CN107946272A - 一种高集成度的功率mosfet逆变模块 - Google Patents

一种高集成度的功率mosfet逆变模块 Download PDF

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CN107946272A
CN107946272A CN201711160732.7A CN201711160732A CN107946272A CN 107946272 A CN107946272 A CN 107946272A CN 201711160732 A CN201711160732 A CN 201711160732A CN 107946272 A CN107946272 A CN 107946272A
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copper
clad plate
inverter module
mosfet
ceramic copper
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车湖深
李彦莹
于今
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China Aviation Chongqing Microelectronics Co Ltd
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China Aviation Chongqing Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本发明一种高集成度的功率MOSFET逆变模块，应用于小功率逆变领域，其特征在于，所述逆变模块包括陶瓷覆铜板和MOSFET芯片，所述陶瓷覆铜板与所述MOSFET芯片通过金属丝相连接，所述陶瓷覆铜板连接有若干金属端子，所述陶瓷覆铜板、所述MOSFET芯片和所述金属端子使用封装材料进行灌封；有益效果：采用集成MOSFET模块提高设计可提高产品的集成度，使定位安装更加便捷；使芯片排列更致密，减少了占用面积；通过内部电路设计，减少了引出端子数量，使电路更加简洁；采用陶瓷覆铜板作为导热材料，提高了产品的蓄热能力，使工作时温度上升曲线更平滑，提高产品稳定性；模块内部采用陶瓷作为绝缘层，使产品成为绝缘型产品，杜绝了分立器件产品不绝缘引起的安全风险。

Description

一种高集成度的功率MOSFET逆变模块
技术领域
本发明涉及小功率逆变领域，尤其涉及一种高集成度的功率MOSFET逆变模块。
背景技术
小功率三相逆变领域常常采用MOSFET分立器件实现电路结构，采用6只MOSFET分立器件，由于器件数量较多，且单个MOSFET分立器件有3只引脚，实现一个逆变电路将会有18只引脚，在实际电路设计中需要预留足够的空间放置分立器件；且每个MOSFET分立器件在应用中有散热需求，每个MOSFET分立器件均需要进行固定，引起装配上的不便。
发明内容
针对上述问题，本发明一种高集成度的功率MOSFET逆变模块，应用于小功率逆变领域，其特征在于，所述逆变模块包括陶瓷覆铜板和MOSFET芯片，所述陶瓷覆铜板与所述MOSFET芯片通过金属丝相连接，所述陶瓷覆铜板连接有若干金属端子，所述陶瓷覆铜板、所述MOSFET芯片和所述金属端子使用封装材料进行灌封。
其中，所述陶瓷覆铜板包括：
第一铜层，固定于所述逆变模块底部；
陶瓷层，设置于所述第一铜层上方；
第二铜层，设置于所述陶瓷层上方。
其中，所述第二铜层上设置有电路衬底。
其中，所述陶瓷覆铜板采用高温烧结的方法组装。
其中，所述封装材料为塑料。
其中，所述金属丝为铝丝。
其中，所述金属丝通过超声键合技术进行连接。
其中，所述逆变模块的电路功能由所述第二铜层上的所述电路衬底、所述MOSFET芯片的位置和所述金属丝走线实现。
其中，所述金属端子数量为15。
其中，所述塑封时预留2个定位孔。
有益效果：采用集成MOSFET模块可提高产品的集成度，使定位安装更加便捷；使芯片排列更致密，减少了占用面积。
附图说明
图1本发明模块成品示意图；
图2本发明模块结构示意图；
图3本发明模块内部结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
下面结合附图1、2、3和具体实施例对本发明作进一步说明，但不作为本发明的限定。
一种高集成度的功率MOSFET逆变模块，应用于小功率逆变领域，其特征在于，所述逆变模块包括陶瓷覆铜板1和MOSFET芯片2，所述陶瓷覆铜板1与所述MOSFET芯片2通过铝丝3相连接，所述陶瓷覆铜板1连接有15个金属端子4，所述陶瓷覆铜板1、所述MOSFET芯片2和所述金属端子4使用塑封料5进行灌封。
上述技术方案中，采用集成MOSFET模块可提高产品的集成度，使定位安装更加便捷；使芯片排列更致密，减少了占用面积。采用陶瓷覆铜板作为导热材料，提高了产品的蓄热能力，使工作时的温度上升曲线更加平滑，有效提高产品稳定性。
在一个较佳的实施例中，如图2所示，所述逆变模块的陶瓷覆铜板由铜层6、陶瓷层7、铜层8采用高温烧结技术进行连接。
上述技术方案中，在陶瓷覆铜板中使用陶瓷作为绝缘层，使产品成为绝缘型产品，杜绝了分立器产品不绝缘引起的安全风险。
在铜层8上采用例如刻蚀技术制成电路衬底。使用焊料9将MOSFET芯片2固定在铜层8上。随后，采用例如超声键合技术，采用例如铝丝3作为连接线，将MOSFET芯片2正面与铜层8上的设计位置相连接。
上述技术方案中，采用集成MOSFET模块设计，使芯片排列更致密，减少了占用空间。
在一个较佳的实施例中，连接完毕的装置通过铜层8的形状、MOSFET芯片2的位置和铝丝3的走线实现三相逆变电路，并通过15个金属端子4将对应电性能输入输出端口引出。
上述技术方案中，通过内部电路设计，减少了引出端子的数量，使电路更加简洁。
内部结构连接完毕后，采用例如塑封料5对整个结构进行封装，露出一部分金属端子4，并在外部形成两个螺丝固定孔10。
上述技术方案中，提高了产品的集成度，使定位安装时更加方便快捷。
以上所述仅为本发明较佳的实施例，并非因此限制本发明的实施方式及保护范围，对于本领域技术人员而言，应当能够意识到凡运用本发明说明书及图示内容所作出的等同替换和显而易见的变化所得到的方案，均应当包含在本发明的保护范围内。

Claims (10)

1.一种高集成度的功率MOSFET逆变模块，应用于小功率逆变领域，其特征在于，所述逆变模块包括陶瓷覆铜板和MOSFET芯片，所述陶瓷覆铜板与所述MOSFET芯片通过金属丝相连接，所述陶瓷覆铜板连接有若干金属端子，所述陶瓷覆铜板、所述MOSFET芯片和所述金属端子使用封装材料进行灌封。
2.如权利要求1所述逆变模块，其特征在于，所述陶瓷覆铜板包括：
第一铜层，固定于所述逆变模块底部；
陶瓷层，设置于所述第一铜层上方；
第二铜层，设置于所述陶瓷层上方。
3.如权利要求2所述逆变模块，其特征在于，所述第二铜层上设置有电路衬底。
4.如权利要求2所述逆变模块，其特征在于，所述陶瓷覆铜板采用高温烧结的方法组装。
5.如权利要求1所述逆变模块，其特征在于，所述封装材料为塑料。
6.如权利要求1所述逆变模块，其特征在于，所述金属丝为铝丝。
7.如权利要求6所述逆变模块，其特征在于，所述金属丝通过超声键合技术进行连接。
8.如权利要求3所述逆变模块，其特征在于，所述逆变模块的电路功能由所述第二铜层上的所述电路衬底、所述MOSFET芯片的位置和所述金属丝走线实现。
9.如权利要求1所述逆变模块，其特征在于，所述金属端子数量为15。
10.如权利要求1所述逆变模块，其特征在于，所述灌封时预留2个定位孔。
CN201711160732.7A 2017-11-20 2017-11-20 一种高集成度的功率mosfet逆变模块 Pending CN107946272A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
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CN112366196A (zh) * 2020-10-29 2021-02-12 珠海格力电器股份有限公司 引脚结构及智能功率模块

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CN206250185U (zh) * 2016-11-24 2017-06-13 敦南微电子（无锡）有限公司 高导热焊线封装桥式整流器

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US20080136015A1 (en) * 2006-12-07 2008-06-12 Fairchild Korea Semiconductor, Ltd. High power semiconductor device
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CN203607394U (zh) * 2013-12-10 2014-05-21 江苏宏微科技股份有限公司 功率集成模块
CN206250185U (zh) * 2016-11-24 2017-06-13 敦南微电子（无锡）有限公司 高导热焊线封装桥式整流器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112366196A (zh) * 2020-10-29 2021-02-12 珠海格力电器股份有限公司 引脚结构及智能功率模块

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