CN108026354A - The manufacture method of heat-curable composition and piece and device - Google Patents
The manufacture method of heat-curable composition and piece and device Download PDFInfo
- Publication number
- CN108026354A CN108026354A CN201680052778.4A CN201680052778A CN108026354A CN 108026354 A CN108026354 A CN 108026354A CN 201680052778 A CN201680052778 A CN 201680052778A CN 108026354 A CN108026354 A CN 108026354A
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- heat
- curable composition
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- 239000000203 mixture Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 22
- 239000005011 phenolic resin Substances 0.000 claims abstract description 22
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 19
- 239000011256 inorganic filler Substances 0.000 claims abstract description 19
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 19
- 239000003822 epoxy resin Substances 0.000 claims description 28
- 229920000647 polyepoxide Polymers 0.000 claims description 28
- 125000003700 epoxy group Chemical group 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 15
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 238000001723 curing Methods 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 150000002924 oxiranes Chemical class 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- -1 Polyethylene terephthalate Polymers 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical class N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002493 microarray Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- URJFKQPLLWGDEI-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=[C]N1CC1=CC=CC=C1 URJFKQPLLWGDEI-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- 150000008614 2-methylimidazoles Chemical class 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical class CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N glycolonitrile Natural products N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009475 tablet pressing Methods 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
Landscapes
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
The gas enclosed between electronic unit and heat-curable composition can be reduced and can suppress the heat-curable composition and piece of the generation of current mark by providing.The method for being used for manufacturing the internal voids device few with concavo-convex pin hole current mark is provided.It is related to the heat-curable composition of the sheet comprising phenol resin, inorganic filler and silicone-based particle.It is related to the piece for including heat-curable composition.It is related to the process being configured at comprising being thermally cured property composition on electronic unit, the manufacture method for forming the process of complex and the device for the process for being thus cured heat-curable composition being heated to complex.
Description
Technical field
The present invention relates to the manufacture method of heat-curable composition, piece and device.
Background technology
It can be included by the method comprising following process with manufacture device, the method：Sheet is configured on electronic components
Heat-curable composition process；Make heat-curable composition that softening occur and utilize heat-curable composition overlay electronic portion
The process of part；With, the complex being consequently formed to the process using heat-curable composition overlay electronic component heated by
This makes the process that heat-curable composition is cured.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2006-19714 publications
The content of the invention
Problems to be solved by the invention
When using heat-curable composition overlay electronic component, gas is enclosed in electronic unit and Thermocurable sometimes
Between composition.Sometimes gas is moved and the surface of heat-curable composition after hardening produces concavo-convex, pin hole (pin
hole)。
On the other hand, the surface of heat-curable composition after hardening also produces current mark (Flow Mark) sometimes.
It is an object of the present invention to solve the above subject, there is provided can reduce in electronic unit and heat-curable composition
Between the gas enclosed and the heat-curable composition of the generation of current mark can be suppressed.In addition, it is an object of the present invention to provide
A kind of piece that can reduce the gas enclosed between electronic unit and heat-curable composition and the generation that current mark can be suppressed.
In addition, it is an object of the present invention to provide a kind of method for being used to manufacture the internal voids device few with bumps, pin hole, current mark.
The means used to solve the problem
The present invention relates to the heat-curable composition of the sheet comprising phenol resin, inorganic filler and silicone-based particle.Root
According to the heat-curable composition of the present invention, it is possible to reduce the gas enclosed between electronic unit and heat-curable composition.Or
Permitted to be because the viscosity of heat-curable composition when utilizing heat-curable composition overlay electronic component is high.According to the present invention
Heat-curable composition, can also suppress the generation of current mark.Perhaps it is because silicone-based particle suppresses the gloss on packaging body surface.
It is preferred that silicone-based particle has epoxy group.This is because the intensity of the heat-curable composition after curing can be improved.
Perhaps phenol resin is bonded with silicone-based particle, and rubber particles are fettered.
Moreover, it relates to the piece comprising heat-curable composition.Heat-curable composition its two-sided be defined as the 1st
Face and 2nd face opposed with the 1st face.The piece of the present invention also comprising the 1st distance piece being arranged on the 1st face and is arranged at the 2nd face
On the 2nd distance piece.
Moreover, it relates to the manufacture method of device.The manufacture method of the device of the invention includes being thermally cured property group
The process that compound is configured on electronic unit and the process for forming complex.Complex includes electronic unit and overlay electronic component
Heat-curable composition.The process for forming complex includes the step of softening heat-curable composition.The present invention's
The manufacture method of device also includes the process for being heated to complex and being thus cured heat-curable composition.
Brief description of the drawings
Fig. 1 is the schematic sectional view for the piece that embodiment 1 is related to.
Fig. 2 is the schematic sectional view of the manufacturing process of device.
Fig. 3 is the schematic sectional view of the manufacturing process of device.
Fig. 4 is the schematic sectional view of the manufacturing process of device.
Fig. 5 is the schematic sectional view of the process in the 1st Production Example of semiconductor device.
Fig. 6 is the schematic sectional view of the process in the 1st Production Example of semiconductor device.
Fig. 7 is the schematic sectional view of the process in the 1st Production Example of semiconductor device.
Fig. 8 is the schematic sectional view of the process in the 2nd Production Example of semiconductor device.
Fig. 9 is the schematic sectional view of the process in the 2nd Production Example of semiconductor device.
Figure 10 is the schematic sectional view of the process in the 2nd Production Example of semiconductor device.
Figure 11 is the schematic sectional view of the process in the 2nd Production Example of semiconductor device.
Embodiment
Embodiment is enumerated below, and the present invention is described in detail, and the present invention is not limited only to these embodiments.
[embodiment 1]
(piece 1)
As shown in Figure 1, piece 1 includes the heat-curable composition 11 of sheet.The two-sided of heat-curable composition 11 is defined as
1st face and 2nd face opposed with the 1st face.Piece 1 is also comprising the 1st distance piece 12 being arranged on the 1st face.As the 1st distance piece 12
Polyethylene terephthalate (PET) film etc. can be enumerated.Piece 1 is also comprising the 2nd distance piece 13 being arranged on the 2nd face.As
2nd distance piece 13 can enumerate polyethylene terephthalate (PET) film etc..
As the lower limit of the thickness of heat-curable composition 11,100 μm, 200 μm etc. can be enumerated.Combined as Thermocurable
The upper limit of the thickness of thing 11, can enumerate 2000 μm, 1500 μm etc..
The lowest melt viscosity of heat-curable composition 11 is preferably 100Pas~10000Pas.If 100Pas
More than, then there is the few trend of the gas enclosed between electronic unit and heat-curable composition 11.If 10000Pas with
Under, then have and do not produce space between electronic unit and heat-curable composition 11 in shaping, be not filled by the trend in region.
Heat-curable composition 11 includes silicone-based particle.Silicone-based particle is preferably silicone elastomer particle.
It is preferred that silicone-based particle has the group that can be reacted with least one of phenol resin or epoxy resin.As can
The group reacted with least one of phenol resin or epoxy resin, can enumerate epoxy group etc..
Being preferably shaped to for silicone-based particle is spherical.The average grain diameter of silicone-based particle is preferably less than 20 μm, more preferably
For less than 10 μm.As the lower limit of the average grain diameter of silicone-based particle, 0.5 μm, 1 μm etc. can be illustrated.
Thus weight that the gross weight that inorganic filler is subtracted from the weight of heat-curable composition 11 is obtained is set to
When 100%, the gross weight of silicone-based particle is preferably more than 0.5%, and more preferably more than 1%.Will be from heat-curable composition
When thus weight that the gross weight that 11 weight subtracts inorganic filler is obtained is 100%, the gross weight of silicone-based particle is preferred
For less than 50%, more preferably less than 45%.If more than 50%, sometimes between electronic unit and heat-curable composition 11
Remaining void, be not filled by region.
Heat-curable composition 11 is the epoxy resin of liquid included in 25 DEG C and is solid epoxy resin at 25 DEG C.It is logical
The epoxy resin coordinated 25 DEG C are liquid is crossed, can utilize and manufacture Thermocurable group using the mixing extrusion of roller kneading machine etc.
Compound 11.
Be preferably more than 100g/eq in the epoxide equivalent for the epoxy resin that 25 DEG C are in a liquid state, more preferably 120g/eq with
On.It is preferably below 500g/eq in the epoxide equivalent for the epoxy resin that 25 DEG C are in a liquid state, more preferably below 300g/eq.Epoxy
Equivalent can be measured using method specified in JIS K 7236-2009.As 25 DEG C be liquid epoxy resin, can
Enumerate bisphenol A type epoxy resin etc..
As being solid epoxy resin at 25 DEG C, epoxy resin, the epoxy of 100~180g/eq of epoxide equivalent can be enumerated
Epoxy resin of more than equivalent 200g/eq etc..Heat-curable composition 11 preferably comprises the ring of 100~180g/eq of epoxide equivalent
The epoxy resin of oxygen tree fat and more than epoxide equivalent 200g/eq.By coordinating the epoxy resin of 100~180g/eq of epoxide equivalent,
It is possible thereby to improve the glass transition temperature of the heat-curable composition after heat cure 11.As epoxide equivalent 200g/eq with
On epoxy resin, dicyclopentadiene type epoxy resin etc. can be enumerated.
Thus weight that the gross weight that inorganic filler is subtracted from the weight of heat-curable composition 11 is obtained is set to
When 100%, the gross weight of epoxy resin is preferably more than 20%.Inorganic fill will be subtracted from the weight of heat-curable composition 11
When thus weight that the gross weight of agent is obtained is set to 100%, the gross weight of epoxy resin is preferably less than 80%.
Heat-curable composition 11 includes phenol resin.As phenol resin, novolac resin, phenol aralkyl tree can be enumerated
Fat, biphenyl aralkyl resin, dicyclopentadiene type phenol resin, cresol novolac resin, resol etc..These phenol trees
Fat can be used alone, and can also share two or more.The hydroxyl equivalent of phenol resin is preferably 70~250.The softening point of phenol resin
Preferably 50~110 DEG C.
From the viewpoint of solidification reactivity, the mixing ratio of epoxy resin and phenol resin is preferably with the hydroxyl in phenol resin
Total amount coordinate relative to 1 equivalent of epoxy group in epoxy resin for the mode of 0.7~1.5 equivalent, more preferably 0.9~1.2
Equivalent.
Thus weight that the gross weight that inorganic filler is subtracted from the weight of heat-curable composition 11 is obtained is set to
When 100%, the gross weight of phenol resin is preferably more than 5%, and more preferably more than 10%.By from the weight of heat-curable composition 11
When amount subtracts thus weight that the gross weight of inorganic filler is obtained and is set to 100%, the gross weight of phenol resin be preferably 60% with
Under, more preferably less than 40%.
Heat-curable composition 11 includes inorganic filler.As inorganic filler, quartz glass, talcum, two can be enumerated
Silica, aluminium oxide, boron nitride, aluminium nitride, carborundum etc..Wherein, from the reasons why can reducing thermal coefficient of expansion well,
It is preferred that silica.From mobility it is excellent the reasons why, preferred molten silica.More preferably spheroidal fused silica.
From thermal conductivity it is high the reasons why, preferably aluminium oxide, boron nitride, aluminium nitride.Heat-curable composition 11 can be inorganic comprising a kind
Filler.Inorganic filler of more than two kinds can also be included.
The average grain diameter of inorganic filler is preferably more than 0.5 μm, more preferably more than 1 μm.The average grain diameter of filler is excellent
Elect less than 30 μm as.Average grain diameter can for example use the sample from overall arbitrary extracting, use laser diffraction and scattering formula granularity
Distribution measurement device, which is measured, to be derived there.
The content of inorganic filler in heat-curable composition 11 is more than 55 volume %, more preferably 60 volume % with
On, more preferably more than 70 volume %.By improving the content of inorganic filler, the heat cure after curing is thus enabled that
Linear expansion coefficient of the linear expansion coefficient of property composition 11 close to substrate etc..Inorganic filler in heat-curable composition 11
Content is preferably more preferably below 80 volume % below 85 volume %.If below 85 volume %, then piece is easily shaped into
Shape.
The content of inorganic filler can also be with " weight % " illustrates for unit.Typically, containing silica
Amount in terms of weight % " " to illustrate.The content of silica in heat-curable composition 11 is preferably more than 60 weight %,
More preferably more than 70 weight %, more preferably more than 80 weight %, more preferably more than 85 weight %.Heat cure
The upper limit of the content of silica in property composition 11 is, for example, 95 weight %.
The content of aluminium oxide in terms of weight % " also " to illustrate.The content of aluminium oxide in heat-curable composition 11 is excellent
Elect as more than 72 weight %, more preferably more than 80 weight %, more preferably more than 87 weight %.Heat-curable composition
The content of aluminium oxide in 11 is preferably more preferably below 93 weight % below 95 weight %.
Heat-curable composition 11 includes silane coupling agent.As silane coupling agent, 3- glycidol ether epoxides can be enumerated
Propyl trimethoxy silicane etc..
Heat-curable composition 11 includes curing accelerator.As curing accelerator, as long as making epoxy resin and phenol resin
Curing promote and be just not particularly limited, such as 2-methylimidazole (trade name can be enumerated：2MZ), 2- undecyl imidazoles (commodity
Name：C11-Z), 2- heptadecyl imidazoles (trade name：C17Z), 1,2- methylimidazoles (trade name：1.2DMZ), 2- ethyls -4-
Methylimidazole (trade name：2E4MZ), 2- phenylimidazoles (trade name：2PZ), 2- phenyl -4-methylimidazole (trade name：
2P4MZ), 1 benzyl 2 methyl imidazole (trade name：1B2MZ), 1- benzyls -2- phenylimidazole (trade names：1B2PZ), 1- cyano group
Ethyl-2-Methyl imidazoles (trade name：2MZ-CN), 1- cyano ethyls -2- undecyl imidazole (trade names：C11Z-CN), 1- cyanogen
Base ethyl -2- phenylimidazole trimellitic acid salt (trade names：2PZCNS-PW), 2,4- diaminourea -6- [2 '-methylimidazolyl -
(1 ')]-ethyl s-triazine (trade name：2MZ-A), 2,4- diaminourea -6- [2 '-undecyl imidazole base-(1 ')]-ethyl equal three
Piperazine (trade name：C11Z-A), 2,4- diaminourea -6- [2 '-ethyl -4 '-methylimidazolyl-(1 ')]-ethyl s-triazine (commodity
Name：2E4MZ-A), 2,4- diaminourea -6- [2 '-methylimidazolyl-(1 ')]-ethyl s-triazine isocyanuric acid addition product (commodity
Name：2MA-OK), 2- phenyl -4,5- bishydroxymethyl imidazoles (trade name：2PHZ-PW), 2- phenyl -4- methyl -5- methylol miaows
Azoles (trade name：The imidazoles system curing accelerator (being Shikoku Chem's system) such as 2P4MHZ-PW).Wherein, from can
To set out the reasons why suppressing the progress of the curing reaction under melting temperature, more preferably 2- phenyl -4,5- bishydroxymethyl imidazoles, 2,
4- diaminourea -6- [2 '-ethyl -4 '-methylimidazolyl-(1 ')]-ethyl s-triazine, further preferred 2- phenyl -4,5- dihydroxy
Ylmethyl imidazoles.
The content of curing accelerator is preferably 0.2 parts by weight relative to 100 parts by weight of total amount of epoxy resin and phenol resin
More than, more preferably more than 0.5 parts by weight, more preferably more than 0.8 parts by weight.The content of curing accelerator is relative to ring
100 parts by weight of total amount of oxygen tree fat and phenol resin are preferably below 5 parts by weight, more preferably below 2 parts by weight.
Heat-curable composition 11 includes carbon black.
Heat-curable composition 11 will be such as can be by comprising that will be kneaded phenol resin, inorganic filler, silicone-based particle
Obtained from the method for the mixture process that is configured to sheet manufacture.The upper limit of temperature in mixing is, for example, 140 DEG C, 130
℃.The lower limit of temperature is, for example, 30 DEG C, 50 DEG C.The time of mixing is preferably 1~30 minute.It is preferred that (decompression at reduced pressure conditions
Under atmosphere) it is kneaded.The pressure of reduced atmosphere is, for example, 1 × 10-4~0.1kg/cm2。
Component (phenol resin, inorganic filler, the silicone-based particle to form heat-curable composition 11 can also be used in
Deng) be dissolved or dispersed in solvent and prepare varnish, which is coated on supporter, coated film drying is thus manufactured thermosetting
The property changed composition 11.As solvent, methyl ethyl ketone, ethyl acetate, toluene etc. can be enumerated.
Heat-curable composition 11 can be used for sealing electronic unit.As electronic unit, can enumerate sensor,
MEMS (microelectromechanical systems, Micro Electro Mechanical Systems), SAW (surface acoustic wave, Surface
Acoustic Wave) chip, semiconductor element, capacitor, resistor etc..As sensor, pressure sensor can be enumerated, shaken
Dynamic sensor etc..As semiconductor element, semiconductor chip, IC (integrated circuit), transistor etc. can be enumerated.Thermocurable combines
Thing 11 can be used to seal semiconductor element particularly suitablely.
(manufacture method of device)
As shown in Fig. 2, the manufacture method of device includes the work that being thermally cured property composition 11 is configured on electronic unit 21
Sequence.As shown in figure 3, the manufacture method of device further includes the Thermocurable to be formed comprising electronic unit 21 and overlay electronic component 21
The process of the complex 2 of composition 11.Thus the manufacture method of device, which further includes to heat complex 2, makes Thermocurable group
The process that compound 11 is cured.
Before the process that being thermally cured property composition 11 is configured on electronic unit 21, the manufacture method of device further includes
The process that the 1st distance piece 12 is peeled off from heat-curable composition 11.
The process that being thermally cured property composition 11 is configured on electronic unit 21 is specifically：Thermocurable group will be included
The piece of compound 11 and the 2nd distance piece 13 being arranged on the 2nd face of heat-curable composition 11 is configured on electronic unit 21
Process.
The step of forming the process of complex 2 includes softening heat-curable composition 11.Combine Thermocurable
In the step of thing 11 softens, preferably more than 40 DEG C, more preferably more than 50 DEG C, be more preferably more than 60 DEG C it is right
Heat-curable composition 11 is heated.In the step of softening heat-curable composition 11, preferably 150 DEG C with
Under, more preferably less than 100 DEG C, be more preferably less than 90 DEG C heat-curable composition 11 is heated.Formed compound
The step of process of body 2 is further included using 11 overlay electronic component 21 of heat-curable composition.Utilize heat-curable composition 11
The step of overlay electronic component 21 is specifically that electronic unit 21 is embedded to heat-curable composition 11 under reduced atmosphere
Step.Reduced atmosphere is, for example, the atmosphere of 0.1kPa~5kPa, atmosphere of 0.1Pa~100Pa etc..
Make heat-curable composition 11 occur curing process in, preferably more than 100 DEG C, be more preferably 120 DEG C with
On complex 2 is heated.Make in the process that heat-curable composition 11 is cured, preferably less than 200 DEG C, it is more excellent
Less than 180 DEG C are elected as to heat complex 2.
As shown in figure 4, the complex 2 after the process that heat-curable composition 11 is cured is set to include 21 He of electronic unit
Heat-curable composition 31 after the curing of overlay electronic component 21.Make process that heat-curable composition 11 is cured it
Afterwards, the manufacture method of device includes process for forming distribution etc..
Hereinafter, an example of the manufacture method of semiconductor device is typically illustrated.
As shown in figure 5, layered product 101 includes tacked bodies 141, the Thermocurable being configured on tacked bodies 141
Composition 11 and the 2nd distance piece 13 being configured on heat-curable composition 11.Heating plate 161 and upside heating plate in downside
Layered product 101 is configured between 162.Tacked bodies 141 include support plate 142, the adhesive phase being configured in support plate 142
143 and it is fixed on the semiconductor chip 121 of adhesive phase 143.As the material of adhesive phase 143, thermally foamable can be enumerated and glued
Thermally strippable adhesive such as mixture etc..
As shown in fig. 6, heating plate 161 and upside heating plate 162 exist layered product 101 in a manner of parallel flat on the downside of use
Drop stamping is carried out under reduced atmosphere, is consequently formed chip complex 102.Chip complex 102 includes semiconductor chip 121 and covers
The heat-curable composition 11 of lid semiconductor chip 121.Chip complex 102 is contacted with adhesive phase 143.Chip complex
102 contact with the 2nd distance piece 13.
The 2nd distance piece 13 is peeled off from chip complex 102.It is cured heat-curable composition 11.To adhesive phase
143 are heated, and chip complex 102 is peeled off from adhesive phase 143.As shown in fig. 7, form distribution 171 etc..Forming distribution
After 171 grades, the cutting (dicing) of chip complex 102 is carried out.Using above step, semiconductor device is obtained.
For the manufacture method of semiconductor device, illustrate another example.
As shown in figure 8, laminate structure 201 includes installation chip 241, the Thermocurable being configured on installation chip 241
Composition 11 and the 2nd distance piece 131 being configured on heat-curable composition 11.Heating plate 261 and upside heating plate in downside
Laminate structure 201 is configured between 262.Installation chip 241 includes semiconductor wafer 242, semiconductor chip 221 and is clipped in partly
Underfill 243 between conductor chip 242 and semiconductor chip 221.Semiconductor wafer 242 has electrode.
As shown in figure 9, on the downside of use heating plate 261 and upside heating plate 262 in a manner of parallel flat to laminate structure
201 carry out drop stamping, are consequently formed chip complex 202.Chip complex 202 includes semiconductor wafer 242, semiconductor chip
221st, the underfill 243 and covering semiconductor chip 221 being clipped between semiconductor wafer 242 and semiconductor chip 221
Heat-curable composition 11.Chip complex 202 is contacted with the 2nd distance piece 13.
The 2nd distance piece 13 is peeled off from chip complex 202.It is cured heat-curable composition 11.As shown in Figure 10,
Chip complex 202 is ground.As shown in figure 11, distribution 271 etc. is formed.After the grade of distribution 271 is formed, carry out chip and answer
The cutting of zoarium 202.By above step, semiconductor device is obtained.
(variation 1)
In variation 1, heat-curable composition 11 is formed with multiple layers of sandwich construction.
Embodiment
Hereinafter, the suitable embodiments of the invention are exemplarily illustrated.It should be noted that described in the embodiment
Material, use level etc. are then not intended to the scope of the invention being only defined in this as long as no particularly limitative record.
[making of resin sheet]
Component for making resin sheet is illustrated.
Epoxy resin 1：EPPN-501HY (epoxide equivalent 162g/eq.~172g/eq. softening points of Japanese chemical drug company system
51 DEG C~57 DEG C of epoxy resin)
Epoxy resin 2：(epoxide equivalent 184g/eq.~194g/eq.'s is the jER828 of Mitsubishi Chemical Ind at 25 DEG C
The bisphenol A type epoxy resin of liquid)
Epoxy resin 3：HP7200 (epoxide equivalent 254g/eq.~264g/eq., the softening point 56 DEG C~66 of DIC company systems
DEG C dicyclopentadiene type epoxy resin)
Phenol resin：(hydroxyl equivalent 104g/eq., the phenolic aldehyde of 60 DEG C of softening point are clear by the LVR-8210DL of Qun Rong chemical companies
Paint shaped phenol resin)
Filler：The FB-9454FC (melting spherical silicon dioxide) of electrochemical industry company system
Silicone-based particle：The EP-2601 of Dong Li Dow Corning Corporations (has the spherical silicon of 2 μm of the average grain diameter of epoxy group
Ketone elastomer particle)
Carbon black：The #20 of Mitsubishi Chemical Ind
Catalyst：The 2PHZ-PW (2- phenyl -4,5- bishydroxymethyls imidazoles) of four countries' chemical conversion industry company system
Silane coupling agent：The KBM-403 (3- glycydoxies trimethoxy silane) of chemical company of SHIN-ETSU HANTOTAI
[making of resin sheet]
Record according to table 1 coordinates each component, using roller kneading machine in 60~120 DEG C of (0.01kg/ under reduced pressure
cm2) melting mixing of 10 minutes is carried out, it is prepared for mixture.Mixture is configured to sheet using tablet pressing, is thus made
For the resin sheet of thickness 1mm.
[evaluation]
Following evaluation is carried out.The results are shown in table 1.
(viscosity)
The sample for thus obtaining the circular shape of diameter 25mm by digging through resin sheet.Use determination of viscoelasticity device ARES
The melt viscosity of (Rheometrics Scientific company systems) determination sample.Specifically, the parallel of disk footpath 25mm is utilized
Disk folder holds sample, and melt viscosity is measured under 10 DEG C/min of programming rate, strain 10%, frequency 1Hz.During by 50 DEG C~150 DEG C
The minimum of melt viscosity be set to lowest melt viscosity.
(concavo-convex pin hole)
Prepare with 8 inches of minute surface chip and 150 silicon with adhesive sheet being equally spaced pasted onto on minute surface chip
" chip of microarray strip " of chip, the silicon is 500 μm of thickness, 7mm square.8 inches of diameter, thickness are cut out from resin sheet
The discoid resin of 1000 μm of degree.By discoid laminated resin in being consequently formed layered product on " chip of microarray strip ".Using flat
Plate decompressor carries out punching press to layered product, thus obtains works, and the works possesses minute surface chip, is fixed on minute surface crystalline substance
The protection resin of 700 μm of the thickness of 150 silicons with adhesive sheet of 150 silicons with adhesive sheet and covering of piece.Make
Thus make protection resin solidification when 180 DEG C small to works heating 2 with hot air circulation type drying machine.Nurse tree after hardening
The surface (surface) of fat there are the size of more than diameter 1mm bumps or more than diameter 0.5mm any one of pin hole when sentence
Be set to ×.The pin holes more than bumps and diameter 0.5mm of the size of more than diameter 1mm is determined as zero when being not present.
(internal voids are not filled by region)
Thus make protection resin solidification when 180 DEG C small to works heating 2 using hot air circulation type drying machine.For adding
Works after heat, using ultrasonic imaging apparatus (FS200II of Hitachi's Fine Tech company systems) observation internal voids and not
Filling region, i.e. inner space.Using the probe of 25MHz, observed using reflective-mode.There are the inside of more than 0.5mm
Emptying aperture and more than 0.5mm be not filled by being determined as during at least one of region ×.The emptying aperture and more than 0.5mm of more than 0.5mm
Be not filled by region there is no when be determined as zero.
(current mark)
Thus make protection resin solidification when 180 DEG C small to works heating 2 using hot air circulation type drying machine.To curing
Visually observed on the surface (surface) of protection resin afterwards.Be determined as when confirming decorative pattern ×.Sentence when decorative pattern is not confirmed
It is set to zero.
Table 1
Symbol description
1
11 heat-curable compositions
12 the 1st distance pieces
13 the 2nd distance pieces
21 electronic units
2 complexs
Heat-curable composition after 31 curings
101 layered products
141 tacked bodies
142 support plates
143 adhesive phases
121 semiconductor chips
161 downside heating plates
162 upside heating plates
102 chip complexes
171 distributions
201 laminate structures
241 installation chips
242 semiconductor wafers
243 underfills
221 semiconductor chips
261 downside heating plates
262 upside heating plates
202 chip complexs
271 distributions
Claims (8)
1. a kind of heat-curable composition of sheet, it includes phenol resin, inorganic filler and silicone-based particle.
2. heat-curable composition as claimed in claim 1, it also includes epoxy resin.
3. heat-curable composition as claimed in claim 1 or 2, wherein,
Thus the 1st weight that the gross weight that the inorganic filler is subtracted from the weight of the heat-curable composition is obtained is set
For 100% when, the gross weight of the silicone-based particle is 0.5%~50%.
4. such as heat-curable composition according to any one of claims 1 to 3, wherein,
The silicone-based particle has epoxy group.
5. such as heat-curable composition according to any one of claims 1 to 4, wherein,
Lowest melt viscosity is 100Pas~10000Pas.
6. such as heat-curable composition according to any one of claims 1 to 5, it is used to seal electronic unit.
7. a kind of piece, it includes heat-curable composition according to any one of claims 1 to 6,
The heat-curable composition its it is two-sided be defined as the 1st face and 2nd face opposed with the 1st face,
The heat-curable composition also comprising the 1st distance piece being arranged on the 1st face and is arranged on the 2nd face
The 2nd distance piece.
8. a kind of manufacture method of device, it includes：
Heat-curable composition according to any one of claims 1 to 6 is configured at process on electronic unit,
The process of complex of the formation comprising the electronic unit and the heat-curable composition for covering the electronic unit,
With
Thus the process for being cured the heat-curable composition is heated to the complex,
The process for forming complex is included the step of softening the heat-curable composition.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-189313 | 2015-09-28 | ||
| JP2015189313A JP2017066174A (en) | 2015-09-28 | 2015-09-28 | Thermosetting composition and sheet, and method for manufacturing device |
| PCT/JP2016/077116 WO2017056994A1 (en) | 2015-09-28 | 2016-09-14 | Thermosetting composition, sheet, and method for manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108026354A true CN108026354A (en) | 2018-05-11 |
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ID=58423727
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680052778.4A Pending CN108026354A (en) | 2015-09-28 | 2016-09-14 | The manufacture method of heat-curable composition and piece and device |
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| Country | Link |
|---|---|
| JP (1) | JP2017066174A (en) |
| CN (1) | CN108026354A (en) |
| SG (1) | SG11201802323SA (en) |
| TW (1) | TW201728659A (en) |
| WO (1) | WO2017056994A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013151642A (en) * | 2011-12-27 | 2013-08-08 | Hitachi Chemical Co Ltd | Liquid resin composition for electronic component, method of producing the liquid resin composition, and electronic component device |
| CN104024337A (en) * | 2011-11-15 | 2014-09-03 | 株式会社日本触媒 | Silane-containing composition, curable resin composition, and sealing material |
| WO2015079708A1 (en) * | 2013-11-29 | 2015-06-04 | ナミックス株式会社 | Epoxy resin composition, semiconductor sealing agent, and semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4753329B2 (en) * | 2001-02-14 | 2011-08-24 | 日東電工株式会社 | Thermosetting resin composition and semiconductor device |
| JP2009097014A (en) * | 2007-09-27 | 2009-05-07 | Hitachi Chem Co Ltd | Liquid resin composition for sealing, electronic component device and wafer level chip size package |
| JP2015030745A (en) * | 2013-07-31 | 2015-02-16 | 住友ベークライト株式会社 | Resin composition, semiconductor device, multilayer circuit board, and electronic component |
| JP2015137299A (en) * | 2014-01-21 | 2015-07-30 | 住友ベークライト株式会社 | Resin composition, adhesive sheet, adhesive sheet integrated with dicing tape, adhesive sheet integrated with back grind tape, adhesive sheet integrated with back grind tape also functioning as dicing tape, and electronic device |
-
2015
- 2015-09-28 JP JP2015189313A patent/JP2017066174A/en active Pending
-
2016
- 2016-09-14 CN CN201680052778.4A patent/CN108026354A/en active Pending
- 2016-09-14 WO PCT/JP2016/077116 patent/WO2017056994A1/en active Application Filing
- 2016-09-14 SG SG11201802323SA patent/SG11201802323SA/en unknown
- 2016-09-29 TW TW105131208A patent/TW201728659A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104024337A (en) * | 2011-11-15 | 2014-09-03 | 株式会社日本触媒 | Silane-containing composition, curable resin composition, and sealing material |
| JP2013151642A (en) * | 2011-12-27 | 2013-08-08 | Hitachi Chemical Co Ltd | Liquid resin composition for electronic component, method of producing the liquid resin composition, and electronic component device |
| WO2015079708A1 (en) * | 2013-11-29 | 2015-06-04 | ナミックス株式会社 | Epoxy resin composition, semiconductor sealing agent, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017056994A1 (en) | 2017-04-06 |
| TW201728659A (en) | 2017-08-16 |
| JP2017066174A (en) | 2017-04-06 |
| SG11201802323SA (en) | 2018-04-27 |
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Application publication date: 20180511 |