CN107910436B - Preparation method of complex-phase multiferroic material - Google Patents
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Abstract
The invention relates to a preparation method of a complex phase multiferroic material. The invention applies electric field on the substrate to make the ferroelectric substrate generate stress pre-deformation, or applies tensile stress or compressive stress on the ferroelectric substrate through mechanical device to generate pre-deformation; growing a ferromagnetic film on the pre-deformed ferroelectric film substrate by methods such as pulsed laser deposition, magnetron sputtering or molecular beam epitaxy; after the preparation of the ferromagnetic thin film is finished, removing an electric field or a mechanical device on the ferroelectric substrate to obtain a complex phase multiferroic material; the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic thin film, so that stress is generated at the interface, and the magnetism of the ferromagnetic thin film is regulated and controlled by the stress. The pre-stress of the complex phase multiferroic material obtained by the invention can change the magnetization state of the ferromagnetic film with a small external electric field, thereby reducing the response field.
Description
Technical Field
The invention relates to a preparation method of a complex phase multiferroic material, belonging to the field of material preparation.
Background
In modern technology, magnetic and ferroelectric materials have a very wide range of important applications, which have penetrated into various parts of our daily lives. With the development of scientific technology and the demand for miniaturization and multi-functionalization of devices, it is naturally thought that two properties are integrated into the same material to obtain a material having both magnetic and ferroelectric properties. And the magnetism and ferroelectricity in the material are mutually coupled, so that the ferroelectricity of a magnetic field or the magnetism of an electric field is regulated and controlled, and the possibility is provided for a new prototype device such as a storage mode of electromagnetic writing and reading.
Schmid, Rinevara university, Switzerland, in 1994, first proposed the concept of multiferroic materials, which means that two or more ferroelectrics, such as ferroelectrics, ferromagnetics, ferrobullets, etc., are present in a material at the same time. However, so far, true ferroelectrics coexist with very few single-phase compounds, and most of the studied single-phase multiferroic materials are materials having antiferromagnetic properties and spontaneous electric polarization. The single-phase materials have the defects of difficult coexistence of ferromagnetism and weak magnetoelectric coupling effect, thereby limiting the practical application of the materials. However, a composite material obtained by combining a ferromagnetic material and a ferroelectric material in a certain manner is called a complex phase multiferroic material.
The magnetoelectric coupling in complex phase multiferroic requires intermediate physical parameters and is transmitted through the interface between two phases. The compounding between piezoelectric and magnetostrictive materials utilizes the transfer of stress between the two phases, resulting in magnetoelectric coupling due to the product effect. The ferroelectric material generates strain under an applied voltage (inverse piezoelectric effect), and generates voltage under an applied pressure (piezoelectric effect); ferromagnetic materials are strained by an applied magnetic field (magnetostrictive effect) and change in magnetization under an applied pressure (piezomagnetic effect). If the ferroelectric material and the ferromagnetic material are compounded in a certain mode, such as a blocky particle compound system, a layered structure formed by bonding ferroelectric ferromagnetic sheets, a heterojunction formed by preparing ferromagnetic films on a piezoelectric substrate, and the like, the strain generated by an external electric field (magnetic field) is transferred to another phase through an interface to influence the magnetism (polarization), so that the electric field regulation magnetism or the magnetic field regulation electric polarization is realized.
The complex phase multiferroic material can be divided into the following components according to the communication mode between two phases: 0-3 type particle composite system, 2-2 type layered composite system and 1-3 type nano-column composite system. The 2-2 type laminated composite system is a multiferroic material formed by depositing ferromagnetic and ferroelectric substances on a substrate layer by layer, or directly growing a ferromagnetic layer on a ferroelectric substrate, or sintering and connecting the ferromagnetic and ferroelectric materials at high temperature. The composite mode can show larger magnetoelectric coupling effect. Recently, the complex phase multiferroic is developed along the direction of multiferroic heterojunction, ferromagnetic layers are grown on a ferroelectric substrate, or a ferroelectric material and a ferromagnetic material are compounded on a nanometer scale to prepare a multiferroic tunnel junction, and the coupling among magnetic properties, ferroelectric properties and transport properties at the interface of the multiferroic material is researched.
However, the defects of weak electrically-controlled magnetic effect, high required field strength regulation and control and the like generally exist in the current research of multiferroic heterojunction structures, so that the development of a novel preparation method of a heterojunction film to obtain strong electrically-controlled magnetic effect, low response field and the like becomes urgent.
Disclosure of Invention
The invention aims to provide a preparation method of a complex-phase multiferroic material.
The invention makes the ferroelectric substrate generate pre-deformation by applying an electric field or a mechanical device, then prepares the complex phase multiferroic material on the substrate, and removes the electric field or the mechanical device after the preparation is finished, the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic film, thereby generating stress at the interface, and the magnetism of the ferromagnetic film is regulated and controlled by the stress.
The method comprises the following specific steps:
1) substrate selection
Selecting one of PMN-PT, BFO, PZT, BTO, PTO and PZN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the ferroelectric substrate material in the step 1) in film making equipment, or applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation, or applying tensile stress or compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic film on the pre-deformed ferroelectric film substrate by methods such as pulsed laser deposition, magnetron sputtering or molecular beam epitaxy;
the ferromagnetic film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe2O4、Fe3O4One of LaSrMnOSeed growing;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic thin film is finished, removing the electric field or mechanical device applied to the ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic thin film, so that stress is generated at the interface, and the magnetism of the ferromagnetic thin film is regulated and controlled by the stress.
The invention has the beneficial effects that: the ferroelectric substrate is pre-deformed by applying an electric field or a mechanical device, after the complex phase multiferroic material is prepared, the electric field or the mechanical device is removed, the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic thin film, so that stress is generated at an interface, and the magnetism of the ferromagnetic thin film is regulated and controlled by the stress; when the electric control magnetic effect is researched by applying an electric field subsequently, the stress generated by the electric field is superposed with the pre-stress originally existing in the complex-phase multiferroic material, and the generated comprehensive stress changes the magnetization state of the ferromagnetic film, so that the technical effect of electric control magnetism is realized; due to the existence of the prestress in the complex phase multiferroic material, the magnetization state of the ferromagnetic film can be changed by a small external electric field, and the response field is reduced.
Detailed Description
The present invention will be described in detail with reference to the following examples in order to better understand the objects, features and advantages of the present invention. While the invention is described in conjunction with the specific embodiments, it is not intended that the invention be limited to the specific embodiments described. On the contrary, alternatives, modifications and equivalents may be made to the embodiments as may be included within the scope of the invention as defined by the appended claims. The process parameters not specifically mentioned can be carried out according to conventional techniques.
The method comprises the following specific steps:
1) substrate selection
Selecting one of PMN-PT, BFO, PZT, BTO, PTO and PZN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the ferroelectric substrate material in the step 1) in film making equipment, or applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation, or applying tensile stress or compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic film on the pre-deformed ferroelectric film substrate by methods such as pulsed laser deposition, magnetron sputtering or molecular beam epitaxy;
the ferromagnetic film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe2O4、Fe3O4And LaSrMnO;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic thin film is finished, removing the electric field or mechanical device applied to the ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic thin film, so that stress is generated at the interface, and the magnetism of the ferromagnetic thin film is regulated and controlled by the stress.
When an electric field is applied to the composite multiferroic material to study the electric control magnetic effect of the composite multiferroic material, the stress generated by the electric field is superposed with the pre-stress originally existing in the composite multiferroic material, and the generated comprehensive stress changes the magnetization state of the ferromagnetic film, thereby realizing the technical effect of electric control magnetism.
Example 1:
the method comprises the following steps:
1) substrate selection
Selecting PMN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PMN-PT ferroelectric substrate material in the step 1) in pulse laser deposition equipment, and applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic Fe film on the pre-deformed PMN-PT ferroelectric film substrate by a pulse laser deposition method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic Fe film is finished, removing the electric field applied to the PMN-PT ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; the PMN-PT ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic Fe film, so that stress is generated at the interface, and the magnetism of the ferromagnetic Fe film is regulated and controlled by the stress.
Example 2:
1) substrate selection
Selecting BFO as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the BFO ferroelectric substrate material in the step 1) in a magnetron sputtering device, and applying a tensile stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic Co film on the predeformed BFO ferroelectric film substrate by a magnetron sputtering method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic Co film is finished, removing the mechanical device applied on the ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; the BFO ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic Co film, so that stress is generated at the interface, and the magnetism of the ferromagnetic Co film is regulated and controlled by the stress.
Example 3:
1) substrate selection
Selecting PZT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PZT ferroelectric substrate material in the step 1) in molecular beam epitaxy equipment, and applying a compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic Ni film on the pre-deformed PZT ferroelectric film substrate by a molecular beam epitaxy method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic Ni film is finished, removing the mechanical device applied on the PZT ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; the PZT ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic Ni film, so that stress is generated at the interface, and the magnetism of the ferromagnetic Ni film is regulated and controlled by the stress.
Example 4:
1) substrate selection
Selecting BTO as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the BTO ferroelectric substrate material in the step 1) in pulse laser deposition equipment, and applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic TbDyFe film on the pre-deformed BTO ferroelectric film substrate by a pulse laser deposition method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic TbDyFe film is finished, removing the electric field applied to the BTO ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the BTO ferroelectric substrate cannot return to its original shape under the constraint of the ferromagnetic TbDyFe thin film, so that stress is generated at the interface, and the magnetism of the ferromagnetic TbDyFe thin film is regulated by the stress.
Example 5:
1) substrate selection
Selecting the PTO as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PTO ferroelectric substrate material in the step 1) in magnetron sputtering equipment, and applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic NiMnGa film on the pre-deformed PTO ferroelectric film substrate by a magnetron sputtering method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic NiMnGa film is finished, removing the electric field applied to the ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; the PTO ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic NiMnGa film, so that stress is generated at the interface, and the magnetism of the ferromagnetic NiMnGa film is regulated and controlled by the stress.
Example 6:
1) substrate selection
Selecting PZN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PZN-PT ferroelectric substrate material in the step 1) in molecular beam epitaxy equipment, and applying a compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic CoFe film on the pre-deformed PZN-PT ferroelectric film substrate by a method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic CoFe film is finished, removing the mechanical device applied on the ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the PZN-PT ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic CoFe film, so that stress is generated at the interface, and the magnetism of the ferromagnetic CoFe film is regulated and controlled by the stress.
Example 7:
1) substrate selection
Selecting PMN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PMN-PT ferroelectric substrate material in the step 1) in molecular beam epitaxy equipment, and applying tensile stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Ferromagnetic CoFe is grown on a pre-deformed PMN-PT ferroelectric film substrate by a molecular beam epitaxy method2O4A film;
4) obtaining the complex phase multiferroic material
In ferromagnetic CoFe2O4After the film is prepared, removing the mechanical device applied on the ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; ferromagnetic CoFe on PMN-PT ferroelectric substrate2O4Restraint of the filmThe lower layer can not return to the original shape, and thus the stress is generated at the interface, ferromagnetic CoFe2O4The magnetic properties of the film are controlled by the stress.
Example 8:
1) substrate selection
Selecting PZT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the PZT ferroelectric substrate material in the step 1) in a magnetron sputtering device, and applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation;
3) preparation of ferromagnetic films
Ferromagnetic Fe is grown on a pre-deformed PZT ferroelectric film substrate by a magnetron sputtering method3O4A film;
4) obtaining the complex phase multiferroic material
In ferromagnetic Fe3O4After the film is prepared, removing the electric field device applied on the ferroelectric substrate in the step 2) to obtain a complex phase multiferroic material; PZT ferroelectric substrate in ferromagnetic Fe3O4The film can not return to the original shape under the restraint of the film, so that stress is generated at the interface, and ferromagnetism Fe3O4The magnetic properties of the film are controlled by the stress.
Example 9:
1) substrate selection
Selecting BFO as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the BFO ferroelectric substrate material in the step 1) in a magnetron sputtering device, and applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic LaSrMnO film on the predeformed BFO ferroelectric film substrate by a magnetron sputtering method;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic LaSrMnO film is finished, removing the electric field applied to the ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the BFO ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic LaSrMnO film, so that stress is generated at the interface, and the magnetism of the ferromagnetic LaSrMnO film is regulated and controlled by the stress.
Claims (1)
1. A preparation method of a complex phase multiferroic material is characterized by comprising the following specific steps:
1) substrate selection
Selecting one of PMN-PT, BFO, PZT, BTO, PTO and PZN-PT as a ferroelectric substrate material;
2) substrate pre-stress loading
Fixing the ferroelectric substrate material in the step 1) in film making equipment, or applying an electric field to enable the ferroelectric substrate to generate stress pre-deformation, or applying tensile stress or compressive stress on the ferroelectric substrate through a mechanical device to generate pre-deformation;
3) preparation of ferromagnetic films
Growing a ferromagnetic film on the pre-deformed ferroelectric film substrate by a pulsed laser deposition, magnetron sputtering or molecular beam epitaxy method;
the ferromagnetic film is Fe, Co, Ni, TbDyFe, NiMnGa, CoFe2O4、Fe3O4And LaSrMnO;
4) obtaining the complex phase multiferroic material
After the preparation of the ferromagnetic thin film is finished, removing the electric field or mechanical device applied to the ferroelectric substrate in the step 2) to obtain a complex-phase multiferroic material; the ferroelectric substrate can not return to the original shape under the constraint of the ferromagnetic thin film, so that stress is generated at the interface, and the magnetism of the ferromagnetic thin film is regulated and controlled by the stress.
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| CN108539008A (en) * | 2018-05-17 | 2018-09-14 | 西北工业大学 | A kind of unleaded Nanopiezoelectric generator and preparation method based on bismuth ferrous acid bismuth compound |
| CN109307850B (en) * | 2018-08-30 | 2020-12-25 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN110137343B (en) * | 2019-05-15 | 2021-04-20 | 南京大学 | Method for generating and erasing magnetic skynerger by using electric field |
| CN110534143A (en) * | 2019-05-15 | 2019-12-03 | 南京大学 | A kind of multi-electrode wiring method of the racing track memory based on magnetic lattice pine torch |
| CN110228822A (en) * | 2019-05-17 | 2019-09-13 | 华中科技大学 | A kind of Ferromagnetic/Antiferromagnetic hetero-junctions and its preparation with exchange bias effect |
| CN112725741B (en) * | 2020-12-09 | 2024-03-08 | 湘潭大学 | Preparation method of in-situ stress loaded flexible ferroelectric film |
| CN113698194A (en) * | 2021-06-16 | 2021-11-26 | 中国科学院深圳先进技术研究院 | Flexible self-supporting BaTiO3-CoFe2O4Multiferroic self-assembled nanostructure and preparation method thereof |
| CN116018050A (en) * | 2023-01-09 | 2023-04-25 | 中国矿业大学 | Multiferroic heterostructure based on copper ferrite and preparation method thereof |
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