CN107994085B - 一种太赫兹探测器结构 - Google Patents
一种太赫兹探测器结构 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
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- H—ELECTRICITY
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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Abstract
本发明提供了一种太赫兹探测器结构，包括由下至上依次层叠的衬底、晶体层、非掺杂InP缓冲层、InGaAs沟道层/InAlAs势垒层和GaAs接触层；所述InGaAs沟道层和InAlAs势垒层之间形成二维电子气，以此客服了现有滤光片+探测器分立设计的结构复杂和纸杯工艺难度大的问题，降低了辐射的影响，提高噪声等效功率。
Description
技术领域
本发明涉及一种探测器结构，特别是涉及一种太赫兹探测器结构。
背景技术
目前，探测太赫兹辐射的方法主要有热辐射探测发、傅里叶变换光谱法和时域光谱法、外差式探测发，其中基于半导体材料的探测器属于窄带探测器，具有响应速度快、工艺成熟、体积小、易于集成等优点。太赫兹辐射属于微弱信号，易受到辐射的影响，目前的太赫兹探测器一般采用滤光片和探测器分立方式，以降低背景辐射的影响，这种分立式存在结构复杂和制备工艺难度大的缺点。
发明内容
为实现上述技术目的，达到上述技术效果，本发明通过以下技术方案实现：一种太赫兹探测器结构，其特征在于，包括：包括由下至上依次层叠的衬底、晶体层、非掺杂InP缓冲层、InGaAs沟道层/InAlAs势垒层和GaAs接触层、；所述InGaAs沟道层和InAlAs势垒层之间形成二维电子气；
所述探测器顶部开设电极孔，电极孔深度从所述接触层顶部延伸到势垒层内部，电极孔内放置第一电极，电极顶端设置外侧探测延伸装置；
所述晶体层和缓冲层两端开设电极孔，电极孔深度从沟道层延伸至衬底，电极孔内放置第二电极，所述第二电极接地。
优选地，所述所述第一电极金属为Ni/Ge/Au/Ge/Ni/Au的多层金属，第二电极金属为Ti/Pt/Au多层金属。
优选地，所述衬底为InP衬底、Si衬底、SiC衬底或蓝宝石衬底中的一种。
优选地，InGaAs沟道层厚度为用于在低场下为二维电子气提供导电沟道。
优选地，所述网状阳极为变长为5厘米的若干菱形金属格组成的金属网，其前后两端链接有恒电位仪将交流电转换成直流电，由参比电极确定电流输出。
区别于现有技术的情况，本发明的有益效果是：
客服了现有滤光片+探测器分立设计的结构复杂和纸杯工艺难度大的问题，降低了背景辐射的影响，提高噪声等效功率。
附图说明
图1是本发明实施例太赫兹探测器结构的剖面图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1是本发明实施例太赫兹探测器结构，包括：包括由下至上依次层叠的衬底1、晶体层2、非掺杂InP缓冲层4、InGaAs沟道层5、InAlAs势垒层6和GaAs接触层7；所述InGaAs沟道层5和InAlAs势垒层6之间形成二维电子气10；
所述探测器顶部开设电极孔，电极孔深度从所述接触层顶部延伸到势垒层内部，电极孔内放置第一电极8，电极顶端设置外侧探测延伸装置9；
所述晶体层和缓冲层两端开设电极孔，电极孔深度从沟道层延伸至衬底，电极孔内放置第二电极3，所述第二电极接地。
具体的，所述所述第一电极金属为Ni/Ge/Au/Ge/Ni/Au的多层金属，第二电极金属为Ti/Pt/Au多层金属。
所述衬底为InP衬底、Si衬底、SiC衬底或蓝宝石衬底中的一种。
InGaAs沟道层厚度为用于在低场下为二维电子气提供导电沟道。
以一个是实施例为例，本实施例中，所述阳极金属采用Mg金属，在本实施例中，由于阳极金属Mg底部与钢管表面相连接，Mg金属较钢管所采用的Fe相对活泼，因此连接之后依靠电位负于保护对象金属自身消耗来提供保护电流，钢管与牺牲阳极连接，在电解质环境中构成了保护电流回路。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或简介运用在其他相关技术领域，均同理包括在本发明的专利保护范围内。
Claims (4)
1.一种太赫兹探测器结构，其特征在于，包括：包括由下至上依次层叠的衬底、晶体层、非掺杂 InP 缓冲层、InGaAs 沟道层/InAlAs 势垒层和 GaAs 接触层、；所述 InGaAs 沟道层和 InAlAs 势垒层之间形成二维电子气；
所述探测器顶部开设第一电极孔，电极孔深度从所述接触层顶部延伸到势垒层内部，电极孔内放置第一电极，电极顶端设置外侧探测延伸装置；
所述晶体层和缓冲层两端开设第二电极孔，电极孔深度从沟道层延伸至衬底，电极孔内放置第二电极，所述第二电极接地。
2.根据权利要求 1 所述的太赫兹探测器结构，其特征在于：所述第一电极金属为 Ni/Ge/Au/Ge/Ni/Au 的多层金属，第二电极金属为Ti/Pt/Au 多层金属。
3.根据权利要求 1 所述的太赫兹探测器结构，其特征在于：所述衬底为 InP 衬底、Si衬底、SiC 衬底或蓝宝石衬底中的一种。
4.根据权利要求 1 所述的太赫兹探测器结构，其特征在于：InGaAs沟道层厚度为 100～190Å，用于在低场下为二维电子气提供导电沟道。
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