CN108022919A - 一种提高白光led的入bin率方法 - Google Patents

一种提高白光led的入bin率方法 Download PDF

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CN108022919A
CN108022919A CN201711063941.XA CN201711063941A CN108022919A CN 108022919 A CN108022919 A CN 108022919A CN 201711063941 A CN201711063941 A CN 201711063941A CN 108022919 A CN108022919 A CN 108022919A
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white light
bin
fluorescent glue
light leds
blue led
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刘三林
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Jiangsu Wenrun Optoelectronic Co Ltd
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Jiangsu Wenrun Optoelectronic Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Luminescent Compositions (AREA)

Abstract

本发明涉及一种提高白光LED的入BIN率方法，LED技术领域。提高白光LED的入BIN率方法步骤包括设置蓝光LED晶片与支架的正负极连接，通过荧光胶进行包裹蓝光LED晶片，采用烤箱对荧光胶进行烘烤，通过温度控制荧光胶内的荧光粉沉降速度，从而提高蓝光LED晶片的白光入bin率。本发明提供的提高白光LED的入BIN率方法，提高白光led产品入bin方法对比操作简便，产品入bin更集中的效果。

Description

一种提高白光LED的入BIN率方法
技术领域
本发明涉及一种提高白光LED的入BIN率方法，LED技术领域。
背景技术
发光二极管简称为LED。随着行业的继续发展，技术的飞跃突破，应用的大力推广，LED的光效也在不断提高，价格不断走低。新的组合式管芯的出现，也让单个LED管(模块)的功率不断提高。通过同业的不断努力研发，新型光学设计的突破，新灯种的开发，产品单一的局面也有望在进一步扭转。控制软件的改进，也使得LED照明使用更加便利。这些逐步的改变，都体现出了LED发光二极管在照明应用的前景广阔。
随着行业水平的不断发展，且产品价格的不断降低，生产出高入bin率，高客符率的白光led已经迫在眉睫。
发明内容
本发明提供了提高白光LED的入BIN率方法。
本发明采用如下技术方案：
本发明提供的一种提高白光LED的入BIN率方法，包括若干个蓝光LED晶片，若干个蓝光LED晶片布置在支架的碗杯内；采用如下步骤提高入BIN率：
1）、将若干个蓝光LED晶片设置在支架的碗杯内，通过金线键合技术使支架的正负极连接；
2）、将荧光胶包覆在蓝光LED晶片上，形成白光led；采用烘烤工艺对应荧光胶进行烘烤形成白光led；
3）、通过控制步骤2）中的温度值控制的荧光胶黏度；降低荧光胶中荧光粉的沉降速度；从而提高蓝光LED晶片的白光入bin率。
本发明所述的提高白光LED的入BIN率方法，所述的荧光胶为荧光粉与胶水组合成的溶液。
本发明所述的提高白光LED的入BIN率方法，所述的步骤3）随温度逐渐升高逐渐降低荧光胶中荧光粉的沉降速度。
本发明所述的提高白光LED的入BIN率方法，所述的烘烤工艺制程为多段烘烤，前段温度采用温度60℃-80℃对应荧光胶溶液进行烘烤1h±10min；后段采用温度150℃-160℃对荧光胶进行溶液固化4h±10min。
有益效果
本发明提供的提高白光LED的入BIN率方法，提高白光led产品入bin方法对比操作简便，产品入bin更集中的效果。
附图说明
图1是本发明的工艺设备结构示意图；
图2是本发明的黏度与温度变化曲线特征示意图。
具体实施方式
为使本发明实施例的目的和技术方案更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围：
如图所示：提高白光LED的入BIN率方法，蓝光LED晶片1设置在支架2碗杯内，通过金线键合技术使支架的正负极4连接，荧光胶3包覆在蓝光LED晶片上，通过金线键合技术使支架的正负极4连接，荧光胶3包覆在蓝光LED晶片1上，通过利用荧光胶3黏度与温度之间的特性曲线（如图2），采用烘烤工艺对应荧光胶黏度与温度之间的变化曲线，达到降低荧光粉的沉降速度，从而达到使白光产品入bin率更集中的方法。
作为本发明所述的一种提高白光led产品入BIN率的方法进一步优化方案，所用的制备白光led的方法为蓝光led+荧光胶溶液制成。
作为本发明所述的一种提高白光led产品入BIN率的方法进一步优化方案，所使用的荧光胶溶液是由荧光粉与胶水组合成的溶液，具有黏度与温度变化曲线特征。通过烘烤温度工艺对应荧光胶溶液的黏度与温度变化曲线特征，达到降低荧光粉的沉降速度，达到使白光产品入bin率更集中。烘烤工艺制程为多段烘烤，前段温度采用温度60℃-80℃对应荧光胶溶液进行烘烤1h±10min；后段采用温度150℃-160℃对荧光胶3进行溶液固化4h±10min。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。

Claims (4)

1.一种提高白光LED的入BIN率方法，包括若干个蓝光LED晶片（1），若干个蓝光LED晶片（1）布置在支架（2）的碗杯内；其特征在于：采用如下步骤提高入BIN率：
1）、将若干个蓝光LED晶片（1）设置在支架（2）的碗杯内，通过金线键合技术使支架的正负极（4）连接；
2）、将荧光胶（3）包覆在蓝光LED晶片（1）上，形成白光led；采用烘烤工艺对应荧光胶（3）进行烘烤形成白光led；
3）、通过控制步骤2）中的温度值控制的荧光胶（3）黏度；降低荧光胶（3）中荧光粉的沉降速度；从而提高蓝光LED晶片（1）的白光入bin率。
2.根据权利要求1所述的提高白光LED的入BIN率方法，其特征在于：所述的荧光胶（3）为荧光粉与胶水组合成的溶液。
3.根据权利要求1所述的提高白光LED的入BIN率方法，其特征在于：所述的步骤3）随温度逐渐升高逐渐降低荧光胶（3）中荧光粉的沉降速度。
4.根据权利要求1所述的提高白光LED的入BIN率方法，其特征在于：所述的烘烤工艺制程为多段烘烤，前段温度采用温度60℃-80℃对应荧光胶溶液进行烘烤1h±10min；后段采用温度150℃-160℃对荧光胶（3）进行溶液固化4h±10min。
CN201711063941.XA 2017-11-02 2017-11-02 一种提高白光led的入bin率方法 Pending CN108022919A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490343A (zh) * 2020-12-16 2021-03-12 鸿利智汇集团股份有限公司 一种荧光胶沉粉固化方法
CN113540315A (zh) * 2021-06-11 2021-10-22 东莞市立德达光电科技有限公司 一种植物照明led封装方法
CN113540320A (zh) * 2021-05-27 2021-10-22 东莞市立德达光电科技有限公司 一种全光谱高色品质的白光led封装方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090096347A1 (en) * 2007-10-11 2009-04-16 Xu Chao-Feng LED Flat Light and A Manufacturing Method Thereof
CN101714598A (zh) * 2009-09-25 2010-05-26 深圳莱特光电有限公司 一种白光led封装过程中荧光粉分层沉淀的方法
CN102931320A (zh) * 2012-11-13 2013-02-13 佛山市香港科技大学Led-Fpd工程技术研究开发中心 白光led近似保形封装结构及其制备方法
CN103117353A (zh) * 2013-02-01 2013-05-22 苏州君耀光电有限公司 一种荧光胶及使用荧光胶封装白光led的工艺
CN103178194A (zh) * 2011-12-23 2013-06-26 山东浪潮华光光电子股份有限公司 一种大功率白光led封装结构及其制备方法
CN103311406A (zh) * 2013-05-11 2013-09-18 东莞市中之光电科技有限公司 一种白光led的封装工艺

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090096347A1 (en) * 2007-10-11 2009-04-16 Xu Chao-Feng LED Flat Light and A Manufacturing Method Thereof
CN101714598A (zh) * 2009-09-25 2010-05-26 深圳莱特光电有限公司 一种白光led封装过程中荧光粉分层沉淀的方法
CN103178194A (zh) * 2011-12-23 2013-06-26 山东浪潮华光光电子股份有限公司 一种大功率白光led封装结构及其制备方法
CN102931320A (zh) * 2012-11-13 2013-02-13 佛山市香港科技大学Led-Fpd工程技术研究开发中心 白光led近似保形封装结构及其制备方法
CN103117353A (zh) * 2013-02-01 2013-05-22 苏州君耀光电有限公司 一种荧光胶及使用荧光胶封装白光led的工艺
CN103311406A (zh) * 2013-05-11 2013-09-18 东莞市中之光电科技有限公司 一种白光led的封装工艺

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112490343A (zh) * 2020-12-16 2021-03-12 鸿利智汇集团股份有限公司 一种荧光胶沉粉固化方法
CN112490343B (zh) * 2020-12-16 2022-09-20 鸿利智汇集团股份有限公司 一种荧光胶沉粉固化方法
CN113540320A (zh) * 2021-05-27 2021-10-22 东莞市立德达光电科技有限公司 一种全光谱高色品质的白光led封装方法
CN113540315A (zh) * 2021-06-11 2021-10-22 东莞市立德达光电科技有限公司 一种植物照明led封装方法

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