CN107910270B - Power semiconductor device and method of manufacturing the same - Google Patents
Power semiconductor device and method of manufacturing the same Download PDFInfo
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- CN107910270B CN107910270B CN201711148753.7A CN201711148753A CN107910270B CN 107910270 B CN107910270 B CN 107910270B CN 201711148753 A CN201711148753 A CN 201711148753A CN 107910270 B CN107910270 B CN 107910270B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 210000000746 body region Anatomy 0.000 claims abstract description 23
- 238000011049 filling Methods 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- -1 oxynitride Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 37
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000605 extraction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 118
- 238000000151 deposition Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 21
- 238000005530 etching Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- 230000005669 field effect Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The application discloses a power semiconductor device and a method of manufacturing the same. The method comprises the following steps: forming a plurality of trenches in a semiconductor substrate; forming split gate structures in the first trench and the second trench; forming a shield wiring in the third trench; a body region in the semiconductor substrate; forming a source region in the body region; and forming a source electrode, a gate electrode, and a shield electrode electrically connected to the source region, the gate conductor, and the shield wiring, respectively, wherein the shield wiring is electrically connected to the shield conductor, and the shield wiring includes a first portion filling the third trench and a second portion extending laterally at the surface of the semiconductor substrate, the second portion being for rewiring. The method improves charge balance effect by using shielding wiring of independent extraction electrodes, and uses shielding wiring for rewiring to improve device yield and reliability.
Description
Technical Field
The present invention relates to the technical field of electronic devices, and more particularly, to a power semiconductor device and a method of manufacturing the same.
Background
Power semiconductor devices, also known as power electronics devices, include power diodes, thyristors, VDMOS (vertical double diffused metal oxide semiconductor) field effect transistors, LDMOS (lateral diffused metal oxide semiconductor) field effect transistors, IGBTs (insulated gate bipolar transistors), and the like. The VDMOS field effect transistor includes a source region and a drain region formed on opposite surfaces of a semiconductor substrate, and in an on state, a current flows mainly along a longitudinal direction of the semiconductor substrate.
In high frequency operation of a power semiconductor device, lower on-loss and switching loss are important indicators for evaluating device performance. On the basis of the VDMOS field effect transistor, a trench type MOS field effect transistor has been further developed, in which a gate conductor is formed in the trench, and a gate dielectric is formed on the trench sidewall to separate the gate conductor and the semiconductor layer, thereby forming a channel in the semiconductor layer in the direction of the trench sidewall. The Trench (Trench) process eliminates the effect of the parasitic JFET resistance of the planar structure by changing the channel from horizontal to vertical, thereby greatly reducing the cell size. On the basis of increasing the cell density and the total width of the channel in the chip in unit area, the channel width-to-length ratio of the device on the unit silicon chip can be increased, so that the current is increased, the on-resistance is reduced and related parameters are optimized, and the aim that the die with smaller size has higher power and high performance is fulfilled, so that the trench technology is increasingly applied to novel power semiconductor devices.
However, as the cell density increases, the inter-electrode resistance increases, and the switching loss increases accordingly, and the gate-drain capacitance Cgd directly relates to the switching characteristics of the device. In order to reduce the gate-drain capacitance Cgd, a split gate trench (SPLIT GATE TRENCH, abbreviated as SGT) power semiconductor device has been further developed in which the gate conductor extends to the drift region while the gate conductor is separated from the drain by a thick oxide, thereby reducing the gate-drain capacitance Cgd, improving the switching speed, and reducing the switching loss. Meanwhile, the shielding conductor below the gate conductor and the shielding conductor connected with the source electrode are grounded together, so that a charge balance effect is introduced, a surface electric field (Reduced Surface Field, abbreviated as RESURF) effect is reduced in the vertical direction of the power semiconductor device, on-resistance Rdson is further reduced, and on-loss is reduced.
FIGS. 1a and 1b are cross-sectional views showing main steps of a method of manufacturing an SGT power semiconductor device according to the prior art, respectively. As shown in fig. 1a, a trench 102 is formed in a semiconductor substrate 101. A first insulating layer 103 is formed in a lower portion of the trench 102, and a shield conductor 104 fills the trench 102. At the upper portion of the trench 102, two openings separated by a shield conductor 104 are formed. Further, as shown in fig. 1b, a gate dielectric 105 is formed on the upper sidewalls of the trench 102 and the exposed portions of the shield conductor 104, and then a conductive material is filled in the two openings separated by the shield conductor 104 to form two gate conductors 106.
In the SGT power semiconductor device, shield conductor 104 is connected to the source electrode of the power semiconductor device for generating RESURF effects. Two gate conductors 106 are located on either side of the shield conductor 104. The shield conductor 104 is separated from the drain region of the power semiconductor device by a first insulating layer 103 and from the gate electrode 106 by a gate dielectric 105. The gate conductor 106 is separated from the well region in the semiconductor substrate 101 by the gate dielectric 105, thereby forming a channel in the well region. As shown, the thickness of the first insulating layer 103 is less than the thickness of the gate dielectric 105.
According to the SGT theory, whatever SGT structure, the material of the shielding conductor 104 needs to be isolated from the second conductive material and the material used for isolation needs to meet certain capacitance parameters, otherwise, failures such as gate-source short circuit, abnormal gate-drain capacitance Cgd, etc. are prone to occur. How to optimize the device structure and meet the parameter and reliability requirements of the product, and at the same time, the most efficient and low cost wiring method is what is needed to be researched by the person skilled in the art.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a power semiconductor device and a method of manufacturing the same, in which a shielded wiring employing an independent extraction electrode improves a charge balance effect, and a wiring region of a shielded conductor uses an isolation layer to reduce process steps.
According to a first aspect of the present invention, there is provided a method of manufacturing a power semiconductor device, comprising: forming a plurality of trenches in a semiconductor substrate of a first doping type, the plurality of trenches including first to third trenches located in first to third regions of the semiconductor substrate, respectively; forming a split gate structure in the first trench and the second trench, the split gate structure including a shield conductor, a gate conductor, and a second insulating layer sandwiched therebetween; forming at least a portion of a shield wiring in the third trench; forming a body region of a second doping type in a region of the semiconductor substrate adjacent to the trench, the second doping type being opposite to the first doping type; forming a source region of the first doping type in the body region; and forming a source electrode, a gate electrode, and a shield electrode electrically connected to the source region, the gate conductor, and the shield wiring, respectively, wherein the shield wiring is electrically connected to the shield conductor, and the shield wiring includes a first portion filling the third trench and a second portion extending laterally at the surface of the semiconductor substrate, the second portion being for rewiring.
Preferably, the step of forming split gate structures in the first trench and the second trench includes: forming an insulating stack on sidewalls and bottoms of the first trench and the second trench, the insulating stack including a first insulating layer and a second insulating layer, the first insulating layer surrounding the second insulating layer; forming openings and the shielding conductors at upper and lower portions of the first trench and the second trench, respectively; removing a portion of the first insulating layer at upper portions of the first trench and the second trench; forming a gate dielectric on sidewalls of the first trench upper portion; and forming the gate conductor to fill the opening, wherein the gate conductor and the shield conductor are isolated from each other by the gate dielectric, the gate conductor and the body are isolated from each other by the gate dielectric, and the shield conductor and the semiconductor substrate are isolated from each other by the insulating stack.
Preferably, the step of forming a shield wiring in the third trench includes: forming an insulating stack on sidewalls and a bottom of the third trench, the insulating stack including a first insulating layer and a second insulating layer, the first insulating layer surrounding the second insulating layer; the shield wiring is formed to fill the third trench, wherein the shield wiring and the semiconductor substrate are isolated from each other by the insulating stack.
Preferably, the shield conductor and the shield wiring are formed from the same conductor layer in the first trench, the second trench, and the third trench.
Preferably, the step of forming the gate conductor includes: forming a conductor layer, wherein a first part of the conductor layer fills the opening, and a second part of the conductor layer transversely extends above the surface of the semiconductor substrate; and etching the conductor layer to remove a second portion of the conductor layer, the first portion of the conductor layer remaining in the first trench and the second trench forming the gate conductor.
Preferably, the source electrode is located in the first region, the gate electrode is located in the second region, the shield electrode is located in the third region, and the first region, the second region, and the third region are spaced apart from each other.
Preferably, the first insulating layer is composed of silicon oxide, and the second insulating layer is composed of at least one selected from silicon nitride, oxynitride, or polysilicon.
Preferably, the thickness of the first insulating layer is in the range of 500 to 50000 angstroms and the thickness of the second insulating layer is in the range of 50 to 5000 angstroms.
Preferably, the first doping type is one of N-type and P-type, and the second doping type is the other of N-type and P-type.
Preferably, the sidewalls of the plurality of trenches are sloped such that a top width of the plurality of trenches is greater than a bottom width of the plurality of trenches.
Preferably, the step of forming the shield conductor, the step of forming the shield wiring, and the step of forming the gate conductor each include at least one deposition.
According to a second aspect of the present invention, there is provided a power semiconductor device comprising: a plurality of trenches in a semiconductor substrate, the semiconductor substrate being of a first doping type, the plurality of trenches comprising first to third trenches in first to third regions of the semiconductor substrate, respectively; a split gate structure located in the first trench and the second trench, the split gate structure comprising a shield conductor, a gate conductor, and a second insulating layer sandwiched therebetween; a shield wiring at least a portion of which is located in the third trench; a body region in the semiconductor substrate, the body region being adjacent to an upper portion of the first trench and being of a second doping type, the second doping type being opposite to the first doping type; the source region is positioned in the body region and is of the first doping type; and a source electrode, a gate electrode, and a shield electrode electrically connected to the source region, the gate conductor, and the shield wiring, respectively, wherein the shield wiring is electrically connected to the shield conductor, and the shield wiring includes a first portion filling the third trench and a second portion extending laterally on the surface of the semiconductor substrate, the second portion being for rewiring.
Preferably, the split gate structure in the first trench and the second trench includes: an insulating stack located on the lower sidewalls and bottom of the first trench and the second trench, the insulating stack comprising a first insulating layer and a second insulating layer, the first insulating layer surrounding the second insulating layer; a shield conductor located at a lower portion of the first trench and the second trench; and a gate conductor located in the first trench and above the first trench, wherein the gate conductor and the shield conductor are isolated from each other by the gate dielectric, the gate conductor and the body are isolated from each other by the gate dielectric, and the shield conductor and the semiconductor substrate are isolated from each other by the insulating stack.
Preferably, the source electrode is located in the first region, the gate electrode is located in the second region, the shield electrode is located in the third region, and the first region, the second region, and the third region are spaced apart from each other.
Preferably, the first insulating layer is composed of silicon oxide, and the second insulating layer is composed of at least one selected from silicon nitride, oxynitride, or polysilicon.
Preferably, the thickness of the first insulating layer is in the range of 500 to 50000 angstroms and the thickness of the second insulating layer is in the range of 50 to 5000 angstroms.
Preferably, the first doping type is one of N-type and P-type, and the second doping type is the other of N-type and P-type.
Preferably, the sidewalls of the plurality of trenches are sloped such that a top width of the plurality of trenches is greater than a bottom width of the plurality of trenches.
Preferably, the power semiconductor device is one selected from the group consisting of a CMOS device, a BCD device, a MOSFET transistor, an IGBT, and a schottky diode.
In a method according to an embodiment of the present invention, an SGT structure is formed in a power semiconductor device, wherein an insulating stack is formed between a shield conductor and a semiconductor substrate, thereby reducing a gate-drain capacitance Cgd. The SGT structure includes a source electrode, a gate electrode, and a shield electrode electrically connected to the source region, the gate conductor, and the shield wiring, respectively, the shield wiring being electrically connected to the shield conductor. The shield wiring of the individual extraction electrodes is used, for example, to apply a bias voltage alone on the shield conductor, thereby improving the charge balance effect. The adoption of the isolation layer enables the split gate structures and the shielding conductors in different areas to be formed in a common step, so that the manufacturing cost is reduced. The SGT structure is realized through simpler process steps, the problems of complex process, easy occurrence of gate-source short circuit, abnormal gate-drain capacitance Cgd and the like in the conventional process are solved, the parameter and reliability requirements of products are met, and meanwhile, the wiring method is combined with specific process steps to achieve the highest efficiency and low cost. Compared with the prior art, the method can reduce the photoresist mask adopted in the current manufacturing process by 3 to 4 photoresist masks based on the 0.25 to 0.35um process.
The split gate power semiconductor device structure for reducing the source-drain capacitance and the forming method thereof can be applied to products such as CMOS, BCD, power MOSFET, high-power transistor, IGBT, schottky and the like.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings, in which:
Fig. 1a and 1b show a cross-sectional view of the main steps of a method for manufacturing a power semiconductor device according to the prior art, respectively.
Fig. 2 shows a flowchart of a method of manufacturing a power semiconductor device according to an embodiment of the present invention.
Fig. 3a to 3i show different stages of a method of manufacturing a semiconductor device according to an embodiment of the invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements are denoted by like reference numerals throughout the various figures. For clarity, the various features of the drawings are not drawn to scale. Furthermore, some well-known portions may not be shown. The semiconductor structure obtained after several steps may be depicted in one figure for simplicity.
It will be understood that when a layer, an area, or a structure of a device is described as being "on" or "over" another layer, another area, it can be referred to as being directly on the other layer, another area, or further layers or areas can be included between the other layer, another area, etc. And if the device is flipped, the one layer, one region, will be "under" or "beneath" the other layer, another region.
If, for the purposes of describing a situation directly on top of another layer, another region, the expression "a directly on top of B" or "a directly on top of B and adjoining it" will be used herein. In the present application, "a is directly in B" means that a is in B and a is adjacent to B, instead of a being in the doped region formed in B.
In the present application, the term "semiconductor structure" refers to a generic term for the entire semiconductor structure formed in the various steps of fabricating a semiconductor device, including all layers or regions that have been formed.
Numerous specific details of the invention, such as device structures, materials, dimensions, processing techniques and technologies, are set forth in the following description in order to provide a thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
Unless specifically indicated below, the various portions of the semiconductor device may be composed of materials known to those skilled in the art. Semiconductor materials include, for example, group III-V semiconductors, such as GaAs, inP, gaN, siC, and group IV semiconductors, such as Si, ge.
Fig. 2 illustrates a flow chart of a method of fabricating an SGT power semiconductor device according to an embodiment of the present invention, and fig. 3a to 3i illustrate cross-sectional views in different steps, respectively. The steps of the manufacturing method according to the embodiment of the present invention are described below with reference to fig. 2 and 3a to 3 i.
The method starts with a semiconductor substrate 101. The semiconductor substrate is, for example, a silicon substrate doped to an N-type, and the silicon substrate is uniformly doped in a longitudinal direction and has a resistivity in a range of, for example, 1 to 15 Ω·cm. The semiconductor substrate has opposite first and second surfaces. Preferably, the voltage dividing ring structure of the power semiconductor is formed on the first surface of the semiconductor substrate through photolithography, etching, ion implantation, impurity activation and other processes, and the voltage dividing ring structure is a well-known structural part of the device structure in the art, and will not be described in detail herein. Preferably, the semiconductor substrate 101 employed in the present embodiment may be formed with a semiconductor device such as a MOS field effect transistor, an IGBT insulated gate field effect transistor, a schottky diode, or the like.
In step S101, trenches 102 are formed in the first region 201, the second region 202, and the third region 203 of the semiconductor substrate 101, respectively, as shown in fig. 3 a.
The process for forming the trench 102 includes forming a resist mask by photolithography and etching, and etching the exposed portion of the semiconductor substrate 101 through an opening of the resist mask.
In this embodiment, the first region 201 refers to the wiring region of the source region in the SGT structure, the second region 202 refers to the wiring region of the gate conductor in the SGT structure, and the second region 203 refers to the wiring region of the shield conductor in the SGT structure.
The trench 102 extends downward from the surface of the semiconductor substrate 101 and reaches a predetermined depth in the semiconductor substrate 101. In this embodiment, the width of the trench 102 is, for example, 0.2 to 10 microns and the depth is, for example, 0.1 to 50 microns. The width of the trench of the SGT structure is much wider than the trench of a conventional trench power semiconductor device of the same conduction efficiency level, and the depth of the trench is also much deeper than the trench of the conventional trench power semiconductor device.
Preferably, the sidewalls of the trench 102 are sloped, for example, at an angle of 85 to 89 degrees relative to the top of the vertical trench 102, such that the bottom width of the trench 102 is less than the top width. The angle of the groove is inclined, so that the filling of each subsequent dielectric layer and conductive material is facilitated, and the defects caused by filling gaps are reduced.
In step S102, an insulating stack comprising a conformal first insulating layer 122 and a second insulating layer 123 is sequentially formed on the surface of the semiconductor substrate 101, as shown in fig. 3 b.
In the trench 102, the first insulating layer 122 surrounds the second insulating layer 123. The first insulating layer 122 and the second insulating layer 123 are composed of different insulating materials. In this embodiment, the first insulating layer 122 is composed of, for example, silicon oxide. The second insulating layer 123 is composed of, for example, at least one selected from silicon nitride, oxynitride, or polysilicon. Preferably, the second insulating layer 123 is composed of silicon nitride. The thickness of the first insulating layer 122 is, for example, 500 to 50000 angstroms, and the thickness of the second insulating layer 123 is, for example, 50 to 5000 angstroms. The larger the thickness of the first insulating layer 122 is, the smaller the gate-drain capacitance Cgd is.
The process for forming the first insulating layer 122 includes forming an oxide layer on the inner walls of the trench 102 by thermal oxidation, chemical Vapor Deposition (CVD) or high-density plasma chemical vapor deposition. The oxide layer conformally covers the sidewalls and bottom of trench 102, thereby still preserving a portion of the interior space of trench 102.
The process for forming the second insulating layer 123 includes forming a nitride layer on the surface of the first insulating layer 122 by Chemical Vapor Deposition (CVD) or high-density plasma chemical vapor deposition. The nitride layer conformally covers the surface of the first insulating layer 122, thereby still preserving a portion of the interior space of the trench 102.
In step S103, the opening 124 and the shield conductor 104 are formed in the upper and lower portions of the trench 102 of the first region 201 and the second region 202, respectively, and the shield wiring 131 is formed in the trench 102 of the third region 203, as shown in fig. 3 c.
In this embodiment, the shield conductor 104 and the shield wiring 131 are formed using the same conductor layer, for example, composed of doped amorphous silicon or polysilicon, respectively. The process for forming the conductor layer includes, for example, depositing polysilicon using a sputtering or the like process such that the polysilicon fills the remainder of the trench 102. Then, in the first region 201 and the second region 202, the conductor layer and the second insulating layer 123 are etched to remove portions located outside and above the trench 102, thereby forming an opening in the upper portion of the trench 102.
Preferably, the conductor layer for forming the shield conductor 104 and the shield wiring 131 is composed of polysilicon. The polysilicon is deposited at a deposition rate of, for example, 1 to 100 angstroms per minute, at a deposition temperature of, for example, 510 to 650 degrees celsius, and at a thickness of, for example, 1000 to 100000 angstroms. By controlling the doping concentration of the conductor layer, the resistance thereof can be adjusted. In this embodiment, the sheet resistance Rs of the conductor layer is, for example, less than 20 ohms. Further, the smaller the sheet resistance Rs of the conductor layer, the greater the oxide layer thickness formed during the subsequent oxide layer compared to silicon. Furthermore, the material of the conductor layer is amorphous, so that the lower sheet resistance Rs is easier to form.
In the above-described deposition step, the conductor layer material may be formed by one or more depositions. In a plurality of depositions, the rate of the subsequent deposition step is smaller than that of the previous deposition step, so that the deposition rate is gradually reduced. The slower the deposition rate, the better the filling effect during trench filling, the more difficult the trench bottom filling than the trench top, so the rate of front deposition needs to be less than the rate of any one deposition later when filling multiple times.
In this etching step, a resist mask is formed by photolithography and etching to expose the first region 201 and the second region 202 of the semiconductor substrate 101 and to block the third region 203 of the semiconductor substrate 101. In the etching step described above, wet etching may be employed. Due to the selectivity of the etchant, the exposed portions of the conductor layer and the second insulating layer 123 are removed with respect to the first insulating layer 122. This etching not only removes the portions of the conductor layer and the second insulating layer 123 that are outside the trench 102, but also etches back the portions of the conductor layer and the second insulating layer 123 that are inside the trench 102. After etching, the portion of the conductor layer remaining in the trenches 102 of the first region 201 and the second region 202 forms the shield conductor 104. In the third region 203, the shield wiring 131 includes a first portion in the trench 102 of the third region 203 and a second portion extending laterally on the surface of the semiconductor substrate 101. Preferably, the etching step includes two etches, with different etchants, in a first etch the exposed portion of the conductor layer is removed relative to the second insulating layer 123, and in a second etch the exposed portion of the second insulating layer 123 is removed relative to the first insulating layer 122. After the etch back, an opening 124 is formed in the trench 102 to a predetermined depth, for example, 0.2 to 4 micrometers extending downward from the surface of the semiconductor substrate 101. The opening 124 re-exposes the upper sidewalls of the trench 102.
In step S104, a portion of the first insulating layer 122 is etched away in the trenches of the first region 201 and the second region 202, as shown in fig. 3 d.
In this etching step, a resist mask is formed by photolithography and etching to expose the first region 201 and the second region 202 of the semiconductor substrate 101 and to block the third region 203 of the semiconductor substrate 101. The etching process is, for example, wet etching. The exposed portion of the first insulating layer 122 is removed with respect to the semiconductor substrate 101 due to the selectivity of the etchant. The opening 124 extends downward from the surface of the semiconductor substrate 101 to a depth of, for example, 0.5 to 5 micrometers. The etching removes the portion of the first insulating layer 122 located at the upper portion of the trench 102. After etching, a portion of the first insulating layer 122 located at the lower side wall and bottom of the trench 102 remains so that the shield conductor 104 and the lower portion of the shield wiring 131 and the semiconductor substrate 101 are still isolated from each other by the insulating stack.
In step S105, a gate dielectric 105 is formed on the upper sidewalls of the trench 102 and on top of the shield conductor 104, as shown in fig. 3 e.
The process for forming gate dielectric 105 may employ thermal oxidation. The temperature of the thermal oxidation is, for example, 950 to 1200 degrees celsius. The exposed silicon material of the semiconductor substrate 101 and the shield conductor 104 forms silicon oxide during thermal oxidation. In the thermal oxidation step, the surface of the semiconductor substrate 101 is also exposed to the atmosphere. The gate dielectric 105 covers not only the upper sidewalls of the trench 102 but also the surface of the semiconductor substrate 101.
Compared to the dense semiconductor substrate 101, the shielding conductor 104 is a heavily doped amorphous or polycrystalline material, which has a relatively loose structure and a relatively high doping concentration. As a result, the thickness of the second portion of the gate dielectric 105 on the surface of the shield conductor 104 is greater than the thickness of the first portion on the surface of the semiconductor substrate 101 and in the trench 102. The first portion of gate dielectric 105 is, for example, 50 to 5000 angstroms thick and the second portion is, for example, 60 to 10000 angstroms thick.
In step S106, the gate conductor 106 is formed in the trenches of the first region 201 and the second region 202, and the body region 107 and the source region 108 are formed in the region of the semiconductor substrate 101 adjacent to the trench 102, as shown in fig. 3 f.
The gate conductor 106 is composed of, for example, doped amorphous silicon or polysilicon. The process for forming the gate conductor 106 includes, for example, depositing polysilicon using a sputtering or the like process such that the polysilicon fills the openings at the top of the shield conductor 104.
The polysilicon is deposited at a deposition rate of, for example, 1 to 100 angstroms per minute, at a deposition temperature of, for example, 510 to 650 degrees celsius, and at a thickness of, for example, 1000 to 100000 angstroms. By controlling the doping concentration of the gate conductor 106, its resistance can be adjusted. In this embodiment, the sheet resistance Rs of the gate conductor 106 is, for example, less than 20 ohms. Further, the smaller the sheet resistance Rs of the gate conductor 106, the greater the oxide thickness formed during subsequent oxide layers compared to silicon. Further, the material of the gate conductor 106 is amorphous, which is easier to form into a lower sheet resistance Rs.
In the deposition step described above, one or more depositions of material forming the gate conductor 106 may be employed. In a plurality of depositions, the rate of the subsequent deposition step is smaller than that of the previous deposition step, so that the deposition rate is gradually reduced. The slower the deposition rate, the better the filling effect during trench filling, the more difficult the trench bottom filling than the trench top, so the rate of front deposition needs to be less than the rate of any one deposition later when filling multiple times.
The polysilicon includes a first portion located in the trenches of the first region 201 and the second region 202, and a second portion extending laterally over the surface of the semiconductor substrate 101.
Next, in the first region 201 and the second region 202, a second portion of the polysilicon laterally extending over the surface of the semiconductor substrate 101 is etched away, such that the polysilicon fills the opening 124 in the upper portion of the trench 102 only in the first region and the second region of the semiconductor substrate 101, thereby forming the gate conductor 106. In the third region 203, polysilicon on the surface of the shield wiring 131 may be completely removed. Further, the second portion of the shield wiring 131 may also be partially etched to be reduced in thickness. However, the second portion of the shield wiring 131 will be used for rewiring, and therefore, the second portion of the shield wiring 131 can be left by controlling the etching time.
Next, a P-type body region 107 is formed in the semiconductor substrate 101, and an N-type source region is formed in the body region 107. The process for forming the body region 107 and the source region 108 is, for example, a plurality of ion implantations. Different types of doped regions are formed by selecting appropriate dopants and then thermally annealing to activate the impurities. In the ion implantation, using the gate conductor 106 and the shielding wiring 131 as hard masks, lateral positions of the body region 107 and the source region 108 can be defined, so that a photoresist mask can be omitted. The angle of the ion implantation is, for example, zero angle, i.e., vertical implantation with respect to the surface of the semiconductor substrate 101. By controlling the energy of the ion implantation, the implantation depth of the body region 107 and the source region 108 can be defined, thereby defining the vertical position.
The dopant used in forming body region 107 may be B11 or BF2, or may be B11 followed by BF2, with an implant energy of 20-100 Kev, an implant dose of 1E 14-1E 16, and a thermal anneal temperature of 500-1000 degrees celsius. In forming the source region 108, the dopant used is p+ or as+, the implant energy is 60-150 Kev, the implant dose is 1E 14-1E 16, and the thermal annealing temperature is 800-1100 degrees celsius.
In this step, an SGT structure is formed in trench 102 of first region 201 and second region 202, including shield conductor 104 and gate conductor 106 located in the trench. The gate conductor 106 includes a first portion located in the trench 102 and a second portion extending over the semiconductor substrate 101. A first portion of the gate conductor 106 is formed in openings 124 on both sides of the shield conductor 104 such that the shield conductor 104 is sandwiched therebetween. The shield conductor 104 and the gate conductor 106 are isolated from each other by a second insulating layer 123. The lower portion of the shield conductor 104 extends to the lower portion of the trench 102 and is isolated from the semiconductor substrate 101 by an insulating stack comprising a first insulating layer 122 and a second insulating layer 123. The gate conductor 106 is adjacent to the body region 107 and the source region 108 and is isolated from each other by the gate dielectric 105.
In step S107, an interlayer dielectric layer 109 is deposited on the surface of the semiconductor structure, as shown in fig. 3 g.
The interlayer dielectric layer 109 covers the first region and the second region of the semiconductor substrate 101. The interlayer dielectric layer 109 may be composed of at least one selected from silicon oxide, silicon nitride, silicon oxynitride, and may have a single-layer or stacked-layer structure. In this embodiment, interlayer dielectric layer 109 may be, for example, borophosphosilicate glass (BPSG) having a thickness of 2000 to 15000 angstroms.
In step S108, a plurality of contact holes 125 reaching the source region 108, the gate conductor 106, and the shield wiring 131 are formed in the interlayer dielectric layer 109, and contact regions 110 are formed at bottoms of the plurality of contact holes 125, respectively, by ion implantation, as shown in fig. 3 h.
The process for forming the contact hole 125 is, for example, dry etching. The sidewalls of the contact holes 125 are sloped, for example, at an angle of 85 to 89.9 degrees relative to the top of the vertical trenches 102, such that the bottom width of the contact holes 125 is less than the top width. The contact hole 125 has a relatively inclined angle, which is beneficial to the filling of the subsequent conductive material and reduces the defects caused by filling gaps.
In the first region 201 of the semiconductor substrate 101, a first set of contact holes of the plurality of contact holes 125 sequentially pass through the interlayer dielectric layer 109 and the gate dielectric 105 to a predetermined depth in the shield wiring 131, and a second set of contact holes sequentially pass through the interlayer dielectric layer 109, the gate dielectric 105, the source region 108 to a predetermined depth in the body region 107. The predetermined depth is, for example, 0.1 to 1 micron.
In the second region 202 of the semiconductor substrate 101, a second set of contact holes of the plurality of contact holes 125 sequentially extend through the interlayer dielectric layer 109 to a predetermined depth in the gate conductor 106.
In the third region 203 of the semiconductor substrate 101, a third set of contact holes of the plurality of contact holes 125 extend through the interlayer dielectric layer 109 to a predetermined depth in the shield wiring 131.
In the ion implantation, the interlayer dielectric layer is used as a hard mask to define the lateral position of the contact region 110, so that the photoresist mask can be omitted. The doping agent adopted by the ion implantation is B11 or BF2, or B11 is firstly implanted and BF2 is then implanted, the implantation energy is 20-100 Kev, the implantation dosage is 1E 14-1E 16, and the thermal annealing temperature is 500-1000 ℃. After ion implantation, a thermal anneal may be performed to activate the dopants.
In step S109, the source electrode 111, the gate electrode 112, and the shielding electrode 113 are formed as shown in fig. 3 i.
This step includes, for example, depositing a metal layer and patterning. The metal layer is composed of, for example, one selected from Ti, tiN, tiSi, W, AL, alSi, alSiCu, cu, ni or an alloy thereof. The metal layer is patterned into a source electrode 111, a gate electrode 112, and a shield electrode 113 by etching. As shown, the source electrode 111, the gate electrode 112, and the shield electrode 113 are isolated from each other.
In the first region 201 of the semiconductor substrate 101, the source electrode 111 reaches the source region 108 via a first set of contact holes of the plurality of contact holes 125.
In the second region 202 of the semiconductor substrate 101, the gate electrode 112 reaches the gate conductor 106 via a second set of contact holes of the plurality of contact holes 125.
In the third region 203 of the semiconductor substrate 101, the shield electrode 113 reaches the shield wiring 131 via a third group of contact holes among the plurality of contact holes 125.
After step S109, the metallization of the power semiconductor device has been achieved. Further, passivation layer protection can be added according to the requirements of products, and the processing of the front structure of the semiconductor device with the power is completed. And finally realizing the device through a series of subsequent processes such as thinning, gold backing, scribing and the like.
It should be noted that although the shield conductors 104 and the shield wirings 131 in the different trenches are isolated from each other and the gate conductors 106 are isolated from each other in the above-described cross-sectional view, in an actual power semiconductor device, the shield conductors 104 and the shield wirings 131 in the different trenches may be connected to each other as viewed in a planar structure, and the gate conductors 106 may also be connected to each other. In one embodiment, the connection is, for example, such that the gate conductor 106 in the different trench 102 is integrally formed from a single conductive layer, and the shield conductor 104 and the shield wiring 131 in the different trench 102 are integrally formed from a single conductive layer. In an alternative embodiment, the connection is, for example, that the shield conductor 104 and the shield wiring 131 in the different trenches 102 are connected to each other with a common shield electrode 113, and that the gate conductors 106 in the different trenches 102 are connected to each other with a common gate electrode 112.
In this embodiment, the shield wiring 131 includes not only a first portion filling the trench 102 but also a second portion extending laterally from the trench 102 at the surface of the semiconductor substrate 101. The second portion serves as a wiring layer. This is mainly considered to be the limited trench width of the power semiconductor device. After the shield conductor 104 in the trench forms the contact holes, the contact holes in the first region 201 and the second region 102 of the semiconductor substrate 101 are dense. In order to improve electrical isolation between the source region 108, the shield conductor 104 and the gate conductor 106, the contact holes using the second portion of the shield wiring 131 as a wiring layer may be distant from each other, thereby reducing process difficulty and providing reliability of the power semiconductor device.
It should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
Embodiments in accordance with the present invention, as described above, are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (16)
1. A method of manufacturing a power semiconductor device, comprising:
Forming a plurality of trenches in a semiconductor substrate of a first doping type, the plurality of trenches including first to third trenches located in first to third regions of the semiconductor substrate, respectively;
Forming an insulating stack on sidewalls and bottoms of the first and second trenches and on sidewalls, bottoms and outer surfaces of the third trench, wherein the insulating stack comprises a first insulating layer and a second insulating layer, the first insulating layer surrounding the second insulating layer;
Forming a shielding conductor at the lower parts of the first groove and the second groove by adopting the same conductor layer, and filling shielding wiring in the third groove;
forming openings in upper portions of the first and second trenches;
forming a gate dielectric and a gate conductor in openings of the first trench and the second trench, the shield conductor, the gate conductor, and a second insulating layer sandwiched therebetween forming a split gate structure;
Forming a body region of a second doping type in a region of the semiconductor substrate adjacent to the trench, the second doping type being opposite to the first doping type;
Forming a source region of the first doping type in the body region; and
Forming a source electrode, a gate electrode and a shield electrode electrically connected to the source region, the gate conductor and the shield wiring, respectively,
Wherein the shield wiring includes a first portion filling the third trench and a second portion extending laterally on the surface of the semiconductor substrate, the second portion serving as a wiring layer spaced apart from the semiconductor substrate by the insulating stack, the shield electrode is led out through the wiring layer, the insulating stack has a thickness thicker than the gate dielectric,
The wiring layer extends laterally such that the contact hole of the gate electrode is distant from the contact hole of the source electrode, and in the step of forming a source region, the wiring layer serves as a hard mask such that a source region is not formed in the semiconductor substrate under the wiring layer,
The shield conductor and the semiconductor substrate are isolated from each other by the insulating stack.
2. The method of manufacturing of claim 1, wherein forming a gate dielectric and a gate conductor in openings of the first trench and the second trench comprises:
removing a portion of the first insulating layer at upper portions of the first trench and the second trench;
forming a gate dielectric on upper sidewalls of the first trench and the second trench; and
The gate conductor is formed to fill the opening,
Wherein the gate conductor and the shield conductor are isolated from each other by the gate dielectric, and the gate conductor and the body region are isolated from each other by the gate dielectric.
3. The manufacturing method according to claim 1, wherein the source electrode is located in the first region, the gate electrode is located in the second region, the shield electrode is located in the third region, and the first region, the second region, and the third region are spaced apart from each other.
4. The manufacturing method according to claim 1, wherein the first insulating layer is composed of silicon oxide, and the second insulating layer is composed of at least one selected from silicon nitride, oxynitride, or polysilicon.
5. The manufacturing method according to claim 1, wherein a thickness of the first insulating layer is in a range of 500 to 50000 angstroms and a thickness of the second insulating layer is in a range of 50 to 5000 angstroms.
6. The method of manufacturing of claim 1, wherein the first doping type is one of N-type and P-type and the second doping type is the other of N-type and P-type.
7. The manufacturing method of claim 1, wherein sidewalls of the plurality of trenches are sloped such that a top width of the plurality of trenches is greater than a bottom width of the plurality of trenches.
8. The manufacturing method according to claim 1, wherein the step of forming the shield conductor, the step of forming the shield wiring, and the step of forming the gate conductor each include at least one deposition.
9. A power semiconductor device, comprising:
a plurality of trenches in a semiconductor substrate, the semiconductor substrate being of a first doping type, the plurality of trenches comprising first to third trenches in first to third regions of the semiconductor substrate, respectively;
An insulating stack on the first trench and the second trench lower sidewalls and bottom, and on the third trench sidewalls, bottom, and outer semiconductor substrate surface, the insulating stack comprising a first insulating layer and a second insulating layer, the first insulating layer surrounding the second insulating layer;
A shield conductor located at a lower portion of the first trench and the second trench, and a shield wiring filling the third trench, the shield conductor and the shield wiring being formed of the same conductor layer;
a gate dielectric and a gate conductor located at upper portions of the first trench and the second trench, the shield conductor, the gate conductor, and a second insulating layer sandwiched therebetween forming a split gate structure;
a body region in the semiconductor substrate, the body region being adjacent to an upper portion of the first trench and being of a second doping type, the second doping type being opposite to the first doping type;
the source region is positioned in the body region and is of the first doping type; and
A source electrode, a gate electrode, and a shield electrode electrically connected to the source region, the gate conductor, and the shield wiring, respectively,
Wherein the shield wiring includes a first portion filling the third trench and a second portion extending laterally on the surface of the semiconductor substrate, the second portion serving as a wiring layer spaced apart from the semiconductor substrate by the insulating stack, the shield electrode is led out through the wiring layer, the insulating stack has a thickness thicker than the gate dielectric,
The wiring layer extends laterally such that the contact hole of the gate electrode is distant from the contact hole of the source electrode, and in the step of forming a source region, the wiring layer serves as a hard mask such that a source region is not formed in the semiconductor substrate under the wiring layer,
The shield conductor and the semiconductor substrate are isolated from each other by the insulating stack.
10. The power semiconductor device of claim 9 wherein said gate dielectric is located on upper sidewalls of said first trench and said second trench,
Wherein the gate conductor and the shield conductor are isolated from each other by the gate dielectric, and the gate conductor and the body region are isolated from each other by the gate dielectric.
11. The power semiconductor device of claim 9 wherein the source electrode is located in the first region, the gate electrode is located in the second region, the shield electrode is located in the third region, and the first region, the second region, and the third region are spaced apart from one another.
12. The power semiconductor device according to claim 9, wherein the first insulating layer is composed of silicon oxide, and the second insulating layer is composed of at least one selected from silicon nitride, oxynitride, or polysilicon.
13. The power semiconductor device of claim 9 wherein the first insulating layer has a thickness in the range of 500 to 50000 angstroms and the second insulating layer has a thickness in the range of 50 to 5000 angstroms.
14. The power semiconductor device of claim 9 wherein the first doping type is one of N-type and P-type and the second doping type is the other of N-type and P-type.
15. The power semiconductor device of claim 9 wherein sidewalls of the plurality of trenches are sloped such that a top width of the plurality of trenches is greater than a bottom width of the plurality of trenches.
16. The power semiconductor device of claim 9, wherein the power semiconductor device is one selected from the group consisting of a CMOS device, a BCD device, a MOSFET transistor, an IGBT, and a schottky diode.
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