CN107958940A - A kind of N-type carborundum Schottky diode structure of resistance to breakdown - Google Patents
A kind of N-type carborundum Schottky diode structure of resistance to breakdown Download PDFInfo
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- CN107958940A CN107958940A CN201610907476.2A CN201610907476A CN107958940A CN 107958940 A CN107958940 A CN 107958940A CN 201610907476 A CN201610907476 A CN 201610907476A CN 107958940 A CN107958940 A CN 107958940A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The present invention relates to a kind of N-type carborundum Schottky diode structure of resistance to breakdown, including following characteristics：The surface of SiC schottky diode is made of active area and termination environment, an at least p type island region domain in N-type SiC schottky diode active area, this p type island region domain is extended under surface from semiconductor epitaxial layer surface, depth is more than 0.1 micron, at least part of on this p type island region field surface is to have the wide p type semiconductor layer for being less than 1.5 electron volts of one layer of forbidden band, anode metal and the wide contact portion for being less than 1.5 electron volts P-type layers of this forbidden band are for the Ohmic contact of metal/p type island region or close to Ohmic contact, contact with silicon carbide N-type region domain is Schottky contacts, schottky metal pole (anode) through this p type island region domain can allow device effectively connect away breakdown when caused electron hole pair in hole so that device is safely used.
Description
Technical field
The present invention relates to a kind of structure of N-type sic semiconductor device, more particularly to a kind of N-type carborundum
The new construction of resistance to breakdown Schottky diode.
Background technology
Mostly can only operate in less than 250 DEG C using the traditional integrated circuit of silicon device, it is impossible to meet high temperature, high power and
The requirement such as high frequency.In the middle, novel semiconductor material carborundum (SiC) is most gazed at and studied by people.
There is manufacturing silicon carbide semiconductor material broad-band gap, high saturation drift velocity, high heat conductance, high critical breakdown electric field etc. to dash forward
Go out advantage, be particularly suitable for making high-power, high pressure, high temperature, Flouride-resistani acid phesphatase electronic device.
Wide (210eV≤the E of carborundum energy gapg≤ 710eV), leakage current several orders of magnitude smaller than silicon.Moreover, carborundum
Heat endurance is fabulous, and for intrinsic temperature up to more than 800 DEG C, it ensure that the long-term reliability in hot operation.Pass through analysis
The figure of merit, such as the Johnson figures of merit, (JFOM- reflects the height of corresponding device by the breakdown electric field of material, saturated electron drift velocity
Power, high-frequency performance), (KFOM- is anti-by the thermal conductivity, saturated electron drift velocity and dielectric constant of material for the Keyes figures of merit
The switching speed and heat for reflecting corresponding device limit) and the hot figure of merit (breakdown electric field, breakdown electric field and thermal conductivity that QFOM- passes through material
Rate reflects the heat dissipation performance of corresponding device), it is found that these figures of merit of carborundum SiC are all higher than existing frequently-used semi-conducting material
It very much, is a kind of ideal material realized with reference to high temperature and high-frequency high-power to go out.
Carborundum breakdown electric field is higher, is 8 times of silicon materials, this is very key to power device.Conducting resistance is with hitting
Cube being inversely proportional for electric field is worn, so the conducting resistance of carborundum SiC power devices only has the hundred to 21 percent of silicon device,
The significant energy consumption for reducing electronic equipment.Therefore, carborundum SiC power devices are also known as driving " the green of " new energy revolution "
The energy " device.Power device manufactured by carborundum SiC out has low than conducting resistance, senior engineer's working frequency and high temperature work
The advantages of making stability, possesses very wide application prospect.
With the successive commercialization of 6H, 4H-SiC body material, carborundum SiC device technique, such as oxidation, doping, etching and
Metal, semiconductor contact, all increasingly ripe, these lay a good foundation for the development and application of carborundum SiC device.
600V and 1200V N-type SiC schottky diodes are the silicon carbide devices of earliest commercialization, general carbonization
The device architecture of silicon N-type Schottky diode as shown in Figure 1, the composition of this structure can be mainly divided into active area and termination environment,
Active area is connected by Schottky metal contact and PN Jie And, and termination environment is made of field limiting ring.Because the conducting voltage of carborundum PN junction
Generally higher than 3V and the conducting voltage of Schottky metal contact is 1V or so, when forward conduction voltage is less than 3V, conducting electric current
Mainly electronic current flows through Schottky barrier from the anode of substrate and enters surface anode electrode, so being single carrier device
Part.When device is in reverse bias, electronics is attempted to enter in manufacturing silicon carbide semiconductor from surface crosses Schottky barrier, one
As reverse bias when being not very big, surface electrode Inner only have very small a part of electronic energy obtain enough energy crosses potential barriers into
Enter in manufacturing silicon carbide semiconductor and form some of reverse leakage current, when reverse-biased larger, the consumption of the p-type doped region in active area
Layer can be connected to the greatest extent has shielded Come the Schottky metal contact on surface so that the electronics in surface electrode is more difficult to enter carbonization
It is nonconducting in addition to leakage current, so Schottky so that when SiC schottky diode is reverse in silicon semiconductor
Diode is become as one way conducting device.P-type doped region will be formed in silicon carbide body Inner by forming the device architecture of Fig. 1.
Bond strength based on carborundum SiC is high, and the temperature (1800 DEG C of ＞) required by impurity diffusion, substantially exceeds normal component technique
Condition, so the doping in device making technics cannot use diffusion technique, can only utilize extension control doping and High temperature ion
Injection doping.
Epi dopant can utilize silicon carbide source gas flow to change, and make doping concentration control from being lightly doped (1014/cm3)
(＞ 10 is adulterated to degeneracy19/cm3) scope.Silane, propane are the typical epitaxial gas sources of carborundum SiC.6H-SiC is in silicon
(Si) the typical growth rate of homoepitaxy is 3 μm/h in the N-type substrate of face.In growth response room, by adjusting gas source
Ratio to compete extension into row position, impurity is located at lattice position.Growth on the substrate of carbon (C) face is then different, but to it
Growth mechanism there is no deep understanding.
Because diffusion technique cannot be used to adulterate, ion implantation technology is extremely important in element manufacturing.Aluminium (Al) and boron
(B) it is typical p-type doped chemical, produces relatively deep acceptor level (being respectively 211meV and 300meV), the ionization energy of Al
Ionization energy less than B, the activationary temperature of Al requirements are lower than B；And B atomic ratio Al atoms are light, damage is less caused by injection, and notes
It is deeper to enter scope, injection element should be selected according to device technology requirement.
But it when ion implantation silicon carbide is excessive, can be led to lattice damage, form decrystallized structure, substantially reduce
The original performance of carborundum.In order to which caused lattice damage and decrystallized structure occur when reducing injection ion, injection from
The period of the day from 11 p.m. to 1 a.m need to add high temperature to substrate, and about 650 DEG C are needed when generally being injected to N, about 700~800 DEG C are needed when being injected to Al.Note
After entering, it is also necessary to be heat-treated (1300 DEG C of ＞) by high annealing, the ion-activated of injection, drawn when injecting ion with season
The lattice damage risen restores.Since the bond strength of SiC is high, it is necessary to could produce lattice vacancy at high temperature, Doped ions are allowed
Insert, activated.1300 DEG C of annealing temperature of document report obtains being less than 10% activity ratio；When temperature is more than 1600 DEG C,
Activity ratio just can be more than 95%.
When temperature is more than 1300 DEG C, the Si in SiC can be evaporated, and device wafers surface can also be roughened, and make device imitate
It can reduce.Existing technique is as protection, Ran Houcai in wafer top surface depositing silicon silicon (SiC) or graphite (C) layer
Annealing heat-treats are carried out, graphite linings are disposed after annealing, it is crucial step to form high concentration p-type doped region, and very
The step of increasing cost, if the p type island region that fruit metal can be dense with not being doping forms good contact, that does not just have to p type island region
It is doped dense, this can be greatly lowered cost of manufacture.
By taking simple SiC schottky diode as an example, wherein in silicon carbide epitaxy layer surface up to a rare Schottky
Metal pole (i.e. anode A node) and at least one with silicon carbide substrates formed Ohmic contact cathode (Cathode).In carborundum
In epi-layer surface, the metal at schottky metal pole forms Schottky metal contact with silicon carbide epitaxy layer surface, contacts gesture
Base enables schottky metal pole to absorb the electronics launched from cathode (Cathode) in forward bias, meeting during reverse bias
Stop electronics enter anode so that Schottky diode be single carrier diode component, N-diode it is main
Carrier is electronics.
Under some applications, especially drive motor when, it is to be in breakdown conditions that device, which can not avoid moment,
During breakdown, substantial amounts of electron hole pair can be produced in device, under HVB high voltage bias, electrons go to cathode by the moon of Ohmic contact
Pole, which absorbs, to be connect away, if anode can not efficiently and effectively connect away hole, hole will be rested on around anode, reverse-biased in high pressure
Put down, these holes rested on around anode can cause device to burn failure, and silicon carbide device is finally to overcome this problem
, otherwise, its application prospect can be restricted greatly.
Some p type island regions generally are had on the surface of carborundum active area, these p type island regions are connected to anode, during breakdown,
The empty cave And that these p type island regions can collect electron hole centering caused by breakdown reaches anode metal.But in carborundum
P type island region Can Za And are not very high, and metal and this carborundum p type island region cannot form good Ohmic contact, during breakdown, anode because
Good Ohmic contact cannot be formed with p type island region so as to can not efficiently and effectively connect away hole caused by breakdown.
The content of the invention
The present invention discloses a kind of contact of metal/carbon SiClx, this contact can be effectively carrier from silicon carbide
Reach metal pole.Can be to avoid the above with this contact structures what SiC schottky diode the shortcomings that, no matter device can be made
The breakdown occurred when Hai Shi Static states caused by dynamic, caused hole can effectively be connect away during breakdown, will not be stopped
In device Inner, so that device can safely be used in the application that some have breakdown to occur, such as the application of drive motor.
The basic principle of the contact of metal/carbon SiClx used in the present invention is height hetero-junctions, for example the height of p-type is heterogeneous
Knot, and be first easy to be doped to high concentration compared with low energy gap, so that be easy to form good Ohmic contact with metal,
Hole caused by breakdown is easy to first flow to compared with low energy gap first from broad stopband, is then taken away by Metal absorption.
What the N-type SiC schottky diode of Vertical discrete was made of active area and termination environment.General two pole of Schottky
The active area of pipe or termination environment be all with p-type doped region to extend reverse bias when depletion layer, avoid electric field concentrations
And device is caused locally to puncture ahead of time.The core concept of the present invention is the contact with metal/carbon SiClx p-type height hetero-junctions, is hit
When wearing, these holes are passed through this p-type by the empty cave And that electron hole centering caused by breakdown is collected through carborundum p type island region domain
The wide p type semiconductor layer for being less than 1.5 electron volts of forbidden band between region and anode metal reaches anode metal, this is relatively narrow partly to lead
Body layer material can be silicon, germanium or germanium silicon (GeSi) etc., can be on this relatively narrow semiconductor layer structure polycrystal layer or
It is crystal epitaxial layer.The present invention can pass through implantation annealing activation in technique or plasma immersion ion implantation after annealing activates
Or outer layer growth method is introduced p type island region domain on silicon carbide, can pass through domain and technological process in design makes field
Plate and p type island region domain, which are placed on appropriate place, makes electric field concentrate on a certain local small range of device not too much and cause to hit too early
Wear, being placed on the p type island region domain of the appropriate position of near its circumference on anode metal contact hole lower epi layer surface can help effectively
It is distributed with making electric fields uniform, and can helps and receive the hole of empty six centerings of electronics caused by breakdown, implementing the present invention has
Kinds of schemes, is the key step for implementing each scheme below.
Scheme one：As shown in Fig. 2, in the active area of Schottky diode, at least a p type island region domain is placed on Schottky
Under metal pole at silicon carbide epitaxy layer surface, this p type island region domain is extended under silicon carbide from silicon carbide epitaxy layer surface,
For depth more than 0.1 micron, at least part of on this p type island region field surface is to have one layer of forbidden band partly to be led less than the p-type of 1.5 electron volts
Body layer, this relatively narrow semiconductor layer material can be silicon, germanium or germanium silicon (GeSi) etc., this relatively narrow semiconductor layer
Can be polycrystal layer or crystal epitaxial layer in structure, the metal at schottky metal pole is at least part of to be and this forbidden band phase
Contact with each other to relatively narrow p type island region domain, this contact portion is for the Ohmic contact of metal/p type island region or close to Ohmic contact, with non-P
The contact of type area epitaxy layer surface is metal/carbon SiClx Schottky contacts.
Scheme two：As shown in figure 3, it is similar with scheme one, it is a difference in that in addition to the p type island region domain (3) described in scheme one,
At least a p type island region domain (7) is placed under schottky metal pole near its circumference at silicon carbide epitaxy layer surface, this p type island region
Domain (7) is not attached to any electrode, this p type island region domain (7) is primarily used to make the electric field near Schottky contacts more equal
Even distribution, reduces the pressure that Schottky barrier is subject to internal field, so that leakage current is reduced in reverse bias.
Scheme three：As shown in figure 4, it is similar with scheme one, it is a difference in that in addition to the p type island region domain (3) described in scheme one,
At least a p type island region domain (8) is placed under schottky metal pole near its circumference at silicon carbide epitaxy layer surface, this p type island region
Domain (8) is less than the p type semiconductor layer of 1.5 electron volts without one layer of forbidden band, this p type island region domain (8) is connected to schottky metal pole,
This p type island region domain (8) is primarily used to make the electric field near Schottky contacts to be more uniformly distributed, and reduces Schottky barrier and is subject to office
The pressure of portion's electric field, so that leakage current is reduced in reverse bias.
Scheme four：As shown in figure 5, each scheme is similar with more than, be metal in schottky metal in place of main difference with
The contact of semiconductor is not exclusively.Some extremely interior metal (6) of schottky metal in this scheme, this part metals (6)
Contact with this relatively narrow P-type semiconductor layer material is the Ohmic contact of metal/p type island region or golden close to Ohmic contact, this part
Belong to ohm that (6) contact with the epi-layer surface non-p type island region domain outside this relatively narrow semiconductor layer material is metal/N-type region
Contact or close to Ohmic contact, the contact of schottky metal pole another part (i.e. non-(6) part) with epi-layer surface is Xiao Te
Base Metal/semiconductor contact , Change say it, there is three kinds of different metal/semiconductor contacts in this scheme four：Metal and relatively narrow P
Type semiconductor layer material area forms the Ohmic contact of metal/P-type semiconductor or is used as connecing away close to Ohmic contact, this contact
Hole in electron hole pair caused by breakdown；Another kind is contact of the metal with the non-p type island region domain of epi-layer surface, this is gold
The Ohmic contact of category/N-type semiconductor or close to Ohmic contact, (anode is positive bias) injection electronics during as forward conduction,
Carrier density during increase conducting, makes ducting capacity stronger；The third is contact of the metal with the non-p type island region domain of epi-layer surface,
This is the Schottky contacts of metal/N-type semiconductor, as the dominant touch of Schottky diode, can be absorbed in forward bias
The electronics to come from emission of cathode, when reverse bias, can stop that electronics enters anode so that Schottky diode is single load
Flow the diode component of son.
Compared with prior art, the beneficial effects of the invention are as follows the R＆D cycle , And that can reduce product to make production process more
Simply it is easy to do, reduces resistance to breakdown and cost performance that production cost , And improve device.
Brief description of the drawings
Attached drawing is used for providing a further understanding of the present invention, is used to explain the present invention together with embodiments of the present invention,
It is not construed as limiting the invention：
Fig. 1 is general Vertical discrete SiC schottky diode structure diagram；
There is the cross-sectional in height hetero-junctions p type island region domain in 1 active area of Fig. 2 schemes；
At least a p type island region domain is not attached to the cross-sectional of electrode in 2 active area of Fig. 3 schemes；
At least a p type island region field surface does not have the cross-sectional of the relatively narrow P-type layer of forbidden band in 3 active area of Fig. 4 schemes；
There is the cross-sectional in height hetero-junctions p type island region domain in 4 active area of Fig. 5 schemes；
Fig. 6 is that the embodiment of the present invention completes the cross-sectional in placement p type island region domain；
Fig. 7 is that the embodiment of the present invention completes the cross-sectional of the relatively narrow P-type layer of one layer of forbidden band of placement；
Fig. 8 is that the embodiment of the present invention completes the schematic diagram of aluminium alloy layer on silicon carbide device surface.
Reference symbol table：
1 N-type silicon carbide substrates
2 silicon carbide N type epitaxial layers
The p-type doped region on surface in 3 silicon carbide epitaxial layers bodies
4 inter-level dielectrics
The 5 Ni metal layers/highly doped polysilicon of aluminium alloy layer (schottky metal pole --- anode) type
6 form the metal of Ohmic contact with highly dope p-type polysilicon
The p type island region domain (7) for being not attached to any electrode of 7 epi-layer surfaces
The p type island region domain (8) of the p type semiconductor layer relatively narrow without one layer of forbidden band of 8 epi-layer surfaces
10 highly doped polysilicon layers
Embodiment
The preferred embodiment of the present invention is illustrated below in conjunction with attached drawing, it will be appreciated that described herein preferred real
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment：
As shown in fig. 6, N-type silicon carbide epitaxy is placed on to the top of N-type silicon carbide substrates first, then in epitaxial layer
Accumulation mode is used above and forms silica (SiO2) layer (thickness is O.01um to 2um oxide hards light shield), in oxide layer
On one layer of lithography coating of accumulation again, some parts that pattern exposes oxide layer are then formed by mask, then to mask shape
After the oxide layer exposed into pattern carries out dry corrosion, epitaxial layer is exposed, a p-type doping is then at least injected to silicon chip surface
Agent (aluminium (Al) and boron (B), dosage 1e14/cm2To 1e16/cm2, energy is 100KeV to 2000KeV), in order to avoid in height
Si during temperature annealing in SiC can be evaporated, and on wafer top surface, then deposited graphite layer just carries out high temperature as protection
Annealing heat-treats, between annealing temperature is about 1100 DEG C to 1600 DEG C, surface graphite linings and oxidation are just disposed after completing annealing
Layer.
As shown in fig. 7, silicon carbide is cleaned up, brilliant silicon And handles more than one layer are deposited in epitaxial layer most surface afterwards
This layer of polysilicon doping becomes high concentration P-type material, and unwanted p-type polysilicon is eroded using masks, is finally existed
At least part of at least on a p type island region surface is to have p-type polysilicon to leave to be connected directly therewith.
As shown in figure 8, silicon carbide is cleaned up, non-impurity-doped titanium dioxide is first deposited in epitaxial layer most surface afterwards
Silicon layer (thickness is 0.1um to 0.5um), then deposits boro-phosphorus glass (thickness is 0.1um to 0.8um), forms inter-level dielectric, connects
In inter-level dielectric surface accumulation lithography coating, expose part inter-level dielectric using contact hole mask, then to exposing
Part inter-level dielectric carries out dry corrosion, until exposing the upper surface of silicon carbide epitaxial layers, contact hole is formed in inter-level dielectric and is covered
Mould perforate, the lithography coating surface on contact hole bottom and inter-level dielectric deposit one layer of Nickel (Ni) layer, then dispose
Lithography coating, through Life-off methods, removes unwanted Ni metal layers when Stripping is from lithography coating, afterwards to Ni metals
Layer carries out appropriate annealing process, and common temperature range is 600 to 800C, the rapid thermal annealing 60 seconds in nitrogen Gas atmosphere, then
One layer of aluminium alloy 50 (thickness is 0.8um to 10um) is deposited above the device, is then soaked by metal mask into row metal
Erosion, forms anode metal bed course and termination environment field plate.
Finally it should be noted that：It these are only the embodiment of the present invention, be not intended to limit the invention, it is of the invention
Active area structure can be used for being related to manufacture N-type SiC schottky diode, or even other wide band gap semiconductor devices, the present invention
Also it can be used for P-type device, the structure of metal of the invention/wide bandgap semiconductor contact can be used for being related to manufacture N-type silicon carbide device
Part includes Schottky diode, or gated transistor (MOS), or igbt (IGBT) or PiN diodes.To the greatest extent
Pipe is described in detail the present invention with reference to embodiment, and for those skilled in the art, it still can be to preceding
State the technical solution described in each embodiment to modify, or equivalent substitution is carried out to which part technical characteristic, but it is all
Within the spirit and principles in the present invention, any modification, equivalent replacement, improvement and so on, should be included in the guarantor of the present invention
Protect scope it.
Claims (10)
1. a kind of resistance to breakdown Schottky diode structure of N-type carborundum is included with lower part：
(1) active area and termination environment；
(2) silicon carbide epitaxy layer surface has anode metal pole based on Schottky contacts in active area；
(3) a silicon carbide epitaxy layer surface at least p type island region domain in active area；
(4) at least part of on the p type island region field surface at this silicon carbide epitaxy layer surface is to have one layer of forbidden band is wide to be less than 1.5 electricity
The p type semiconductor layer of son volt；
(5) metal at schottky metal pole (being anode metal pole) place and the wide p type island region domain for being less than 1.5 electron volts of this layer of forbidden band
Contact portion for the Ohmic contact of metal/p type island region or close to Ohmic contact, contact with non-p-type area epitaxy layer surface to be golden
Category/silicon carbide schottky contact.
2. according to the p type island region domain described in claim 1 its (3), it is characterised in that the size width in the p type island region domain is
0.2um to 5.0um, extends under silicon carbide from semiconductor epitaxial layer surface, and depth is more than 0.1 micron, in technique
It is to activate to be formed or plasma immersion ion implantation (Plasma Immersion Ion through implantation annealing
Implantation) after annealing activates what to be formed or outer layer growth method was formed.
3. the wide p type semiconductor layer for being less than 1.5 electron volts of one layer of forbidden band according to claim 1 its (4), it is characterised in that
The material of the p type semiconductor layer can be silicon, germanium or germanium silicon (GeSi) etc., can be in structure polycrystal layer or
Crystal epitaxial layer.
4. a kind of N-type carborundum Schottky diode structure of resistance to breakdown, including following characteristics：
(1) active area and termination environment；
(2) a silicon carbide epitaxy layer surface at least p type island region domain in active area；
(3) at least part of on the p type island region field surface at this silicon carbide epitaxy layer surface is to have one layer of forbidden band is wide to be less than 1.5 electricity
The p type semiconductor layer of son volt；
(4) metal at schottky metal pole (anode) place mutually connects with silicon carbide epitaxy layer surface in active area under positive contact hole
Touch.
5. according to the p type island region domain described in claim 1 its (3), it is characterised in that the size width in the p type island region domain is
0.2um to 5.0um, extends under silicon carbide from semiconductor epitaxial layer surface, and depth is more than 0.1 micron, in technique
It is to activate to be formed or plasma immersion ion implantation (Plasma Immersion Ion through implantation annealing
Implantation) after annealing activates what to be formed or outer layer growth method was formed.
6. the wide p type semiconductor layer for being less than 1.5 electron volts of one layer of forbidden band according to claim 1 its (4), it is characterised in that
The material of the p type semiconductor layer can be silicon, germanium or germanium silicon (GeSi) etc., can be in structure polycrystal layer or
Crystal epitaxial layer.
7. the metal at schottky metal pole (anode) place according to claim 4 its (4), it is characterised in that Xiao
Some metal (9) and the wide P for being less than 1.5 electron volts of one layer of forbidden band under positive contact hole in metal at special Base Metal pole
The contact of type semiconductor layer is for the Ohmic contact of metal/p type island region or close to Ohmic contact, this part metals (9) and positive contact
The contact in the non-p type island region domain under hole is the Ohmic contact of metal/N-type region or close to Ohmic contact, the gold at schottky metal pole
The contact with the non-p type island region domain under positive contact hole of some metal is schottky metal/semiconductor contact in category.
8. a kind of structure of metal/wide bandgap semiconductor contact, including with lower part：
(1) wide bandgap semiconductor (2.1eV≤forbidden band wide≤7.1eV) and the wide semiconductor for being less than 1.5 electron volts of forbidden band are formed
Height hetero-junctions；
(2) the wide one side for being less than 1.5 electron volts of forbidden band is highly doped；
(3) metal contact with the wide one side for being less than 1.5 electron volts of forbidden band is Ohmic contact or close to Ohmic contact.
A kind of 9. structure of metal according to claim 8/wide bandgap semiconductor contact, it is characterised in that the gold
Partly lead metal/broad stopband that category/wide bandgap semiconductor contact can be used for being related to manufacture wide band gap semiconductor device wafer surface
Body contact process, it is also possible to the metal at the what wafer back side/wide bandgap semiconductor contact process.
A kind of 10. structure of metal according to claim 8/wide bandgap semiconductor contact, it is characterised in that the gold
Category/wide bandgap semiconductor contact can be used for the contact for being related to the p type island region domain at manufacture metal/broad stopband epi-layer surface, this
Contact can be efficiently used for connecing away the hole in breakdown in caused electron hole pair.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560122A (en) * | 2019-01-24 | 2019-04-02 | 派恩杰半导体（杭州）有限公司 | A kind of high pressure broad stopband diode chip for backlight unit with groove structure |
| CN110047944A (en) * | 2019-04-25 | 2019-07-23 | 江阴新顺微电子有限公司 | A kind of the TMBS device architecture and manufacturing method of low cost |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070252171A1 (en) * | 2006-04-28 | 2007-11-01 | Nissan Motor Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2013140824A (en) * | 2011-12-28 | 2013-07-18 | Rohm Co Ltd | Semiconductor device and method of manufacturing the same |
| CN103346084A (en) * | 2013-07-09 | 2013-10-09 | 苏州捷芯威半导体有限公司 | Gallium nitride Schottky diode of novel structure and manufacturing method thereof |
-
2016
- 2016-10-17 CN CN201610907476.2A patent/CN107958940A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070252171A1 (en) * | 2006-04-28 | 2007-11-01 | Nissan Motor Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2013140824A (en) * | 2011-12-28 | 2013-07-18 | Rohm Co Ltd | Semiconductor device and method of manufacturing the same |
| CN103346084A (en) * | 2013-07-09 | 2013-10-09 | 苏州捷芯威半导体有限公司 | Gallium nitride Schottky diode of novel structure and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560122A (en) * | 2019-01-24 | 2019-04-02 | 派恩杰半导体（杭州）有限公司 | A kind of high pressure broad stopband diode chip for backlight unit with groove structure |
| CN110047944A (en) * | 2019-04-25 | 2019-07-23 | 江阴新顺微电子有限公司 | A kind of the TMBS device architecture and manufacturing method of low cost |
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