CN107968074A - A kind of GaN base electronic device - Google Patents
A kind of GaN base electronic device Download PDFInfo
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- CN107968074A CN107968074A CN201610907624.0A CN201610907624A CN107968074A CN 107968074 A CN107968074 A CN 107968074A CN 201610907624 A CN201610907624 A CN 201610907624A CN 107968074 A CN107968074 A CN 107968074A
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- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 238000004806 packaging method and process Methods 0.000 claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 75
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims description 20
- 238000010276 construction Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000013517 stratification Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000012856 packing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 75
- 229910002601 GaN Inorganic materials 0.000 description 72
- 239000011777 magnesium Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The invention discloses a kind of GaN base electronic device, including a GaN base thin-film LED, a heat-radiating substrate and a packaging body, wherein, GaN base thin-film LED includes：Epitaxial structure, is followed successively by from top to bottom：Conductive substrate layer, conductive buffer layer, n-layer, p-type layer and electronics provide layer；It is divided into the source electrode and drain electrode that conductive substrate layer side and electronics in epitaxial structure provide layer side；And the gate electrode being connected with n-layer；GaN base thin-film LED is installed on heat-radiating substrate surface, packaging body wraps up GaN base thin-film LED and heat-radiating substrate, and the source electrode in GaN base thin-film LED, drain electrode and gate electrode are picked out by lead to obtain GaN base electronic device, so as to improve the packing density of electronic device, it is low to manufacture cost at the same time, it is cost-effective, and avoid integrity problem caused by wire dropping device.
Description
Technical field
The present invention relates to electronic device manufacturing field, and in particular to a kind of GaN base electronic device.
Background technology
Gallium nitride (GaN) has larger direct band gap (3.4ev), high heat conductance, high electronics saturation drift velocity
The features such as, therefore have become the research hotspot of current technical field of semiconductors.Using this feature make semiconductor devices such as
High electron mobility transistor (HEMT, High Electron Mobility Transistor) has that breakdown electric field is big, electric current
The features such as density is high, electronics saturation drift velocity is fast, is very suitable for making high temperature, high frequency, high pressure and powerful device, can
For frequency microwave field and power power electronic field, such as the information such as radio communication base station, power power electronic device
The fields such as transmitting-receiving, energy conversion.
GaN base electronic device is often operated in when high pressure, high current, and during the work time, the temperature of chip is non-
Chang Gao, and the semiconductor device characteristic to work under high temperature is deteriorated, lifetime.So good heat dissipation for chip high efficiency,
High reliability, high stability are extremely important.
At present, GaN base electronic device generally connects chip electrode and substrate using lead, what substrate was connected with packaging body again
Mode is packaged, and encapsulation volume is big, easily goes offline, and thermal diffusivity is bad.
The content of the invention
For problem present in existing GaN base electronics technologies, the present invention provides a kind of GaN base electronic device,
Effectively solve the problems such as existing GaN base electronic device voltage is low, size is big, device making technics are complicated, packaging body weak heat-dissipating.
The present invention's is achieved through the following technical solutions：
A kind of GaN base electronic device, including a GaN base thin-film LED, a heat-radiating substrate and a packaging body, its
In,
The GaN base thin-film LED includes：
Epitaxial structure, is followed successively by from top to bottom：Conductive substrate layer, conductive buffer layer, n-layer, p-type layer and electronics provide
Layer；
It is divided into the source electrode and drain electrode that conductive substrate layer side and electronics in epitaxial structure provide layer side；
And the gate electrode being connected with n-layer；
The GaN base thin-film LED is installed on the heat-radiating substrate surface, and the packaging body wraps up the GaN base and hangs down
Straight fabric chip and heat-radiating substrate, and the source electrode in GaN base thin-film LED, drain electrode and gate electrode are connect by lead
Go out to obtain the GaN base electronic device.
It is further preferred that the conductive substrate layer is AlN substrates or Si substrates or SiC substrate or GaN substrate or ZnO linings
Bottom；
And/or the conductive buffer layer is the one or more in AlN, GaN, AlGaN, AlInN and AlInGaN
Combination.
It is further preferred that the conductive buffer layer is sandwich construction or single layer structure.
It is further preferred that the n-layer is the one or more in N-shaped GaN, AlGaN, AlInN and AlInGaN
Combination；And/or
The p-type layer is one or more kinds of combinations in p-type GaN, AlGaN, AlInN and AlInGaN.
It is further preferred that it is N-shaped GaN, AlGaN, AlInN, AlInGaN and AlGaN/GaN that the electronics, which provides layer,
One or more kinds of combinations in hetero-junctions.
It is further preferred that drain electrode is arranged on conductive substrate layer side in epitaxial structure, source electrode is arranged in epitaxial structure
Electronics provides layer side；Or, source electrode is arranged on conductive substrate layer side in epitaxial structure, drain electrode is arranged on electronics in epitaxial structure
Layer side is provided.
It is further preferred that p-type layer and electronics offer layer include at least one through hole, the grid in the epitaxial structure
Electrode is connected to n-layer by the through hole.
It is further preferred that further include passivation layer in the GaN base thin-film LED, gate electrode and same therewith is arranged at
Between the source electrode of side, or it is arranged between gate electrode and the therewith drain electrode of homonymy.
It is further preferred that the packaging body includes encapsulated member and metal pad, wherein,
The encapsulated member wraps up the GaN base thin-film LED and heat-radiating substrate；
The metal pad is used to weld the GaN base thin-film LED.
It is further preferred that the metal pad is soldered ball or salient point or metal strip, the metal pad can be welded with finger-like
Disk or interdigitated pad.
The beneficial effects of the invention are as follows：Compared with traditional die and encapsulating structure, inside of electronic component in the present invention
Using thin-film LED, in encapsulation process, the metal pad in chip and packaging body is directly by metal layer with eutectic
Mode links together, and avoids using conducting wire and substrate so that electronic device it is small, it is light-weight, so as to improve electricity
The packing density of sub- device, while it is low to manufacture cost, it is cost-effective, and avoid reliability caused by wire dropping device from asking
Topic.
Further, since without using conducting wire, the interconnection length between internal thin-film LED and package casing wiring is short
Very much, thus parasitic parameter it is small, signal transmission delay time is short, be conducive to improve circuit high frequency performance, particularly suitable for GaN
The encapsulation of base high-frequency element.
It is further more, straight by the good metal of thermal diffusivity between metal pad in the present invention in thin-film LED and packaging body
Connect in succession, thermal diffusivity is more preferable, while device active region be connected directly mainly close to upper surface, chip upper surface and packaging body so that
Heat caused by chip operation can be transmitted quickly so that the heat dissipation performance of electronic device increases substantially, and then electronics
Work efficiency, stability, reliability and the service life of device can increase substantially.
Brief description of the drawings
GaN base thin-film LED schematic diagram in Fig. 1 present invention；
GaN base electronic device schematic diagram in Fig. 2 present invention.
Marked in figure：31- conductive substrates, 32- conductive buffer layers, 33-n type layers, 34-p type layers, 35- electronics provide layer,
36- source electrodes；37- gate electrodes；38- passivation layers；39- drain electrodes, 1- conductive substrates, 2- epitaxial layers, the grid of 3- devices, leakage, source
Pole metal layer, 4 metal pads, 5 package bodies.
Embodiment
In order to further illustrate the present invention, the embodiment of the present invention is described in detail below in conjunction with attached drawing, is provided
Some embodiments.But content according to the present invention is not limited only to these embodiments.It is all disclosed in this specification
Feature, or disclosed all methods or during the step of, can be with addition to mutually exclusive feature and/or step
Any mode combines.
It is as shown in Figure 1 GaN base thin-film LED schematic diagram provided by the invention, it can be seen from the figure that in the GaN
Based vertical structure chip includes：Epitaxial structure, is divided into conductive substrate layer side and electronics in epitaxial structure and provides layer side
Source electrode 36 and drain electrode 39 and the gate electrode 37 that is connected with n-layer, wherein, be followed successively by the epitaxial structure：It is conductive
Substrate layer 31, conductive buffer layer 32, n-layer 33, p-type layer 34 and electronics provide layer 35.In addition, in GaN base thin-film LED
Passivation layer 38 is further included, it is arranged between gate electrode and the therewith source electrode of homonymy, or is arranged at gate electrode and therewith homonymy
Between drain electrode.
It is illustrated in figure 2 GaN base electronic device schematic diagram provided by the invention, including GaN base vertical junction as shown in Figure 1
Outside structure chip, a heat-radiating substrate and packaging body are further included, wherein, GaN base thin-film LED is installed on heat-radiating substrate surface,
Package body wraps up GaN base thin-film LED and heat-radiating substrate, and by the source electrode in GaN base thin-film LED, drain electrode
And gate electrode picks out to obtain three end GaN base electronic devices by lead.Wherein, 1 is conductive substrates, and 2 be epitaxial structure, and 3 be device
The grid of part, leakage, source metal, 4 be metal pad, and 5 be packaging body.
Embodiment 1：
The GaN base thin-film LED provided in the present embodiment includes：Low-resistance Si substrate layers 1, successively in Si substrate layers 1
Si doping AlN/AlGaN/GaN sandwich constructions cushion, the high-quality GaN layer of Si doping, the p-type GaN of Mg doping of upper growth
(specific this is made jointly undoped with GaN channel layers and aluminum gallium nitride barrier layer for layer, undoped GaN channel layers and aluminum gallium nitride barrier layer
With offer electronics).The GaN base electronic device is included outside above-mentioned GaN base thin-film LED, further includes：TiAlNiAu is closed
The source/drain electrode Ohmic contact of gold, the gate electrode of NiAu alloys, make on source electrode, drain electrode and gate electrode respectively
The AuSn alloying metal bonding layers of work, and packaging body；Wherein, using eutectic machine by bonding layer GaN base vertical stratification core
Metal pad in piece and packaging body is combined together.
Specifically, GaN base electronic device described above, comprises the following steps obtained：
Step A1, using MOCVD, (Metal Organic Chemical Vapor Deposition, Organometallic close
Thing chemical gaseous phase deposition) method, grow the AlN/AlGaN/GaN multilayer knots that Si is adulterated successively from bottom to top on low-resistance Si substrates
Structure cushion, the n-type GaN layer of Si doping, the p-type GaN layer of Mg doping, undoped GaN channel layers and AlGaN potential barrier, its
In, using high-purity N2Or use high-purity H2Or use high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources,
Metal organic source trimethyl gallium (TMGa) is used as gallium source, and trimethyl aluminium (TMAl) is used as silicon source, and n-type dopant is silane
(SiH4), p-type dopant is two luxuriant magnesium (Cp2) and ferrocene (Cp Mg2Fe)。
Step A2, using ICP (Iinductively Coupled Plasma, inductively coupled plasma) or RIE
(Reactive Ion Etching, reactive ion etching) dry etching prepares active area；Using TiAlNiAu alloys in low-resistance
Si substrates side prepares source electrode Ohmic contact and prepares drain-electrode ohmic contacts in AlGaN potential barrier side, grows SiN afterwards
Medium isolates electrode, and protects the current collapse on surface reduction surface；The p-type GaN layer finally adulterated in Mg using etch process,
Undoped with least one through hole is etched in GaN channel layers and AlGaN potential barrier, NiAu alloy systems are filled in the through hole
Standby gate electrode.
Step A3, is deposited one layer of Sn or AuSn alloy-layer as bonding on gate electrode, drain electrode and source electrode layer
Layer, for bonding；
Step A4, above the finger-like metal pad that GaN base thin-film LED is welded in packaging body using eutectic machine.
Step A5, encapsulates GaN base thin-film LED using sealing machine.
It is known that the problem of device for high-power power electronic is maximum is exactly to radiate, in the present embodiment, by grid electricity
The company that one layer of Sn or Au-Sn metal material realizes thin-film LED and encapsulated member is crossed on pole, drain electrode and source electrode layer
Fetch reduction thermal resistance so that the heat conduction of electronic device is more preferable, and the efficiency and stability of electronic device are improved with this, and being particularly suitable for should
For power-type electronic device and high-frequency electron device.
Embodiment 2
The GaN base thin-film LED provided in the present embodiment includes：GaN substrate, grows in GaN substrate successively
Si doping AlN/AlGaN/GaN sandwich constructions cushion, the high-quality GaN layer of Si doping, the p-type GaN layer, undoped of Mg doping
GaN channel layers and aluminum gallium nitride barrier layer.The GaN base electronic device is included outside above-mentioned GaN base thin-film LED, also wraps
Include：The source/drain electrode Ohmic contact of TiAlNiAu alloys, the gate electrode of NiAu alloys, respectively source electrode, drain electrode with
And the AuSn alloying metal bonding layers made on gate electrode, and packaging body；Wherein, using eutectic machine by bonding layer GaN
Metal pad in based vertical structure chip and packaging body is combined together.
Specifically, GaN electronic devices described above, comprise the following steps obtained：
Step A1, using MOCVD, (Metal Organic Chemical Vapor Deposition, Organometallic close
Thing chemical gaseous phase deposition) method, grow the AlN/AlGaN/GaN sandwich constructions that Si is adulterated successively from bottom to top in GaN substrate
Cushion, the n-type GaN layer of Si doping, the p-type GaN layer of Mg doping, undoped GaN channel layers and AlGaN potential barrier, wherein,
Using high-purity N2Or use high-purity H2Or use high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N sources, gold
Belong to organic source trimethyl gallium (TMGa) and be used as gallium source, trimethyl aluminium (TMAl) is used as silicon source, and n-type dopant is silane (SiH4), p
Type dopant is two luxuriant magnesium (Cp2) and ferrocene (Cp Mg2Fe)。
Step A2, using ICP (Iinductively Coupled Plasma, inductively coupled plasma) or RIE
(Reactive Ion Etching, reactive ion etching) dry etching prepares active area；Using TiAlNiAu alloys in low-resistance
Si substrates side prepares drain-electrode ohmic contacts and prepares source electrode Ohmic contact in AlGaN potential barrier side, grows SiN afterwards
Medium isolates electrode, and protects the current collapse on surface reduction surface；The p-type GaN layer finally adulterated in Mg using etch process,
Undoped with least one through hole is etched in GaN channel layers and AlGaN potential barrier, NiAu alloy systems are filled in the through hole
Standby gate electrode.
Step A3, is deposited one layer of Sn or AuSn alloy-layer as bonding on gate electrode, drain electrode and source electrode layer
Layer, for bonding；
Step A4, above the finger-like metal pad that GaN base thin-film LED is welded in packaging body using eutectic machine.
Step A5, encapsulates GaN base thin-film LED using sealing machine.
Above-described embodiment only listing property illustrates the technological thought and feature of the present invention, is not intended to limit the invention, for
For those skilled in the art, the present invention can have various changes and change.Therefore it is all according to disclosed spiritual institute
The equal change or modification made, should cover in protection scope of the present invention.
Claims (10)
1. a kind of GaN base electronic device, it is characterised in that the GaN base electronic device includes a GaN base vertical stratification core
Piece, a heat-radiating substrate and a packaging body, wherein,
The GaN base thin-film LED includes：
Epitaxial structure, is followed successively by from top to bottom：Conductive substrate layer, conductive buffer layer, n-layer, p-type layer and electronics provide layer；
It is divided into the source electrode and drain electrode that conductive substrate layer side and electronics in epitaxial structure provide layer side；
And the gate electrode being connected with n-layer；
The GaN base thin-film LED is installed on the heat-radiating substrate surface, and the packaging body wraps up the GaN base vertical junction
Structure chip and heat-radiating substrate, and the source electrode in GaN base thin-film LED, drain electrode and gate electrode are picked out by lead
To the GaN base electronic device.
2. GaN base electronic device as claimed in claim 1, it is characterised in that
The conductive substrate layer is AlN substrates or Si substrates or SiC substrate or GaN substrate or ZnO substrates；
And/or the conductive buffer layer is one or more kinds of combinations in AlN, GaN, AlGaN, AlInN and AlInGaN.
3. GaN base electronic device as claimed in claim 2, it is characterised in that the conductive buffer layer is sandwich construction or list
Rotating fields.
4. GaN base electronic device as claimed in claim 1, it is characterised in that
The n-layer is one or more kinds of combinations in N-shaped GaN, AlGaN, AlInN and AlInGaN；And/or
The p-type layer is one or more kinds of combinations in p-type GaN, AlGaN, AlInN and AlInGaN.
5. GaN base electronic device as claimed in claim 1, it is characterised in that the electronics provide layer for N-shaped GaN, AlGaN,
One or more kinds of combinations in AlInN, AlInGaN and AlGaN/GaN hetero-junctions.
6. the GaN base electronic device as described in claim 1-5 any one, it is characterised in that drain electrode is arranged on epitaxial structure
Middle conductive substrate layer side, source electrode are arranged on electronics in epitaxial structure and provide layer side；Or, source electrode is arranged in epitaxial structure and leads
Electric substrate layer side, drain electrode are arranged on electronics in epitaxial structure and provide layer side.
7. the GaN base electronic device as described in claim 1-5 any one, it is characterised in that p-type layer in the epitaxial structure
There is provided layer with electronics includes at least one through hole, and the gate electrode is connected to n-layer by the through hole.
8. GaN base electronic device as claimed in claim 6, it is characterised in that further included in the GaN base thin-film LED
Passivation layer, is arranged between gate electrode and the therewith source electrode of homonymy, or be arranged at gate electrode and therewith the drain electrode of homonymy it
Between.
9. the GaN base electronic device as described in claim 1-5 any one, it is characterised in that the packaging body includes
Body and metal pad are sealed, wherein,
The encapsulated member wraps up the GaN base thin-film LED and heat-radiating substrate；
The metal pad is used to weld the GaN base thin-film LED.
10. GaN base electronic device as claimed in claim 6, it is characterised in that the metal pad is soldered ball or salient point or gold
Belong to bar, the metal pad can be with finger-like pad or interdigitated pad.
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| CN201610907624.0A CN107968074A (en) | 2016-10-19 | 2016-10-19 | A kind of GaN base electronic device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349920A (en) * | 2019-06-27 | 2019-10-18 | 深圳第三代半导体研究院 | A kind of diode chip package structure and its packaging method |
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