feature.
Description of the drawings
Fig. 1 is the top view of the form-separating Manganin Thin Film Ultra-high Pressure Sensors of the present invention
Fig. 2 is the enlarged drawing of sensing element 4.
Fig. 3 is the side view of the form-separating Manganin Thin Film Ultra-high Pressure Sensors of the present invention.
Fig. 4 is the LD-14 detonator Detonation waveforms that the form-separating Manganin Thin Film Ultra-high Pressure Sensors of the present invention are recorded
Figure, abscissa is the time, and ordinate is voltage.
Specific embodiment
It elaborates with reference to the accompanying drawings and examples to the present invention.
With reference to Fig. 1, Fig. 2 and Fig. 3, a kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors, including substrate 2, above substrate 2
There are sensing element 4 and electrode 1 by MEMS technology sputtering, the input terminal and output terminal of sensing element 4 connect two electrodes respectively
1, one layer of organic insulation film 3 is pasted on the surface of sensing element 4 and electrode 1；The sensing element 4 has point of self similarity
Shape structure, it is formed using copper-manganese target as sputter, can be realized comprising larger resistance value in small area, and then be generated higher
Export signal so that form-separating Manganin Thin Film Ultra-high Pressure Sensors are suitble to the low pressure stage for measuring hyperpressure；4 institute of sensing element
Area is accounted in diameter 0.2mm circular scopes, the detonation pressure being suitble under measurement minute yardstick；Thickness is 1 μm, can be effectively improved point
The response time of form Manganin Thin Film Ultra-high Pressure Sensors.
The electrode 1 is arranged according to the lead direction of 4 input/output terminal of sensing element, if lead direction is same
Side, four electrodes 1 just arrange that, if lead direction is in both sides, four electrodes 1 are just arranged symmetrically in both sides, such in homonymy
Operation makes and installs convenient for form-separating Manganin Thin Film Ultra-high Pressure Sensors.
The substrate 2 uses pmma material, since impact impedance and the explosive detonation of organic glass (PMMA) produce
The impact impedance of object is close, so organic glass is commonly used for the protection medium of measurement detonation pressure sensor, using pmma material
Detonation Shock Wave can be caused to reach impedance matching in communication process, avoid the calculation error brought by impedance mismatch.
The organic insulation film 3 selects polytetrafluoroethylene (PTFE) or polyimides or other insulation performances are preferable
Organic material, thickness be 10~25 μm.
The present invention operation principle be：
Hyperpressure dynamic is carried out to the form-separating Manganin Thin Film Ultra-high Pressure Sensors of the present invention to test, test object is
Detonator, pressure are about 25.71GPa, and test device is small blasting container.The detonation wave that detonator generates after being triggered acts on quick
On sensing unit 4, form-separating Manganin Thin Film Ultra-high Pressure Sensors moment meets with a response, and records complete Detonation waveform, such as
Shown in Fig. 4, it has intactly recorded the response process of this sensor, it can be seen that this sensor has faster response.
The service life of form-separating Manganin Thin Film Ultra-high Pressure Sensors, can be in 1~50GPa range abilities in 1 μ s or so
Hyperpressure measures, and precision is 3% or so, and the response time is 20~50ns.The form-separating Mn-Co film superelevation of the present invention
Pressure sensor is mainly used for testing the pressure of shock wave or detonation wave, and such as microsize powder charge detonation pressure, light-gas gun is hit
Pressure etc..
Claims (4)
1. a kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors, including substrate (2), it is characterised in that：Substrate (2) above with
MEMS technology sputtering has sensing element (4) and electrode (1), and the input terminal and output terminal of sensing element (4) connect two electricity respectively
One layer of organic insulation film (3) is pasted on the surface of pole (1), sensing element (4) and electrode (1)；Sensing element (4) tool
There is the fractal structure of self similarity, formed using copper-manganese target as sputter, sensing element (4) occupied area is in diameter 0.2mm circle models
In enclosing, thickness is 1 μm.
2. a kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors according to claim 1, it is characterised in that：The electricity
Pole (1) is arranged according to the lead direction of sensing element (4) input/output terminal, if lead direction is in homonymy, four electrodes
(1) just arrange that, if lead direction is in both sides, four electrodes (1) are just arranged symmetrically in both sides in homonymy.
3. a kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors according to claim 1, it is characterised in that：The base
Bottom (2) uses pmma material.
4. a kind of form-separating Manganin Thin Film Ultra-high Pressure Sensors according to claim 1, it is characterised in that：Described has
Machine insulation film (3) selects polytetrafluoroethylene (PTFE) or polyimides, and thickness is 10~25 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711344589.7A CN108088591B (en) | 2017-12-15 | 2017-12-15 | Fractal type manganese copper film ultrahigh pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711344589.7A CN108088591B (en) | 2017-12-15 | 2017-12-15 | Fractal type manganese copper film ultrahigh pressure sensor |
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| Publication Number | Publication Date |
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| CN108088591A true CN108088591A (en) | 2018-05-29 |
| CN108088591B CN108088591B (en) | 2020-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711344589.7A Active CN108088591B (en) | 2017-12-15 | 2017-12-15 | Fractal type manganese copper film ultrahigh pressure sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108896235A (en) * | 2018-06-12 | 2018-11-27 | 西安交通大学 | A kind of MEMS flexibility copper-wanganese-constantan compounded super-high tension force snesor and manufacturing method |
| CN110926281A (en) * | 2019-12-19 | 2020-03-27 | 西安交通大学 | Micro-scale explosive loading detonation pressure and detonation velocity testing system based on MEMS pressure conduction probe |
| CN112539859A (en) * | 2020-11-26 | 2021-03-23 | 西安交通大学 | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof |
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| CN1303005A (en) * | 2001-02-22 | 2001-07-11 | 电子科技大学 | Thin film type superhigh-pressure Mg-Cu sensor |
| CN1595084A (en) * | 2003-09-09 | 2005-03-16 | 电子科技大学 | Multiple array copper-manganese thin film super high pressure transducer and method for making same |
| CN1789940A (en) * | 2004-12-17 | 2006-06-21 | 电子科技大学 | Compositely packaged foil type manganin superhigh pressure sensor |
| CN104406728A (en) * | 2014-11-25 | 2015-03-11 | 北京理工大学 | Manganin pressure sensor and device for measuring underwater explosion near-field impact wave pressure |
| CN105324841A (en) * | 2013-02-06 | 2016-02-10 | 伊利诺伊大学评议会 | Self-similar and fractal design for stretchable electronics |
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2017
- 2017-12-15 CN CN201711344589.7A patent/CN108088591B/en active Active
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| CN1303005A (en) * | 2001-02-22 | 2001-07-11 | 电子科技大学 | Thin film type superhigh-pressure Mg-Cu sensor |
| CN1595084A (en) * | 2003-09-09 | 2005-03-16 | 电子科技大学 | Multiple array copper-manganese thin film super high pressure transducer and method for making same |
| CN1789940A (en) * | 2004-12-17 | 2006-06-21 | 电子科技大学 | Compositely packaged foil type manganin superhigh pressure sensor |
| CN105324841A (en) * | 2013-02-06 | 2016-02-10 | 伊利诺伊大学评议会 | Self-similar and fractal design for stretchable electronics |
| CN104406728A (en) * | 2014-11-25 | 2015-03-11 | 北京理工大学 | Manganin pressure sensor and device for measuring underwater explosion near-field impact wave pressure |
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| JONATHAN A.FAN ETC.: "Fractal design concepts for stretchable electronics", 《NATURE COMMUNICATIONS》 * |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108896235A (en) * | 2018-06-12 | 2018-11-27 | 西安交通大学 | A kind of MEMS flexibility copper-wanganese-constantan compounded super-high tension force snesor and manufacturing method |
| CN110926281A (en) * | 2019-12-19 | 2020-03-27 | 西安交通大学 | Micro-scale explosive loading detonation pressure and detonation velocity testing system based on MEMS pressure conduction probe |
| CN110926281B (en) * | 2019-12-19 | 2021-02-02 | 西安交通大学 | Micro-scale explosive loading detonation pressure and detonation velocity testing system based on MEMS pressure conduction probe |
| CN112539859A (en) * | 2020-11-26 | 2021-03-23 | 西安交通大学 | Amorphous molybdenum disulfide flexible pressure sensor and preparation method thereof |
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| Publication number | Publication date |
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| CN108088591B (en) | 2020-09-01 |
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