CN107922819B - 用于有机膜的化学机械研磨研浆组成物、其制备方法以及使用其的研磨有机膜的方法 - Google Patents

用于有机膜的化学机械研磨研浆组成物、其制备方法以及使用其的研磨有机膜的方法 Download PDF

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Publication number
CN107922819B
CN107922819B CN201680047980.8A CN201680047980A CN107922819B CN 107922819 B CN107922819 B CN 107922819B CN 201680047980 A CN201680047980 A CN 201680047980A CN 107922819 B CN107922819 B CN 107922819B
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China
Prior art keywords
organic film
chemical mechanical
mechanical polishing
polishing slurry
slurry composition
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CN201680047980.8A
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English (en)
Chinese (zh)
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CN107922819A (zh
Inventor
都均奉
金东珍
郑荣哲
兪龙植
崔正敏
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Samsung SDI Co Ltd
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Samsung SDI Co Ltd
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Publication of CN107922819A publication Critical patent/CN107922819A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201680047980.8A 2015-08-21 2016-07-21 用于有机膜的化学机械研磨研浆组成物、其制备方法以及使用其的研磨有机膜的方法 Active CN107922819B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2015-0118245 2015-08-21
KR1020150118245A KR101900540B1 (ko) 2015-08-21 2015-08-21 유기막용 ｃｍｐ 슬러리 조성물, 그 제조방법, 및 이를 이용한 유기막 연마 방법
PCT/KR2016/007937 WO2017034157A1 (ko) 2015-08-21 2016-07-21 유기막용 ｃｍｐ 슬러리 조성물, 그 제조방법, 및 이를 이용한 유기막 연마 방법

Publications (2)

Publication Number Publication Date
CN107922819A CN107922819A (zh) 2018-04-17
CN107922819B true CN107922819B (zh) 2020-10-23

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CN201680047980.8A Active CN107922819B (zh) 2015-08-21 2016-07-21 用于有机膜的化学机械研磨研浆组成物、其制备方法以及使用其的研磨有机膜的方法

Country Status (4)

Country Link
KR (1) KR101900540B1 (ko)
CN (1) CN107922819B (ko)
TW (1) TWI618791B (ko)
WO (1) WO2017034157A1 (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1556840A (zh) * 2001-09-24 2004-12-22 稀土盐/氧化剂为基础的化学-机械抛光方法
WO2014171766A1 (ko) * 2013-04-17 2014-10-23 제일모직 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6830503B1 (en) * 2002-01-11 2004-12-14 Cabot Microelectronics Corporation Catalyst/oxidizer-based CMP system for organic polymer films
JP2004128211A (ja) * 2002-10-02 2004-04-22 Toshiba Corp 樹脂粒子を用いた半導体基板上の有機膜の研磨方法とスラリー
JP4868840B2 (ja) * 2005-11-30 2012-02-01 Ｊｓｒ株式会社 半導体装置の製造方法
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
KR101659144B1 (ko) * 2013-04-17 2016-09-23 제일모직주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1556840A (zh) * 2001-09-24 2004-12-22 稀土盐/氧化剂为基础的化学-机械抛光方法
WO2014171766A1 (ko) * 2013-04-17 2014-10-23 제일모직 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

Also Published As

Publication number Publication date
TW201715015A (zh) 2017-05-01
WO2017034157A1 (ko) 2017-03-02
CN107922819A (zh) 2018-04-17
KR20170023362A (ko) 2017-03-03
TWI618791B (zh) 2018-03-21
KR101900540B1 (ko) 2018-09-20

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