CN108039391A - 一种氧化镓x射线探测器及其制备方法 - Google Patents
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 50
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 239000010931 gold Substances 0.000 claims description 61
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 44
- 239000010936 titanium Substances 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000002242 deionisation method Methods 0.000 claims 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 229910052732 germanium Inorganic materials 0.000 abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910004613 CdTe Inorganic materials 0.000 abstract description 2
- 229910004611 CdZnTe Inorganic materials 0.000 abstract description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
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Abstract
本发明公开了一种氧化镓X射线探测器及其制备方法，属于半导体器件制造领域。本发明要解决以硅、锗、CdTe和CdZnTe等半导体作为x射线探测器，由于材料带隙较小，对环境温度敏感、抗辐射特性弱，限制了在太空领域的应用的技术问题。本发明探测器以氧化镓单晶为基体，所述氧化镓单晶的上表面设置有接触电极和Pt/Au工作电极，下表面设置有ITO/Ti/Au工作电极，Pt/Au工作电极的顶部和ITO/Pt/Au工作电极的底部与外接电路通过连接引线连接；通过沉积制备。本发明的氧化镓x射线探测器可在室温工作，也可耐受高压，并在严苛环境下工作。
Description
技术领域
本发明属于半导体器件制造领域；具体涉及一种氧化镓X射线探测器及其制备方法。
背景技术
X射线探测器主要应用于外太空、核电站等苛刻环境中，探测器需要高灵敏度、小型化、抗辐射能力强等特性。传统气体探测器是通过气体离化产生探测信号所需能量约为30eV，对弱信号的检测灵敏度低。气体探测器密度小，体积大，不利于器件的小型化，也不利于集成为大规模阵列器件，并且不能室温工作，无法满足日益增长的应用需求。半导体x射线探测器由于带隙能量小于10eV，因此产生电子空穴对的辐射能量也小于10eV，相对气体探测器而言对弱信号检测灵敏度高，半导体单晶材料厚度在几个毫米范围内，在器件小型化方面具有优势；半导体探测器还可制成探测阵列。
发展较早的硅、锗、CdTe和CdZnTe等半导体作为x射线探测器，由于材料带隙较小，对环境温度敏感、抗辐射特性弱，限制了在太空领域的应用。
发明内容
本发明要解决以硅、锗作为x射线探测器，由于材料带隙较小，对环境温度敏感、抗辐射特性弱，限制了在太空领域的应用的技术问题；而提供了一种氧化镓X射线探测器及其制备方法。
为解决上述技术问题，本发明的一种氧化镓X射线探测器以氧化镓单晶为基体，所述氧化镓单晶的上表面设置有接触电极和Pt/Au工作电极，下表面设置有ITO/Ti/Au工作电极，Pt/Au工作电极的顶部和ITO/Ti/Au工作电极的底部与外接电路通过连接引线连接，接触电极接地；
所述接触电极和Pt/Au工作电极的横截面呈“回”字形，且Pt/Au工作电极设置在接触电极内，从下至上，接触电极和Pt/Au工作电极是由沉积在氧化镓单晶上表面的铂层和金层构成；
从上至下，ITO/Ti/Au工作电极是由依次沉积在氧化镓单晶的下表面的ITO薄膜、钛层和金层构成。
进一步地限定，所述氧化镓单晶体基体横截面为边长为2-5mm的正方形，氧化镓单晶的厚度为300～1000μm。
进一步地限定，所述Pt/Au工作电极中铂层的厚度为20～100nm，金层的厚度为200～500nm。
进一步地限定，所述ITO/Ti/Au工作电极中ITO薄膜的厚度为10～100nm，钛层的厚度为20～100nm，金层的厚度为200～500nm。
本发明中上述氧化镓X射线探测器的制备方法是按下述步骤进行的：
步骤一、在氧气气氛下，将氧化镓单晶退火，依次在丙酮、乙醇中超声处理后用去离子水冲洗，用氮气吹干；
步骤二、然后在氧化镓单晶的一侧依次沉积ITO薄膜(氧化铟锡导电薄膜)，再在真空状态下退火；
步骤三、然后在氧化镓单晶上，与ITO薄膜相对的一侧用掩膜版覆盖，再依次沉积铂层和金层，形成接触电极和Pt/Au工作电极；
步骤四、然后在ITO薄膜之上沉积钛层和金层，形成ITO/Ti/Au工作电极；
步骤五、然后在氮气保护下退火；
步骤六、将接触电极接地，将Pt/Au工作电极和ITO/Ti/Au工作电极与外接电路通过连接引线连接，即获得氧化镓X射线探测器。
进一步地限定，步骤一退火温度为700℃～1000℃，退火时间为1h～10h。
进一步地限定，步骤二退火温度为700℃～1000℃，退火时间为1h～5h。
进一步地限定，步骤二退火温度为350℃～400℃，退火时间为0.5h～2h。
本发明设置的接触电极有效地减少表面缺陷引起的漏电流。
本发明探测器的宽带隙半导体带隙更宽，热效应不明显，抗辐射特性更强，击穿电场强，其中禁带宽度达到4.9eV，击穿电场高至8MV/cm，约是SiC或GaN的2至3倍，介电常数高至10，以及电子迁移率高至300cm2/Vs，平均原子序数为17.2，较之ZnO和GaN的原子序数更大，本发明的氧化镓x射线探测器具有显著优势。
本发明制作工艺简单实用。
本发明的氧化镓x射线探测器可在室温工作，也可耐受高压，并在严苛环境下工作。
附图说明
图1是本发明所述探测器的结构示意图，图2是掩膜版的结构示意图；
图中1——Pt/Au工作电极的金层，2——铂层，3——氧化镓单晶，4——ITO薄膜，5——钛层，6——ITO/Ti/Au工作电极的金层，7——外接电路，8——外侧的方形环，9——中间正方形。
具体实施方式
具体实施方式一：结合图1进行说明，本实施方式氧化镓X射线探测器以边长为2mm的正方形，厚度为500μm的氧化镓单晶3为基体，所述氧化镓单晶3的上表面设置有接触电极和Pt/Au工作电极，下表面设置有ITO/Ti/Au工作电极，Pt/Au工作电极的顶部和ITO/Ti/Au工作电极的底部与外接电路通过连接引线连接，接触电极接地；
所述接触电极和Pt/Au工作电极的横截面呈“回”字形，且Pt/Au工作电极设置在接触电极内，从下至上，接触电极和Pt/Au工作电极是由沉积在氧化镓单晶上表面的铂层2和金层1构成；
从上至下，ITO/Ti/Au工作电极是由依次沉积在氧化镓单晶3的下表面的ITO薄膜4、钛层5和金层6构成；具体制备方法按下述步骤进行的：
步骤一、在氧气气氛、反应温度为1000℃条件下，将氧化镓单晶退火5h，先在丙酮中超声处理5min，再在乙醇中超声处理5min，尔后用去离子水冲洗，之后用氮气吹干；
步骤二、然后在氧化镓单晶的一侧依次沉积厚度为50nm的ITO薄膜4(氧化铟锡导电薄膜)，再在真空状态、反应温度为1000℃条件下退火2h；
步骤三、然后在氧化镓单晶上，与ITO薄膜相对的一侧用掩膜版覆盖，再依次沉积厚度为20nm的铂层2和厚度为200nm金层1，形成接触电极和Pt/Au工作电极；
步骤三所述Pt/Au工作电极形状为正方形，尺寸为500×500μm2，
接触电极的形状为方形环，外边长为2×2cm2，内边长为1×1cm2；
步骤四、然后在ITO薄膜4之上沉积厚度为20nm的钛层5和厚度为500nm的金层6，形成ITO/Ti/Au工作电极；
步骤五、然后在氮气保护、反应温度为400℃条件下退火2h；
步骤六、将接触电极接地，将Pt/Au工作电极和ITO/Pt/Au工作电极与外接电路7通过连接引线连接，即获得氧化镓X射线探测器。
其中，步骤三使用的所述掩膜版如图2所示，中间正方形9尺寸为500×500μm2；外侧的方形环8的外边长为2×2cm2，内边长为1×1cm2。
本实施在Pt/Au工作电极外侧设置的接触电极有效地减少表面缺陷引起的漏电流。
Claims (8)
1.一种氧化镓X射线探测器，其特征在于所述探测器以氧化镓单晶为基体，所述氧化镓单晶的上表面设置有接触电极和Pt/Au工作电极，下表面设置有ITO/Ti/Au工作电极，Pt/Au工作电极的顶部和ITO/Ti/Au工作电极的底部与外接电路通过连接引线连接，接触电极接地；
所述接触电极和Pt/Au工作电极的横截面呈“回”字形，且Pt/Au工作电极设置在接触电极内，从下至上，接触电极和Pt/Au工作电极是由沉积在氧化镓单晶上表面的铂层和金层构成；
从上至下，ITO/Ti/Au工作电极是由依次沉积在氧化镓单晶的下表面的ITO薄膜、钛层和金层构成。
2.根据权利要求1所述的一种氧化镓X射线探测器，其特征在于所述氧化镓单晶体基体横截面为边长为2-5mm的正方形，氧化镓单晶的厚度为300～1000μm。
3.根据权利要求2所述的一种氧化镓X射线探测器，其特征在于所述Pt/Au工作电极中铂层的厚度为20～100nm，金层的厚度为200～500nm。
4.根据权利要求3所述的一种氧化镓X射线探测器，其特征在于所述ITO/Ti/Au工作电极中ITO薄膜的厚度为10～100nm，钛层的厚度为20～100nm，金层的厚度为200～500nm。
5.如权利要求1-4任意一项权利要求所述的一种氧化镓X射线探测器的制备方法，其特征在于所述制备方法是按下述步骤进行的：
步骤一、在氧气气氛下，将氧化镓单晶退火，依次在丙酮、乙醇中超声处理后用去离子水冲洗，用氮气吹干；
步骤二、然后在氧化镓单晶的一侧依次沉积ITO薄膜(氧化铟锡导电薄膜)，再在真空状态下退火；
步骤三、然后在氧化镓单晶上，与ITO薄膜相对的一侧用掩膜版覆盖，再依次沉积铂层和金层，形成接触电极和Pt/Au工作电极；
步骤四、然后在ITO薄膜之上沉积钛层和金层，形成ITO/Ti/Au工作电极；
步骤五、然后在氮气保护下退火；
步骤六、将接触电极接地，将Pt/Au工作电极和ITO/Ti/Au工作电极与外接电路通过连接引线连接，即获得氧化镓X射线探测器。
6.根据权利要5所述的一种氧化镓X射线探测器的制备方法，其特征在于步骤一退火温度为700℃～1000℃，退火时间为1h～10h。
7.根据权利要5所述的一种氧化镓X射线探测器的制备方法，其特征在于步骤二退火温度为700℃～1000℃，退火时间为1h～5h。
8.根据权利要5所述的一种氧化镓X射线探测器的制备方法，其特征在于步骤五退火温度为350℃～400℃，退火时间为0.5h～2h。
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