CN107946420A - A kind of LED epitaxial slice and its manufacture method - Google Patents
A kind of LED epitaxial slice and its manufacture method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacture method, belong to technical field of semiconductors.Epitaxial wafer includes substrate, cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer, multiple quantum well layer includes multiple first sublayers, each first sublayer includes well layer, cap rock and barrier layer, each well layer is indium gallium nitrogen layer, each barrier layer is gallium nitride layer, each cap rock includes the second sublayer to the 7th sublayer, second sublayer and the 3rd sublayer are indium gallium nitrogen layer, and the constituent content of indium successively increases in the constituent content of indium, well layer in the constituent content of indium, the second sublayer in the 3rd sublayer；4th sublayer is gallium nitride layer, and the 5th sublayer to the 7th sublayer is gallium nitride layer, and the constituent content of aluminium successively increases in the constituent content of aluminium, electronic barrier layer in the constituent content of aluminium, the 7th sublayer in the constituent content of aluminium, the 5th sublayer in the 6th sublayer.The present invention can improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED epitaxial slice and its manufacture method.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent, have the characteristics that efficiently, environmental protection, green, be widely used in traffic lights, automobile interior exterior lamp, landscape light in city,
The technical fields such as cell phone back light source.Chip is the core component of LED, including epitaxial wafer and the electrode that is arranged on epitaxial wafer.
Existing LED epitaxial wafer includes substrate and stacks gradually cushion, n type gallium nitride layer, Multiple-quantum on substrate
Trap (English：Multiple Quantum Well, referred to as：MQW) layer, electronic barrier layer and p-type gallium nitride layer.Wherein, Multiple-quantum
Well layer includes the multiple sublayers stacked gradually, and each sublayer includes the trap (English stacked gradually：Well) layer, lid (English：cap)
Layer and base (English：Barrier) layer；Well layer is indium gallium nitrogen layer, and barrier layer is higher than the gallium nitride layer of well layer, N-type nitrogen for growth temperature
After changing the hole injection multiple quantum well layer that the electronics of gallium layer offer and p-type gallium nitride layer provide, limited by gallium nitride quantum barrier layer
Radiation recombination is carried out in indium gallium nitrogen quantum well layer to shine；Cap rock is equal to the gallium nitride layer of well layer for growth temperature, can be to avoid
Well layer is subject to the high temperature of barrier layer.
In the implementation of the present invention, inventor has found that the prior art has at least the following problems：
Cap rock and well layer use different materials, between each other there are lattice mismatch, can cause polarity effect, final to influence
The luminous efficiency of LED.If cap rock uses the material identical with well layer, it is likely to result in indium and is diffused into barrier layer, destroys and build
The crystal quality of layer, so as to influence luminous efficiency.
The content of the invention
In order to solve problem of the prior art, an embodiment of the present invention provides a kind of LED epitaxial slice and its manufacture
Method.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of LED epitaxial slice, the LED epitaxial slice bag
Include substrate and stack gradually cushion over the substrate, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer,
Electronic barrier layer and p-type gallium nitride layer, the electronic barrier layer are gallium nitride layer, and the multiple quantum well layer includes what is stacked gradually
Multiple first sublayers, each first sublayer include well layer, cap rock and the barrier layer stacked gradually, and each well layer is indium gallium
Nitrogen layer, each barrier layer are gallium nitride layer, the second sublayer that each cap rock includes stacking gradually, the 3rd sublayer, the 4th
Sublayer, the 5th sublayer, the 6th sublayer and the 7th sublayer, second sublayer and the 3rd sublayer are indium gallium nitrogen layer, described
The constituent content of indium is less than the constituent content of indium in second sublayer in 3rd sublayer, and the component of indium contains in second sublayer
Amount is less than the constituent content of indium in the well layer；4th sublayer is gallium nitride layer, the 5th sublayer, the 6th sublayer
It is gallium nitride layer with the 7th sublayer, the constituent content of aluminium is less than the group of aluminium in the 5th sublayer in the 6th sublayer
Point content, the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer, the 7th sublayer in the 5th sublayer
The constituent content of middle aluminium is less than the constituent content of aluminium in the electronic barrier layer.
Alternatively, the thickness of the 4th sublayer is more than the sum of thickness of second sublayer and the 3rd sublayer, institute
State the sum of thickness of the second sublayer and the 3rd sublayer and be more than the 5th sublayer, the 6th sublayer and the 7th sublayer
The sum of thickness.
Alternatively, the sum of thickness of second sublayer and the 3rd sublayer is the 1/10~1/ of the thickness of the well layer
5。
Alternatively, the constituent content of indium is respectively institute in the constituent content of indium and second sublayer in the 3rd sublayer
State 1/50~1/10 of the constituent content of indium in well layer.
Alternatively, the constituent content of aluminium and described in the constituent content of aluminium, the 6th sublayer in the 5th sublayer
The constituent content of aluminium is respectively 1/50~1/20 of the constituent content of aluminium in the electronic barrier layer in seven sublayers.
On the other hand, an embodiment of the present invention provides a kind of manufacture method of LED epitaxial slice, the manufacturer
Method includes：
One substrate is provided；
Grown buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, electronics successively over the substrate
Barrier layer and p-type gallium nitride layer；
Wherein, the electronic barrier layer is gallium nitride layer, and the multiple quantum well layer includes multiple first sons stacked gradually
Layer, each first sublayer include well layer, cap rock and the barrier layer stacked gradually, and each well layer is indium gallium nitrogen layer, each
The barrier layer is gallium nitride layer, the second sublayer that each cap rock includes stacking gradually, the 3rd sublayer, the 4th sublayer, the 5th
Sublayer, the 6th sublayer and the 7th sublayer, second sublayer and the 3rd sublayer are indium gallium nitrogen layer, in the 3rd sublayer
The constituent content of indium is less than the constituent content of indium in second sublayer, and the constituent content of indium is less than described in second sublayer
The constituent content of indium in well layer；4th sublayer is gallium nitride layer, the 5th sublayer, the 6th sublayer and the described 7th
Sublayer is gallium nitride layer, and the constituent content of aluminium is less than the constituent content of aluminium in the 5th sublayer, institute in the 6th sublayer
The constituent content for stating aluminium in the 5th sublayer is less than the constituent content of aluminium in the 7th sublayer, the component of aluminium in the 7th sublayer
Content is less than the constituent content of aluminium in the electronic barrier layer.
Alternatively, the growth rate of the growth rate of second sublayer and the 3rd sublayer is respectively less than the 4th son
The growth rate of layer, the life of the growth rate of the 5th sublayer, the growth rate and the 7th sublayer of the 6th sublayer
Long speed is all higher than the growth rate of the 4th sublayer.
Alternatively, the growth temperature of the growth temperature of second sublayer and the 3rd sublayer is below the 4th son
The growth temperature of layer, the life of the growth temperature of the 5th sublayer, the growth temperature and the 7th sublayer of the 6th sublayer
Long temperature is above the growth temperature of the 4th sublayer.
Alternatively, the growth temperature of the growth temperature of second sublayer and the 3rd sublayer is above the well layer
Growth temperature.
Alternatively, the growth temperature of the 5th sublayer, the growth temperature of the 6th sublayer and the 7th sublayer
Growth temperature is below the growth temperature of the barrier layer.
The beneficial effect that technical solution provided in an embodiment of the present invention is brought is：
By the second sublayer for being designed as stacking gradually by the cap rock between well layer and barrier layer, the 3rd sublayer, the 4th sublayer,
5th sublayer, the 6th sublayer and the 7th sublayer, are indium gallium nitrogen layer close to the second sublayer of well layer and the 3rd sublayer, are used with well layer
Identical material so that form preferable Lattice Matching between cap rock and well layer, the negatively influencing for effectively avoiding polarity effect from bringing,
Protect the luminous efficiency of LED；Indium in the constituent content of indium, the 3rd sublayer in the constituent content of indium, the second sublayer in well layer at the same time
Constituent content successively reduce, it is possible to reduce the indium being diffused into barrier layer.It is gallium nitride layer positioned at the 4th middle sublayer, a side
Face can stop that indium is diffused into barrier layer, on the other hand electronics and hole can be limited in progress radiation recombination hair in well layer
Light.The 4th sublayer, the 5th sublayer and the 6th sublayer close to barrier layer are gallium nitride layer, and higher gesture is formed using gallium nitride layer
Build, electronics and hole effectively further are limited in progress radiation recombination in well layer shines；And the 6th aluminium in sublayer component
In content, the 5th sublayer in the constituent content of aluminium, the 7th sublayer in the constituent content of aluminium, electronic barrier layer aluminium constituent content by
Layer increases, and the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in the 5th sublayer, and it is more to be conducive to electron injection
Radiation recombination is carried out in well layer with hole to shine, while the component of aluminium contains in the 6th sublayer between the 5th sublayer and the 7th sublayer
Amount is minimum, becomes electronics savings layer, reduces the migration rate of electronics, can cause more electronics and hole hair for composite
Light, can also reduce the electron amount revealed to p-type gallium nitride layer.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of structure diagram for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 is the structure diagram for the multiple quantum well layer that the embodiment of the present invention one provides；
Fig. 3 is the structure diagram for the cap rock that the embodiment of the present invention one provides；
Fig. 4 is a kind of flow chart of the manufacture method of LED epitaxial slice provided by Embodiment 2 of the present invention；
Fig. 5 is a kind of flow chart of the manufacture method for LED epitaxial slice that the embodiment of the present invention three provides；
Fig. 6 is the comparison diagram for the sample detection result that the embodiment of the present invention three provides.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
An embodiment of the present invention provides a kind of LED epitaxial slice, and referring to Fig. 1, which includes
Substrate 1 and stack gradually cushion 2 on substrate 1, undoped gallium nitride layer 3, n type gallium nitride layer 4, multiple quantum well layer 5,
Electronic barrier layer 6 and p-type gallium nitride layer 7.
In the present embodiment, electronic barrier layer 6 is gallium nitride layer.Referring to Fig. 2, multiple quantum well layer 5 includes what is stacked gradually
Multiple first sublayers 50, each first sublayer 50 include well layer 51, cap rock 52 and the barrier layer 53 stacked gradually.Each well layer 51 is
Indium gallium nitrogen layer, each barrier layer 52 are gallium nitride layer.Referring to Fig. 3, the second sublayer 52a that each cap rock 52 includes stacking gradually, the
Three sublayer 52b, the 4th sublayer 52c, the 5th sublayer 52d, the 6th sublayer 52e and the 7th sublayer 52f.Second sublayer 52a and the 3rd
Sublayer 52b is indium gallium nitrogen layer, and the constituent content of indium is less than the constituent content of indium in the second sublayer 52a in the 3rd sublayer 52b, the
The constituent content of indium is less than the constituent content of indium in well layer 51 in two sublayer 52a.4th sublayer 52c is gallium nitride layer.5th son
Layer 52d, the 6th sublayer 52e and the 7th sublayer 52f are gallium nitride layer, and the constituent content of aluminium is less than the 5th in the 6th sublayer 52e
The constituent content of aluminium in sublayer 52d, the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer 52f in the 5th sublayer 52d,
The constituent content of aluminium is less than the constituent content of aluminium in electronic barrier layer 6 in 7th sublayer 52f.
The embodiment of the present invention passes through the second sublayer for being designed as stacking gradually by the cap rock between well layer and barrier layer, the 3rd son
Layer, the 4th sublayer, the 5th sublayer, the 6th sublayer and the 7th sublayer, are indium gallium nitrogen close to the second sublayer of well layer and the 3rd sublayer
Layer, uses identical material so that preferable Lattice Matching is formed between cap rock and well layer, effectively avoids polarity effect with well layer
The negatively influencing brought, protects the luminous efficiency of LED；At the same time the constituent content of indium in the constituent content of indium, the second sublayer in well layer,
The constituent content of indium is successively reduced in 3rd sublayer, it is possible to reduce the indium being diffused into barrier layer.It is positioned at the 4th middle sublayer
Gallium nitride layer, on the one hand can stop that indium is diffused into barrier layer, on the other hand electronics and hole can be limited in well layer into
Row radiation recombination shines.The 4th sublayer, the 5th sublayer and the 6th sublayer close to barrier layer are gallium nitride layer, utilize gallium nitride layer shape
Into higher potential barrier, electronics and hole are effectively further limited in progress radiation recombination in well layer and shone；And the 6th sublayer
Aluminium in the constituent content of aluminium, electronic barrier layer in the constituent content of aluminium, the 7th sublayer in the constituent content of middle aluminium, the 5th sublayer
Constituent content successively increases, and the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in the 5th sublayer, is conducive to electronics
Inject in more well layer and shine with hole progress radiation recombination, while in the 6th sublayer between the 5th sublayer and the 7th sublayer
The constituent content of aluminium is minimum, becomes electronics savings layer, reduces the migration rate of electronics, can cause more electronics and hole into
Row recombination luminescence, can also reduce the electron amount revealed to p-type gallium nitride layer.
Alternatively, the sum of thickness that the thickness of the 4th sublayer 52c can be more than the second sublayer 52a and the 3rd sublayer 52b, the
The sum of thickness of two sublayer 52a and the 3rd sublayer 52b can be more than the 5th sublayer 52d, the 6th sublayer 52e and the 7th sublayer 52f
The sum of thickness.The thickness of gallium nitride layer is maximum in cap rock, on the one hand can effectively stop that indium is diffused into barrier layer, on the other hand
Electronics and hole can be effectively limited to recombination luminescence in well layer, the thickness of gallium nitride layer is minimum, can reduce aluminium as far as possible
Lattice mismatch between gallium nitrogen layer and gallium nitride layer.
Specifically, the sum of thickness of the second sublayer 52a and the 3rd sublayer 52b can be 0.4nm~0.8nm, the 4th sublayer
The thickness of 52c can be 0.8nm~1.2nm, and the sum of thickness of the 5th sublayer 52d, the 6th sublayer 52e and the 7th sublayer 52f can
Think 0.3nm~0.6nm.
Alternatively, the sum of thickness of the second sublayer 52a and the 3rd sublayer 52b can be the 1/10~1/ of the thickness of well layer 51
5.If the sum of thickness of the second sublayer 52a and the 3rd sublayer 52b is less than the 1/10 of the thickness of well layer 51, lattice may not had
Matched effect；If the sum of thickness of the second sublayer 52a and the 3rd sublayer 52b is more than the 1/5 of the thickness of well layer 51, possible shadow
Sound arrives crystal quality.
Alternatively, the constituent content of indium can be respectively in the constituent content and the 3rd sublayer 52b of indium in the second sublayer 52a
The 1/50~1/10 of the constituent content of indium in well layer 51.If indium in the constituent content and the 3rd sublayer 52b of indium in the second sublayer 52a
Constituent content be respectively less than 1/50 of the constituent content of indium in well layer 51, then be likely to result in the group of indium in indium gallium nitrogen layer in cap rock
Divide content too low, good Lattice Matching can not be formed with well layer；If the constituent content and the 3rd sublayer of indium in the second sublayer 52a
The constituent content of indium is all higher than 1/10 of the constituent content of indium in well layer 51 in 52b, then is likely to result in indium gallium nitrogen layer in cap rock
The constituent content of middle indium is excessive, in turn results in indium and is diffused into barrier layer, influences overall crystal quality.
Alternatively, in the 5th sublayer 52d in the constituent content of aluminium, the 6th sublayer 52e aluminium constituent content and the 7th sublayer
The constituent content of aluminium can be respectively 1/50~1/20 of the constituent content of aluminium in electronic barrier layer 6 in 52f.If the 5th sublayer
The constituent content of aluminium is respectively less than in the constituent content and the 7th sublayer 52f of aluminium in the constituent content of aluminium, the 6th sublayer 52e in 52d
The 1/50 of the constituent content of aluminium in electronic barrier layer 6, then it is too low to be likely to result in the constituent content of aluminium in gallium nitride layer in cap rock,
Desired barrier height is not reached；If in the 5th sublayer 52d in the constituent content of aluminium, the 6th sublayer 52e the constituent content of aluminium and
The constituent content of aluminium is all higher than 1/20 of the constituent content of aluminium in electronic barrier layer 6 in 7th sublayer 52f, then is likely to result in lid
The constituent content of aluminium is excessive in gallium nitride layer in layer, and then causes serious lattice mismatch, influences overall crystal quality.
Specifically, substrate can be Sapphire Substrate；Cushion can be gallium nitride layer；Electronic barrier layer can be specially
AlyGa1-yN layers, 0.15≤y≤0.25.
More specifically, the thickness of cushion can be 15nm~30nm；The thickness of undoped gallium nitride layer can be 2 μm~
3.5μm；The thickness of n type gallium nitride layer can be 2 μm~3 μm；The thickness of each well layer can be 2nm~3nm, each barrier layer
Thickness can be 8nm~11nm, and the quantity of the first sublayer can be 11~13, and the thickness of multiple quantum well layer can be
130nm~160nm；The thickness of electronic barrier layer can be 30nm~50nm, the thickness of p-type gallium nitride layer can be 50nm~
80nm。
Embodiment two
An embodiment of the present invention provides a kind of manufacture method of LED epitaxial slice, is carried suitable for manufacture embodiment one
The LED epitaxial slice of confession, referring to Fig. 4, which includes：
Step 201：One substrate is provided.
Step 202：On substrate successively grown buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer,
Electronic barrier layer and p-type gallium nitride layer.
In the present embodiment, electronic barrier layer is gallium nitride layer, and multiple quantum well layer includes multiple first sons stacked gradually
Layer, each first sublayer include well layer, cap rock and the barrier layer stacked gradually.Each well layer is indium gallium nitrogen layer, and each barrier layer is nitrogen
Change gallium layer, each cap rock includes the second sublayer, the 3rd sublayer, the 4th sublayer, the 5th sublayer, the 6th sublayer and the stacked gradually
Seven sublayers.Second sublayer and the 3rd sublayer are indium gallium nitrogen layer, and the constituent content of indium is less than indium in the second sublayer in the 3rd sublayer
Constituent content, the constituent content of indium is less than the constituent content of indium in well layer in the second sublayer；4th sublayer is gallium nitride layer；The
Five sublayers, the 6th sublayer and the 7th sublayer are gallium nitride layer, and the constituent content of aluminium is less than aluminium in the 5th sublayer in the 6th sublayer
Constituent content, the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in the 5th sublayer, the group of aluminium in the 7th sublayer
Content is divided to be less than the constituent content of aluminium in electronic barrier layer.
The embodiment of the present invention passes through the second sublayer for being designed as stacking gradually by the cap rock between well layer and barrier layer, the 3rd son
Layer, the 4th sublayer, the 5th sublayer, the 6th sublayer and the 7th sublayer, are indium gallium nitrogen close to the second sublayer of well layer and the 3rd sublayer
Layer, uses identical material so that preferable Lattice Matching is formed between cap rock and well layer, effectively avoids polarity effect with well layer
The negatively influencing brought, protects the luminous efficiency of LED；At the same time the constituent content of indium in the constituent content of indium, the second sublayer in well layer,
The constituent content of indium is successively reduced in 3rd sublayer, it is possible to reduce the indium being diffused into barrier layer.It is positioned at the 4th middle sublayer
Gallium nitride layer, on the one hand can stop that indium is diffused into barrier layer, on the other hand electronics and hole can be limited in well layer into
Row radiation recombination shines.The 4th sublayer, the 5th sublayer and the 6th sublayer close to barrier layer are gallium nitride layer, utilize gallium nitride layer shape
Into higher potential barrier, electronics and hole are effectively further limited in progress radiation recombination in well layer and shone；And the 6th sublayer
Aluminium in the constituent content of aluminium, electronic barrier layer in the constituent content of aluminium, the 7th sublayer in the constituent content of middle aluminium, the 5th sublayer
Constituent content successively increases, and the constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in the 5th sublayer, is conducive to electronics
Inject in more well layer and shine with hole progress radiation recombination, while in the 6th sublayer between the 5th sublayer and the 7th sublayer
The constituent content of aluminium is minimum, becomes electronics savings layer, reduces the migration rate of electronics, can cause more electronics and hole into
Row recombination luminescence, can also reduce the electron amount revealed to p-type gallium nitride layer.
Alternatively, the growth rate of the growth rate of the second sublayer and the 3rd sublayer can be respectively less than the growth of the 4th sublayer
Speed, growth rate, the growth rate of the 6th sublayer and the growth rate of the 7th sublayer of the 5th sublayer can be all higher than the 4th
The growth rate of sublayer, is matched with the growth temperature with each layer, ensures crystal quality.
Specifically, the growth rate of the growth rate of the second sublayer and the 3rd sublayer can be 0.4nm/min~0.8nm/
Min, the growth rate of the 4th sublayer can be 0.6nm/min~1.2nm/min, growth rate, the 6th sublayer of the 5th sublayer
Growth rate and the growth rate of the 7th sublayer can be 0.8nm/min~2nm/min.
Alternatively, the growth temperature of the growth temperature of the second sublayer and the 3rd sublayer can be below the growth of the 4th sublayer
Temperature, growth temperature, the growth temperature of the 6th sublayer and the growth temperature of the 7th sublayer of the 5th sublayer can be above the 4th
The growth temperature of sublayer.Indium gallium nitrogen layer, gallium nitride layer and gallium nitride layer are successively set between well layer and barrier layer in cap rock, well layer
Growth temperature be less than the growth temperature of barrier layer, the growth temperature of indium gallium nitrogen layer, gallium nitride layer and gallium nitride layer is successively in cap rock
Rise, can match with the well layer of both sides and the growth temperature of barrier layer, reduce the negatively influencing to well layer, while improve as far as possible brilliant
Weight.
Specifically, the growth temperature of the second sublayer can be 780 DEG C~820 DEG C, and the growth temperature of the 3rd sublayer can be
780 DEG C~830 DEG C, the growth temperature of the 4th sublayer can be 830 DEG C~850 DEG C, growth temperature, the 6th sublayer of the 5th sublayer
Growth temperature and the 7th sublayer growth temperature can be 850 DEG C~880 DEG C.
Alternatively, the growth temperature of the growth temperature of the second sublayer and the 3rd sublayer can be above the growth temperature of well layer
Degree, to be gradually transitioned into the growth temperature of barrier layer from the growth temperature of well layer, improves crystal quality.
Alternatively, the growth temperature of the growth temperature of the 5th sublayer, the growth temperature of the 6th sublayer and the 7th sublayer can be with
The growth temperature of barrier layer is below, to be gradually transitioned into the growth temperature of barrier layer from the growth temperature of well layer, improves crystal quality.
In practical applications, the growth pressure of the growth pressure of the second sublayer, the growth pressure of the 3rd sublayer and the 4th sublayer
Power can be 200torr, and the growth pressure of the growth pressure of the 5th sublayer, the growth pressure of the 6th sublayer and the 7th sublayer can be with
For 100torr~200torr.
Specifically, the growth temperature of cushion can be 530 DEG C~560 DEG C, growth pressure can be 200torr~
500torr, growth rate can be 10nm/min~20nm/min.The growth temperature of undoped gallium nitride layer can be 1000 DEG C
~1100 DEG C, growth pressure can be 200torr~600torr, and growth rate can be 2 μm/h~5 μm/h.N type gallium nitride
The growth temperature of layer can be 1000 DEG C~1100 DEG C, and growth pressure can be 200torr~300torr, and growth rate can be with
For 3 μm/h~8 μm/h.The growth temperature of each well layer can be 760 DEG C~780 DEG C, and growth pressure can be 200torr, raw
Long speed can be 0.2nm/min~0.6nm/min；The growth temperature of each barrier layer can be 860 DEG C~890 DEG C, growth pressure
Power can be 200torr, and growth rate can be 2nm/min~5nm/min.The growth temperature of electronic barrier layer can be 930
DEG C~970 DEG C, growth pressure can be 100torr, and growth rate can be 0.2 μm/h~1 μm/h.The life of p-type gallium nitride layer
Long temperature can be 940 DEG C~980 DEG C, and growth pressure can be 200torr~600torr, and growth rate can be 0.3 μm/h
~1 μm/h.
Specifically, buffer growth is on sapphire [0001] face.
Alternatively, before step 201, which can also include：
It is 1000 DEG C~1100 DEG C to control reaction chamber temperature, and pressure is 200torr~500torr, and Sapphire Substrate is existed
Hydrogen atmosphere under carry out 5min~6min high-temperature process, to clean the surface of Sapphire Substrate.
Alternatively, after step 202, which can also include：
It is 650 DEG C~750 DEG C to control reaction chamber temperature, persistently handle in a nitrogen atmosphere p-type gallium nitride layer 20min~
30min, to activate p-type contact layer.
It should be noted that activation p-type contact layer is mainly the magnesium adulterated in p-type contact layer, magnesium is set to be produced more after activating
More holes, avoids causing Ohmic contact poor due to not activating, and causes chip brightness low and the high situation of voltage.
Embodiment three
An embodiment of the present invention provides a kind of manufacture method of LED epitaxial slice, manufacturer provided in this embodiment
Method is a kind of specific implementation for the manufacture method that embodiment two provides.In the present embodiment, using Veeco K465i or C4 gold
Belong to organic compound chemical gaseous phase deposition (English：Metal Organic Chemical Vapor Deposition, referred to as：
MOCVD) equipment realizes the manufacture of LED epitaxial wafer.Using high-purity hydrogen (H2) or high pure nitrogen (N2) or high-purity H2And high-purity N2's
Mixed gas is as carrier gas, high-purity N H3As nitrogen source, trimethyl gallium (TMGa) and triethyl-gallium (TEGa) are used as gallium source, front three
Base indium (TMIn) is used as indium source, and trimethyl aluminium (TMAl) is used as silicon source, and silane (SiH4) is used as N type dopant, two luxuriant magnesium
(CP2Mg) it is used as P-type dopant.Chamber pressure is controlled in 100torr~600torr.
Specifically, include referring to Fig. 5, the manufacture method：
Step 301：Control reaction chamber temperature be 1050 DEG C, pressure 250torr, by Sapphire Substrate hydrogen atmosphere
The high-temperature process of lower progress 5.5min, to clean the surface of Sapphire Substrate.
Step 302：It is 545 DEG C, growth pressure 250torr, growth rate 15nm/min, in indigo plant to control growth temperature
Jewel Grown thickness is the gallium nitride layer of 22.5nm, forms cushion.
Step 303：It is 1050 DEG C, growth pressure 400torr to control growth temperature, and growth rate is 3.5 μm/h, slow
Rush the undoped gallium nitride layer that growth thickness on layer is 2.75 μm.
Step 304：It is 1050 DEG C, growth pressure 250torr to control growth temperature, and growth rate is 5.5 μm/h, non-
Growth thickness is 2.5 μm of n type gallium nitride layer in doped gallium nitride layer.
Step 305：Multiple quantum well layer is grown on n type gallium nitride layer.
In the present embodiment, multiple quantum well layer includes 12 the first sublayers, and each first sublayer includes the trap stacked gradually
Layer, cap rock and barrier layer.Each well layer is indium gallium nitrogen layer, and growth temperature is 770 DEG C, growth pressure 200torr, and growth rate is
0.4nm/min, thickness 2.5nm；Each barrier layer is gallium nitride layer, and growth temperature is 875 DEG C, growth pressure 200torr, raw
Long speed is 3.5nm/min, thickness 12nm.
Each cap rock include stack gradually the second sublayer, the 3rd sublayer, the 4th sublayer, the 5th sublayer, the 6th sublayer and
7th sublayer；Second sublayer and the 3rd sublayer are indium gallium nitrogen layer, and the growth temperature of the second sublayer is 780 DEG C, the life of the 3rd sublayer
Long temperature is 800 DEG C, and the growth pressure of the second sublayer and the 3rd sublayer is 200torr, the growth of the second sublayer and the 3rd sublayer
Speed is 0.5nm/min, and the sum of thickness of the second sublayer and the 3rd sublayer is 0.5nm, and the constituent content of indium is in the second sublayer
The 1/20 of the constituent content of indium in well layer, the constituent content of indium is 1/40 of the constituent content of indium in well layer in the 3rd sublayer；The
Four sublayers are gallium nitride layer, and growth temperature is 830 DEG C, growth pressure 200torr, growth rate 0.8nm/min, and thickness is
1nm；5th sublayer, the 6th sublayer and the 7th sublayer are gallium nitride layer, and the growth temperature of the 5th sublayer is 850 DEG C, the 6th sublayer
Growth temperature be 860 DEG C, the growth temperature of the 7th sublayer is 870 DEG C, and the 5th sublayer, the 6th sublayer and the 7th sublayer are gallium aluminium
The growth pressure of nitrogen layer is 150torr, and the growth rate of the 5th sublayer is 0.8nm/min, and the growth rate of the 6th sublayer is
1nm/min, the growth rate of the 7th sublayer is 1.5nm/min, and the 5th sublayer, the 6th sublayer and the 7th sublayer are gallium nitride layer
The sum of thickness is 0.4nm, and the constituent content of aluminium is 1/30 of the constituent content of aluminium in electronic barrier layer in the 5th sublayer, the 6th son
The constituent content of aluminium is 1/50 of the constituent content of aluminium in electronic barrier layer in layer, and the constituent content of aluminium is electronics in the 7th sublayer
The 1/20 of the constituent content of aluminium in barrier layer.
Step 306：It is 950 DEG C, growth pressure 150torr to control growth temperature, and growth rate is 0.6 μm/h, more
The gallium nitride layer that growth thickness is on quantum well layer, forms electronic barrier layer.
Step 307：It is 960 DEG C, growth pressure 400torr to control growth temperature, and growth rate is 0.65 μm/h, in electricity
Growth thickness is the p-type gallium nitride layer of 65nm on sub- barrier layer.
Plate the tin indium oxide metal oxygen of 110nm under identical process conditions to the first sample and the second sample separately below
Compound (English：Indium Tin Oxides, referred to as：ITO) layer, the Cr/Pt/Au electrodes of 120nm and the SiO of 40nm2Protection
Layer, and the core particles by the first sample after processing and the second sample grinding and cutting into 254 μm * 862 μm (10mi*30mil) respectively
With the core particles of 229 μm * 559 μm (9mi*22mil).Wherein, the second sample is using outside light emitting diode provided in this embodiment
Prolong what the manufacture method of piece obtained, the manufacture method and the second sample that the first sample uses are essentially identical, and difference is, respectively
A cap rock only includes gallium nitride layer, and gallium nitride layer is as the 4th sublayer in the second sample.
Then the first sample and the same position of the second sample after treatment each selects 300 crystal grain, identical
Under process conditions, white light LEDs are packaged into.Tested and come under the conditions of driving current 150mA and 60mA respectively using integrating sphere
The crystal grain of first sample and come from the second sample crystal grain photoelectric properties.
Referring to Fig. 6, the results show that come from the crystal grain of the second sample compared with the crystal grain than coming from the first sample, light
It is obviously improved under the driving current of 150mA and 60mA by force, illustrates the extension of manufacture method manufacture provided in this embodiment
Piece can improve the luminous efficiency of LED.
It should be noted that in other embodiments, the parameter such as growth temperature of each layer can also take other values, the present invention
It is not intended to limit numerical value in this present embodiment.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on, should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED epitaxial slice, the LED epitaxial slice includes substrate and is sequentially laminated on the substrate
On cushion, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, electronic barrier layer and p-type gallium nitride layer, it is described
Electronic barrier layer is gallium nitride layer, and the multiple quantum well layer includes multiple first sublayers stacked gradually, each first son
Layer includes well layer, cap rock and the barrier layer stacked gradually, and each well layer is indium gallium nitrogen layer, and each barrier layer is gallium nitride
Layer, it is characterised in that each cap rock include stack gradually the second sublayer, the 3rd sublayer, the 4th sublayer, the 5th sublayer,
6th sublayer and the 7th sublayer, second sublayer and the 3rd sublayer are indium gallium nitrogen layer, indium in the 3rd sublayer
Constituent content is less than the constituent content of indium in second sublayer, and the constituent content of indium is less than the well layer in second sublayer
The constituent content of middle indium；4th sublayer is gallium nitride layer, the 5th sublayer, the 6th sublayer and the 7th sublayer
It is gallium nitride layer, the constituent content of aluminium is less than the constituent content of aluminium in the 5th sublayer in the 6th sublayer, and described the
The constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in five sublayers, the constituent content of aluminium in the 7th sublayer
Less than the constituent content of aluminium in the electronic barrier layer.
2. LED epitaxial slice according to claim 1, it is characterised in that the thickness of the 4th sublayer is more than institute
The sum of thickness of the second sublayer and the 3rd sublayer is stated, the sum of thickness of second sublayer and the 3rd sublayer is more than institute
State the sum of thickness of the 5th sublayer, the 6th sublayer and the 7th sublayer.
3. LED epitaxial slice according to claim 1 or 2, it is characterised in that second sublayer and described
The sum of thickness of three sublayers is the 1/10~1/5 of the thickness of the well layer.
4. LED epitaxial slice according to claim 1 or 2, it is characterised in that the group of indium in the 3rd sublayer
The constituent content of indium is respectively 1/50~1/10 of the constituent content of indium in the well layer in point content and second sublayer.
5. LED epitaxial slice according to claim 1 or 2, it is characterised in that the group of aluminium in the 5th sublayer
The constituent content of aluminium is respectively the electronics resistance in the constituent content of aluminium and the 7th sublayer in point content, the 6th sublayer
The 1/50~1/20 of the constituent content of aluminium in barrier.
6. a kind of manufacture method of LED epitaxial slice, it is characterised in that the manufacture method includes：
One substrate is provided；
Grown buffer layer, undoped gallium nitride layer, n type gallium nitride layer, multiple quantum well layer, electronic blocking successively over the substrate
Layer and p-type gallium nitride layer；
Wherein, the electronic barrier layer is gallium nitride layer, and the multiple quantum well layer includes multiple first sublayers stacked gradually, respectively
A first sublayer includes the well layer, cap rock and the barrier layer that stack gradually, and each well layer is indium gallium nitrogen layer, each base
Layer be gallium nitride layer, each cap rock including stack gradually the second sublayer, the 3rd sublayer, the 4th sublayer, the 5th sublayer, the
Six sublayers and the 7th sublayer, second sublayer and the 3rd sublayer are indium gallium nitrogen layer, the group of indium in the 3rd sublayer
Point content is less than the constituent content of indium in second sublayer, and the constituent content of indium is less than in the well layer in second sublayer
The constituent content of indium；4th sublayer is gallium nitride layer, and the 5th sublayer, the 6th sublayer and the 7th sublayer are equal
For gallium nitride layer, the constituent content of aluminium is less than the constituent content of aluminium in the 5th sublayer in the 6th sublayer, and the described 5th
The constituent content of aluminium is less than the constituent content of aluminium in the 7th sublayer in sublayer, and the constituent content of aluminium is small in the 7th sublayer
The constituent content of aluminium in the electronic barrier layer.
7. manufacture method according to claim 6, it is characterised in that the growth rate of second sublayer and the described 3rd
The growth rate of sublayer is respectively less than the growth rate of the 4th sublayer, the growth rate of the 5th sublayer, the 6th son
The growth rate of layer and the growth rate of the 7th sublayer are all higher than the growth rate of the 4th sublayer.
8. the manufacture method according to claim 6 or 7, it is characterised in that the growth temperature of second sublayer and described
The growth temperature of 3rd sublayer is below the growth temperature of the 4th sublayer, the growth temperature of the 5th sublayer, described
The growth temperature of the growth temperature of six sublayers and the 7th sublayer is above the growth temperature of the 4th sublayer.
9. the manufacture method according to claim 6 or 7, it is characterised in that the growth temperature of second sublayer and described
The growth temperature of 3rd sublayer is above the growth temperature of the well layer.
10. the manufacture method according to claim 6 or 7, it is characterised in that the growth temperature of the 5th sublayer, described
The growth temperature of the growth temperature of 6th sublayer and the 7th sublayer is below the growth temperature of the barrier layer.
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| WO2023108882A1 (en) * | 2021-12-13 | 2023-06-22 | 聚灿光电科技股份有限公司 | Led epitaxial structure, preparation method therefor, and application thereof |
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