CN107910436A - A kind of preparation method of complex phase multi-iron material - Google Patents
A kind of preparation method of complex phase multi-iron material Download PDFInfo
- Publication number
- CN107910436A CN107910436A CN201711334594.XA CN201711334594A CN107910436A CN 107910436 A CN107910436 A CN 107910436A CN 201711334594 A CN201711334594 A CN 201711334594A CN 107910436 A CN107910436 A CN 107910436A
- Authority
- CN
- China
- Prior art keywords
- thin film
- substrate
- ferroelectric
- ferromagnetic thin
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/80—Constructional details
- H10N35/85—Magnetostrictive active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N35/00—Magnetostrictive devices
- H10N35/01—Manufacture or treatment
Abstract
The present invention relates to a kind of preparation method of complex phase multi-iron material.The present invention is on substrate or applying electric field makes ferroelectric substrate produce stress predeformation, or applies tension or compression generation predeformation in ferroelectric substrate by mechanical device；Ferromagnetic thin film is being grown by the methods of pulsed laser deposition, magnetron sputtering or molecular beam epitaxy on the ferroelectric thin film substrate of predeformation；After the completion of ferromagnetic thin film preparation, the electric field or mechanical device in ferroelectric substrate are removed, obtains complex phase multi-iron material；Ferroelectric substrate can not become original form again again under the constraint of ferromagnetic thin film, thus stress is produced in interface, and the magnetism of ferromagnetic thin film is regulated and controled by the stress.Prestressed presence in the complex phase multi-iron material that the present invention obtains so that less external electric field may change the magnetized state of ferromagnetic thin film, reduce response field.
Description
Technical field
The present invention relates to a kind of preparation method of complex phase multi-iron material, belong to field of material preparation.
Background technology
In modern science and technology, magnetic material and ferroelectric material have very extensive and important application, have penetrated into us
The various pieces of daily life.With the development of science and technology and the requirement to device miniaturization, multifunction, people are natural
And it is right expect two kinds of properties being incorporated among same material, obtain has magnetic and ferroelectric material at the same time.And material
Intercouple between magnetism and ferroelectricity in material, it, to magnetic regulation and control, is new prototype to ferroelectricity or electric field to realize magnetic field
The storage mode that device such as autotelegraph magnetic is read provides may.
The Schmid of University of Geneva proposed the concept of multi-ferroic material in 1994 first, it refers in the material
There are two or more iron, such as ferroelectricity, ferromagnetic, iron bullet at the same time.However, up to the present really ferromagnetic ferroelectricity coexists
Single-phase compounds it is considerably less, the single phase multi-iron material largely studied is the material for having anti-ferromagnetism and spontaneous electric polarization.
Ferroelectric-ferromagnetic is difficult to coexist in monophase materials, and its magnetoelectric effect is weaker, limits their practical application.But
By ferromagnetic material and ferroelectric material, as certain way, the composite material with reference to obtained from is referred to as complex phase multi-iron material.
Magneto-electric coupled in the more iron of complex phase needs intermediate physical parameter, is transmitted by the interface between two-phase.Piezoelectricity
Complicated utilization between material and magnetostriction materials is stress transfer between two-phase, since product effect result in magnetoelectricity
Coupling.Ferroelectric material can produce strain under applied voltage（Inverse piezoelectric effect）, and voltage can be produced under impressed pressure（Piezoelectricity
Effect）；Ferromagnetic material can produce strain under externally-applied magnetic field（Magnetostrictive effect）, and magnetizing under impressed pressure to become
Change（Piezomagnetism）.If ferroelectric material and ferromagnetic material is compound in some way, such as block Particles dispersed system, iron
Ferroelectric magnetic sheet bonds the layer structure of composition and ferromagnetic thin film prepares hetero-junctions formed on the substrate of piezoelectricity etc., leads to
Cross extra electric field（Magnetic field）Strain is produced to be delivered in another phase so as to magnetism via interface（Polarization）Have an impact, realize electricity
Field regulation and control are magnetic or magnetic field regulates and controls electric polarization.
Complex phase multi-iron material can be divided into according to the mode of communicating between two-phase：0-3 type Particles dispersed systems, 2-2 type layers
Shape compound system and 1-3 type nano-pillar compound systems.Wherein 2-2 types lamellar composite system refers to ferromagnetic and ferroelectric one
One layer of layer is deposited on substrate, either directly ferromagnetic layer is grown in ferroelectric substrate or will be ferromagnetic with ferroelectric material high temperature
Sintering connects the multi-iron material of composition.This complex method can show larger magnetoelectric effect.Recent complex phase
More iron develop along the direction of more iron hetero-junctions, and ferromagnetic layer is grown in ferroelectric substrate, or by ferroelectricity on nanoscale
With ferromagnetic material is compound prepares more iron tunnels section, research multi-iron material interface is magnetic, the coupling between ferroelectricity and transport property
Close.
But in the research of current multiferroic heterojunction structure the automatically controlled magnetic effect of generally existing it is weak, it is necessary to regulation and control field intensity it is high
The shortcomings of, therefore the preparation method of new hetero-junction thin-film is developed, forceful electric power control magnetic effect and low-response field etc. are obtained as working as
Business is anxious.
The content of the invention
It is an object of the invention to provide a kind of preparation method of complex phase multi-iron material.
The present invention makes ferroelectric substrate that predeformation occur by applying electric field or mechanical device, then prepares complex phase on substrate
Multi-iron material, removes electric field or mechanical device after the completion of preparation, ferroelectric substrate can not become again again under the constraint of ferromagnetic thin film
Original form, thus stress is produced in interface, the magnetism of ferromagnetic thin film is regulated and controled by the stress.
The present invention's concretely comprises the following steps：
1）Substrate selects
It is ferroelectric substrate material to select one kind in PMN-PT, BFO, PZT, BTO, PTO, PZN-PT；
2）Substrate prestressing force loads
By step 1）In ferroelectric substrate material be fixed in membrane equipment, or apply electric field make ferroelectric substrate produce stress become in advance
Shape, or apply tension or compression generation predeformation in ferroelectric substrate by mechanical device；
3）It is prepared by ferromagnetic thin film
Grown on the ferroelectric thin film substrate of predeformation by the methods of pulsed laser deposition, magnetron sputtering or molecular beam epitaxy
Ferromagnetic thin film；
The ferromagnetic thin film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe, CoFe2O4、Fe3O4, in LaSrMnO one
Kind；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetic thin film preparation, removing step 2）In be applied to electric field or mechanical device in ferroelectric substrate, obtain
Complex phase multi-iron material；Ferroelectric substrate can not become original form again again under the constraint of ferromagnetic thin film, thus be produced in interface
Stress, the magnetism of ferromagnetic thin film are regulated and controled by the stress.
Beneficial effects of the present invention：Make ferroelectric substrate that predeformation occur by applying electric field or mechanical device, it is more in complex phase
After the completion of prepared by iron material, electric field or mechanical device are removed, ferroelectric substrate can not become original again again under the constraint of ferromagnetic thin film
Carry out shape, thus stress is produced in interface, the magnetism of ferromagnetic thin film is regulated and controled by the stress；Subsequently again by applying electric field
When studying its automatically controlled magnetic effect, stress and prestressing force existing for script is superimposed in complex phase multi-iron material that electric field produces, produce
Combined stress the magnetized state of ferromagnetic thin film is changed, realize the technique effect of automatically controlled magnetic；Due to the more iron materials of complex phase
Prestressed presence in material so that less external electric field may change the magnetized state of ferromagnetic thin film, reduce response field.
Embodiment
With reference to embodiment, the present invention will be described in detail, so as to more fully understand the purpose of the present invention, feature and
Advantage.Although the present invention is described with reference to the specific embodiment, it is not intended that the invention be limited to described
Specific embodiment.On the contrary, the embodiment that can be included in the protection domain defined in the claims in the present invention is carried out
Replacement, improvement and equivalent embodiment, belong to protection scope of the present invention.For the technological parameter not marked especially,
Can routinely technology it carry out.
The present invention's concretely comprises the following steps：
1）Substrate selects
It is ferroelectric substrate material to select one kind in PMN-PT, BFO, PZT, BTO, PTO, PZN-PT；
2）Substrate prestressing force loads
By step 1）In ferroelectric substrate material be fixed in membrane equipment, or apply electric field make ferroelectric substrate produce stress become in advance
Shape, or apply tension or compression generation predeformation in ferroelectric substrate by mechanical device；
3）It is prepared by ferromagnetic thin film
Grown on the ferroelectric thin film substrate of predeformation by the methods of pulsed laser deposition, magnetron sputtering or molecular beam epitaxy
Ferromagnetic thin film；
The ferromagnetic thin film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe, CoFe2O4、Fe3O4, in LaSrMnO one
Kind；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetic thin film preparation, removing step 2）In be applied to electric field or mechanical device in ferroelectric substrate, obtain
Complex phase multi-iron material；Ferroelectric substrate can not become original form again again under the constraint of ferromagnetic thin film, thus be produced in interface
Stress, the magnetism of ferromagnetic thin film are regulated and controled by the stress.
On compound multi-iron material apply electric field study its automatically controlled magnetic effect when, electric field produce stress and in the more iron of complex phase
Prestressing force existing for script is superimposed in material, and the combined stress of generation makes the magnetized state of ferromagnetic thin film change, and is realized
The technique effect of automatically controlled magnetic.
Embodiment 1：
Step is：
1）Substrate selects
It is ferroelectric substrate material to select PMN-PT；
2）Substrate prestressing force loads
By step 1）In PMN-PT ferroelectric substrate materials be fixed in pulsed laser deposition equipment, apply electric field make ferroelectric substrate
Produce stress predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetic Fe film is grown by pulse laser sediment method on the PMN-PT ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetic Fe film preparation, removing step 2）In be applied to electric field in PMN-PT ferroelectric substrates, answered
Phase multi-iron material；PMN-PT ferroelectric substrates can not become original form again again under the constraint of ferromagnetic Fe film, thus at interface
Place produces stress, and the magnetism of ferromagnetic Fe film is regulated and controled by the stress.
Embodiment 2：
1）Substrate selects
It is ferroelectric substrate material to select BFO；
2）Substrate prestressing force loads
By step 1）In BFO ferroelectric substrate materials be fixed in magnetron sputtering apparatus, by mechanical device in ferroelectric substrate
Apply tension and produce predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism Co films are grown by magnetically controlled sputter method on the BFO ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism Co film preparations, removing step 2）In be applied to mechanical device in ferroelectric substrate, obtain complex phase
Multi-iron material；BFO ferroelectric substrates can not become original form again again under the constraint of ferromagnetism Co films, thus be produced in interface
Stress, the magnetism of ferromagnetism Co films are regulated and controled by the stress.
Embodiment 3：
1）Substrate selects
It is ferroelectric substrate material to select PZT；
2）Substrate prestressing force loads
By step 1）In PZT ferroelectric substrate materials be fixed in molecular beam epitaxial device, by mechanical device in ferroelectric substrate
Upper application compression produces predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism Ni films are grown by molecular beam epitaxial method on the PZT ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism Ni film preparations, removing step 2）In be applied to mechanical device in PZT ferroelectric substrates, answered
Phase multi-iron material；PZT ferroelectric substrates can not become original form again again under the constraint of ferromagnetism Ni films, thus be produced in interface
Raw stress, the magnetism of ferromagnetism Ni films are regulated and controled by the stress.
Embodiment 4：
1）Substrate selects
It is ferroelectric substrate material to select BTO；
2）Substrate prestressing force loads
By step 1）In BTO ferroelectric substrate materials be fixed in pulsed laser deposition equipment, apply electric field produce ferroelectric substrate
Raw stress predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism TbDyFe films are grown by pulse laser sediment method on the BTO ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism TbDyFe film preparations, removing step 2）In be applied to electric field in BTO ferroelectric substrates, answered
Phase multi-iron material；BTO ferroelectric substrates can not become original form again again under the constraint of ferromagnetism TbDyFe films, thus at interface
Place produces stress, and the magnetism of ferromagnetism TbDyFe films is regulated and controled by the stress.
Embodiment 5：
1）Substrate selects
It is ferroelectric substrate material to select PTO；
2）Substrate prestressing force loads
By step 1）In PTO ferroelectric substrate materials be fixed in magnetron sputtering apparatus, apply electric field make ferroelectric substrate produce should
Power predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism NiMnGa films are grown by magnetically controlled sputter method on the PTO ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism NiMnGa film preparations, removing step 2）In be applied to electric field in ferroelectric substrate, obtain complex phase
Multi-iron material；PTO ferroelectric substrates can not become original form again again under the constraint of ferromagnetism NiMnGa films, thus in interface
Stress is produced, the magnetism of ferromagnetism NiMnGa films is regulated and controled by the stress.
Embodiment 6：
1）Substrate selects
It is ferroelectric substrate material to select PZN-PT；
2）Substrate prestressing force loads
By step 1）In PZN-PT ferroelectric substrate materials be fixed in molecular beam epitaxial device, by mechanical device ferroelectricity serve as a contrast
Apply compression on bottom and produce predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism CoFe films are grown by method on the PZN-PT ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism CoFe film preparations, removing step 2）In be applied to mechanical device in ferroelectric substrate, answered
Phase multi-iron material；PZN-PT ferroelectric substrates can not become original form again again under the constraint of ferromagnetism CoFe films, thus on boundary
Stress is produced at face, the magnetism of ferromagnetism CoFe films is regulated and controled by the stress.
Embodiment 7：
1）Substrate selects
It is ferroelectric substrate material to select PMN-PT；
2）Substrate prestressing force loads
By step 1）In PMN-PT ferroelectric substrate materials be fixed in molecular beam epitaxial device, by mechanical device ferroelectricity serve as a contrast
Apply tension on bottom and produce predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism CoFe is grown by molecular beam epitaxial method on the PMN-PT ferroelectric thin film substrates of predeformation2O4Film；
4）Obtain complex phase multi-iron material
In ferromagnetism CoFe2O4After the completion of film preparation, removing step 2）In be applied to mechanical device in ferroelectric substrate, obtain
Complex phase multi-iron material；PMN-PT ferroelectric substrates are in ferromagnetism CoFe2O4Original form can not be become under the constraint of film again again, thus
Stress, ferromagnetism CoFe are produced in interface2O4The magnetism of film is regulated and controled by the stress.
Embodiment 8：
1）Substrate selects
It is ferroelectric substrate material to select PZT；
2）Substrate prestressing force loads
By step 1）In PZT ferroelectric substrate materials be fixed in magnetron sputtering apparatus, apply electric field make ferroelectric substrate produce should
Power predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetic Fe is grown by magnetically controlled sputter method on the PZT ferroelectric thin film substrates of predeformation3O4Film；
4）Obtain complex phase multi-iron material
In ferromagnetic Fe3O4After the completion of film preparation, removing step 2）In be applied to electric field arrangement in ferroelectric substrate, answered
Phase multi-iron material；PZT ferroelectric substrates are in ferromagnetic Fe3O4Original form can not be become under the constraint of film again again, thus in interface
Produce stress, ferromagnetic Fe3O4The magnetism of film is regulated and controled by the stress.
Embodiment 9：
1）Substrate selects
It is ferroelectric substrate material to select BFO；
2）Substrate prestressing force loads
By step 1）In BFO ferroelectric substrate materials be fixed in magnetron sputtering apparatus, apply electric field make ferroelectric substrate produce should
Power predeformation；
3）It is prepared by ferromagnetic thin film
Ferromagnetism LaSrMnO films are grown by magnetically controlled sputter method on the BFO ferroelectric thin film substrates of predeformation；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetism LaSrMnO film preparations, removing step 2）In be applied to electric field in ferroelectric substrate, obtain complex phase
Multi-iron material；BFO ferroelectric substrates can not become original form again again under the constraint of ferromagnetism LaSrMnO films, thus at interface
Place produces stress, and the magnetism of ferromagnetism LaSrMnO films is regulated and controled by the stress.
Claims (1)
1. a kind of preparation method of complex phase multi-iron material, it is characterised in that concretely comprise the following steps：
1）Substrate selects
It is ferroelectric substrate material to select one kind in PMN-PT, BFO, PZT, BTO, PTO, PZN-PT；
2）Substrate prestressing force loads
By step 1）In ferroelectric substrate material be fixed in membrane equipment, or apply electric field make ferroelectric substrate produce stress become in advance
Shape, or apply tension or compression generation predeformation in ferroelectric substrate by mechanical device；
3）It is prepared by ferromagnetic thin film
Grown on the ferroelectric thin film substrate of predeformation by the methods of pulsed laser deposition, magnetron sputtering or molecular beam epitaxy
Ferromagnetic thin film；
The ferromagnetic thin film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe, CoFe2O4、Fe3O4, in LaSrMnO one
Kind；
4）Obtain complex phase multi-iron material
After the completion of ferromagnetic thin film preparation, removing step 2）In be applied to electric field or mechanical device in ferroelectric substrate, obtain
Complex phase multi-iron material；Ferroelectric substrate can not become original form again again under the constraint of ferromagnetic thin film, thus be produced in interface
Stress, the magnetism of ferromagnetic thin film are regulated and controled by the stress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711334594.XA CN107910436B (en) | 2017-12-14 | 2017-12-14 | Preparation method of complex-phase multiferroic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711334594.XA CN107910436B (en) | 2017-12-14 | 2017-12-14 | Preparation method of complex-phase multiferroic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107910436A true CN107910436A (en) | 2018-04-13 |
| CN107910436B CN107910436B (en) | 2021-01-26 |
Family
ID=61865385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711334594.XA Active CN107910436B (en) | 2017-12-14 | 2017-12-14 | Preparation method of complex-phase multiferroic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107910436B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108539008A (en) * | 2018-05-17 | 2018-09-14 | 西北工业大学 | A kind of unleaded Nanopiezoelectric generator and preparation method based on bismuth ferrous acid bismuth compound |
| CN108598255A (en) * | 2018-04-24 | 2018-09-28 | 湘潭大学 | A kind of more iron hetero-junctions and preparation method thereof |
| CN109307850A (en) * | 2018-08-30 | 2019-02-05 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN110137343A (en) * | 2019-05-15 | 2019-08-16 | 南京大学 | A method of magnetic Skyrmion is generated and wiped using electric field |
| CN110228822A (en) * | 2019-05-17 | 2019-09-13 | 华中科技大学 | A kind of Ferromagnetic/Antiferromagnetic hetero-junctions and its preparation with exchange bias effect |
| CN110534143A (en) * | 2019-05-15 | 2019-12-03 | 南京大学 | A kind of multi-electrode wiring method of the racing track memory based on magnetic lattice pine torch |
| CN112725741A (en) * | 2020-12-09 | 2021-04-30 | 湘潭大学 | Preparation method of flexible ferroelectric film loaded by in-situ stress |
| CN113698194A (en) * | 2021-06-16 | 2021-11-26 | 中国科学院深圳先进技术研究院 | Flexible self-supporting BaTiO3-CoFe2O4Multiferroic self-assembled nanostructure and preparation method thereof |
| CN116018050A (en) * | 2023-01-09 | 2023-04-25 | 中国矿业大学 | Multiferroic heterostructure based on copper ferrite and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489227A (en) * | 2003-07-04 | 2004-04-14 | �Ϻ���ͨ��ѧ | Magne to electric composite material and manufacturing method thereof |
| CN103280521A (en) * | 2013-05-03 | 2013-09-04 | 陕西师范大学 | Two magnetoelectric composite materials and preparation method thereof |
-
2017
- 2017-12-14 CN CN201711334594.XA patent/CN107910436B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489227A (en) * | 2003-07-04 | 2004-04-14 | �Ϻ���ͨ��ѧ | Magne to electric composite material and manufacturing method thereof |
| CN103280521A (en) * | 2013-05-03 | 2013-09-04 | 陕西师范大学 | Two magnetoelectric composite materials and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| MENGHUI LI ET AL.: ""Enhanced magnetoelectric effect in self-stressed multi-push-pull mode Metglas/Pb(Zr,Ti)O3/Metglas laminates"", 《APPLIED PHYSICS LETTERS》 * |
| NGUYEN N. PHUOC AND C.K. ONG: ""Electrical manipulation of electromagnetic properties of FeGa/[Pb(Mg1/3Nb2/3)O3]0.68–[PbTiO3]0.32(011) multiferroic heterostructures"", 《J MATER SCI: MATER ELECTRON》 * |
| 刘愉快 等: ""多铁性异质结研究进展"", 《华南师范大学学报(自然科学版)》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598255A (en) * | 2018-04-24 | 2018-09-28 | 湘潭大学 | A kind of more iron hetero-junctions and preparation method thereof |
| CN108539008A (en) * | 2018-05-17 | 2018-09-14 | 西北工业大学 | A kind of unleaded Nanopiezoelectric generator and preparation method based on bismuth ferrous acid bismuth compound |
| CN109307850A (en) * | 2018-08-30 | 2019-02-05 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN110137343A (en) * | 2019-05-15 | 2019-08-16 | 南京大学 | A method of magnetic Skyrmion is generated and wiped using electric field |
| CN110534143A (en) * | 2019-05-15 | 2019-12-03 | 南京大学 | A kind of multi-electrode wiring method of the racing track memory based on magnetic lattice pine torch |
| CN110228822A (en) * | 2019-05-17 | 2019-09-13 | 华中科技大学 | A kind of Ferromagnetic/Antiferromagnetic hetero-junctions and its preparation with exchange bias effect |
| CN112725741A (en) * | 2020-12-09 | 2021-04-30 | 湘潭大学 | Preparation method of flexible ferroelectric film loaded by in-situ stress |
| CN112725741B (en) * | 2020-12-09 | 2024-03-08 | 湘潭大学 | Preparation method of in-situ stress loaded flexible ferroelectric film |
| CN113698194A (en) * | 2021-06-16 | 2021-11-26 | 中国科学院深圳先进技术研究院 | Flexible self-supporting BaTiO3-CoFe2O4Multiferroic self-assembled nanostructure and preparation method thereof |
| CN116018050A (en) * | 2023-01-09 | 2023-04-25 | 中国矿业大学 | Multiferroic heterostructure based on copper ferrite and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107910436B (en) | 2021-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107910436A (en) | A kind of preparation method of complex phase multi-iron material | |
| Shirsath et al. | Single-crystal-like textured growth of CoFe2O4 thin film on an amorphous substrate: A self-bilayer approach | |
| US5958154A (en) | High-strain, magnetic field-controlled actuator materials | |
| US20080143195A1 (en) | Magnetomechanical transducer, and apparatus and methods for harvesting energy | |
| US9852835B2 (en) | Oxide interface displaying electronically controllable ferromagnetism | |
| Liu et al. | Electric-field control of magnetism in Co40Fe40B20/(1-x) Pb (Mg1/3Nb2/3) O3-xPbTiO3 multiferroic heterostructures with different ferroelectric phases | |
| Kuo et al. | Optimization of magnetoelectricity in piezoelectric–magnetostrictive bilayers | |
| CN109103329A (en) | A kind of automatically controlled spin valve structure and non-volatile memory device | |
| Begué et al. | Strain-mediated giant magnetoelectric coupling in a crystalline multiferroic heterostructure | |
| CN101982893A (en) | Ni-Mn based ferromagnetic shape memory alloy/piezoelectric composite and application in magnetoelectric effect thereof | |
| CN102071399B (en) | All-perovskite multiferroic magnetoelectric compound film and preparation method thereof | |
| CN103014625B (en) | Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3 | |
| CN109244132A (en) | Transistor and Magnetic Sensor based on mangneto piezoelectricity gesture | |
| CN106033691A (en) | High-tunability linear adjustable inductor and manufacturing method thereof | |
| Babu et al. | Magnetic and magnetoelectric characterization of Ni0. 93Co0. 02Mn0. 05Fe1. 95O4 and PZT composites | |
| CN107799650A (en) | A kind of ferroelectricity hetero-junctions and preparation method thereof and automatically controlled microwave electron component | |
| Chen et al. | Electric field-modulated Hall resistivity and magnetization in magnetoelectric Ni–Mn–Co–Sn/PMN–PT laminate | |
| CN108022750B (en) | A kind of preparation method of multiferroic hetero-junction thin-film | |
| Ishimaru et al. | Microstructure analysis of high coercivity PLD-Made Nd-Fe-B thick-film improved by Tb-coating-diffusion treatment | |
| Muchenik et al. | Prediction of extrinsic charge, voltage, and work-conversion factors for laminated magnetoelectric composites | |
| CN109994599A (en) | Piezoelectric type magnetic RAM and preparation method thereof | |
| CN110703167B (en) | Obtaining Fe3GeTe2Method of magnetostriction coefficient of | |
| Eum et al. | Thermal treatment effect on the magnetoelectric properties of (Ni0. 5Zn0. 5) Fe2O4/Pt/Pb (Zr0. 3Ti0. 7) O3 heterostructured thin films | |
| Xu et al. | Fabrication and magnetoelectric effect of 1–3 type composites with microscale (K, Na) NbO3-based Pb-free piezoceramic pillars embedded in CoFe2O4-epoxy matrix | |
| Kaczkowski et al. | DFT+ U calculations of transition metal doped AlN |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information | ||
| CB03 | Change of inventor or designer information |
Inventor after: Li Jing Inventor after: Wang Xinqing Inventor after: Ge Hongliang Inventor after: Jia Hanlin Inventor after: Peng Xiaoling Inventor after: Yang Yanting Inventor after: Xu Jingcai Inventor after: Wang Panfeng Inventor after: Jin Hongxiao Inventor after: Jin Dingfeng Inventor after: Hong Bo Inventor before: Li Jing Inventor before: Ge Hongliang Inventor before: Peng Xiaoling Inventor before: Yang Yanting Inventor before: Xu Jingcai Inventor before: Wang Panfeng Inventor before: Jin Hongxiao Inventor before: Jin Dingfeng Inventor before: Hong Bo Inventor before: Wang Xinqing |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |