CN108070824A - 减小光学薄膜内应力的镀膜方法 - Google Patents

减小光学薄膜内应力的镀膜方法 Download PDF

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CN108070824A
CN108070824A CN201611012072.3A CN201611012072A CN108070824A CN 108070824 A CN108070824 A CN 108070824A CN 201611012072 A CN201611012072 A CN 201611012072A CN 108070824 A CN108070824 A CN 108070824A
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film
optical thin
internal stress
thin film
plating process
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聂旭光
林喜锋
付小燕
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Shanghai Domain Photoelectric Technology Co Ltd
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Shanghai Domain Photoelectric Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供了一种减小光学薄膜内应力的镀膜方法，将SiO2或者ZrO的薄膜基片放入真空室内在275‑285℃的温度下烘烤90min，关闭烘烤，进行蒸镀。能消除薄膜内应力或者减少应力的产生，最终保证膜厚不受内应力的影响。

Description

减小光学薄膜内应力的镀膜方法
技术领域
本发明属于光学技术领域，涉及一种镀膜方法，具体涉及一种减小光学薄膜内应力的镀膜方法。
背景技术
目前，光学薄膜技术对于薄膜的物理特性都是通过光学镀膜工艺来控制的，包括抽真空、真空室加温烘烤、离子源轰击和镀膜等工艺过程，此种工艺对一般较薄物理厚度的常用氧化物薄膜厚度比较适用，但当薄膜厚度达到8000纳米以上，随着膜层层度的增加其内应力达到一定程度就会导致膜裂，之后导致脱膜现象。
随着激光技术、图像技术、红外技术等在高科技产品中的应用，对光学薄膜的性能要求、光学特性要求逐渐提高，并在同一光学系统中完成并实现光波、光信息要求，这样就导致光学薄膜厚度越来越厚，要求越来越高。如YAG1064多角度激光反射镜、多波长及激光反射系统、中红外薄膜的检测遥感技术等。因此，解决光学薄膜膜裂问题的方法也就显得较为迫切。
发明内容
针对上述技术问题，本发明提出了一种减小光学薄膜内应力的镀膜方法，能消除薄膜内应力或者减少应力的产生，最终保证膜厚不受内应力的影响。
为了实现上述发明目的，本发明采用如下技术方案：
减小光学薄膜内应力的镀膜方法，将SiO2或者ZrO的薄膜基片放入真空室内在275-285℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
本发明方法用于薄膜厚度为8000纳米以上的光学薄膜。
本发明进一步的优选方案是：膜厚度每镀制到4000纳米厚时，暂停蒸镀15-30分钟。让膜层直接产生的应力得到释放，而不能一次性镀制完成，否则膜层物理厚度太厚，就会导致膜层开裂，致使膜裂及掉膜。
本发明针对SiO2和ZrO两种特定膜料，配合工艺在抽真空过程中设置烘烤温度由传统的220℃提高到275-285℃，使基片材料内部应力进行释放，消除基片对薄膜产生的应力，然后在开蒸镀的时候关闭烘烤，这样可以让薄膜形成过程尽可能不产生新的应力，使光学薄膜达到一定8000纳米以上的物理厚度后仍不产生膜裂，保证膜厚不受内应力的影响。
具体实施例
为了便于本领域技术人员理解，下面将结合实施例对本发明做进一步的描述。
实施例１
减小光学薄膜内应力的镀膜方法，将SiO2的薄膜基片放入真空室内在275℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
实施例2
减小光学薄膜内应力的镀膜方法，将ZrO的薄膜基片放入真空室内在285℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
所述光学薄膜的厚度为8000nm以上。
实施例3
减小光学薄膜内应力的镀膜方法，将SiO2的薄膜基片放入真空室内在280℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
所述光学薄膜的厚度为8000nm以上。
膜厚度每镀制到4000纳米厚时，暂停蒸镀15分钟。
实施例4
减小光学薄膜内应力的镀膜方法，将ZrO的薄膜基片放入真空室内在276℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
所述光学薄膜的厚度为8000nm以上。
膜厚度每镀制到4000纳米厚时，暂停蒸镀30分钟。
实施例5
减小光学薄膜内应力的镀膜方法，将SiO2的薄膜基片放入真空室内在282℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
所述光学薄膜的厚度为8000nm以上。
膜厚度每镀制到4000纳米厚时，暂停蒸镀20分钟。
以上所述实施例仅表达了本发明的具体实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。

Claims (3)

1.减小光学薄膜内应力的镀膜方法，其特征在于，将SiO2或者ZrO的薄膜基片放入真空室内在275-285℃的温度下烘烤90min，关闭烘烤，进行蒸镀。
2.根据权利要求１所述的减小光学薄膜内应力的镀膜方法，其特征在于，所述光学薄膜的厚度为8000nm以上。
3.根据权利要求２所述的减小光学薄膜内应力的镀膜方法，其特征在于，膜厚度每镀制到4000纳米厚时，暂停蒸镀15-30分钟。
CN201611012072.3A 2016-11-17 2016-11-17 减小光学薄膜内应力的镀膜方法 Pending CN108070824A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109212646A (zh) * 2018-10-19 2019-01-15 苏州文迪光电科技有限公司 一种滤光片镀膜工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101209904A (zh) * 2006-12-26 2008-07-02 比亚迪股份有限公司 一种镀膜玻璃
CN103147047A (zh) * 2013-03-21 2013-06-12 上海理工大学 低紫外光学损耗的光学薄膜的制备方法
CN103233200A (zh) * 2013-03-28 2013-08-07 同济大学 一种355nm高阈值高反膜的制备方法
CN204166157U (zh) * 2014-11-14 2015-02-18 孟繁有 一种通带波段为430-450nm的带通滤光片及陈米筛选系统
CN104536064A (zh) * 2015-01-08 2015-04-22 中国科学院国家天文台南京天文光学技术研究所 光学超宽带增透膜的复合制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101209904A (zh) * 2006-12-26 2008-07-02 比亚迪股份有限公司 一种镀膜玻璃
CN103147047A (zh) * 2013-03-21 2013-06-12 上海理工大学 低紫外光学损耗的光学薄膜的制备方法
CN103233200A (zh) * 2013-03-28 2013-08-07 同济大学 一种355nm高阈值高反膜的制备方法
CN204166157U (zh) * 2014-11-14 2015-02-18 孟繁有 一种通带波段为430-450nm的带通滤光片及陈米筛选系统
CN104536064A (zh) * 2015-01-08 2015-04-22 中国科学院国家天文台南京天文光学技术研究所 光学超宽带增透膜的复合制作方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
周国宝: "光学薄膜生长过程的缺陷形成机理研究", 《中国优秀硕士学位论文全文数据库》 *
季一勤: "离子束溅射高性能SiO2薄膜特性研究", 《中国博士学位论文全文数据库》 *
毛文凡: "塑料透镜表面预处理及其镀膜工艺", 《光学技术》 *
蒋钊等: "薄膜的应力控制技术研究现状", 《真空科学与技术学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109212646A (zh) * 2018-10-19 2019-01-15 苏州文迪光电科技有限公司 一种滤光片镀膜工艺
CN109212646B (zh) * 2018-10-19 2021-09-21 苏州文迪光电科技有限公司 一种滤光片镀膜方法

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