CN109103329A - A kind of automatically controlled spin valve structure and non-volatile memory device - Google Patents
A kind of automatically controlled spin valve structure and non-volatile memory device Download PDFInfo
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- CN109103329A CN109103329A CN201810929285.5A CN201810929285A CN109103329A CN 109103329 A CN109103329 A CN 109103329A CN 201810929285 A CN201810929285 A CN 201810929285A CN 109103329 A CN109103329 A CN 109103329A
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- H10N50/10—Magnetoresistive devices
Abstract
The invention discloses a kind of automatically controlled spin valve structure and non-volatile memory device, which includes: ferro-electricity single crystal substrate；Magnetic fixing layer on ferro-electricity single crystal substrate is set, and magnetic fixing layer includes first part and second part, and first part deviates from ferro-electricity single crystal one side of substrate in first part close to ferro-electricity single crystal substrate, second part setting；The nonmagnetic intermediate layer that second part deviates from ferro-electricity single crystal one side of substrate is set；The free magnetic layer that nonmagnetic intermediate layer deviates from magnetic fixing layer side is set；Cover the insulating layer of second part, nonmagnetic intermediate layer and free magnetic layer side wall；The metallic top electrode trace layer that free magnetic layer deviates from nonmagnetic intermediate layer side is set；The metal electrode of ferro-electricity single crystal substrate two sides is set.Magnetic fixing layer, nonmagnetic intermediate layer and free magnetic layer constitute spin valve structure outside face.Electric field regulation Spin Valve magnetic moments rotations and magnetic resistance change rate may be implemented in the automatically controlled spin valve structure.
Description
Technical field
The present invention relates to memory device technical fields, more specifically more particularly to a kind of automatically controlled spin valve structure and non-
Volatile memory unit.
Background technique
Current existing magnetic storage isospin electronics device (such as Spin Valve and magnetic tunnel-junction) is using magnetic field or greatly
The write-in of electric current progress data, it is clear that the disadvantages of inevitably bringing power consumption high.
Therefore, research staff always searches for using electric field and magnetic moment in non-magnetic field or current control spintronics devices
Method.
Multi-iron material is orderly because having ferroelectricity and ferromagnetic grade iron simultaneously, and has coupling effect between different iron,
Make it possible automatically controlled magnetism, can be used for designing the low-watt consumption magnetic memory device of electric field write-in.
However, common single phase multi-iron material has that room temperature magnetoelectric effect is weak, practical work can not be applied to
In industry.Then research staff pays close attention to the magneto-electric coupled strong more iron heterojunction structures in interface more, and it is different how research scientifically designs more iron
Matter structure utilizes the magnetism of electric field regulation spintronics devices based on magnetoelectric effect within the scope of micro/nano-scale.
So far, most of more iron heterojunction structures are only able to achieve regulation of the electric field to magnetic moment size, to magnetic moment direction
The regulation auxiliary for needing magnetic field and mostly automatically controlled magnetism more be it is volatile, there is no electric field may be implemented in the case where no magnetic field assists
The technology of magnetic moments rotations and magnetic resistance change rate in non-volatile regulation spintronics devices.
Summary of the invention
To solve the above problems, this is automatically controlled the present invention provides a kind of automatically controlled spin valve structure and non-volatile memory device
The non-volatile regulation Spin Valve magnetic moments rotations of electric field and magnetic resistance change rate may be implemented in spin valve structure.
To achieve the above object, the invention provides the following technical scheme:
A kind of automatically controlled spin valve structure of automatically controlled spin valve structure is based on Spin Valve and ferroelectric heterostructures, which is characterized in that
The automatically controlled spin valve structure of automatically controlled spin valve structure includes:
Ferro-electricity single crystal substrate；
Magnetic fixing layer on the ferro-electricity single crystal substrate is set, and the magnetism fixing layer includes first part and second
Part, the first part are close to ferro-electricity single crystal substrate portions, and the second part setting deviates from ferroelectricity list in first part
Brilliant one side of substrate, and the area of the first part is greater than the area of the second part；
The nonmagnetic intermediate layer that the second part deviates from the ferro-electricity single crystal one side of substrate is set；
The nonmagnetic intermediate layer is set away from the free magnetic layer of the magnetic fixing layer side；
Cover the insulating layer of the side wall of the nonmagnetic intermediate layer and the side wall of the free magnetic layer；
The metallic top electrode trace layer that the free magnetic layer deviates from the nonmagnetic intermediate layer side, the gold are set
Belong to the surface that top electrode trace layer covers the free magnetic layer and the insulating layer；
The first metal electrode and the second metal electrode of ferro-electricity single crystal substrate two sides are set；
Wherein, the magnetic fixing layer refers to magnetic moment not with the magnetic material layer for applying electric field and changing.
The free magnetic layer refers to magnetic moment with the magnetic material layer for applying electric field and changing.
The magnetism fixing layer, the nonmagnetic intermediate layer and the free magnetic layer constitute spin valve structure outside face.
The present invention also provides a kind of non-volatile memory device, the non-volatile memory device includes described in any of the above-described
Automatically controlled spin valve structure.
As can be seen from the above description, a kind of automatically controlled spin valve structure provided by the invention, magnetic in the automatically controlled spin valve structure
Property fixing layer, nonmagnetic intermediate layer and free magnetic layer constitute spin valve structure outside face, recycle the first gold medal of side polarisation
Belong to electrode and 90 ° of non-volatile rotations of free magnetic layer magnetic moment in the Spin Valve of electric field regulation may be implemented in the second metal electrode,
The non-volatile resistive state of at least six Spin Valve can also be obtained by applying different size of electric field, can apply to it is non-volatile,
Polymorphic and low-power consumption automatically controlled magnetic memory device.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of automatically controlled spin valve structure provided in an embodiment of the present invention；
Fig. 2 is that one kind provided in an embodiment of the present invention (is defined as along PMN-PT ferro-electricity single crystal substrate [010] direction at room temperature
"+" direction) apply electric field when, strain in this direction is with electric field change curve synoptic diagram；
Fig. 3 is one kind provided in an embodiment of the present invention under unpolarized O state, Co free magnetic layer and Ni magnetism fixing layer
Normalization hysteresis loop schematic diagram when magnetic field is along [100] direction；
Fig. 4 is one kind provided in an embodiment of the present invention under unpolarized O state, Co free magnetic layer and Ni magnetism fixing layer
The curve synoptic diagram that remanence ratio when magnetic field is along [100] direction changes with magnetic field angle；
Fig. 5 is one kind provided in an embodiment of the present invention under A condition, and Co free magnetic layer and Ni magnetism fixing layer are in magnetic field
Normalization hysteresis loop schematic diagram when along [100] direction；
Fig. 6 is one kind provided in an embodiment of the present invention under A condition, and Co free magnetic layer and Ni magnetism fixing layer are in magnetic field
The curve synoptic diagram that remanence ratio when along [100] direction changes with magnetic field angle；
In the f state for one kind provided in an embodiment of the present invention, Co free magnetic layer and Ni magnetism fixing layer are in magnetic field by Fig. 7
Normalization hysteresis loop schematic diagram when along [100] direction；
In the f state for one kind provided in an embodiment of the present invention, Co free magnetic layer and Ni magnetism fixing layer are in magnetic field by Fig. 8
The curve synoptic diagram that remanence ratio when along [100] direction changes with magnetic field angle；
Fig. 9 be under a kind of A, B, C, D, E and F state provided in an embodiment of the present invention measured after being cooled to 80K temperature from
Stopcock face outside direction resistance with changes of magnetic field curve synoptic diagram；
Figure 10 is that a kind of electric field provided in an embodiment of the present invention causes spin valve face external resistance variation (ER) to be answered with non-volatile
Become change curve schematic diagram；
Figure 11 is that a kind of magnetic moments rotations provided in an embodiment of the present invention cause magnetic resistance change rate (△ MR) to become with non-volatile strain
Change curve synoptic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of structural schematic diagram of automatically controlled spin valve structure provided in an embodiment of the present invention, the electricity
Controlling spin valve structure includes:
Ferro-electricity single crystal substrate 11；
Magnetic fixing layer 12 on the ferro-electricity single crystal substrate 11 is set, and the magnetism fixing layer 12 includes first part
And second part, the first part are close to ferro-electricity single crystal substrate portions 11, the second part setting is carried on the back in first part
From 11 side of ferro-electricity single crystal substrate, and the area of the first part is greater than the area of the second part；；
The nonmagnetic intermediate layer 13 that the second part deviates from 11 side of ferro-electricity single crystal substrate is set；
The nonmagnetic intermediate layer 13 is set away from the free magnetic layer 14 of 12 side of the magnetic fixing layer；
Cover the side of the side wall of the second part, the side wall of the nonmagnetic intermediate layer 13 and the free magnetic layer 14
The insulating layer 15 of wall；
The metallic top electrode trace layer 16 that the free magnetic layer 14 deviates from 13 side of nonmagnetic intermediate layer is set,
The metallic top electrode trace layer 16 covers the surface of the free magnetic layer 14 and the insulating layer 15；
The first metal electrode 17 and the second metal electrode 18 of 11 two sides of ferro-electricity single crystal substrate are set.
Specifically, magnetic fixing layer 12,14 structure of nonmagnetic intermediate layer 13 and free magnetic layer in the automatically controlled spin valve structure
At spin valve structure outside face, using the inverse piezoelectric effect of ferro-electricity single crystal substrate 11, by the first of ferro-electricity single crystal substrate 11
Apply different size of face internal electric field on metal electrode 17 and the second metal electrode 18, Spin Valve is generated along the non-of direction of an electric field
Volatile strain to regulate and control free magnetic layer magnetic moments rotations, and realizes the regulation of more resistive states.
Optionally, in embodiments of the present invention, length and width are 50nm-20 μm to spin valve structure, including endpoint outside the face
Value, for example, the length and width of spin valve structure are 100nm or 10 μm outside the face.
Optionally, the ferro-electricity single crystal substrate 11 include, but are not limited to magnesium lead niobate-lead titanates (PMN-PT, chemistry at
It is divided into: 0.7Pb (Mg1/3Nb2/3)O3-0.3PbTiO3) ferro-electricity single crystal substrate or zinc niobate lead-lead titanates (and PZN-PT, chemistry at
It is divided into: (1-x) Pb (Zn1/3Nb2/3)O3-xPbTiO3) ferro-electricity single crystal substrate or lead zirconate titanate (PZT, chemical component are as follows: Pb
(Zr1-xTix)O3) ferro-electricity single crystal substrate or lead titanates (PTO, chemical component are as follows: PbTiO3) ferro-electricity single crystal substrate or barium titanate
(BTO, chemical component are as follows: BaTiO3) ferro-electricity single crystal substrate.
In embodiments of the present invention ferro-electricity single crystal substrate 11 with magnesium lead niobate-lead titanates (PMN-PT, chemical component are as follows:
0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3) for ferro-electricity single crystal substrate, it is oriented to (001).
Optionally, the material of the magnetic fixing layer 12 and the material of the free magnetic layer 14 are magnetostriction coefficient symbol
Number opposite magnetic metal material or alloy material.
Specifically, the magnetism fixing layer refers to magnetic moment not with the magnetic material layer for applying electric field and changing, the magnetism is solid
The material of given layer 12 includes, but are not limited to Fe metal material or Co metal material or Ni metal material or comprising these element
Magnetic alloy material.
The free magnetic layer refers to magnetic moment with the magnetic material layer for applying electric field and changing, the material of the free magnetic layer 14
Material includes, but are not limited to Fe metal material or Co metal material or Ni metal material or the magnetic alloy comprising these elements
Material.
In embodiments of the present invention with the material of the magnetic fixing layer 12 for Ni metal material, the free magnetic layer 14
Material be Co metal material for be illustrated.
It should be noted that application is parallel to iron when growing the free magnetic layer 14 and the magnetic fixing layer 12
Electric 11 side surface direction of single crystalline substrate and the magnetic field for being greater than its ferromagnetic saturation field.
Optionally, the magnetic fixing layer 12 with a thickness of 10nm-30nm, including endpoint value, for example, described magnetic fixed
Layer 12 with a thickness of 20nm or 25nm or 30nm.
Optionally, the free magnetic layer 14 with a thickness of 10nm-30nm, including endpoint value, for example, the magnetic free
Layer 14 with a thickness of 15nm or 20nm.
Optionally, the material of the magnetic central layer 13 include, but are not limited to Cu metal material or Al metal material or
Cr metal material or Mg metal material or the non-magnetic alloy material comprising these elements.
It is illustrated so that the material of the magnetic central layer 13 is Cu metal material as an example in embodiments of the present invention.
Optionally, the magnetic central layer 13 with a thickness of 5nm-10nm, including endpoint value, for example, described magnetic intermediate
Layer 13 with a thickness of 6nm or 7nm or 8nm.
Optionally, the metallic top electrode trace layer 16, first metal electrode 17 and second metal electrode 18
Material it is identical.
Specifically, the metallic top electrode trace layer 16, first metal electrode 17 and second metal electrode 18
Material include, but are not limited to Ti metal material or Au metal material or Ag metal material or Cu metal material or contain
The alloy material with good conductivity of these elements.
Optionally, the metallic top electrode trace layer 16, first metal electrode 17 and second metal electrode 18
Thickness >=20um.
Optionally, the material of the insulating layer 15 includes, but are not limited to SiO2Material or MgO material or Al2O3Material,
Or AlN material.
Optionally, the insulating layer 15 with a thickness of 50nm-200nm, including endpoint value, such as the thickness of the insulating layer 15
Degree is 100nm or 150nm.
Based on the automatically controlled spin valve structure that the above embodiment of the present invention provides, simply its manufacturing process is explained below
It states, production method in embodiments of the present invention and is not construed as limiting.
One PMN-PT ferro-electricity single crystal substrate is provided first.
By ion beam sputter depositing or magnetron sputtering deposit in the way of carry out coating growth, for example, by using ion beam sputtering
The mode of deposition carries out.
Ion beam sputtering system cavity is evacuated to < 5 × 10-5Pa, after be filled with Ar gas, air pressure is about 0.03Pa, lead to
Regulation acceleration voltage, heater current and plated film time control thicknesses of layers are crossed, plated film rate is about 3nm per minute, growth course
It is middle to apply the externally-applied magnetic field for being about 200Oe along PMN-PT ferro-electricity single crystal substrate [100] direction size.
Wherein, the plated film time of Ni magnetism of material fixing layer is about 10min, and it is about 30nm that thickness, which is made,.
The plated film time of Cu material nonmagnetic intermediate layer is about 2min, and it is about 7nm that thickness, which is made,.
The plated film time of Co magnetism of material free layer is about 5min, and it is about 15nm that thickness, which is made,.
Later, using technologies such as ultraviolet photolithographic or ion beam etchings by the second part of Ni magnetism of material fixing layer, Cu material
It is spin valve structure outside 10 μm of face that length and width, which are made, in material nonmagnetic intermediate layer and Co magnetism of material free layer.
Secondly, using magnetron sputtering technique growing silicon oxide as insulating layer, then with ion beam sputtering technology growth thickness
The metal Ti/Au film of about 30nm is as metallic top electrode trace layer.
Finally, in the first metal electrode and the second metal electricity of the two sides of PMN-PT ferro-electricity single crystal substrate growth Au material
Pole.
The performance principle of automatically controlled spin valve structure is illustrated below.
With reference to Fig. 2, Fig. 2 is provided in an embodiment of the present invention a kind of at room temperature along PMN-PT ferro-electricity single crystal substrate [010] side
When applying electric field to (being defined as "+" direction), strain in this direction is with electric field change curve synoptic diagram.Wherein, O state is
The unpolarized strain regime of PMN-PT ferro-electricity single crystal substrate, strain size are defined as 0.It can be seen that the electric field of application+4kV/cm is simultaneously
After being decreased to 0, i.e., under F state, non-volatile elongation strain of the PMN-PT ferro-electricity single crystal substrate along [010] direction is larger, then divides
Not application -1.5kV/cm, -1.4kV/cm, -1.3kV/cm, -1.2kV/cm and -1.1kV/cm electric field and after being decreased to 0, it is non-easily
It is smaller to lose elongation strain, and negative sense electric field is bigger, non-volatile elongation strain is smaller.Wherein, -1.5kV/cm, -1.4kV/cm, -
1.3kV/cm, -1.2kV/cm and -1.1kV/cm respectively correspond A, B, C, D and E-state, B, C, D and the E-state not body in Fig. 2
It is existing.
Therefore, it by applying different size of electric field to PMN-PT ferro-electricity single crystal substrate [010] direction, can obtain at least
6 regulatable non-volatile strain regimes, i.e. A, B, C, D, E and F state.
For direct magnetostriction Co free magnetic layer and negative magnetostriction Ni magnetism fixing layer, when by PMN-PT iron
When electric single crystalline substrate is along the elongation strain in [010] direction, heat treatment such as Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7 and Fig. 8 at room temperature
It is shown.
Fig. 3 is one kind provided in an embodiment of the present invention under unpolarized O state, Co free magnetic layer and Ni magnetism fixing layer
Normalization hysteresis loop schematic diagram when magnetic field is along [100] direction, Fig. 4 are one kind provided in an embodiment of the present invention unpolarized
Under O state, what the remanence ratio of Co free magnetic layer and Ni magnetism fixing layer when magnetic field is along [100] direction changed with magnetic field angle
Curve synoptic diagram.
For remanence ratio with magnetic field angle change curve, the direction of remanence ratio big (being close to 1) represent free magnetic layer and
Magnetic fixing layer easy axis, that is, magnetic field be 0 when magnetic moment direction, it can be seen that Co free magnetic layer and Ni
Magnetic moment and easy magnetizing axis of the magnetic fixing layer under unpolarized O state are along [100] direction, as shown in Figure 3 and Figure 4, this is because
Apply along PMN-PT ferro-electricity single crystal substrate [100] direction, caused by size is about the externally-applied magnetic field of 200Oe during the growth process.
Fig. 5 is one kind provided in an embodiment of the present invention under A condition, and Co free magnetic layer and Ni magnetism fixing layer are in magnetic field
Normalization hysteresis loop schematic diagram when along [100] direction, Fig. 6 are one kind provided in an embodiment of the present invention under A condition, Co magnetic
The curve synoptic diagram that the remanence ratio of free love layer and Ni magnetism fixing layer when magnetic field is along [100] direction changes with magnetic field angle.
Under A condition, as shown in Fig. 2, Ni magnetism fixing layer, Cu nonmagnetic intermediate layer and Co free magnetic layer constitute from
Stopcock is smaller by the non-volatile elongation strain along [010] direction, as shown in Figure 5 and Figure 6, Ni magnetism fixing layer and Co magnetic at this time
The easy magnetizing axis and magnetic moment direction of free love layer are still along [100] direction.
In the f state for one kind provided in an embodiment of the present invention, Co free magnetic layer and Ni magnetism fixing layer are in magnetic field by Fig. 7
Normalization hysteresis loop schematic diagram when along [100] direction, Fig. 8 be it is provided in an embodiment of the present invention it is a kind of in the f state, Co magnetic
The curve synoptic diagram that the remanence ratio of free love layer and Ni magnetism fixing layer when magnetic field is along [100] direction changes with magnetic field angle.
In the f state, as shown in Fig. 2, Ni magnetism fixing layer, Cu nonmagnetic intermediate layer and Co free magnetic layer constitute from
Stopcock is larger by the non-volatile elongation strain along [010] direction, as shown in Figure 7 and Figure 8, direct magnetostriction Co free magnetic layer
Easy magnetizing axis and non-volatile 90 ° of the rotation of magnetic moment direction to [010] direction, in contrast, negative magnetostriction Ni magnetism fixing layer
Easy magnetizing axis and magnetic moment direction remain motionless.
That is, the automatically controlled spin valve structure realizes the magnetic moment direction of Co free magnetic layer in Spin Valve by electric field
Non-volatile 90 ° of rotation.
At the same time, the variation of strain and the rotation of Co free magnetic layer magnetic moment can all cause Ni magnetism fixing layer, Cu non-
The magnetic resistance of the face outside direction for the Spin Valve that magnetic central layer and Co free magnetic layer are constituted changes.It is this with reference to Fig. 9, Fig. 9
Under a kind of A, B, C, D, E and F state that inventive embodiments provide, it is cooled to the spin valve face outside direction electricity measured after 80K temperature
Resistance with changes of magnetic field curve synoptic diagram, it can be seen that under A condition, spin valve face external resistance be worth larger, about 260 Ω, resistance with
Changes of magnetic field curve has change dramatically at 4, and magnetic field respectively corresponds Ni magnetism fixing layer (about ± 520Oe) and Co magnetism certainly at variation
By the positive and negative coercive field of layer (about ± 300Oe).
When being gradually increased with non-volatile strain to F state, non-volatile 90 ° of the rotation of the magnetic moment direction of Co free magnetic layer,
The outer resistive state of spin valve face is caused to change.Under F state, spin valve face external resistance value reduce, about 229 Ω, resistance with
Changes of magnetic field curve only has change dramatically at 2, and magnetic field (about ± 350Oe) respectively corresponds the positive and negative of Ni magnetism fixing layer and rectify at variation
Stupid field.
It follows that by applying different electric fields, in Ni magnetism fixing layer, Cu nonmagnetic intermediate layer and Co magnetic free
The non-volatile resistive state of at least six, i.e. magnetic resistance under A, B, C, D, E and F state may be implemented in the Spin Valve that layer is constituted.
With reference to Figure 10, Figure 10 be a kind of electric field provided in an embodiment of the present invention cause to spin valve face external resistance change (ER) with
Non-volatile strain variation curve synoptic diagram, as shown in Figure 10, in monotone variation, maximum caused by the non-volatile strain of electric field regulation
Resistance variations are about 12%, and resistance variations are about 2% to 3% between different non-volatile strain regime.
With reference to Figure 11, Figure 11 is that a kind of magnetic moments rotations provided in an embodiment of the present invention cause magnetic resistance change rate (△ MR) with non-easy
Strain variation curve synoptic diagram is lost, as shown in figure 11, the magnetic moments rotations of electric field regulation cause magnetic resistance change rate with non-volatile strain
Increase and increases, up to about 0.015%.
In summary, a kind of automatically controlled spin valve structure provided in an embodiment of the present invention, passes through side first electrode and second
Electrode applies not same electric field to ferro-electricity single crystal substrate, realizes magnetic fixing layer, nonmagnetic intermediate layer and free magnetic layer and constitutes
Spin Valve in free magnetic layer magnetic moment it is non-volatile rotation 90 °, can also continuously regulate and control non-volatile strain regime, to obtain
The outer resistive state of the non-volatile spin valve face of at least six.
Based on a kind of automatically controlled spin valve structure that the above embodiment of the present invention provides, also mention in an alternative embodiment of the invention
A kind of non-volatile memory device is supplied, the non-volatile memory device includes automatically controlled spin valve structure described above.
The non-volatile memory device has the characteristic of the automatically controlled spin valve structure.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that article or equipment including a series of elements not only include those elements, but also
It including other elements that are not explicitly listed, or further include for this article or the intrinsic element of equipment.Do not having
In the case where more limitations, the element that is limited by sentence "including a ...", it is not excluded that in the article including above-mentioned element
Or there is also other identical elements in equipment.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of automatically controlled spin valve structure is based on Spin Valve and ferroelectric heterostructures, which is characterized in that the automatically controlled Spin Valve knot
Structure includes:
Ferro-electricity single crystal substrate；
Magnetic fixing layer on the ferro-electricity single crystal substrate is set, and the magnetism fixing layer includes first part and second
Point, the first part is close to ferro-electricity single crystal substrate portions, and the second part setting deviates from ferro-electricity single crystal in first part
One side of substrate, and the area of the first part is greater than the area of the second part；
The nonmagnetic intermediate layer that the second part deviates from the ferro-electricity single crystal one side of substrate is set；
The nonmagnetic intermediate layer is set away from the free magnetic layer of the magnetic fixing layer side；
Cover the insulation of the side wall of the side wall of the second part, the side wall of the nonmagnetic intermediate layer and the free magnetic layer
Layer；
The metallic top electrode trace layer that the free magnetic layer deviates from the nonmagnetic intermediate layer side, the metal roof are set
Contact conductor layer covers the surface of the free magnetic layer and the insulating layer；
The first metal electrode and the second metal electrode of ferro-electricity single crystal substrate two sides are set；
Wherein, the magnetic fixing layer, the nonmagnetic intermediate layer and the free magnetic layer constitute spin valve structure outside face.
2. automatically controlled spin valve structure according to claim 1, which is characterized in that the ferro-electricity single crystal substrate is magnesium niobic acid
Lead-lead titanates ferro-electricity single crystal substrate or zinc niobate lead-lead titanates ferro-electricity single crystal substrate or lead zirconate-titanate ferroelectric single crystalline substrate or
Lead titanates ferro-electricity single crystal substrate or barium titanate ferro-electricity single crystal substrate.
3. automatically controlled spin valve structure according to claim 1, which is characterized in that the magnetism material of fixing layer and described
The material of free magnetic layer is the opposite magnetic metal material or alloy material of magnetostriction coefficient symbol.
4. automatically controlled spin valve structure according to claim 1, which is characterized in that the free magnetic layer with a thickness of
10nm-30nm, including endpoint value.
5. automatically controlled spin valve structure according to claim 1, which is characterized in that the material of the magnetic central layer is Cu gold
Belong to material or Al metal material or Cr metal material or Mg metal material or non-magnetic alloy material.
6. automatically controlled spin valve structure according to claim 1, which is characterized in that the magnetic central layer with a thickness of 5nm-
10nm, including endpoint value.
7. automatically controlled spin valve structure according to claim 1, which is characterized in that spin valve structure length and width are outside the face
50nm-20 μm, including endpoint value.
8. automatically controlled spin valve structure according to claim 1, which is characterized in that the material of the insulating layer is SiO2Material,
Or MgO material or Al2O3Material or AlN material.
9. automatically controlled spin valve structure according to claim 1, which is characterized in that the insulating layer with a thickness of 50nm-
200nm, including endpoint value.
10. a kind of non-volatile memory device, which is characterized in that the non-volatile memory device includes above-mentioned such as claim 1-9
Described in any item automatically controlled spin valve structures.
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| CN112349828A (en) * | 2020-10-22 | 2021-02-09 | 华东师范大学 | Single crystal magnetic/ferroelectric multilayer film heterojunction and preparation method and application thereof |
| CN112701215A (en) * | 2020-12-28 | 2021-04-23 | 西安交通大学 | SOT-MRAM of artificial antiferromagnetic fixed layer with ferroelectric auxiliary regulation |
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